JPH05110206A - Method and apparatus for producing light emitting semiconductor element - Google Patents
Method and apparatus for producing light emitting semiconductor elementInfo
- Publication number
- JPH05110206A JPH05110206A JP26734091A JP26734091A JPH05110206A JP H05110206 A JPH05110206 A JP H05110206A JP 26734091 A JP26734091 A JP 26734091A JP 26734091 A JP26734091 A JP 26734091A JP H05110206 A JPH05110206 A JP H05110206A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- film
- semiconductor light
- face
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体発光素子の光出
射端面に保護膜を成膜する半導体発光素子の製造方法及
びその製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device and a manufacturing apparatus thereof for forming a protective film on a light emitting end face of the semiconductor light emitting device.
【０００２】[0002]
【従来の技術】かかる半導体発光素子の製造方法及び製
造装置では、例えば、プラズマＣＶＤ法によって、治具
上に成膜面を側面として載置した半導体発光素子の上方
より成膜材料を供給して保護膜を成膜する方法及びその
装置が知られている。この方法及び装置は、半導体発光
素子の光出射端面に、酸化による端面劣化を防止する保
護膜を効率良く成膜できるものである。2. Description of the Related Art In such a method and an apparatus for manufacturing a semiconductor light emitting device, a film forming material is supplied from above a semiconductor light emitting device mounted on a jig with a film forming surface as a side surface by, for example, a plasma CVD method. A method and apparatus for forming a protective film are known. This method and apparatus can efficiently form a protective film on the light emitting end face of a semiconductor light emitting element to prevent end face deterioration due to oxidation.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら上記構成
では、成膜材料を半導体発光素子に供給する際、装置の
動作の不安定性等に起因して供給途中の成膜材料に空間
的に不均一な密度分布つまり密度むらが発生し、その不
均一な密度分布を持った成膜材料が半導体発光素子に付
着したとき、半導体発光素子に形成される保護膜の膜厚
が面内で不均一になり、それに伴って光出射端面での所
望の光の反射率が得られない場合があり、生産歩留りが
低下するという不都合があった。本発明は、上記実情に
鑑みてなされたものであって、その目的は、保護膜の膜
厚の面内での均一性を向上して、生産歩留りの向上を図
ることにある。However, in the above configuration, when the film forming material is supplied to the semiconductor light emitting element, the film forming material being supplied is not spatially non-uniform due to instability of the operation of the apparatus. When a density distribution, that is, density unevenness occurs, and a film forming material having a non-uniform density distribution adheres to the semiconductor light emitting element, the film thickness of the protective film formed on the semiconductor light emitting element becomes uneven in the plane. As a result, the desired light reflectance at the light emitting end face may not be obtained in some cases, resulting in a disadvantage that the production yield is reduced. The present invention has been made in view of the above circumstances, and an object thereof is to improve the in-plane uniformity of the film thickness of a protective film to improve the production yield.
【０００４】[0004]
【課題を解決するための手段】本発明の半導体発光素子
の製造方法は、半導体発光素子の光出射端面に保護膜を
成膜するものであって、その特徴は、前記半導体発光素
子を、前記光出射端面以外の端面を成膜治具の平坦状の
載置面に当て付けて前記成膜治具に載置し、前記載置面
を含む面に交差する回転軸芯周りで前記成膜治具を回転
させながら、成膜材料を供給する供給手段によって、前
記載置面に対して傾斜した方向から成膜材料を供給する
点にある。又、本発明の半導体発光素子の製造装置は、
半導体発光素子の光出射端面に保護膜を成膜するもので
あって、その特徴構成は、前記半導体発光素子を載置す
る平坦状の載置面を備え、且つ、その載置面を含む面に
交差する回転軸芯周りで回転駆動される成膜治具が設け
られると共に、前記載置面に対して傾斜した方向から成
膜材料を供給する供給手段が設けられている点にある。A method of manufacturing a semiconductor light emitting device according to the present invention comprises forming a protective film on a light emitting end face of a semiconductor light emitting device, which is characterized in that: The end faces other than the light emitting end face are brought into contact with the flat mounting surface of the film-forming jig to be mounted on the film-forming jig, and the film-forming is performed around the rotation axis that intersects with the surface including the mounting surface. The point is that the film forming material is supplied from a direction inclined with respect to the placing surface by the supply means for supplying the film forming material while rotating the jig. The semiconductor light emitting device manufacturing apparatus of the present invention is
A protective film is formed on a light emitting end face of a semiconductor light emitting element, and a characteristic configuration thereof is a surface including a flat mounting surface on which the semiconductor light emitting element is mounted, and a surface including the mounting surface. The point is that a film forming jig that is driven to rotate around a rotation axis that intersects with is provided, and that a supply unit that supplies a film forming material from a direction inclined with respect to the placement surface is provided.
【０００５】[0005]
【作用】上記製造方法の特徴、又、上記製造装置の特徴
構成によれば、成膜材料が半導体発光素子の光出射端面
に対して斜め方向から直接的に供給され、さらに、成膜
材料の供給途中に空間的に不均一な密度分布つまり密度
むらが生じていても、成膜治具の回転と共に成膜治具上
の半導体発光素子の光出射端面が成膜治具の回転軸芯周
りに回転し、半導体発光素子の光出射端面内の何れの部
分も、不均一な分布をなして飛来する成膜材料の中をほ
ぼ同様に通過することになるため、光出射端面上に単位
時間あたりに付着する成膜材料の平均的な量は光出射端
面内でほぼ一定となる。従って、上記成膜材料の空間的
な密度分布の影響をほとんど受けることがなく、形成さ
れる保護膜は光出射端面内で均一な膜厚のものとなる。According to the features of the above manufacturing method and the characteristic configuration of the above manufacturing apparatus, the film forming material is directly supplied to the light emitting end surface of the semiconductor light emitting device from an oblique direction, and Even if there is a spatially non-uniform density distribution during the supply, that is, density unevenness, the light emitting end face of the semiconductor light emitting element on the film forming jig rotates around the rotation axis of the film forming jig as the film forming jig rotates. Since any part of the light emitting end face of the semiconductor light emitting element passes through the film-forming material flying in a non-uniform distribution almost in the same way, the unit time on the light emitting end face The average amount of the film-forming material adhered around is almost constant in the light emitting end face. Therefore, the protective film formed is hardly affected by the spatial density distribution of the film forming material, and has a uniform film thickness within the light emitting end face.
【０００６】[0006]
【発明の効果】本発明は、上記のように保護膜の膜厚の
面内での均一性を向上して、光出射端面での所望の光の
反射率を確実に得られるようにでき、半導体発光素子の
生産歩留りを向上できるものである。As described above, according to the present invention, it is possible to improve the in-plane uniformity of the thickness of the protective film and surely obtain the desired light reflectance at the light emitting end face. The production yield of semiconductor light emitting devices can be improved.
【０００７】[0007]
【実施例】本発明を半導体レーザ素子の光出射端面に保
護膜を形成する方法及びそのための装置に適用した実施
例を図面に基づいて説明する。図１において、供給手段
としての蒸発源１、成膜治具２及びその成膜治具２の回
転軸４は、図示しない真空容器内に配置され、真空蒸着
装置の一部を構成している。成膜治具２は、その成膜治
具２の平坦状の載置面３が蒸発源１と載置面３の中心を
結ぶ直線に対し傾斜姿勢となるように配置され、少なく
とも成膜中、載置面３の法線方向と一致する方向に延び
る回転軸４の軸芯周りに回転する。又、蒸発源１は電子
ビーム蒸着用のるつぼからなり、このるつぼの中に投入
された成膜材料が電子ビームによって加熱蒸発し、成膜
治具２の方向に放射される。半導体発光素子としての半
導体レーザ素子のチップ６は、ウェハー状態で活性層等
の各層を積層後、ウェハーの両面に電極９が形成され、
個々に分割されて、図２に示すように、チップ６の光出
射端面７を側面として、半導体用粘着シート５上に粘着
される。チップ６を粘着した半導体用粘着シート５は、
成膜治具２の載置面３に貼りつけられる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a method of forming a protective film on a light emitting end face of a semiconductor laser device and an apparatus therefor will be described with reference to the drawings. In FIG. 1, an evaporation source 1 as a supply means, a film forming jig 2 and a rotary shaft 4 of the film forming jig 2 are arranged in a vacuum container (not shown) and constitute a part of a vacuum vapor deposition apparatus. . The film forming jig 2 is arranged such that the flat mounting surface 3 of the film forming jig 2 is inclined with respect to the straight line connecting the centers of the evaporation source 1 and the mounting surface 3, and at least during film formation. , Rotates about the axis of the rotary shaft 4 extending in a direction coinciding with the normal direction of the mounting surface 3. Further, the evaporation source 1 is composed of a crucible for electron beam vapor deposition, and the film-forming material charged in the crucible is heated and evaporated by the electron beam and radiated toward the film-forming jig 2. In a chip 6 of a semiconductor laser device as a semiconductor light emitting device, after laminating each layer such as an active layer in a wafer state, electrodes 9 are formed on both surfaces of the wafer,
As shown in FIG. 2, the chips are individually divided and adhered onto the semiconductor adhesive sheet 5 with the light emitting end surface 7 of the chip 6 as a side surface. The adhesive sheet 5 for semiconductor with the chip 6 adhered is
It is attached to the mounting surface 3 of the film forming jig 2.
【０００８】上記構成において、電子ビーム加熱により
蒸発源１から蒸発した、例えばＳｉＯ2 あるいはＳｉ3
Ｎ4 等の成膜材料は、回転軸４の軸芯周りに回転する載
置面３上のチップ６に照射される。このとき、図３中の
矢印１０で示すように、たとえ蒸発した成膜材料に空間
的に不均一な密度分布つまり密度むらがあったとして
も、載置面３が回転していることによってチップ６も同
図中の矢印１１の方向に移動し、チップ６の光出射端面
７の面内の何れの部分も、不均一な分布をなして飛来す
る成膜材料の中をほぼ同様に通過することになるため、
光出射端面７上に単位時間あたりに付着する成膜材料の
平均的な量は光出射端面７の面内でほぼ一定となる。従
って、チップ６の光出射端面７には膜厚の面内均一性が
良好な膜が成膜される。光出射端面７に積層する保護膜
は、通常、半導体レーザの発振波長をλとして、λ／２
に相当する膜厚に成膜されるが、所望の端面反射率に応
じて変更することももちろん可能であり、又、２種以上
の成膜材料を交互に積層して多層の保護膜とすることも
可能である。成膜材料の蒸着後、チップ６に不必要に付
着した成膜材料、特に、電極９に付着した成膜材料をエ
ッチング除去して、図４に示すような、光出射端面７を
覆う保護膜８が形成される。In the above structure, for example, SiO 2 or Si 3 evaporated from the evaporation source 1 by electron beam heating is used.
The film forming material such as N 4 is applied to the chip 6 on the mounting surface 3 which rotates around the axis of the rotating shaft 4. At this time, as shown by the arrow 10 in FIG. 3, even if the evaporated film forming material has a spatially non-uniform density distribution, that is, density unevenness, the mounting surface 3 is rotated and the chip is rotated. 6 also moves in the direction of the arrow 11 in the same figure, and any part of the surface of the light emitting end face 7 of the chip 6 passes through the film-forming material that comes non-uniformly and almost in the same manner. Because,
The average amount of the film forming material deposited on the light emitting end face 7 per unit time is substantially constant within the surface of the light emitting end face 7. Therefore, a film having good in-plane uniformity of film thickness is formed on the light emitting end face 7 of the chip 6. The protective film laminated on the light emitting end face 7 is usually λ / 2, where λ is the oscillation wavelength of the semiconductor laser.
Although it is possible to change the film thickness to correspond to the desired end face reflectance, it is also possible to change the film thickness to a desired value, and two or more kinds of film forming materials are alternately laminated to form a multilayer protective film. It is also possible. After the deposition of the film-forming material, the film-forming material unnecessarily attached to the chip 6, in particular, the film-forming material attached to the electrode 9 is removed by etching to protect the light emitting end face 7 as shown in FIG. 8 is formed.
【０００９】〔別実施例〕上記実施例においては、供給
手段を電子ビーム蒸着用の構成としたが、プラズマＣＶ
Ｄ等でも良い。又、半導体レーザ素子のウェハーを個々
のチップに分割して、保護膜を形成するのではなく、ウ
ェハーを棒状に切り出した、いわゆるバーの状態で保護
膜を形成しても良い。さらに、半導体用粘着シート５を
用いずに、機械的にチップ６あるいはバーを保持するよ
にしても良い。又、載置面３の法線方向と、回転軸４の
軸芯の方向を一致させているが、回転軸４の軸芯方向を
載置面３の法線方向に対して傾斜させるようにしても良
い。そして、上記実施例では半導体発光素子の例として
半導体レーザ素子を挙げて説明しているが、もちろんＬ
ＥＤ等他の半導体発光素子でも良い。[Other Embodiments] In the above-mentioned embodiment, the supply means is configured for electron beam vapor deposition, but plasma CV is used.
D etc. may be used. Further, instead of dividing the wafer of the semiconductor laser device into individual chips and forming the protective film, the protective film may be formed in a so-called bar state in which the wafer is cut into a rod shape. Further, the chip 6 or the bar may be mechanically held without using the semiconductor pressure-sensitive adhesive sheet 5. Further, although the direction of the normal line of the mounting surface 3 and the direction of the axis of the rotary shaft 4 are made to coincide with each other, the axial center direction of the rotary shaft 4 is inclined with respect to the normal direction of the mounting surface 3. May be. In the above embodiment, a semiconductor laser device is taken as an example of the semiconductor light emitting device, but of course L
Other semiconductor light emitting elements such as ED may be used.
【００１０】尚、特許請求の範囲の項に図面との対照を
便利にするために符号を記すが、該記入により本発明は
添付図面の構造に限定されるものではない。It should be noted that although reference numerals are given in the claims for convenience of comparison with the drawings, the present invention is not limited to the structure of the accompanying drawings by the entry.
【図１】本発明を適用した蒸着装置の概略構成図FIG. 1 is a schematic configuration diagram of a vapor deposition device to which the present invention is applied.
【図２】本発明の実施例にかかる、半導体レーザ素子の
半導体用粘着シート上への粘着状態を示す図FIG. 2 is a diagram showing an adhesive state of a semiconductor laser device on an adhesive sheet for a semiconductor according to an embodiment of the present invention.
【図３】本発明の実施例にかかる、半導体発光素子上へ
の成膜材料の供給状態を示す模式図FIG. 3 is a schematic diagram showing a supply state of a film forming material onto a semiconductor light emitting element according to an example of the present invention.
【図４】本発明の実施例にかかる、保護膜を成膜後の半
導体レーザ素子の断面図FIG. 4 is a sectional view of a semiconductor laser device after forming a protective film according to an embodiment of the present invention.
１ 供給手段 ２ 成膜治具 ３ 載置面 ６ 半導体発光素子 ７ 光出射端面 ８ 保護膜 DESCRIPTION OF SYMBOLS 1 Supply means 2 Film-forming jig 3 Mounting surface 6 Semiconductor light-emitting element 7 Light emission end surface 8 Protective film
Claims (2)
（７）に保護膜（８）を成膜する半導体発光素子の製造
方法であって、 前記半導体発光素子（６）を、前記光出射端面（７）以
外の端面を成膜治具（２）の平坦状の載置面（３）に当
て付けて前記成膜治具（２）に載置し、前記載置面
（３）を含む面に交差する回転軸芯周りで前記成膜治具
（２）を回転させながら、成膜材料を供給する供給手段
（１）によって、前記載置面（３）に対して傾斜した方
向から成膜材料を供給する半導体発光素子の製造方法。1. A method for manufacturing a semiconductor light emitting device, comprising forming a protective film (8) on a light emitting end face (7) of the semiconductor light emitting device (6), the semiconductor light emitting device (6) being provided with the light emitting device. The end faces other than the end face (7) are brought into contact with the flat mounting surface (3) of the film-forming jig (2) and placed on the film-forming jig (2). While rotating the film-forming jig (2) around the axis of rotation intersecting the plane containing the film, a supply means (1) for supplying a film-forming material is used to tilt the film-forming jig from a direction inclined with respect to the placing surface (3). A method for manufacturing a semiconductor light emitting device, which supplies a film forming material.
（７）に保護膜（８）を成膜する半導体発光素子の製造
装置であって、 前記半導体発光素子（６）を載置する平坦状の載置面
（３）を備え、且つ、その載置面（３）を含む面に交差
する回転軸芯周りで回転駆動される成膜治具（２）が設
けられると共に、前記載置面（３）に対して傾斜した方
向から成膜材料を供給する供給手段（１）が設けられて
いる半導体発光素子の製造装置。2. A semiconductor light emitting device manufacturing apparatus for forming a protective film (8) on a light emitting end face (7) of a semiconductor light emitting device (6), wherein the semiconductor light emitting device (6) is mounted flat. And a film-forming jig (2) which is provided with a mounting surface (3) and is driven to rotate around a rotation axis that intersects a surface including the mounting surface (3). An apparatus for manufacturing a semiconductor light emitting device, comprising a supply means (1) for supplying a film forming material from a direction inclined with respect to a surface (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26734091A JPH05110206A (en) | 1991-10-16 | 1991-10-16 | Method and apparatus for producing light emitting semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26734091A JPH05110206A (en) | 1991-10-16 | 1991-10-16 | Method and apparatus for producing light emitting semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05110206A true JPH05110206A (en) | 1993-04-30 |
Family
ID=17443464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26734091A Pending JPH05110206A (en) | 1991-10-16 | 1991-10-16 | Method and apparatus for producing light emitting semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05110206A (en) |
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| US6645295B1 (en) | 1999-05-10 | 2003-11-11 | Toyoda Gosei Co., Ltd. | Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
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| JP2006253724A (en) * | 2006-06-07 | 2006-09-21 | Toyoda Gosei Co Ltd | Iii-group nitride compound semiconductor light emitting element |
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| US7619261B2 (en) | 2000-08-07 | 2009-11-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
-
1991
- 1991-10-16 JP JP26734091A patent/JPH05110206A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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