JPH05102540A - Nonlinear superconducting element - Google Patents
Nonlinear superconducting elementInfo
- Publication number
- JPH05102540A JPH05102540A JP3261782A JP26178291A JPH05102540A JP H05102540 A JPH05102540 A JP H05102540A JP 3261782 A JP3261782 A JP 3261782A JP 26178291 A JP26178291 A JP 26178291A JP H05102540 A JPH05102540 A JP H05102540A
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- Prior art keywords
- electrode
- superconducting
- temperature
- superconductor
- channel layer
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は超伝導応用技術に関し、
特に非線形超伝導素子に関する。FIELD OF THE INVENTION The present invention relates to superconducting application technology,
In particular, it relates to a non-linear superconducting device.
【０００２】[0002]
【従来の技術】従来、超伝導素子といえば、弱結合型ジ
ョセフソン素子、トンネル接合型ジョセフソン素子、超
伝導体の超伝導遷移を利用するボロメータ等があった。2. Description of the Related Art Conventionally, superconducting elements include weak coupling type Josephson elements, tunnel junction type Josephson elements, and bolometers utilizing superconducting transitions of superconductors.
【０００３】一方、近年発見された酸化物超伝導体の中
には、その超伝導遷移温度が液体窒素温度（７７．３
Ｋ）を越えるものがあり、超伝導体の応用分野を大きく
広げることとなった。On the other hand, among the oxide superconductors discovered in recent years, the superconducting transition temperature is the liquid nitrogen temperature (77.3).
There are some that exceed K), which has greatly expanded the application field of superconductors.
【０００４】その実用化の一つである超伝導素子につい
て、酸化物超伝導体を二つに割り、再びわずかに接触さ
せたジョセフソン素子、酸化物超伝導体を薄膜にし、小
さなくびれをつけたブリッジ型ジョセフソン素子、酸化
物超伝導体間をＡｕ、Ａｇ等の貴金属で接続したジョセ
フソン素子等、すべて弱結合型のジョセフソン素子とし
て試作されている。Regarding the superconducting device which is one of the practical applications, the oxide superconductor is divided into two, and the Josephson device and the oxide superconductor which are slightly contacted again are made into a thin film, and a small constriction is formed. The bridge type Josephson element, the Josephson element in which oxide superconductors are connected by a noble metal such as Au, Ag, etc. are all prototyped as weakly coupled Josephson elements.
【０００５】[0005]
【発明が解決しようとしている課題】従来試作されてい
る超伝導素子、つまり弱結合型のジョセフソン素子、ト
ンネル接合型ジョセフソン素子等とは異なり、非線形性
が強く、他の新たな応用が可能な、新しい特性の超伝導
素子が望まれていた。[Problems to be Solved by the Invention] Unlike conventional prototype superconducting devices, that is, weak-coupling Josephson devices, tunnel-junction Josephson devices, etc., they have strong nonlinearity and can be used for other new applications. A superconducting device with new characteristics has been desired.
【０００６】一方、酸化物超伝導体を用いた弱結合型の
ジョセフソン素子の電流電圧特性上の非線形領域は、電
圧軸上の０マイクロボルトから数百マイクロボルト程度
の低電圧領域であった。そのため例えば特性インピーダ
ンスの大きな周辺外部回路等との間で、インピーダンス
のミスマッチが大きいという課題があった。On the other hand, the non-linear region of the current-voltage characteristics of the weak coupling type Josephson element using the oxide superconductor is a low voltage region of about 0 microvolt to several hundred microvolts on the voltage axis. .. Therefore, for example, there is a problem that the impedance mismatch is large with a peripheral external circuit having a large characteristic impedance.
【０００７】さらに、弱結合型のジョセフソン素子の電
磁波への応答を利用するジョセフソンミキサーでは、電
磁波の周波数の選択性がほとんどなく、特に通信の分野
ではある特定の周波数にのみ応答できないという課題が
あった。Further, in the Josephson mixer which utilizes the response of the weakly coupled Josephson element to the electromagnetic wave, there is almost no frequency selectivity of the electromagnetic wave, and in particular in the field of communication, it is impossible to respond to a specific frequency. was there.
【０００８】また、超伝導体自体を用い、赤外線領域の
電磁波に対してボロメトリックに応答させる素子では、
超伝導体の超伝導臨界温度付近でしか応答せず、雑音等
に起因する環境温度のゆらぎで、その動作が多大な影響
を受るという課題があった。また、動作温度の範囲が、
超伝導体の超伝導臨界温度付近のごく限られた狭い部分
であるという課題もあった。Further, in a device which uses a superconductor itself and responds bolometrically to electromagnetic waves in the infrared region,
There is a problem that the superconductor responds only near the superconducting critical temperature, and its operation is greatly affected by fluctuations in the ambient temperature caused by noise and the like. Also, the operating temperature range is
There is also a problem that it is a very narrow and narrow part near the superconducting critical temperature of the superconductor.
【０００９】また、超伝導集積回路の分野では、回路の
温度上昇をモニターしたいという要望があるが、従来の
白金センサーなどは、低温で温度分解能が低くなり、超
伝導回路には不向きであった。また、シリコンダイオー
ド、ゲルマニウム抵抗、カーボン抵抗などを用いたセン
サーは、低温での温度分解能は高いが、超伝導体と集積
化することが難しく、また低温での回路とセンサー間の
熱伝導をよくしなければ、正確な温度測定ができない、
などの課題があった。Further, in the field of superconducting integrated circuits, there is a demand for monitoring the temperature rise of the circuit, but conventional platinum sensors and the like are not suitable for superconducting circuits because of low temperature resolution at low temperatures. .. In addition, a sensor using a silicon diode, germanium resistance, carbon resistance, etc. has a high temperature resolution at low temperature, but it is difficult to integrate with a superconductor, and heat conduction between the circuit and the sensor at low temperature is good. If you do not do this, accurate temperature measurement cannot be
There was such a problem.
【００１０】本発明は、特性が安定で、しかも大きな素
子抵抗を有する非線形性の強い超伝導素子を提供するこ
とを目的とする。また、本発明は先の目的に加えて、特
定の周波数に応答する非線形超伝導素子を提供すること
も目的の一つである。さらに超伝導体の臨界温度以下よ
り、低温の広い温度領域で電磁波に応答する超伝導素子
を提供することを目的とする。さらに、超伝導体、ある
いは超伝導回路と、集積化が可能で、その超伝導体、あ
るいは超伝導回路の温度を正確にモニターできる超伝導
素子を提供することを目的とする。An object of the present invention is to provide a superconducting device having stable characteristics and a large non-linearity, which has a large device resistance. In addition to the above-mentioned object, the present invention has another object to provide a nonlinear superconducting element that responds to a specific frequency. Another object of the present invention is to provide a superconducting device that responds to electromagnetic waves in a wide temperature range below the critical temperature of the superconductor. It is another object of the present invention to provide a superconducting element that can be integrated with a superconductor or a superconducting circuit and can accurately monitor the temperature of the superconductor or the superconducting circuit.
【００１１】[0011]
【課題を解決するための手段】本発明は、超伝導体より
なるＡ電極およびＢ電極と、そのＡ電極、およびＢ電極
に接し、かつその抵抗率が温度に対して負の依存性を有
するチャネル層より構成される非線形超伝導素子によっ
て、かかる従来の課題を克服した。According to the present invention, an A electrode and a B electrode made of a superconductor are in contact with the A electrode and the B electrode, and the resistivity thereof has a negative dependence on temperature. The conventional problems have been overcome by the non-linear superconducting device composed of the channel layer.
【００１２】[0012]
【作用】本発明は、超伝導体よりなるＡ電極およびＢ電
極と、そのＡ電極、およびＢ電極に接し、かつその抵抗
率が温度に対して負の依存性を有するチャネル層より超
伝導素子を構成することによって、弱結合型のジョセフ
ソン素子にくらべ、非線形性の強い超伝導素子、異なる
機能を持つ素子を構成した。The present invention provides a superconducting device including an A electrode and a B electrode made of a superconductor, and a channel layer which is in contact with the A electrode and the B electrode and whose resistivity has a negative dependence on temperature. By constructing, a non-linear superconducting device and a device with different functions were constructed compared to the weakly coupled Josephson device.
【００１３】この構成を有することによって、何れか一
方の超伝導電極の超伝導遷移温度以下の温度において、
超伝導素子の電流電圧特性に負性抵抗特性が現出でき
る。この負性抵抗が現出する原因については定かではな
いが、超伝導素子を流れる電流によって、チャネル層温
度が局部的に上昇し、素子抵抗が低下するためと想定さ
れる。この負性抵抗特性のため、従来の弱結合型のジョ
セフソン素子にくらべ、非線形性が強く、またその負性
抵抗特性を用い、反転増幅素子、周波数変換素子、発信
素子を構成できる。With this structure, at a temperature below the superconducting transition temperature of one of the superconducting electrodes,
Negative resistance characteristics can appear in the current-voltage characteristics of the superconducting device. The reason why this negative resistance appears is not clear, but it is assumed that the current flowing through the superconducting element locally raises the channel layer temperature and lowers the element resistance. Due to this negative resistance characteristic, the non-linearity is stronger than that of the conventional weak coupling type Josephson element, and by using the negative resistance characteristic, an inverting amplification element, a frequency conversion element, and a transmission element can be configured.
【００１４】また、本発明に用いたチャネル層のよう
に、抵抗率が温度に対して負の依存性を有する材料は、
例えばホッピング伝導性の材料であり、通常抵抗率が大
きく、このため素子抵抗が大きなものとなる。このこと
により、本発明の非線形超伝導素子は、例えば特性イン
ピーダンスの大きな周辺外部回路等との間でも、インピ
ーダンスのマッチングがとり易くなる。Further, a material whose resistivity has a negative dependence on temperature, such as the channel layer used in the present invention, is
For example, it is a hopping conductive material, and usually has a large resistivity, which results in a large element resistance. As a result, the nonlinear superconducting element of the present invention can easily achieve impedance matching even with, for example, a peripheral external circuit having a large characteristic impedance.
【００１５】[0015]
【実施例】本発明は、超伝導体を一対の電極とし、この
両電極の間に、抵抗率が温度に対して負の依存性を有す
るチャネル層を設けた構造を有する非線形超伝導素子に
関し、両電極の超伝導体のどちらか一方の超伝導遷移温
度以下の温度において、本発明の超伝導素子の電流電圧
特性上に負性抵抗特性を示す領域を有することで、非線
形性の効果を顕著に示すものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention relates to a non-linear superconducting device having a structure in which a superconductor is used as a pair of electrodes, and a channel layer whose resistivity has a negative dependence on temperature is provided between the electrodes. , At a temperature below the superconducting transition temperature of either one of the superconductors of both electrodes, by having a region showing a negative resistance characteristic on the current-voltage characteristics of the superconducting device of the present invention, the effect of nonlinearity This is remarkable.
【００１６】本発明の非線形超伝導素子に供される超伝
導体としては、例えばニオブ、窒化ニオブ、鉛、アルミ
ニウム等の金属超伝導体、例えばＹ−Ｂ−Ｃｕ−Ｏ系、
Ｔｌ−Ｂａ−Ｃｕ−Ｏ系、Ｂｉ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ
系等のいわゆる酸化物超伝導体でもよく、超伝導材料は
特に選ばないが、特に、主として２２１２相のＢｉ系酸
化物超伝導体（Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｃａ1−Ｃｕ2
−Ｏx（ただし0≦y＜0.5、ｘは任意）、もしくは主とし
て２２２３相のＢｉ系酸化物超伝導体（Ｂｉ1- yＰｂy）
2−Ｓｒ2−Ｃａ2−Ｃｕ3−Ｏx（ただし0≦y＜0.5、ｘは
任意）の内何れか１種を用いると、素子作製が容易で、
基板上への積層化、他の酸化物超伝導体素子との集積
化、動作温度範囲の拡張、動作温度の上昇等、様々な利
点があるため好ましい。The superconductor used for the nonlinear superconducting element of the present invention is, for example, a metal superconductor such as niobium, niobium nitride, lead or aluminum, for example, YB-Cu-O system,
T1-Ba-Cu-O system, Bi-Sr-Ca-Cu-O
It may be a so-called oxide superconductors of the system such as, but the superconducting material is not particularly selected, in particular, mainly Bi-based oxide 2212 phase superconductor (Bi 1-y Pb y) 2 -Sr 2 -Ca 1 - Cu 2
-O x (provided that 0 ≦ y <0.5, x is arbitrary), or primarily 2223 Bi-based oxide phase superconductor (Bi 1- y Pb y)
2 -Sr 2 -Ca 2 -Cu 3 -O x ( provided that 0 ≦ y <0.5, x is arbitrary) With any one of the, easy device fabrication,
It is preferable because it has various advantages such as stacking on a substrate, integration with other oxide superconductor elements, expansion of operating temperature range, and increase of operating temperature.
【００１７】またチャネル層の材料には、抵抗率が温度
に対して負の依存性を有する材料であれば、シリコン、
ゲルマニウム、炭素等の半導体材料、酸化物材料、窒化
物材料等でも良いが、特に、主として２２１２相の酸化
物（Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｒａ1−Ｃｕ2−Ｏx（た
だし0≦y＜0.5、ｘは任意、ＲａはＹ、およびランタノ
イド元素のうち少なくとも一つをさす）を用いると、抵
抗率が高くでき、良好な非線形超伝導素子を構成できる
ため好ましい。特にＡ、Ｂ両電極、およびチャネル層と
するＢｉ系酸化物を、基板表面に対してその結晶のｃ軸
が垂直に配向するように成膜することにより、そのａ、
ｂ各結晶方位の格子定数がほぼ一致するために良好な結
晶性を有し、Ａ、Ｂ両電極において、より良好な超伝導
特性をもつ薄膜を実現できるため望ましい。The material of the channel layer is silicon, if the resistivity has a negative dependence on temperature.
Germanium, semiconductor materials such as carbon, oxide material, or a nitride material, etc., but in particular, primarily 2212 phase oxide (Bi 1-y Pb y) 2 -Sr 2 -Ra 1 -Cu 2 -O x ( However, it is preferable to use 0 ≦ y <0.5, x is arbitrary, Ra is Y, and at least one of lanthanoid elements) because the resistivity can be increased and a good nonlinear superconducting element can be formed. In particular, both A and B electrodes, and a Bi-based oxide to be the channel layer are formed so that the c-axis of the crystal is oriented perpendicular to the substrate surface.
b Since the lattice constants of the respective crystal orientations are substantially the same, the crystallinity is good, and it is desirable that both the A and B electrodes can realize a thin film having a better superconducting property.
【００１８】したがって、超伝導電極材料とチャネル層
材料とにこの組み合わせを用いると、素子作製が容易
で、基板上への積層化、他の酸化物超伝導体素子との集
積化、動作温度範囲の拡張、動作温度の上昇、チャネル
層としては、抵抗率が高くでき、良好な非線形超伝導素
子を構成できる等様々な利点がある。Therefore, when this combination is used for the superconducting electrode material and the channel layer material, the device can be easily manufactured, the device can be laminated on the substrate, integrated with other oxide superconductor devices, and the operating temperature range can be improved. , The increase in operating temperature, the channel layer can have a high resistivity, and a favorable nonlinear superconducting element can be formed.
【００１９】また、本発明の非線形超伝導素子は、
（１）非線形超伝導素子の超伝導電極をアンテナ状の構
成とし、しかもチャネル層近傍の、超伝導電極をチャネ
ル層程度の幅にパターニングし、電流電圧特性の変化
で、外部から照射された電磁波の中のある特定の周波数
を計測する素子、または、（２）非線形超伝導素子のチ
ャネル層付近の超伝導電極の一部に、多数の結晶粒界を
含む多結晶薄膜設け、電流電圧特性の変化で、電磁波、
特に数ギガヘルツ以上の高周波の電磁波を計測する素
子、あるいは、（３）非線形超伝導素子の超伝導体の一
部が、他の超伝導体、あるいは超伝導素子、あるいは超
伝導体を構成要素に含む超伝導回路の一部に接触する
か、あるいは一部を共有するように集積化して設置し、
電圧電流特性の変化で、接している超伝導体、超伝導素
子、あるいは超伝導体を構成要素に含む超伝導回路の温
度を計測する素子、の形態で、様々な応用化ができる。Further, the nonlinear superconducting device of the present invention is
(1) The superconducting electrode of the non-linear superconducting element has an antenna-like structure, and the superconducting electrode near the channel layer is patterned to have a width of about the channel layer. Element for measuring a specific frequency in (2) or (2) a part of the superconducting electrode near the channel layer of the nonlinear superconducting element is provided with a polycrystalline thin film containing a large number of grain boundaries, Change, electromagnetic waves,
In particular, an element for measuring high-frequency electromagnetic waves of several gigahertz or more, or (3) a part of a superconductor of a non-linear superconducting element is another superconductor, or a superconducting element, or a superconductor as a constituent element. The integrated superconducting circuit, including a part of the superconducting circuit, or integrated so as to share a part,
Various applications can be made in the form of a superconductor, a superconducting element in contact with the change in voltage-current characteristics, or an element for measuring the temperature of a superconducting circuit including a superconductor as a constituent element.
【００２０】すなわち、（１）の構成により、アンテナ
形状に依存する周波数の電磁波を吸収し、その吸収した
電磁波のエネルギーによって超伝導体の温度が上昇し、
超伝導素子の特性が変化する。このときチャネル層近傍
の超伝導体を細くパターニングすると、チャネル層部分
の熱伝導が一次元的になり、より効果的に電磁波に対し
応答する。また、アンテナの形状により、その超伝導素
子が電磁波の周波数選択性をもち、ある特定の周波数に
のみ応答する。That is, with the configuration of (1), an electromagnetic wave having a frequency depending on the shape of the antenna is absorbed, and the energy of the absorbed electromagnetic wave raises the temperature of the superconductor,
The characteristics of the superconducting device change. At this time, if the superconductor in the vicinity of the channel layer is thinly patterned, the heat conduction in the channel layer portion becomes one-dimensional, and more effectively responds to electromagnetic waves. Further, depending on the shape of the antenna, the superconducting element has frequency selectivity of electromagnetic waves and responds only to a specific frequency.
【００２１】また、（２）の構成にすることにより、数
ギガヘルツから赤外線領域の周波数の電磁波に対し、そ
れら各々のジョセフソン結合の状態が変化し、多数の結
晶粒界を含む多結晶薄膜の熱伝導特性が変化し、それに
よって超伝導素子の特性が変化する。また、この効果
は、超伝導体の遷移温度から、極低温までの広い温度範
囲で起こる。このことにより、従来の超伝導体を用いた
赤外線ボロメータの持っていた、赤外線領域の電磁波に
対してボロメトリックに応答するものの、超伝導体の超
伝導臨界温度付近でしか応答せず、環境温度のゆらぎに
よる雑音が大きいこと、また、動作温度の範囲が、超伝
導体の超伝導臨界温度付近のごく限られた狭い部分であ
るという課題を解決した。Further, by adopting the configuration of (2), the state of the Josephson coupling of each of them is changed with respect to the electromagnetic wave having a frequency of several gigahertz to the infrared region, so that the polycrystalline thin film including a large number of grain boundaries is formed. The heat conduction characteristics change, which changes the characteristics of the superconducting device. Also, this effect occurs in a wide temperature range from the transition temperature of the superconductor to the extremely low temperature. As a result, although the infrared bolometer using a conventional superconductor has a bolometric response to electromagnetic waves in the infrared region, it responds only near the superconducting critical temperature of the superconductor, and the ambient temperature We have solved the problems that the noise due to fluctuations of noise is large, and that the operating temperature range is a very limited and narrow part near the superconducting critical temperature of the superconductor.
【００２２】さらにまた、（３）の構成にすると、他の
超伝導体、超伝導素子、超伝導回路の温度と、本第１の
発明の超伝導素子との温度が同一となり、本第１の発明
の超伝導素子の特性変化によって、接触している超伝導
集積回路等の温度モニターが出来る。なお、超伝導体同
士を直接接触、あるいは一部を共有して集積化している
ため、熱伝導が超伝導体を介しておこなわれ、効率よく
温度計測が出来る。これにより、従来の白金センサーが
持っていた、低温で温度分解能が低くなるという課題、
また、シリコンダイオード、ゲルマニウム抵抗、カーボ
ン抵抗などを用いたセンサーが持っていた、低温での温
度分解能は高いが、超伝導体と集積化することが難し
く、また低温での回路とセンサー間の熱伝導をよくしな
ければ、正確な温度測定ができない、などの課題を解決
した。Furthermore, in the configuration of (3), the temperature of the other superconductor, the superconducting element, and the superconducting circuit becomes the same as the temperature of the superconducting element of the first aspect of the present invention. By changing the characteristics of the superconducting device according to the invention, the temperature of the superconducting integrated circuit or the like in contact can be monitored. In addition, since the superconductors are directly contacted with each other or partially shared to be integrated, heat conduction is performed through the superconductors, and the temperature can be efficiently measured. As a result, the conventional platinum sensor has the problem of low temperature resolution at low temperatures,
In addition, although the temperature resolution at low temperature that the sensor using silicon diode, germanium resistance, carbon resistance, etc. has is high, it is difficult to integrate with a superconductor, and the heat between the circuit and the sensor at low temperature is difficult. We solved the problem that accurate temperature measurement was not possible without good conduction.
【００２３】なお、本発明の非線形超伝導素子の基板材
料としては、ＭｇＯ等通常の基板材料が供される。As the substrate material of the nonlinear superconducting element of the present invention, a usual substrate material such as MgO is used.
【００２４】また、本発明の非線形超伝導素子の形成方
法としては、スパッタ法、抵抗加熱蒸着法等通常の薄膜
形成方法が供される。As a method for forming the nonlinear superconducting element of the present invention, a usual thin film forming method such as a sputtering method or a resistance heating vapor deposition method is used.
【００２５】以下に具体的実施例を挙げて、本発明をよ
り詳細に説明する。 （実施例１）図１は本発明の非線形超伝導素子の一実施
例を作製するプロセス図である。まず、図１（ａ）に示
したように、（１００）ＭｇＯ基板を基体３に用い、ｒ
ｆマグネトロンスパッタリング法によって、主として２
２１２相の酸化物超伝導体を含むＢｉ系酸化物超伝導体
Ｂｉ2−Ｓｒ2−Ｃａ1−Ｃｕ2−Ｏx（ただしｘは任意）
が堆積するように調整した酸化物粉末のターゲットを用
い、厚さ３００ｎｍのＡ電極１を堆積させた。ひき続き
同一真空中において、主として２２１２相のＢｉ系酸化
物Ｂｉ2−Ｓｒ2−Ｎｄ1−Ｃｕ2−Ｏx（ただしｘは任
意）が堆積するように調整した酸化物粉末のターゲット
よりチャネル層２を厚さ１１ｎｍ堆積させた。The present invention will be described in more detail with reference to specific examples. (Embodiment 1) FIG. 1 is a process diagram for producing an embodiment of a nonlinear superconducting device of the present invention. First, as shown in FIG. 1A, a (100) MgO substrate was used as the substrate 3, and r
f Mainly 2 by magnetron sputtering method
Bi-based oxide includes an oxide superconductor of 212 phase superconductor Bi 2 -Sr 2 -Ca 1 -Cu 2 -O x ( where x is arbitrary)
The A electrode 1 having a thickness of 300 nm was deposited using a target of oxide powder adjusted so as to deposit. Then, in the same vacuum, a channel layer is formed from an oxide powder target adjusted so that 2212 phase Bi-based oxide Bi 2 —Sr 2 —Nd 1 —Cu 2 —O x (where x is arbitrary) is mainly deposited. 2 was deposited to a thickness of 11 nm.
【００２６】さらに図１（ｂ）に示したように、Ｂ電極
４となる２２１２相の酸化物超伝導体を含むＢｉ系酸化
物超伝導体Ｂｉ2−Ｓｒ2−Ｃａ1−Ｃｕ2−Ｏx（ただ
し、ｘは任意）が堆積するように調整した酸化物粉末の
ターゲットを用いて、Ｂ電極４を２００ナノメータ堆積
させ、最後に表面保護層５としてのＰｔを６０ｎｍ堆積
させた。Further, as shown in FIG. 1B, a Bi-based oxide superconductor Bi 2 —Sr 2 —Ca 1 —Cu 2 —O containing a 2212-phase oxide superconductor to be the B electrode 4 is formed. Using a target of oxide powder adjusted to deposit x (where x is arbitrary), the B electrode 4 was deposited to 200 nm, and finally Pt as the surface protection layer 5 was deposited to 60 nm.
【００２７】ただし基板温度は表面保護層５のＰｔの堆
積を除き、いずれの場合も６５０℃である。表面保護層
５は、室温で堆積した。However, the substrate temperature is 650 ° C. in all cases except the deposition of Pt on the surface protective layer 5. The surface protection layer 5 was deposited at room temperature.
【００２８】その後、ネガレジスト６を用いたフォトリ
ソグラフィーおよびイオンミリングによりにより、図１
（ｃ）に示したように、チャネル層２、Ｂ電極４、およ
び表面保護層５をトンネル接合形状にパターニングし
た。After that, by photolithography using the negative resist 6 and ion milling, as shown in FIG.
As shown in (c), the channel layer 2, the B electrode 4, and the surface protection layer 5 were patterned into a tunnel junction shape.
【００２９】その後、図１（ｄ）に示したように、ネガ
レジスト６を除去せずに、電極間分離層７として２５０
ナノメータのＣａＦ2を真空蒸着により堆積後、図１
（ｅ）に示したようにトリクロロエタンによる超音波洗
浄、およびＯ2ガスプラズマ処理（１トール、１３．５
６ＭＨｚ、４００Ｗ）によるリフトオフ法で表面保護層
５を露出させた。Thereafter, as shown in FIG. 1D, the negative resist 6 is not removed, and the interelectrode separation layer 7 is formed as 250.
After depositing nanometer CaF 2 by vacuum evaporation,
As shown in (e), ultrasonic cleaning with trichloroethane and O 2 gas plasma treatment (1 Torr, 13.5
The surface protection layer 5 was exposed by a lift-off method using 6 MHz and 400 W).
【００３０】最後に、全面にコンタクト電極８用に、Ｐ
ｔ１５０ｎｍを堆積させ、ネガレジストを用いたフォト
リソグラフィーおよびイオンミリングによりによりＢ電
極の一部に接触させたコンタクト電極８を形成し、図１
（ｆ）に示したような非線形超伝導素子を完成させた。Finally, P is formed on the entire surface for the contact electrode 8.
A contact electrode 8 was formed by depositing t150 nm and contacting a part of the B electrode by photolithography using a negative resist and ion milling.
The nonlinear superconducting device as shown in (f) was completed.
【００３１】図２は本超伝導素子作製に用いたチャネル
層の抵抗率の温度依存性である。低温において急激に増
化し、温度に対して負の依存性を示している。ここでＢ
ＳＮＣＯ（２２１２）、ＢＳＥＣＯ（２２１２）は、そ
れぞれ、Ｂｉ2−Ｓｒ2−Ｎｄ 1−Ｃｕ2−Ｏx（ただし、
ｘは任意）、Ｂｉ2−Ｓｒ2−Ｅｒ1−Ｃｕ2−Ｏx（ただ
し、ｘは任意）を表わし、ＢＳＮＣＯ（２２０１）、Ｂ
ＳＥＣＯ（２２０１）は、それぞれ、Ｂｉ系２２０１構
造の、Ｂｉ−Ｓｒ−Ｎｄ−Ｃｕ−Ｏ、Ｂｉ−Ｓｒ−Ｅｒ
−Ｃｕ−Ｏを表わす。FIG. 2 shows a channel used for manufacturing the present superconducting device.
It is the temperature dependence of the resistivity of the layer. Rapid increase at low temperature
And shows a negative dependence on temperature. Where B
SNCO (2212) and BSECO (2212) are
Bi, respectively2-Sr2-Nd 1-Cu2-Ox(However,
x is arbitrary), Bi2-Sr2-Er1-Cu2-Ox(However
, X is arbitrary), and BSNCO (2201), B
SECO (2201) is a Bi-based 2201 structure.
Bi-Sr-Nd-Cu-O, Bi-Sr-Er
Represents -Cu-O.
【００３２】図３に、この超伝導素子の温度を変えて測
定した電流電圧特性の一例を示す。特性上に強い非線形
性が確認され、低温にするにつれ負性抵抗領域が見ら
れ、非線形性が大きくなっていることを示している。ま
た、温度変化に対して、特に負性抵抗が現われる付近で
の特性が大きく変化した。素子抵抗は、従来作製された
同様の形状のジョセフソン素子よりも大きなものであ
り、外部回路とのインピーダンスマッチングに有利であ
った。FIG. 3 shows an example of current-voltage characteristics measured by changing the temperature of this superconducting element. A strong non-linearity was confirmed in the characteristics, and a negative resistance region was observed as the temperature was lowered, indicating that the non-linearity increased. In addition, the characteristics changed greatly with temperature changes, especially in the vicinity of the negative resistance. The element resistance is larger than that of a conventionally manufactured Josephson element having the same shape, which is advantageous for impedance matching with an external circuit.
【００３３】（実施例２）図４に本発明の非線形超伝導
素子の別の実施例の概略図を示す。また図５（ａ）に、
中心部分を拡大した上面図、また図５（ｂ）にその断面
図を示す。本実施例では実施例１の非線形超伝導素子の
Ａ電極をボウタイアンテナ９形状とし、その中央部を幅
１０μｍ、長さ１００μｍに加工し、その中央部分に１
０μｍ角の非線形超伝導素子を形成した。(Embodiment 2) FIG. 4 shows a schematic view of another embodiment of the nonlinear superconducting device of the present invention. In addition, in FIG.
An enlarged top view of the central portion and a sectional view thereof are shown in FIG. In this embodiment, the A electrode of the nonlinear superconducting element of the first embodiment has a bow-tie antenna 9 shape, and its central portion is processed to have a width of 10 μm and a length of 100 μm.
A 0 μm square non-linear superconducting element was formed.
【００３４】まず、実施例１と同様に、（１００）Ｍｇ
Ｏ基板３上にＡ電極１、チャネル層２、Ｂ電極４、表面
保護層５をｒｆマグネトロンスパッタリングで成膜した
多層膜を用い、ネガレジストを用いたフォトリソグラフ
ィーと、イオンミリングによって、Ａ電極１も含め中心
部分が幅１０μｍ、長さ１００μｍにくびれた、ボウタ
イアンテナ９形状を作製した。その後、実施例１と同様
の手法で、ボウタイアンテナ９中心部に１０μｍ角の非
線形超伝導素子を作製し、素子を完成させた。なお、Ａ
電極１およびＢ電極４の材料には（Ｂｉ0.6Ｐｂ0.4）2
−Ｓｒ2−Ｃａ2−Ｃｕ3−Ｏx（ただし、ｘは任意）を用
い、チャネル層２、表面保護層５等の材料は、実施例１
と同一である。First, as in Example 1, (100) Mg
The A electrode 1, the channel layer 2, the B electrode 4, and the surface protective layer 5 are formed on the O substrate 3 by rf magnetron sputtering, and the A electrode 1 is formed by photolithography using a negative resist and ion milling. A bow tie antenna 9 having a width of 10 μm and a length of 100 μm at its central portion was manufactured. Then, in the same manner as in Example 1, a 10 μm square nonlinear superconducting element was produced in the center of the bowtie antenna 9 to complete the element. In addition, A
The material of the electrodes 1 and B electrode 4 is (Bi 0.6 Pb 0.4 ) 2
-Sr 2 -Ca 2 -Cu 3 -O x ( here, x is arbitrary) using a channel layer 2, the material such as a surface protective layer 5, Example 1
Is the same as
【００３５】このようにして作製した非線形超伝導素子
に様々な周波数の電磁波を照射したところ、アンテナ形
状、サイズに依存する特定の周波数の電磁波を吸収し、
超伝導素子の電流電圧特性が変化した。また、この変化
は、その吸収した電磁波のエネルギーによって超伝導体
の温度が上昇し、超伝導素子の特性が変化することによ
って説明される。このことを利用して、各種のアンテナ
形状、サイズで、ある特定の周波数の電磁波に対して、
選択的に本実施例の非線形超伝導素子が応答した。さら
に、この応答は、非線形超伝導素子の負性抵抗部分で顕
著であった。When the electromagnetic wave of various frequencies was irradiated to the non-linear superconducting element thus manufactured, the electromagnetic wave of a specific frequency depending on the antenna shape and size was absorbed,
The current-voltage characteristics of the superconducting device changed. Further, this change is explained by the temperature of the superconductor rising due to the energy of the absorbed electromagnetic wave and the change of the characteristics of the superconducting element. Utilizing this, with various antenna shapes and sizes, for electromagnetic waves of a certain specific frequency,
The non-linear superconducting device of this example responded selectively. Furthermore, this response was remarkable in the negative resistance part of the nonlinear superconducting device.
【００３６】（実施例３）図６に本発明の非線形超伝導
素子の別の実施例の概略図を示す。また、図７（ａ）
に、本実施例の非線形超伝導素子部分を拡大した上面
図、図７（ｂ）にその断面図を示す。本実施例では実施
例１と同様にして、（１００）ＭｇＯ基板３上にＡ電極
１、チャネル層２、Ｂ電極４、表面保護層５をｒｆマグ
ネトロンスパッタリングで成膜した多層膜を用い、ネガ
レジストを用いたフォトリソグラフィーと、イオンミリ
ングによって、表面保護層５、Ｂ電極４、チャネル層２
を非線形超伝導素子となる接合形状に形成した。ただ
し、Ａ電極１およびＢ電極４の材料は、主として２２２
３相の酸化物超伝導体の（Ｂｉ0.9Ｐｂ0.1）2−Ｓｒ2−
Ｃａ 2−Ｃｕ3−Ｏx（ただし、ｘは任意）である。(Embodiment 3) FIG. 6 shows the nonlinear superconductivity of the present invention.
Figure 3 shows a schematic view of another embodiment of the device. In addition, FIG.
On the upper surface of the enlarged non-linear superconducting element portion of this embodiment.
The cross-sectional view is shown in FIG. Implemented in this example
In the same manner as in Example 1, the A electrode was formed on the (100) MgO substrate 3.
1, channel layer 2, B electrode 4, surface protection layer 5 with rf mag
Using a multilayer film formed by netron sputtering,
Photolithography using resist and ion mill
Surface protection layer 5, B electrode 4, channel layer 2 by
Was formed into a junction shape to be a nonlinear superconducting element. However
However, the materials of the A electrode 1 and the B electrode 4 are mainly 222
Three-phase oxide superconductor (Bi0.9Pb0.1)2-Sr2−
Ca 2-Cu3-Ox(However, x is arbitrary).
【００３７】次にその接合形状の近傍のＡ電極１の部分
に、酸素雰囲気中で赤外線レーザ光線を照射し、結晶化
温度以上に加熱し、多くの結晶粒界１０を形成した。そ
の後、電極間分離層７、コンタクト電極８を形成し、超
伝導素子を構成した。ここで形成したＡ電極１上の結晶
粒界１０は、各々相互にジョセフソン結合を形成してい
た。Next, the portion of the A electrode 1 near the bonding shape was irradiated with an infrared laser beam in an oxygen atmosphere and heated to a temperature above the crystallization temperature to form many crystal grain boundaries 10. After that, the inter-electrode separation layer 7 and the contact electrode 8 were formed to form a superconducting element. The crystal grain boundaries 10 on the A electrode 1 formed here formed Josephson bonds with each other.
【００３８】このようにして作製した超伝導素子を冷却
し、Ａ電極１に赤外線を照射したところ、超伝導素子の
電流電圧特性が変化した。また、数十ギガヘルツの電磁
波に対しても応答した。この応答は、超伝導素子を構成
する超伝導体の超伝導遷移温度より低温全域で観測し
た。また、従来の超伝導体を用いたボロメータでは、超
伝導体の超伝導遷移温度付近でしか応答しなかったが、
本発明の非線形超伝導素子の特性変化は、超伝導遷移温
度より十分低温の方が大きく、また雑音も少なく安定で
あった。さらに、この応答は非線形超伝導素子の負性抵
抗部分で顕著であった。When the superconducting element thus manufactured was cooled and the A electrode 1 was irradiated with infrared rays, the current-voltage characteristics of the superconducting element changed. It also responded to electromagnetic waves of several tens of GHz. This response was observed at a temperature lower than the superconducting transition temperature of the superconductor constituting the superconducting device. Moreover, the bolometer using the conventional superconductor responded only near the superconducting transition temperature of the superconductor.
The change in characteristics of the nonlinear superconducting device of the present invention was stable at a temperature sufficiently lower than the superconducting transition temperature, and was stable with less noise. Furthermore, this response was remarkable in the negative resistance part of the nonlinear superconducting device.
【００３９】（実施例４）図８に本発明の非線形超伝導
素子の他の実施例の概略図を示す。また、図９（ａ）
に、本実施例の非線形超伝導素子部分を拡大した上面
図、図９（ｂ）にその断面図を示す。実施例１と同様に
して、（１００）ＭｇＯ基板３上にＡ電極１、チャネル
層２、Ｂ電極４、表面保護層５をｒｆマグネトロンスパ
ッタリングで成膜した多層膜を用い、ネガレジストを用
いたフォトリソグラフィーと、イオンミリングによっ
て、表面保護層５、Ｂ電極４、チャネル層２を非線形超
伝導素子となる接合形状を複数個形成した。ただし、Ａ
電極１およびＢ電極４の材料は、主として２２１２相の
酸化物超伝導体のＢｉ2−Ｓｒ2−Ｃａ1−Ｃｕ2−Ｏ
x（ただし、ｘは任意）である。(Embodiment 4) FIG. 8 shows a schematic view of another embodiment of the nonlinear superconducting element of the present invention. In addition, FIG.
9 is an enlarged top view of the non-linear superconducting element portion of this embodiment, and FIG. 9 (b) is its sectional view. In the same manner as in Example 1, a multi-layer film in which the A electrode 1, the channel layer 2, the B electrode 4, and the surface protective layer 5 were formed on the (100) MgO substrate 3 by rf magnetron sputtering, and a negative resist was used. By photolithography and ion milling, the surface protection layer 5, the B electrode 4, and the channel layer 2 were formed into a plurality of junction shapes each of which serves as a nonlinear superconducting element. However, A
The materials of the electrode 1 and the B electrode 4 are mainly Bi 2 —Sr 2 —Ca 1 —Cu 2 —O of 2212 phase oxide superconductor.
x (however, x is arbitrary).
【００４０】形成した多数の接合は、実施例１で述べた
非線形超伝導素子であるが、その多数の接合の内、ひと
つは温度計測用の超伝導素子として、また他の接合はそ
れぞれ並列に抵抗で接続し、磁場応答を調べるための超
伝導回路１１として、電極間分離層７、コンタクト電極
８を形成し、非線形超伝導素子、および超伝導回路１１
を構成した。ここで形成した非線形超伝導素子と、超伝
導回路はＡ電極１を共通としており、超伝導回路１１の
動作による温度変化によって、非線形超伝導素子の特性
が変化した。また、超伝導回路１１で発生した熱は、主
として超伝導体、ここではＡ電極１を伝導するため、Ａ
電極１の回路部分と、非線形超伝導素子のＡ電極１との
温度差はなく、良好な温度モニタができた。The large number of junctions formed are the non-linear superconducting elements described in the first embodiment. Among the numerous junctions, one is a superconducting element for temperature measurement, and the other junctions are in parallel. A non-linear superconducting element and a superconducting circuit 11 are formed by forming an inter-electrode separation layer 7 and a contact electrode 8 as a superconducting circuit 11 connected by a resistor and for examining a magnetic field response.
Configured. The non-linear superconducting element formed here and the superconducting circuit share the A electrode 1, and the characteristics of the non-linear superconducting element changed due to the temperature change caused by the operation of the superconducting circuit 11. Further, the heat generated in the superconducting circuit 11 is mainly conducted through the superconductor, in this case, the A electrode 1, so that A
There was no temperature difference between the circuit portion of the electrode 1 and the A electrode 1 of the nonlinear superconducting element, and good temperature monitoring was possible.
【００４１】なお、各発明の実施例では、チャネル層の
材料として（Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｎｄ1−Ｃｕ2−
Ｏx（ただし0≦y＜0.5、ｘは任意）を用い説明したが、
主として２２１２相の下記酸化物（Ｂｉ1-yＰｂy）2−
Ｓｒ2−Ｒａ1−Ｃｕ2−Ｏx（ただし0≦y＜0.5、ｘは任
意、ＲａはＹ、およびランタノイド元素のうち少なくと
も一つをさす）のうち一種を用いても、同様に抵抗率が
温度に対して負の依存性を有する特性をもち、良好な負
性抵抗特性を示す非線形超伝導素子が作製できた。ま
た、このことは、抵抗率が温度に対して負の依存性を有
する材料であれば、何でも良いことは言うまでもない。[0041] In the embodiment of the invention, as the material of the channel layer (Bi 1-y Pb y) 2 -Sr 2 -Nd 1 -Cu 2 -
The explanation was made using O x (where 0 ≦ y <0.5 and x is arbitrary).
Primarily 2212 phase following oxides of (Bi 1-y Pb y) 2 -
Even if one of Sr 2 —Ra 1 —Cu 2 —O x (where 0 ≦ y <0.5, x is arbitrary, Ra is Y, and at least one of the lanthanoid elements) is used, the resistivity is the same. It was possible to fabricate a nonlinear superconducting device which has a negative dependence on temperature and a good negative resistance characteristic. Needless to say, this may be any material as long as the resistivity has a negative dependence on temperature.
【００４２】さらに実施例としては酸化物超伝導体を用
いたが、金属超伝導体でも同様な非線形超伝導素子が形
成できることは言うまでもない。Further, although an oxide superconductor was used as an example, it goes without saying that a similar non-linear superconducting element can be formed also with a metal superconductor.
【００４３】[0043]
【発明の効果】以上説明したように、超伝導体よりなる
Ａ電極およびＢ電極と、そのＡ電極、およびＢ電極に接
し、かつその抵抗率が温度に対して負の依存性を有する
チャネル層より超伝導素子を構成することによって、ど
ちらか一方の超伝導体の超伝導遷移温度以下の温度にお
いて、電流電圧特性上に負性抵抗特性が現れ、この非線
形性を用いると、反転増幅素子、周波数変換素子、発信
素子を構成できる効果がある。As described above, the A electrode and the B electrode made of a superconductor, and the channel layer which is in contact with the A electrode and the B electrode and whose resistivity has a negative dependence on temperature. By configuring a more superconducting element, at a temperature below the superconducting transition temperature of either one of the superconductors, a negative resistance characteristic appears on the current-voltage characteristic, and using this nonlinearity, an inverting amplification element, There is an effect that a frequency conversion element and a transmission element can be configured.
【００４４】また、本発明に用いたチャネル層のよう
に、抵抗率が温度に対して負の依存性を有する材料は、
抵抗率が大きく、素子抵抗が大きなものとなり、特性イ
ンピーダンスの大きな周辺外部回路、あるいは室温の回
路との間で、インピーダンスのマッチングがとり易くな
る効果がある。Further, a material whose resistivity has a negative dependence on temperature, such as the channel layer used in the present invention, is
Since the resistivity is large and the element resistance is large, there is an effect that impedance matching can be easily achieved with a peripheral external circuit having a large characteristic impedance or a circuit at room temperature.
【００４５】さらに、本発明の非線形超伝導素子を超伝
導電極をアンテナ状の構成とし、またチャネル層近傍の
超伝導体をチャネル層程度の幅にパターニングすると、
アンテナ形状に依存し、選択的周波数の電磁波に応答す
る超伝導素子を構成できる効果がある。Further, in the nonlinear superconducting element of the present invention, the superconducting electrode is formed in the shape of an antenna, and the superconductor near the channel layer is patterned to have a width of about the channel layer.
There is an effect that a superconducting element that responds to electromagnetic waves of a selective frequency can be configured depending on the shape of the antenna.
【００４６】また、本発明の超伝導素子のチャネル層の
近傍の超伝導体を、ジョセフソン結合をした多数の結晶
粒界を含む多結晶薄膜とすることによって、数ギガヘル
ツから赤外線領域の周波数の電磁波に応答する超伝導素
子を形成できる効果がある。この動作は、低温で顕著で
あり、動作温度のマージンを大きくできる効果がある。Further, the superconductor in the vicinity of the channel layer of the superconducting element of the present invention is a polycrystalline thin film including a large number of Josephson-coupled grain boundaries, so that the frequency in the range from several gigahertz to the infrared region can be obtained. This has the effect of forming a superconducting element that responds to electromagnetic waves. This operation is remarkable at low temperatures, and has an effect of increasing the margin of operating temperature.
【００４７】さらにまた、本発明の超伝導素子を用い、
その超伝導素子の一部を、他の超伝導体、超伝導素子、
あるいは超伝導回路と共有させるか、接触させると、本
発明の超伝導素子の特性変化によって、他の超伝導体、
超伝導素子、超伝導回路の温度を正確に計測する超伝導
素子を形成できる効果がある。Furthermore, using the superconducting device of the present invention,
Part of the superconducting element, other superconductor, superconducting element,
Alternatively, when shared with or brought into contact with a superconducting circuit, other superconductors may be changed by changing the characteristics of the superconducting element of the present invention.
There is an effect that a superconducting element that accurately measures the temperature of the superconducting element and the superconducting circuit can be formed.
【００４８】現在電気通信の分野では、自動車電話の普
及、デジタル画像情報の伝送、情報ネットワークの普及
などにより、大量の信号を伝達する手段として、より高
周波を用いた通信手段が望まれていた。本発明による超
伝導素子は、従来使用できなかった高周波の電波の信号
処理、検知に利用できるため、これら電気通信分野の電
波周波数の利用範囲を拡大できる。さらに高感度である
ため、電波障害の問題も低減出来る可能性がある。ま
た、他の超伝導集積回路の温度を簡単に、しかも集積さ
れた一つの素子で計測でき、超伝導集積回路の誤動作防
止に利用できる。これらの点で本発明の実用的効果は、
電気情報通信分野で大である。In the field of telecommunications at present, a communication means using a higher frequency has been desired as a means for transmitting a large amount of signals due to the spread of automobile telephones, the transmission of digital image information, the spread of information networks and the like. Since the superconducting element according to the present invention can be used for signal processing and detection of high frequency radio waves that cannot be used conventionally, the range of use of radio frequency in these telecommunication fields can be expanded. Furthermore, since the sensitivity is high, there is a possibility that the problem of radio interference can be reduced. In addition, the temperature of another superconducting integrated circuit can be easily measured with one integrated element, which can be used for preventing malfunction of the superconducting integrated circuit. In these respects, the practical effect of the present invention is
It is large in the field of electrical information communication.
【図１】本発明の非線形超伝導素子の一実施例の作製工
程図であり （ａ）はＡ電極上にチャネル層を形成する工程 （ｂ）はＢ電極上に表面保護層を形成する工程 （ｃ）はトンネル接合形状にパターニングした工程 （ｄ）は電極間分離層を形成する工程 （ｅ）はリフトオフ工程 （ｆ）はコンタクト電極形成工程FIG. 1 is a manufacturing process diagram of an embodiment of a nonlinear superconducting device of the present invention (a) is a step of forming a channel layer on an A electrode, and (b) is a step of forming a surface protective layer on a B electrode. (C) is a step of patterning into a tunnel junction shape (d) is a step of forming an electrode separation layer (e) is a lift-off step (f) is a contact electrode forming step
【図２】本発明の非線形超伝導素子の一実施例のチャネ
ル層の材料の抵抗率の温度依存性FIG. 2 is a temperature dependence of the resistivity of the material of the channel layer of one embodiment of the nonlinear superconducting device of the present invention.
【図３】本発明の非線形超伝導素子の一実施例の電流電
圧特性図FIG. 3 is a current-voltage characteristic diagram of an embodiment of the nonlinear superconducting device of the present invention.
【図４】本発明の非線形超伝導素子の別の実施例の概略
図FIG. 4 is a schematic view of another embodiment of the nonlinear superconducting device of the present invention.
【図５】（ａ）は本発明の非線形超伝導素子の別の実施
例の要部拡大上面図 （ｂ）は本発明の非線形超伝導素子の別の実施例の要部
拡大断面概略図FIG. 5 (a) is an enlarged top view of an essential part of another embodiment of the nonlinear superconducting element of the present invention. FIG. 5 (b) is an enlarged sectional schematic view of an essential part of another embodiment of the nonlinear superconducting element of the present invention.
【図６】本発明の非線形超伝導素子の他の実施例の概略
図FIG. 6 is a schematic view of another embodiment of the nonlinear superconducting device of the present invention.
【図７】（ａ）は本発明の非線形超伝導素子の他の実施
例の要部拡大上面図 （ｂ）は本発明の非線形超伝導素子の他の実施例の要部
拡大断面概略図FIG. 7 (a) is an enlarged top view of an essential part of another embodiment of the nonlinear superconducting element of the present invention. (B) is an enlarged sectional schematic view of an essential part of another embodiment of the nonlinear superconducting element of the present invention.
【図８】本発明の非線形超伝導素子の別の実施例の概略
図FIG. 8 is a schematic view of another embodiment of the nonlinear superconducting device of the present invention.
【図９】（ａ）は本発明の非線形超伝導素子の別の実施
例の要部拡大上面図 （ｂ）は本発明の非線形超伝導素子の別の実施例の要部
拡大断面概略図FIG. 9 (a) is an enlarged top view of an essential part of another embodiment of the nonlinear superconducting element of the present invention. FIG. 9 (b) is an enlarged sectional schematic view of an essential part of another embodiment of the nonlinear superconducting element of the present invention.
１ Ａ電極 ２ チャネル層 ３ 基体 ４ Ｂ電極 ５ 表面保護層 ６ ネガレジスト ７ 電極間分離層 ８ コンタクト電極 ９ ボウタイアンテナ １０ 結晶粒界 １１ 超伝導回路 DESCRIPTION OF SYMBOLS 1 A electrode 2 Channel layer 3 Substrate 4 B electrode 5 Surface protection layer 6 Negative resist 7 Electrode separation layer 8 Contact electrode 9 Bowtie antenna 10 Crystal grain boundary 11 Superconducting circuit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 市川 洋 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Ichikawa 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (5)
前記Ａ電極および前記Ｂ電極に接し、かつ抵抗率が温度
に対して負の依存性を有するチャネル層より構成したこ
とを特徴とする非線形超伝導素子。1. An A electrode and a B electrode made of a superconductor,
A non-linear superconducting device comprising a channel layer which is in contact with the A electrode and the B electrode and whose resistivity has a negative dependence on temperature.
一方をアンテナ状の構成とし、かつチャネル層近傍の前
記Ａ電極または前記Ｂ電極の少なくとも何れかを前記チ
ャネル層程度の幅にしたことを特徴とする、請求項１記
載の非線形超伝導素子。2. At least one of the A electrode and the B electrode has an antenna-like structure, and at least one of the A electrode and the B electrode near the channel layer has a width of about the channel layer. The nonlinear superconducting element according to claim 1.
はＢ電極のどちらか一方の一部に、多数の結晶粒界を含
む多結晶薄膜を形成したことを特徴とする、請求項１記
載の非線形超伝導素子。3. A nonlinear thin film according to claim 1, wherein a polycrystalline thin film containing a large number of crystal grain boundaries is formed on at least a part of either the A electrode or the B electrode near the channel layer. Superconducting element.
他の超伝導体の一部、超伝導素子の一部、あるいは超伝
導体を構成要素に含む超伝導回路の一部に接触または共
有したことを特徴とする、請求項１記載の非線形超伝導
素子。4. At least a part of the A electrode or the B electrode,
2. The non-linear superconducting device according to claim 1, which is in contact with or shared with a part of another superconductor, a part of a superconducting element, or a part of a superconducting circuit including a superconductor as a constituent element. element.
２相の下記Ｂｉ系酸化物超伝導体 （Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｃａ1−Ｃｕ2−Ｏx （ただし0≦y＜0.5、ｘは任意） もしくは、主として２２２３相の下記酸化物超伝導体 （Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｃａ2−Ｃｕ3−Ｏx （ただし0≦y＜0.5、ｘは任意） の内何れか１種であり、チャネル層の材料が、主として
２２１２相の下記酸化物 （Ｂｉ1-yＰｂy）2−Ｓｒ2−Ｒａ1−Ｃｕ2−Ｏx、 （ただし0≦y＜0.5、ｘは任意、ＲａはＹ、およびラン
タノイド元素のうち少なくとも一つをさす）を用いるこ
とを特徴とする、請求項１〜４何れかに記載の非線形超
伝導素子。5. The material of A electrode and B electrode is mainly 221.
Following Bi-based oxide of 2-phase superconductor (Bi 1-y Pb y) 2 -Sr 2 -Ca 1 -Cu 2 -O x ( provided that 0 ≦ y <0.5, x is optional) or, primarily 2223 following oxide superconductor (Bi 1-y Pb y) 2 -Sr 2 -Ca 2 -Cu 3 -O x ( provided that 0 ≦ y <0.5, x is arbitrary) is any one of the channel layer material, primarily 2212 following oxides of (Bi 1-y Pb y) 2 -Sr 2 -Ra 1 -Cu 2 -O x, ( provided that 0 ≦ y <0.5, x is an arbitrary, Ra is Y, and 5. A non-linear superconducting device according to claim 1, wherein at least one of the lanthanoid elements is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26178291A JP3301090B2 (en) | 1991-10-09 | 1991-10-09 | Nonlinear superconducting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26178291A JP3301090B2 (en) | 1991-10-09 | 1991-10-09 | Nonlinear superconducting element |
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| Publication Number | Publication Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7495615B2 (en) | 2003-03-25 | 2009-02-24 | Fujitsu Limited | Antenna coupling module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7495615B2 (en) | 2003-03-25 | 2009-02-24 | Fujitsu Limited | Antenna coupling module |
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| Publication number | Publication date |
|---|---|
| JP3301090B2 (en) | 2002-07-15 |
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