JPH05102500A - Manufacture of photoelectromotive device - Google Patents
Manufacture of photoelectromotive deviceInfo
- Publication number
- JPH05102500A JPH05102500A JP3259218A JP25921891A JPH05102500A JP H05102500 A JPH05102500 A JP H05102500A JP 3259218 A JP3259218 A JP 3259218A JP 25921891 A JP25921891 A JP 25921891A JP H05102500 A JPH05102500 A JP H05102500A
- Authority
- JP
- Japan
- Prior art keywords
- resin layer
- layer
- electrode
- substrate
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、可撓性を有する光起電
力装置の製造方法に関する。FIELD OF THE INVENTION The present invention relates to a method for manufacturing a flexible photovoltaic device.
【０００２】[0002]
【従来の技術】最近、可撓性を有する光起電力装置とし
て、支持基板上に、可撓性、透光性且つ絶縁性を有する
第１樹脂層を形成し、この第１樹脂層上に順次、透明電
極、光活性層を含む薄膜半導体層、背面金属電極及び可
撓性且つ絶縁性を有する第２樹脂層を積層形成した後、
上記支持基板より第１樹脂層を剥離することによって光
起電力装置を製造する方法が特開平１−１０５５８１号
公報に開示されている。2. Description of the Related Art Recently, as a flexible photovoltaic device, a first resin layer having flexibility, translucency and insulation is formed on a support substrate, and the first resin layer is formed on the first resin layer. After sequentially laminating a transparent electrode, a thin film semiconductor layer including a photoactive layer, a back metal electrode, and a flexible and insulating second resin layer,
A method for manufacturing a photovoltaic device by peeling off the first resin layer from the supporting substrate is disclosed in Japanese Patent Application Laid-Open No. 1-105581.
【０００３】その光起電力装置の第１樹脂層には、折り
曲げが可能で耐熱性に優れるポリイミド樹脂が用いられ
ており、また上記第１樹脂層が形成される支持基板とし
ては、光起電力装置の形成後、第１樹脂層を支持基板か
ら剥離し易くするために離型性の優れる硝子基板が用い
られている。The first resin layer of the photovoltaic device uses a polyimide resin which is bendable and has excellent heat resistance, and the support substrate on which the first resin layer is formed is a photovoltaic substrate. A glass substrate having excellent releasability is used in order to facilitate the peeling of the first resin layer from the supporting substrate after forming the device.
【０００４】そして、その基板上に光起電力装置を形成
した後、支持基板毎、水中に浸漬させて、支持基板と第
１樹脂層との界面に水を浸入させることにより、光起電
力装置を支持基板から剥離せしめている。After the photovoltaic device is formed on the substrate, each supporting substrate is immersed in water to allow water to penetrate into the interface between the supporting substrate and the first resin layer. Are separated from the support substrate.
【０００５】[0005]
【発明が解決しようとする課題】然し乍ら、上述の硝子
基板から第１樹脂層を剥離せしめる際には、約３乃至７
日間連続して水中に浸漬させなければならず、その間に
透明電極、薄膜半導体層及び背面金属電極が腐食すると
いう問題が生じていた。However, when the first resin layer is peeled off from the above-mentioned glass substrate, about 3 to 7 is required.
There has been a problem that the transparent electrode, the thin film semiconductor layer, and the backside metal electrode are corroded during the continuous immersing in water.
【０００６】この原因は、第１樹脂層が形成される硝子
基板の表面に、その第１樹脂層中の分子と結合し易い錫
等の不純物が存在することにあると発明者は考察する。The inventor considers that the cause of this is that impurities such as tin which are likely to be bonded to molecules in the first resin layer are present on the surface of the glass substrate on which the first resin layer is formed.
【０００７】[0007]
【課題を解決するための手段】本発明の光起電力装置の
製造方法は、支持基板の一主面上に絶縁性且つ可撓性を
有する第１樹脂層、第１電極層、光活性層を含む薄膜半
導体層、第２電極層及び絶縁性且つ可撓性を有する第２
樹脂層を順次積層形成した後、上記第１樹脂層を上記支
持基板から剥離せしめる光起電力装置の製造方法におい
て、少なくとも上記支持基板の一主面を不純物除去処理
したことを特徴とする。A method for manufacturing a photovoltaic device according to the present invention comprises a first resin layer having an insulating property and flexibility, a first electrode layer, and a photoactive layer on one main surface of a supporting substrate. A thin film semiconductor layer including a second electrode layer and a second insulating and flexible second layer
In the method for manufacturing a photovoltaic device, in which resin layers are sequentially laminated and then the first resin layer is peeled off from the support substrate, at least one main surface of the support substrate is subjected to impurity removal treatment.
【０００８】[0008]
【作用】支持基板の一主面上に、第１樹脂層、透明電
極、光活性層を含む薄膜半導体層、背面金属電極及び第
２樹脂層を積層形成する前に、少なくとも上記支持基板
の一主面上に存在する不純物を除去し、第１樹脂層が形
成される硝子基板とその第１樹脂層との間の結合力（密
着力）を低減させる。Before the first resin layer, the transparent electrode, the thin film semiconductor layer including the photoactive layer, the back metal electrode and the second resin layer are laminated and formed on one main surface of the support substrate, at least one of the support substrate is formed. Impurities existing on the main surface are removed to reduce the bonding force (adhesion force) between the glass substrate on which the first resin layer is formed and the first resin layer.
【０００９】[0009]
【実施例】本発明の光起電力装置の製造方法を図１乃至
図３に示す。1 to 3 show a method of manufacturing a photovoltaic device according to the present invention.
【００１０】図１において、硝子基板１を５乃至５０％
濃度のフッ酸（ＨＦ）に１乃至２０分程度浸漬させ、硝
子基板１の約１乃至２０μｍの深さまでの表面２に存在
する不純物、例えば錫等を除去する。この結果、硝子基
板１の表面２に存在する不純物である錫の存在比は、除
去前２乃至３ａｔｍ．％であったのが、０．１ａｔｍ．
％以下に低減される。In FIG. 1, the glass substrate 1 is 5 to 50%.
The glass substrate 1 is immersed in a hydrofluoric acid (HF) having a concentration for about 1 to 20 minutes to remove impurities such as tin existing on the surface 2 of the glass substrate 1 to a depth of about 1 to 20 μm. As a result, the abundance ratio of tin, which is an impurity present on the surface 2 of the glass substrate 1, is 2 to 3 atm. % Was 0.1 atm.
% Or less.
【００１１】この処理後、図２に示すように、後に形成
する第１樹脂層４が硝子基板１から簡単に剥離されない
ように、硝子基板１の一主面上に、この硝子基板１の周
辺部から１乃至５ｍｍの個所に上記硝子基板１の全周に
沿って、０．１乃至３ｍｍのライン幅のＡｇペースト等
からなる金属ペースト３を印刷し、３００乃至６００℃
で焼成する。After this treatment, as shown in FIG. 2, in order to prevent the first resin layer 4 to be formed later from being easily peeled off from the glass substrate 1, the periphery of the glass substrate 1 is formed on one main surface of the glass substrate 1. A metal paste 3 made of Ag paste or the like having a line width of 0.1 to 3 mm is printed at a position 1 to 5 mm from the portion along the entire circumference of the glass substrate 1 at 300 to 600 ° C.
Bake at.
【００１２】この後、図３（ａ）に示すように、透光
性、絶縁性且つ可撓性のポリイミドのワニスである第１
樹脂層４をスピンコータ等で硝子基板１上に均一に、厚
さ５乃至１００μｍで形成し、１００乃至３００℃まで
段階的に昇温しながら処理する。Thereafter, as shown in FIG. 3A, a first transparent, insulating and flexible polyimide varnish is used.
The resin layer 4 is uniformly formed with a thickness of 5 to 100 μm on the glass substrate 1 by a spin coater or the like, and the temperature is raised stepwise to 100 to 300 ° C. for processing.
【００１３】その後、第１樹脂層４上に、酸化錫（Ｓｎ
Ｏ2）、酸化インジウム錫（ＩＴＯ）等からなる透明電
極５、ｐ型、ｉ型及びｎ型又はｐｎ接合等の光活性層を
含む厚さ３０００乃至７０００Åのアモルファスシリコ
ン、アモルファスシリコンカーバイト、アモルファスシ
リコンゲルマニウム等のアモルファスシリコン系の薄膜
半導体層６及びアルミニウム又はアルミニウムとチタン
との２重構造からなる厚さ４０００Å乃至２μｍの背面
金属電極７を順次形成する。Then, tin oxide (Sn) is formed on the first resin layer 4.
O 2), indium tin oxide (ITO) transparent electrode made of such 5, p-type, i-type and n-type or pn thickness 3000 to 7000Å amorphous silicon containing photoactive layer of bonding such as amorphous silicon carbide, amorphous An amorphous silicon-based thin film semiconductor layer 6 such as silicon germanium and a back metal electrode 7 having a thickness of 4000 Å to 2 μm and having a double structure of aluminum or aluminum and titanium are sequentially formed.
【００１４】次に、背面金属電極７を保護すべく、この
上面に厚さ２０μｍ乃至１ｍｍのＥＶＡ、ＰＥＴ等から
なる熱可塑性樹脂シートである第２樹脂層８を図３
（ｂ）のように形成する。Next, in order to protect the rear metal electrode 7, a second resin layer 8 which is a thermoplastic resin sheet made of EVA, PET or the like having a thickness of 20 μm to 1 mm is formed on the upper surface of FIG.
It is formed as shown in (b).
【００１５】最後に、光起電力装置を硝子基板１から剥
離すべく、図３（ｃ）に示すように金属ペースト３の内
側を島状に切断し、水中に硝子基板１ごと浸漬すること
により、約１乃至３０時間で硝子基板１から第１樹脂層
４を剥離せしめることができる。Finally, in order to separate the photovoltaic device from the glass substrate 1, the inside of the metal paste 3 is cut into islands as shown in FIG. 3 (c), and the glass substrate 1 is immersed in water. The first resin layer 4 can be peeled off from the glass substrate 1 in about 1 to 30 hours.
【００１６】このように、第１樹脂層４を形成する前
に、少なくとも第１樹脂層４が形成される硝子基板１表
面の不純物を除去することによって、第１樹脂層４と硝
子基板１との結合力（密着力）を低減させることができ
る結果、剥離のための水中への浸漬時間は短時間とな
り、透明電極５、薄膜半導体層６及び背面金属電極７に
腐食を与えることは全くなくなる。As described above, before forming the first resin layer 4, at least impurities on the surface of the glass substrate 1 on which the first resin layer 4 is formed are removed, so that the first resin layer 4 and the glass substrate 1 are separated from each other. As a result, the time required for immersion in water for peeling can be shortened, and the transparent electrode 5, the thin film semiconductor layer 6 and the backside metal electrode 7 will not be corroded at all. .
【００１７】なお、本実施例では、硝子基板１側から透
明電極５、薄膜半導体層６及び背面金属電極７を順に形
成したが、これには限らない。In this embodiment, the transparent electrode 5, the thin film semiconductor layer 6 and the back metal electrode 7 are formed in this order from the glass substrate 1 side, but the invention is not limited to this.
【００１８】[0018]
【発明の効果】本発明によれば、支持基板の少なくとも
一主面を不純物除去処理した後、透光性、絶縁性且つ可
撓性を有する第１樹脂層、第１電極層、光活性層を含む
薄膜半導体層、第２電極層及び絶縁性且つ可撓性を有す
る第２樹脂層を順次積層形成することにより、上記支持
基板から第１樹脂層を水中で剥離せしめる際に極めて短
時間のうちに、その作業を行うことができる結果、第１
電極層、光活性層を含む薄膜半導体層、第２電極層の腐
食を防止することが全くなくなる。According to the present invention, the first resin layer, the first electrode layer, and the photoactive layer having a light-transmitting property, an insulating property, and a flexibility are obtained after removing impurities from at least one main surface of the supporting substrate. By sequentially laminating a thin-film semiconductor layer containing, a second electrode layer, and an insulating and flexible second resin layer, an extremely short time is required when the first resin layer is peeled from the support substrate in water. As a result of being able to do that work,
Corrosion of the electrode layer, the thin film semiconductor layer including the photoactive layer, and the second electrode layer is completely prevented.
【図１】本発明の不純物処理した支持基板の断面図FIG. 1 is a cross-sectional view of a support substrate treated with impurities according to the present invention.
【図２】本発明に係わる金属ペーストを印刷した後の支
持基板の上面図並びに断面図2A and 2B are a top view and a cross-sectional view of a support substrate after printing a metal paste according to the present invention.
【図３】本発明に係わる光起電力装置の製造を工程順に
示す断面図3A to 3C are cross-sectional views showing steps of manufacturing a photovoltaic device according to the present invention.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中川 誠 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 岸 靖雄 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Makoto Nakagawa, 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor, Yasuo Kishi 2-18, Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Within the corporation
Claims (2)
を有する第１樹脂層、第１電極層、光活性層を含む薄膜
半導体層、第２電極層及び絶縁性且つ可撓性を有する第
２樹脂層を順次積層形成した後、上記第１樹脂層を上記
支持基板から剥離せしめる光起電力装置の製造方法にお
いて、少なくとも上記支持基板の一主面を不純物除去処
理したことを特徴とする光起電力装置の製造方法。1. An insulating and flexible first resin layer, a first electrode layer, a thin film semiconductor layer including a photoactive layer, a second electrode layer, and an insulating and flexible layer on one main surface of a supporting substrate. In the method for manufacturing a photovoltaic device, in which the first resin layer is peeled off from the support substrate after the second resin layer having the property to be sequentially laminated, at least one main surface of the support substrate is subjected to the impurity removal treatment. A method for manufacturing a photovoltaic device characterized.
フッ酸によって不純物除去処理したことを特徴とする請
求項１記載の光起電力装置の製造方法。2. The method for manufacturing a photovoltaic device according to claim 1, wherein one main surface of the support substrate made of glass is subjected to an impurity removal treatment with hydrofluoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3259218A JP2983717B2 (en) | 1991-10-07 | 1991-10-07 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3259218A JP2983717B2 (en) | 1991-10-07 | 1991-10-07 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05102500A true JPH05102500A (en) | 1993-04-23 |
| JP2983717B2 JP2983717B2 (en) | 1999-11-29 |
Family
ID=17331045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3259218A Expired - Fee Related JP2983717B2 (en) | 1991-10-07 | 1991-10-07 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2983717B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294807A (en) * | 2004-02-17 | 2005-10-20 | Citizen Watch Co Ltd | Method of manufacturing photoelectric transducer |
| JP2014022459A (en) * | 2012-07-13 | 2014-02-03 | Asahi Kasei E-Materials Corp | Laminate and manufacturing method of flexible device |
-
1991
- 1991-10-07 JP JP3259218A patent/JP2983717B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294807A (en) * | 2004-02-17 | 2005-10-20 | Citizen Watch Co Ltd | Method of manufacturing photoelectric transducer |
| JP2014022459A (en) * | 2012-07-13 | 2014-02-03 | Asahi Kasei E-Materials Corp | Laminate and manufacturing method of flexible device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2983717B2 (en) | 1999-11-29 |
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