JPH05100410A - Reticule - Google Patents
ReticuleInfo
- Publication number
- JPH05100410A JPH05100410A JP25900991A JP25900991A JPH05100410A JP H05100410 A JPH05100410 A JP H05100410A JP 25900991 A JP25900991 A JP 25900991A JP 25900991 A JP25900991 A JP 25900991A JP H05100410 A JPH05100410 A JP H05100410A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- light shielding
- shielding pattern
- circuit pattern
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路の製造
に用いられるレチクルに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle used for manufacturing a semiconductor integrated circuit.
【０００２】[0002]
【従来の技術】半導体集積回路の微細パターン化に従っ
て、ウェハーに回路を焼き付ける露光機はステッパーが
主流となっている。ステッパーではウェハー上のパター
ンサイズの１〜１０倍のパターンサイズを有するレチク
ルが使用される。レチクルを作成する為の回路バターン
の描画には電子ビーム露光装置が用いられるが、この
時、電子ビームに感光するレジストとして、後のプロセ
ス処理工程で感光領域が除去されるポジァァレジストを
用いた場合に、できあがるレチクルの構成は、従来、図
３に示す様に、透明なガラス基板１上にクロム、酸化ク
ロム等の遮光性金属膜で回路パターン２が形成されたパ
ターン領域とその周囲の遮光領域３となっていた。2. Description of the Related Art Steppers have become the mainstream of exposure machines for printing circuits on a wafer according to the fine patterning of semiconductor integrated circuits. The stepper uses a reticle having a pattern size 1 to 10 times larger than the pattern size on the wafer. An electron beam exposure device is used to draw a circuit pattern to create a reticle, but at this time, when a resist that is exposed to an electron beam is a positive resist whose exposed area is removed in a subsequent process step, As shown in FIG. 3, conventionally, the structure of the completed reticle is a pattern region in which a circuit pattern 2 is formed of a light-shielding metal film such as chromium or chromium oxide on a transparent glass substrate 1 and a light-shielding region 3 around it. It was.
【０００３】[0003]
【発明が解決しようとする課題】レチクルは絶縁体であ
るガラス基板上に金属膜を有する構造となっているた
め、クリーンルーム内の空気の流れや、純水を用いた高
圧シャワー水洗、あるいは絶縁体のレチクルキャリア
や、ケース等によって帯電する。金属パターンの領域が
広い場合には数ＫＶから数十ＫＶに帯電することもあ
る。。従来のレチクルでは帯電している時にハンドリン
グ操作等でレチクル周囲の金属膜部が設備，人間の手等
に接触すると金属膜の電荷は瞬時に除去されるが、内部
パターン領域に孤立した金属パターン部があり、かつ、
無電荷となった領域と接近している場合、その電位差に
より、放電現象が生じ、金属パターンの一部が破壊され
るという問題点があった。Since the reticle has a structure in which a metal film is formed on a glass substrate which is an insulator, the flow of air in a clean room, high pressure shower rinsing using pure water, or insulator Is charged by the reticle carrier, case, etc. When the area of the metal pattern is large, it may be charged to several KV to several tens KV. . In the conventional reticle, when the metal film around the reticle comes into contact with equipment, human hands, etc. during handling while being charged, the charge of the metal film is instantly removed, but the metal pattern part isolated in the internal pattern area And, and
When it is close to the non-charged region, there is a problem that a potential difference causes a discharge phenomenon and a part of the metal pattern is destroyed.
【０００４】[0004]
【課題を解決するための手段】本発明のレチクルは、透
明基板の一主面に形成された回路パターンと、この回路
パターンの周囲に形成された遮光パターンとを有するレ
チクルにおいて、遮光パターンの外側に静電破壊防止用
の分離領域が形成されているものである。The reticle of the present invention is a reticle having a circuit pattern formed on one main surface of a transparent substrate and a light-shielding pattern formed around the circuit pattern, the outside of the light-shielding pattern. A separation region for preventing electrostatic breakdown is formed on the.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の第１の実施例の平面図である。ガラ
ス基板１上にＣｒ等の金属を披着させて回路パターン２
と遮光パターン３を形成する。この際、遮光パターンの
外側に幅０．５〜２ｍｍで遮光パターン及び回路パター
ンを外周金属膜５から分離する為の金属膜が除去された
領域（分離領域）４を形成する。The present invention will be described below with reference to the drawings. FIG. 1 is a plan view of the first embodiment of the present invention. A circuit pattern 2 is formed by depositing a metal such as Cr on the glass substrate 1.
And the light shielding pattern 3 is formed. At this time, a region (separation region) 4 having a width of 0.5 to 2 mm and a metal film for separating the light shielding pattern and the circuit pattern from the outer peripheral metal film 5 is formed outside the light shielding pattern.
【０００６】このように構成されたレチクルにおいて
は、静電気が発生した場合に外周の金属膜５の電荷がア
ースされ電位がゼロとなっても、静電破壊防止用の分離
領域４が存在するために、回路パターン領域あるいは遮
光パターン領域で放電が発生することがなく静電破壊を
防止できる。In the reticle thus constructed, the separation region 4 for preventing electrostatic breakdown exists even if the electric charge of the metal film 5 on the outer periphery is grounded and the potential becomes zero when static electricity is generated. In addition, electrostatic discharge can be prevented without causing discharge in the circuit pattern area or the light shielding pattern area.
【０００７】図２は本発明の第２の実施例の平面図であ
る。図２において、ガラス基板１上の遮光パターン３の
外側に幅０．５〜２ｍｍの静電破壊防止用の分離領域４
が形成されでいるが、分離領域内には少なくとも１本以
上の周囲と独立した枠パターン６が幅数十ミクロンから
数百ミクロンで形成されている。FIG. 2 is a plan view of the second embodiment of the present invention. In FIG. 2, a separation region 4 for preventing electrostatic breakdown having a width of 0.5 to 2 mm is provided outside the light shielding pattern 3 on the glass substrate 1.
However, at least one or more frame patterns 6 independent of the periphery are formed in the separation region with a width of several tens of microns to several hundreds of microns.
【０００８】この用に構成されたレチクルは分離領域の
金属膜が除去される面積を小さくできるため、電子ビー
ム描画装置を用いた露光時間を短縮できる利点がある。
本実施例の場合、外周の金属膜と静電破壊防止用の分離
領域内にある枠パターンの間で放電が生じ静電破壊を生
じることがあっても、ステッパーで使用される欠陥があ
ってはならない領域の外側なので問題ない。The reticle configured for this purpose has an advantage that the exposure time using the electron beam drawing apparatus can be shortened because the area where the metal film in the isolation region is removed can be reduced.
In the case of this embodiment, even if discharge may occur between the metal film on the outer periphery and the frame pattern in the separation area for preventing electrostatic breakdown, electrostatic breakdown may occur, but there is a defect used in the stepper. There is no problem because it is outside the area that cannot be covered.
【０００９】[0009]
【発明の効果】以上説明したように本発明はレチクル上
の使用しない部分である遮光パターンの外側に、回路パ
ターン及び遮光パターンを外周の金属膜と分離するため
の静電破壊防止用の分離領域を形成したので、静電気に
よる、回路パターン及び遮光パターンの破壊を防止でき
る効果がある。As described above, according to the present invention, a separation area for preventing electrostatic breakdown for separating the circuit pattern and the light-shielding pattern from the metal film on the outer periphery is provided outside the light-shielding pattern, which is an unused portion on the reticle. Since this is formed, there is an effect that the circuit pattern and the light shielding pattern can be prevented from being destroyed by static electricity.
【図１】本発明の第１の実施例を示す平面図である。FIG. 1 is a plan view showing a first embodiment of the present invention.
【図２】第２の実施例の平面図である。FIG. 2 is a plan view of a second embodiment.
【図３】従来のレチクルの平面図である。FIG. 3 is a plan view of a conventional reticle.
１ ガラス基板 ２ 回路パターン ３ 遮光パターン ４ 静電破壊防止用（分離領域） ５ 外周金属膜 ６ 枠パターン 1 Glass substrate 2 Circuit pattern 3 Light-shielding pattern 4 Electrostatic damage prevention (separation area) 5 Peripheral metal film 6 Frame pattern
Claims (1)
ーンと、回路パターンの周囲に形成された遮光パターン
を有するレチクルにおいて、前記遮光パターンを内周と
外周に分離する分離領域が形成されていることを特徴と
するレチクル。1. A reticle having a circuit pattern formed on one main surface of a transparent substrate and a light-shielding pattern formed around the circuit pattern, wherein a separation region for separating the light-shielding pattern into an inner circumference and an outer circumference is formed. A reticle that is characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25900991A JPH05100410A (en) | 1991-10-07 | 1991-10-07 | Reticule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25900991A JPH05100410A (en) | 1991-10-07 | 1991-10-07 | Reticule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05100410A true JPH05100410A (en) | 1993-04-23 |
Family
ID=17328086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25900991A Pending JPH05100410A (en) | 1991-10-07 | 1991-10-07 | Reticule |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05100410A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000036468A1 (en) * | 1998-12-14 | 2000-06-22 | Koninklijke Philips Electronics N.V. | Photomask with a mask edge provided with a ring-shaped esd protection area |
| JP2009086385A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Photomask and method for manufacturing the same, and pattern transfer method |
| JP2010122396A (en) * | 2008-11-18 | 2010-06-03 | Sony Corp | Photomask |
| US7883823B2 (en) | 2007-02-02 | 2011-02-08 | Fujitsu Semiconductor Limited | Photomask and method for manufacturing a semiconductor device using the photomask |
| CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
| JP2022509247A (en) * | 2019-01-17 | 2022-01-20 | 長江存儲科技有限責任公司 | Photomask with electrostatic discharge protection |
-
1991
- 1991-10-07 JP JP25900991A patent/JPH05100410A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000036468A1 (en) * | 1998-12-14 | 2000-06-22 | Koninklijke Philips Electronics N.V. | Photomask with a mask edge provided with a ring-shaped esd protection area |
| US6291114B1 (en) | 1998-12-14 | 2001-09-18 | .S. Philips Corporation | Photomask with a mask edge provided with a ring-shaped ESD protection area |
| US7883823B2 (en) | 2007-02-02 | 2011-02-08 | Fujitsu Semiconductor Limited | Photomask and method for manufacturing a semiconductor device using the photomask |
| JP2009086385A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Photomask and method for manufacturing the same, and pattern transfer method |
| JP2010122396A (en) * | 2008-11-18 | 2010-06-03 | Sony Corp | Photomask |
| CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
| JP2022509247A (en) * | 2019-01-17 | 2022-01-20 | 長江存儲科技有限責任公司 | Photomask with electrostatic discharge protection |
| US11493842B2 (en) | 2019-01-17 | 2022-11-08 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
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