JPH0499934A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPH0499934A JPH0499934A JP21776690A JP21776690A JPH0499934A JP H0499934 A JPH0499934 A JP H0499934A JP 21776690 A JP21776690 A JP 21776690A JP 21776690 A JP21776690 A JP 21776690A JP H0499934 A JPH0499934 A JP H0499934A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- temperature
- thin film
- amorphous silicon
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 10
- 230000001681 protective effect Effects 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 206010037660 Pyrexia Diseases 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は感温センサに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a temperature sensor.
温度や温度変化を測る有用な感温センサとして、Ｐｔ等
の金属抵抗体が感温部となっているもの、あるいは、半
導体を利用した所謂サーミスタ抵抗体が感温部となって
いるものがある。抵抗体の抵抗値が温度変化に伴い変化
することを利用するセンサである。これらの感温センサ
は、電気的な出力が直接得られ、工業的製造に適するこ
とから広く実用に供せられているが、近年、熱応答性を
向上させるために、セン号全体の小型化、抵抗体の薄膜
化が進められており、特に、薄膜化の容易なＰ、 を抵
抗体が注目されている。As useful temperature-sensitive sensors for measuring temperature and temperature changes, there are those whose temperature-sensing part is made of a metal resistor such as Pt, or whose temperature-sensing part is a so-called thermistor resistor using a semiconductor. . This sensor utilizes the fact that the resistance value of a resistor changes with temperature changes. These temperature-sensitive sensors are widely used in practical use because they can directly obtain electrical output and are suitable for industrial manufacturing. The thinning of resistors is progressing, and in particular, P resistors, which can be easily made thin, are attracting attention.
しかしながら、Ｐｔ抵抗体の場合、小面積の感温部で僅
かな温度変化を捉えるということは難しい。ｐｔ抵抗体
は、抵抗温度係数が小さいし、それに抵抗値が低いから
である。例えば、４ｉｍＸ４ｍｍの面積の支持基板（チ
ップ）にＰｔ薄膜抵抗体を形成した場合、Ｐｔ薄膜抵抗
体の抵抗値は約５にΩ程度であり、測定電流１００μＡ
の場合で感度は約１．８ ｍ Ｖ ／ ’Ｃと低い。こ
のような低感度では０．１℃以下の僅かな温度変化を捉
えることは困難なのである。測定電流を増やせば感度は
多少は上がるけれども、消費電流が増え抵抗体自体の発
熱による悪影響が無視できなくなるという別の問題が出
てくる。However, in the case of a Pt resistor, it is difficult to detect slight temperature changes with a small-area temperature sensing section. This is because the PT resistor has a small temperature coefficient of resistance and a low resistance value. For example, when a Pt thin film resistor is formed on a support substrate (chip) with an area of 4im x 4mm, the resistance value of the Pt thin film resistor is about 5Ω, and the measurement current is 100 μA.
In this case, the sensitivity is as low as about 1.8 mV/'C. With such low sensitivity, it is difficult to detect slight temperature changes of 0.1°C or less. Increasing the measurement current will increase the sensitivity to some extent, but another problem will arise: the current consumption will increase, and the adverse effects of the heat generated by the resistor itself cannot be ignored.
一方、後者のサーミスタ抵抗体は薄膜化する場合に製造
上の制約が大きいという問題がある。金属抵抗体の薄膜
化の場合に比べ、材料面、コスト面、製造面で難しさが
あるのである。光検知に適した感温センサは、薄い基板
部分上にサーミスタ抵抗体を設けるようにするが、この
場合に特に作製プロセス等の制約の為により困難である
。On the other hand, the latter thermistor resistor has a problem in that there are significant manufacturing restrictions when making the film thin. Compared to thinning metal resistors, this method is more difficult in terms of materials, costs, and manufacturing. A temperature-sensitive sensor suitable for light detection is constructed by providing a thermistor resistor on a thin substrate portion, but this is more difficult due to constraints such as the manufacturing process.
この発明は、上記の事情に鑑み、応答速度が早く、微小
な温度変化を捉えるのに適しており、しかも、製造し易
い感温センサを提供することを課題とする。In view of the above circumstances, it is an object of the present invention to provide a temperature-sensitive sensor that has a fast response speed, is suitable for detecting minute temperature changes, and is easy to manufacture.
上記課題を解決するため、請求項１〜３記載の感温セン
サでは、感温部における温度変化に伴い抵抗値が変化す
る感温部用抵抗体がアモルファスシリコン薄膜からなる
構成をとるようにしているこの発明におけるアモルファ
スシリコン（以下、ｒａ−３ｉＪと言う）薄膜は、２０
０人〜５μｍ程度の厚みのものである。In order to solve the above-mentioned problems, in the temperature-sensitive sensor according to claims 1 to 3, the resistor for the temperature-sensing part whose resistance value changes as the temperature changes in the temperature-sensing part is made of an amorphous silicon thin film. The amorphous silicon (hereinafter referred to as RA-3iJ) thin film in this invention is 20
The thickness is about 0 to 5 μm.
ａ−３ｉ薄膜の場合、普通、ボロン（Ｂ）やリン（Ｐ）
等のドーピング物質がドープされており、ドーピング物
質の種類やドーピング量により、Ｂ定数が２０００〜７
５００程度、室温での比抵抗が１０２〜１０１０Ω程度
のものが得られる。いくつかのａ−３ｉ薄膜についての
比抵抗の対温度変化特性を第３図に具体的に示す。In the case of a-3i thin films, boron (B) and phosphorus (P) are usually used.
The B constant is 2000 to 7 depending on the type of doping material and the amount of doping.
500Ω, and a specific resistance of about 102 to 1010Ω at room temperature can be obtained. FIG. 3 specifically shows the specific resistance versus temperature change characteristics of several a-3i thin films.
なお、絶対温度Ｔでの比抵抗Ｒ（Ｔ）は下記式％式％
）］
〔但し、Ｔｏは基準とする温度、Ｒｏは温度Ｔ０での比
抵抗である。〕
上式からＢ定数が大きいほど温度変化に対する比抵抗変
化は大きいということが分かる。第３図に示したａ−３
ｉ薄膜の比抵抗の対温度変化特性は温度センサ用として
十分である。第３図においては、−点鎖線の曲線は左側
の一点鎖線目盛りに従い、二点鎖線の曲線は右側の二点
鎖線目盛りに従う。曲線■〜■はプラズマＣＶＤによる
ポロンドープｐ型ａ−３ｔ薄膜のものであり、膜形成に
用いたジボランとモノシランとのガス流量比は図中に示
した通りである。曲線■〜■はプラズマＣＶＤによるリ
ンドープｎ型ａ−３ｉｉ膜のものであり、膜形成に用い
たホスフィンとモノシランとのガス流量比は図中に示し
た通りである。曲線■ばプラズマＣＶＤによるｉ型ａ−
３ｉ薄膜のものである。Note that the specific resistance R(T) at the absolute temperature T is expressed by the following formula (%)] [However, To is the reference temperature, and Ro is the specific resistance at the temperature T0. ] From the above equation, it can be seen that the larger the B constant, the larger the change in specific resistance with respect to temperature change. a-3 shown in Figure 3
The specific resistance of the i-thin film with respect to temperature change characteristics is sufficient for use as a temperature sensor. In FIG. 3, the dash-dotted line curve follows the dash-dotted scale on the left, and the dash-double curve follows the dash-double scale on the right. Curves 1 to 2 are for poron-doped p-type a-3t thin films formed by plasma CVD, and the gas flow ratios of diborane and monosilane used for film formation are as shown in the figure. Curves 1 to 2 are for phosphorous-doped n-type a-3ii films formed by plasma CVD, and the gas flow ratios of phosphine and monosilane used for film formation are as shown in the figure. Curve ■ I type a- by plasma CVD
3i thin film.
ａ−３ｉ薄膜には対となる抵抗検出用電極が設けられて
いる。比抵抗が小さい場合には、普通、請求項２のよう
に、対となる抵抗検出用電極がａＳｔ薄膜の一側面にお
いて所定の間隔をあけて形成される。この時、画電極は
櫛歯状に入り組んだ状態で形成されることが多い。比抵
抗が大きい場合には、普通、請求項３のように、対とな
る抵抗検出用電極がａ−３ｉ薄膜の表面側と裏面側にそ
れぞれ分かれて形成される。The a-3i thin film is provided with a pair of resistance detection electrodes. When the resistivity is small, a pair of resistance detection electrodes are usually formed at a predetermined distance on one side of the aSt thin film. At this time, the picture electrode is often formed in a complicated comb-like shape. When the specific resistance is large, a pair of resistance detection electrodes is usually formed separately on the front side and the back side of the a-3i thin film, respectively.
この発明の感温センサは、例えば、流体の温度や温度変
化を測ったり、これらの測定結果から流体の流れる速度
測定、流れる方向を知る場合に利用できるし、あるいは
、光吸収に伴う温度変化を測ったり、この測定結果から
光検知や物体検知等を行う場合等に利用することができ
る。The temperature sensor of the present invention can be used, for example, to measure the temperature or temperature change of a fluid, or to determine the flow speed and flow direction of the fluid from these measurement results, or to measure the temperature change due to light absorption. It can be used to perform light detection, object detection, etc. based on the measurement results.
この発明の感温センサは微小な温度変化を容易に捉える
のに適する。抵抗体のａ−３ｉ薄膜はＢ定数、比抵抗が
十分であり、容易に高感度化が図れるからである。Ｂ定
数が十分であれば僅かの温度変化でも抵抗値に相応の変
化が現れる。それに、比抵抗が大きいと感温部の抵抗体
の抵抗値を大きくし、同じ温度変化量に対して大きな出
力変化量が得られるようにできる。高感度であれば、僅
かな温度変化が十分に大きな出力変化となってあられれ
る（高感度となる）ため、微小な温度変化を容易に捉え
られるのである。The temperature sensor of the present invention is suitable for easily detecting minute temperature changes. This is because the a-3i thin film of the resistor has sufficient B constant and specific resistance, and can easily achieve high sensitivity. If the B constant is sufficient, even a slight temperature change will cause a corresponding change in the resistance value. In addition, if the specific resistance is large, the resistance value of the resistor of the temperature sensing section can be increased, and a large amount of output change can be obtained for the same amount of temperature change. If the sensitivity is high, a small change in temperature will result in a sufficiently large change in output (high sensitivity), making it possible to easily detect minute changes in temperature.
抵抗体がａ−３ｉ薄膜である場合、製造し易い上記のよ
うに大きな抵抗値の抵抗体とする場合、比抵抗がもし小
さいと、第６図に示す感温センサ３０のように、抵抗体
３１を幅狭で薄い膜を長い距離を蛇行させた形状とする
必要がある。簡単に作成するという訳にいかない。これ
に対し、高比抵抗のａ−３ｉ薄膜の場合、膜厚や形状を
格別なものとせずとも、十分に大きな抵抗値の抵抗体を
簡単に作れる。When the resistor is an a-3i thin film, when the resistor is easy to manufacture and has a large resistance value as described above, if the resistivity is small, the resistor is 31 needs to be shaped like a narrow, thin film meandering over a long distance. It cannot be said that it is easy to create. On the other hand, in the case of an a-3i thin film with a high specific resistance, a resistor with a sufficiently large resistance value can be easily produced without making the film thickness or shape special.
また、従来の金属抵抗体では２００〜３００Å以下の極
薄化は困難である。極薄化は比抵抗（上昇）や抵抗温度
特性（下降）の変動を伴うからである。これに対し、こ
の発明の感温センサは極薄化にも容易に対応でき自由度
が高い。ａ−８ｉ薄膜の場合、２００Å以下の極く薄い
厚みの場合にも５０００人の場合と同じ特性を示すから
である例えば、ａ−３ｉ薄膜の表裏面に対となる抵抗検
出用電極を設けるセンサで、厚みが薄くＢ定数の大きい
構成にしたい場合、何ら問題なく厚みを必要なだけ薄く
できる。ａ−３ｉ薄膜の一側面において対となる抵抗検
出用電極を設けるセンサで、電極間距離を変えずにＢ定
数が小さく抵抗値の高い構成にしたいような場合も、や
はり、何ら問題なく厚みを必要なだけ薄くして対応でき
る。Furthermore, it is difficult to reduce the thickness of conventional metal resistors to 200 to 300 Å or less. This is because extremely thinning is accompanied by changes in specific resistance (increase) and resistance temperature characteristics (decrease). In contrast, the temperature-sensitive sensor of the present invention can easily be made extremely thin and has a high degree of freedom. This is because the a-8i thin film exhibits the same characteristics as the case of 5,000 people even when it has an extremely thin thickness of 200 Å or less.For example, a sensor in which a pair of resistance detection electrodes is provided on the front and back surfaces of the a-3i thin film If it is desired to have a structure that is thin and has a large B constant, the thickness can be made as thin as necessary without any problem. If you want to create a sensor with a pair of resistance detection electrodes on one side of the a-3i thin film and have a structure with a small B constant and high resistance value without changing the distance between the electrodes, you can also increase the thickness without any problem. You can make it as thin as you need.
ａ−３ｉ薄膜の場合は、通常のプラズマＣＶＤ法等で、
薄い基板部分でも容易に膜材料を堆積し抵抗体を形成す
ることができるため、センサ製造は容易である。In the case of a-3i thin film, by normal plasma CVD method etc.
Sensor manufacturing is easy because film materials can be easily deposited and resistors can be formed even on thin substrate parts.
それに、抵抗体が薄膜であるため、熱応答性が良く、小
型化も容易であることは勿論である。In addition, since the resistor is a thin film, it has good thermal response and can be easily miniaturized.
続いて、この発明の感温センサの実施例を図面を参照し
ながら詳しく説明する。Next, embodiments of the temperature sensor of the present invention will be described in detail with reference to the drawings.
第１図は、この発明にかかる感温センサの一例を上方よ
りみた状態をあられし、第２図は、同感温センザを位置
Ａ−Ａで垂直に断面してあられず感温センサ１では、感
温部用の抵抗体２が支持基板３の上に設けられている。FIG. 1 shows an example of a temperature-sensitive sensor according to the present invention viewed from above, and FIG. 2 shows a vertical cross-section of the temperature-sensitive sensor at position A-A. A resistor 2 for a temperature sensing section is provided on a support substrate 3.
抵抗体２はリンドープｎ型ａ−３ｉ薄膜からなる。この
抵抗体２は窒化シリコンの保護膜６で覆われ保護されて
いる（第１図では保護膜６が省略されている）。The resistor 2 consists of a phosphorus-doped n-type a-3i thin film. This resistor 2 is covered and protected by a silicon nitride protective film 6 (the protective film 6 is omitted in FIG. 1).
対となる抵抗検出用電極４．４は、ａ−３ｉ薄膜の下側
において所定の間隔をあけ第１図にみるように、櫛歯状
に入り組むように形成されている。電極４は間隔０．５
ｉｎ、歯部４ａの長さ２．０ ｍ＋＊、歯部４ａの幅
０．５■である。The pair of resistance detection electrodes 4.4 are formed in a comb-teeth shape at a predetermined interval below the a-3i thin film, as shown in FIG. Electrode 4 has a spacing of 0.5
in, the length of the tooth portion 4a is 2.0 m+*, and the width of the tooth portion 4a is 0.5 cm.
支持基板３は基材Ｎ３ａの表面に絶縁物層３ｂがあり、
裏面に絶縁物層３Ｃがある積層構成である。電極４、抵
抗体２は絶縁物層３ｂ側に設けられている。電極４の端
は保護膜６で覆われておらず外部回路に接続される端子
部４ｂになる。The support substrate 3 has an insulating layer 3b on the surface of the base material N3a,
It has a laminated structure with an insulator layer 3C on the back surface. The electrode 4 and the resistor 2 are provided on the insulator layer 3b side. The end of the electrode 4 is not covered with the protective film 6 and becomes a terminal portion 4b connected to an external circuit.
この感温センサ１は、抵抗体２の室温抵抗値的５０にΩ
、Ｂ定数が２３２０であり、測定電流１００μＡでの室
温付近の出力感度は１２９ｍＶ／℃と従来の金属抵抗体
の場合よりも優れている。This temperature sensor 1 has a resistance value of 50Ω at room temperature of the resistor 2.
, the B constant is 2320, and the output sensitivity near room temperature at a measurement current of 100 μA is 129 mV/° C., which is better than that of a conventional metal resistor.
続いて、上記感温センサ１の製造について説明する。Next, manufacturing of the temperature sensor 1 will be explained.
まず、基板３たるシリコン基板の表裏面に絶縁物層３ｂ
、３Ｃを形成した。すなわち、シリコン基板の表面を熱
酸化法により酸化し、厚み１μｌのＳｉ０ｇ膜を形成す
るのである。基材層３ａは勿論シリコン層である。First, an insulator layer 3b is formed on the front and back surfaces of a silicon substrate, which is a substrate 3.
, 3C was formed. That is, the surface of the silicon substrate is oxidized by thermal oxidation to form a 1 μl thick Si0g film. The base material layer 3a is of course a silicon layer.
つぎに、絶縁物層３ｂの上に電子ビーム蒸着法により厚
み２０００人のアルミニウム薄膜を形成する。そしてア
ルミニウム薄膜を、フォトリソグラフィ技術を利用し所
定のパターン以外の部分をエツチング除去し、電極４．
４を形成する。なお、エツチング液は硝酸である。Next, an aluminum thin film having a thickness of 2,000 wafers is formed on the insulating layer 3b by electron beam evaporation. Then, using photolithography technology, the aluminum thin film is etched away from the portions other than the predetermined pattern, and electrode 4.
form 4. Note that the etching solution is nitric acid.
電極４の形成に続き、抵抗体２を形成した。すなわち、
ホスフィンとモノシランを使うプラズマＣＶＤ法により
、厚み５０００人のｎ型ａ−３ｉ薄膜を積層する。つい
で、フォトリソグラフィ技術を利用して所定パターン以
外の部分をエツチング除去し、抵抗体２を設けるのであ
る。なお、ホスフィンのモノシランに対するガス混合比
率は１％であった。なお、エツチング液は、硝酸とフン
酸を３０＝１で混ぜ合わせた溶液である。Following the formation of the electrode 4, the resistor 2 was formed. That is,
N-type A-3i thin films with a thickness of 5,000 wafers are laminated by plasma CVD using phosphine and monosilane. Then, using photolithography technology, the portions other than the predetermined pattern are etched away, and the resistor 2 is provided. Note that the gas mixing ratio of phosphine to monosilane was 1%. The etching solution is a solution in which nitric acid and hydronic acid are mixed in a ratio of 30=1.
この後、プラズマＣＶＤ法により厚み５０００人の窒化
シリコン膜を堆積し、保護膜６を形成し、端子部４ｂを
露出させるために、プラズマエノチングにより保護膜６
の一部を除去すれば、感温センサの完成である。Thereafter, a silicon nitride film with a thickness of 5000 nm is deposited by plasma CVD to form a protective film 6, and in order to expose the terminal portion 4b, the protective film 6 is etched by plasma etching.
By removing a part of the temperature sensor, the temperature sensor is completed.
続いて、他の実施例を説明する。Next, other embodiments will be described.
第４図は、この発明にかかる感温センサの他の例を上方
よりみた状態をあられし、第５図は、同感温センサを位
置Ａ’−Ａ’で垂直に断面してあられす。FIG. 4 shows another example of the temperature-sensitive sensor according to the present invention viewed from above, and FIG. 5 shows a vertical cross-section of the same temperature-sensitive sensor at the position A'-A'.
感温センサ１′では感温部用の抵抗体２２が支持基板２
３上に設けられている。抵抗体２２はｉ型ａ−３ｉ薄膜
からなる。この抵抗体２２は窒化シリコンの保護膜２６
で覆われ保護されている（第４図では保護膜２６が省略
されている）。In the temperature sensor 1', the resistor 22 for the temperature sensing part is connected to the support substrate 2.
It is located on 3. The resistor 22 is made of an i-type a-3i thin film. This resistor 22 has a protective film 26 made of silicon nitride.
(the protective film 26 is omitted in FIG. 4).
対となる抵抗検出用電極２４．２４′は、第５図にみる
ように、ａ−３ｉ薄膜の表面側と裏面側に分かれて形成
されている。As shown in FIG. 5, the paired resistance detection electrodes 24 and 24' are formed separately on the front side and the back side of the a-3i thin film.
支持基板２３は基材Ｆｆ ２３ ａの表面に厚み５００
０人の絶縁物層２３ｂがあり、裏面に厚み５０００人の
絶縁物層２３ｃがある積層構成である。The supporting substrate 23 has a thickness of 500 mm on the surface of the base material Ff 23 a.
It has a laminated structure in which there is an insulator layer 23b with a thickness of 0 and an insulator layer 23c with a thickness of 5000 on the back side.
電極２４．２４′、抵抗体２２は絶縁物層２３ｂ側に設
けられている。抵抗体２２のある位置では、掘り込み２
３ｄが支持基板２３にあって絶縁物層２３ｂ裏側は開放
状態である。そのため、抵抗体２２は熱伝導率が低く薄
い絶縁物層２３ｂのみの上にあり基材Ｎ ２３ ａに対
する熱抵抗が大きく、非常に僅かな温度変化に対し抵抗
体２２が敏感に反応するようになるため、熱応答性は非
常によい。なお、外部回路との接続は、端子部２５．２
５′でなされる。The electrodes 24, 24' and the resistor 22 are provided on the insulator layer 23b side. At the position of the resistor 22, the groove 2
3d is on the support substrate 23, and the back side of the insulating layer 23b is open. Therefore, the resistor 22 has low thermal conductivity and is located only on the thin insulating layer 23b, and has a large thermal resistance to the base material N23a, so that the resistor 22 reacts sensitively to very slight temperature changes. Therefore, the thermal response is very good. Note that the connection to the external circuit is made using the terminal section 25.2.
It is done at 5'.
この感温センサ１′は、抵抗体２２の室温抵抗値約５０
ＭΩ、Ｂ定数が７２００であり、感温部面積は０．５
ｉｌｌ Ｘ ０．５ ｉｎと極く小さいが、測定電流５
μＡでの室温付近の出力感度は２Ｖ／’ｃと頗る良好で
ある。In this temperature sensor 1', the room temperature resistance of the resistor 22 is approximately 50.
MΩ, B constant is 7200, temperature sensing area is 0.5
ill x 0.5 in, which is extremely small, but the measurement current
The output sensitivity at μA near room temperature is 2V/'c, which is extremely good.
続いて、上記感温センサ１′の製造について説明する。Next, manufacturing of the temperature sensor 1' will be explained.
まず、基材層２３ａ用のシリコン（１００） 基板の表
面の掘り込み２３ｄ形成域に厚み５０００人のポリシリ
コン層を設けた後、シリコン基板の両面にプラズマＣＶ
Ｄ法により厚み５０００人の窒化シリコン膜を堆積し、
絶縁物層２３ｂ、２３Ｃを形成した。基材層２３ａはシ
リコン層であるついで、絶縁物層２３ｂ上に電子ビーム
蒸着法により厚み３０００人のクロム膜を積層し、フォ
トリソグラフィ技術を利用し所定パターン以外の部分を
エツチング除去して電極２４を形成した。First, a silicon (100) layer for the base material layer 23a is formed in the region where the groove 23d is formed on the surface of the substrate, and then a polysilicon layer with a thickness of 5,000 layers is formed, and then plasma CVD is applied to both sides of the silicon substrate.
A silicon nitride film with a thickness of 5,000 wafers was deposited using the D method.
Insulator layers 23b and 23C were formed. The base material layer 23a is a silicon layer. Next, a chromium film with a thickness of 3000 mm is laminated on the insulating layer 23b by electron beam evaporation, and the portions other than the predetermined pattern are etched away using photolithography technology to form the electrodes 24. was formed.
電極形成に続き、抵抗体２２を形成する。すなわち、厚
み１０００人のｉ型ａ−８ｉ層をプラズマＣＶＤ法によ
り積層し、ついで、フォトリソグラフィ技術を利用して
所定パターン以外の部分をエツチング除去して、抵抗体
２２を設けた。Following the electrode formation, the resistor 22 is formed. That is, an i-type A-8i layer having a thickness of 1000 layers was laminated by plasma CVD, and then the resistor 22 was provided by etching away the portions other than the predetermined pattern using photolithography.
つぎに、電子ビーム蒸着法により厚み３０００人のアル
ミニウム膜を積層し、フォトリソグラフィ技術を利用し
所定パターン以外の部分をエツチング除去して電極２４
′を形成する。なお、電極２４．２４′は重なり面積が
０．５龍×０．５顛なるようなパターンである。Next, an aluminum film with a thickness of 3000 mm is laminated by electron beam evaporation, and the portions other than the predetermined pattern are etched away using photolithography technology to form the electrodes 24.
′ is formed. Note that the electrodes 24 and 24' have a pattern such that the overlapping area is 0.5 times × 0.5 times.
この後、プラズマＣＶＤ法により厚み５０００人の窒化
シリコン膜を堆積し、保護１＊２６を形成し、保護膜２
６における端子部形成域および掘り込み用窓形成域を覆
う部分、絶縁物層２３ｂにおける掘り込み用窓形成域を
覆う部分をエツチング除去し、掘り込み用窓２９を形成
する。つぎに、リフトオフ法により端子部形成域にコン
タクト用金電極２８．２８′を形成し端子部２５．２５
′を完成する。After that, a silicon nitride film with a thickness of 5,000 layers was deposited by plasma CVD method to form a protection film 1*26, and a protection film 2
A portion of the insulating material layer 23b covering the terminal portion forming area and the digging window forming area is etched away to form a digging window 29. Next, contact gold electrodes 28, 28' are formed in the terminal part formation area by lift-off method, and the terminal parts 25, 25' are formed.
Complete ′.
最後に、異方性エツチングを用い掘り込み用窓２９より
ポリシリコン層およびシリコン部分を掘り進み、掘り込
み２３’ｄを形成すれば、感温センサ１′の完成である
。エソチンダ液は、エチレンジアミン、ピロカテコール
、水酸化カリウムを混合した溶液である。Finally, the polysilicon layer and the silicon portion are dug through the digging window 29 using anisotropic etching to form the trench 23'd, and the temperature sensor 1' is completed. Esotynda liquid is a mixed solution of ethylenediamine, pyrocatechol, and potassium hydroxide.
この発明の感温センサは、上記実施例に限らない。セン
サ構造、製造プロセス、各プロセスでの処理条件、支持
基板材料、電極材料、絶縁物層形成材料、ａ−３ｉ薄膜
のドーピング物質・ドーピング量、ａ−８ｉ薄膜厚みは
必要に応じて適宜に変更される。The temperature sensor of the present invention is not limited to the above embodiments. Change the sensor structure, manufacturing process, processing conditions in each process, support substrate material, electrode material, insulator layer forming material, doping substance and doping amount of the a-3i thin film, and the thickness of the a-8i thin film as necessary. be done.
さらには、ａ−３ｉ薄膜抵抗体の感温部が一つの感温セ
ンサに複数個あってもよい。この場合、一方の感温部を
裏面が開放状態にある絶縁物層上に設け、他方の感温部
を裏面がシリコン層があって開放状態にない絶縁物層上
に設けて、温度変化のあった際に両感温部の昇温特性に
差があって急激な温度変化があった際に両感温部の間に
大きな温度差が生じるようにして、急激な温度変化があ
る場合に両感温部の出力の間に差が生まれ、急激な温度
変化を捉えるに適した構成とするようにすることも有用
である。Furthermore, one temperature sensor may include a plurality of temperature sensing parts of the a-3i thin film resistor. In this case, one temperature-sensing section is provided on an insulating layer whose back side is open, and the other temperature-sensing section is provided on an insulating layer whose back side has a silicon layer and is not open. When there is a difference in the temperature rise characteristics of both temperature sensing parts and there is a sudden temperature change, a large temperature difference will be created between both temperature sensing parts. It is also useful to have a configuration that creates a difference between the outputs of both temperature sensing parts and is suitable for detecting sudden temperature changes.
以上に述べた通り、この発明の感温センサは、ａ−３ｉ
薄膜抵抗体を感温部としているため、応答速度が早く、
微小な温度変化を捉えるのに適しており、しかも、製造
し易いという実用性の高いセンサである。As described above, the temperature sensor of the present invention is a-3i
Since the temperature sensing part is a thin film resistor, the response speed is fast.
It is a highly practical sensor that is suitable for detecting minute temperature changes and is easy to manufacture.
第１図は、この発明にかかる感温センサの一例の要部を
あられす平面図、第２図は、同感温センサの断面図、第
３図は、この発明で用いるａ−３ｉ薄膜の比抵抗の対温
度変化特性をあられすグラフ、第４図は、この発明にか
かる感温センサの他の例の要部をあられず平面図、第５
図は、同感温センサの断面図、第６図は、従来の感温セ
ンサをあられす平面図である。
１．１′・・・感温センサ ２．２２−ａ−３ｉ薄膜
からなる抵抗体
代理人 弁理士 松 本 武 彦
円［糸宍ネ市正書（自発）
平成２年１１月９日
特願平２−２１７７６６号
２、発明の名称
感温センサ
３、補正をする者
事件との関係 特許出願人
住 所 大阪府門真市大字門真１０４８番地名
称（５８３）松下電工株式会社
４、代理人
な
し
６、補正の対象
明細書
７、補正の内容
■ 明細書第１２頁第１０行に「５０ＭΩ」とあるを、
ｒ５ＭΩ」と訂正する。
■ 明細書第１４頁第１１〜１２行に「、水酸化カリウ
ムを混合した溶液である。」とあるを、「の混合液また
は水酸化カリウム水溶液である。
」と訂正する。FIG. 1 is a plan view showing the essential parts of an example of a temperature-sensitive sensor according to the present invention, FIG. 2 is a sectional view of the temperature-sensitive sensor, and FIG. 3 is a comparison diagram of the a-3i thin film used in the present invention. FIG. 4 is a graph showing the temperature change characteristics of resistance, and FIG.
The figure is a cross-sectional view of the same temperature-sensitive sensor, and FIG. 6 is a plan view of a conventional temperature-sensitive sensor. 1.1'...Temperature sensor 2.Resistance agent made of 22-a-3i thin film Patent attorney Takehikoen Matsumoto [Itoshine City Seisho (self-proposal), patent application filed on November 9, 1990 Hei 2-217766 No. 2, Name of the invention Temperature sensor 3, Relationship with the amended case Patent applicant address 1048 Kadoma, Kadoma City, Osaka Name (583) Matsushita Electric Works Co., Ltd. 4, No agent 6. Specification subject to amendment 7. Contents of amendment ■ The statement "50 MΩ" on page 12, line 10 of the specification,
r5MΩ” is corrected. (1) In lines 11 and 12 of page 14 of the specification, the phrase ``It is a mixed solution of potassium hydroxide.'' is corrected to ``It is a mixture of or an aqueous solution of potassium hydroxide.''
Claims (1)
する感温センサにおいて、前記抵抗体がアモルファスシ
リコン薄膜からなることを特徴とする感温センサ。 ２ 対となる抵抗検出用電極が、アモルファスシリコン
薄膜の一側面において所定の間隔をあけて形成されてい
る請求項１記載の感温センサ。 ３ 対となる抵抗検出用電極が、アモルファスシリコン
薄膜の表面側と裏面側にそれぞれ分かれて形成されてい
る請求項１記載の感温センサ。[Scope of Claims] 1. A temperature-sensitive sensor whose temperature-sensing portion is a resistor whose resistance value changes with temperature changes, characterized in that the resistor is made of an amorphous silicon thin film. 2. The temperature sensor according to claim 1, wherein two pairs of resistance detection electrodes are formed on one side of the amorphous silicon thin film at a predetermined interval. 3. The temperature sensor according to claim 1, wherein the pair of resistance detection electrodes is formed separately on the front side and the back side of the amorphous silicon thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21776690A JPH0499934A (en) | 1990-08-18 | 1990-08-18 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21776690A JPH0499934A (en) | 1990-08-18 | 1990-08-18 | Temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499934A true JPH0499934A (en) | 1992-03-31 |
Family
ID=16709400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21776690A Pending JPH0499934A (en) | 1990-08-18 | 1990-08-18 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499934A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109722B2 (en) | 2004-06-10 | 2006-09-19 | International Business Machines Corporation | Apparatus and method for PCB smoke and burn detection and prevention |
| CN104048777A (en) * | 2014-06-24 | 2014-09-17 | 中国东方电气集团有限公司 | Temperature value and resistance value conversion method for NTC-type thermistor |
-
1990
- 1990-08-18 JP JP21776690A patent/JPH0499934A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109722B2 (en) | 2004-06-10 | 2006-09-19 | International Business Machines Corporation | Apparatus and method for PCB smoke and burn detection and prevention |
| CN104048777A (en) * | 2014-06-24 | 2014-09-17 | 中国东方电气集团有限公司 | Temperature value and resistance value conversion method for NTC-type thermistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3542614B2 (en) | Temperature sensor and method for manufacturing the temperature sensor | |
| US3758830A (en) | Transducer formed in peripherally supported thin semiconductor web | |
| AU603918B2 (en) | Mass air flow sensors | |
| CN113049053B (en) | High-performance MEMS flow sensor and preparation method thereof | |
| KR20010087155A (en) | Thermal type air flow sensor and control system for an internal combustion engine | |
| CN214748203U (en) | High-performance MEMS flow sensor | |
| JPH0590011A (en) | Thermosensitive resistor and its manufacture | |
| JPH0499934A (en) | Temperature sensor | |
| JP2004503743A (en) | Microstructured temperature sensor | |
| JPH0712658A (en) | Combination sensor comprising silicon | |
| JP3030337B2 (en) | Cryogenic thermometer | |
| JP2952379B2 (en) | Temperature sensing device | |
| KR100362010B1 (en) | Fabrication method of thermal microflow sensor | |
| JP2577546B2 (en) | Thermocouple element and its manufacturing method | |
| JPH03274708A (en) | Heat sensitive device | |
| JP2001249040A (en) | Fluid detecting sensor and its manufacturing method | |
| KR970006040B1 (en) | Sensor manufacturing method | |
| JPS58100472A (en) | Temperature sensor and manufacture thereof | |
| JPH0337534A (en) | Semiconductor strain detecting apparatus | |
| JP2619735B2 (en) | Heat flow sensor | |
| JPS62207917A (en) | Vibration and acceleration sensor | |
| JPH07162018A (en) | Semiconductor pressure sensor | |
| JPH0992845A (en) | Semiconductor device | |
| JP2858156B2 (en) | Temperature sensor | |
| JPH01301120A (en) | Semiconductor flow velocity sensor |