JPH0499379A - Color solid-state image sensor - Google Patents
Color solid-state image sensorInfo
- Publication number
- JPH0499379A JPH0499379A JP2217891A JP21789190A JPH0499379A JP H0499379 A JPH0499379 A JP H0499379A JP 2217891 A JP2217891 A JP 2217891A JP 21789190 A JP21789190 A JP 21789190A JP H0499379 A JPH0499379 A JP H0499379A
- Authority
- JP
- Japan
- Prior art keywords
- light
- color
- image sensor
- state image
- color solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 2
- 239000003086 colorant Substances 0.000 abstract description 11
- 238000000926 separation method Methods 0.000 abstract description 6
- 239000002861 polymer material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 phosphorus Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、カラー固体撮像素子に関し、さらに詳しく
は、同一半導体基板の素子形成領域上に複数の受光素子
を選択的に形成させ、当該各受光素子によって入射光を
波長毎に受光するカラー固体撮像素子の構成において、
各受光素子にそれぞれ対応する色フィルタを付帯させず
に、個々の素子自体に色フイルタ作用を与え得るように
しだ受光素子構造の改良に係るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a color solid-state image sensor, and more specifically, a plurality of light receiving elements are selectively formed on the element formation region of the same semiconductor substrate, and each of the light receiving elements is In the configuration of a color solid-state image sensor in which a light receiving element receives incident light for each wavelength,
This invention relates to an improvement in the structure of a light-receiving element so that a color filter effect can be applied to each element itself without attaching a corresponding color filter to each light-receiving element.
従来例によるこの種のカラー固体撮像素子として、こＳ
では、特公昭５２−１７３７５号公報に開示された方法
により製造されるカラー固体撮像素子の概要構成を第３
図に模式的に示す。As a conventional color solid-state image sensor of this type, this S
Now, the general structure of a color solid-state image sensor manufactured by the method disclosed in Japanese Patent Publication No. 52-17375 will be explained in the third section.
Schematically shown in the figure.
すなわち、第３図に示す従来のカラー固体撮像素子の構
成において、符号１はｐ型半導体基板であり、２，３．
４は当該半導体基板ｌの主面上にｎ型不純物を選択的に
拡散形成して構成されるそれぞれに三原色、つまり、青
色、緑色、および赤色対応の第１ないし第３の各受光素
子、５，６．７はこれらの各受光素子２，３．４の個々
に対応して形成されるそれぞれに色フィルタ、８，９は
これらの各色フィルタ５．６．７間を隔てる透明高分子
材料を用いた汚染防止膜、１０はこれらの表面部を覆う
同様に透明高分子材料を用いた表面保護膜である。That is, in the configuration of the conventional color solid-state image sensor shown in FIG. 3, numeral 1 is a p-type semiconductor substrate, 2, 3, .
Reference numeral 4 denotes first to third light-receiving elements corresponding to the three primary colors, that is, blue, green, and red, which are formed by selectively diffusing n-type impurities on the main surface of the semiconductor substrate l; 5; , 6.7 are color filters formed corresponding to each of these light receiving elements 2, 3.4, and 8, 9 are transparent polymer materials separating the color filters 5.6.7. The pollution prevention film 10 used is a surface protection film similarly made of a transparent polymer material and covering these surfaces.
しかして、当該カラー固体撮像素子の製造は、まず、ｐ
型半導体基板ｌの各受光素子形成領域に対応する主面上
にあって、リソグラフィー法により当該各受光素子形成
領域部分を開口したフォトレジスト層を形成した上で、
ｎ型不純物イオン例えば、リンなどをイオン注入し、か
つ拡散処理して第１ないし第３の各受光素子２．３．４
をそれぞれ選択的に形成する。However, in manufacturing the color solid-state image sensor, first, p
After forming a photoresist layer on the main surface corresponding to each light-receiving element forming region of the type semiconductor substrate l and having openings in the respective light-receiving element forming regions by a lithography method,
Each of the first to third light receiving elements 2.3.4 is formed by implanting n-type impurity ions, such as phosphorus, and performing a diffusion process.
are selectively formed.
ついで、前記各受光素子２．３．４を含む半導体基板】
上に感光性を有する被染色性高分子材料９例えば、重ク
ロム酸アンモニウム含有のゼラチンカゼインなどを塗布
し、かつ第１の受光素子２の部分対応にパターニングし
た後、染色により１色目１例えば、青色対応の色フィル
タ５を選択的に形成すると共に、当該色フィルタ５を透
明高分子材料からなる汚染防止膜８で被覆しておき、ま
た同様に、第２の受光素子３の部分対応に２色目。Next, a semiconductor substrate including each of the light receiving elements 2.3.4]
After coating a photosensitive dyeable polymeric material 9, for example, gelatin casein containing ammonium dichromate, and patterning it in correspondence with the portion of the first light-receiving element 2, a first color 1, for example, is dyed. A color filter 5 corresponding to blue is selectively formed, and the color filter 5 is coated with a contamination prevention film 8 made of a transparent polymer material. Amorous eyes.
例えば、緑色対応の色フィルタ６を選択的に形成して、
かつ汚染防止膜９で被覆し、さらに、第３の受光素子４
の部分対応に３色目１例えば、赤色対応の色フィルタ７
を選択的に形成し、最後に、これらを透明高分子材料か
らなる表面保護膜１０により被覆して保護するのである
。For example, by selectively forming a color filter 6 corresponding to green,
and is coated with a contamination prevention film 9, and is further coated with a third light receiving element 4.
For example, the third color 1 corresponds to the part of the color filter 7 corresponding to red.
are selectively formed, and finally, these are covered and protected with a surface protective film 10 made of a transparent polymer material.
従って、このように構成された固体撮像素子では、表面
保護膜ｌＯ側から入射される光を、第１ないし第３の各
受光素子２．３．４に対応する各色フィルタ５，６．７
によって、当該光の波長毎にそれぞれ選択的に透過させ
て色分離を行なった上で、各受光素子２．３．４に受光
させることにより、それぞれの各受光素子２，３．４で
発生した電荷が、各色フィルタ５．６．７による色出力
として取り扱われる。Therefore, in the solid-state image sensor configured in this way, the light incident from the surface protection film IO side is filtered through each color filter 5, 6.7 corresponding to each of the first to third light receiving elements 2.3.4.
By selectively transmitting each wavelength of the light and performing color separation, the light is received by each light receiving element 2.3.4. The charge is treated as a color output by each color filter 5.6.7.
［発明が解決しようとする課題］
しかしながら、前記のように構成される従来のカラー固
体撮像素子の場合、三原色対応の第１ないし第３の各受
光素子２．３．４に対しては、これらのそれぞれに対応
する各光波長毎の色フィルタ５゜６．７を形成する必要
があって、各色フィルタ５，６７の相互間で混色を生ず
る慣れがあり、また、これらの各色フィルタ５．６．７
を得るための感光性の被染色性高分子材料についても、
これが通常のレジストに比較して解像性が劣ることから
、必然的に各受光素子２，３．４での相互間の分離幅が
、各色フィルタ５，６．７の解像度によって制限される
ことになるという問題点がある。[Problems to be Solved by the Invention] However, in the case of the conventional color solid-state image sensor configured as described above, these It is necessary to form color filters 5.6.7 for each light wavelength corresponding to each of the color filters 5.6. .7
Regarding photosensitive dyeable polymeric materials to obtain
Since this has inferior resolution compared to a normal resist, the separation width between each light receiving element 2, 3.4 is inevitably limited by the resolution of each color filter 5, 6.7. There is a problem with becoming.
この発明は、従来のこのような問題点を解消するために
なされたもので、その目的とするところは、各色対応の
色フィルタを形成せずに色分離し得て混色がなく、高解
像度化に優れた特長を発揮し得るようにした。この種の
カラー固体撮像素子を提供することである。This invention was made to solve these conventional problems, and its purpose is to be able to separate colors without forming color filters for each color, eliminate color mixture, and achieve high resolution. This allows it to exhibit excellent features. An object of the present invention is to provide a color solid-state image sensor of this type.
〔課題を解決するための手段］
前記目的を達成するために、この発明に係るカラー固体
撮像素子は、三原色対応の第１ないし第３の各受光素子
の形成時における不純物イオンの注入条件を変え、これ
らの第１ないし第３の各受光素子、ひいては、各色対応
の受光素子毎に形成深さを異ならせてそれぞれに色フイ
ルタ作用を得られるようにし、従来のような第１ないし
第３の各受光素子に対応するそれぞれの各色フィルタを
省略し得るようにしたものである。[Means for Solving the Problems] In order to achieve the above object, the color solid-state imaging device according to the present invention changes the conditions for implanting impurity ions when forming each of the first to third light receiving elements corresponding to the three primary colors. , the formation depth is made different for each of these first to third light receiving elements, and furthermore, for each light receiving element corresponding to each color, so that a color filter effect can be obtained for each, and the first to third light receiving elements as in the conventional method are It is possible to omit the respective color filters corresponding to each light receiving element.
すなわち、この発明は、入射光を波長毎に受光して検出
するカラー固体撮像素子であって、同一半導体基板の素
子形成領域上に、複数の受光素子を所定間隔で個々独立
して選択的に形成すると共に、これらの各受光素子の形
成深さを複数種類に亘って変え、各種類毎に異なる波長
の光を受光し得るようにしたことを特徴とするカラー固
体撮像素子である。That is, the present invention is a color solid-state image sensor that receives and detects incident light for each wavelength, in which a plurality of light receiving elements are individually and selectively arranged at predetermined intervals on the element formation area of the same semiconductor substrate. This is a color solid-state image sensing device characterized in that the formation depth of each of these light-receiving elements is varied over a plurality of types so that each type can receive light of a different wavelength.
［イ乍 用］
従って、この発明のカラー固体撮像素子では、各受光素
子の形成深さが複数種類に亘って異ならせであるために
、同一の単色光が入射されても、この入射光に基づいて
発生する電荷量が、各種類毎の受光素子によって異なる
ことになり、当該発生電荷量の差異により入射光の色分
離を容易に行ない得るのである。[Usage] Therefore, in the color solid-state image sensor of the present invention, since the formation depth of each light receiving element is different across multiple types, even if the same monochromatic light is incident, the incident light The amount of charge generated based on the light receiving element differs depending on the type of light receiving element, and the difference in the amount of generated charge makes it possible to easily perform color separation of incident light.
［実 施 例］
以下、この発明に係るカラー固体撮像素子の一実施例に
つき、第１図および第２図を参照して詳細に説明する。[Example] Hereinafter, an example of the color solid-state image sensor according to the present invention will be described in detail with reference to FIGS. 1 and 2.
第１図はこの実施例を適用したカラー固体撮像素子の概
要構成を模式的に示す断面図、第２図は同上カラー固体
撮像素子における各受光素子の形成深さと発生電荷量と
の関係を説明するグラフである。FIG. 1 is a cross-sectional view schematically showing the general configuration of a color solid-state image sensor to which this embodiment is applied, and FIG. 2 illustrates the relationship between the formation depth of each light-receiving element and the amount of generated charge in the same color solid-state image sensor. This is a graph.
第１図に示す実施例構成においても、符号１１はｐ型半
導体基板であり、１２，１３，１．４は当該半導体基板
１１上に所定間隔で独立して選択的に埋め込み形成され
た三原色、つまり、青色、緑色、および赤色対応の第１
ないし第３の各受光素子、１５．托、１７はこれらの各
受光素子１２．１３．１４を個々に埋め込むためのそれ
ぞれにｐ゛層である。Also in the embodiment shown in FIG. 1, reference numeral 11 is a p-type semiconductor substrate, and 12, 13, 1.4 are three primary colors which are independently and selectively embedded at predetermined intervals on the semiconductor substrate 11. That is, the first one corresponding to blue, green, and red.
to each third light receiving element, 15. A layer 17 is a P layer for individually embedding each of the light receiving elements 12, 13, and 14.
こＳで、この種のカラー固体撮像素子に入射される可視
光は、その光波長によってそれぞれに青色、緑色、およ
び赤色の光に区分されるが、第１ないし第３の各受光素
子の基板表面からの形成深さと、それぞれの各色対応の
電荷発生量との間にあって、特に著るしく強（は現象さ
れないが、ある程度までの範囲内で、第２図に示すよう
な関係がある。In this S, the visible light incident on this type of color solid-state image sensor is classified into blue, green, and red light depending on the wavelength of the light. There is a relationship between the formation depth from the surface and the amount of charge generated for each color, as shown in FIG. 2, which is particularly strong (although not particularly pronounced, within a certain range).
すなわち、前記半導体基板１１の主面に対して、第２図
に示すように、例えば、第３の受光素子１４（赤色光に
対応）の形成深さをＡ−Ｂ、第２の受光素子１３（緑色
光に対応）の形成深さをＢ−Ｃ，第３の受光素子１２（
青色光に対応）の形成深さをＣ−Ｄの範囲内にあるよう
に選択形成した場合にあって、これらの各受光素子１２
．１３．１４から読み出される発生電荷量Ｑ、、Ｑ２．
Ｑ３ば、深さＸの地点で発生する電荷量につき、赤をｒ
ｔｘ＋ ＋緑をｇ０３．青をｂＬｘ＋とすると、次のよ
うになる。That is, with respect to the main surface of the semiconductor substrate 11, as shown in FIG. (corresponding to green light), the formation depth of the third light receiving element 12 (corresponding to green light) is B-C.
In the case where the formation depth of the light-receiving elements (corresponding to blue light) is selected to be within the range C-D, each of these light-receiving elements 12
．． 13. Generated charge amount Q, , Q2. read from 14.
Q3: For the amount of charge generated at depth X, red is r.
tx+ +green g03. Letting blue be bLx+, it will be as follows.
Ｑ Ｉ＝ Ｓｉｒ ｆｘｌ ｄｘ
Ｑ２＝ （二ｒ＋ｘ＋ｄＸ＋ ’ｒ、’ｇＬｘ＋ｄＸ０
１ ＝ １．”ｒ ｌｘｌ ｄｘ＋ ）、’ｇ ｆｘｌ
ｄｘ＋ ｓ、Ｂｂ （ｘｌ ｄｘそして、入射光によ
って発生し得る全電荷量につき、赤、緑、青のそれぞれ
をｒ、 ｇ、 ｂとすると、ｒ＝Ｉ’、ｒ ｌ ｘ ｌ
ｄＸ＋ ｇ ” ’Ｓｓ ｇ ｌｘ ｌ ｄＸ＋ ｂ
” （Ａ ｂ ｌ ｘ ｌｄＸであり、またこＳで、
となり、
ＩＢ□ｘ）ｄｘ
ｉ二ｒイｘＩｄｘ
は、面積比であるので一定となる。Q I= Sir fxl dx Q2= (2r+x+dX+ 'r,'gLx+dX0
1 = 1. ”r lxl dx+),'g fxl
dx+ s, Bb (xl dx And, for the total amount of charge that can be generated by the incident light, if red, green, and blue are r, g, and b, respectively, then r=I', r l x l
dX+ g ” 'Ss g lx l dX+ b
” (A b l x ld
よって、Ｑ、か
らｒの値が求められ、かつ第２図の面積比に従ってＳ：
ｒ ｔ ｘ ＋ ｄ ｘが求められるため、同様にし
て、Ｑ２からｇの値が求められ、Ｑ３からｂの値が求め
られるもので、このような演算結果によって、入射光を
赤、緑、青の３色に分離し得るのである。Therefore, the value of r is determined from Q, and S:
Since r t x + d It can be separated into three colors.
なお、前記実施例においては、それぞれに形成深さの異
なる各受光素子によって、青、緑、赤の３色に色分離す
る場合について述べたが、このような３色にのみ限定さ
れず、２色以上であれば、同様に、各種類毎の受光素子
の形成深さを異ならせるように調整することで容易に可
能である。但し、よりの以上多色にするときは、その製
造工程が複雑化する可能性が増す。In the above embodiment, a case was described in which the colors are separated into three colors, blue, green, and red, by the light receiving elements each having a different formation depth, but the separation is not limited to only these three colors; If it is more than one color, it can be easily achieved by adjusting the formation depth of each type of light-receiving element to be different. However, if the number of colors is more than that, there is a possibility that the manufacturing process will become complicated.
また、この実施例の場合、各受光素子上にそれぞれｐ゛
層を形成するようにしているが、必ずしも形成しな（と
もよ（、この場合には、Ｑ、 −０２によりにｒ ｆｘ
ｌ ｄｘ、 Ｑ２ Ｑ３によりＳ：ｒｌｘｌ ｄｘ
＋（、ｇ ｆｘｌ ｄｘを求める演算が必要になる。In addition, in the case of this embodiment, a p layer is formed on each light receiving element, but it is not necessarily formed (in this case, the r fx layer is formed by Q, -02).
l dx, Q2 Q3 S: rlxl dx
+(, g fxl dx is required.
さらに、この実施例では、第２図のＤ点が赤色光（可視
光）の立上り点になっているが、０点以上の深さであれ
ば、演算によっても色分離が可能でＩ、’ｒ 、ｘｌｄ
ｘ／ （’、ｒ ｆｘｌｄｘと（’、ｒ＋ｘ＋ｄＸ＋
（’、ｇ（＋＋＋ｄＸが分かっておればよく、かつＡ点
の設定についても同様でＢ点を越えなければよい。Furthermore, in this embodiment, point D in FIG. 2 is the rising point of red light (visible light), but if the depth is greater than or equal to 0, color separation is possible by calculation. r,xld
x/ (', r fxldx and (', r+x+dX+
(', g(+++dX only needs to be known, and the same applies to the setting of point A, as long as it does not exceed point B.
以上詳述したように、この発明によれば、入射光を波長
毎に受光して検出するカラー固体撮像素子において、同
一の半導体基板の素子形成領域上に、形成深さの異なる
複数の受光素子を所定間隔で選択的に形成させ、これに
よって各受光素子に対応する色フィルタを省略するよう
にしたので、同一の単色光が入射されても、この入射光
に基づいて各種類毎の受光素子に発生する電荷量が異な
ることになって、発生電荷量の差異により入射光の色分
離を容易に行ない得るのであり、各受光素子毎に色フィ
ルタを付帯させていた従来構成の場合でのように、色フ
イルタ間におけろ混色が解消され、かつ各色フイルタ形
成のために生じていた解像度などの制限がなくなること
から、設計上での自由度の大きい装置構成が得られるな
どの利点を有し、しかも、構造的にも比較的簡単で、容
易に実施できるなどの優れた特長を有するものである。As detailed above, according to the present invention, in a color solid-state image sensor that receives and detects incident light for each wavelength, a plurality of light receiving elements with different formation depths are formed on the element forming area of the same semiconductor substrate. are selectively formed at predetermined intervals, thereby omitting the color filters corresponding to each light receiving element, so even if the same monochromatic light is incident, each type of light receiving element is selectively formed based on this incident light. The difference in the amount of charge generated makes it easy to separate the colors of the incident light, unlike the conventional configuration in which a color filter is attached to each light-receiving element. In addition, color mixing between color filters is eliminated, and there are no restrictions on resolution, etc. that were caused by forming each color filter, so it has the advantage of providing a device configuration with a high degree of freedom in design. Moreover, it has excellent features such as being relatively simple in structure and easy to implement.
第１図はこの発明の一実施例を適用したカラー固体撮像
素子の受光素子部の概要構成を模式的に示す断面図、第
２図は同上カラー固体撮像素子における各受光素子の形
成深さと発生電荷量との関係を説明するグラフであり、
また、第３図は従来例によるカラー固体撮像素子の受光
素子部の概要構成を模式的に示す断面図である。
１１・・・・ｐ型半導体基板、
１２、１３．１４・・・・受光素子、
１．５，１６．１７・・・・ｐ”層。
代理人 大 岩 増 雄
暮隼ＳFIG. 1 is a sectional view schematically showing the general structure of a light receiving element section of a color solid-state image sensor to which an embodiment of the present invention is applied, and FIG. 2 is a sectional view showing the formation depth and occurrence of each light receiving element in the same color solid-state image sensor. This is a graph explaining the relationship with the amount of charge,
Further, FIG. 3 is a sectional view schematically showing the general configuration of a light receiving element section of a color solid-state image sensor according to a conventional example. 11... p-type semiconductor substrate, 12, 13.14... light receiving element, 1.5, 16.17... p'' layer. Agent Masu Oiwa Jun Ogure S
Claims (1)
であって、同一半導体基板の素子形成領域上に、複数の
受光素子を所定間隔で個々独立して選択的に形成すると
共に、これらの各受光素子の形成深さを２種類以上に亘
って変え、各種類毎に異なる波長の光を受光し得るよう
にしたことを特徴とするカラー固体撮像素子。A color solid-state image sensor that receives and detects incident light for each wavelength, in which a plurality of light-receiving elements are individually and selectively formed at predetermined intervals on the element-forming region of the same semiconductor substrate. 1. A color solid-state imaging device characterized in that the formation depth of each light-receiving element is varied over two or more types so that each type can receive light of a different wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217891A JPH0499379A (en) | 1990-08-17 | 1990-08-17 | Color solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217891A JPH0499379A (en) | 1990-08-17 | 1990-08-17 | Color solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499379A true JPH0499379A (en) | 1992-03-31 |
Family
ID=16711385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2217891A Pending JPH0499379A (en) | 1990-08-17 | 1990-08-17 | Color solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499379A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040036087A (en) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | CMOS image sensor having different depth of photodiode by Wavelength of light |
| JP2006245264A (en) * | 2005-03-03 | 2006-09-14 | New Japan Radio Co Ltd | Integrated circuit equipped with semiconductor light receiving element |
| CN101834196A (en) * | 2009-03-12 | 2010-09-15 | 索尼公司 | Solid-state image pickup apparatus and manufacture method thereof and image pick-up device |
| CN108389872A (en) * | 2018-03-16 | 2018-08-10 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
-
1990
- 1990-08-17 JP JP2217891A patent/JPH0499379A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040036087A (en) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | CMOS image sensor having different depth of photodiode by Wavelength of light |
| JP2006245264A (en) * | 2005-03-03 | 2006-09-14 | New Japan Radio Co Ltd | Integrated circuit equipped with semiconductor light receiving element |
| CN101834196A (en) * | 2009-03-12 | 2010-09-15 | 索尼公司 | Solid-state image pickup apparatus and manufacture method thereof and image pick-up device |
| US20100230578A1 (en) * | 2009-03-12 | 2010-09-16 | Sony Corporation | Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus |
| US8492695B2 (en) * | 2009-03-12 | 2013-07-23 | Sony Corporation | Solid-state image pickup apparatus having improved spectral balance |
| US9231016B2 (en) | 2009-03-12 | 2016-01-05 | Sony Corporation | Method of manufacturing a solid-state image pickup apparatus improved spectral balance |
| CN108389872A (en) * | 2018-03-16 | 2018-08-10 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
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