JPH0499169A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH0499169A JPH0499169A JP20547490A JP20547490A JPH0499169A JP H0499169 A JPH0499169 A JP H0499169A JP 20547490 A JP20547490 A JP 20547490A JP 20547490 A JP20547490 A JP 20547490A JP H0499169 A JPH0499169 A JP H0499169A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film forming
- filament
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000005684 electric field Effects 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 50
- 238000001704 evaporation Methods 0.000 claims description 42
- 230000008020 evaporation Effects 0.000 claims description 40
- 239000000126 substance Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 5
- 239000011364 vaporized material Substances 0.000 abstract description 3
- 230000008016 vaporization Effects 0.000 abstract 2
- 238000009834 vaporization Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 230000009257 reactivity Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＣＶＤ法（化学的蒸着法）の長所である強い
反応性と、ＰＶＤ法（物理的蒸着法）の長所である高真
空中での成膜とを同時に実現することができ、且つ、大
面積基板上への均一な薄膜形成をも可能とする薄膜形成
装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is characterized by strong reactivity, which is an advantage of the CVD method (chemical vapor deposition method), and high vacuum deposition, which is an advantage of the PVD method (physical vapor deposition method). The present invention relates to a thin film forming apparatus that can simultaneously realize film formation and uniform thin film formation on a large-area substrate.
従来、被薄膜形成基板（以下、基板と称する）上に薄膜
を形成する薄膜形成装置としては、ＣＶＤ法やＰＶＤ法
などを利用したものが良く知られており、ＣＶＤ法によ
る装置は反応性が強く、ＰＶＤ法による装置は高真空中
において緻密な強い薄膜を形成できるなどの長所を有し
ている。Conventionally, as thin film forming apparatuses for forming thin films on thin film forming substrates (hereinafter referred to as substrates), those using CVD methods, PVD methods, etc. are well known. A device using the PVD method has the advantage of being able to form a dense, strong thin film in a high vacuum.
これら、ＣＶＤ法やＰＶＤ法などを利用した薄膜形成装
置としては、従来より種々のものが提案されており、そ
の方法も極めて多岐にわたっている。Various types of thin film forming apparatuses using CVD methods, PVD methods, etc. have been proposed in the past, and the methods thereof are also extremely diverse.
しかし、従来の薄膜形成装置にあっては、形成された薄
膜と基板との密着性が弱かったり、あるいは、耐熱性の
無い基板上への薄膜形成が困難であったり、また、大面
積基板上に一様に薄膜を形成する場合に、均一な薄膜形
成が困難であったりする等の問題があった。However, with conventional thin film forming equipment, the adhesion between the formed thin film and the substrate is weak, or it is difficult to form a thin film on a substrate with no heat resistance, or it is difficult to form a thin film on a substrate with a large area. When forming a thin film uniformly on a substrate, there have been problems such as difficulty in forming a uniform thin film.
そこで、これらの問題を解決するため、本出願人は先に
、薄膜形成装置として、基板を蒸発源に対向させて対向
電極に保持し、この対向電極と蒸発源との間にグリッド
を配置すると共に、このグリッドと蒸発源との間に熱電
子発生用のフィラメントを配し、上記グリッドをフィラ
メントに対して正電位にして薄膜形成を行なう装置を提
案した（特開昭５９−８９７６３号公報参照）。Therefore, in order to solve these problems, the applicant first developed a thin film forming apparatus in which a substrate is held on a counter electrode facing an evaporation source, and a grid is placed between the counter electrode and the evaporation source. At the same time, we proposed an apparatus in which a filament for generating thermionic electrons is arranged between the grid and the evaporation source, and the grid is set at a positive potential with respect to the filament to form a thin film (see Japanese Patent Laid-Open No. 89763/1983). ).
この薄膜形成装置では、蒸発源から蒸発した蒸発物質は
、先ずフィラメントからの熱電子によりイオン化され、
このイオン化された蒸発物質がグリッドを通過すると、
グリッドから対向電極に向かう電界の作用により加速さ
れて被薄膜形成基板に衝突し、基板上に密着性の良い薄
膜が形成されるという特徴を有している。In this thin film forming apparatus, the evaporated substance evaporated from the evaporation source is first ionized by thermionic electrons from the filament.
When this ionized vaporized material passes through the grid,
It has the characteristic that it is accelerated by the action of the electric field directed from the grid toward the counter electrode and collides with the substrate on which the thin film is to be formed, forming a thin film with good adhesion on the substrate.
しかしながら、上記従来の薄膜形成装置では、大面積絶
縁性基板上に薄膜形成する場合、グリッドからの電界の
作用が基板中心部と周辺部とで大きく変化するため、基
板中心部と周辺部において、必ずしも均一な膜厚になら
ないといった問題があった。また、薄膜の物性の面にお
いても必ずしも均一ではなかった。However, in the conventional thin film forming apparatus described above, when forming a thin film on a large-area insulating substrate, the effect of the electric field from the grid changes greatly between the center and the periphery of the substrate. There was a problem that the film thickness was not necessarily uniform. Furthermore, the physical properties of the thin film were not necessarily uniform.
本発明は上記事情に鑑みてなされたものであって、基板
に対して極めて強い密着性をもった薄膜を形成でき、耐
熱性の無いプラスチック等をも基板として用いることが
可能で、尚且つ、大面積基板上への均一な薄膜形成をも
可能とし、さらには、化合物薄膜の形成をも容易とする
新規な薄膜形成装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and it is possible to form a thin film with extremely strong adhesion to a substrate, and it is also possible to use non-heat resistant plastics etc. as a substrate. It is an object of the present invention to provide a novel thin film forming apparatus that enables uniform thin film formation on a large-area substrate and also facilitates the formation of compound thin films.
上記目的を達成するため、本発明の請求項１記載の薄膜
形成装置は、活性ガス若しくは不活性ガスあるいはこれ
ら両者の混合ガスが導入される真空槽と、この真空槽内
において蒸発物質を蒸発させるための蒸発源と、上記真
空槽内において上記蒸発源と対向するように配置された
基板と、上記蒸発源と上記基板との間に配備された熱電
子発生用のフィラメントと、このフィラメントと上記基
板との間に配備され蒸発物質を通過させうるグリッドと
、上記基板の蒸発源と対向する側近傍に配備され蒸発物
質を通過させうる電界分布調節用の補助電極と、真空槽
内に所定の電気的状態を実現するための電源手段と、真
空槽内と上記電源手段とを電気的に連結する導電手段と
を有し、上記フィラメント及び補助電極に対し上記グリ
ッドが正電位となるようにし、且つ、上記基板近傍の電
界分布を調節可能としたことを特徴とする。In order to achieve the above object, the thin film forming apparatus according to claim 1 of the present invention includes a vacuum chamber into which an active gas, an inert gas, or a mixture of both gases is introduced, and an evaporation substance is evaporated in the vacuum chamber. a substrate disposed to face the evaporation source in the vacuum chamber; a filament for generating thermionic electrons disposed between the evaporation source and the substrate; a grid disposed between the substrate and capable of passing the evaporated substance; an auxiliary electrode for electric field distribution adjustment disposed near the side of the substrate facing the evaporation source and capable of passing the evaporated substance; and a predetermined grid in the vacuum chamber. comprising a power supply means for realizing an electrical state and a conductive means for electrically connecting the inside of the vacuum chamber and the power supply means, the grid being at a positive potential with respect to the filament and the auxiliary electrode; Further, the present invention is characterized in that the electric field distribution near the substrate can be adjusted.
また、本発明の請求項２記載の薄膜形成装置は、上記請
求項１記載の薄膜形成装置において、基板近傍にガス導
入を可能にしたことを特徴とする。Further, a thin film forming apparatus according to a second aspect of the present invention is characterized in that, in the thin film forming apparatus according to the first aspect, gas can be introduced into the vicinity of the substrate.
また、本発明の請求項３記載の薄膜形成装置は、上記請
求項１若しくは請求項２記載の薄膜形成装置において、
基板保持を兼ねる対電極を有することを特徴とする。Further, the thin film forming apparatus according to claim 3 of the present invention is the thin film forming apparatus according to claim 1 or 2, which comprises:
It is characterized by having a counter electrode that also serves to hold the substrate.
以下、本発明の薄膜形成装置の構成及び作用について説
明する。Hereinafter, the structure and operation of the thin film forming apparatus of the present invention will be explained.
本発明の請求項１記載の薄膜形成装置は、前述したよう
に、真空槽と、蒸発物質を蒸発させうる蒸発源と、基板
と、補助電極と、フィラメントと、グリッドと、電源手
段と、導電手段とを有する。As described above, the thin film forming apparatus according to claim 1 of the present invention includes a vacuum chamber, an evaporation source capable of evaporating an evaporation substance, a substrate, an auxiliary electrode, a filament, a grid, a power supply means, and a conductive means.
真空槽は、その内部空間に活性ガス、あるいは不活性ガ
ス、若しくは活性ガスと不活性ガスとの混合ガスを導入
しうるようになっており、蒸発源、基板、補助電極、フ
ィラメント、グリッドは真空槽内に配備される。The vacuum chamber is designed so that an active gas, an inert gas, or a mixture of an active gas and an inert gas can be introduced into its internal space, and the evaporation source, substrate, auxiliary electrode, filament, and grid are kept in a vacuum. Deployed inside the tank.
上記基板、蒸発源は、互いに対向するように配備される
。The substrate and the evaporation source are arranged to face each other.
上記グリッドは蒸発物質を通過させうるものであって、
蒸発源と基板の間に介設され、電源手段によりフィラメ
ント及び補助電極に対し正電位にされる。従って、薄膜
形成時には、発生する電界はグリッドからフィラメント
及び補助電極に向かう。The grid is capable of passing evaporated substances,
It is interposed between the evaporation source and the substrate and is brought to a positive potential with respect to the filament and the auxiliary electrode by power supply means. Therefore, during thin film formation, the generated electric field is directed from the grid toward the filament and the auxiliary electrode.
上記補助電極は、基板の蒸発源に対向する側近傍に配備
され、電界分布を調節できるようになっており、且つ蒸
発物質を通過させうる構造になっている。また、補助電
極は適宜の移動手段等により移動可能であり、基板上で
の膜厚むらを無くす構造になっている。The auxiliary electrode is disposed near the side of the substrate facing the evaporation source, and has a structure that allows the electric field distribution to be adjusted and allows the evaporation substance to pass through. Further, the auxiliary electrode can be moved by a suitable moving means, etc., and has a structure that eliminates unevenness in film thickness on the substrate.
上記フィラメントは熱電子発生用であって、蒸発源とグ
リッドの間に配備される。The filament is for thermionic generation and is placed between the evaporation source and the grid.
電源手段は、真空槽内に所定の電気的状態を実現するた
めの手段であり、この電源手段と真空槽内部が導電手段
により電気的に連結される。The power supply means is a means for realizing a predetermined electrical state within the vacuum chamber, and the power supply means and the inside of the vacuum chamber are electrically connected by a conductive means.
次に、請求項２記載の薄膜形成装置においては、基板近
傍へのガス導入手段が設けられており、このガス導入手
段は補助電極の近傍に配備され、基板と補助電極の間に
活性ガス等を導入し、導入ガスのガス溜りを作る構造と
なっている。Next, in the thin film forming apparatus according to claim 2, a gas introduction means near the substrate is provided, and this gas introduction means is arranged near the auxiliary electrode, and the active gas etc. is introduced between the substrate and the auxiliary electrode. The structure is such that a gas reservoir is created for the introduced gas.
また、上記請求項１若しくは請求項２記載の薄膜形成装
置において、基板保持を兼ねる対電極を設けた場合、グ
リッドからの電界は補助電極及び対電極に向い、電界の
均一化がより図れる。Further, in the thin film forming apparatus according to claim 1 or 2, when a counter electrode that also serves as a substrate support is provided, the electric field from the grid is directed toward the auxiliary electrode and the counter electrode, making the electric field more uniform.
以下、本発明の実施例について図面を参照して詳細に説
明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は請求項１記載の発明の一実施例を示す薄膜形成
装置の概略的構成図である。FIG. 1 is a schematic diagram of a thin film forming apparatus showing an embodiment of the invention.
第１図において、符号１はペルジャー、符号２はベース
プレート、符号３はバッキングを夫々示し、ペルジャー
１とベースプレート２はバッキング３により一体化され
て真空槽を構成しており、この真空槽の内部空間には、
符号４で示すような公知の適宜の方法により、活性ガス
、及び／又は不活性ガスを導入できるようになっている
。また、ベースプレート２の中央部に穿設された孔２Ａ
は、図示されない真空系に連結されている。In FIG. 1, reference numeral 1 indicates a Pelger, reference numeral 2 indicates a base plate, and reference numeral 3 indicates a backing. The Pelger 1 and the base plate 2 are integrated by a backing 3 to constitute a vacuum chamber, and the internal space of this vacuum chamber is for,
An active gas and/or an inert gas can be introduced by any suitable known method as indicated by reference numeral 4. In addition, a hole 2A drilled in the center of the base plate 2
is connected to a vacuum system (not shown).
上記ベースプレート２には、真空槽内部の機密性を保ち
、且つベースプレート２との電気的絶縁性を保ちつつ、
支持体を兼ねた電極１０．１１．１２゜１３が配設され
ており、これら電極１０．１１．１２．１３は、真空槽
内部と外側とを電気的に連結するものであって、他の配
線具と共に導電手段を構成している。The base plate 2 has a structure that maintains airtightness inside the vacuum chamber and maintains electrical insulation from the base plate 2.
Electrodes 10.11.12.13 that also serve as supports are provided, and these electrodes 10.11.12.13 electrically connect the inside of the vacuum chamber and the outside. Together with the wiring fittings, it constitutes a conductive means.
上記電極１０．１１．１２．１３の内、符号１２で示す
一対の電極の間には、タングステン、モリブデン、タン
タル等の金属をボート状に形成した、抵抗加熱式の蒸発
源９が支持されている。この蒸発源９の形状は、ボート
状に代えてコイル状、またはルツボ状としてもよい。尚
、このような蒸発源９に代えて電子ビーム蒸発源等、従
来の真空蒸発方式で用いられている蒸発源を適宜使用す
ることができる。Among the electrodes 10, 11, 12, and 13, a resistance heating type evaporation source 9 made of metal such as tungsten, molybdenum, tantalum, etc. formed into a boat shape is supported between a pair of electrodes indicated by reference numeral 12. There is. The shape of the evaporation source 9 may be a coil shape or a crucible shape instead of a boat shape. Note that instead of such evaporation source 9, an evaporation source used in a conventional vacuum evaporation method, such as an electron beam evaporation source, can be used as appropriate.
符号１１で示す一対の電極の間には、タングステン等に
よる熱電子発生用のフィラメント８が支持されており、
このフィラメント８の形状は、複数本のフィラメントを
平行に配列したり、網目状にしたすするなどして、蒸発
ｇ９から蒸発した蒸発物質の粒子の拡がりをカバーする
ように定められている。A filament 8 made of tungsten or the like for generating thermionic electrons is supported between a pair of electrodes indicated by reference numeral 11.
The shape of the filament 8 is determined by arranging a plurality of filaments in parallel or forming a mesh so as to cover the spread of particles of the evaporated substance evaporated from the evaporation g9.
また、電極１３には、グリッド７が支持されており、こ
のグリッド７は、蒸発した蒸発物質を補助電極５及び基
板１００側へ通過させうる様に形状を定めるのであるが
、この例においては網目状である。Further, a grid 7 is supported on the electrode 13, and the shape of the grid 7 is determined so that the evaporated substance can pass through to the auxiliary electrode 5 and the substrate 100 side. It is in a state of
また、電極１０の先端部には、補助電極５が支持され、
蒸発源９側から見ると、この補助電極５の背後に被薄膜
形成基板１００が適宜の支持方法で保持される。この補
助電極５は蒸発源９からの蒸発物質を通過させうる網目
状や短冊状等の形状であり、静止基板上への成膜を行う
場合は回転や振動など、適宜の方法により位置を移動し
、基板上での膜厚むらが起こらないようになっている。Further, an auxiliary electrode 5 is supported at the tip of the electrode 10,
When viewed from the evaporation source 9 side, the thin film forming substrate 100 is held behind the auxiliary electrode 5 by an appropriate supporting method. This auxiliary electrode 5 has a shape such as a mesh or strip shape that allows the evaporation material from the evaporation source 9 to pass through, and when forming a film on a stationary substrate, the position can be moved by an appropriate method such as rotation or vibration. However, unevenness in film thickness on the substrate is prevented.
尚、第４図は請求項２記載の発明の一実施例を示す薄膜
形成装置の概略的構成図であるが、この実施例のように
、補助電極５と基板１００との間に、符号４″で示すよ
うなガス導入手段を設けても良く、この場合には、ガス
導入手段４″より活性ガスを導入して、補助電極５と基
板１００との間にガス溜りを作ることができ、より反応
性を高めることができる。Incidentally, FIG. 4 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment of the invention as claimed in claim 2, and as in this embodiment, there is a numeral 4 between the auxiliary electrode 5 and the substrate 100. A gas introducing means as shown by `` may be provided, and in this case, active gas can be introduced from the gas introducing means 4'' to create a gas reservoir between the auxiliary electrode 5 and the substrate 100, The reactivity can be further increased.
また、第１図若しくは第４図の装置において。Also, in the apparatus shown in FIG. 1 or FIG.
第２図（ａ）、第５図（ａ）で示すように基板の保持に
回転式基板ホルダーを用いて基板を回転したり、あるい
は第２図（ｂ）第５図（ｂ）のように巻き取り装置を用
いて基板位置を移動可能とした場合には、前述の補助電
極５は静止状態でも良い。As shown in Fig. 2(a) and Fig. 5(a), a rotary substrate holder is used to hold the substrate and the substrate is rotated, or as shown in Fig. 2(b) and Fig. 5(b). When the substrate position can be moved using a winding device, the above-mentioned auxiliary electrode 5 may be in a stationary state.
尚、第１図若しくは第４図の装置において、電極１０は
、図においてはそのまま接地されているが。In the apparatus shown in FIG. 1 or 4, the electrode 10 is shown as being grounded.
この間に直流電源をいれて補助電極５にバイアスをかけ
ても良い。During this time, the auxiliary electrode 5 may be biased by turning on a DC power source.
さて、蒸発源９を支持する電極１２は、加熱用の直流電
源２０に接続されているが、この電源は直流電源に代え
て交流電源にしても良く、直流電源の場合には、正負の
向きはどちらの場合でも良い。Now, the electrode 12 supporting the evaporation source 9 is connected to a DC power source 20 for heating, but this power source may be an AC power source instead of the DC power source. is fine in either case.
フィラメント８を支持する電極１１は電源２２に接続さ
れているが、電源２２は上記電源２０と同様に、交流、
直流のどちらを用いても良い。The electrode 11 supporting the filament 8 is connected to a power source 22, which, like the power source 20 described above, is powered by an alternating current,
Either direct current or direct current may be used.
電極１３は、直流電圧電源２１の正極側に接続され、同
電源の負側は、図示の例では電極１１の片側、及び電極
１０に接続される。従って、グリッド７はフィラメント
８、及び補助電極５に対して正電位となり、グリッド７
とフィラメント８、及び補助電極５の間では、電界はグ
リッド７からフィラメント８、及び補助電極５へと向か
う。The electrode 13 is connected to the positive side of a DC voltage power source 21, and the negative side of the power source is connected to one side of the electrode 11 and the electrode 10 in the illustrated example. Therefore, the grid 7 has a positive potential with respect to the filament 8 and the auxiliary electrode 5, and the grid 7
and the filament 8 and the auxiliary electrode 5, the electric field is directed from the grid 7 to the filament 8 and the auxiliary electrode 5.
ここで、図示の例における電源２０，２１．２２の片側
はそのまま接地されているが、この間に直流電源を入れ
て蒸発源９、及び／又はフィラメント８にバイアスをか
けても良い。尚、各電極の電位配分においては、減衰器
等を用いて直流電源の数を減らしても良く、また図中に
おける接地も必ずしも必要ではない。Here, in the illustrated example, one side of the power sources 20, 21, and 22 is grounded as is, but during this time, a DC power source may be turned on to bias the evaporation source 9 and/or the filament 8. In the potential distribution of each electrode, the number of DC power sources may be reduced by using an attenuator, and the grounding shown in the figure is not necessarily required.
さて、以上の構成からなる薄膜形成装置では、フィラメ
ント加熱用電源２２とグリッド用直流電源２１の調節に
より安定なプラズマ状態を作ることができる。また、補
助電極５を用いることにより、グリッド７から補助電極
５に向かう電界が形成され、イオンの飛行方向、及びイ
オン電流密度を制御することができ、大面積基板上に均
一な薄膜を安定に供給することができる。さらに、第４
図に示す構成の装置のように、基板近傍へのガス導入手
段４′を設けた場合は、反応性成膜を行う場合に、基板
近傍のガス濃度が高くなっているため反応も進みやすく
なる。Now, in the thin film forming apparatus having the above configuration, a stable plasma state can be created by adjusting the filament heating power source 22 and the grid DC power source 21. Furthermore, by using the auxiliary electrode 5, an electric field is formed from the grid 7 toward the auxiliary electrode 5, making it possible to control the flight direction of ions and the ion current density, thereby stably forming a uniform thin film on a large-area substrate. can be supplied. Furthermore, the fourth
When a gas introduction means 4' is provided near the substrate, as in the apparatus with the configuration shown in the figure, when performing reactive film formation, the reaction progresses more easily because the gas concentration near the substrate is high. .
尚、第１図若しくは第４図の構成の装置においては、第
３図若しくは第６図に示すように、補助電極５の背後に
基板保持を兼ねた対電極６を設置することもできる。こ
の場合、グリッド７からの電界は対電極６に向かうが、
保持している基板が大型絶縁性の基板の場合には、基板
中心部への電界が周辺部と比較して弱まるため、それを
補助する形で補助電極側の形状を定める。これには電界
の均一化を図る効果の他、通常、蒸発源９と基板１００
表面との距離が一番近い基板中心部の膜厚は周辺部と比
較して厚くなる傾向があるため、補助電極５の開口形状
、及び面積を補助電極内で変化させることにより、膜厚
の均一化を図る効果がある。さらに、第６図に示す装置
の場合には、基板１００と補助電極５の間にガス溜りが
作られるため、膜厚の均−化及び反応性をより高めるこ
とができる。In the apparatus having the structure shown in FIG. 1 or 4, a counter electrode 6 which also serves as a substrate support may be installed behind the auxiliary electrode 5, as shown in FIG. 3 or 6. In this case, the electric field from the grid 7 is directed toward the counter electrode 6, but
When the substrate being held is a large insulating substrate, the electric field applied to the center of the substrate is weaker than that to the periphery, so the shape of the auxiliary electrode is determined to assist this. In addition to the effect of making the electric field uniform, this usually has the effect of making the evaporation source 9 and the substrate 100
The film thickness at the center of the substrate, which is closest to the surface, tends to be thicker than at the periphery, so by changing the opening shape and area of the auxiliary electrode 5 within the auxiliary electrode, the film thickness can be reduced. This has the effect of achieving uniformity. Furthermore, in the case of the apparatus shown in FIG. 6, a gas reservoir is created between the substrate 100 and the auxiliary electrode 5, so that the film thickness can be made more uniform and the reactivity can be further improved.
尚、第３図、第６図では、補助電極５と対電極６の電位
は同等になっているが、電極１０．１４のどちらか、あ
るいは両方に夫々のバイアスをかけ、電位差を与えても
良い。In FIGS. 3 and 6, the potentials of the auxiliary electrode 5 and the counter electrode 6 are the same, but even if one or both of the electrodes 10, 14 are biased and a potential difference is applied, good.
また、第４図、第６図に示す薄膜形成装置においては、
符号４′で示すガス導入口から活性ガスを導入すると同
時に、符号４で示す公知の適宜の方法によって不活性ガ
ス、あるいは活性ガスと不活性ガスの混合ガスを導入し
て、反応性をより高めることができ、化合物薄膜の形成
がより容易となる
尚、第１図、第３図、第４図、第６図に示す夫々の構成
の薄膜形成装置においては、実際には、前述の電気的接
続は、導電手段の一部を構成するスイッチ類を含み、こ
れらのスイッチ操作により蒸着プロセスを実行するので
あるが、これらのスインチ類は図示を省略されている。Furthermore, in the thin film forming apparatus shown in FIGS. 4 and 6,
At the same time as an active gas is introduced from the gas inlet port 4', an inert gas or a mixed gas of an active gas and an inert gas is introduced by a known appropriate method shown as 4 to further enhance the reactivity. However, in the thin film forming apparatuses having the configurations shown in FIGS. 1, 3, 4, and 6, the above-mentioned electrical The connections include switches forming part of the conductive means, and the vapor deposition process is executed by operating these switches, but these switches are not shown.
以下、上記構成からなる薄膜形成装置による薄膜形成に
ついて説明するが、ここでは、第１図に示す構成の薄膜
形成装置による薄膜形成を例として説明する。Thin film formation using the thin film forming apparatus having the above configuration will be described below. Here, thin film formation using the thin film forming apparatus having the configuration shown in FIG. 1 will be described as an example.
先ず、ペルジャー１を開いて、被薄膜形成基板１００を
図示の如く基板ホルダー等（第３図や第６図に示す装置
のように対電極６を有する場合は対電極６）に保持させ
ると共に、蒸発物質を蒸発源９に保持させる。尚、蒸発
物質は、どのような薄膜を形成するかに応じて選定され
る。First, the Pelger 1 is opened, and the thin film forming substrate 100 is held in a substrate holder or the like as shown in the figure (the counter electrode 6 if the device has a counter electrode 6 as shown in FIGS. 3 and 6), and The evaporated substance is retained in the evaporation source 9. Note that the evaporative substance is selected depending on what kind of thin film is to be formed.
次に、ペルジャー１を閉じて真空槽を密閉し、真空排気
系（図示せず）によって真空槽内を真空状態に排気した
後、真空槽内に、活性ガス、若しくは不活性ガス、ある
いはこれらの混合ガスをガス導入系４より１０〜１Ｏ−
３Ｐ ａの圧力で導入する。Next, the Pel Jar 1 is closed to seal the vacuum chamber, and the vacuum chamber is evacuated to a vacuum state using a vacuum exhaust system (not shown). 10~1O- of mixed gas from gas introduction system 4
Introduce at a pressure of 3 Pa.
尚、第４図や第６図に示す構成の装置の場合には１通常
、活性ガスを符号４′で示すガス導入系より導入し、不
活性ガスを符号４で示すガス導入系より導入して真空槽
内の圧力の合計が１０〜１Ｏ−３Ｐａになるようにする
が、場合によっては、符号４で示すガス導入系より活性
ガスあるいは活性ガスと不活性ガスの混合ガスを導入し
て、真空槽内の圧力の合計が１０〜ＩＯ−” Ｐ ａに
なるようにしても良い。In the case of an apparatus having the configuration shown in FIG. 4 or FIG. 6, normally the active gas is introduced from the gas introduction system indicated by the symbol 4', and the inert gas is introduced from the gas introduction system indicated by the symbol 4. The total pressure in the vacuum chamber is adjusted to 10 to 1 O-3 Pa, but in some cases, an active gas or a mixed gas of an active gas and an inert gas may be introduced from the gas introduction system indicated by numeral 4. The total pressure within the vacuum chamber may be set to 10 to IO-'' Pa.
さて、この雰囲気状態において装置を作動させ、蒸発源
９を加熱すると、蒸発物質が蒸発する。この蒸発物質、
すなわち、蒸発物質の粒子は、基板１００に向かって拡
がりつつ飛行するが、その一部、及び前記導入ガスがフ
ィラメント８より放出された熱電子との衝突によって、
正イオンにイオン化される。Now, when the apparatus is operated in this atmospheric state and the evaporation source 9 is heated, the evaporative substance evaporates. This evaporated substance,
That is, the particles of the evaporated substance fly while spreading toward the substrate 100, but some of them and the introduced gas collide with thermionic electrons released from the filament 8.
Ionized into positive ions.
このように、一部イオン化された蒸発物質は、グリッド
７を通過するが、その際、グリッド近傍において上下に
振動運動する熱電子、及び前記イオン化された導入ガス
との衝突により、さらにイオン化される。In this way, the partially ionized evaporated substance passes through the grid 7, but at that time, it is further ionized by collision with the thermionic electrons vibrating up and down near the grid and the ionized introduced gas. .
グリッド７を通過した蒸発物質中、未だイオン化されて
いない部分は、さらに上記イオン化された導入ガスとの
衝突により、正イオンにイオン化され、イオン化率が高
められる。The portion of the evaporated material that has passed through the grid 7 that has not yet been ionized is further ionized into positive ions by collision with the ionized introduced gas, thereby increasing the ionization rate.
こうして、正イオンにイオン化された蒸発粒子は、グリ
ッド７から補助電極５へ向かう電界の作用により加速さ
れるが、その多くは補助電極５を通過して基板１００に
高速で衝突付着する。このとき、イオンには電界方向へ
の力が作用するので、膜厚分布は均一になろうとし、膜
厚分布の均一化、及び薄膜の物性の均一化がより一層可
能となる。The evaporated particles thus ionized into positive ions are accelerated by the action of the electric field from the grid 7 toward the auxiliary electrode 5, but most of them pass through the auxiliary electrode 5 and collide and adhere to the substrate 100 at high speed. At this time, since a force acts on the ions in the direction of the electric field, the film thickness distribution tends to become uniform, and it becomes possible to make the film thickness distribution uniform and the physical properties of the thin film even more uniform.
こうして、大面積基板上へも均一な薄膜形成が行われる
。In this way, a uniform thin film can be formed even on a large-area substrate.
この様にして形成された薄膜は多くは基板への高速粒子
の衝突により形成されるので、基板１００への密着性に
優れ、結晶性も良好である。Most of the thin films formed in this manner are formed by the collision of high-speed particles with the substrate, and therefore have excellent adhesion to the substrate 100 and good crystallinity.
また、導入ガスとして、活性ガスを単独で、あるいは不
活性ガスと共に導入して成膜を行うと、蒸発物質を活性
ガスと化合させ、反応性良く、且つ均一組成の化合物薄
膜を形成することができる。In addition, when forming a film by introducing an active gas alone or together with an inert gas, it is possible to combine the evaporated substance with the active gas and form a compound thin film with good reactivity and a uniform composition. can.
特に、第４図や第６図に示す装置の場合は、ガス導入系
４′により基板近傍に活性ガスを導入することができる
ため、基板近傍において蒸発粒子と活性ガスとの化合が
促進され、化合物薄膜の形成がより容易となる。In particular, in the case of the apparatus shown in FIGS. 4 and 6, since the active gas can be introduced into the vicinity of the substrate by the gas introduction system 4', the combination of the evaporated particles and the active gas is promoted in the vicinity of the substrate. Formation of a compound thin film becomes easier.
以上のように、本発明の装置では、蒸発物質のイオン化
率が極めて高く、且つ安定しているので、化合物薄膜も
所望の物性を持つものを、容易且つ確実に得ることがで
きる。As described above, in the apparatus of the present invention, the ionization rate of the evaporated substance is extremely high and stable, so that a compound thin film having desired physical properties can be easily and reliably obtained.
例えば、活性ガスとして酸素、不活性ガスとしてアルゴ
ンを導入して、圧力を１０〜１Ｏ−２Ｐ ａに調整し、
蒸発物質としてアルミニウムを選択すれば、基板上には
酸化アルミニウム絶縁性薄膜を形成することができる。For example, by introducing oxygen as an active gas and argon as an inert gas, the pressure is adjusted to 10 to 1 O-2 Pa,
If aluminum is selected as the evaporation material, an aluminum oxide insulating thin film can be formed on the substrate.
尚、この場合に、蒸発物質として硅素、−酸化硅素を選
べば、二酸化硅素絶縁性薄膜を得ることができる。また
、蒸発物質としてインジウム、スズを選べば、酸化イン
ジウム、酸化スズのような導電性の薄膜も得られる。ま
た、活性ガスとして窒素、またはアンモニアをアルゴン
と共に用い、蒸発物質としてチタン、タンタルを選べば
、窒化チタン、窒化タンタルの薄膜を得ることも可能で
ある。In this case, if silicon or -silicon oxide is selected as the evaporation substance, a silicon dioxide insulating thin film can be obtained. Furthermore, if indium or tin is selected as the evaporation material, conductive thin films such as indium oxide or tin oxide can also be obtained. Further, by using nitrogen or ammonia together with argon as the active gas and selecting titanium or tantalum as the evaporator, it is also possible to obtain a thin film of titanium nitride or tantalum nitride.
ところで、本発明の薄膜形成装置では、蒸発物質及び導
入ガスのイオン化には、フィラメントによる熱電子が有
効に寄与するので、１Ｏ−２Ｐ ａ以下の圧力の高度の
真空下においても蒸発物質のイオン化が可能であり、こ
のため、薄膜中へのガス分子の取り込みを極めて少なく
することができるため、高純度の薄膜を得ることができ
る。また、薄膜の構造も極めて緻密なものとすることが
可能であり、通常、薄膜の密度はバルクのそれより小さ
いとされているが、本発明によれば、バルクの密度に極
めて近似した密度が得られることも大きな特徴の一つで
ある。すなわち、本発明の薄膜形成装置は、ＩＣ，ＬＳ
Ｉなどを構成する半導体薄膜、あるいは光学薄膜等の形
成にも極めて適しているものである。By the way, in the thin film forming apparatus of the present invention, thermionic electrons generated by the filament effectively contribute to the ionization of the evaporated substance and the introduced gas, so that the ionization of the evaporated substance can be achieved even under a high vacuum with a pressure of 1O-2Pa or less. Therefore, the incorporation of gas molecules into the thin film can be extremely reduced, making it possible to obtain a highly pure thin film. Furthermore, the structure of the thin film can be made extremely dense, and although the density of a thin film is normally considered to be smaller than that of the bulk, the present invention allows the density of the thin film to be extremely close to that of the bulk. One of the major features is that it can be obtained. That is, the thin film forming apparatus of the present invention can be used for IC, LS
It is also extremely suitable for forming semiconductor thin films constituting I, etc., optical thin films, etc.
以上説明したように、本発明の請求項１，２゜３記載の
薄膜形成装置によれば、大面積基板上に金属薄膜等のよ
うな単一元素にて構成される薄膜ばかりでなく、化合物
薄膜なども密着性良く、化学量論的薄膜により近い状態
で、且つ均一な膜厚及び均一な物性を有するように作製
することができるため、大量生産にも十分対応すること
ができる。As explained above, according to the thin film forming apparatus according to claims 1, 2, and 3 of the present invention, not only thin films composed of a single element such as metal thin films, etc., but also compound thin films can be formed on large-area substrates. Thin films can also be produced with good adhesion, in a state closer to stoichiometric thin films, and with uniform film thickness and uniform physical properties, so that they can be adequately adapted to mass production.
また、本発明の薄膜形成装置によれば、蒸発物質がイオ
ン化し、電気的に高いエネルギー（電子・イオン温度）
を有するので、反応性を必要とする成膜、結晶化を必要
とする成膜を、温度（反応温度、結晶化温度）という熱
エネルギーを与えずに実現できるので低温成膜が可能と
なる。Furthermore, according to the thin film forming apparatus of the present invention, the evaporated substance is ionized and has high electrical energy (electron/ion temperature).
Therefore, film formation that requires reactivity and film formation that requires crystallization can be realized without applying thermal energy such as temperature (reaction temperature, crystallization temperature), so that low-temperature film formation is possible.
また、請求項２記載の薄膜形成装置では、活性ガス等を
直接基板近傍に導入してガス溜りを作ることができるた
め、より反応性を高めることができ、化合物薄膜の形成
が容易となる。Furthermore, in the thin film forming apparatus according to the second aspect of the present invention, since the active gas or the like can be directly introduced into the vicinity of the substrate to create a gas reservoir, the reactivity can be further increased and the formation of a compound thin film can be facilitated.
また、請求項３記載の薄膜形成装置では、基板保持を兼
ねた対電極を設けたことにより、基板近傍の電界分布の
均一化をより一層図ることができ、均一な薄膜の形成が
容易となる。Further, in the thin film forming apparatus according to claim 3, by providing a counter electrode that also serves as a substrate support, the electric field distribution near the substrate can be made more uniform, and a uniform thin film can be easily formed. .
第１図は請求項１記載の発明の一実施例を示す薄膜形成
装置の概略的構成図、第２図（ａ）、 （ｂ）は第１回
に示す装置における基板の回転、移動手段の説明図、第
３図は第１図に示す装置に対電極を設けた場合の実施例
を示す薄膜形成装置の概略的構成図、第４図は請求項２
記載の発明の一実施例を示す薄膜形成装置の概略的構成
図、第５＠（ａ）、（ｂ）は第４図に示す装置における
基板の回転、移動手段の説明図、第６図は第４図に示す
装置に対電極を設けた場合の実施例を示す薄膜形成装置
の概略的構成図である。
１・・・・ペルジャー、２・・・・ベースプレート、３
・・・・・バッキング、４・・・・ガス導入手段、４″
・・・・基板近傍へのガス導入手段、５・・・・補助電
極、６・・・対電極、７・・・・グリッド、８・・・・
フィラメント、９・・・・蒸発源、１０．１１．１２．
１３・・・・支持体兼用の電極、２０．２１．２２・・
・・電源、１００・・・・被薄膜形成基板。
ｍ−・ｉ
ヂ；ごＶ
３２図
（乙）
（ｆ））
一一一一一一一一一”（−グソッド（７）る４圀
／
Ｉｒｆ）δ
口
うｂ
口
（乙）
（台）FIG. 1 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment of the invention as claimed in claim 1, and FIGS. An explanatory drawing, FIG. 3 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment in which a counter electrode is provided in the apparatus shown in FIG. 1, and FIG. 4 is a diagram illustrating claim 2
A schematic configuration diagram of a thin film forming apparatus showing an embodiment of the described invention, 5@(a) and (b) are explanatory diagrams of the means for rotating and moving the substrate in the apparatus shown in FIG. 4, and FIG. 5 is a schematic configuration diagram of a thin film forming apparatus showing an embodiment in which a counter electrode is provided in the apparatus shown in FIG. 4. FIG. 1...Pelger, 2...Base plate, 3
...Backing, 4...Gas introduction means, 4''
...Means for introducing gas into the vicinity of the substrate, 5.. Auxiliary electrode, 6.. Counter electrode, 7.. Grid, 8..
Filament, 9...Evaporation source, 10.11.12.
13... Electrode that also serves as a support, 20.21.22...
... Power supply, 100... Thin film formation substrate. m-・i ヂ;Go V 32 (Otsu) (f)) 11111111” (-Gusod (7) Ru4 area/Irf) δ Mouth b Mouth (Otsu) (Tai)
Claims (3)
混合ガスが導入される真空槽と、この真空槽内において
蒸発物質を蒸発させるための蒸発源と、上記真空槽内に
おいて上記蒸発源と対向するように配置された基板と、
上記蒸発源と上記基板との間に配備された熱電子発生用
のフィラメントと、このフィラメントと上記基板との間
に配備され蒸発物質を通過させうるグリッドと、上記基
板の蒸発源と対向する側近傍に配備され蒸発物質を通過
させうる電界分布調節用の補助電極と、真空槽内に所定
の電気的状態を実現するための電源手段と、真空槽内と
上記電源手段とを電気的に連結する導電手段とを有し、
上記フィラメント及び補助電極に対し上記グリッドが正
電位となるようにし、且つ、上記基板近傍の電界分布を
調節可能としたことを特徴とする薄膜形成装置。1. a vacuum chamber into which an active gas or an inert gas or a mixture of these gases is introduced; an evaporation source for evaporating the evaporation substance within the vacuum chamber; and an evaporation source disposed in the vacuum chamber so as to face the evaporation source. a board that has been
a filament for generating thermionic electrons disposed between the evaporation source and the substrate; a grid disposed between the filament and the substrate and capable of passing the evaporation substance; and a side of the substrate facing the evaporation source. An auxiliary electrode for adjusting electric field distribution that is arranged nearby and can pass the evaporated substance, a power source means for realizing a predetermined electrical state in the vacuum chamber, and an electrical connection between the inside of the vacuum chamber and the power source means. and a conductive means to
A thin film forming apparatus characterized in that the grid has a positive potential with respect to the filament and the auxiliary electrode, and the electric field distribution near the substrate can be adjusted.
ガス導入を可能にしたことを特徴とする薄膜形成装置。2. 2. The thin film forming apparatus according to claim 1, wherein a gas can be introduced into the vicinity of the substrate.
いて、基板保持を兼ねる対電極を有することを特徴とす
る薄膜形成装置。3. 3. The thin film forming apparatus according to claim 1, further comprising a counter electrode that also serves as a substrate support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20547490A JPH0499169A (en) | 1990-08-02 | 1990-08-02 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20547490A JPH0499169A (en) | 1990-08-02 | 1990-08-02 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499169A true JPH0499169A (en) | 1992-03-31 |
Family
ID=16507460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20547490A Pending JPH0499169A (en) | 1990-08-02 | 1990-08-02 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09228046A (en) * | 1996-02-23 | 1997-09-02 | Ricoh Co Ltd | Take-up type film forming device |
-
1990
- 1990-08-02 JP JP20547490A patent/JPH0499169A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09228046A (en) * | 1996-02-23 | 1997-09-02 | Ricoh Co Ltd | Take-up type film forming device |
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