JPH049464A - Electrode for vapor deposition and method of vapor deposition by using it - Google Patents
Electrode for vapor deposition and method of vapor deposition by using itInfo
- Publication number
- JPH049464A JPH049464A JP11499690A JP11499690A JPH049464A JP H049464 A JPH049464 A JP H049464A JP 11499690 A JP11499690 A JP 11499690A JP 11499690 A JP11499690 A JP 11499690A JP H049464 A JPH049464 A JP H049464A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode material
- aggregate
- silicon
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims description 18
- 239000007772 electrode material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000010891 electric arc Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000011362 coarse particle Substances 0.000 claims 1
- 239000000565 sealant Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は蒸着に用いる電極、特に、熱衝撃に脆い材料、
特に、モノクリスタル電極材料からなる電極に関するも
のである。発明はまた、上記のような電極を用いる蒸着
法、及びこれら電極を製造する方法に関するものである
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to electrodes used for vapor deposition, particularly materials that are fragile to thermal shock,
In particular, it relates to electrodes made of monocrystalline electrode materials. The invention also relates to a vapor deposition method using electrodes as described above, and to a method for manufacturing these electrodes.
以前の特許及び特許申請書で、２つの電極の間に電弧を
発生させて基板の上にアーク蒸着する方法について記述
した。２つの電極のうち少なくとも１つは、基板の上に
析出させる材料に組入れられるシリコンとすることがで
きる。アークは電極の一方を他に近づけて実質的に接触
させることで発生し、ついで電極を離して両者の間にア
ークを形成し、一方の電極の材料を蒸発させ電極にもと
もと元素又は化合物として存在する材料を基板の上に析
出させ又は蒸発の起こる真空の空間内のガス状成分と反
応させ、又は他の電極の材料と反応させ、基板の上に化
合物又は合金の一部として析出させる。Previous patents and patent applications have described methods for generating an electric arc between two electrodes for arc deposition onto a substrate. At least one of the two electrodes may be silicon incorporated into the material deposited on the substrate. An arc is created by bringing one electrode close together so that they are practically touching the other, and then moving the electrodes apart to form an arc between them, vaporizing the material in one electrode and removing the material originally present in the electrode as an element or compound. The material is deposited on the substrate or reacted with gaseous components in the vacuum space where evaporation occurs, or with other electrode materials, and deposited as part of a compound or alloy on the substrate.
これらの原理によれば、基板の近くでアークを発生させ
る領域は比較的高い真空度に保たれる。According to these principles, the area where the arc is generated near the substrate is maintained at a relatively high degree of vacuum.
再現性のある条件を得るためアークは制御されアークの
発生は適正な速度で繰返される。The arc is controlled and arcing is repeated at a suitable rate to obtain reproducible conditions.
シリコンは元素又は化合物として析出させることができ
、また多くの目的の場合、析出させる材料としては高純
度のシリコンを用いることが望ましく又は時には重要で
ある。Silicon can be deposited as an element or a compound, and for many purposes it is desirable or sometimes important to use high purity silicon as the deposited material.
しかし、この目的のために、即ち元素シリコン又はシリ
コンカーバイド又はシリコン窒化物等の化合物の蒸着の
ために、モノクリスタルのシリコン電極を作る場合、ア
ーク発生に伴う熱衝撃によりこの高度に脆い材料に割れ
及び破損が生しることが分かった。この現象は、他の結
晶質材料、即ちシリコンカーバイド及びシリコン窒化物
の場合にも同様に認められる。However, when making monocrystalline silicon electrodes for this purpose, i.e. for the deposition of elemental silicon or compounds such as silicon carbide or silicon nitride, the thermal shock associated with arcing causes cracks in this highly brittle material. It was found that damage occurred. This phenomenon is similarly observed in the case of other crystalline materials, namely silicon carbide and silicon nitride.
このプロセスに用いる比較的コストの高いアイテムであ
る電極に劣化が起こることは前に述べたシステムの欠陥
であり、上述のような結晶質材料を電極として選定した
いときは尚更である。Degradation of the electrodes, which are relatively high cost items used in this process, is a drawback of the previously mentioned systems, especially when crystalline materials such as those mentioned above are desired for the electrodes.
そこで、今回の発明の主目的は、上述の欠点のないアー
ク蒸着プロセス用の改善された電極を提供することであ
る。The main object of the present invention is therefore to provide an improved electrode for arc evaporation processes that does not have the above-mentioned drawbacks.
今回の発明のもう一つの目的は、アーク蒸着に用いる電
極の改善された製造方法を提供することである。Another object of the present invention is to provide an improved method of manufacturing electrodes for use in arc evaporation.
本発明の更にもう一つの目的は、本発明の新しい電極の
製造の改善された方法を提供することである。Yet another object of the invention is to provide an improved method of manufacturing the new electrode of the invention.
この発明は従来の電気的プロセスに用いる電極の製造法
の常識を破る驚くべきものであった。電極を伝導性シャ
ンクに接合された電極材料の軽（焼結したマクロ粒子で
作り、このシャンクにより電流が焼結粒子から成る電極
に流れたとき、上述の問題が解決されるのである。焼結
する粒子は粗く破砕した結晶質の粒子でなければならな
い。この粒子は例えばシリコンであるがシリコンカーバ
イド又はシリコン窒化物でもよく、これらは炭素棒又は
金属棒、即ち本体と電気的に接触する伝導部を形成する
シャンクと接合するか又は空気的接触状態になる。本発
明によれば、電極本体の密度は、固体材料の密度の精々
７０％程度としなければならない。This invention was surprising because it broke the conventional wisdom of manufacturing methods for electrodes used in electrical processes. The above-mentioned problem is solved when the electrode is made of light (sintered) macroparticles of electrode material bonded to a conductive shank, and this shank allows current to flow through the electrode made of sintered particles. The particles must be coarsely crushed crystalline particles, for example silicon but also silicon carbide or silicon nitride, which are carbon rods or metal rods, i.e. conductive parts in electrical contact with the body. According to the invention, the density of the electrode body should be at most 70% of the density of the solid material.
望ましい条件として、本体の形状は作用端からシャンク
の出ている他端に向かって広がっており、アークを形成
したとき本体の作用端にコツプ状のくぼみができて、こ
こに溶融した電極材料のたまりができるようにする。A desirable condition is that the shape of the main body expands from the working end toward the other end where the shank protrudes, so that when an arc is formed, a concave depression is formed at the working end of the main body, and the molten electrode material is deposited here. Allow accumulation to occur.
固体の結晶質電極で生じた破損問題が、本発明の電極で
は、同じ熱衝撃をうけながら、何故起こらないかについ
て全部の理由は分からないが、軽度の焼結のため粒子間
の溶融による架橋の数に限りがあり、従って架橋は電気
の伝達には充分であるが、作用面からの熱の伝達は少な
くなると考えられる。The reason why the breakage problem that occurred with the solid crystalline electrode does not occur with the electrode of the present invention even though it is subjected to the same thermal shock is not fully understood, but the slight sintering may cause cross-linking due to interparticle melting. It is believed that there is a limited number of cross-links, and therefore the crosslinks are sufficient for the transfer of electricity, but that the transfer of heat from the working surface is reduced.
電極材料は結晶質のシリコン又はシリコンカーバイド又
はシリコン窒化物が望ましくこれを固体密度の５０ない
し６０％の密度を持つ多孔質のものとする。粒子の大き
さは大体２から１５閣までのものがよい。The electrode material is preferably crystalline silicon, silicon carbide, or silicon nitride, which is porous and has a density of 50 to 60% of the solid density. The particle size should be approximately 2 to 15 mm.
電極の作り方で有利な方法は、耐火材料、例えばアルミ
ナ、で作った型を用意し、これにグラファイト等の炭素
棒を伝導性シャンクとして中心に置き、そのまわりに結
晶質の電極材料の粒子を、細かい層と粗い層が交互にな
るように入れ、型の中の集合体には機械的圧力はかけず
にそのまま焼結するのである。An advantageous method for making electrodes is to prepare a mold made of a refractory material, such as alumina, in which a carbon rod such as graphite is placed in the center as a conductive shank, and particles of crystalline electrode material are placed around it. The fine and coarse layers are placed in alternating layers, and the aggregate in the mold is sintered without applying any mechanical pressure.
特に適切と思われるのは、はじめは集合体の温度を約６
００°Ｃまで４０ないし５０分かけて徐々に上げ、その
後は毎分２５“Ｃないし５０゛Ｃの加熱速度で１２８０
℃ないし１４００°Ｃ１望ましくは約１３７５℃、の焼
結温度にあげ、焼結温度に約１５分保持して、集合体の
密度が余り高くならないように、粒子間の溶融結合即ち
架橋を制限する方法である。It seems particularly appropriate to initially set the temperature of the aggregate to about 6
00°C gradually over 40 to 50 minutes, then 1280°C at a heating rate of 25"C to 50°C per minute.
Raise the sintering temperature to 1400°C to 1400°C, preferably about 1375°C, and hold at the sintering temperature for about 15 minutes to limit fusion bonding or crosslinking between the particles so that the density of the aggregate does not become too high. It's a method.
この電極は上述したように、また既得の特許に述べたよ
うに、アーク蒸着プロセスに用いることができる。This electrode can be used in arc deposition processes as described above and in prior patents.
今回の発明の目的、特徴、及び利点は以下の説明によっ
て更に明瞭に理解されるであろう。添付の図面を参照さ
れたい：
第１図は今回の発明に従って行う電極の製造法を示す断
面図であり、
第２図は電極を用いてアーク蒸着プロセスを行うための
装置を示す図解式立面図である。The objects, features, and advantages of the present invention will be more clearly understood from the following description. Please refer to the accompanying drawings: FIG. 1 is a cross-sectional view illustrating the method of manufacturing an electrode according to the present invention, and FIG. 2 is a schematic elevational view of an apparatus for carrying out an arc deposition process using an electrode. It is a diagram.
第１図には円錐形の内容積１１を持つアルミナ製の型１
０が示しである。電極２０（第２図参照）はこの中で作
られる。この型１ｏの中に、電極本体に接合されて電気
伝導性エレメントとなる炭素棒１４のまわりにモノクリ
スタル又はポリクリスタルの電極材料を破砕した粗粒工
２及び細粒工３が交互の層として入れられる。！種本体
は既述のように真空オーブン内で型に入れたまま粒子を
焼結することによって作られる。Figure 1 shows an alumina mold 1 with a conical internal volume 11.
0 is the indication. Electrodes 20 (see FIG. 2) are made therein. In this mold 1o, a coarse-grained material 2 and a fine-grained material 3 made of crushed monocrystalline or polycrystalline electrode material are arranged as alternating layers around a carbon rod 14 that is joined to the electrode body and becomes an electrically conductive element. Can be put in. ! The seed body is made by sintering the particles in a mold in a vacuum oven as described above.
こうして得られた電極２ｏは粗粒１２と細粒１３が軽度
の焼結で一体の集合体となった電極本体からなり、同じ
材料の固体のモノクリスタル又はポリクリスタルの電極
よりも遥かに熱衝撃を受けにくいものとなる。The electrode 2o obtained in this way consists of an electrode body in which coarse grains 12 and fine grains 13 are integrated by slight sintering, and has a much higher thermal shock than solid monocrystalline or polycrystalline electrodes made of the same material. It becomes difficult to accept.
１ｉ橋は第２図に示すようにアーク蒸着プロセスに用い
ることができる。The 1i bridge can be used in an arc deposition process as shown in FIG.
特に、この電極を、例えば、基板２３の上に高純度のシ
リコンを析出させたければシリコンの、又はシリコンカ
ーバイド又はシリコンとシリコンカーバイドの混合物を
析出させるのであればシリコンとシリコンカーバイドの
塊状片の、同様の製造法で作った電極２２と並置して用
いることができる。電極２０．２２はポンプ２５が示す
ように、既述の適用例で、及び被覆法の特許で記述した
ような真空レベルにされた密閉室２４の中で用いられる
。In particular, this electrode may be made of silicon, for example, if high purity silicon is to be deposited on the substrate 23, or of silicon and silicon carbide, if silicon carbide or a mixture of silicon and silicon carbide is to be deposited. It can be used in juxtaposition with an electrode 22 made by a similar manufacturing method. The electrodes 20,22 are used in the applications described above, as shown by the pump 25, and in a closed chamber 24 brought to a vacuum level as described in the coating method patent.
電極２２は駆動装置２６によって往復運動させられて電
極２０と接触したり離れたりし、その間電源２７は２つ
の電極を渡って接続され、円錐形電極本体の狭い作用端
の端面のコツプ状のくぼみ２９に溶融した電極材料のブ
ール２８が形成される。Ｗ気の発生とその基板２３上へ
の析出については前述の特許及び適用例に詳細に記述さ
れている。特に、アークは電極２２を電極２０のプール
と断続的に接触させることによって、又は電極２２を本
体２１と接触させることによって発生させなければなら
ない。更に、アークは繰返しのアークとばしによって弱
められるので、それによって電極本体２１にそっての移
動が制御される。これによってアークは常にコツプ状の
部分２９に向けて発生され、電極の広い端部又は伝導性
シャンク１４に向かうことはない。The electrode 22 is reciprocated into and out of contact with the electrode 20 by a drive 26, while a power source 27 is connected across the two electrodes and connected to a conical indentation in the end face of the narrow working end of the conical electrode body. A boule 28 of molten electrode material is formed in 29 . The generation of W gas and its precipitation on the substrate 23 are described in detail in the aforementioned patents and application examples. In particular, the arc must be generated by intermittent contact of electrode 22 with a pool of electrodes 20 or by contact of electrode 22 with body 21. Furthermore, the arc is weakened by repeated arc blowing, thereby controlling its movement along the electrode body 21. The arc is thereby always directed towards the tipped portion 29 and not towards the wide end of the electrode or the conductive shank 14.
被覆作業中室２４内の真空度は１０４トール以上に保た
れる（［ち、圧力は１０〜３トールより高くなることは
ない）、またアークは、３０ないし１００アンペアの電
流を用い、電圧３０ないし１５０Ｖでとばされる。During the coating operation, the vacuum in chamber 24 is maintained above 104 Torr (and the pressure never exceeds 10-3 Torr), and the arc is applied at a voltage of 30 Torr using a current of 30 to 100 Amps. It is blown off at 150V.
豊ｌじＬ勇
一般に第１図に示す形状を持ち、内容積２５０ｉのアル
ミナ容器に、大体３から１３腫のモノクリスタルシリコ
ンの破片を粒度別の層に分けて入れる。炭素電極棒を図
に示すように集合体に挿入する。In general, about 3 to 13 particles of monocrystalline silicon are placed in layers according to particle size in an alumina container having the shape shown in Fig. 1 and having an internal volume of 250 μm. Insert the carbon electrode rod into the assembly as shown.
この集合体を真空オーブン内で真空度１０−′ないし１
０−’トールで焼結するのであるが、はじめは６００℃
の温度まで４０分かけて温度をあげてゆき、つぎに毎分
５０℃で急速に加熱して】３７５°Ｃの温度まで上げる
。集合体を１３７５°Ｃの焼結温度に１５分間保持する
。電極本体は容易にるつぼから取り出すことができ、そ
の密度は固体シリコンの密度の５０ないし６０％となる
。こうして作った電極本体２ケを、シリコンを基板にア
ーク蒸着させる電極２０及び２２として用いる。真空室
内の真空度は１０−’トールとし、蒸着作業はこのレベ
ル又はこれより良い真空度を維持する。電極本体はシリ
コンで構成され記述の方法で作られる。This assembly is placed in a vacuum oven at a vacuum degree of 10-' to 1.
It is sintered at 0-'Torr, but initially at 600℃.
The temperature was increased over 40 minutes to a temperature of 375°C, then rapidly heated at 50°C per minute. The assembly is held at a sintering temperature of 1375°C for 15 minutes. The electrode body can be easily removed from the crucible and has a density of 50 to 60% of that of solid silicon. The two electrode bodies thus produced are used as electrodes 20 and 22 for arc-depositing silicon onto a substrate. The vacuum in the vacuum chamber is 10-' Torr, and the deposition operation is maintained at this level or better. The electrode body is composed of silicon and made in the manner described.
基板２３は、被覆される面をあらかじめサンドブラスト
で清浄にしたアルミ板である。アークはおよそ毎秒１回
の割合でとばす、基板はアークから約１５ｃｍの所に置
き、電流約９０アンペア、電圧約９０Ｖでアークを発生
させる。被覆は極めて均一に行われ、シリコンからなる
ものである。The substrate 23 is an aluminum plate whose surface to be coated has been cleaned by sandblasting in advance. The arc is blown approximately once per second, the substrate is placed approximately 15 cm from the arc, and the arc is generated at a current of approximately 90 amperes and a voltage of approximately 90 volts. The coating is very uniform and consists of silicon.
析出物に加えたい他の材料があれば、これをコツプ状の
くぼみ２９に加えることができる。例えば、２本のシリ
コン電極を用いるとき、シリコンカーバイド又は硼素カ
ーバイドをコツプ状くぼみに加え、基板の上にシリコン
カーバイド又は硼素カーバイドを電極材料自体からのシ
リコンと共に蒸発させて析出させることができる。また
、密閉室内を窒素ガス雰囲気とすれば、基板の上に窒化
物の析出を形成することもできる。If there are other materials that one would like to add to the deposit, they can be added to the pot 29. For example, when using two silicon electrodes, silicon carbide or boron carbide can be added to the pot and deposited on the substrate by evaporating the silicon carbide or boron carbide along with the silicon from the electrode material itself. Further, by creating a nitrogen gas atmosphere in the sealed chamber, nitride precipitation can be formed on the substrate.
第１図はこの発明に係る電極の製造方法を説明する断面
図、第２図はこの発明に係る電極を用いてアーク蒸着プ
ロセスを行うための装置の説明立面図である。
２０．２２は電極。
特許出願人 ベイバー・チクノロシーズ・インコーポレ
イテッドFIG. 1 is a sectional view illustrating a method of manufacturing an electrode according to the present invention, and FIG. 2 is an elevational view illustrating an apparatus for performing an arc evaporation process using the electrode according to the present invention. 20.22 is an electrode. Patent Applicant: Baber Chikunoroses Incorporated
Claims (10)
電極本体と、前記本体の内部まで達して延びる、前記電
極材料とは異なる、高伝導性材料のシャンクから構成さ
れる、アーク蒸着に用いる電極。(1) An arc consisting of an electrode body mainly made of lightly sintered coarse particles of electrode material, and a shank made of a highly conductive material different from the electrode material and extending to the inside of the body. Electrode used for vapor deposition.
料が結晶質材料であることを特徴とする請求項（１）記
載の電極。(2) The electrode according to claim (1), wherein the electrode material is a crystalline material.
料がシリコン、シリコンカーバイド、及びシリコン窒化
物からなるグループから選定されたもので形成されてい
ることを特徴とする請求項（１）記載の電極。(3) The electrode according to claim (1), wherein the electrode material is made of a material selected from the group consisting of silicon, silicon carbide, and silicon nitride. 1) The electrode described.
大体切頭円錐形で一端は狭く他端は広く、前記シャンク
は広い方の端部から突出していることを特徴とする請求
項（１）記載の電極。4. The electrode of claim 1, wherein the electrode is generally frustoconically shaped, narrow at one end and wide at the other end, and the shank projects from the wider end. The electrode according to claim (1).
体は、固体電極材料の密度の精々７０％の密度になるよ
うに焼結形成されていることを特徴とする請求項（１）
記載の電極。(5) The electrode according to claim (1), wherein the electrode body is sintered and formed to have a density that is at most 70% of the density of the solid electrode material. 1)
Electrode as described.
電極本体と、前記本体内部に達してのびる、前記電極材
料とは異なる高伝導性材料のシャンクから構成されるア
ーク蒸着用の電極の製造方法であって、前記方法は：前
記電極材料の破片を焼結に適する集合体の形状に成形し
、前記集合体に伝導性の棒を、前記集合体の前記シャン
クとなるように挿入し、前記集合体と前記棒を真空炉内
で電極材料の破片が一体の集合体となるように軽く焼結
されるに充分な時間焼結する、等のステップからなるこ
とを特徴とする方法。(6) An electrode body for arc evaporation consisting of an electrode body mainly made of lightly sintered coarse pieces of electrode material, and a shank made of a highly conductive material different from the electrode material, which extends into the body. A method of manufacturing an electrode, said method comprising: forming pieces of said electrode material into a shape of an aggregate suitable for sintering, and placing a conductive rod in said aggregate to serve as said shank of said aggregate. and sintering the assembly and rod in a vacuum furnace for a sufficient period of time to cause the pieces of electrode material to be lightly sintered into an integral assembly. Method.
真空炉内で前記集合体の温度が瞬時に約６００℃の温度
になるように、４０ないし５０分加熱し、その後前記集
合体の温度を前記電極材料の溶融点以下の焼結温度に大
体毎分２５ないし５０℃の速度で上昇させることで達成
される方法。(7) The method according to claim (6), wherein the sintering is performed by heating the aggregate in the vacuum furnace for 40 to 50 minutes so that the temperature of the aggregate instantly reaches about 600°C, and then A method achieved by increasing the temperature of the assembly to a sintering temperature below the melting point of the electrode material at a rate of approximately 25 to 50°C per minute.
料はシリコンで、前記焼結温度は約１３７５℃で、また
前記集合体は前記焼結温度に約１５分間保持される方法
。(8) The method of claim (7), wherein the electrode material is silicon, the sintering temperature is about 1375°C, and the aggregate is held at the sintering temperature for about 15 minutes. .
は主として結晶質シリコン、シリコンカーバイド又はシ
リコン窒化物の２ないし１５ｍｍの粒径の粒子からなる
もの。(9) A method according to claim (8), wherein the aggregate consists primarily of particles of crystalline silicon, silicon carbide or silicon nitride with a particle size of 2 to 15 mm.
なる方法： まず前記電極材料の破片を焼結可能の集合体の形状に成
形し、伝導性の棒を前記集合体のシャンクを形成するよ
うに挿入し、 次に前記集合体と前記棒を真空炉内で破片が軽く焼結さ
れて一体の集合体の電極本体となるのに充分な時間焼結
し、 密閉室内に前記電極本体を別の電極と、被覆されるべき
基板に関して適切な間隔で、並置し、前記密閉質を１０
＾−＾５トールを下まわらない真空度で真空とし、 前記電極本体と前記別の電極の間に電弧を繰返し発生さ
せて、前記電極材料を蒸発させ前記基体の上に、少なく
とも一部は蒸発した電極材料からなる被覆を、蒸着させ
るアーク蒸着電極を形成する方法。(10) A method of arc evaporation, comprising the following steps: first forming the pieces of the electrode material into the shape of a sinterable aggregate, and a conductive rod forming the shank of the aggregate; the assembly and rod are then sintered in a vacuum furnace for a sufficient period of time to lightly sinter the pieces into an integral assembly electrode body, and the electrode body is placed in a sealed chamber. juxtaposed with another electrode at an appropriate spacing with respect to the substrate to be coated, and the sealant was
A vacuum is created with a degree of vacuum not less than 5 Torr, and an electric arc is repeatedly generated between the electrode body and the other electrode to evaporate the electrode material and at least partially evaporate onto the substrate. A method of forming an arc-deposited electrode by depositing a coating of electrode material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114996A JP3067782B2 (en) | 1990-04-27 | 1990-04-27 | Electrode for vapor deposition and vapor deposition method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114996A JP3067782B2 (en) | 1990-04-27 | 1990-04-27 | Electrode for vapor deposition and vapor deposition method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH049464A true JPH049464A (en) | 1992-01-14 |
| JP3067782B2 JP3067782B2 (en) | 2000-07-24 |
Family
ID=14651725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2114996A Expired - Fee Related JP3067782B2 (en) | 1990-04-27 | 1990-04-27 | Electrode for vapor deposition and vapor deposition method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3067782B2 (en) |
-
1990
- 1990-04-27 JP JP2114996A patent/JP3067782B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3067782B2 (en) | 2000-07-24 |
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