JPH049448B2 - - Google Patents
Info
- Publication number
- JPH049448B2 JPH049448B2 JP59022892A JP2289284A JPH049448B2 JP H049448 B2 JPH049448 B2 JP H049448B2 JP 59022892 A JP59022892 A JP 59022892A JP 2289284 A JP2289284 A JP 2289284A JP H049448 B2 JPH049448 B2 JP H049448B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light source
- transfer surface
- illuminance distribution
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims 4
- 238000005286 illumination Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
<技術分野>
本発明は、マスクパターンを転写する半導体露
光装置において、パルス発光型の光源を用いた場
合の、転写面の照射エネルギー分布を測定する照
度分布測定方法およびその装置に関するものであ
る。Detailed Description of the Invention <Technical Field> The present invention relates to an illuminance distribution measuring method for measuring the irradiation energy distribution on a transfer surface when a pulsed light source is used in a semiconductor exposure apparatus that transfers a mask pattern; This is related to the device.
<従来技術>
近年、IC、LSIの素子の線幅の微細化とともに
素子の線幅の均一化を図る必要があるため、半導
体露光装置における転写面での照射エネルギーの
均一性が従来以上に要求されてきている。従来、
転写面の照度分布の測定は、1個の光量検出器を
転写面に沿つて移動させて行なつているが、この
場合には、光源の時間的な輝度変化が、空間的な
照度分布の不均一性となつて現われてしまうとい
う欠点がある。<Prior art> In recent years, as the line widths of IC and LSI elements have become finer, it has become necessary to make the line widths of the elements more uniform, so uniformity of irradiation energy on the transfer surface of semiconductor exposure equipment is required more than ever. It has been done. Conventionally,
The illuminance distribution on the transfer surface is measured by moving one light amount detector along the transfer surface, but in this case, the temporal brightness change of the light source is affected by the spatial illuminance distribution. The disadvantage is that it appears as non-uniformity.
一方、光源は超高圧水銀ランプや超高圧キセノ
ン水銀ランプを用い、ランプへの入力を一定にす
るか、又はランプの輝度を一定にするという従来
の使用方法では、ランプの輝度変化は存在すると
しても微少であり、そのため転写面での照度分布
測定値の誤差も微少であつた。しかしながら、最
近では、光源の寿命を長くする為や高輝度を得る
為に、前記ランプへの入力電力を、焼付時(マス
クパターンの転写時)のみ高くするパルス型の発
光光源として使用したり、あるいはパルス発光す
る光源、例えばエキシマレーザなどを用いること
が多くなつてきている。この場合は、各パルスの
発光エネルギーに無視できない差が存在するた
め、1個の光量検出器を転写面内で移動させなが
ら、照度分布を測定するという従来の方法では、
照度分布を正しく測定することができない。 On the other hand, in the conventional method of using an ultra-high-pressure mercury lamp or an ultra-high-pressure xenon mercury lamp as a light source, and keeping the input to the lamp constant or the lamp brightness constant, it is assumed that there is a change in lamp brightness. Therefore, the error in the measured value of the illuminance distribution on the transfer surface was also very small. However, in recent years, in order to extend the life of the light source and obtain high brightness, pulse-type light emitting light sources are used in which the input power to the lamp is increased only during printing (when transferring the mask pattern). Alternatively, a light source that emits pulsed light, such as an excimer laser, is increasingly being used. In this case, since there is a non-negligible difference in the emission energy of each pulse, the conventional method of measuring the illuminance distribution while moving one light amount detector within the transfer surface,
Unable to measure illuminance distribution correctly.
<目的>
本発明は、上記の欠点を除去し、転写面の照度
分布測定中に光源の輝度変化が存在しても、正確
な照度分布を測定することができる照度分布測定
方法およびその装置を提供することを目的とす
る。<Objective> The present invention eliminates the above-mentioned drawbacks and provides an illuminance distribution measuring method and apparatus that can accurately measure the illuminance distribution even if there is a change in the brightness of the light source during the measurement of the illuminance distribution on the transfer surface. The purpose is to provide.
<実施例>
以下、本発明の実施例について図面を参照しな
がら説明する。<Examples> Examples of the present invention will be described below with reference to the drawings.
第1図は本発明に関わる装置の一例を示す図で
ある。1は光源部で、楕円形の曲面を有するミラ
ーと超高圧水銀ランプ若しくは超高圧キセノン水
銀ランプとオプテイカルインテグレータとの組み
合わせ、またはパルス発光する光源(たとえば、
エキシマレーザ)等で構成されており、出力端に
2次光源を形成する。2はコリメーターレンズ
で、光源部1により形成された2次光源を用い
て、平行光線を作り出す機能を有しており、3は
該平行光線の光路を転換させるための平面ミラ
ー、4は基準光量検出器で、前記平行光線の延長
上、平面ミラー3を透過する光源部1からの光の
輝度変化を検出するためのものである。また、5
は転写すべきパターンが配置されているマスク
面、6はマスク面5上のパターンを転写面に転写
する為の投影光学系、7は転写面、8は転写面光
量検出器で、転写面7における照度分布を測定す
るため、転写面7に沿つて平行に移動可能に配置
されている。9は演算部で、基準光量検出器4の
出力と、転写面光量検出器8の出力とを入力し、
演算を行なつて照度分布を出力する機能を持つて
いる。 FIG. 1 is a diagram showing an example of a device related to the present invention. Reference numeral 1 denotes a light source section, which is a combination of a mirror having an elliptical curved surface, an ultra-high pressure mercury lamp or an ultra-high pressure xenon mercury lamp, and an optical integrator, or a light source that emits pulsed light (for example,
excimer laser), etc., and forms a secondary light source at the output end. 2 is a collimator lens, which has the function of creating parallel light rays using the secondary light source formed by the light source section 1; 3 is a plane mirror for converting the optical path of the parallel rays; 4 is a reference This is a light amount detector, which is used to detect changes in the brightness of light from the light source section 1 that passes through the plane mirror 3 as an extension of the parallel light rays. Also, 5
is a mask surface on which a pattern to be transferred is arranged; 6 is a projection optical system for transferring the pattern on the mask surface 5 to the transfer surface; 7 is a transfer surface; 8 is a transfer surface light amount detector; It is arranged so as to be movable in parallel along the transfer surface 7 in order to measure the illuminance distribution at . 9 is a calculation unit which inputs the output of the reference light amount detector 4 and the output of the transfer surface light amount detector 8;
It has the function of performing calculations and outputting the illuminance distribution.
次に、上記のように構成された装置の作動につ
いて説明する。 Next, the operation of the apparatus configured as described above will be explained.
まず、光源部1内の光源のパルス発光により発
生したパルス光、又は光源部1内に設けられた不
図示のシヤツターにより光量が制限されたパルス
光は、光源部1の出力端に2次光源を形成し、コ
リメーターレンズ2を通過して、そのほとんどの
光は平面ミラー3により光路を折りまげられ、マ
スク面5を照明し、投影光学系6を介して転写面
7に集光する。この時、平面ミラー3の反射率は
100%であることが効率上望ましいが、実際には
1〜2%の光を透過させるように平面ミラー3を
作成しておく。このわずかな透過光を、基準光量
検出器4により検知することにより、光源の輝度
変化をモニターすることができる。これは、平面
ミラー3の属性により、入射光と透過光との関係
が一義的に決まるからである。 First, the pulsed light generated by the pulsed light emission of the light source in the light source section 1, or the pulsed light whose light amount is limited by a shutter (not shown) provided in the light source section 1, is sent to the output end of the light source section 1 as a secondary light source. After passing through the collimator lens 2, most of the light has its optical path bent by the plane mirror 3, illuminates the mask surface 5, and is focused on the transfer surface 7 via the projection optical system 6. At this time, the reflectance of the plane mirror 3 is
Although it is desirable for the efficiency to be 100%, in reality, the plane mirror 3 is prepared so as to transmit 1 to 2% of the light. By detecting this small amount of transmitted light with the reference light amount detector 4, changes in the brightness of the light source can be monitored. This is because the relationship between incident light and transmitted light is uniquely determined by the attributes of the plane mirror 3.
次に、転写面光量検出器8の最初の位置を、照
度分布を表示する際に基準となる任意の位置に配
置しておき、転写面7の照度分布を測定すべき位
置に順次移動させながら光源部1よりパルス光を
発生させ、該パルス光に同期させて各位置での照
度をモニターする。光源部1からの各パルス光の
強度が変化すると、転写面7上の照度もそれに応
じて変化するが、転写面7上の各点の照度を測定
するのと同時に基準光量検出器4により平面ミラ
ー3を透過する前述の微弱光の光強度を測定して
おくことにより、光源部1からの各パルス光の強
度変化に左右されずに、転写面7上の照度分布を
正しく求めることができる。 Next, the initial position of the transfer surface light amount detector 8 is placed at an arbitrary position that will serve as a reference when displaying the illuminance distribution, and while the illuminance distribution of the transfer surface 7 is sequentially moved to the position where the illuminance distribution is to be measured. Pulsed light is generated from the light source section 1, and the illuminance at each position is monitored in synchronization with the pulsed light. When the intensity of each pulsed light from the light source section 1 changes, the illuminance on the transfer surface 7 changes accordingly, but at the same time as measuring the illuminance at each point on the transfer surface 7, the reference light amount detector 4 By measuring the light intensity of the above-mentioned weak light transmitted through the mirror 3, the illuminance distribution on the transfer surface 7 can be accurately determined without being influenced by changes in the intensity of each pulsed light from the light source section 1. .
これを定量的に説明すると、以下のとおりであ
る。 A quantitative explanation of this is as follows.
今、光源部1からの第1回目のパルス光による
基準光量検出器4の出力をS0、転写面光量検出器
8の出力及び位置をそれぞれI0,X0で表わし、第
2回目以降の基準光量検出器4の出力をSI、転写
面光量検出器8の出力及び位置をII,XIで表わす
と、基準位置X0に対する位置XIの照度比UIは、
UI=S0/SI×II/I0(I=2、3、…) ……(1)
で表わせる。 Now, the output of the reference light amount detector 4 due to the first pulsed light from the light source section 1 is represented by S 0 , the output and position of the transfer surface light amount detector 8 are represented by I 0 and X 0 , respectively, and When the output of the reference light amount detector 4 is represented by S I and the output and position of the transfer surface light amount detector 8 are represented by I I and X I , the illuminance ratio U I of the position X I with respect to the reference position X 0 is as follows: U I =S 0 /S I ×I I /I 0 (I=2, 3,...) ...(1) It can be expressed as follows.
すなわち、(1)式から明らかなように、(S0/SI)
の項は、転写面7の照度分布を測定すべき位置に
順次移動させながら光源部1よりパルス光を発生
させる過程において、該パルス光の強度が変化し
た場合にそれに応じて変化する転写面7上の照度
の変化(II/I0)量を、補正する働きがある。し
たがつて、測定中の光源部(光源)1の輝度変化
が大きくても、照度分布を正しく測定することが
可能となる。演算部9は、上記の(1)式に測定値を
代入し、照度比UIを計算する為のものであるが、
演算部9に多数のメモリを接続することにより照
度分布の基準点を変えることが可能である。つま
り、各測定点における各検出器4および8の出力
値をメモリに納入しておき、測定が完了してか
ら、基準にしたい任意の位置XIの時のSI,IIを、
(1)式のS0,I0の代わりに代入して、XIを除く各点
の照度比UIを計算すればよい。 In other words, as is clear from equation (1), (S 0 /S I )
This term refers to the transfer surface 7 that changes in response to changes in the intensity of the pulsed light during the process of generating pulsed light from the light source unit 1 while sequentially moving the illuminance distribution of the transfer surface 7 to positions where the illuminance distribution of the transfer surface 7 is to be measured. It has the function of correcting the amount of change in illuminance (I I /I 0 ) above. Therefore, even if the luminance change of the light source section (light source) 1 during measurement is large, it is possible to accurately measure the illuminance distribution. The calculation unit 9 is used to calculate the illuminance ratio U I by substituting the measured value into the above equation (1).
By connecting a large number of memories to the calculation unit 9, it is possible to change the reference point of the illuminance distribution. In other words, the output values of the detectors 4 and 8 at each measurement point are stored in the memory, and after the measurement is completed, S I , I I at any position X I that you want to use as a reference can be calculated as follows:
By substituting S 0 and I 0 in equation (1), the illuminance ratio U I at each point except X I can be calculated.
本例では、平面ミラー3を通過した位置で光源
部1の輝度をモニターしており、マスク面5の影
響を全く受けないので、基準光量検出器4の出力
を用いて、転写時の露光量を制御することもでき
る。 In this example, the brightness of the light source section 1 is monitored at a position passing through the plane mirror 3, and is not affected by the mask surface 5 at all, so the output of the reference light amount detector 4 is used to determine the exposure amount during transfer. can also be controlled.
第2図は第1図に示した例を改良した本発明の
一実施例の構成を示す図である。転写面7に2個
の検出器4および8を配置し、一方を固定して基
準光量検出器4とし、他方を可動式として転写面
光量検出器8とすれば、第1図に示した例の場合
と同等の機能を有することになる。特にこの場
合、平面ミラー3は全く透過しない高反射ミラー
でよい。 FIG. 2 is a diagram showing the configuration of an embodiment of the present invention that is an improvement on the example shown in FIG. 1. If two detectors 4 and 8 are arranged on the transfer surface 7, one is fixed and serves as the reference light amount detector 4, and the other is movable and serves as the transfer surface light amount detector 8, the example shown in FIG. 1 is obtained. It will have the same functionality as in the case of . Particularly in this case, the plane mirror 3 may be a highly reflective mirror that does not transmit any light.
なお、基準光量検出器4の位置は、上記2つの
実施例に示された位置以外でも、光源のパルス光
の強度をモニターできる位置であれば、どこでも
良いことはもちろんである。 It goes without saying that the reference light amount detector 4 may be located at any position other than those shown in the above two embodiments as long as it can monitor the intensity of the pulsed light from the light source.
さらに、上記2つの実施例では、投影光学系を
用いた半導体露光装置を示してあるが、コンタク
ト方法、あるいはプロキシミテイ方法を用いた半
導体露光装置でも可能である。 Further, in the above two embodiments, a semiconductor exposure apparatus using a projection optical system is shown, but a semiconductor exposure apparatus using a contact method or a proximity method is also possible.
<効果>
本発明は、以上説明したように、転写面の照度
分布を測定する際に転写面に沿つて平行に移動す
る転写光量検出器の他に、光源からの照射エネル
ギーの変化をモニターする為の基準光量検出器を
配置することにより、光源から発せられる各パル
ス光の光強度の変化にかかわらず、正しい照度分
布を測定することができる。<Effects> As described above, the present invention uses a transfer light amount detector that moves parallel to the transfer surface when measuring the illuminance distribution on the transfer surface, as well as a transfer light amount detector that monitors changes in the irradiation energy from the light source. By arranging a reference light amount detector for this purpose, it is possible to measure the correct illuminance distribution regardless of changes in the light intensity of each pulsed light emitted from the light source.
第1図は本発明に関わる装置の一例を示す図、
第2図は第1図に示した例を改良した本発明の一
実施例の構成を示す図である。
1……光源(部)、4……基準光量検出器、7
……転写面、8……転写面光量検出器、9……演
算部。
FIG. 1 is a diagram showing an example of a device related to the present invention;
FIG. 2 is a diagram showing the configuration of an embodiment of the present invention that is an improvement on the example shown in FIG. 1. 1...Light source (part), 4...Reference light amount detector, 7
... Transfer surface, 8 ... Transfer surface light amount detector, 9 ... Calculation section.
Claims (1)
た平面に投影する投影露光装置において、前記平
面に沿つた相異なる位置で前記投影光学系により
投影された光の一部を受光して各位置での光強度
を検出するよう前記平面に沿つて移動する第1光
検出手段と、該第1光検出手段により前記各位置
で前記一部の光を受光している間、前記投影光学
系により投影された光の他の所定部分を受光して
該所定部分の光強度を検出するよう定位置に配し
た第2光検出手段と、前記第1及び第2光検出手
段による各検出に基づいて、前記投影光学系によ
り投影された光の強度変化による誤差を補正して
前記平面の照度分布を検出する手段とを有するこ
とを特徴とする投影露光装置。1. In a projection exposure apparatus that projects light from an illumination system onto a predetermined plane using a projection optical system, a portion of the light projected by the projection optical system is received at different positions along the plane, and a portion of the light projected by the projection optical system is received at each position. a first light detection means that moves along the plane so as to detect the light intensity at the projection optical system; a second light detection means arranged at a fixed position to receive another predetermined portion of the projected light and detect the light intensity of the predetermined portion; and based on each detection by the first and second light detection means. . A projection exposure apparatus comprising: means for correcting errors due to changes in intensity of light projected by the projection optical system and detecting illuminance distribution on the plane.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59022892A JPS60168026A (en) | 1984-02-13 | 1984-02-13 | Method and device for measuring illuminance distribution |
US07/198,587 US4799791A (en) | 1984-02-13 | 1988-05-23 | Illuminance distribution measuring system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59022892A JPS60168026A (en) | 1984-02-13 | 1984-02-13 | Method and device for measuring illuminance distribution |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60168026A JPS60168026A (en) | 1985-08-31 |
JPH049448B2 true JPH049448B2 (en) | 1992-02-20 |
Family
ID=12095307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59022892A Granted JPS60168026A (en) | 1984-02-13 | 1984-02-13 | Method and device for measuring illuminance distribution |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60168026A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0652699B2 (en) * | 1984-09-13 | 1994-07-06 | 株式会社ニコン | Exposure equipment |
JPS62152433U (en) * | 1986-03-19 | 1987-09-28 | ||
JP2571054B2 (en) * | 1987-04-28 | 1997-01-16 | キヤノン株式会社 | Exposure apparatus and element manufacturing method |
JP4641873B2 (en) * | 2005-06-22 | 2011-03-02 | 小糸工業株式会社 | Luminescent state measuring device |
-
1984
- 1984-02-13 JP JP59022892A patent/JPS60168026A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60168026A (en) | 1985-08-31 |
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