JPH0491508A - Surface acoustic wave device and manufacture thereof - Google Patents
Surface acoustic wave device and manufacture thereofInfo
- Publication number
- JPH0491508A JPH0491508A JP20875490A JP20875490A JPH0491508A JP H0491508 A JPH0491508 A JP H0491508A JP 20875490 A JP20875490 A JP 20875490A JP 20875490 A JP20875490 A JP 20875490A JP H0491508 A JPH0491508 A JP H0491508A
- Authority
- JP
- Japan
- Prior art keywords
- comb
- acoustic wave
- surface acoustic
- conductor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000000992 sputter etching Methods 0.000 claims abstract description 3
- 230000005284 excitation Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000001902 propagating effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
弾性表面波デバイスに関し、
弾性表面波デバイス、とくに、多電極構成の弾性表面波
フィルタの接地導線数を低減することにより、作業工数
を削減し、かつ、製品の信顛性を向上するすることを目
的とし、
圧電体基板上に少なくとも複数の櫛型入力電極と複数の
櫛型出力電極を交互に配列した多電極構成の弾性表面波
デバイスにおいて、前記櫛型入力電極と櫛型出力電極の
各接地側電極端子パッドの全てを１つの接続用導体で連
結し、前記接続用導体から接地するように弾性表面波デ
バイスおよびその製造方法を構成する。[Detailed Description of the Invention] [Summary] Regarding a surface acoustic wave device, by reducing the number of ground conductors of a surface acoustic wave device, especially a multi-electrode surface acoustic wave filter, the number of work steps can be reduced, and the product can be improved. In a surface acoustic wave device having a multi-electrode configuration in which at least a plurality of comb-shaped input electrodes and a plurality of comb-shaped output electrodes are alternately arranged on a piezoelectric substrate, the comb-shaped The surface acoustic wave device and its manufacturing method are configured such that all of the ground-side electrode terminal pads of the input electrode and the comb-shaped output electrode are connected by one connecting conductor, and the connecting conductor is grounded.
本発明は弾性表面波デバイス、とくに、多電極構成の弾
性表面波フィルタの接地導線の引き出し構成の改良に関
する。The present invention relates to a surface acoustic wave device, and particularly to an improvement in the lead-out configuration of a ground conductor of a surface acoustic wave filter having a multi-electrode configuration.
最近、自動車電話や携帯電話など高周波数帯で使用され
るフィルタに多電極構成の弾性表面波フィルタが注目さ
れるようになり、その小形化にともなって素子構成の簡
略化による作業工数の削減とデバイスとしての信頼性の
向上が益々重要になってきている。Recently, surface acoustic wave filters with multi-electrode configurations have been attracting attention as filters used in high frequency bands such as car phones and mobile phones, and with their miniaturization, the number of man-hours can be reduced by simplifying the element configuration. Improving the reliability of devices is becoming increasingly important.
弾性表面波デバイス、たとえば、弾性表面波フィルタは
、電気−機械結合係数が大きく、シかも周波数の温度係
数が比較的小さい圧電体基板、たとえば、３６゛回転Ｙ
カットーＸ伝播ＬｉＴａ０ｚ（３６゜Ｙ Ｘ ＬｉＴ
ａ０ｔ）単結晶基板の上に、八１などからなる入力用お
よび出力用の櫛型電極を設けた３端子あるいは４端子型
素子である。A surface acoustic wave device, for example a surface acoustic wave filter, is a piezoelectric substrate having a large electro-mechanical coupling coefficient and a relatively small temperature coefficient of frequency, for example, a 36° rotation Y.
Cut-X propagation LiTa0z (36°Y
a0t) It is a 3-terminal or 4-terminal type device in which comb-shaped electrodes for input and output, such as 81, are provided on a single crystal substrate.
櫛型電極（すだれ状電極とも呼ばれる）の櫛歯。The comb teeth of a comb-shaped electrode (also called a blind electrode).
すなわち、電極指の巾（し）、電橋指間のスペース（Ｓ
）、電極指間ピッチ（Ｐ）は表面波の波長をλとしたと
、通常、Ｌ ＝Ｓ ＝λ／４．Ｐ＝λ／２といった設計
値のものが多い。たとえば、中心周波数８３６ＭＨｚを
得るためには、前記基板１のＸ伝播表面波の音速４０９
０ｍ／ｓからλ＝４．８μｍが算出され、電極ピッチは
２．４μｍ、電極巾および電極間隔は１．２ μｍとい
った値となる。In other words, the width of the electrode fingers, the space between the bridge fingers (S
), the pitch between electrode fingers (P) is usually L = S = λ/4, where λ is the wavelength of the surface wave. Many have a design value such as P=λ/2. For example, in order to obtain a center frequency of 836 MHz, the sound velocity of the X-propagating surface wave of the substrate 1 must be 409 MHz.
From 0 m/s, λ=4.8 μm is calculated, the electrode pitch is 2.4 μm, and the electrode width and electrode spacing are 1.2 μm.
通常、入力用および出力用の櫛型電極の一組を対面させ
た構成のものが多いが、用途によってたとえば、自動車
電話や携帯電話などの分野では低損失（たとえば、挿入
損失：３〜５ ｄＢ以下）。Usually, there are many configurations in which a pair of comb-shaped electrodes for input and output face each other, but depending on the application, for example, in fields such as car phones and mobile phones, low loss (for example, insertion loss: 3 to 5 dB) is used. below).
広帯域（たとえば、中心周波数：８３６ＭＨｚ以上で通
過帯域中： ２５ＭＨｚ以上）、抑圧度の優れた（たと
えば帯域外減衰量＝２４〜２５ｄＢ）弾性表面波フィル
タが要求されるようになっている。There is a growing demand for surface acoustic wave filters with a wide band (eg, center frequency: 836 MHz or higher, passband: 25 MHz or higher) and excellent suppression (eg, out-of-band attenuation = 24 to 25 dB).
このような性能を満たすために種々の方法が提案されて
いるが、その代表的なものに多電極構成の弾性表面波フ
ィルタがある（たとえば、−几ｅｗｉｓ、１９８２ Ｕ
ｌｔｒａｓｏｎｉｃｓ Ｓｙｍｐｏｓｉｕｍ Ｐｒｏｃ
ｅｅｄｉｎｇｓ、Ｐ１２参照）。Various methods have been proposed to meet such performance, and a typical example is a surface acoustic wave filter with a multi-electrode configuration (for example, - Ewis, 1982 U
ltrasonics Symposium Proc
see eedings, p. 12).
第３図は従来の多電極構成型フィルタ素子の電極配置例
を示す図で、５人カー４出力の場合である。図中、１０
゛ はフィルタ素子で、たとえば、３６”ｌ −Ｉ Ｌ
ｉＴａＯ３単結晶からなる圧電体基板ｌの上に櫛型入力
！掻２、櫛型出力電極３を交互に配列して多電極構成、
たとえば、入力側が５段、出力側が４段に構成し、各信
号側電極指を接続してそれぞれ入力端子パッド２５およ
び出力端子パッド３５によって外部回路に接続される。FIG. 3 is a diagram showing an example of the electrode arrangement of a conventional multi-electrode filter element, in the case of a five-person car with four outputs. In the figure, 10
゛ is a filter element, for example, 36”l −I L
Comb-shaped input on a piezoelectric substrate l made of iTaO3 single crystal! A multi-electrode configuration in which the combs 2 and comb-shaped output electrodes 3 are arranged alternately;
For example, the input side has five stages and the output side has four stages, and each signal side electrode finger is connected to an external circuit through an input terminal pad 25 and an output terminal pad 35, respectively.
なお、図では示してないが必要により両側に反射器を設
けて特性の改善を図る場合もある。Note that although not shown in the figure, reflectors may be provided on both sides to improve the characteristics if necessary.
２０および３０は櫛型入力電極２および櫛型出力電極３
それぞれの接地側電極端子パッドであり、それぞれ電気
的に独立して形成されている。20 and 30 are a comb-shaped input electrode 2 and a comb-shaped output electrode 3
These are respective ground-side electrode terminal pads, and are formed electrically independently.
これら櫛型電極および端子パッドは９通常、全て同一の
金属、たとえば、Ａ！あるいは＾１−Ｃｕ合金を蒸着し
ホトリソグラフィ技術により同時形成される。なお、入
出力電極は櫛歯電極指の交差長が等しい、いわゆる、正
規型−正規型構成の場合を示し、電極指の巾や本数は図
面の簡略化のため正確なものではなく模式的に示しであ
る。These interdigitated electrodes and terminal pads are typically all of the same metal, eg A! Alternatively, a ^1-Cu alloy is deposited and simultaneously formed by photolithography. Note that the input and output electrodes are shown in a so-called regular-regular configuration in which the intersecting lengths of the comb-like electrode fingers are equal, and the width and number of electrode fingers are not exact and are shown schematically to simplify the drawing. This is an indication.
第４図は従来の素子搭載状態の例を示す図で、図中、１
０’は前記のフィルタ素子である。１１０はパンケージ
で、たとえば、金属パッケージのステムでガラスシール
された外部引き出し端子１０１，１０２が金属ベース１
００に植設されている。なお、金属キャップは図面簡略
化のため省略しである。FIG. 4 is a diagram showing an example of a conventional element mounting state, and in the figure, 1
0' is the filter element described above. 110 is a pan cage, for example, external lead terminals 101 and 102 sealed with glass by the stem of a metal package are connected to the metal base 1.
It is planted in 00. Note that the metal cap is omitted to simplify the drawing.
フィルタ素子１０’ はその圧電体基板１の底面で金属
ベース１００の上に、たとえば、導電性接着材によりグ
イボンディングされる。入力端子パッド２５および出力
端子パッド３５はそれぞれ外部引き出し端子１０１およ
び１０２に、たとえば、Ａｌワイヤ１０３でボンディン
グ接続される。一方、櫛型入力電極２および櫛型出力電
極３の接地側電極端子パッド２０および３０はそれぞれ
別個に金属ベース１００に、たとえば、同様にＡｌワイ
ヤ１０４でボンディング接続されて、こ−には図示して
ない、たとえば、金属キャップを覆ってシールし多電極
構成型の弾性表面波フィルタを作製している。The filter element 10' is bonded onto the metal base 100 at the bottom surface of the piezoelectric substrate 1 using, for example, a conductive adhesive. Input terminal pad 25 and output terminal pad 35 are bonded to external lead terminals 101 and 102, respectively, by Al wire 103, for example. On the other hand, the ground-side electrode terminal pads 20 and 30 of the comb-shaped input electrode 2 and the comb-shaped output electrode 3 are separately connected to the metal base 100, for example, by similarly bonding with an Al wire 104, and are not shown in the figure. For example, a multi-electrode surface acoustic wave filter is manufactured by covering and sealing a metal cap.
しかし、上記従来の多電極構成の弾性表面波素子、たと
えば、弾性表面波フィルタでは接地側電極端子パッド２
０および３０はそれぞれ独立して配置形成されているの
で、接地のための接続、たとえば、ワイヤボンディング
はそれらの数だけ行わなければならない。とくに、電極
段数が増加するとその本数は数１０本に達することがあ
り、ボンディング工数が増大して生産性が低下するだけ
でなく歩留りおよび製品の信顛性の低下を招くという重
大な問題を生じておりその解決が必要であった。However, in the above-mentioned conventional surface acoustic wave element having a multi-electrode configuration, for example, a surface acoustic wave filter, the ground side electrode terminal pad 2
Since the numbers 0 and 30 are arranged and formed independently, the number of connections for grounding, eg, wire bonding, must be made for each number. In particular, when the number of electrode stages increases, the number can reach several tens, which causes serious problems such as an increase in bonding man-hours, which not only reduces productivity but also reduces yield and product reliability. There was a need for a solution.
〔課題を解決するための手段］
上記の課題は、圧電体基板ｌ上に少なくとも複数の櫛型
入力電極２と複数の櫛型出力電極３を交互に配列した多
電極構成の弾性表面波デバイスにおいて、前記櫛型入力
電極２と櫛型出力電極３の各接地側電極端子パッド２０
および３０の全てを１つの接続用導体４で連結し、前記
接続用導体４から接地した弾性表面波デバイスによって
解決することができる。[Means for Solving the Problem] The above problem is solved in a surface acoustic wave device having a multi-electrode configuration in which at least a plurality of comb-shaped input electrodes 2 and a plurality of comb-shaped output electrodes 3 are alternately arranged on a piezoelectric substrate l. , each ground side electrode terminal pad 20 of the comb-shaped input electrode 2 and the comb-shaped output electrode 3
and 30 are all connected by one connecting conductor 4, and a surface acoustic wave device grounded from the connecting conductor 4 can solve the problem.
このようなデバイスを具体的に構成するには、前記圧電
体基板ｌ上の少なくとも弾性表面波の励振・伝播領域と
入力端子パッド２５．出力端子パッド３５および接地側
電極端子パッド２０．３０上のコンタクトホール形成部
分を覆うようにレジスト膜をコートしたあと、全面に絶
縁層５を被覆し、前記レジスト膜をコートした領域部分
の前記絶縁層５をイオンエツチングで除去し、そこに露
出した前記レジスト膜を溶剤で除去したあと、前記接地
側電極端子パッド２０．３０上の前記絶縁層５に形成さ
れた全ての前記コンタクトホール２１．３１を連結する
ように前記絶縁層５上に連続薄膜導体からなる接続用導
体４を被着してフィルタ素子１０を形成し。To specifically configure such a device, at least the excitation/propagation area of surface acoustic waves on the piezoelectric substrate l and the input terminal pad 25. After coating a resist film so as to cover the contact hole forming portions on the output terminal pad 35 and the ground side electrode terminal pad 20.30, the entire surface is coated with an insulating layer 5, and the insulating layer 5 is applied to the area coated with the resist film. After removing the layer 5 by ion etching and removing the resist film exposed there with a solvent, all the contact holes 21.31 formed in the insulating layer 5 on the ground side electrode terminal pad 20.30 are removed. A connecting conductor 4 made of a continuous thin film conductor is deposited on the insulating layer 5 so as to connect the filter element 10.
前記接続用導体４から接地するように弾性表面波デバイ
スの製造方法を構成すればよい。The method for manufacturing a surface acoustic wave device may be configured so that the connection conductor 4 is grounded.
〔作用］
本発明によれば、接地側電極端子パット２０および３０
の全てを１つの接続用導体４で連結しであるので、接地
用の接続、たとえば、ワイヤボンディングは最低１本で
済ますことが可能になるのである。[Function] According to the present invention, the ground side electrode terminal pads 20 and 30
All of them are connected by one connecting conductor 4, so that at least one grounding connection, for example, wire bonding, is required.
第１図は本発明の実施例を示す図で、同図（イ）は平面
図、同図（ロ）はＸ−Ｘ矢視断面図、同図（ハ）はｙ−
ｙ矢視断面図である。FIG. 1 is a diagram showing an embodiment of the present invention, in which (a) is a plan view, (b) is a sectional view taken along the line
It is a y arrow sectional view.
図中、ｌは圧電体基板で、たとえば、厚さ０．５ｍｍの
３６°Ｙ−ＸＬｉＴａ０３単結晶板である。櫛型入力電
極２．櫛型出力電極３．電極端子パッドなどは全て同一
の金属、たとえば、厚さ２００ｎｍのＡ ｌ −Ｃｕで
同時形成されたもので５人カー４出力構成である。In the figure, l is a piezoelectric substrate, for example, a 36° Y-XLiTa03 single crystal plate with a thickness of 0.5 mm. Comb-shaped input electrode 2. Comb-shaped output electrode 3. All the electrode terminal pads and the like are formed simultaneously of the same metal, for example, Al-Cu with a thickness of 200 nm, and the configuration is for five people and four outputs.
５は絶縁層で、たとえば、厚さ２〜３μｍのＳｉＯ２の
スパフタ膜であり、櫛型電極指、すなわち、弾性表面波
の励振、伝播部分と入力および出力端子パッド２５およ
び３５を除く、少なくとも、接地側電極端子パッド２０
および３０の領域を含む信号ラインを全て覆うように形
成する。２１および３１は接地側電極端子パッド２０お
よび３０のそれぞれに形成された。たとえば、４０μｍ
φのコンタクトホール（ピアホール）である。４は接続
用導体で、たとえば、１〜２μｍのＡ １−Ｃｕ膜であ
り、前記コンタクトホール２１および３１の全てを埋め
て、かつ、接地側電極端子パッド２０および３０の全て
を連結するように形成したものである。Reference numeral 5 denotes an insulating layer, for example, a sputtered SiO2 film with a thickness of 2 to 3 μm, which covers at least the comb-shaped electrode fingers, that is, the surface acoustic wave excitation and propagation portion, and the input and output terminal pads 25 and 35. Ground side electrode terminal pad 20
and 30 areas to cover all the signal lines. 21 and 31 were formed on the ground side electrode terminal pads 20 and 30, respectively. For example, 40μm
It is a contact hole (pier hole) of φ. Reference numeral 4 denotes a connecting conductor, for example, a 1-2 μm A1-Cu film, which fills all of the contact holes 21 and 31 and connects all of the ground side electrode terminal pads 20 and 30. It was formed.
なお、前記の諸国面で説明したものと同等の部分につい
ては同一符号を付し、かつ、同等部分についての説明は
省略する。Note that the same reference numerals are given to the same parts as those explained in the above countries, and the explanation of the same parts will be omitted.
上記構成は、たとえば、絶縁層５を設けたくない部分に
、先ずレジストをコートしたあと全面にＳｉＯ□膜を被
着し、レジストをコートした部分だけをイオンエンチン
グしてその部分の５ｉＯｚ膜を除去してから、その部分
のレジスト膜を適当な溶剤で除去することによりコンタ
クトホール２１，３１その他弾性表面波の励振、伝播部
分や入出力端子パッドなどを形成することができる。In the above structure, for example, a resist is first coated on the part where the insulating layer 5 is not desired, and then a SiO□ film is deposited on the entire surface, and only the resist-coated part is ion-etched to remove the 5iOz film in that part. After removing the resist film, contact holes 21, 31, surface acoustic wave excitation and propagation parts, input/output terminal pads, etc. can be formed by removing the resist film in that part with a suitable solvent.
上記実施例では絶縁層５として５ｉＯｚ膜を用いたが、
これに限定されるものではなくポリイミド樹脂、たとえ
ば、感光性のポリイミド樹脂膜を用いて公知のホトリソ
グラフィ技術によって形成してもよいことは言うまでも
ない。In the above embodiment, a 5iOz film was used as the insulating layer 5, but
It goes without saying that the film is not limited to this, and may be formed using a polyimide resin, for example, a photosensitive polyimide resin film, by a known photolithography technique.
第２図は本発明実施例の素子搭載状態を示す図で、図中
、１０は前記第１図に示した本発明のフィルタ素子であ
る。FIG. 2 is a diagram showing the mounting state of the element of the embodiment of the present invention, and in the figure, 10 is the filter element of the present invention shown in FIG. 1.
なお、前記の諸国面で説明したものと同等の部分につい
ては同一符号を付し、かつ、同等部分についての説明は
省略する。Note that the same reference numerals are given to the same parts as those explained in the above countries, and the explanation of the same parts will be omitted.
本発明のフィルタ素子ＩＯでは、接地側電極端子パッド
２０および３０の全てが接続用導体４で連結されている
ので、図示したごとく接地側電極端子パッド２０および
３０は別個に金属ヘースｌＯＯに接続する必要はなく、
たとえば、２本のＡ１ワイヤ１０４でボンデイン接続す
れば充分であり、最低１本で済ますこともでき、従来例
に比較して作業性１歩留り、製品の信頼性とも大巾に改
善される。In the filter element IO of the present invention, all of the ground side electrode terminal pads 20 and 30 are connected by the connecting conductor 4, so as shown in the figure, the ground side electrode terminal pads 20 and 30 are separately connected to the metal heath lOO. There is no need,
For example, bonding with two A1 wires 104 is sufficient, or at least one wire can be used, and compared to the conventional example, workability, yield, and product reliability are greatly improved.
なお、上記実施例では５人カー４出力構成の場合につい
て示したが、その他の電極数の多段構成の場合であって
も本発明が適用できることは言うまでもない。In the above embodiment, a case of a five-person car with four outputs is shown, but it goes without saying that the present invention can be applied to other multi-stage structures with the number of electrodes.
また、櫛形信号電極の両側に反射器、たとえば、公知の
ショートストリップ型櫛型反射器を配置した場合にも本
発明が適用できる。この場合には反射器のショートバー
を接続導体４に接続するように形成すればよい。Further, the present invention can also be applied to a case where reflectors, such as known short strip type comb reflectors, are arranged on both sides of the comb-shaped signal electrode. In this case, the short bar of the reflector may be connected to the connection conductor 4.
以上述べた実施例は一例を示したもので、本発明の趣旨
に添うものである限り、使用する素材や構成、製造プロ
セスなど適宜好ましいもの、あるいはその組み合わせを
用いてもよいことは言うまでもない。The embodiments described above are merely examples, and it goes without saying that preferred materials, configurations, manufacturing processes, etc., or combinations thereof may be used as appropriate, as long as they comply with the spirit of the present invention.
［発明の効果］
以上述べたように、本発明によれば接地側電極端子パッ
ド２０および３０の全てを１つの接続用導体４で連結し
であるので、接地用の接続、たとえば、ワイヤボンディ
ングは最低１本で済ますことが可能となり作業性１歩留
りが改善され、多電極構成の弾性表面波デバイスの低価
格化と信頼性の向上に寄与するところが極めて大きい。[Effects of the Invention] As described above, according to the present invention, all of the ground side electrode terminal pads 20 and 30 are connected by one connection conductor 4, so that the ground connection, for example, wire bonding, is not possible. This makes it possible to use at least one wire, improving work efficiency and yield, which greatly contributes to lower costs and improved reliability of surface acoustic wave devices with multi-electrode configurations.
第１図は本発明の実施例を示す図、
第２図は本発明実施例の素子搭載状態を示す図、第３図
は従来の多電掻構成型フィルタ素子の電極配置例を示す
図、
第４図は従来の素子搭載状態の例を示す図である。
図において、
ｌは圧電体基板、
２は櫛型入力電極、
３は櫛型出力電極、
４は接続用導体、
５は絶縁層、
ｌＯはフィルタ素子、
２０．３０は接地側電極端子パッド、
２１．３１ はコンタクトホール、
２５は入力端子パット、
３５は出力端子パッド
１００は金属ヘース、１０３．１０４はボンディングワ
イヤ、１１０はパッケージである。
木ｆ明○実几ｆ７１１Ｆ示４図
％１図
太）ｖ：Ｆｉ３Ｉ夫施伜１０素乎悟載状肢之示す図メ
２（２１FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing an element mounting state of an embodiment of the present invention, and FIG. 3 is a diagram showing an example of electrode arrangement of a conventional multi-electro-scratch type filter element. FIG. 4 is a diagram showing an example of a conventional element mounting state. In the figure, l is a piezoelectric substrate, 2 is a comb-shaped input electrode, 3 is a comb-shaped output electrode, 4 is a connecting conductor, 5 is an insulating layer, IO is a filter element, 20.30 is a ground side electrode terminal pad, 21 .31 is a contact hole, 25 is an input terminal pad, 35 is an output terminal pad 100 which is a metal head, 103 and 104 are bonding wires, and 110 is a package. Wood f Ming ○ Actual f711F 4 figures % 1 figure thick)
2 (21
Claims (3)
電極（２）と複数の櫛型出力電極（３）を交互に配列し
た多電極構成の弾性表面波デバイスにおいて、前記櫛型
入力電極（２）と櫛型出力電極（３）の各接地側電極端
子パッド（２０，３０）の全てを１つの接続用導体（４
）で連結し、前記接続用導体（４）から接地することを
特徴とした弾性表面波デバイス。(1) In a surface acoustic wave device having a multi-electrode configuration in which at least a plurality of comb-shaped input electrodes (2) and a plurality of comb-shaped output electrodes (3) are alternately arranged on a piezoelectric substrate (1), the comb-shaped input All of the ground side electrode terminal pads (20, 30) of the electrode (2) and the comb-shaped output electrode (3) are connected to one connecting conductor (4).
) and grounded from the connecting conductor (4).
ド（２０，３０）の上を覆った絶縁層（５）の上に設け
られた連続薄膜導体からなり，かつ、前記絶縁層（５）
に設けられたコンタクトホール（２１，３１）を通して
全ての前記接地側電極端子パッド（２０，３０）を連結
することを特徴とした請求項（１）記載の弾性表面波デ
バイス。(2) The connecting conductor (4) is made of a continuous thin film conductor provided on the insulating layer (5) covering the ground side electrode terminal pad (20, 30), and the insulating layer ( 5)
2. The surface acoustic wave device according to claim 1, wherein all the ground side electrode terminal pads (20, 30) are connected through contact holes (21, 31) provided in the surface acoustic wave device.
の励振・伝播領域と入力端子パッド（２５），出力端子
パッド（３５）および接地側電極端子パッド（２０，３
０）上のコンタクトホール形成部分を覆うようにレジス
ト膜をコートしたあと、全面に絶縁層（５）を被覆し、
前記レジスト膜をコートした領域部分の前記絶縁層（５
）をイオンエッチングで除去し、そこに露出した前記レ
ジスト膜を溶剤で除去したあと、前記接地側電極端子パ
ッド（２０，３０）上の前記絶縁層（５）に形成された
全ての前記コンタクトホール（２１，３１）を連結する
ように前記絶縁層（５）上に連続薄膜導体からなる接続
用導体（４）を被着することを特徴とした請求項（１）
および（２）記載の弾性表面波デバイスの製造方法。(3) At least the surface acoustic wave excitation/propagation area on the piezoelectric substrate (1), the input terminal pad (25), the output terminal pad (35), and the ground side electrode terminal pad (20, 3)
0) After coating a resist film so as to cover the upper contact hole forming part, the entire surface is covered with an insulating layer (5),
The insulating layer (5) in the area coated with the resist film
) is removed by ion etching and the resist film exposed there is removed by a solvent, and then all the contact holes formed in the insulating layer (5) on the ground side electrode terminal pad (20, 30) are removed. Claim (1) characterized in that a connecting conductor (4) made of a continuous thin film conductor is deposited on the insulating layer (5) so as to connect (21, 31).
and (2) the method for manufacturing a surface acoustic wave device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20875490A JPH0491508A (en) | 1990-08-06 | 1990-08-06 | Surface acoustic wave device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20875490A JPH0491508A (en) | 1990-08-06 | 1990-08-06 | Surface acoustic wave device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0491508A true JPH0491508A (en) | 1992-03-25 |
Family
ID=16561528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20875490A Pending JPH0491508A (en) | 1990-08-06 | 1990-08-06 | Surface acoustic wave device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0491508A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223809A (en) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | Manufacturing method of electronic component |
| WO2010150882A1 (en) * | 2009-06-26 | 2010-12-29 | 京セラ株式会社 | Surface acoustic wave filter and branching filter using same |
| US10530330B2 (en) * | 2015-07-28 | 2020-01-07 | Murata Manufacturing Co., Ltd. | Elastic wave device |
| WO2020187811A1 (en) * | 2019-03-19 | 2020-09-24 | RF360 Europe GmbH | Dms filter, electroacoustic filter and multiplexer |
| WO2020187827A1 (en) * | 2019-03-19 | 2020-09-24 | RF360 Europe GmbH | 11-idt dms filter, electroacoustic filter and multiplexer |
-
1990
- 1990-08-06 JP JP20875490A patent/JPH0491508A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223809A (en) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | Manufacturing method of electronic component |
| WO2010150882A1 (en) * | 2009-06-26 | 2010-12-29 | 京セラ株式会社 | Surface acoustic wave filter and branching filter using same |
| CN102804600A (en) * | 2009-06-26 | 2012-11-28 | 京瓷株式会社 | Surface acoustic wave filter and branching filter using same |
| JP5100890B2 (en) * | 2009-06-26 | 2012-12-19 | 京セラ株式会社 | Surface acoustic wave filter and duplexer using the same |
| US9041487B2 (en) | 2009-06-26 | 2015-05-26 | Kyocera Corporation | Surface acoustic wave filter and duplexer using same |
| CN102804600B (en) * | 2009-06-26 | 2015-09-02 | 京瓷株式会社 | Surface acoustic wave filter and use its channel-splitting filter |
| US10530330B2 (en) * | 2015-07-28 | 2020-01-07 | Murata Manufacturing Co., Ltd. | Elastic wave device |
| WO2020187811A1 (en) * | 2019-03-19 | 2020-09-24 | RF360 Europe GmbH | Dms filter, electroacoustic filter and multiplexer |
| WO2020187827A1 (en) * | 2019-03-19 | 2020-09-24 | RF360 Europe GmbH | 11-idt dms filter, electroacoustic filter and multiplexer |
| US12009805B2 (en) | 2019-03-19 | 2024-06-11 | Rf360 Singapore Pte. Ltd. | DMS filter, electroacoustic filter and multiplexer |
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