JPH0475384A - Solid-state image sensing element - Google Patents
Solid-state image sensing elementInfo
- Publication number
- JPH0475384A JPH0475384A JP2191314A JP19131490A JPH0475384A JP H0475384 A JPH0475384 A JP H0475384A JP 2191314 A JP2191314 A JP 2191314A JP 19131490 A JP19131490 A JP 19131490A JP H0475384 A JPH0475384 A JP H0475384A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- layer
- insulating layer
- state image
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 230000007547 defect Effects 0.000 abstract description 9
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- -1 acryl Chemical group 0.000 abstract description 3
- 239000005380 borophosphosilicate glass Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
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- ZRZHXNCATOYMJH-UHFFFAOYSA-N 1-(chloromethyl)-4-ethenylbenzene Chemical compound ClCC1=CC=C(C=C)C=C1 ZRZHXNCATOYMJH-UHFFFAOYSA-N 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
この発明は、スミア不良を低減した固体撮像素子に関す
る。The present invention relates to a solid-state imaging device with reduced smear defects.
第３図は従来のＣＣＤ固体撮像素子の断面図である。
このＣＣＤ固体撮像素子は、基板ｌの表面に複数のホト
ダイオード２とこのホトダイオード２に隣接した電荷転
送領域であるＣＣＤＣ２Ｏ４形成し、そのＣＣＤＣ２Ｏ
４方にポリシリコンで形成された電荷転送用電極４．５
を設け、この電極４゜５と上記ホトダイオード２を覆う
ように絶縁層６を形成している。そして、上記絶縁層６
の上の上記ホトダイオード２のエリア以外のエリアに遮
光メタル７を形成している。FIG. 3 is a cross-sectional view of a conventional CCD solid-state image sensor. This CCD solid-state image sensor has a plurality of photodiodes 2 and a charge transfer region CCDC2O4 adjacent to the photodiodes 2 formed on the surface of a substrate l, and the CCDC2O4 is formed on the surface of a substrate l.
Charge transfer electrodes 4.5 made of polysilicon on four sides
An insulating layer 6 is formed to cover the electrode 4.5 and the photodiode 2. Then, the insulating layer 6
A light-shielding metal 7 is formed in an area other than the area of the photodiode 2 above.
ところで、ＣＣＤ固体撮像素子では従来からスミアと呼
ばれる不良症状が問題となっている。これは輝度の高い
被写体を撮像すると第４図に示すように像２０の上下に
帯状の光のスジ２１が現れる現象である。
この現象が発生するのは、第３図に示すように、斜め入
射光等により基板ｌ内のＣＣＤＣ２Ｏ４深い所に発生し
た電荷が拡散して他のＣＣＤ部に流れ込むｒ二めてあり
、光量に比例して発生する。
上記従来の構造のＣＣＤ固体撮像素子では、光が基板内
の深い所に入り込むのを防ぐことか出来なかったために
、スミア不良を低減することは非常に困難であった。
そこで、この発明の目的は、光が基板内の深い所に入り
込むのを防止することによりスミア不良を低減するよう
にした固体撮像素子を提供することにある。Incidentally, a defective symptom called smear has conventionally been a problem in CCD solid-state image sensors. This is a phenomenon in which when an object with high brightness is imaged, band-shaped light streaks 21 appear above and below the image 20, as shown in FIG. This phenomenon occurs because, as shown in Figure 3, charges generated deep within the substrate CCDC2O4 due to obliquely incident light are diffused and flow into other CCD parts, and the amount of light increases. occurs proportionately. In the CCD solid-state image pickup device having the conventional structure described above, it was only possible to prevent light from penetrating deep into the substrate, so it was extremely difficult to reduce smear defects. SUMMARY OF THE INVENTION An object of the present invention is to provide a solid-state image sensor that reduces smear defects by preventing light from penetrating deep into the substrate.
上記目的を達成するため、この発明は、複数の受光素子
と上記各受光素子に隣接した電荷転送領域とを形成した
基板上の上記各電荷転送領域の上に電荷転送用電極を形
成すると共に上記電荷転送用電極と上記受光素子を覆う
ように絶縁層を形成し、上記絶縁層の上記受光素子上の
部分の形状が凹状になっている固体撮像素子において、
上記絶縁層の上に、上記絶縁層の屈折率よりも大きい屈
折率を有する充填層を、直接あるいは上記絶縁層の屈折
率とほぼ同じ屈折率を有する中間層を介して形成したこ
とを特徴としている。In order to achieve the above object, the present invention includes forming a charge transfer electrode on each of the charge transfer regions on a substrate on which a plurality of light receiving elements and a charge transfer region adjacent to each of the light receiving elements are formed, and In a solid-state imaging device, an insulating layer is formed to cover a charge transfer electrode and the light receiving element, and a portion of the insulating layer above the light receiving element has a concave shape,
A filling layer having a refractive index greater than the refractive index of the insulating layer is formed on the insulating layer either directly or via an intermediate layer having a refractive index substantially the same as the refractive index of the insulating layer. There is.
上記構成からなる固体撮像素子は、充填層が絶縁層ある
いは中間層よりも屈折率が大きいので、上記凹状の部分
に斜めに入射した光は上記充填層から上記絶縁層あるい
は上記中間層に入るときに上記ホトダイオード側に屈折
する。
従って、基板内の深い所に到達する光量が少なくなり、
その箇所に発生する電荷が少なくなるため、他の電荷転
送領域に流れ込む電荷が少なくなり、スミア不良が低減
する。In the solid-state image sensing device having the above structure, the filling layer has a higher refractive index than the insulating layer or the intermediate layer, so that the light incident obliquely on the concave portion enters the insulating layer or the intermediate layer from the filling layer. The light is refracted toward the photodiode. Therefore, the amount of light reaching deep inside the substrate is reduced,
Since less charge is generated at that location, less charge flows into other charge transfer regions, reducing smear defects.
以下、この発明を図示の実施例により詳細に説明する。
第１図はこの発明の一実施例のＣＣＤ固体撮像素子の断
面図である。
このＣＣＤ固体撮像素子は第３図に示す従来のものを中
間層８で覆い、その中間層８の上に充填層９を設けた構
成になっている。
ここで、絶縁層６はＳｉｎ、膜あるいはＢＰＳＧ（硼素
（Ｂ）および燐（Ｐ）を含んだ５１ｏｔりなどであり、
屈折率は１．４〜１．５である。また、中間層８は上記
絶縁層６と同程度の屈折率のアクリル系樹脂で出来てお
り、充填！９は屈折率が１６〜１．７以上の材料（後述
）でてきている。
上記充填層９はホトダイオード２の上方の凹状にへこん
だ部分を充填するように形成され、しかも中間膜８や絶
縁１ｊ６よりも屈折率が大きいので、ホトダイオード２
の上方で凸レンズの作用を行う。
そのため、斜めに入射した光はホトダイオード２側に屈
折するので、ＣＣＤ部３よりも深い所に到達する光量は
少なくなり、スミア不良が低減される。
上記中間層８は上記凸レンズ作用にかかわるレンズ形状
ならびに焦点距離の調整を行うために設けられたもので
あり、絶縁膜６の厚みや形状によっては省略することが
できる。
また、第１図に示す構成だけでは凸レンズとしての焦光
作用が不足な場合は、第２図の示すようにホトダイオー
ド２の上方、充填！！９の上にマイクロレンズｌＯを形
成することも可能である。
一方、ＣＣＤ固体撮像素子は保護のためにクリアモール
ドと呼ばれる透明樹脂製のモールド体でモールドするこ
とがよく行われる。この場合、第１図に示す構成のもの
をそのままこのクリアモールドでモールドしてもその焦
光効果は変わらないが、上記マイクロレンズ１０を備え
たものをこのクリアモールドでモールドする場合には、
マイクロレンズｌＯの屈折率をクリアモールド用の透明
樹脂の屈折率よりも高いものにする必要がある。
上記透明樹脂の屈折率は１．５程度であるので、マイク
ロレンズの屈折率は、上記充填層と同じように１．６〜
１．７以上にする必要がある。
上記充填層やマイクロレンズに使用される屈折率が１．
６〜１，７以上の材料としては以下のようなものが考え
られる。
（ｉ）ポリスチレン、アクリル樹脂、ノボラック樹脂、
ポリエチレン、メタクリル酸メチル等の高分子樹脂に以
下のものを導入あるいは添加して屈折率を上げたもの
（ａ）ハロゲン原子（Ｆを除く）を導入したもの
■ハロゲン化アルキル基を導入したもの例 ポリＰ−ク
ロロメチルスチレン
■Ｈとの置換によりハロゲン化したもの例：ボリ０−ク
ロロスチレン
（ｂ）イオウ原子を導入したもの
例：ポリビニルフェニルスルフィド
（ｃ）芳香族環を導入したもの
■ベンゼン環を導入したもの
例二ポリジフェニルメチルメタクリレート■ナフタレン
環を導入したもの
例・ポリビニルナフタレン
（ｄ ）無機化合物を添加したもの
■酸化チタン、酸化インジウム、酸化スズ、酸化アルミ
ニウム等の金属酸化物を添加したもの
■窒化ケイ素等の金属酸化物以外の物を添加した物
（１１）ポリイミド（＊）、ポリエチレンテレフタレト
（＊）、ナフタレン−ホルムアルデヒド樹脂、ポリエー
テルアミド（＊）等の屈折率の高い有機化合物（但し、
＊印は充填層にのみ使用）
（ｉｉｉ）窒化ケイ素等の屈折率の高い無機化合物（但
し、充填層にのみ使用）
このように、絶縁層６をこの絶縁層６の屈折率よりも大
きい屈折率の充填層９で、直接あるいは上記絶縁層６と
同程度の屈折率の中間層８を介して覆うようにしている
ので、ホトダイオード２の上方の凹部に斜ぬに入射した
光は、上記充填層９から上記中間層８あるいは上記絶縁
層６に入る時にホトダイオード２側に屈折して、ＣＣＤ
部３の下の深い所に到達する光量が少なくなり、従って
、その場所での電荷の発生が少なくなり、スミア不良が
減少する。Hereinafter, the present invention will be explained in detail with reference to illustrated embodiments. FIG. 1 is a sectional view of a CCD solid-state image sensor according to an embodiment of the present invention. This CCD solid-state imaging device has a structure in which the conventional device shown in FIG. 3 is covered with an intermediate layer 8, and a filling layer 9 is provided on the intermediate layer 8. Here, the insulating layer 6 is made of Sin, a film, or BPSG (51ot containing boron (B) and phosphorus (P)), etc.
The refractive index is 1.4-1.5. Furthermore, the intermediate layer 8 is made of an acrylic resin with a refractive index similar to that of the insulating layer 6, and is filled! No. 9 is a material (described later) having a refractive index of 16 to 1.7 or higher. The filling layer 9 is formed so as to fill the concave portion above the photodiode 2, and has a higher refractive index than the intermediate film 8 and the insulation 1j6.
It acts as a convex lens above. Therefore, since obliquely incident light is refracted toward the photodiode 2 side, the amount of light reaching a place deeper than the CCD section 3 is reduced, and smear defects are reduced. The intermediate layer 8 is provided to adjust the lens shape and focal length related to the convex lens action, and can be omitted depending on the thickness and shape of the insulating film 6. If the focusing effect as a convex lens is insufficient with only the configuration shown in FIG. 1, fill the area above the photodiode 2 as shown in FIG. ! It is also possible to form a microlens 10 on top of 9. On the other hand, CCD solid-state image sensors are often molded with a transparent resin mold body called a clear mold for protection. In this case, even if the structure shown in FIG. 1 is molded as is with this clear mold, the focusing effect will not change, but when molding the structure with the microlens 10 described above with this clear mold,
It is necessary to make the refractive index of the microlens IO higher than the refractive index of the transparent resin for the clear mold. Since the refractive index of the above-mentioned transparent resin is about 1.5, the refractive index of the microlens is 1.6-1.6 like the above-mentioned filling layer.
It needs to be 1.7 or higher. The refractive index used for the above-mentioned filling layer and microlens is 1.
The following materials can be considered as materials with a number of 6 to 1,7 or more. (i) polystyrene, acrylic resin, novolak resin,
Polymer resins such as polyethylene and methyl methacrylate that have their refractive index increased by introducing or adding the following: (a) Products that have halogen atoms (excluding F) introduced ■ Examples of products that have introduced halogenated alkyl groups Poly-P-chloromethylstyrene ■ Halogenated by substitution with H Example: Poly-0-chlorostyrene (b) Introduced sulfur atom Example: Polyvinylphenyl sulfide (c) Introduced aromatic ring ■ Benzene ring Example 2: Polydiphenylmethyl methacrylate ■Example: polyvinylnaphthalene (d) where a naphthalene ring is introduced ■Those with added inorganic compounds ■Added with metal oxides such as titanium oxide, indium oxide, tin oxide, aluminum oxide, etc. Items Added with substances other than metal oxides such as silicon nitride (11) Organic materials with high refractive index such as polyimide (*), polyethylene terephthalate (*), naphthalene-formaldehyde resin, polyetheramide (*) Compounds (however,
(* mark is used only for the filling layer) (iii) Inorganic compound with a high refractive index such as silicon nitride (However, used only for the filling layer) In this way, the insulating layer 6 is Since the photodiode 2 is covered with a filling layer 9 having a similar refractive index either directly or via an intermediate layer 8 having a refractive index similar to that of the insulating layer 6, light that obliquely enters the concave portion above the photodiode 2 does not pass through the filling layer 9. When entering the intermediate layer 8 or the insulating layer 6 from the layer 9, it is refracted toward the photodiode 2 side, and the CCD
The amount of light reaching the deep part under the portion 3 is reduced, and therefore less charge is generated at that location, reducing smear defects.
以上より明らかなように、この発明の固体撮像素子は、
複数の受光素子と、上記各受光素子に隣接した電荷転送
領域の上に設けられた電荷転送用電極とを覆うように形
成され、上記受光素子上の部分の形状が凹状になってい
る絶縁層の上に、上記絶縁層の屈折率よりも大きい屈折
率を有する充填層を、直接あるいは上記絶縁層の屈折率
とほぼ同じ屈折率を有する中間層を介して形成している
ので、上記凹状の部分に斜めに入射した光は上記受光素
子側に屈折して、基板内の上記電荷転送領域よりも深い
所に到達する光量が少なくなり、その箇所に発生する電
荷が少なくなるため、他の電荷転送領域に流れ込む電荷
が少なくなり、スミア不良が低減する。As is clear from the above, the solid-state image sensor of the present invention is
an insulating layer formed to cover a plurality of light receiving elements and a charge transfer electrode provided on a charge transfer region adjacent to each of the light receiving elements, and having a concave shape in a portion above the light receiving element; A filling layer having a refractive index larger than the refractive index of the insulating layer is formed directly or via an intermediate layer having a refractive index almost the same as that of the insulating layer. Light that is obliquely incident on the area is refracted toward the photodetector, and the amount of light that reaches a location deeper than the charge transfer region in the substrate is reduced, and the amount of charge generated at that location is reduced, so that other charges are Less charge flows into the transfer region, reducing smear defects.
第１図はこの発明の一実施例のＣＣＤ固体撮像素子の断
面図、第２図は上記ＣＣＤ固体撮像素子にマイクロレン
ズを形成した状態を示す断面図、第３図は従来のＣＣＤ
固体撮像素子におけるスミア発生の原理を説明する断面
図、第４図はスミア現象を説明する図である。
ｌ・・・基板、２・・・ホトダイオード、３・・・ＣＣ
Ｄ部、４、５・・電荷転送用電極、６・・絶縁層、７・
・・遮光メタル、８・・・中間層、９ ・充填層、ＩＯ
・・マイクロレンズ。FIG. 1 is a cross-sectional view of a CCD solid-state image sensor according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a state in which a microlens is formed on the CCD solid-state image sensor, and FIG. 3 is a cross-sectional view of a conventional CCD image sensor.
FIG. 4 is a cross-sectional view illustrating the principle of smear generation in a solid-state image sensor, and is a diagram illustrating the smear phenomenon. l...Substrate, 2...Photodiode, 3...CC
D section, 4, 5... Electrode for charge transfer, 6... Insulating layer, 7...
... Light-shielding metal, 8 ... Intermediate layer, 9 - Filling layer, IO
...Micro lens.
Claims (1)
転送領域とを形成した基板上の上記各電荷転送領域の上
に電荷転送用電極を形成すると共に上記電荷転送用電極
と上記受光素子を覆うように絶縁層を形成し、上記絶縁
層の上記受光素子上の部分の形状が凹状になっている固
体撮像素子において、 上記絶縁層の上に、上記絶縁層の屈折率よりも大きい屈
折率を有する充填層を、直接あるいは上記絶縁層の屈折
率とほぼ同じ屈折率を有する中間層を介して形成したこ
とを特徴とする固体撮像素子。(1) A charge transfer electrode is formed on each of the charge transfer regions on a substrate having a plurality of light receiving elements and a charge transfer region adjacent to each of the light receiving elements, and the charge transfer electrode and the light receiving element are connected to each other. In a solid-state image sensing device, an insulating layer is formed to cover the light-receiving element, and a portion of the insulating layer above the light receiving element has a concave shape. What is claimed is: 1. A solid-state image sensor, comprising: a filling layer having a refractive index formed directly or via an intermediate layer having a refractive index substantially the same as that of the insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2191314A JPH0475384A (en) | 1990-07-17 | 1990-07-17 | Solid-state image sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2191314A JPH0475384A (en) | 1990-07-17 | 1990-07-17 | Solid-state image sensing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0475384A true JPH0475384A (en) | 1992-03-10 |
Family
ID=16272498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2191314A Pending JPH0475384A (en) | 1990-07-17 | 1990-07-17 | Solid-state image sensing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0475384A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06125070A (en) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| EP1414070A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Image sensor having concave-shaped micro-lenses |
| EP1414071A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Method for forming an image sensor having concave-shaped micro-lenses |
| WO2008143095A1 (en) * | 2007-05-17 | 2008-11-27 | Nissan Chemical Industries, Ltd. | Photosensitive resin and process for producing microlens |
-
1990
- 1990-07-17 JP JP2191314A patent/JPH0475384A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06125070A (en) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| EP1414070A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Image sensor having concave-shaped micro-lenses |
| EP1414071A2 (en) * | 2002-10-25 | 2004-04-28 | Hua Wei Semiconductor (Shanghai) Co., Ltd | Method for forming an image sensor having concave-shaped micro-lenses |
| EP1414070A3 (en) * | 2002-10-25 | 2005-08-10 | OmniVision International Holding Ltd | Image sensor having concave-shaped micro-lenses |
| EP1414071A3 (en) * | 2002-10-25 | 2005-08-24 | OmniVision International Holding Ltd | Method for forming an image sensor having concave-shaped micro-lenses |
| WO2008143095A1 (en) * | 2007-05-17 | 2008-11-27 | Nissan Chemical Industries, Ltd. | Photosensitive resin and process for producing microlens |
| US8940470B2 (en) | 2007-05-17 | 2015-01-27 | Nissan Chemical Industries, Inc. | Photosensitive resin and process for producing microlens |
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