JPH0475341A - Method and apparatus for cleaning semiconductor substrate - Google Patents
Method and apparatus for cleaning semiconductor substrateInfo
- Publication number
- JPH0475341A JPH0475341A JP18806590A JP18806590A JPH0475341A JP H0475341 A JPH0475341 A JP H0475341A JP 18806590 A JP18806590 A JP 18806590A JP 18806590 A JP18806590 A JP 18806590A JP H0475341 A JPH0475341 A JP H0475341A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- cleaning liquid
- semiconductor substrate
- tank
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 215
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 109
- 238000005507 spraying Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 9
- 229920001296 polysiloxane Polymers 0.000 abstract 2
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体基板洗浄方法の改良、特に、洗浄効率を向上する
改良に関し、
スルーブツトが高く、しかも、洗浄効果の高い半導体基
板の洗浄方法を提供することを目的とし、複数枚の半導
体基板をオーバーフロー式洗浄槽内に装入し、この洗浄
槽の底面に設けられた洗浄液供給口より洗浄液を供給し
て前記の半導体基板を洗浄する半導体基板洗浄方法にお
いて、前記の洗浄槽内に発生する洗浄液のよどみ部に洗
浄液を噴射するか、超音波を照射するか、または、超音
波の印加された洗浄液を噴射するように構成する。[Detailed Description of the Invention] [Summary] Regarding improvements in semiconductor substrate cleaning methods, particularly improvements that improve cleaning efficiency, an object of the present invention is to provide a semiconductor substrate cleaning method that has a high throughput and is highly effective in cleaning. In the semiconductor substrate cleaning method, the semiconductor substrates are cleaned by loading a plurality of semiconductor substrates into an overflow type cleaning tank and supplying a cleaning liquid from a cleaning liquid supply port provided at the bottom of the cleaning tank to clean the semiconductor substrates. The system is configured to inject cleaning liquid, irradiate ultrasonic waves, or inject cleaning liquid to which ultrasonic waves are applied to a stagnation area of cleaning liquid generated in the tank.
本発明は、半導体基板洗浄方法及び洗浄装置の改良、特
に、洗浄効率を向上する改良に関する。The present invention relates to improvements in semiconductor substrate cleaning methods and cleaning equipment, and particularly to improvements that improve cleaning efficiency.
〔従来の技術]
半導体集積回路の微細化、高集積化に伴い、半導体集積
回路の製造に使用される半導体基板は、パーティクルや
メタル等によって汚染されていないことが強く望まれる
。そのため、半導体基板に付着している汚染物を除去す
るために半導体基板洗浄装置が使用されるが、従来の半
導体基板洗浄装置の構成図を第5図に示す。オーバーフ
ロー式洗浄槽1の中に基板支持治具6に支持された複数
枚の半導体基板5を装入し、洗浄槽1の底面に設けられ
た洗浄液供給口2から洗浄液を供給して洗浄槽1の上部
からオーバーフローさせ、半導体基板5を洗浄するもの
である。[Prior Art] As semiconductor integrated circuits become smaller and more highly integrated, it is strongly desired that semiconductor substrates used in the manufacture of semiconductor integrated circuits be free from contamination with particles, metals, and the like. For this reason, a semiconductor substrate cleaning apparatus is used to remove contaminants adhering to the semiconductor substrate, and a configuration diagram of a conventional semiconductor substrate cleaning apparatus is shown in FIG. A plurality of semiconductor substrates 5 supported by a substrate support jig 6 are loaded into an overflow type cleaning tank 1, and a cleaning liquid is supplied from a cleaning liquid supply port 2 provided at the bottom of the cleaning tank 1. The liquid overflows from the upper part of the semiconductor substrate 5 to clean the semiconductor substrate 5.
この外、洗浄効果を高めるために、超音波の印加された
洗浄液を半導体基板に直接噴射する洗浄方法及び洗浄装
置が特開平1−9552]公報に記載されている。この
洗浄方法及び洗浄装置は、半導体基板を1枚づ一洗浄槽
内に装入し、超音波の印加された洗浄液を直接半導体基
板に噴射して汚染物を除去するものである。In addition, Japanese Patent Laid-Open No. 1-9552 describes a cleaning method and a cleaning apparatus in which a cleaning liquid to which ultrasonic waves are applied is directly injected onto a semiconductor substrate in order to improve the cleaning effect. In this cleaning method and apparatus, semiconductor substrates are loaded one by one into a cleaning tank, and a cleaning liquid to which ultrasonic waves are applied is directly sprayed onto the semiconductor substrates to remove contaminants.
第5図に示す洗浄装置においては、洗浄槽1の底面に設
けられた洗浄液供給口2から供給される洗浄液は、洗浄
槽1内において層流とはならず、乱流が発生するため、
一部類域に洗浄液のよどみ部7・8が発生する。このよ
どみ部7・8においては、常に同じ洗浄液が循環してお
り、洗浄液供給口2から供給される新しい洗浄液と置換
されることがないため、半導体基板5から折角離脱した
汚染物が再び半導体基板5に付着してしまい、洗浄効果
が低下するという欠点がある。In the cleaning device shown in FIG. 5, the cleaning liquid supplied from the cleaning liquid supply port 2 provided at the bottom of the cleaning tank 1 does not form a laminar flow in the cleaning tank 1, but a turbulent flow occurs.
Stagnant parts 7 and 8 of the cleaning liquid occur in one category area. In these stagnation parts 7 and 8, the same cleaning liquid is always circulating and is not replaced with a new cleaning liquid supplied from the cleaning liquid supply port 2, so that the contaminants that have been taken off from the semiconductor substrate 5 are returned to the semiconductor substrate. 5, which has the disadvantage that the cleaning effect is reduced.
また、特開平1−9552]公報に記載されている洗浄
方法及び洗浄装置においては、半導体基板に超音波の印
加された洗浄液を直接噴射するので、洗浄効果の向上は
期待できるが、半導体基板を1枚づ\洗浄しなければな
らないためスルーブツトが低く、洗浄に膨大な時間がか
−るという欠点がある。Furthermore, in the cleaning method and apparatus described in JP-A-1-9552, the cleaning liquid to which ultrasonic waves have been applied is directly injected onto the semiconductor substrate, so an improvement in the cleaning effect can be expected; Since each sheet must be washed one by one, the throughput is low and cleaning takes a huge amount of time.
本発明の目的は、この欠点を解消することにあり、二つ
の独立した目的を有する。The purpose of the present invention is to overcome this drawback and has two independent objectives.
第1の目的は、スルーブツトが高く、しかも、洗浄効果
の高い半導体基板の洗浄方法を提供することにある。The first object is to provide a method for cleaning semiconductor substrates that has a high throughput and a high cleaning effect.
第2の目的は、その洗浄方法に使用される洗浄装置を提
供することにある。A second object is to provide a cleaning device for use in the cleaning method.
上記二つの目的のうち、第1の目的は、下記いずれの手
段によっても達成される。Of the above two objectives, the first objective can be achieved by any of the following means.
第1の手段は、複数枚の半導体基板(5)をオーバーフ
ロー式洗浄槽(1)内に装入し、この洗浄槽(1)の底
面に設けられた洗浄液供給口(2)より洗浄液を供給し
て前記の半導体基板(5)を洗浄する半導体基板洗浄方
法において、前記の洗浄槽(1)内に発生する洗浄液の
よどみ部(7・8)に洗浄液を噴射する半導体基板洗浄
方法である。The first method is to load a plurality of semiconductor substrates (5) into an overflow type cleaning tank (1), and supply cleaning liquid from a cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1). In this semiconductor substrate cleaning method, the semiconductor substrate (5) is cleaned by injecting the cleaning liquid into the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).
第2の手段は、前記の洗浄槽(1)内に発生する洗浄液
のよどみ部(7・8)に超音波を照射する半導体基板洗
浄方法である。The second method is a semiconductor substrate cleaning method in which ultrasonic waves are irradiated to the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).
第3の手段は、前記の洗浄槽(1)内に発生する洗浄液
のよどみ部(7・8)に超音波の印加された洗浄液を噴
射する半導体基板洗浄方法である。The third means is a semiconductor substrate cleaning method in which a cleaning liquid to which ultrasonic waves have been applied is injected into the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).
上記二つの目的のうち、第2の目的は、下記いずれの手
段によっても達成される。Of the above two objectives, the second objective can be achieved by any of the following means.
第1の手段は、底面に洗浄液供給口(2)を有するオー
バーフロー式洗浄槽(1)と、この洗浄槽(1)内に供
給される洗浄液のよどみ部(7・8)に洗浄液を噴射す
る洗浄液噴射手段(3・4)とを有する半導体基板洗浄
装置である。The first means is to inject cleaning liquid into an overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom and into stagnation parts (7 and 8) of the cleaning liquid supplied into this cleaning tank (1). This is a semiconductor substrate cleaning apparatus having cleaning liquid spraying means (3, 4).
第2の手段は、底面に洗浄液供給口(2)を有するオー
バーフロー式洗浄槽(1)と、この洗浄槽(1)内に供
給される洗浄液のよどみ部(7・8)に超音波を照射す
る超音波照射手段(9・10)とを有する半導体基板洗
浄装置である。The second method is to irradiate an overflow type cleaning tank (1) with a cleaning liquid supply port (2) on the bottom and stagnation parts (7, 8) of the cleaning liquid supplied in this cleaning tank (1) with ultrasonic waves. This is a semiconductor substrate cleaning apparatus having ultrasonic irradiation means (9, 10).
第3の手段は、底面に洗浄液供給口(2)を有するオー
バーフロー式洗浄槽(1)と、この洗浄槽(1)内に供
給される洗浄液のよどみ部(7・8)に超音波の印加さ
れた洗浄液を噴射する超音波・洗浄液噴射手段(11・
12)とを有する半導体基板洗浄装置である。The third means is to apply ultrasonic waves to an overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom and to the stagnation parts (7 and 8) of the cleaning liquid supplied in this cleaning tank (1). Ultrasonic/cleaning liquid spraying means (11.
12).
〔作用]
本発明に係る半導体基板洗浄方法及び洗浄装置において
は、洗浄槽内に発生する洗浄液のよどみ部に、洗浄液を
噴射するか、超音波を噴射するか、または、超音波の印
加された洗浄液を噴射することによって、よどみ部が拡
散して消滅し、半導体基板表面には常に新しい洗浄液が
供給されるので、半導体基板から離脱した汚染物は再付
着することなく、洗浄液によって洗浄槽外に運ばれ、除
去される。[Function] In the semiconductor substrate cleaning method and cleaning apparatus according to the present invention, the cleaning liquid is injected into the stagnation part of the cleaning liquid generated in the cleaning tank, the ultrasonic wave is injected, or the ultrasonic wave is applied. By spraying the cleaning liquid, the stagnation area is diffused and disappears, and new cleaning liquid is always supplied to the surface of the semiconductor substrate, so that the contaminants that have separated from the semiconductor substrate are removed from the cleaning tank by the cleaning liquid without being attached again. carried and removed.
洗浄槽内に複数枚の半導体基板が装入されていても、隣
接する2枚の半導体基板間に発生するすべてのよどみ部
に洗浄液を噴射するか、超音波を噴射するか、または、
超音波の印加された洗浄液を噴射することによって、す
べてのよどみ部を拡散・消滅させることができるので、
複数枚の半導体基板を同時に洗浄する場合にも洗浄効果
を高めることができる。なお、複数枚の半導体基板を同
時に洗浄する従来の洗浄装置に洗浄液噴射手段、超音波
照射手段、または、超音波・洗浄液噴射手段を追加して
設けて洗浄効果を高めることも可能である。Even if a plurality of semiconductor substrates are loaded into the cleaning tank, it is necessary to spray cleaning liquid or ultrasonic waves to all the stagnation areas that occur between two adjacent semiconductor substrates, or
By spraying the cleaning liquid to which ultrasonic waves have been applied, all stagnation can be diffused and eliminated.
The cleaning effect can also be enhanced when multiple semiconductor substrates are cleaned at the same time. Note that it is also possible to enhance the cleaning effect by adding a cleaning liquid spraying means, an ultrasonic irradiation means, or an ultrasonic/cleaning liquid spraying means to a conventional cleaning apparatus that cleans a plurality of semiconductor substrates at the same time.
[実施例〕
以下、図面を参照しつ一1本発明の六つの実施例に係る
半導体基板洗浄方法及び洗浄装置について説明する。[Embodiments] Hereinafter, semiconductor substrate cleaning methods and cleaning apparatuses according to six embodiments of the present invention will be described with reference to the drawings.
里上班
第1図参照
第1図は、本発明に係る半導体基板洗浄装置の構成図で
ある。図において、1は底面に洗浄液供給口2を有する
オーバーフロー式洗浄槽であり、3.4はよどみ部7・
8に洗浄液を噴射するノズル等からなる洗浄液噴射手段
である。See Satogami Group, Figure 1. Figure 1 is a block diagram of a semiconductor substrate cleaning apparatus according to the present invention. In the figure, 1 is an overflow type cleaning tank having a cleaning liquid supply port 2 on the bottom, and 3.4 is a stagnation part 7.
8 is a cleaning liquid injection means consisting of a nozzle and the like that injects cleaning liquid.
複数枚の半導体基板5を支持した基板支持治具6を洗浄
槽1内に装入し、洗浄液を洗浄液供給口2から洗浄槽1
内に供給して上端よりオーバーフローさせ、半導体基板
5を洗浄する。この時、洗浄fil内に発生する洗浄液
のよどみ部7・8に、洗浄液噴射手段3・4を使用して
それぞれ洗浄液を噴射してよどみ部7・8を拡散させ、
半導体基板5に常に新しい洗浄液が接触するようにする
。A substrate support jig 6 supporting a plurality of semiconductor substrates 5 is inserted into the cleaning tank 1, and the cleaning liquid is supplied from the cleaning liquid supply port 2 to the cleaning tank 1.
The semiconductor substrate 5 is cleaned by supplying the liquid to the inside and overflowing from the upper end. At this time, the cleaning liquid is sprayed onto the cleaning liquid stagnation parts 7 and 8 generated in the cleaning filter using the cleaning liquid injection means 3 and 4, respectively, to diffuse the stagnation parts 7 and 8,
A new cleaning solution is always brought into contact with the semiconductor substrate 5.
なお、洗浄液噴射手段3・4からの洗浄液の噴射速度は
、洗浄液供給口2から供給される洗浄液の流速の2倍以
上とすることが好ましい。Note that the jetting speed of the cleaning liquid from the cleaning liquid jetting means 3 and 4 is preferably at least twice the flow rate of the cleaning liquid supplied from the cleaning liquid supply port 2.
なお、ノズル等からなる洗浄液噴射手段3・4は、基板
支持治具6に支持された複数枚の半導体基板の隣接する
2枚の間に挟まれたすべての領域に洗浄液を噴射しうる
ように、第1図において紙面に垂直の方向に複数設ける
か、または、第6図に示すように、洗浄液噴射手段の噴
射口を長方形に形成し、その長辺が第1図において紙面
に垂直になるように配設して、すべてのよどみ部7・8
に向けて洗浄液を噴射するようにすることが好ましい。Note that the cleaning liquid spraying means 3 and 4 consisting of nozzles and the like are configured to spray the cleaning liquid onto all areas sandwiched between two adjacent semiconductor substrates of a plurality of semiconductor substrates supported by the substrate support jig 6. , a plurality of them are provided in the direction perpendicular to the plane of the paper in FIG. 1, or, as shown in FIG. All stagnation parts 7 and 8
It is preferable to spray the cleaning liquid toward.
里I■
第2図参照
第1例においては、よどみ部7・8に対して、同一方向
から洗浄液を噴射するように構成されているが、これを
、第2図に示すように、洗浄液噴射手段3と4とを洗浄
槽1の対向する二つの側壁に分離して設けて、よどみ部
7と8とにそれぞれ噴射するようにする。I ■ See Figure 2 In the first example, the cleaning liquid is sprayed from the same direction to the stagnation areas 7 and 8; The means 3 and 4 are separately provided on two opposing side walls of the cleaning tank 1 so as to spray into the stagnation parts 7 and 8, respectively.
第」」外
超音波照射手段9と10とを、第2例と同様に、洗浄槽
1の対向する二つの側壁に分離して設け、よどみ部7と
8とに向けてそれぞれ超音波を照射する。Similar to the second example, external ultrasonic irradiation means 9 and 10 are provided separately on two opposing side walls of the cleaning tank 1, and irradiate ultrasonic waves toward the stagnation areas 7 and 8, respectively. do.
部」d舛
第4図参照
第1例における洗浄液噴射手段3・4に代えて、超音波
照射手段と洗浄液噴射手段とを組み合わせた超音波・洗
浄液噴射手段11・12を設け、超音波の印加された洗
浄液をよどみ部7・8に噴射するようにする。Refer to Fig. 4.In place of the cleaning liquid injection means 3 and 4 in the first example, ultrasonic and cleaning liquid injection means 11 and 12, which are a combination of an ultrasonic irradiation means and a cleaning liquid injection means, are provided to apply ultrasonic waves. The washed cleaning liquid is sprayed into the stagnation parts 7 and 8.
Ill性
第3図参照
第1例における洗浄液噴射手段3・4に代えて、超音波
照射手段9・10を設け、よどみ部7・8に向けてそれ
ぞれ超音波を照射するようにする。In place of the cleaning liquid spraying means 3 and 4 in the first example (see FIG. 3), ultrasonic irradiation means 9 and 10 are provided to irradiate ultrasonic waves toward the stagnation parts 7 and 8, respectively.
」」1外
超音波・洗浄液噴射手段11と12とを、第2例と同様
に、洗浄槽1の対向する二つの側壁に分離して設け、よ
どみ部7と8とに向けてそれぞれ超音波の印加された洗
浄液を噴射するようにする。``1'' Ultrasonic wave/cleaning liquid injection means 11 and 12 are provided separately on two opposing side walls of the cleaning tank 1, as in the second example, and ultrasonic waves are directed toward the stagnation areas 7 and 8, respectively. The cleaning liquid applied with this amount is sprayed.
なお、洗浄液噴射手段3・4、または、超音波洗浄液噴
射手段11・12は、洗浄槽1の側面を貫通することな
(、洗浄槽1の上部開口部から洗浄槽1内に吊着するよ
うにしてもよい。Note that the cleaning liquid spraying means 3 and 4 or the ultrasonic cleaning liquid spraying means 11 and 12 do not penetrate the side surface of the cleaning tank 1 (they are suspended in the cleaning tank 1 from the upper opening of the cleaning tank 1). You can also do this.
以上説明せるとおり、本発明に係る半導体基板洗浄方法
及び洗浄装置においては、洗浄槽内に発生する洗浄液の
よどみ部に洗浄液を噴射するか、超音波を照射するか、
または、超音波の印加された洗浄液を噴射することによ
ってよどみ部を拡散し、半導体基板に常に新しい洗浄液
が接触するようにするので、汚染物が良好に除去され、
洗浄効果が向上する。また、複数枚の半導体基板を同時
に洗浄することができるので、スループットが向上する
。As explained above, in the semiconductor substrate cleaning method and cleaning apparatus according to the present invention, it is possible to determine whether the cleaning liquid is injected into the stagnation part of the cleaning liquid generated in the cleaning tank or the ultrasonic wave is irradiated.
Alternatively, by spraying a cleaning solution to which ultrasonic waves have been applied, the stagnation area is diffused so that new cleaning solution always comes into contact with the semiconductor substrate, so that contaminants are effectively removed.
The cleaning effect is improved. Furthermore, since a plurality of semiconductor substrates can be cleaned at the same time, throughput is improved.
第1TI!Jは、本発明の第1の実施例に係る半導体基
板洗浄装置の構成図である。
第2図は、本発明の第2の実施例に係る半導体基板洗浄
装置の構成図である。
第3図は、本発明の第3の実施例に係る半導体基板洗浄
装置の構成図である。
第4図は、本発明の第5の実施例に係る半導体基板洗浄
装置の構成図である。
第5図は、従来技術に係る半導体基板洗浄装置の構成図
である。
第6図は、洗浄液噴射手段の1例である。
l・・・オーバーフロー式洗浄槽、
2・・・洗浄液供給口、
3.4・・・洗浄液噴射手段、
5・・・半導体基板、
6・・・基板支持治具、
7.8・・・よどみ部、
9.10・・・超音波照射手段、
11.12・・・超音波・洗浄液噴射手段。1st TI! J is a configuration diagram of a semiconductor substrate cleaning apparatus according to a first embodiment of the present invention. FIG. 2 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a second embodiment of the present invention. FIG. 3 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a third embodiment of the present invention. FIG. 4 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a fifth embodiment of the present invention. FIG. 5 is a configuration diagram of a semiconductor substrate cleaning apparatus according to the prior art. FIG. 6 shows an example of the cleaning liquid injection means. l...Overflow type cleaning tank, 2...Cleaning liquid supply port, 3.4...Cleaning liquid injection means, 5...Semiconductor substrate, 6...Substrate support jig, 7.8...Stagnation Section 9.10...Ultrasonic irradiation means, 11.12...Ultrasonic/cleaning liquid injection means.
Claims (1)
浄槽(1)内に装入し、該洗浄槽(1)の底面に設けら
れた洗浄液供給口(2)より洗浄液を供給して前記半導
体基板(5)を洗浄する半導体基板洗浄方法において、 前記洗浄槽(1)内に発生する洗浄液のよどみ部(7・
8)に洗浄液を噴射する ことを特徴とする半導体基板洗浄方法。 [2]複数枚の半導体基板(5)をオーバーフロー式洗
浄槽(1)内に装入し、該洗浄槽(1)の底面に設けら
れた洗浄液供給口(2)より洗浄液を供給して前記半導
体基板(5)を洗浄する半導体基板洗浄方法において、 前記洗浄槽(1)内に発生する洗浄液のよどみ部(7・
8)に超音波を照射する ことを特徴とする半導体基板洗浄方法。 [3]複数枚の半導体基板(5)をオーバーフロー式洗
浄槽(1)内に装入し、該洗浄槽(1)の底面に設けら
れた洗浄液供給口(2)より洗浄液を供給して前記半導
体基板(5)を洗浄する半導体基板洗浄方法において、 前記洗浄槽(1)内に発生する洗浄液のよどみ部(7・
8)に超音波の印加された洗浄液を噴射する ことを特徴とする半導体基板洗浄方法。 [4]底面に洗浄液供給口(2)を有するオーバーフロ
ー式洗浄槽(1)と、 該洗浄槽(1)内に供給される洗浄液のよどみ部(7・
8)に洗浄液を噴射する洗浄液噴射手段(3・4)と を有することを特徴とする半導体基板洗浄装置。 [5]底面に洗浄液供給口(2)を有するオーバーフロ
ー式洗浄槽(1)と、 該洗浄槽(1)内に供給される洗浄液のよどみ部(7・
8)に超音波を照射する超音波照射手段(9・10)と を有することを特徴とする半導体基板洗浄装置。 [6]底面に洗浄液供給口(2)を有するオーバーフロ
ー式洗浄槽(1)と、 該洗浄槽(1)内に供給される洗浄液のよどみ部(7・
8)に超音波の印加された洗浄液を噴射する超音波・洗
浄液噴射手段(11・12)とを有することを特徴とす
る半導体基板洗浄装置。[Claims] [1] A plurality of semiconductor substrates (5) are loaded into an overflow type cleaning tank (1), and a cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) is used. In the semiconductor substrate cleaning method of cleaning the semiconductor substrate (5) by supplying a cleaning liquid, a stagnation part (7) of the cleaning liquid generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by spraying a cleaning liquid. [2] A plurality of semiconductor substrates (5) are placed in an overflow type cleaning tank (1), and a cleaning liquid is supplied from the cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) to In a semiconductor substrate cleaning method for cleaning a semiconductor substrate (5), a cleaning liquid stagnation portion (7) generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by irradiating ultrasonic waves. [3] A plurality of semiconductor substrates (5) are placed in an overflow type cleaning tank (1), and a cleaning liquid is supplied from the cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) to In a semiconductor substrate cleaning method for cleaning a semiconductor substrate (5), a cleaning liquid stagnation portion (7) generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by spraying a cleaning liquid to which ultrasonic waves have been applied. [4] An overflow type cleaning tank (1) with a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) A semiconductor substrate cleaning apparatus comprising cleaning liquid spraying means (3 and 4) for spraying a cleaning liquid onto the semiconductor substrate. [5] An overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) Ultrasonic irradiation means (9, 10) for irradiating ultrasonic waves to the semiconductor substrate cleaning apparatus. [6] An overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) A semiconductor substrate cleaning apparatus comprising ultrasonic/cleaning liquid spraying means (11, 12) for spraying a cleaning liquid to which ultrasonic waves have been applied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18806590A JPH0475341A (en) | 1990-07-18 | 1990-07-18 | Method and apparatus for cleaning semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18806590A JPH0475341A (en) | 1990-07-18 | 1990-07-18 | Method and apparatus for cleaning semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0475341A true JPH0475341A (en) | 1992-03-10 |
Family
ID=16217092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18806590A Pending JPH0475341A (en) | 1990-07-18 | 1990-07-18 | Method and apparatus for cleaning semiconductor substrate |
Country Status (1)
Country | Link |
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JP (1) | JPH0475341A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5474616A (en) * | 1992-04-07 | 1995-12-12 | Fujitsu Limited | Method for rinsing plate-shaped articles |
US5624033A (en) * | 1994-07-11 | 1997-04-29 | Fuji Photo Film Co., Ltd. | Package for film product |
US5799678A (en) * | 1995-12-19 | 1998-09-01 | Lg Semicon Co., Ltd. | Apparatus for cleansing semiconductor wafer |
WO2008075643A1 (en) * | 2006-12-21 | 2008-06-26 | Tokyo Electron Limited | Substrate treating apparatus and method of treating substrate |
JP2008159712A (en) * | 2006-12-21 | 2008-07-10 | Tokyo Electron Ltd | Substrate-treating device, substrate treatment method, program, and recording medium |
KR100856176B1 (en) * | 2006-07-25 | 2008-09-03 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate processing apparatus and substrate processing method |
-
1990
- 1990-07-18 JP JP18806590A patent/JPH0475341A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5474616A (en) * | 1992-04-07 | 1995-12-12 | Fujitsu Limited | Method for rinsing plate-shaped articles |
US5927302A (en) * | 1992-04-07 | 1999-07-27 | Fujitsu Limited | Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same |
US5624033A (en) * | 1994-07-11 | 1997-04-29 | Fuji Photo Film Co., Ltd. | Package for film product |
US5709302A (en) * | 1994-07-11 | 1998-01-20 | Fuji Photo Film Co., Ltd. | Package for film product |
US5799678A (en) * | 1995-12-19 | 1998-09-01 | Lg Semicon Co., Ltd. | Apparatus for cleansing semiconductor wafer |
KR100856176B1 (en) * | 2006-07-25 | 2008-09-03 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate processing apparatus and substrate processing method |
WO2008075643A1 (en) * | 2006-12-21 | 2008-06-26 | Tokyo Electron Limited | Substrate treating apparatus and method of treating substrate |
JP2008159712A (en) * | 2006-12-21 | 2008-07-10 | Tokyo Electron Ltd | Substrate-treating device, substrate treatment method, program, and recording medium |
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