JPH0469422B2 - - Google Patents

Info

Publication number: JPH0469422B2
Authority: JP; Japan
Prior art keywords: heat treatment; defect; wafer; density; defects
Prior art date: 1983-09-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP58176781A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6066827A (ja

Inventor

Yasushi Shimanuki

Hisaaki Suga

Mitsuhiro Kainuma

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Materials Corp

Original Assignee

Mitsubishi Materials Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-09-24

Filing date

1983-09-24

Publication date

1992-11-06

1983-09-24 Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp

1983-09-24 Priority to JP17678183A priority Critical patent/JPS6066827A/ja

1985-04-17 Publication of JPS6066827A publication Critical patent/JPS6066827A/ja

1992-11-06 Publication of JPH0469422B2 publication Critical patent/JPH0469422B2/ja

Status Granted legal-status Critical Current

Links

230000007547 defect Effects 0.000 claims description 80
238000010438 heat treatment Methods 0.000 claims description 62
235000012431 wafers Nutrition 0.000 claims description 58
239000013078 crystal Substances 0.000 claims description 23
238000000034 method Methods 0.000 claims description 13
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
229910052710 silicon Inorganic materials 0.000 claims description 11
239000010703 silicon Substances 0.000 claims description 11
239000006104 solid solution Substances 0.000 claims description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
229910052760 oxygen Inorganic materials 0.000 claims description 4
239000001301 oxygen Substances 0.000 claims description 4
239000012298 atmosphere Substances 0.000 claims description 2
239000011261 inert gas Substances 0.000 claims 1
238000001816 cooling Methods 0.000 description 15
230000002950 deficient Effects 0.000 description 6
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
229910052799 carbon Inorganic materials 0.000 description 4
238000012790 confirmation Methods 0.000 description 4
238000005530 etching Methods 0.000 description 4
239000002244 precipitate Substances 0.000 description 4
238000012545 processing Methods 0.000 description 3
238000007796 conventional method Methods 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
229920006395 saturated elastomer Polymers 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
238000012360 testing method Methods 0.000 description 2
230000005540 biological transmission Effects 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
238000012937 correction Methods 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000008034 disappearance Effects 0.000 description 1
238000013213 extrapolation Methods 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
239000000047 product Substances 0.000 description 1
238000010791 quenching Methods 0.000 description 1
230000000171 quenching effect Effects 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
238000004627 transmission electron microscopy Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP17678183A 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法 Granted JPS6066827A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP17678183A JPS6066827A (ja)	1983-09-24	1983-09-24	シリコンウエハ−中への結晶欠陥導入制御法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP17678183A JPS6066827A (ja)	1983-09-24	1983-09-24	シリコンウエハ−中への結晶欠陥導入制御法

Publications (2)

Publication Number	Publication Date
JPS6066827A JPS6066827A (ja)	1985-04-17
JPH0469422B2 true JPH0469422B2 (ko)	1992-11-06

Family

ID=16019724

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP17678183A Granted JPS6066827A (ja)	1983-09-24	1983-09-24	シリコンウエハ−中への結晶欠陥導入制御法

Country Status (1)

Country	Link
JP (1)	JPS6066827A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62293621A (ja) *	1986-06-12	1987-12-21	Nec Corp	半導体集積回路素子
JPH0750713B2 (ja) *	1990-09-21	1995-05-31	コマツ電子金属株式会社	半導体ウェーハの熱処理方法
JP2006032799A (ja) *	2004-07-20	2006-02-02	Shin Etsu Handotai Co Ltd	シリコンエピタキシャルウェーハおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5538098A (en) *	1978-09-08	1980-03-17	Ibm	Method of increasing gettering effect existing in semiconductor substrate bulk

1983
- 1983-09-24 JP JP17678183A patent/JPS6066827A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5538098A (en) *	1978-09-08	1980-03-17	Ibm	Method of increasing gettering effect existing in semiconductor substrate bulk

Also Published As

Publication number	Publication date
JPS6066827A (ja)	1985-04-17

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