JPH0465813A - Capacitor and its manufacture - Google Patents
Capacitor and its manufactureInfo
- Publication number
- JPH0465813A JPH0465813A JP2180055A JP18005590A JPH0465813A JP H0465813 A JPH0465813 A JP H0465813A JP 2180055 A JP2180055 A JP 2180055A JP 18005590 A JP18005590 A JP 18005590A JP H0465813 A JPH0465813 A JP H0465813A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- material layer
- photosensitive material
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000003989 dielectric material Substances 0.000 claims abstract description 18
- 238000007772 electroless plating Methods 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 22
- 229920001940 conductive polymer Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 17
- 239000000243 solution Substances 0.000 abstract description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 239000010949 copper Substances 0.000 abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000011787 zinc oxide Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000007864 aqueous solution Substances 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 abstract 1
- 230000001376 precipitating effect Effects 0.000 abstract 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 17
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 229920000128 polypyrrole Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000012476 oxidizable substance Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はコンデンサとその製造方法に関し 特に光感応
性材料の光電気化学反応を利用したコンデンサに関すも
従来の技術
］ンデンサは一対の電極間に誘電体を介在させ構成され
も 誘電体としては酸化アルミ、酸化チタン、酸化タン
タルあるいはプラスチックフィルムなどが用いられも
例えばアルミコンデンサはアルミニウム表面に電解酸化
により誘電体となる酸化アルミを形成した後、二酸化マ
ンガンを熱分解法により形成し その後導電性カーボン
を電極として付着させコンデンサとしている。ここで、
誘電体上に導電性電極を設ける方法として１よ このよ
うな塗布法あるいは導電性物質を蒸着により付着させる
方法あるいは無電解メッキ法が提案されていも
発明が解決しようとする課題
無電解メッキ法は強い酸化力をもつ二酸化マンガン表面
には析出し難く、直接誘電体たとえば酸化アルミに析出
させたとしてもアルミ表面に均一な誘電体が形成困難で
あるたへ 作成したコンデンサの詩法 特にリーク特性
に大きなバラツキを生し 実用的でな〜も
したがって、−船釣には導電性カーボンの塗布あるいは
蒸着により電極が形成されている。[Detailed Description of the Invention] Industrial Field of Application The present invention relates to a capacitor and its manufacturing method. In particular, it relates to a capacitor that utilizes a photoelectrochemical reaction of a photosensitive material. Aluminum oxide, titanium oxide, tantalum oxide, or plastic film may be used as the dielectric material.
For example, an aluminum capacitor is made by forming aluminum oxide as a dielectric on the aluminum surface by electrolytic oxidation, then forming manganese dioxide by thermal decomposition, and then attaching conductive carbon as an electrode to form a capacitor. here,
As a method of providing a conductive electrode on a dielectric material, 1. Although such a coating method, a method of attaching a conductive substance by vapor deposition, or an electroless plating method has been proposed, the problem to be solved by the invention is the electroless plating method. It is difficult to deposit on the surface of manganese dioxide, which has strong oxidizing power, and even if it is deposited directly on a dielectric material such as aluminum oxide, it is difficult to form a uniform dielectric material on the aluminum surface. This results in large variations and is impractical. Therefore, in boat fishing, electrodes are formed by coating or vapor deposition of conductive carbon.
しかし電極として導電性カーボンを用いた場合、コンデ
ンサ特性においてインダクタンスが高周波において大き
くなり、理想的な挙動からずれる。However, when conductive carbon is used as an electrode, the inductance of the capacitor becomes large at high frequencies, which deviates from ideal behavior.
このズレをなくするために 最近では誘電体と導電性カ
ーボンの間に導電性ポリマーであるポリピロール層を設
けることにより、高周波域まで追従するコンデンサが開
発され商品化が行われるようになってきている。To eliminate this discrepancy, capacitors that can track up to high frequencies have recently been developed and commercialized by providing a polypyrrole layer, which is a conductive polymer, between the dielectric and conductive carbon. .
これらコンデンサの形成に際してζ友 二酸化マンガン
を介在させてたものと、させないものがあり、ともに高
周波域での特性は優れている。ここで、二酸化マンガン
の存在（よ 誘電体である酸化アルミの層の絶縁が不完
全な場合の修復作用と、ピロールを電解重合させるに際
し 二酸化マンガンのもつ強い酸化力により予めピロー
ルを化学的に酸化させる作用とをもった八 より強固に
密着した導電性膜が形成でき、量産製造課程において良
品効率の高いものとなり、非常に大きな意義を持つもの
と考えられる。When forming these capacitors, some have ζ-manganese dioxide present, while others do not, and both have excellent characteristics in the high frequency range. Here, the presence of manganese dioxide has a repair effect when the insulation of the dielectric aluminum oxide layer is incomplete, and when pyrrole is electrolytically polymerized, manganese dioxide has a strong oxidizing power to chemically oxidize pyrrole. This is considered to be of great significance, as it enables the formation of a conductive film that is more firmly adhered, resulting in a high efficiency of quality products in the mass production process.
このように導電性ポリマー（ピロール）を電極としたコ
ンデンサ（よ セラミックコンデンサのように高周波域
まで追従する性能を持板 かっ量産性に富んでいるもの
へ 電極がポリマーであるため耐熱性が約１２０度程度
であり、高信頼性とするにはさらに耐熱性を向上させる
ことが望まれていた
またコンデンサはその性能だけでなく、今日のエレクト
ロニクス機器の発達ととも圏 種々な形状あるいは微細
な形状が望まれている。In this way, capacitors with conductive polymer (pyrrole) as electrodes (like ceramic capacitors) have the ability to track up to high frequencies. In order to achieve high reliability, it was desired to further improve heat resistance.In addition, capacitors have not only improved their performance, but also with the development of today's electronic equipment. desired.
とくに微細な形状のコンデンサを造るに（よ その製造
工程の中にホトレジストを使いパターン化するホトリソ
工程が必要となる。即杖 微細な形状のコンデンサを形
成するにζ友 絶縁物が存在する導電性基板上にホトレ
ジストを塗布し その後所望の形状となるようパターン
露光 現像 エツチングし それぞれの形状にした後、
その形状に応じた電極を付着させコンデンサとしていた
そこで本発明のｍｌの目的は 有機ホトレジストを用い
ず容易゛に種々なタイプあるいは寸法形状のコンデンサ
を形成可能ならしめることであもまた本発明の第２の目
的は セラミックコンデンサに匹敵する周波数特性を有
するコンデンサを提供することにある。In particular, when making capacitors with minute shapes, a photolithography process is required to pattern them using photoresist during the manufacturing process. After applying photoresist onto the substrate, pattern exposure, development, and etching are performed to obtain the desired shape.
The purpose of the ML of the present invention is to make it possible to easily form capacitors of various types or sizes and shapes without using organic photoresists. The second purpose is to provide a capacitor with frequency characteristics comparable to ceramic capacitors.
課題を解決するための手段
電極上に設けた誘電性材料層と、誘電性材料層上に設け
た光感応性材料層と、光感応性材料層上に別の電極を設
けたコンデンサで、係る従来の課題を解決するものであ
る。Means for Solving the Problem A capacitor is provided with a dielectric material layer provided on an electrode, a photosensitive material layer provided on the dielectric material layer, and another electrode provided on the photosensitive material layer. This is a solution to a conventional problem.
作用
光感応性材料としてはｐ型およびｎ型半導体があり、該
半導体にバンドギャプ以上の光を照射すると、照射され
た光エネルギーは半導体内部でホールとエレクトロンに
分かれ 電荷分離する。There are p-type and n-type semiconductors as active photosensitive materials, and when the semiconductor is irradiated with light exceeding the band gap, the irradiated light energy is separated into holes and electrons inside the semiconductor, resulting in charge separation.
電解液中でこの反応を起こさせると、半導体界面で生成
したホールまたはエレクトロンにより、光電気化学酸化
反応あるいは還元反応を起こさせることが出来も
この反応を利用すことにより、各種形状の電極形成する
ことが可能となり、その結果各種タイプ形状のコンデン
サを、ホトリソ工程を用いずに提供することが可能とな
ａ
また本発明のコンデンサＧ１ 誘電性材料層上に設け
た光感応性材料層の光電気化学反応を応用して形成され
も このため光感応性材料層上に設けた電極が、誘電性
材料層の凹凸に正確に沿いかつ密着するた数 この電極
と誘電性材料層との間の抵抗値が低く保持され セラミ
ックコンデンサと同等の周波数特性が得られも
実施例
先ず本発明のコンデンサの製造方法を、ｎ型半導体を用
いたアルミコンデンサの場合について、その作用を含め
て更に詳細に述べる。When this reaction occurs in an electrolyte, the holes or electrons generated at the semiconductor interface can cause a photoelectrochemical oxidation or reduction reaction.By utilizing this reaction, electrodes of various shapes can be formed. As a result, it is possible to provide capacitors of various types and shapes without using a photolithography process. Although it is formed by applying a chemical reaction, the electrode provided on the photosensitive material layer accurately follows the unevenness of the dielectric material layer and adheres closely.The resistance between this electrode and the dielectric material layer EXAMPLE First, the method for manufacturing a capacitor of the present invention will be described in more detail, including its operation, in the case of an aluminum capacitor using an n-type semiconductor.
先ず、アルミ基板上に電解酸化により形成させた誘電体
である酸化アルミ面へ 光半導体層として例えば酸化亜
鉛等のｎ型半導体層を形成した後、この基板を例えば塩
化バラジュウム水溶液等の無電解メッキ用触媒溶液中で
、必要なパターンとなるよう光を照射すると、露光され
た半導体部位においてホールとエレクトロンが発生し
電荷分離が発生する。First, an n-type semiconductor layer such as zinc oxide is formed as an optical semiconductor layer on an aluminum oxide surface which is a dielectric material formed by electrolytic oxidation on an aluminum substrate, and then this substrate is plated with electroless plating such as an aqueous solution of baladium chloride. When light is irradiated in the desired pattern in a catalyst solution, holes and electrons are generated in the exposed semiconductor area.
Charge separation occurs.
ここで発生したホールにより、はとんどの半導体自身の
酸化がおこり、光電気化学反応により溶液中で溶は出す
、と同時に露光部のみに触媒が付着した状態となる。The holes generated here cause oxidation of most of the semiconductor itself, which is dissolved in the solution by a photoelectrochemical reaction, and at the same time, the catalyst becomes attached only to the exposed areas.
しかる後、無電解メッキ溶液中で銅あるいはニッケル等
の導電性金属を析出させ、所望の形状電極を形成するこ
とが出来 容易にコンデンサを形成出来も
但し通究 無電解メッキ用触媒（Ｐｄ）の付着には ア
クティベーション処理のため予め表面に塩化スズなどの
触媒を付着させることにより、スズのついた部分にＰｄ
を析出させることが出来るものであり、これが存在しな
いと良好に析出しな１ｉ〜
無電解メッキ用触媒としては光電気化学的に析出可能な
金属であればよく、 Ｐｄの他例えばＰ ｔ。After that, a conductive metal such as copper or nickel can be deposited in an electroless plating solution to form an electrode in the desired shape. For the attachment, a catalyst such as tin chloride is attached to the surface in advance for activation treatment, and Pd is applied to the tinned area.
The catalyst for electroless plating may be any metal that can be deposited photoelectrochemically, and in addition to Pd, for example, Pt.
Ａｇ、Ａｕなどいずれの金属塩をも用いることが出来る
。Any metal salt such as Ag or Au can be used.
なお上述した例では誘電体として金属酸化物（酸化アル
ミ）に接触して光半導体を形成したが、必要に応じて例
えば二酸化マンガン等の第２の金属酸化物を酸化アルミ
と半導体との間に介在させても支障が無（℃
また光感応性材料で、はとんどのｎ型半導体が溶液中で
光照射により半導体自身が酸化され溶液中に溶は出すが
、例えば酸化チタンのように比較的溶出しない半導体も
存在する。In the above example, an optical semiconductor was formed by contacting a metal oxide (aluminum oxide) as a dielectric, but if necessary, a second metal oxide such as manganese dioxide may be added between the aluminum oxide and the semiconductor. There is no problem even if it is interposed (°C) Also, among photosensitive materials, most n-type semiconductors are oxidized by light irradiation in a solution and dissolve into the solution, but compared to titanium oxide, for example, There are also semiconductors that do not elute.
この場合は半導体表面に生成したホールによって、溶液
中に存在する被酸化性物質を酸化する作用を示す。従っ
て、被酸化性物質として例えばピロー）Ｌ＜ アニリ
ン等のような陽極酸化によって導電性物質を形成しうる
にものを溶液中に存在させて置くことにより、光照射部
に直接導電性物質を析出させることが可能となり、種々
の形状の導電性ポリマーを使用したコンデンサを容易に
形成することが出来も
また上述した光感応性材料としてはｎ型の場合を示した
力交 例えばインジウムリン、チタン酸ストロンチウム
等のｐ型を用いた場合、反応が逆となるだけ基本的には
同様に利用できるものであもなおｎ型半導体の場合でＣ
戴 電解液中で光感応性半導体層が界面で還元される
た数 光照射部位は溶解しなく、光照射部位に選択的に
ニッケルあるいは銅イオンが付着し 別の電極を形成す
もこのように本発明のコンデンサζよ 誘電性材料層上
に設けた光感応性材料の光電気化学反応を利用するたべ
誘電体上の光感応性材料層上に直接金属電極を設けら
れる効果があａ
また直接金属電極が設けられるた敢 誘電性材料層の凹
凸に正確に沿いかつ密着し 周波数特性の優れたコンデ
ンサが提供できる効果がある。In this case, holes generated on the semiconductor surface act to oxidize the oxidizable substance present in the solution. Therefore, by leaving in the solution an oxidizable substance that can form a conductive substance by anodic oxidation, such as pillow) L< aniline, etc., the conductive substance can be deposited directly on the light irradiated area. It is now possible to easily form capacitors using conductive polymers of various shapes. When using a p-type semiconductor such as strontium, the reaction is the opposite, but it can basically be used in the same way, but in the case of an n-type semiconductor, C
The number of times when a photosensitive semiconductor layer is reduced at the interface in an electrolytic solution. The light-irradiated area does not dissolve, and nickel or copper ions selectively adhere to the light-irradiated area, forming another electrode. The capacitor ζ of the present invention utilizes the photoelectrochemical reaction of the photosensitive material provided on the dielectric material layer. This has the effect of providing a capacitor with excellent frequency characteristics because the metal electrodes accurately follow and adhere closely to the irregularities of the dielectric material layer.
電極形成゛に必要な光感応性材料の形成方法として（友
基板との密着性の観点か収 さらに高周波域までイン
ダクタンスが追従するものとして（よ有機金属化合物か
らの熱分解方法による形成が望ましｔ〜
以下実施例をもとに本発明を更に詳細に説明すも
実施例１
第１図は本発明により形成したコンデンサであ第１図中
１は導電性基板であるアルミ金属豚２は誘電体である酸
化アルミ、 ３は光感応性材料であり、ここではｎ型半
導体である酸化亜鉛を用い九 ４は別の導電性電極であ
り銅金属を使用し５は陽極リード、 ６は陰極リード、
７は熱硬化性エポキシ樹脂からなるシール部であム
このコンデンサの形成に際して（よ 先ず、厚さ５０μ
ｍ、 寸法２９６ｍｍＸ ２１０ｍｍのＡ４サイズの
アルミ金属薄基板１を、ホウ酸アンモンを主体とした電
解液中で２ｍＡ／ｃｍ”の電流密度で陽極酸化する事に
より、その表面に誘電体である酸化アルミ２を形成しｔ
ら
次へ 酢酸亜鉛のエタノール溶液（０，０５ｍｏ１／ｄ
ｍ”）を、酸化アルミを形成した基板表面にスプレー法
により塗布した
続いて、このアルミ金属薄基板ｌを、大気下３００℃の
下で加熱し 酢酸亜鉛を分解させｎ型光半導体である酸
化亜鉛層を光感応性材料３としてその表面に形成させた
さらに所望の寸法（ここでは５ｍｍｘ５ｍｍ）のコンデ
ンサとなるよう、コンデンサ間の距離が１ｍｍとなるよ
うに予め作成したガラス基板からなるホトマスク８を用
（（第２図のように無電解メッキ用触媒（Ｐｄ）溶液９
中で、光感応性材料３ （即ち酸化亜鉛）を形成したア
ルミ金属薄基板ｌく 紫外線ランプにより紫外光を照射
したその結果 光照射部のみの酸化亜鉛が溶出してなく
なり、第３図（イ）のように露光部にのみ無電解メッキ
用触媒（Ｐｄ）１０が付着した形態となる。As a method for forming the photosensitive material necessary for electrode formation, it is preferable to form it by a thermal decomposition method from an organometallic compound (from the viewpoint of adhesion to the substrate), and because the inductance follows up to a high frequency range. t~ The present invention will be explained in more detail based on Examples below.Example 1 Fig. 1 shows a capacitor formed according to the present invention. 3 is a photosensitive material, in which zinc oxide, which is an n-type semiconductor, is used; 4 is another conductive electrode, made of copper metal; 5 is an anode lead; and 6 is a cathode lead. ,
7 is a sealing part made of thermosetting epoxy resin.
By anodizing an A4 size aluminum metal thin substrate 1 with dimensions 296 mm x 210 mm at a current density of 2 mA/cm in an electrolyte mainly containing ammonium borate, aluminum oxide, which is a dielectric, is formed on its surface. form 2 and t
Next Ethanol solution of zinc acetate (0.05mol/d
The aluminum metal thin substrate l was then heated in the atmosphere at 300°C to decompose the zinc acetate and form the n-type optical semiconductor oxide. A photomask 8 made of a glass substrate was prepared in advance so that the distance between the capacitors was 1 mm, so that a zinc layer was formed on the surface of the photosensitive material 3, and the distance between the capacitors was 1 mm. ((As shown in Figure 2, electroless plating catalyst (Pd) solution 9
Inside, the thin aluminum metal substrate on which the photosensitive material 3 (i.e. zinc oxide) was formed was irradiated with ultraviolet light using an ultraviolet lamp. As a result, the zinc oxide only in the light irradiated area eluted and disappeared, as shown in Figure 3 (I). ), the electroless plating catalyst (Pd) 10 is attached only to the exposed area.
続いて、無電解銅メッキ溶液中に該基板１を浸漬させ、
第３図（ロ）に示したように別の導電性電極４として銅
をパターン状に析出させ九次にそれぞれの小さな素子に
切断した後、アルミ面からは酸化アルミを除去し 導電
性銀ペーストを用い錫引き導線でもってアルミ銅価電極
よりそれぞれの電極をとりだし 第１図に示したコンデ
ンサを構成し九
第４図には得られた本発明によるコンデンサの周波数特
性（ａ）を示したものであム
比較のため従来のアルミコンデンサ（ｂ）、およびピロ
ールを電極としたアルミコンデンサ（Ｃ）さらにセラミ
ツツクコンデンサ（ｄ）、タンタルコンデンサ（ｅ）の
特性を記載しｔ４第４図から明らかなように 本発明の
コンデンサの高周波域での特性バ セラミックコンデン
サ並であることが分かも
第５図は２００℃での温度特性を示したものであム
明らかに本発明のコンデンサが優れていること示されて
いも
これは本発明のコンデンサが、 耐熱性に優れた無機材
料で構成されていることによるものであると考えられも
実施例２
実施例１において、酸化アルミを形成した導電性基板に
接して、光感応性材料（酸化亜鉛）を形成させた工程中
において、酸化アルミと光感応性材料との間に二酸化マ
ンガン層を熱分解法により形成させたの板 該二酸化マ
ンガン層に接して光感応性材料を形成したこと以外実施
例１と同様にしてコンデンサを形成し九
得られたコンデンサの特性は殆ど実施例１と同様な挙動
を示し九
実施例３
実施例２において、二酸化マンガン層に接して光感応性
材料を形成し 続いて光電気化学反応によりＰｄを光照
射部位に析出させた後、銅を無電解メッキ法により析出
させ、電極としたが、銅の代わりにカーボンをスクリー
ン印刷法により塗布しこと以外実施例２と同様にしてコ
ンデンサを形成した
得られたコンデンサの特性は殆ど実施例２と同様な挙動
を示した
実施例４
光感応性材料としてｎ型半導体である酸化タングステン
を用いた以外実施例１と同様にしてコンデンサを形成し
た
先ず、厚さ５０μへ 寸法１０ｍｍＸ １０ｍｍのサイ
ズのアルミ金属薄基板を、ホウ酸アンモンを主体とした
電解液中で２ｍＡ／ｃｍ２の電流密度で陽極酸化するこ
とにより、その表面番こ誘電体である酸化アルミを形成
し九
次に べロキソポリタングステン酸水溶液を予め作成し
その水溶液を酸化アルミを形成した基板表面にスプレ
ー法により塗布した
続いて、該基板を大気下１８０℃のもとてカロ熱Ｉ−ｎ
型光半導体である酸化タングステン層をその表面に形成
させ九
さらに所望の寸法（ここでは４ｍｍＸ４ｍｍ）のコンデ
ンサとなるように コンデンサ間の距離１ｍｍとなるよ
う予め作成したガラス基板力１らなるホトマスクを用ｂ
Ｘ、実施例１のよう番ご無電解メッキ用触媒（Ｐｄ）溶
液中で、酸化タングステンを形成したアルミ金属基板に
紫外線ランプ番こより紫外光を照射した
その結果 光照射部のみの酸化タングステン力く溶出し
てなくなり、露光部にのみＰｄが付着した形態となった
続いて、無電解銅メッキ溶液中に該基板を浸漬させ、銅
をパターン状に析出させ九
次にそれぞれの素子を切断した後、アルミ面からは酸化
アルミを除去し 導電性銀ペーストを用い錫引き導線で
もってアルミ銅価電極よりそれぞれの電極をとりだしコ
ンデンサとした
これらのコンデンサについて実施例１と同様に各種性能
試験を行った結果 実施例１と同様の結果を示しな
実施例５
光感応性材料としてｎ型半導体である酸化チタンを用ｔ
、Ｘ、導電性電極として金属に変えて導電性高分子を使
用しコンデンサを形成した
先ず、厚さ５０μ四 寸法１０ｍｍＸ １０ｍｍのサイ
ズのアルミ金属薄基板を、ホウ酸アンモンを主体とした
電解液中で２ｍＡ／ｃｍ”の電流密度で陽極酸化するこ
とにより、その表面に誘電体である酸化アルミを形成し
九
次〈 ５０％チタンテトライソプロポキシド／イソプロ
ピルアルコール溶液中に前記基板を浸漬し 蒸留水中に
浸漬させた後、 ４５０℃で焼成しｎ型光半導体である
酸化チタン層をその表面に形成させた
続いて、導電性ポリマーをその表面に光電気化学法によ
り析出させ九
析出させた導電性ポリマーはポリピロールで、その方法
はアルキルナフタレンスルホン酸ソーダを支持電解質と
り、１％ピロールを含む電解液中に酸化チタンを形成さ
せた基板を浸漬させ、該基板に実施例３で使用した逆パ
ターンのホトマスクを用い紫外光線を照射することによ
り、紫外光が照射されている酸化チタン表面でのみピロ
ールが酸化され パータン状にポリピロールが光電気化
学重合によって析出し九
この阪 必要に応じて外部より電圧を印加し電解重合を
併用することにより、 ピロールの析出を加速させるこ
とが出来も
しかる後、電解液から基板を取り出し 洗浄乾燥した抵
導電性カーボンを用い電極を形成しそれぞれのコンデ
ンサを切断し各コンデンサ素子とした
得られたコンデンサの周波数特性を調べた結果従来のピ
ロールを用いたコンデンサと同様の特性を示した
以上説明したように本発明のコンデンサ（よ 照射する
光パターンを変更することにより、各種サイズのコンデ
ンサを容易に作成することが可能であることが判明し九
実施例６
実施例１〜５ではアルミコンデンサの例を示した力交
ここではタンタルコンデンサの作成について示す。Subsequently, the substrate 1 is immersed in an electroless copper plating solution,
As shown in Fig. 3 (b), copper is deposited in a pattern as another conductive electrode 4 and cut into small elements nine times. After that, aluminum oxide is removed from the aluminum surface and conductive silver paste is applied. The capacitor shown in Fig. 1 was constructed by taking out each electrode from the aluminum copper valence electrode using a tin-drawn conducting wire, and Fig. 4 shows the frequency characteristic (a) of the obtained capacitor according to the present invention. For comparison, the characteristics of a conventional aluminum capacitor (b), an aluminum capacitor with pyrrole as an electrode (C), a ceramic capacitor (d), and a tantalum capacitor (e) are listed and are clear from Figure 4. It can be seen that the characteristics of the capacitor of the present invention in the high frequency range are comparable to those of ceramic capacitors. Figure 5 shows the temperature characteristics at 200°C, and it is clear that the capacitor of the present invention is superior. This may be due to the fact that the capacitor of the present invention is made of an inorganic material with excellent heat resistance. A plate in which a manganese dioxide layer was formed by a pyrolysis method between the aluminum oxide and the photosensitive material during the process of forming a photosensitive material (zinc oxide) in contact with the manganese dioxide layer. A capacitor was formed in the same manner as in Example 1 except that the photosensitive material was formed.The characteristics of the obtained capacitor exhibited almost the same behavior as in Example 1.Example 3 In Example 2, the manganese dioxide layer was Next, Pd was deposited on the light irradiated area by a photoelectrochemical reaction, and then copper was deposited by electroless plating to form an electrode, but carbon was used as a screen instead of copper. A capacitor was formed in the same manner as in Example 2 except that it was coated by a printing method.The characteristics of the obtained capacitor exhibited almost the same behavior as in Example 2.Example 4 Oxide, which is an n-type semiconductor, was used as a photosensitive material. A capacitor was formed in the same manner as in Example 1 except that tungsten was used. First, a thin aluminum metal substrate with dimensions of 10 mm x 10 mm to a thickness of 50 μm was heated at a current of 2 mA/cm2 in an electrolyte mainly containing ammonium borate. Aluminum oxide, which is a dielectric material, was formed on the surface by density anodization, and an aqueous solution of beroxopolytungstic acid was prepared in advance, and the aqueous solution was applied by spraying to the surface of the substrate on which aluminum oxide had been formed. Subsequently, the substrate was heated in the atmosphere at 180°C and heated to heat I-n.
A tungsten oxide layer, which is a photo-semiconductor, is formed on the surface of the tungsten oxide layer.Furthermore, a photomask made of a glass substrate 1 prepared in advance so that the distance between the capacitors is 1 mm is used to form a capacitor of the desired size (here, 4 mm x 4 mm). b
X, As in Example 1, an aluminum metal substrate on which tungsten oxide was formed in a catalyst (Pd) solution for electroless plating was irradiated with ultraviolet light from an ultraviolet lamp. The substrate was eluted and disappeared, leaving Pd attached only to the exposed areas.Next, the substrate was immersed in an electroless copper plating solution, copper was deposited in a pattern, and each element was cut nine times. , aluminum oxide was removed from the aluminum surface, each electrode was taken out from the aluminum copper valence electrode using a conductive silver paste and a tin-plated conductor wire, and various performance tests were conducted on these capacitors in the same manner as in Example 1. Results Showing the same results as Example 1 Example 5 Using titanium oxide, which is an n-type semiconductor, as the photosensitive material
, The substrate was anodized at a current density of 2 mA/cm'' to form aluminum oxide as a dielectric on its surface, and the substrate was immersed in a 50% titanium tetraisopropoxide/isopropyl alcohol solution in distilled water. After immersing it in water, it was fired at 450°C to form a titanium oxide layer, which is an n-type photosemiconductor, on its surface.Next, a conductive polymer was deposited on the surface by photoelectrochemical method. The polymer is polypyrrole, and the method is to use sodium alkylnaphthalene sulfonate as a supporting electrolyte, immerse a substrate on which titanium oxide has been formed in an electrolytic solution containing 1% pyrrole, and apply the reverse pattern used in Example 3 to the substrate. By irradiating ultraviolet light using a photomask, pyrrole is oxidized only on the titanium oxide surface that is irradiated with ultraviolet light, and polypyrrole is precipitated in a patterned form by photoelectrochemical polymerization. The deposition of pyrrole can be accelerated by applying electric current and electrolytic polymerization. After that, the substrate is removed from the electrolyte, and the washed and dried resistive carbon is used to form electrodes, and each capacitor is cut. As a result of examining the frequency characteristics of the capacitor obtained as an element, it was found that the characteristics were similar to those of the conventional capacitor using pyrrole. It was found that it was possible to easily create a capacitor of the same size as in Example 6.
Here, we will show how to create a tantalum capacitor.
まず、厚さ５０μ瓜 寸法１０ｍｍｘ １０ｍｍのサイ
ズのタンタル金属薄基板を電解液中で電解酸化する事に
より、その表面に誘電体である酸化タンタルを形成した
次に ５０％チタンテトライソプロポ本シト／イソプロ
ピルアルコール溶液中に前記基板を浸漬した後、蒸留水
中に浸漬させた後、４５０ｔで焼成Ｌｎ型光半導体であ
る酸化チタン層をその表面に形成させ九
続いて、実施例４と同様にして導電性ポリマー（ポリピ
ロール）を、酸化チタン層表面に光電気化学法により析
出させた
しかる免 電解液から基板を取り出し 洗浄乾燥した後
、導電性カーボンを用い電極を形成しそれぞれのコンデ
ンサを切断し各コンデンサ素子としに
得られたコンデンサの周波数特性について実施例１と同
様に各種性能試験を行った結果 従来のタンタルコンデ
ンサとは異なり高周波域での特性がセラミックコンデン
サと同様の特性を示した発明の詳細
な説明したよう艮 本発明は電極上に誘電性材料層と光
感応性材料層とを設（す、光感応性材料層上に別の電極
を設けたコンデンサであり、その製造方法として表面に
誘電体を持つ導電性基板に電極を形成する方法として光
電気化学手法を用いることにより、ホトレジストを用い
ずに各種サイズで各種タイプのコンデンサを形成するこ
とが可能であり、セラミックコンデンサに匹敵する周波
数特性を発現する効果がある。First, a tantalum metal thin substrate with a thickness of 50 μm and dimensions of 10 mm x 10 mm was electrolytically oxidized in an electrolytic solution to form tantalum oxide as a dielectric on its surface. After the substrate was immersed in an isopropyl alcohol solution and then in distilled water, a titanium oxide layer, which is an Ln-type optical semiconductor, was formed on the surface by firing at 450 t. A polymer (polypyrrole) is deposited on the surface of the titanium oxide layer using a photoelectrochemical method.The substrate is removed from the electrolytic solution. After washing and drying, electrodes are formed using conductive carbon and each capacitor is cut. The results of various performance tests conducted on the frequency characteristics of the capacitor obtained as an element in the same manner as in Example 1. As explained above, the present invention relates to a capacitor in which a dielectric material layer and a photosensitive material layer are provided on an electrode, and another electrode is provided on the photosensitive material layer. By using a photoelectrochemical method to form electrodes on a conductive substrate with a body, it is possible to form various types of capacitors in various sizes without using photoresist, and the frequency characteristics are comparable to those of ceramic capacitors. It has the effect of expressing.
また従来提案されている例えばポリピロールを用いたコ
ンデンサに比べると、耐熱性が向上できる効果もある。Furthermore, compared to conventionally proposed capacitors using polypyrrole, for example, it has the effect of improving heat resistance.
第１図本発明の一実施例によるコンデンサの概略構成＠
第２図及び第３図は本発明の素子を構成するための断
面概念工程医 第４図はコンデンサの周波数特性図 第
５図はコンデンサの高温時の容量変化と保存時間との関
係の特性図である。
１・・・アルミ金属薄基板、 ２・・・酸化アルミ、
３・・・光感応性材粧 ４・・・別の導電性電機 ９・
・・無電解メッキ用触媒溶液、 １０・・・無電解メッ
キ用触弧代理人の氏名 弁理士 粟野重孝 はか１名？
１ 「・
インピーダンス（ΩンFig. 1 Schematic configuration of a capacitor according to an embodiment of the present invention @
Figures 2 and 3 are cross-sectional conceptual process diagrams for constructing the element of the present invention. Figure 4 is a frequency characteristic diagram of a capacitor. Figure 5 is a characteristic diagram of the relationship between capacitance change at high temperature and storage time of a capacitor. It is. 1... Aluminum metal thin substrate, 2... Aluminum oxide,
3... Photosensitive material 4... Another conductive electrical machine 9.
... Catalyst solution for electroless plating, 10... Name of catalyst agent for electroless plating Patent attorney Shigetaka Awano Haka 1 person?
1. Impedance (Ω)
Claims (7)
層上に設けた光感応性材料層と、前記光感応性材料層上
に前記電極とは別の電極を設けたことを特徴とするコン
デンサ。(1) A dielectric material layer provided on the electrode, a photosensitive material layer provided on the dielectric material layer, and an electrode different from the electrode provided on the photosensitive material layer. Characteristic capacitors.
ることを特徴とする、請求項１記載のコンデンサ。(2) The capacitor according to claim 1, wherein the photosensitive material is a semiconductor made of a metal oxide.
徴とする請求項１記載のコンデンサ。3. The capacitor according to claim 1, wherein one of the electrodes includes a conductive polymer.
前記誘電性材料層上に光感応性材料層を設け、前記光感
応性材料層上に前記電極とは別の電極を対向して形成さ
せる電極形成工程とを有することを特徴とするコンデン
サの製造方法。(4) a dielectric formation step in which a dielectric material layer is provided on the electrode;
Manufacturing a capacitor, comprising: providing a photosensitive material layer on the dielectric material layer; and forming an electrode different from the electrode on the photosensitive material layer to face the electrode. Method.
くは光未照射部位の何れかに選択的に導電性材料を析出
させることを特徴とする、請求項４記載のコンデンサの
製造方法。(5) The method for manufacturing a capacitor according to claim 4, wherein the electrode forming step selectively deposits the conductive material on either a light-irradiated region or a light-unirradiated region of the photosensitive material.
電気化学反応を行い、光感応性材料の光照射部位に無電
解メッキ用触媒を付着させ、付着した前記無電解メッキ
触媒を無電解メッキ溶液中に浸漬して金属を析出させる
工程であることを特徴とする、請求項４もしくは５何れ
かに記載のコンデンサの製造方法。(6) In the electrode formation step, a photoelectrochemical reaction is carried out in a catalyst solution for electroless plating, the catalyst for electroless plating is attached to the light irradiated part of the photosensitive material, and the attached electroless plating catalyst is removed. 6. The method for manufacturing a capacitor according to claim 4, further comprising the step of depositing metal by immersing the capacitor in an electrolytic plating solution.
により形成した半導体であることを特徴とする、請求項
４記載のコンデンサの製造方法。(7) The method for manufacturing a capacitor according to claim 4, wherein the photosensitive material is a semiconductor formed by a thermal decomposition method from an organometallic compound.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180055A JP2834284B2 (en) | 1990-07-06 | 1990-07-06 | Capacitor and its manufacturing method |
| US07/725,345 US5126921A (en) | 1990-07-06 | 1991-07-03 | Electronic component and a method for manufacturing the same |
| DE69127724T DE69127724T2 (en) | 1990-07-06 | 1991-07-05 | A capacitor and its manufacturing process |
| EP91111217A EP0464842B1 (en) | 1990-07-06 | 1991-07-05 | A capacitor and a method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180055A JP2834284B2 (en) | 1990-07-06 | 1990-07-06 | Capacitor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0465813A true JPH0465813A (en) | 1992-03-02 |
| JP2834284B2 JP2834284B2 (en) | 1998-12-09 |
Family
ID=16076699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2180055A Expired - Fee Related JP2834284B2 (en) | 1990-07-06 | 1990-07-06 | Capacitor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2834284B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6899919B2 (en) | 2003-01-21 | 2005-05-31 | Jack Chen | Method of making a high surface area electrode |
| WO2024070465A1 (en) * | 2022-09-30 | 2024-04-04 | パナソニックＩｐマネジメント株式会社 | Capacitor |
| WO2024070508A1 (en) * | 2022-09-30 | 2024-04-04 | パナソニックＩｐマネジメント株式会社 | Capacitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739166A (en) * | 1980-08-20 | 1982-03-04 | Matsushita Electric Ind Co Ltd | Activated paste for electroless plating and formation of electrode using the same |
-
1990
- 1990-07-06 JP JP2180055A patent/JP2834284B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739166A (en) * | 1980-08-20 | 1982-03-04 | Matsushita Electric Ind Co Ltd | Activated paste for electroless plating and formation of electrode using the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6899919B2 (en) | 2003-01-21 | 2005-05-31 | Jack Chen | Method of making a high surface area electrode |
| WO2024070465A1 (en) * | 2022-09-30 | 2024-04-04 | パナソニックＩｐマネジメント株式会社 | Capacitor |
| WO2024070508A1 (en) * | 2022-09-30 | 2024-04-04 | パナソニックＩｐマネジメント株式会社 | Capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2834284B2 (en) | 1998-12-09 |
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