JPH04653U - - Google Patents
Info
- Publication number
- JPH04653U JPH04653U JP4004890U JP4004890U JPH04653U JP H04653 U JPH04653 U JP H04653U JP 4004890 U JP4004890 U JP 4004890U JP 4004890 U JP4004890 U JP 4004890U JP H04653 U JPH04653 U JP H04653U
- Authority
- JP
- Japan
- Prior art keywords
- liner
- gap
- length
- divided
- blocks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はこの考案の一実施例を示す平面断面図
、第２図は従来例を示す平面断面図、第３図は他
の従来例を示す平面断面図である。
３……ニユートラルカツプ、４……デイスク、
５……キヤツチプレート、８……ライナ、８ａ〜
８ｃ……ライナブロツク、Ｇ……ギヤツプ、Ｗ…
…ウエハ、Ｌａ〜Ｌｃ……ライナブロツクの長さ
、Ｌｇ……ギヤツプの長さ。
FIG. 1 is a sectional plan view showing an embodiment of this invention, FIG. 2 is a sectional plan view showing a conventional example, and FIG. 3 is a sectional plan view showing another conventional example. 3...neutral cup, 4...disk,
5...Catch plate, 8...Liner, 8a~
8c...liner block, G...gap, W...
...Wafer, La to Lc...Length of liner block, Lg...Length of gap.
Claims (1)
プとキヤツチプレート間のギヤツプに進退自在に
設け、前記ニユートラルカツプに装着されたライ
ナをビームライン方向に複数個のライナブロツク
に分割し、これらの各ライナブロツクの長さを前
記ギヤツプの長さよりも短く設定したイオン注入
装置。 A disk supporting the wafer is provided in a gap between the neutral cup and the catch plate so as to be able to move forward and backward, and the liner attached to the neutral cup is divided into a plurality of liner blocks in the beam line direction, and each liner block is divided into a plurality of liner blocks. An ion implantation device in which the length of the gap is set shorter than the length of the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4004890U JPH04653U (en) | 1990-04-13 | 1990-04-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4004890U JPH04653U (en) | 1990-04-13 | 1990-04-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04653U true JPH04653U (en) | 1992-01-07 |
Family
ID=31549497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4004890U Pending JPH04653U (en) | 1990-04-13 | 1990-04-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04653U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11152565A (en) * | 1997-09-08 | 1999-06-08 | Eaton Corp | Electron shower of ion implantation apparatus, extension tube and method for regeneration of this tube |
-
1990
- 1990-04-13 JP JP4004890U patent/JPH04653U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11152565A (en) * | 1997-09-08 | 1999-06-08 | Eaton Corp | Electron shower of ion implantation apparatus, extension tube and method for regeneration of this tube |