JPH0463419A - Charged particle beam drawing method - Google Patents
Charged particle beam drawing methodInfo
- Publication number
- JPH0463419A JPH0463419A JP17572290A JP17572290A JPH0463419A JP H0463419 A JPH0463419 A JP H0463419A JP 17572290 A JP17572290 A JP 17572290A JP 17572290 A JP17572290 A JP 17572290A JP H0463419 A JPH0463419 A JP H0463419A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- charged particle
- particle beam
- data
- shot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000003860 storage Methods 0.000 claims description 13
- 238000007493 shaping process Methods 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000011960 computer-aided design Methods 0.000 description 6
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002039 particle-beam lithography Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、描画精度を向上させた荷電粒子ビーム描画方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a charged particle beam lithography method with improved lithography accuracy.
［従来の技術］
近時、ＬＳＩ素子、超ＬＳＩ素子、超ＬＳＩ素子の製作
に電子ビーム描画装置やイオンビーム描画装置等の荷電
粒子ビーム描画製置か注目されている。以後、説明の便
宜上、電子ビーム描画装置を例に上げて説明する。[Prior Art] Recently, charged particle beam lithography methods such as electron beam lithography systems and ion beam lithography systems have been attracting attention for the production of LSI devices, super LSI devices, and super LSI devices. Hereinafter, for convenience of explanation, an electron beam lithography apparatus will be used as an example.
最近、矩形状若しくは正方形状開口を有する二枚のスリ
ットを電子ビーム通路上に並べ、上方スリットの開口を
通過した電子発生装置からの電子ビームと下方スリット
の開口の一部の重なり具合を該各スリット間に配置され
た偏向器を用いて制御する事により任意の形状及び大き
さの矩形状断面若しくは正方形状断面を有する電子ビー
ムを作成し、該電子ビームを材料上にショットする事に
より所望の形状及び大きさのパターンを描画する様にし
た、所謂、可変面積型荷電粒子ビーム描画装置が、描画
速度及び描画精度の面で優れた装置として使用されてい
る。Recently, two slits each having a rectangular or square aperture are arranged on the electron beam path, and the degree of overlap between the electron beam from the electron generator that has passed through the upper slit opening and a portion of the lower slit opening has been measured. By controlling using a deflector placed between the slits, an electron beam having a rectangular or square cross section of arbitrary shape and size is created, and the electron beam is shot onto the material to obtain the desired shape. 2. Description of the Related Art A so-called variable-area charged particle beam lithography apparatus that draws patterns of different shapes and sizes is used as an apparatus that is excellent in terms of drawing speed and drawing accuracy.
さて、この様な装置により描画されるパターンの原形は
、通常、ＣＡＤ（Ｃｏｍｐｕｔｅｒ Ａｉｄｅｄ
Ｄｅｓｉｇｎ）等により作成されている。そして、該Ｃ
ＡＤで作成されたＩＣパターン（以後、原ＩＣパターン
と称す）を、描画用のパターンデータに変換する際に、
次の様に分割している。Now, the original form of the pattern drawn by such a device is usually CAD (Computer Aided
Design) etc. And the C
When converting an IC pattern created with AD (hereinafter referred to as original IC pattern) to pattern data for drawing,
It is divided as follows.
例えば、第２図（ａ）に示す如き原ＩＣパターンの角位
置間を結ぶ様に、該原ＩＣパターンをＸ方向若しくはＹ
方向の何れかの方向に切る。この例の場合、例えば、Ｘ
方向に切って、第２図（ｂ）に示す様に、パターンＡ、
、Ｂ、、Ｃ，を得る。For example, the original IC pattern can be moved in the X direction or in the Y direction so as to connect the corner positions of the original IC pattern as shown in FIG.
Cut in either direction. In this example, for example,
Cut in the direction of pattern A, as shown in Figure 2(b).
,B,,C, are obtained.
そして、各分割パターンＡ、、Ｂ、、Ｃ，のショット位
置指定データ、寸法データ等の描画パターンデータを記
憶手段に記憶させる。そして、パターン描画時、該記憶
手段から各パターンの描画データを順次呼出し、ショッ
ト位置指定データは位置決め用偏向系に、寸法データは
上記整形用偏向系に夫々送り、材料上の所定位置に所定
断面のビームをショットする事により、各分割パターン
を描く様にしている。Then, drawing pattern data such as shot position designation data and dimension data for each divided pattern A, B, C, is stored in the storage means. When drawing a pattern, the drawing data for each pattern is sequentially recalled from the storage means, the shot position designation data is sent to the positioning deflection system, the dimension data is sent to the shaping deflection system, and a predetermined cross section is placed at a predetermined position on the material. By shooting the beam, each division pattern is drawn.
所で、電子ビーム密度と１ショット時間が一定の場合、
描画されたパターン内の電荷量はそのパターンの面積に
比例するので、描画された分割パターンの大きさにより
該各分割パターン内の電荷の相互作用（クーロン効果）
に違いが発生する。By the way, if the electron beam density and one shot time are constant,
Since the amount of charge within a drawn pattern is proportional to the area of that pattern, the interaction of charges within each divided pattern (Coulomb effect) depends on the size of the divided pattern drawn.
A difference occurs.
該電荷の相互作用は分割パターン相互の大きさに然程差
か無ければ然程違いがないが、互いの大きさに著しい違
いのある場合、その差が大きく、その為に、描画精度の
上で、許容出来ない差が発生する。例えば、上記のパタ
ーン分割の様に、大きなパターンＢ１と微小パターンＡ
、、Ｃ，が出来ると、材料上のレジストの感度により、
大きなパターンＢ１が所定の大きさに描画されると、微
小パターンＡＩ、Ｃ，は所定より小さい大きさに描画さ
れてしまい、逆に、微小パターンＡ１．Ｃ１が所定の大
きさに描画されると、大きなパターンＢ１は所定より大
きく描画されてしまう。以後、説明の便宜上、微小パタ
ーンが所定より小さく描画されてしまうレジストが使用
されているとする。There is no difference in the interaction between the charges if the sizes of the divided patterns are very different, but if there is a significant difference in size between them, the difference is large, and therefore, the writing accuracy may be affected. This results in an unacceptable difference. For example, as in the pattern division above, a large pattern B1 and a small pattern A
, ,C, due to the sensitivity of the resist on the material,
When the large pattern B1 is drawn to a predetermined size, the small patterns AI, C, are drawn to a smaller size than the predetermined size, and conversely, the small patterns A1. If C1 is drawn to a predetermined size, the large pattern B1 will be drawn larger than the predetermined size. Hereinafter, for convenience of explanation, it is assumed that a resist is used in which a minute pattern is drawn smaller than a predetermined size.
そこで、前記の様にＣＡＤからの原ＩＣパターンをＸ方
向に切った時に、微小パターンが出来た場合、今度は、
Ｙ方向に切り、第２図（ｃ）に示す如き、互いの大きさ
に然程差のないパターンＡ２、Ｂ２．Ｃ２を得る様にし
ている。Therefore, if a minute pattern is created when the original IC pattern from CAD is cut in the X direction as described above, this time,
When cut in the Y direction, patterns A2, B2, . I'm trying to get C2.
［発明が解決しようしする課題］
しかし、ＣＡＤからの原ＩＣパターンが、例えば、第３
図（ａ）に示す如きパターンの場合、Ｘ方向に切ると、
大パターンＡ、、’Ｂ、、Ｃ，と微小パターンＤ３□、
Ｄ、２が出来るので、次に、Ｙ方向に切ると、微小パタ
ーンＡ ４１． Ａ ４２と大パターンＢ４．Ｃ４，Ｉ
）４．Ｂ４が出来てしまい、何れにしても、微小パター
ンが出来てしまい、描画精度の低下が発生する。[Problems to be solved by the invention] However, if the original IC pattern from CAD is
In the case of the pattern shown in figure (a), when cut in the X direction,
Large patterns A,,'B,,C, and small patterns D3□,
D, 2 is created, so next, cut in the Y direction to create a minute pattern A 41. A 42 and large pattern B4. C4,I
)4. B4 is produced, and in any case, a minute pattern is produced, resulting in a decrease in drawing accuracy.
本発明はこの様な問題を解決する事を目的としたもので
ある。The present invention is aimed at solving such problems.
［課題を解決するための手段］
そこで、本発明は、原ＩＣパターンの各角位置間を結ぶ
様に該原ＩＣパターンをＸ方向若しくはＹ方向に分割し
、該各分割パターンデータを第１記憶部に記憶させ、且
つ、前記原ＩＣパターンの各角位置間を結ぶ様に該原Ｉ
ＣパターンをＹ方向若しくはＸ方向に分割し、該各分割
パターンデータを第２記憶部に記憶させ、パターン描画
時、前記第１記憶部から各分割パターンの描画データを
呼出し、該呼出しだ描画データの内、分割パターンのシ
ョット位置指定データに基づいて荷電粒子ビームの材料
上でのショット位置をコントロールし、分割パターンの
寸法データに基づいて該荷電粒子ビームの断面を整形し
て、材料上の荷電粒子ビーム照射量を標準の１／２にし
て材料上の所定の位置に整形した荷電粒子ビームをショ
ットし、次に、前記第２記憶部から各分割パターンの描
画データを呼出し、該呼出した描画データの内、パター
ンのショット位置指定データに基づいて荷電粒子ビーム
の材料上でのショット位置をコントロールし、パターン
の寸法データに基づいて該荷電粒子ビームの断面を整形
して、材料上の荷電粒子ビーム照射量を標準の１／２に
して材料上の所定の位置に整形した荷電粒子ビームをシ
ョットした。[Means for Solving the Problem] Therefore, the present invention divides the original IC pattern in the X direction or the Y direction so as to connect each corner position of the original IC pattern, and stores each divided pattern data in a first memory. the original IC pattern so as to connect each corner position of the original IC pattern.
The C pattern is divided in the Y direction or the X direction, each divided pattern data is stored in a second storage unit, and when drawing a pattern, the drawing data of each divided pattern is called from the first storage unit, and the called drawing data is The shot position of the charged particle beam on the material is controlled based on the shot position designation data of the division pattern, and the cross section of the charged particle beam is shaped based on the dimensional data of the division pattern to control the charged particle beam on the material. A shaped charged particle beam is shot at a predetermined position on the material with the particle beam irradiation amount being 1/2 of the standard amount, and then the drawing data of each divided pattern is called from the second storage section, and the called drawing data is Among the data, the shot position of the charged particle beam on the material is controlled based on the shot position designation data of the pattern, the cross section of the charged particle beam is shaped based on the pattern dimension data, and the charged particle beam on the material is A shaped charged particle beam was shot at a predetermined position on the material with the beam irradiation amount being 1/2 of the standard.
［実施例コ
第１図は本発明の一実施例として示した電子ビーム描画
装置の概略図である。[Embodiment] FIG. 1 is a schematic diagram of an electron beam lithography apparatus shown as an embodiment of the present invention.
図中１は電子銃、２はブランキング用偏向器、３はブラ
ンキング用絞り、４は集束レンズ、５は正方形状開口を
有する上方スリット、６は電子レンズ、７はＸ方向整形
用偏向器、８はＹ方向整形用偏向器、９は正方形状開口
を有する下方スリット、１０は投影レンズ、１１はＸ方
向位置決め用偏向器、１２はＹ方向位置決め用偏向器、
１３は材料、１４はＣＡＤ、１５は制御装置、１６，１
７．１８は磁気ディスク、１９はＸ方向カットユニット
、Ｙ方向カットユニットである。In the figure, 1 is an electron gun, 2 is a deflector for blanking, 3 is a diaphragm for blanking, 4 is a focusing lens, 5 is an upper slit with a square opening, 6 is an electron lens, and 7 is a deflector for shaping in the X direction. , 8 is a deflector for shaping in the Y direction, 9 is a lower slit having a square opening, 10 is a projection lens, 11 is a deflector for positioning in the X direction, 12 is a deflector for positioning in the Y direction,
13 is material, 14 is CAD, 15 is control device, 16,1
7.18 is a magnetic disk, 19 is an X-direction cutting unit, and a Y-direction cutting unit.
この様な装置において、例えば、前記第３図（ａ）に示
す如き原ＩＣパターンを描画する場合について、以下に
説明する。A case where, for example, an original IC pattern as shown in FIG. 3(a) is drawn using such an apparatus will be described below.
ＣＡＤ１４で設計された前記第３図（ａ）に示す如き原
ＩＣパターンのデータは制御装置１５により一旦、磁気
ディスク１６に記憶される。該制御装置は該磁気ディス
クから該原ＩＣパターンのデータを呼出して、Ｘ方向カ
ットユニット１９とＹ方向カットユニット２０に送る。The data of the original IC pattern as shown in FIG. 3(a) designed with the CAD 14 is temporarily stored in the magnetic disk 16 by the control device 15. The control device reads data of the original IC pattern from the magnetic disk and sends it to the X-direction cut unit 19 and the Y-direction cut unit 20.
先ず、Ｘ方向カットユニット１９は、第３図（ａ）に示
す如き原ＩＣパターンの各角位置間を結ぶ様に該原ＩＣ
パターンをＸ方向に切る事により、分割パターンＡ３
、Ｂ３ 、Ｃ３，Ｄ３□、Ｄ３２を作成する。そして、
該各分割パターンの描画パターンデータ（ショット位置
データ、寸法データ等）を磁気ディスク１７に記憶させ
る。一方、Ｙ方向カットユニット２０は、第３図（ａ）
に示す如き原ＩＣパターンの各角位置間を結ぶ様に該原
ＩＣパターンをＹ方向に切る事により、分割パターンＡ
４Ｈ，Ａ４２゜Ｂ、、Ｃ４，Ｄ４．Ｅ４を作成する。そ
して、該各分割パターンの描画パターンデータ（ショッ
ト位置データ、寸法データ等）を磁気ディスク１８に記
憶させる。First, the X-direction cutting unit 19 cuts the original IC pattern so as to connect each corner position of the original IC pattern as shown in FIG. 3(a).
By cutting the pattern in the X direction, split pattern A3
, B3, C3, D3□, and D32 are created. and,
The drawing pattern data (shot position data, dimension data, etc.) of each divided pattern is stored in the magnetic disk 17. On the other hand, the Y direction cutting unit 20 is shown in FIG. 3(a).
By cutting the original IC pattern in the Y direction so as to connect each corner position of the original IC pattern as shown in FIG.
4H, A42°B, C4, D4. Create E4. Then, the drawing pattern data (shot position data, dimension data, etc.) of each divided pattern is stored in the magnetic disk 18.
そして、パターン描画時、制御装置１５の指令により、
先ず、前記磁気ディスク１７から各分割パターンＡ３
、 Ｂ３ 、 Ｃ３、Ｄ３１． Ｄ３２のショッ
ト位置指定データ及びビームの寸法データ等を順次呼出
し、Ｘ方向ショット位置指定データをＸ方向位置決め用
偏向器１１に、Ｙ方向ショット位置指定データをＹ方向
位置決め用偏向器１２に夫々送る。又、ビームのＸ方向
寸法データをＸ方向整形用偏向器７に、Ｙ方向寸法デー
タをＸ方向整形用偏向器８に夫々送る。又、この際、前
記制御装置１５の指令に従って、１ショット時間が標準
の１／２になる様に、前記各ショット位置指定データを
調整する。而して、電子銃１からの電子ビームの断面は
前記Ｘ方向整形用偏向器７及びＸ方向整形用偏向器８に
より所定の寸法の幅、高さに整形される。そして、該整
形されたビームは、前記Ｘ方向位置決め用偏向器１１及
びＹ方向位置決め用偏向器１２により材料１１上の所定
の位置に標準の１／２の時間ショットされる。この結果
、材料上の所定の箇所に東回（ｂ）の各分割パターンＡ
３ 、 Ｂ３ 、 Ｃ３、Ｄ３１． Ｄ３２が描か
れる。Then, when drawing a pattern, according to a command from the control device 15,
First, each division pattern A3 is extracted from the magnetic disk 17.
, B3, C3, D31. The shot position designation data and beam dimension data of D32 are sequentially retrieved, and the X-direction shot position designation data is sent to the X-direction positioning deflector 11, and the Y-direction shot position designation data is sent to the Y-direction positioning deflector 12, respectively. Further, the X-direction dimension data of the beam is sent to the X-direction shaping deflector 7, and the Y-direction dimension data is sent to the X-direction shaping deflector 8, respectively. Also, at this time, according to the command from the control device 15, each shot position designation data is adjusted so that one shot time becomes 1/2 of the standard time. The cross section of the electron beam from the electron gun 1 is shaped into a predetermined width and height by the X-direction shaping deflector 7 and the X-direction shaping deflector 8. The shaped beam is then shot at a predetermined position on the material 11 for 1/2 of the standard time by the X-direction positioning deflector 11 and the Y-direction positioning deflector 12. As a result, each division pattern A of Tokai (b) is placed at a predetermined location on the material.
3, B3, C3, D31. D32 is drawn.
次に、制御装置１５の指令により、前記磁気ディスク１
８から各分割パターンＡ４１． Ａ４２． Ｂ４ 。Next, according to a command from the control device 15, the magnetic disk 1
8 to each division pattern A41. A42. B4.
Ｃ４，Ｄ４．Ｅ４のショット位置指定データ及びビーム
の寸法データ等を順次呼出し、Ｘ方向ショット位置指定
データをＸ方向位置決め用偏向器１１に、Ｙ方向ショッ
ト位置指定データをＹ方向位置決め用偏向器１２に夫々
送る。又、ビームのＸ方向寸法データをＸ方向整形用偏
向器７に、Ｙ方向寸法データをＸ方向整形用偏向器８に
夫々送る。C4, D4. The shot position designation data and beam dimension data of E4 are sequentially retrieved, and the X-direction shot position designation data is sent to the X-direction positioning deflector 11, and the Y-direction shot position designation data is sent to the Y-direction positioning deflector 12, respectively. Further, the X-direction dimension data of the beam is sent to the X-direction shaping deflector 7, and the Y-direction dimension data is sent to the X-direction shaping deflector 8, respectively.
又、この際、前記制御装置１５の指令に従って、１ショ
ット時間が標準の１／２になる様に、前記各ショット位
置指定データを調整する。而して、電子銃１からの電子
ビームの断面は前記Ｘ方向整形用偏向器７及びＹ方向整
形用偏向器８により所定の寸法の幅、高さに整形される
。そして、該整形されたビームは、前記Ｘ方向位置決め
用偏向器１１及びＹ方向位置決め用偏向器１２により材
料１１上の所定の位置に標準の１／２の時間ショットさ
れる。この結果、材料上の所定の箇所に東回（Ｃ）の各
分割パターン各分割パターンＡ４．、 Ａ４２＋ Ｂ
４ ＋ Ｃ４ｒ Ｄ４ ＋ Ｅ４が描かれる以上の
２回の描画により、全体から見て同一のパターンが標準
の１／２の１ショット時間で重ね描画された事になる。Also, at this time, according to the command from the control device 15, each shot position designation data is adjusted so that one shot time becomes 1/2 of the standard time. The cross section of the electron beam from the electron gun 1 is shaped into a predetermined width and height by the X-direction shaping deflector 7 and the Y-direction shaping deflector 8. The shaped beam is then shot at a predetermined position on the material 11 for 1/2 of the standard time by the X-direction positioning deflector 11 and the Y-direction positioning deflector 12. As a result, each division pattern of Tokai (C) and each division pattern A4. , A42+B
By drawing the pattern 4+C4rD4+E4 twice, the same pattern as a whole is drawn overlappingly in one shot time, which is 1/2 of the standard time.
この際、１回目の描画で微小分割パターンであった部分
が、２回目の描画では大分割パターンとなっており、又
、２回目の描画で微小分割パターンであった部分は、１
回目の描画では大分割パターンとなっているので、最終
的に出来上がった全体のパターンの電荷量は大略平均化
され、その為に、所定の大きさのパターンか形成される
。At this time, the part that was a minute division pattern in the first drawing becomes a large division pattern in the second drawing, and the part that was a minute division pattern in the second drawing becomes a 1
Since the second drawing is a large divided pattern, the amount of charge of the entire pattern finally completed is approximately averaged, and therefore a pattern of a predetermined size is formed.
尚、前記実施例では磁気ディスクを１７．１８と２個用
意したが、１個の磁気ディスクを用意して、その中の別
々の記憶部に前記Ｘ方向、Ｙ方向カットユニット１９．
２０夫々からのデータを記憶させる様にしてもよい。又
、標準の照射量を１／２にして２回に分けて照射したが
レジストの特性、パターンの特性によっては１／２×α
（αζ１）の補正を加えてもよい。又、３／８ ＋ ５
／８の様に２回の照射量を不等分にしてもよい。In the above embodiment, two magnetic disks 17 and 18 were prepared, but one magnetic disk was prepared, and the X-direction and Y-direction cutting units 19.
Data from each of the 20 units may be stored. Also, although the standard dose was halved and irradiated in two doses, depending on the characteristics of the resist and the characteristics of the pattern, the dose may be 1/2 x α.
A correction of (αζ1) may be added. Also, 3/8 + 5
The irradiation amount may be divided into two unequal doses as shown in /8.
又、本発明は、イオンビーム描画方法等の他の荷電粒子
ビーム方法にも応用可能である。The present invention is also applicable to other charged particle beam methods such as ion beam writing methods.
［発明の効果コ
本発明は、原ＩＣパターンの各角位置間を結ぶ様に該原
ＩＣパターンをＸ方向若しくはＹ方向に分割し、該各分
割パターンデータを第１記憶部に記憶させ、且つ、前記
原ＩＣパターンの各角位置間を結ぶ様に該原ＩＣパター
ンをＹ方向若しくはＸ方向に分割し、該各分割パターン
データを第２記憶部に記憶させ、パターン描画時、前記
第１記憶部から各分割パターンの描画データを呼出し、
該呼出しだ描画データの内、分割パターンのショット位
置指定データに基づいて荷電粒子ビームの材料上でのシ
ョット位置をコントロールし、分割パターンの寸法デー
タに基づいて該荷電粒子ビームの断面を整形して、材料
上の荷電粒子ビーム照射量を標準の１／２にして材料上
の所定の位置に整形した荷電粒子ビームをショットし、
次に、前記第２記憶部から各分割パターンの描画データ
を呼出し、該呼出しだ描画データの内、パターンのショ
ット位置指定データに基づいて荷電粒子ビームの材料上
でのショット位置をコントロールし、パターンの寸法デ
ータに基づいて該荷電粒子ビームの断面を整形して、材
料上の荷電粒子ビーム照射量を標準の１／２にして材料
上の所定の位置に整形した荷電粒子ビームをショットし
た。その結果、１回目の描画で微小分割パターンであっ
た部分が、２回目の描画では大分割パターンとなってお
り、又、２回目の描画で微小分割パターンであった部分
は、１回目の描画では大分割パターンとなって、全体か
ら見て同一のパターンが標準の１／２の１ショット時間
で重ね描画された事になり、最終的に出来上がった全体
のパターンの電荷量は大略平均化される。その為に、所
定の大きさのパターンが形成され、描画精度を向上させ
る事が出来る。[Effects of the Invention] The present invention divides the original IC pattern in the X direction or the Y direction so as to connect each corner position of the original IC pattern, and stores the data of each divided pattern in a first storage unit, and , the original IC pattern is divided in the Y direction or the X direction so as to connect each corner position of the original IC pattern, and each divided pattern data is stored in a second storage unit, and when the pattern is drawn, the original IC pattern is divided into the first storage unit. Call the drawing data of each division pattern from the
The shot position of the charged particle beam on the material is controlled based on the shot position designation data of the divided pattern in the called drawing data, and the cross section of the charged particle beam is shaped based on the dimensional data of the divided pattern. , shot a shaped charged particle beam at a predetermined position on the material with the charged particle beam irradiation amount on the material being 1/2 of the standard,
Next, the drawing data of each divided pattern is called from the second storage section, and the shot position of the charged particle beam on the material is controlled based on the shot position designation data of the pattern among the called drawing data, and the shot position of the charged particle beam on the material is controlled. The cross section of the charged particle beam was shaped based on the dimensional data, and the charged particle beam irradiation amount on the material was reduced to 1/2 of the standard, and the shaped charged particle beam was shot at a predetermined position on the material. As a result, the part that was a minute division pattern in the first drawing becomes a large division pattern in the second drawing, and the part that was a minute division pattern in the second drawing becomes the part that was a minute division pattern in the first drawing. Then, it becomes a large divided pattern, and the same pattern is drawn overlappingly in one shot time, which is 1/2 of the standard time, and the amount of charge of the entire pattern finally completed is roughly averaged. Ru. Therefore, a pattern of a predetermined size is formed, and drawing accuracy can be improved.
第１図は本発明の一実施例として示した電子ビーム描画
装置の概略図、第２図は従来の原ＩＣパターンの分割操
作を説明する為に用いたもの、第３図は従来の原ＩＣパ
ターン分割操作及び本発明の原ＩＣパターン分割操作を
説明する為に用いたものである。
１：電子銃 ２ニブランキング用偏向器３ニブランキ
ング用絞り ４：集束レンズ５：上方スリット
６：電子レンズ７：Ｘ方向整形用偏向器
８；Ｙ方向整形用偏向器
９：下方スリット １０：投影レンズ１１：Ｘ方
向位置決め用偏向器
１２：Ｙ方向位置決め用偏向器
１３：材料 １４ ： ＣＡＤ１５：制
御装置
１６゜
１７゜
１８：磁気ディスク
１９：Ｘ方向カットユニット
２０：Ｙ方向カットユニットFIG. 1 is a schematic diagram of an electron beam lithography system shown as an embodiment of the present invention, FIG. 2 is used to explain a conventional original IC pattern dividing operation, and FIG. 3 is a diagram of a conventional original IC pattern. This figure is used to explain the pattern division operation and the original IC pattern division operation of the present invention. 1: Electron gun 2 Deflector for nib blanking 3 Aperture for nib blanking 4: Focusing lens 5: Upper slit
6: Electronic lens 7: Deflector for X-direction shaping 8; Deflector for Y-direction shaping 9: Lower slit 10: Projection lens 11: Deflector for X-direction positioning 12: Deflector for Y-direction positioning 13: Material 14: CAD15 :Control device 16゜17゜18:Magnetic disk 19:X direction cutting unit 20:Y direction cutting unit
Claims (1)
ーンをＸ方向若しくはＹ方向に分割し、該各分割パター
ンデータを第１記憶部に記憶させ、且つ、前記原ＩＣパ
ターンの各角位置間を結ぶ様に該原ＩＣパターンをＹ方
向若しくはＸ方向に分割し、該各分割パターンデータを
第２記憶部に記憶させ、パターン描画時、前記第１記憶
部から各分割パターンの描画データを呼出し、該呼出し
た描画データの内、分割パターンのショット位置指定デ
ータに基づいて荷電粒子ビームの材料上でのショット位
置をコントロールし、分割パターンの寸法データに基づ
いて該荷電粒子ビームの断面を整形して、材料上の荷電
粒子ビーム照射量を標準の１／２にして材料上の所定の
位置に整形した荷電粒子ビームをショットし、次に、前
記第２記憶部から各分割パターンの描画データを呼出し
、該呼出した描画データの内、パターンのショット位置
指定データに基づいて荷電粒子ビームの材料上でのショ
ット位置をコントロールし、パターンの寸法データに基
づいて該荷電粒子ビームの断面を整形して、材料上の荷
電粒子ビーム照射量を標準の１／２にして材料上の所定
の位置に整形した荷電粒子ビームをショットした荷電粒
子ビーム描画方法。The original IC pattern is divided in the X direction or the Y direction so as to connect each corner position of the original IC pattern, and each divided pattern data is stored in a first storage unit, and each corner position of the original IC pattern is Divide the original IC pattern in the Y direction or the X direction so as to connect the gaps, store each divided pattern data in a second storage section, and when drawing the pattern, draw the drawing data of each divided pattern from the first storage section. The shot position of the charged particle beam on the material is controlled based on the shot position specification data of the divided pattern among the called drawing data, and the cross section of the charged particle beam is shaped based on the dimension data of the divided pattern. Then, the charged particle beam irradiation amount on the material is reduced to 1/2 of the standard amount, and the shaped charged particle beam is shot at a predetermined position on the material, and then the drawing data of each divided pattern is read from the second storage section. , controls the shot position of the charged particle beam on the material based on the pattern shot position specification data of the called writing data, and shapes the cross section of the charged particle beam based on the pattern dimension data. A charged particle beam drawing method in which the charged particle beam irradiation amount on the material is reduced to 1/2 of the standard amount and a shaped charged particle beam is shot at a predetermined position on the material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17572290A JPH0463419A (en) | 1990-07-03 | 1990-07-03 | Charged particle beam drawing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17572290A JPH0463419A (en) | 1990-07-03 | 1990-07-03 | Charged particle beam drawing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0463419A true JPH0463419A (en) | 1992-02-28 |
Family
ID=16001097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17572290A Pending JPH0463419A (en) | 1990-07-03 | 1990-07-03 | Charged particle beam drawing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0463419A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812412A (en) * | 1995-04-28 | 1998-09-22 | Mitsubishi Denki Kabushiki Kaisha | Charged beam pattern data generating method and a charged beam pattern data generating apparatus |
| US6877855B2 (en) | 2003-07-08 | 2005-04-12 | Dave Ng | Spectacles with peripheral lens support |
| US7249844B2 (en) | 2003-05-30 | 2007-07-31 | Hoya Corporation | Holding structure of spectacle lens, repair method for the same, and spectacles |
-
1990
- 1990-07-03 JP JP17572290A patent/JPH0463419A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812412A (en) * | 1995-04-28 | 1998-09-22 | Mitsubishi Denki Kabushiki Kaisha | Charged beam pattern data generating method and a charged beam pattern data generating apparatus |
| US7249844B2 (en) | 2003-05-30 | 2007-07-31 | Hoya Corporation | Holding structure of spectacle lens, repair method for the same, and spectacles |
| US7404635B2 (en) | 2003-05-30 | 2008-07-29 | Hoya Corporation | Holding structure of spectacle lens, repair method for the same, and spectacles |
| US6877855B2 (en) | 2003-07-08 | 2005-04-12 | Dave Ng | Spectacles with peripheral lens support |
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