JPH0461635A - Semiconductor element for optical disk - Google Patents

Semiconductor element for optical disk

Info

Publication number
JPH0461635A
JPH0461635A JP2169118A JP16911890A JPH0461635A JP H0461635 A JPH0461635 A JP H0461635A JP 2169118 A JP2169118 A JP 2169118A JP 16911890 A JP16911890 A JP 16911890A JP H0461635 A JPH0461635 A JP H0461635A
Authority
JP
Japan
Prior art keywords
light
semiconductor laser
silicon substrate
shaped groove
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2169118A
Other languages
Japanese (ja)
Inventor
Keiichi Kubota
恵一 窪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2169118A priority Critical patent/JPH0461635A/en
Publication of JPH0461635A publication Critical patent/JPH0461635A/en
Pending legal-status Critical Current

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  • Optical Head (AREA)

Abstract

PURPOSE:To miniaturize the device, to make a moving part light in weight, and to execute an access at a high speed by hybridizing a semiconductor laser, a monitor photodetector and a signal detecting photodetector on a silicon substrate having a V-shaped groove. CONSTITUTION:A monitor photodetector 4, and a signal photodetector 5 are formed on a silicon substrate 1 having a V-shaped groove 2, a semiconductor laser 3 is fixed, and also, subjected to wiring on a silicon substrate 1, and an emitted light front is attached so as to become parallel to the V-shaped groove 2. Accordingly, an emitted light from the front is emitted without being obstructed by the silicon substrate 1, reflected by the slant face of the V-shaped groove 2 and advances in the direction vertical to the substrate 1 surface. Subsequently, an emitted light from the rear face of the semiconductor laser 3 is inputted to the monitor photodetector 4, and the light quantity of the semiconductor laser 3 is monitored. Also, the reflected light is detected by the signal photodetector 5. In such a way, the device is miniaturized, the moving part is made light in weight, and the access can be executed at a high speed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光ディスク用光ヘッドに用いられる光半導体素
子に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical semiconductor element used in an optical head for an optical disk.

〔従来の技術〕[Conventional technology]

近年、大容量で安価なメモリとして光ディスクがOA用
ラフアイルメモリ画像メモリとして実用され始めている
。しかしながら、光ディスクは従来の磁気ディスクと比
較して記憶容量では優っているものの、データの転送速
度やアクセス速度は遅い。そのため、光ディスクの高速
化を実現するための、光ディスクの高速回転や光ヘッド
の小型化の開発が行われている。
In recent years, optical disks, which are large-capacity and inexpensive memories, have begun to be put into practical use as rough-fail image memories for office automation. However, although optical disks are superior in storage capacity to conventional magnetic disks, their data transfer and access speeds are slow. Therefore, in order to achieve higher speeds of optical discs, efforts are being made to rotate optical discs at higher speeds and to miniaturize optical heads.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

光ヘッドの小型化に間しては、光集積型や分離型の開発
が行われているが、光集積型の光ヘッドは、半導体レー
ザ、レンズ及び光検出器を一体化した光ヘツド素子が提
案されている。しかしながら、効率のよい薄膜レンズの
実現が難しく、実用化はまだ先の技術として考えられて
いる。また、分離型の光ヘッドは、光ヘッドの眼球に相
当する対物レンズとアクチュエータとを移動し、光検出
系を固定したものである。こうすることによって、移動
部の軽量化が図られ、光ヘッドのアクセス時間の短縮化
が実現されている。しかし、光ビームを固定部から移動
部へ照射させるためには、移動部の精度が要求されるが
、従来の光ヘッドでは信頼性にも問題点があり、装置の
小型化は必ずしも実現されていない。
In order to miniaturize optical heads, optical integrated and separated types are being developed, but integrated optical heads have an optical head element that integrates a semiconductor laser, a lens, and a photodetector. Proposed. However, it is difficult to realize an efficient thin film lens, and practical application is still considered to be a technology in the future. In addition, a separate type optical head has a moving objective lens and an actuator, which correspond to the eyeballs of the optical head, and a fixed photodetection system. By doing so, the weight of the moving section is reduced, and the access time of the optical head is shortened. However, in order to irradiate a light beam from a fixed part to a moving part, precision of the moving part is required, but conventional optical heads also have problems with reliability, and miniaturization of the device is not necessarily achieved. do not have.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の光ディスク用半導体素子は、光検出器の基板上
に半導体レーザをハイブリッドに集積したものであって
、7字形状の溝をもつシリコン基板上に半導体レーザを
発光面が前記V渭の縁に平行になるように設置し、前記
半導体レーザの後方出射光を受光する第1の受光素子と
、複数の外部光を受光する第2の受光素子とを前記シリ
コン基板上に形成して構成される。
The semiconductor element for an optical disk of the present invention is one in which a semiconductor laser is integrated on a substrate of a photodetector in a hybrid manner. A first light-receiving element that receives the rear emitted light of the semiconductor laser and a second light-receiving element that receives a plurality of external lights are formed on the silicon substrate so as to be parallel to each other. Ru.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す図である。第1図にお
いて、V字型溝2をもつシリコン基板1上にモニタ受光
素子4.信号受光素子5が形成されている。半導体レー
ザ3は、このシリコン基板1上に、例えば、半田融着に
よって、固定且つ配線されている。半導体レーザ3は出
射光前面がV字型溝2に平行になるように取り付けられ
るので、前面からの出射光はシリコン基板1に防げられ
ることなく出射され、■字型溝2の斜面に反射して基板
面に垂直の方向に進行する。半導体レーザ3の後面から
の出射光はモニタ受光素子4に入力し、半導体レーザ3
の光量がモニタされる。また、光ヘッドではディスク媒
体からの反射光を検出することにより情報信号及びサー
ボ信号の読出しが行われ、この反射光を検出する信号受
光素子5がシリコン基板1上に形成されている。この信
号受光素子5は情報信号、サーボ信号の両信号を受光す
るために複数に分割された受光素子である。半導体レー
ザ3への給電、及びこれら各受光素子4,5からの検出
信号出力は電極を介して行われる。
FIG. 1 is a diagram showing an embodiment of the present invention. In FIG. 1, a monitor light receiving element 4. is mounted on a silicon substrate 1 having a V-shaped groove 2. A signal light receiving element 5 is formed. The semiconductor laser 3 is fixed and wired on the silicon substrate 1 by, for example, solder fusion. Since the semiconductor laser 3 is mounted so that the front surface of the emitted light is parallel to the V-shaped groove 2, the light emitted from the front surface is not blocked by the silicon substrate 1 and is reflected on the slope of the V-shaped groove 2. and moves in a direction perpendicular to the substrate surface. The light emitted from the rear surface of the semiconductor laser 3 is input to the monitor light receiving element 4, and the light emitted from the rear surface of the semiconductor laser 3 is
The amount of light is monitored. Further, in the optical head, information signals and servo signals are read by detecting reflected light from the disk medium, and a signal light receiving element 5 for detecting this reflected light is formed on the silicon substrate 1. This signal light receiving element 5 is a light receiving element divided into a plurality of parts to receive both information signals and servo signals. Power is supplied to the semiconductor laser 3 and detection signals are output from each of the light receiving elements 4 and 5 through electrodes.

シリコン基板1にV字型溝2を形成するには、反応性エ
ツチングにより、シリコン基板の45゜エツチング容易
軸方向を選択すればよい。また、マイクロ的に機械的加
工を行うことも可能である。各受光素子4,5は通常の
拡散プロセスによってシリコン受光素子を形成すればよ
い。更に、半導体レーザ3は、装着部分のシリコン基板
1上に電極6を構成し、低融点半田を用いて各素子を固
着できる。半導体レーザ3と各受光素子4.5間の位置
合わせは上記の方向によってミクロンオーダの精度で可
能である。
In order to form the V-shaped groove 2 in the silicon substrate 1, it is sufficient to select a 45° etching easy axis direction of the silicon substrate by reactive etching. It is also possible to perform micro mechanical processing. Each of the light receiving elements 4 and 5 may be formed as a silicon light receiving element by a normal diffusion process. Further, in the semiconductor laser 3, an electrode 6 is formed on the silicon substrate 1 at the mounting portion, and each element can be fixed using low melting point solder. The alignment between the semiconductor laser 3 and each light receiving element 4.5 can be performed with accuracy on the order of microns by the above-mentioned directions.

第2図は本発明による光半導体素子を用いた光ヘッドの
原理を説明する図である。第2図において、光ヘッドは
へラドキャップ13内に光半導体素子10.ホログラム
素子12及び対物レンズ11を納め、ヘッドキャップ1
3全体を支持筐体15で保持する構成になっている。光
半導体素子10から出射された光は、ホログラム素子1
2及び対物レンズ11を経てディスク16上に集光され
る。ディスク16からの反射光は再び対物レンズ11を
透過し、ホログラム素子12で回折され、光半導体素子
10に戻る。この回折光は、第1図に示す信号受光素子
5に入射し、ディスク反射光に含まれる情報信号及びサ
ーボ信号が検出される。ヘッドキャップ13全体は、ア
クチュエータ14でディスク方向く矢印A方向〉に移動
してフォーカシング制御が行われ、更に、支持筐体15
をこれと垂直方向(矢印B方向)に移動することによっ
てトラッキング制御が行われる。
FIG. 2 is a diagram illustrating the principle of an optical head using an optical semiconductor element according to the present invention. In FIG. 2, the optical head includes an optical semiconductor element 10. The hologram element 12 and objective lens 11 are housed in the head cap 1.
3 is entirely supported by a support casing 15. The light emitted from the optical semiconductor element 10 is transmitted to the hologram element 1
2 and an objective lens 11, the light is focused onto a disk 16. The reflected light from the disk 16 passes through the objective lens 11 again, is diffracted by the hologram element 12, and returns to the optical semiconductor element 10. This diffracted light enters the signal light receiving element 5 shown in FIG. 1, and the information signal and servo signal contained in the disk reflected light are detected. The entire head cap 13 is moved in the direction of the disk (in the direction of arrow A) by an actuator 14 to perform focusing control.
Tracking control is performed by moving in a direction perpendicular to this (in the direction of arrow B).

第3図は本発明による光半導体素子を用いた光ヘッドの
動作原理を説明する図である。第3図において、半導体
レーザ3からの出射光がホログラム素子12及び対物レ
ンズ11を経てディスク16に集光し、この反射光は再
び対物レンズ11を経てホログラム素子12に入射する
。ホログラム素子12からの回折光は、信号受光素子5
に入射し、その光量が検出される。ホログラム素子12
は、例えば、第3図に示すように、H,、H2H3及び
H4に4分割されている。また、受光素子5は、例えば
、s、、s2.SS、s、、S。
FIG. 3 is a diagram illustrating the operating principle of an optical head using an optical semiconductor element according to the present invention. In FIG. 3, the emitted light from the semiconductor laser 3 passes through the hologram element 12 and the objective lens 11 and is focused on the disk 16, and this reflected light passes through the objective lens 11 again and enters the hologram element 12. The diffracted light from the hologram element 12 is transmitted to the signal light receiving element 5.
The amount of light is detected. Hologram element 12
For example, as shown in FIG. 3, it is divided into four parts: H, , H2H3, and H4. Further, the light receiving element 5 includes, for example, s, s2. SS,s,,S.

及びS6に6分割された素子が用いられている。and S6, an element divided into six is used.

そして、ホログラム素子12に光が入射すると、領域H
1からの回折光は受光素子S、、S2に、領域H2から
の回折光は受講素子S3.S4に、領域H3からの回折
光はS6に、領域H4からの回折光はSSにそれぞれ集
光する。ここで、フ才−カスエラー信号は、領域H1と
H2とがナイフェツジと同様の役割を果たすので、受光
素子S1.S2及びS、、S4のそれぞれの差信号とし
て得られる。また、トラックエラー信号は、領域H3,
H4の光量強度の差(プッシュプル信号)として得られ
るので、受光素子S5.s6の差信号を求めればよい。
Then, when light enters the hologram element 12, the area H
The diffracted light from area H2 is transmitted to the receiving elements S3, . At S4, the diffracted light from the area H3 is focused at S6, and the diffracted light from the area H4 is focused at SS. Here, since the regions H1 and H2 play the same role as a knife, the focus error signal is generated by the light receiving element S1. It is obtained as a difference signal between S2, S, and S4. Also, the track error signal is in the area H3,
Since it is obtained as a difference in light amount intensity (push-pull signal) of light receiving element S5.H4. What is necessary is to find the difference signal of s6.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の光ディスク用光半導体素
子は、■字形状の溝をもつシリコン基板上に半導体レー
ザとモニタ受光素子及び信号検出受光素子をハイブリッ
ド化することによって、これらの素子を一体化した光半
導体素子が実現できる8本発明の素子を用いることによ
って、小形、且つ軽量な光ヘッドが構成でき、光ディス
クの高速化を実現することができる。
As explained above, the optical semiconductor device for optical disks of the present invention is made by hybridizing a semiconductor laser, a monitor light-receiving element, and a signal detection light-receiving element on a silicon substrate having a ■-shaped groove, thereby integrating these elements. By using the element of the present invention, a small and lightweight optical head can be constructed, and the speed of the optical disc can be increased.

説明する図、第3図は本発明の光半導体素子を用いた光
ヘッドの動作原理を説明する図である。
FIG. 3 is a diagram illustrating the operating principle of an optical head using the optical semiconductor element of the present invention.

l・・・シリコン基板、2・・・V字型溝、3・・・半
導体レーザ、4,5・・・受光素子、6・・・電極、1
o・・・光半導体素子、11・・・レンズ、12・・・
ホログラム素子、13・・・ヘッドキャップ、14・・
・アクチュエータ。
1... Silicon substrate, 2... V-shaped groove, 3... Semiconductor laser, 4, 5... Light receiving element, 6... Electrode, 1
o... Optical semiconductor element, 11... Lens, 12...
Hologram element, 13... Head cap, 14...
・Actuator.

Claims (1)

【特許請求の範囲】[Claims]  V字形状の溝をもつシリコン基板上に半導体レーザを
発光面が前記V溝の縁に平行になるように設置し、前記
半導体レーザの後方出射光を受光する第1の受光素子と
、複数の外部光を受光する第2の受光素子とを前記シリ
コン基板上に形成したことを特徴とする光ディスク用光
半導体素子。
A semiconductor laser is installed on a silicon substrate having a V-shaped groove so that its light emitting surface is parallel to the edge of the V-shaped groove, a first light receiving element that receives rear emitted light from the semiconductor laser, and a plurality of An optical semiconductor device for an optical disk, characterized in that a second light receiving element for receiving external light is formed on the silicon substrate.
JP2169118A 1990-06-27 1990-06-27 Semiconductor element for optical disk Pending JPH0461635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2169118A JPH0461635A (en) 1990-06-27 1990-06-27 Semiconductor element for optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2169118A JPH0461635A (en) 1990-06-27 1990-06-27 Semiconductor element for optical disk

Publications (1)

Publication Number Publication Date
JPH0461635A true JPH0461635A (en) 1992-02-27

Family

ID=15880631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2169118A Pending JPH0461635A (en) 1990-06-27 1990-06-27 Semiconductor element for optical disk

Country Status (1)

Country Link
JP (1) JPH0461635A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997050158A1 (en) * 1996-06-24 1997-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5882246A (en) * 1995-06-06 1999-03-16 Kotobuki Eng. & Mfg. Co., Ltd. Wet agitating ball mill and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446243A (en) * 1987-08-13 1989-02-20 Sony Corp Optical pickup device
JPH01150244A (en) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd Optical head device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446243A (en) * 1987-08-13 1989-02-20 Sony Corp Optical pickup device
JPH01150244A (en) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd Optical head device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882246A (en) * 1995-06-06 1999-03-16 Kotobuki Eng. & Mfg. Co., Ltd. Wet agitating ball mill and method
WO1997050158A1 (en) * 1996-06-24 1997-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6185237B1 (en) 1996-06-24 2001-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser

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