JPH0461328A - Washing of teflon carrier - Google Patents
Washing of teflon carrierInfo
- Publication number
- JPH0461328A JPH0461328A JP2173920A JP17392090A JPH0461328A JP H0461328 A JPH0461328 A JP H0461328A JP 2173920 A JP2173920 A JP 2173920A JP 17392090 A JP17392090 A JP 17392090A JP H0461328 A JPH0461328 A JP H0461328A
- Authority
- JP
- Japan
- Prior art keywords
- teflon
- container
- hot water
- pressure
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004809 Teflon Substances 0.000 title claims abstract description 32
- 229920006362 Teflon® Polymers 0.000 title claims abstract description 32
- 238000005406 washing Methods 0.000 title abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims description 16
- 235000012431 wafers Nutrition 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000000969 carrier Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 abstract description 8
- 238000009835 boiling Methods 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/106—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by boiling the liquid
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体集積回路製造において使用する半導体ウ
ェハを収納するキャリアの洗浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for cleaning a carrier that houses semiconductor wafers used in the manufacture of semiconductor integrated circuits.
〈従来の技術〉
半導体集積回路製造工程では、高い歩留りを確保するた
めに、ウェハに付着している異物を除去する等の洗浄が
頻繁に行われている。洗浄にあたり、ウェハをテフロン
キャリアに収納した状態のままて、洗浄液の中に浸漬す
る。その後、純水により洗浄するか、テフロンキャリア
の網目構造のすき間にしみ込んだ洗浄液は完全には除去
できない。このテフロンキャリアにしみ込んだ洗浄液は
、徐々に外部に放出され、収納されているウエノ１を汚
染したり、また、ＩＰＡ（イソプロピルアルコール）ベ
ーパ乾燥時に、昇温されたキャリアから洗浄液かしみ出
すなとにより、ウエノ１の乾燥むらか発生じる。<Prior Art> In the semiconductor integrated circuit manufacturing process, cleaning is frequently performed to remove foreign matter adhering to the wafer in order to ensure a high yield. For cleaning, the wafer is immersed in a cleaning solution while still being housed in a Teflon carrier. Thereafter, the carrier is washed with pure water, or the cleaning liquid that has seeped into the gaps in the network structure of the Teflon carrier cannot be completely removed. The cleaning liquid that has soaked into the Teflon carrier will gradually be released to the outside and contaminate the stored Ueno 1. Also, when drying with IPA (isopropyl alcohol) vapor, the cleaning liquid will seep out from the heated carrier. This causes uneven drying of Ueno 1.
このため、半導体集積回路製造工程で使用されるテフロ
ンキャリアは定期的に洗浄か行われている。この場合の
洗浄は、温純水により行った後、空気あるいは窒素雰囲
気中で１００〜１５０°Ｃでベーキングする。For this reason, Teflon carriers used in the semiconductor integrated circuit manufacturing process are regularly cleaned. In this case, cleaning is performed using warm pure water, followed by baking at 100 to 150°C in an air or nitrogen atmosphere.
〈発明が解決しようとする課題〉
ところが、上述した従来の技術によるテフロンキャリア
の洗浄方法では、テフロンキャリアにしみ込んだ洗浄液
を完全に取り除くことはできず、半導体集積回路製造工
程において、その後にそのテフロンキャリア上に収納さ
れたウェハを汚染するという問題があった。<Problems to be Solved by the Invention> However, with the conventional cleaning method for Teflon carriers described above, it is not possible to completely remove the cleaning liquid that has soaked into the Teflon carriers, and the Teflon carriers are then removed during the semiconductor integrated circuit manufacturing process. There was a problem of contaminating the wafers housed on the carrier.
以上のことに鑑み、本発明は従来の方法よりさらに効率
よくテフロンキャリアにしみ込んた洗浄液を取り除く方
法を提供することを目的とする。In view of the above, an object of the present invention is to provide a method for removing cleaning liquid that has soaked into a Teflon carrier more efficiently than conventional methods.
く課題を解決するための手段〉
上記の目的を達成するための方法を、実施例を達成する
ための装置を示す第１図を参照しつつ説明すると、温純
水３を入れた槽２内にテフロンキャリア１を浸漬した状
態のその槽２を容器４内に収納する。その後その容器４
内を温純水３が沸騰する圧力に減圧し、温純水３を沸騰
した状態に保つことにより温純水３内のテフロンキャリ
ア１の洗浄を行う。Means for Solving the Problem> A method for achieving the above object will be explained with reference to FIG. 1 showing an apparatus for achieving the embodiment. The tank 2 in which the carrier 1 is immersed is stored in a container 4. Then that container 4
The Teflon carrier 1 in the warm pure water 3 is cleaned by reducing the pressure inside the warm pure water 3 to a boiling pressure and keeping the warm pure water 3 in a boiling state.
く作用〉
テフロンキャリアを、温純水を入れた槽内に浸漬し、そ
の槽が収納されている容器内をその温純水か沸騰する圧
力に減圧するので、テフロン高分子の膨張により、その
網目構造のすき間か、拡がるので、すき間にしみ込んで
いる洗浄液か温純水中に放出されやすくなる。Effect> The Teflon carrier is immersed in a tank containing warm pure water, and the pressure inside the container containing the tank is reduced to the pressure at which the warm pure water boils, so the expansion of the Teflon polymer closes the gaps in the network structure. Otherwise, it will spread, making it easier for it to be released into the cleaning solution or warm pure water that has seeped into the crevices.
〈実施例〉
第１図は本発明の方法を実施するための装置を示す構成
図である。<Example> FIG. 1 is a block diagram showing an apparatus for carrying out the method of the present invention.
容器４は、例えばアスピレータ等の排気手段（図示せず
）に接続されている。容器４内には槽２か収納されてい
る。その槽２は石英等からなり、温純水３が入れられて
いる。この温純水３中にテフロンキャリア１か浸漬され
た状態で、温純水３が沸騰する圧力にまで、上述の排気
手段により容器４内は減圧され、その圧力か保持される
。The container 4 is connected to exhaust means (not shown), such as an aspirator. A tank 2 is housed in the container 4. The tank 2 is made of quartz or the like, and contains warm pure water 3. With the Teflon carrier 1 immersed in this warm pure water 3, the pressure inside the container 4 is reduced by the above-mentioned exhaust means to a pressure at which the warm pure water 3 boils, and that pressure is maintained.
以上述べた構成の装置を用いて本発明の方法か実施され
る。以下に詳細に説明する。The method of the present invention is carried out using the apparatus configured as described above. This will be explained in detail below.
実施例１）
（１）試験片の作成
表面積３５ ｃｍ”のテフロン片を硫酸に２０日間浸漬
する。その後、このテフロン片にしみ込んだ硫酸イオン
濃度をイオンクロマトグラフで分析する。その結果、抽
出液中には、硫酸イオンは４１．９１ｇ／ｃｍ２検出さ
れた。Example 1) (1) Creation of a test piece A Teflon piece with a surface area of 35 cm is immersed in sulfuric acid for 20 days.Then, the concentration of sulfate ions that have soaked into the Teflon piece is analyzed using an ion chromatograph.As a result, the extracted liquid Inside, 41.91 g/cm2 of sulfate ions were detected.
（２）上述の試験片を用いた本発明方法上述のテフロン
片を用いて行う本発明の方法は６０°Ｃの温純水が入れ
られた槽２内に上述のテフロン片を浸漬し、６００ｍｍ
Ｈｇの減圧下で、５分間洗浄後、自然乾燥させ、このテ
フロン片にしみ込んだ硫酸イオン濃度をイオンクロマト
グラフで分析する。また比較例として、６０″Ｃの温純
水中で、５分間洗浄後、自然乾燥させ、このテフロン片
にしみ込んだ硫酸イオン濃度をイオンクロマトグラフで
分析する。以上の結果を表に示す。(2) Method of the present invention using the above-mentioned test piece The method of the present invention using the above-mentioned Teflon piece is to immerse the above-mentioned Teflon piece in a tank 2 containing warm pure water at 60°C.
After washing for 5 minutes under a reduced pressure of Hg, the piece is allowed to dry naturally, and the concentration of sulfate ions soaked into the Teflon piece is analyzed by ion chromatography. As a comparative example, the Teflon piece was washed for 5 minutes in warm pure water, air-dried, and the concentration of sulfate ions infiltrated into the Teflon piece was analyzed by ion chromatography.The above results are shown in the table.
表 方法によれば、硫酸イオン除去率は１０％向上した。table According to the method, the sulfate ion removal rate was improved by 10%.
実施例２）
１２０°Ｃの硫酸と過酸化水素水の混合液で１５分間ボ
イルしたテフロンキャリアに新品のウェハ（４インチ）
をキャリアの端に入れ、ＴＰＡベーパ乾燥を行い、その
後ウェハ上を光散乱方式の異物検査装置で検査を行う。Example 2) A new wafer (4 inches) was placed on a Teflon carrier boiled for 15 minutes in a mixture of sulfuric acid and hydrogen peroxide at 120°C.
is placed in the end of the carrier and dried with TPA vapor, and then the wafer is inspected using a light scattering type foreign matter inspection device.
第３図はその検査の結果のウェハ表面の図である。一方
、上述と同じ条件てボイルしたテフロンキャリアを６０
０ｍｍＨｇの減圧下で５分間洗浄後、上述と同様にＩＰ
Ａベーパ乾燥を行い、その後ウェハ上を光散乱方式の異
物検査装置て検査を行う。第２図はその検査の結果のウ
ェハ表面の図である。FIG. 3 is a diagram of the wafer surface as a result of the inspection. On the other hand, a Teflon carrier boiled under the same conditions as above was heated to 60
After washing for 5 minutes under reduced pressure of 0 mmHg, IP
A: Vapor drying is performed, and then the wafer is inspected using a light scattering foreign matter inspection device. FIG. 2 is a diagram of the wafer surface as a result of the inspection.
以上の結果から、後者ではウェハ表面上に多量の異物５
が検出された。これはテフロンキャリアから放出される
硫酸による乾燥むらである。一方、前者では異物５はほ
とんど検出されず、したかって乾燥むらが発生していな
いことが明らかである。From the above results, in the latter case, a large amount of foreign matter 5 was found on the wafer surface.
was detected. This is due to uneven drying due to sulfuric acid released from the Teflon carrier. On the other hand, in the former case, almost no foreign matter 5 was detected, so it is clear that uneven drying did not occur.
〈発明の効果〉
以上説明したように、本発明によれば、温純水か沸騰す
る圧力下の沸騰水中で洗浄するので、従来の方法に比し
て効果的に洗浄液を除去することかできるとともに、半
導体集積回路製造工程において、キャリアに収納されて
いるウェハ汚染を低減てきる。その結果、製品の歩留り
か向上する。<Effects of the Invention> As explained above, according to the present invention, since cleaning is performed in warm pure water or boiling water under boiling pressure, cleaning liquid can be removed more effectively than in conventional methods. In the semiconductor integrated circuit manufacturing process, contamination of wafers housed in carriers can be reduced. As a result, the product yield is improved.
第１図は本発明実施例を実施するための装置の構成図、
第２図および第３図は本発明実施例の効果をあられす図
である。
１・・・テフロンキャリア
２・・・槽
３・・・温純水
４・・・容器
５・・・異物FIG. 1 is a configuration diagram of an apparatus for carrying out an embodiment of the present invention;
FIGS. 2 and 3 are diagrams showing the effects of the embodiment of the present invention. 1... Teflon carrier 2... Tank 3... Warm pure water 4... Container 5... Foreign matter
Claims (1)
あって、温純水を入れた槽内に上記テフロンキャリアを
浸漬し、その状態の上記槽を容器内に収納し、その後そ
の容器内を上記温純水が沸騰する圧力に減圧することを
特徴とするテフロンキャリアの洗浄方法。A method for cleaning a Teflon carrier that stores wafers, the Teflon carrier is immersed in a tank containing warm pure water, the tank in that state is stored in a container, and then the warm pure water is boiled in the container. A method for cleaning Teflon carriers characterized by reducing pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2173920A JPH0461328A (en) | 1990-06-29 | 1990-06-29 | Washing of teflon carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2173920A JPH0461328A (en) | 1990-06-29 | 1990-06-29 | Washing of teflon carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0461328A true JPH0461328A (en) | 1992-02-27 |
Family
ID=15969529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2173920A Pending JPH0461328A (en) | 1990-06-29 | 1990-06-29 | Washing of teflon carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0461328A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0693001A1 (en) * | 1992-11-30 | 1996-01-24 | Massachusetts Institute Of Technology | Cleaning and finishing a ceramic mold |
| US5660621A (en) * | 1995-12-29 | 1997-08-26 | Massachusetts Institute Of Technology | Binder composition for use in three dimensional printing |
| US5814161A (en) * | 1992-11-30 | 1998-09-29 | Massachusetts Institute Of Technology | Ceramic mold finishing techniques for removing powder |
| US6112804A (en) * | 1995-10-31 | 2000-09-05 | Massachusetts Institute Of Technology | Tooling made by solid free form fabrication techniques having enhanced thermal properties |
-
1990
- 1990-06-29 JP JP2173920A patent/JPH0461328A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0693001A1 (en) * | 1992-11-30 | 1996-01-24 | Massachusetts Institute Of Technology | Cleaning and finishing a ceramic mold |
| EP0693001A4 (en) * | 1992-11-30 | 1996-11-27 | Massachusetts Inst Technology | Cleaning and finishing a ceramic mold |
| US5814161A (en) * | 1992-11-30 | 1998-09-29 | Massachusetts Institute Of Technology | Ceramic mold finishing techniques for removing powder |
| US6109332A (en) * | 1992-11-30 | 2000-08-29 | Massachusetts Institute Of Technology | Ceramic mold finishing |
| US6112804A (en) * | 1995-10-31 | 2000-09-05 | Massachusetts Institute Of Technology | Tooling made by solid free form fabrication techniques having enhanced thermal properties |
| US6354361B1 (en) | 1995-10-31 | 2002-03-12 | Massachusetts Institute Of Technology | Tooling having advantageously located heat transfer channels |
| US5660621A (en) * | 1995-12-29 | 1997-08-26 | Massachusetts Institute Of Technology | Binder composition for use in three dimensional printing |
| US5851465A (en) * | 1995-12-29 | 1998-12-22 | Massachusetts Institute Of Technology | Binder composition for use in three dimensional printing |
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