JPH046113B2 - - Google Patents
Info
- Publication number
- JPH046113B2 JPH046113B2 JP58040342A JP4034283A JPH046113B2 JP H046113 B2 JPH046113 B2 JP H046113B2 JP 58040342 A JP58040342 A JP 58040342A JP 4034283 A JP4034283 A JP 4034283A JP H046113 B2 JPH046113 B2 JP H046113B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- stripe
- semiconductor laser
- oscillation
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005253 cladding Methods 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 description 25
- 239000000835 fiber Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4034283A JPS59165487A (ja) | 1983-03-09 | 1983-03-09 | 半導体レ−ザアレイ素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4034283A JPS59165487A (ja) | 1983-03-09 | 1983-03-09 | 半導体レ−ザアレイ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59165487A JPS59165487A (ja) | 1984-09-18 |
JPH046113B2 true JPH046113B2 (nl) | 1992-02-04 |
Family
ID=12577954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4034283A Granted JPS59165487A (ja) | 1983-03-09 | 1983-03-09 | 半導体レ−ザアレイ素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59165487A (nl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61287289A (ja) * | 1985-06-14 | 1986-12-17 | Sharp Corp | 光メモリ用半導体レ−ザ装置 |
IT1237120B (it) * | 1989-11-03 | 1993-05-18 | Lonati Srl | Procedimento per l'esecuzione di disegni su calze con macchine circolari a doppio cilindro e dispositivo per la sua attuazione |
CA2091302A1 (en) * | 1992-03-11 | 1993-09-12 | Ichiro Yoshida | Semiconductor laser and process for fabricating the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139983A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Buried double heterojunction laser element |
-
1983
- 1983-03-09 JP JP4034283A patent/JPS59165487A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139983A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Buried double heterojunction laser element |
Also Published As
Publication number | Publication date |
---|---|
JPS59165487A (ja) | 1984-09-18 |
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