JPH046113B2 - - Google Patents

Info

Publication number: JPH046113B2
Authority: JP; Japan
Prior art keywords: layer; stripe; semiconductor laser; oscillation; groove
Prior art date: 1983-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP58040342A

Other languages

English (en)

Japanese (ja)

Other versions

JPS59165487A (ja

Inventor

Saburo Yamamoto

Hiroshi Hayashi

Shinji Kaneiwa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-03-09

Filing date

1983-03-09

Publication date

1992-02-04

1983-03-09 Application filed by Sharp Corp filed Critical Sharp Corp

1983-03-09 Priority to JP4034283A priority Critical patent/JPS59165487A/ja

1984-09-18 Publication of JPS59165487A publication Critical patent/JPS59165487A/ja

1992-02-04 Publication of JPH046113B2 publication Critical patent/JPH046113B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 21
239000013078 crystal Substances 0.000 claims description 12
238000005253 cladding Methods 0.000 claims description 11
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
239000000758 substrate Substances 0.000 claims description 9
230000000903 blocking effect Effects 0.000 claims description 6
238000004519 manufacturing process Methods 0.000 claims description 5
239000007791 liquid phase Substances 0.000 claims description 4
238000000034 method Methods 0.000 claims description 4
238000000926 separation method Methods 0.000 claims description 4
230000010355 oscillation Effects 0.000 description 25
239000000835 fiber Substances 0.000 description 3
239000013307 optical fiber Substances 0.000 description 2
150000001875 compounds Chemical class 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000000155 melt Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000004781 supercooling Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Semiconductor Lasers (AREA)

JP4034283A 1983-03-09 1983-03-09 半導体レ−ザアレイ素子 Granted JPS59165487A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP4034283A JPS59165487A (ja)	1983-03-09	1983-03-09	半導体レ−ザアレイ素子

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4034283A JPS59165487A (ja)	1983-03-09	1983-03-09	半導体レ−ザアレイ素子

Publications (2)

Publication Number	Publication Date
JPS59165487A JPS59165487A (ja)	1984-09-18
JPH046113B2 true JPH046113B2 (nl)	1992-02-04

Family

ID=12577954

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4034283A Granted JPS59165487A (ja)	1983-03-09	1983-03-09	半導体レ−ザアレイ素子

Country Status (1)

Country	Link
JP (1)	JPS59165487A (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61287289A (ja) *	1985-06-14	1986-12-17	Sharp Corp	光メモリ用半導体レ−ザ装置
IT1237120B (it) *	1989-11-03	1993-05-18	Lonati Srl	Procedimento per l'esecuzione di disegni su calze con macchine circolari a doppio cilindro e dispositivo per la sua attuazione
CA2091302A1 (en) *	1992-03-11	1993-09-12	Ichiro Yoshida	Semiconductor laser and process for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57139983A (en) *	1981-02-24	1982-08-30	Nec Corp	Buried double heterojunction laser element

1983
- 1983-03-09 JP JP4034283A patent/JPS59165487A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57139983A (en) *	1981-02-24	1982-08-30	Nec Corp	Buried double heterojunction laser element

Also Published As

Publication number	Publication date
JPS59165487A (ja)	1984-09-18

Publication	Publication Date	Title
JPS6215875A (ja)	1987-01-24	半導体装置およびその製造方法
JP2000312054A (ja)	2000-11-07	半導体素子の製造方法、及び半導体素子
JP2558744B2 (ja)	1996-11-27	半導体レーザ素子及びその製造方法
JPH0653619A (ja)	1994-02-25	化合物半導体装置及びその製造方法
JP3510305B2 (ja)	2004-03-29	半導体レーザの製造方法，及び半導体レーザ
JPH0556036B2 (nl)	1993-08-18
JPH11220212A (ja)	1999-08-10	光素子、光素子の駆動方法及び半導体レーザ素子
JPH046113B2 (nl)	1992-02-04
JPH0248151B2 (nl)	1990-10-24
JPH04364084A (ja)	1992-12-16	波長多重レーザ
US6404790B1 (en)	2002-06-11	Semiconductor laser and multi-semiconductor laser
JP2852663B2 (ja)	1999-02-03	半導体レーザ装置およびその製造方法
JP2542570B2 (ja)	1996-10-09	光集積素子の製造方法
JP2940158B2 (ja)	1999-08-25	半導体レーザ装置
JPH06283803A (ja)	1994-10-07	半導体発光装置
JPH1117269A (ja)	1999-01-22	半導体レーザ装置及びその製造方法
JPS6242592A (ja)	1987-02-24	半導体レ−ザアレイ装置およびその製造方法
JPH07312462A (ja)	1995-11-28	面発光レーザダイオードの製造方法，及び面発光レーザダイオード
JP2973215B2 (ja)	1999-11-08	半導体レーザ装置
JPH0410705Y2 (nl)	1992-03-17
JPH0437598B2 (nl)	1992-06-19
KR100259007B1 (ko)	2000-06-15	반도체 레이저 다이오드의 제조방법
JPH07235725A (ja)	1995-09-05	半導体レーザ素子およびその製造方法
JP4024319B2 (ja)	2007-12-19	半導体発光装置
JPH084181B2 (ja)	1996-01-17	半導体レーザの製造方法