JPH0457090B2 - - Google Patents
Info
- Publication number
- JPH0457090B2 JPH0457090B2 JP23639183A JP23639183A JPH0457090B2 JP H0457090 B2 JPH0457090 B2 JP H0457090B2 JP 23639183 A JP23639183 A JP 23639183A JP 23639183 A JP23639183 A JP 23639183A JP H0457090 B2 JPH0457090 B2 JP H0457090B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- chamber
- gas
- high frequency
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 description 31
- 230000005684 electric field Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
［発明の技術分野］
本発明はプラズマ装置の制御方法に係り、特に
半導体ウエハの処理、加工時に用いるプラズマ装
置におけるインピーダンスのマツチングを容易に
するこの種制御方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a control method for a plasma apparatus, and more particularly to a control method of this type that facilitates impedance matching in a plasma apparatus used during processing and processing of semiconductor wafers.
［発明の技術的背景］
従来から半導体ウエハの酸化膜エツチング又は
レジスト剥離はプラズマ装置が使用される。この
装置は、低真空状態のチヤンバー内に対向電極が
設けられ、このチヤンバー内にガスを供給すると
共に電極間に高周波電力を印加してチヤンバー内
のガスを遊離して活性化し、半導体ウエハをエツ
チング又はレジスト剥離するものである。[Technical Background of the Invention] Conventionally, plasma equipment has been used for etching oxide films or stripping resists from semiconductor wafers. In this device, a counter electrode is provided in a chamber in a low vacuum state, and gas is supplied into the chamber and high frequency power is applied between the electrodes to liberate and activate the gas in the chamber, thereby etching a semiconductor wafer. Or the resist is removed.
チヤンバーに高周波電界及びガスを加える場
合、チヤンバー内に10-2〜10-3Torr程度の真空
状態にした後、処理条件値の高周波電力およびガ
ス流量が一度に供給される。そして、チヤンバー
に電界をかけるときは、負荷に対して無効な反射
電力が最小となるよう反射電力を遂時追従しなが
らインピーダンス整合回路においてインピーダン
スを調整することにより安定かつ有効に高周波電
界が供給される。チヤンバーに電界がかけられる
と、電極間で放電が起こり、チヤンバー内のガス
は遊離して活性ガスとなるが、電極間の高周波イ
ンピーダンスは放電開始前と開始後ではその差が
極めて大きい。そこで、一般的には、放電開始す
るまでは、その状態における電極間のインピーダ
ンスに対してインピーダンス整合回路を調整して
チヤンバーに有効な電力（反射電力を最小）を供
給させて放電を行わせる。放電が開始すると、放
電状態の電極間のインピーダンスに対して再びイ
ンピーダンス整合回路が調整されて反射電力を最
小とするという方法が一般的である。 When applying a high frequency electric field and gas to the chamber, a vacuum state of about 10 -2 to 10 -3 Torr is created in the chamber, and then the high frequency power and gas flow rate corresponding to the processing condition values are supplied at once. When applying an electric field to the chamber, a high-frequency electric field is stably and effectively supplied by adjusting the impedance in the impedance matching circuit while tracking the reflected power in order to minimize the reflected power that is ineffective against the load. Ru. When an electric field is applied to the chamber, a discharge occurs between the electrodes, and the gas within the chamber is liberated and becomes an active gas, but the difference in high-frequency impedance between the electrodes is extremely large before and after the start of the discharge. Therefore, generally, until the discharge starts, an impedance matching circuit is adjusted to the impedance between the electrodes in that state to supply effective power (minimum reflected power) to the chamber to cause the discharge to occur. When the discharge starts, the common method is to again adjust the impedance matching circuit to the impedance between the electrodes in the discharge state to minimize the reflected power.
［背景技術の問題点］
しかしながら、上記方法によると、電極間の放
電開始前と開始後のインピーダンスの差が大きい
ため、インピーダンス整合回路の調整範囲を広く
するように設計する必要があり、また装置を作動
する毎に、人的に或は自動的に調整を行わなけれ
ばならず、装置を自動運転とする場合はインピー
ダンス整合回路の自動調整を制御する特別な機構
を必要とし高価にならざるを得ないという難点が
ある。[Problems in the background art] However, according to the above method, since there is a large difference in impedance between the electrodes before and after the start of discharge, it is necessary to design the impedance matching circuit to have a wide adjustment range, and the device Adjustments must be made manually or automatically each time the impedance matching circuit is operated, and if the device is to operate automatically, a special mechanism is required to control automatic adjustment of the impedance matching circuit, which is expensive. The problem is that you can't get it.
［発明の目的］
本発明は上記従来の難点に鑑みなされたもの
で、電極間の高周波インピーダンスはチヤンバー
内のガス圧により変化する事実と、電極間の放電
の容易さは電界の強さと所定ガス圧との関係で容
易にすることができるという事実に着目して、予
め処理時における整合インピーダンスを設定して
おき、処理時における高周波電力およびガス流量
の目的値に達する前にチヤンバー内のガス圧およ
び高周波電力を段階的に上昇させて放電し易い状
態にし、放電した後に高周波電力およびガス流量
を目的値とすることにより作業性を向上させるプ
ラズマ装置の制御方法を提供せんとするものであ
る。[Object of the Invention] The present invention has been made in view of the above-mentioned conventional difficulties, and it is based on the fact that the high frequency impedance between the electrodes changes depending on the gas pressure in the chamber, and the ease of discharge between the electrodes depends on the strength of the electric field and the specified gas pressure. Focusing on the fact that the matching impedance during processing can be easily achieved in relation to the pressure, the matching impedance during processing is set in advance, and the gas pressure in the chamber is adjusted before the target values of high frequency power and gas flow rate during processing are reached. Another object of the present invention is to provide a plasma device control method that improves workability by increasing the high frequency power in stages to make it easier to discharge, and after discharging, setting the high frequency power and gas flow rate to target values.
［発明の概要］
上記目的を達成するために本発明によれば、供
給されるガスの所定圧力の下でチヤンバー内で対
向する電極間に所定値の高周波電力を印加して放
電させ、該チヤンバー内のガスを遊離させて試料
を処理するプラズマ装置を制御するにあたり、前
記試料の処理時における高周波電力値およびガス
流量値の下で該電力印加時の整合インピーダンス
を予め設定し、前記プラズマ装置の作動開始時か
ら該高周波電力と該ガス流量におけるガス圧とを
処理時の値まで段階的に変化させるプラズマ装置
の制御方法を構成する。[Summary of the Invention] In order to achieve the above object, according to the present invention, a predetermined value of high-frequency power is applied between opposing electrodes in a chamber under a predetermined pressure of supplied gas to cause a discharge, and the chamber is discharged. When controlling a plasma device that processes a sample by liberating gas in the sample, the matching impedance at the time of power application is set in advance under the high frequency power value and gas flow rate value during the sample processing, and the matching impedance of the plasma device is set in advance. A control method for a plasma apparatus is configured in which the high frequency power and the gas pressure at the gas flow rate are changed stepwise from the start of operation to the values at the time of processing.
［発明の実施例］
以下、本発明の好ましい実施例を図面により説
明する。[Embodiments of the Invention] Preferred embodiments of the present invention will be described below with reference to the drawings.
本発明の制御方法におけるプラズマ装置の原理
図を第１図に示す。第１図において、高周波電源
装置１から進行波及び反射波の電力指示計２およ
びインピーダンス整合回路３を介してチヤンバー
４内の電極５の−極へ接続され、他の−極はアー
スされる。チヤンバー４にはガス供給口６が設け
られ、ガス流量計７で監視される。また、排気口
８が設けられ真空ポンプ（図示せず）に接続され
ておりチヤンバー４内の真空度が真空計９によつ
て示される。このような原理において本実施例で
は供給ガスをO2（酸素）とし、また高周波電源装
置１は周波数13.56MHzの高周波高出力電力発生
装置を用いる。 FIG. 1 shows a diagram of the principle of a plasma apparatus in the control method of the present invention. In FIG. 1, a high frequency power supply 1 is connected to the negative pole of an electrode 5 in a chamber 4 via a power indicator 2 for traveling waves and reflected waves and an impedance matching circuit 3, and the other negative pole is grounded. A gas supply port 6 is provided in the chamber 4 and monitored by a gas flow meter 7. Further, an exhaust port 8 is provided and connected to a vacuum pump (not shown), and the degree of vacuum within the chamber 4 is indicated by a vacuum gauge 9. Based on this principle, in this embodiment, the supplied gas is O 2 (oxygen), and the high frequency power supply device 1 uses a high frequency high output power generation device with a frequency of 13.56 MHz.
このような構成によるプラズマ装置の制御方法
を第２図をも含めて説明する。先ず、装置運転前
に、目的とする処理条件値、即ち高周波電力値
と、O2ガス流量値における整合インピーダンス
をインピーダンス整合回路の調整素子１０，１１
により予め設定する。そして運転が開始されると
（第２図Ａ）、真空ポンプによりチヤンバー４内を
真空度10-2〜10-3Torrになつたところで比較的
低い高周波電力と、約0.5Torr程度までのガス圧
とするO2ガス流量が印加される（第２図曲線２
０，２１）。因に、この条件において放電が開始
する場合もある。 A method of controlling a plasma apparatus having such a configuration will be explained with reference to FIG. 2. First, before operating the apparatus, the matching impedance at the target processing condition values, that is, the high frequency power value and the O 2 gas flow rate value, is determined by adjusting the adjustment elements 10 and 11 of the impedance matching circuit.
Set in advance by When the operation starts (Fig. 2A), the vacuum pump reaches a vacuum level of 10 -2 to 10 -3 Torr in the chamber 4, and then a relatively low high-frequency power and a gas pressure of about 0.5 Torr are applied. An O 2 gas flow rate of (Fig. 2 curve 2) is applied.
0,21). Incidentally, discharge may start under these conditions.
次に、高周波電力をステツプ的に上昇させてゆ
くが、この時反射波電力値（第２図曲線２２）は
高周波電源装置からみたインピーダンスがマツチ
ングしていないため、印加電力に比例して大きく
なる。ガス圧は0.1〜0.5Torrレベルで推移し、
（第２図Ｂ）、やがて電極５間で放電が開始する
と、この時点からインピーダンスはマツチングの
とれる方向に変化する（第２図Ｃ）。これは、高
周波電力の電界の強さとチヤンバー４内のガス圧
との関係における放電の容易さを示している。 Next, the high frequency power is increased stepwise, but at this time the reflected wave power value (curve 22 in Figure 2) increases in proportion to the applied power because the impedance seen from the high frequency power supply is not matched. . Gas pressure remains at 0.1-0.5Torr level,
(FIG. 2B), and eventually a discharge starts between the electrodes 5, and from this point on, the impedance changes in the direction of matching (FIG. 2C). This indicates the ease of discharge in relation to the strength of the electric field of high frequency power and the gas pressure within the chamber 4.
そして放電が開始した後、高周波電力とO2ガ
ス流量を処理条件値まで上昇させるものである。
この時本装置は、予め設定した整合インピーダン
スによりマツチング状態に落ち着き、最初の整合
インピーダンスの調整だけで最終目的のマツチン
グを行うことができる。そこで、チヤンバー４内
のガスが遊離されて半導体ウエハの処理を行うも
のである。 After the discharge starts, the high frequency power and O 2 gas flow rate are increased to the processing condition values.
At this time, the present device settles into a matching state using the matching impedance set in advance, and the final target matching can be performed only by adjusting the initial matching impedance. Therefore, the gas in the chamber 4 is released to process the semiconductor wafer.
［発明の効果］
以上の実施例からも明らかなように本発明によ
れば、予め処理時における整合インピーダンスを
設定しておき、処理時における高周波電力および
ガス流量の目的値に達する前にチヤンバー内のガ
ス圧および高周波電力を段階的に上昇させて放電
し易い状態にし、放電した後に高周波電力および
ガス流量を目的値とすることにより、本装置のイ
ンピーダンス整合回路の構成およびインピーダン
スマツチングの制御方法を容易とし、また省力化
により作業性を向上させることができる。[Effects of the Invention] As is clear from the above embodiments, according to the present invention, the matching impedance during processing is set in advance, and the matching impedance is set in advance in the chamber before the high frequency power and gas flow rate during processing reach the target values. The configuration of the impedance matching circuit of this device and the control method for impedance matching are achieved by increasing the gas pressure and high-frequency power in stages to make it easy to discharge, and after discharging, setting the high-frequency power and gas flow rate to target values. This makes it easier to operate and also improves work efficiency by saving labor.
第１図は本発明におけるプラズマ装置の原理
図、第２図は本発明による高周波電力値とガス流
量値の制御推移を示したグラフである。
１……高周波電源装置、３……インピーダンス
整合回路、４……チヤンバー、５……電極、２０
……高周波電力の推移曲線、２１……ガス流量の
推移曲線。
FIG. 1 is a diagram showing the principle of the plasma apparatus according to the present invention, and FIG. 2 is a graph showing the control transition of the high frequency power value and the gas flow rate value according to the present invention. DESCRIPTION OF SYMBOLS 1... High frequency power supply device, 3... Impedance matching circuit, 4... Chamber, 5... Electrode, 20
...Transition curve of high frequency power, 21... Transition curve of gas flow rate.
Claims (1)
内で対向する電極間に所定値の高周波電力を印加
して放電させ、該チヤンバー内のガスを遊離させ
て試料を処理するプラズマ装置を制御するにあた
り、前記試料の処理時における高周波電力値およ
びガス流量値の下で該電力印加時のインピーダン
ス整合を予め取つておき、前記プラズマ装置の作
動開始時から該高周波電力と該ガス流量における
ガス圧とを処理時の値まで段階的に変化させるこ
とを特徴とするプラスマ装置の制御方法。1. In controlling a plasma device that processes a sample by applying a predetermined value of high-frequency power between opposing electrodes in a chamber under a predetermined pressure of supplied gas to cause discharge and liberate the gas in the chamber. , impedance matching at the time of power application is established in advance under the high frequency power value and gas flow rate value during processing of the sample, and the high frequency power and gas pressure at the gas flow rate are adjusted from the start of operation of the plasma apparatus. A method for controlling a plasma device, characterized by changing the value in stages up to the value at the time of processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23639183A JPS60128620A (en) | 1983-12-16 | 1983-12-16 | Method for control of plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23639183A JPS60128620A (en) | 1983-12-16 | 1983-12-16 | Method for control of plasma device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60128620A JPS60128620A (en) | 1985-07-09 |
| JPH0457090B2 true JPH0457090B2 (en) | 1992-09-10 |
Family
ID=17000071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23639183A Granted JPS60128620A (en) | 1983-12-16 | 1983-12-16 | Method for control of plasma device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60128620A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373524A (en) * | 1986-09-16 | 1988-04-04 | Matsushita Electronics Corp | Plasma processing |
| JP5141519B2 (en) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | Plasma processing apparatus and method of operating plasma processing apparatus |
-
1983
- 1983-12-16 JP JP23639183A patent/JPS60128620A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60128620A (en) | 1985-07-09 |
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