JPH0456221A - Spin-coating method and spin-coating device - Google Patents
Spin-coating method and spin-coating deviceInfo
- Publication number
- JPH0456221A JPH0456221A JP16715590A JP16715590A JPH0456221A JP H0456221 A JPH0456221 A JP H0456221A JP 16715590 A JP16715590 A JP 16715590A JP 16715590 A JP16715590 A JP 16715590A JP H0456221 A JPH0456221 A JP H0456221A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- silicon substrate
- semiconductor substrate
- sog
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004528 spin coating Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 50
- 229910052710 silicon Inorganic materials 0.000 abstract description 50
- 239000010703 silicon Substances 0.000 abstract description 50
- 239000002904 solvent Substances 0.000 abstract description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 4
- 239000012298 atmosphere Substances 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の製造に用いる回転塗布方法およ
び回転塗布装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a spin coating method and a spin coating apparatus used for manufacturing semiconductor devices.
従来の技術
近年、２層以上の配線を有する半導体装置か多くなって
きているが、第１層の配線の段差を平坦化するためにＳ
ＯＧ膜が使用される。ＳＯＧとは、Ｓ ｐｉｎ−Ｏｎ−
Ｇ １ａｓｓの略称で、シリコン化合物を有機溶剤に溶
解した溶液またはこの溶液を塗布焼成することにより形
成される酸化シリコン膜の総称である。以下に説明する
従来例および本発明の実施例においては、シリコン化合
物を溶解した液をＳＯＧ液、これを塗布した膜をＳＯＧ
膜と称する。2. Description of the Related Art In recent years, more and more semiconductor devices have two or more layers of wiring.
OG membrane is used. What is SOG?
G1ass is an abbreviation for a silicon oxide film formed by a solution prepared by dissolving a silicon compound in an organic solvent or by applying and baking this solution. In the conventional example and the embodiment of the present invention described below, a liquid in which a silicon compound is dissolved is an SOG liquid, and a film coated with this is an SOG liquid.
It is called a membrane.
以下に従来の回転塗布方法および回転塗布装置について
説明する。A conventional spin coating method and a conventional spin coating device will be explained below.
第４図（ａ）〜（ｄｌは従来の回転塗布方法を説明する
ための工程断面図であり、シリコン基板上に形成された
アルミニウム系金属薄膜またはシリサイド等からなる配
線の段差を平坦化するためのＳＯＧ液の回転塗布方法の
例を示している。第４図＋ａｌはシリコン基板１上にト
ランジスタ等の素子（図では省略した）を形成した後、
層間絶縁膜として常圧ＣＶＤ法等により第一のシリコン
酸化膜２を形成し、その上に１μｍ厚の第一のアルミニ
ウム配線３を形成したものである。第４図（ｂｌは第一
のアルミニウム配線３の上にプラズマＣＶＤ法により第
二のシリコン酸化膜４を４０００人の厚さに形成したも
のである。このシリコン基板１上にＳＯＧＯｓＯ４成す
るのであるが、まずシリコン基板１を毎分２０回転で回
転させなからＳＯＧ液を５秒間で４ ｃｃシリコン基板
１の中心に滴下し、その後シリコン基板１を毎分５００
０回転で８秒間回転させてＳＯＧ液を全面に広げて溶剤
を蒸発させた後、窒素雰囲気中で４７０℃−２０分の熱
処理を行う。この状態を第４図（Ｃ１に示したが、シリ
コン基板１の表面の凹部かＳＯＧＯｓＯ４められている
。このＳＯＧＯｓＯ４にプラズマＣＶＤ法によって第三
のシリコン酸化膜４ａを３０００人堆積した状態を第４
図（ｄｉに示した。このようにしてＳＯＧＯｓＯ４成し
てアルミニウム配線３の段差ヲ平坦化し、第二のアルミ
ニウム配線（図では省略した）の段切れや配線抵抗の増
大を抑える。FIGS. 4(a) to (dl) are process cross-sectional views for explaining the conventional spin coating method, which is used to flatten the steps of wiring made of aluminum-based metal thin film or silicide formed on a silicon substrate. An example of the spin coating method of the SOG liquid is shown in FIG.
A first silicon oxide film 2 is formed as an interlayer insulating film by atmospheric pressure CVD or the like, and a first aluminum wiring 3 having a thickness of 1 μm is formed thereon. FIG. 4 (bl) shows a second silicon oxide film 4 formed to a thickness of 4000 nm on the first aluminum wiring 3 by the plasma CVD method.SOGOsO4 is formed on this silicon substrate 1. However, first, the silicon substrate 1 is rotated at 20 revolutions per minute, and then 4 cc of SOG liquid is dropped onto the center of the silicon substrate 1 in 5 seconds, and then the silicon substrate 1 is rotated at 50 revolutions per minute.
After rotating at 0 rotation for 8 seconds to spread the SOG liquid over the entire surface and evaporate the solvent, heat treatment is performed at 470° C. for 20 minutes in a nitrogen atmosphere. This state is shown in FIG. 4 (C1), where SOGOsO4 is deposited in the recesses on the surface of silicon substrate 1. The state in which 3,000 third silicon oxide films 4a are deposited on this SOGOsO4 by plasma CVD is shown in Figure 4.
In this way, SOGOsO4 is formed to flatten the step of the aluminum wiring 3, thereby suppressing the breakage of the second aluminum wiring (not shown in the figure) and the increase in wiring resistance.
第５図は従来の回転塗布装置を示す要部断面図である。FIG. 5 is a sectional view of a main part of a conventional spin coating device.
シリコン基板１は真空チャック６に吸着されており、こ
の真空チャック６はモーター７の回転軸８に連結されて
いる。ＳＯＧ液はＳＯＧ液導入管９によりシリコン基板
１上に導かれ、ソレノイドバルブ１０の開閉により一定
量が滴下されるようになっている。The silicon substrate 1 is attracted to a vacuum chuck 6, and the vacuum chuck 6 is connected to a rotating shaft 8 of a motor 7. The SOG liquid is introduced onto the silicon substrate 1 by an SOG liquid introduction pipe 9, and a fixed amount is dripped by opening and closing a solenoid valve 10.
発明が解決しようとする課題
しかしながら上記従来の構成では、シリコン基板内での
ＳＯＧ膜にばらつきが多く、部分的に平坦度の悪い場所
が生し、アルミニウム配線の段切れや配線抵抗の増大が
発生するという課題を有していた。Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, there are many variations in the SOG film within the silicon substrate, resulting in areas with poor flatness, leading to disconnections in the aluminum wiring and an increase in wiring resistance. We had the challenge of doing so.
またＳＯＧ液はシリコン基板の中心部に滴下されると時
間とともに溶媒であるエチルアルコールが蒸発し、粘度
が高くなりながらシリコン基板の回転によって中心部か
ら周辺部へと広がって行く。したがってＳＯＧ液は粘度
が高くならない状態でシリコン基板の回転による遠心力
で周辺部へ流れて行くためにシリコン基板の中心部では
凹部に溜りにくく膜厚が薄くなる。一方シリコン基板の
周辺部ではＳＯＧ液の粘度が高いため凹部に溜りやすく
膜厚が厚くなる。Further, when the SOG liquid is dropped onto the center of the silicon substrate, the ethyl alcohol as a solvent evaporates over time, and the viscosity increases as the silicon substrate rotates and spreads from the center to the periphery. Therefore, the SOG liquid flows to the periphery due to the centrifugal force caused by the rotation of the silicon substrate without increasing its viscosity, so that it is less likely to accumulate in the recesses in the center of the silicon substrate, resulting in a thinner film. On the other hand, since the viscosity of the SOG liquid is high in the peripheral area of the silicon substrate, the SOG liquid tends to accumulate in the recesses, resulting in a thick film.
また回転数を下げてＳＯＧ液か周辺部に流れる速度を遅
くしてシリコン基板の中心部でのＳＯＧ液の粘度を高め
た場合、シリコン基板の中心部ではＳＯＧ液が凹部に溜
りやすくなり膜厚も厚くなるが、シリコン基板の周辺部
ではＳＯＧ液の粘度が高くなりすぎて塗布むらが発生す
る。ＳＯＧ液がシリコン基板の中心部から周辺部へ流れ
る速度はシリコン基板の回転数によっても制御できるが
、単位時間あたりのＳＯＧ液の粘度の上昇程度は分散さ
せた物質と溶媒固有のものである。In addition, if the viscosity of the SOG liquid at the center of the silicon substrate is increased by lowering the rotation speed to slow down the flow rate of the SOG liquid to the peripheral area, the SOG liquid will tend to accumulate in the recesses at the center of the silicon substrate, resulting in a thicker film. However, the viscosity of the SOG liquid becomes too high around the silicon substrate, causing uneven coating. The speed at which the SOG liquid flows from the center to the periphery of the silicon substrate can also be controlled by the rotational speed of the silicon substrate, but the degree of increase in the viscosity of the SOG liquid per unit time is unique to the dispersed substance and solvent.
第６図（ａｌ〜ｆｃｌは従来の塗布方法でシリコン基板
１上にＳＯＧ液５ａを塗布する過程を説明するためのシ
リコン基板の断面図である。第６図（ａｌはＳＯＧ液５
ａをシリコン基板１上に滴下したところである。第６図
ｔｂ＋はシリコン基板１を５０００回転で回転させ始め
たところでＳＯＧ液５ａの粘度が増大しながら周辺に広
がって行くところを示している。第６図（Ｃ１は回転を
終えたところで、ＳＯＧＯｓＯ４リコン基板１の中心部
で薄く、周辺部で厚くなっている。この段階でＳＯＧＯ
ｓＯ４厚はシリコン基板１の中心部で１５００人、周辺
部で１８００人である。FIG. 6 (al to fcl are cross-sectional views of a silicon substrate for explaining the process of applying SOG liquid 5a onto silicon substrate 1 using a conventional coating method.
A was dropped onto the silicon substrate 1. FIG. 6 tb+ shows that the viscosity of the SOG liquid 5a increases and spreads around the silicon substrate 1 when it starts to rotate at 5000 revolutions. Figure 6 (C1 is at the end of rotation and is thinner at the center of the SOGOsO4 silicon substrate 1 and thicker at the periphery.At this stage, the SOGO
The sO4 thickness is 1500 at the center of the silicon substrate 1 and 1800 at the periphery.
第７図（ａｌ、 （ｂｌに上記の方法でＳＯＧ液５ａを
回転塗布した後のシリコン基板１の中心部および周辺部
の断面図を示す。第７図ｆａ）はシリコン基板１の中心
部での断面図、第７図（ｂｌはシリコン基板１の周辺部
での断面図である。シリコン基板１の中心部では周辺部
に比べＳＯＧ液５ａが溜りにくく、中心部の凹部でのＳ
ＯＧＯｓＯ４厚は周辺部の凹部での膜厚の５０％しかな
い。FIG. 7(al) and (bl) show cross-sectional views of the center and peripheral portions of the silicon substrate 1 after spin-coating the SOG liquid 5a by the above method. FIG. FIG. 7 is a cross-sectional view of the peripheral part of the silicon substrate 1. The SOG liquid 5a is less likely to accumulate in the center of the silicon substrate 1 than in the peripheral part, and the SOG liquid 5a is
The OGOsO4 thickness is only 50% of the film thickness at the peripheral recess.
本発明は上記従来の課題を解決するもので、シリコン基
板上の凹部にＳＯＧ液が溜りゃすく、膜厚の均一性およ
び平坦化に優れたＳＯＧ膜を形成できる回転塗布方法お
よび回転塗布装置を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and provides a spin coating method and a spin coating device that can prevent SOG liquid from accumulating in the recesses on a silicon substrate and form an SOG film with excellent film thickness uniformity and flatness. The purpose is to provide.
課題を解決するための手段
この目的を達成するために本発明の回転塗布方法は、溶
液を陽圧下で半導体基板上へ滴下し、その直後に回転塗
布するものであり、また本発明の回転塗布装置は圧力容
器中に半導体基板を吸着して回転する真空チャックと、
半導体基板へ溶液を滴下する滴下装置を備えた構成を有
している。Means for Solving the Problems In order to achieve this object, the spin coating method of the present invention is such that a solution is dropped onto a semiconductor substrate under positive pressure and spin coating is carried out immediately after. The device includes a vacuum chuck that sucks and rotates a semiconductor substrate in a pressure vessel,
The structure includes a dropping device that drops a solution onto a semiconductor substrate.
作用
この構成によって圧力容器内の圧力制御ができ、溶液中
の溶媒の蒸発速度で決定される粘度を制御して半導体基
板上の凹部へ溶液が溜りやすくすることで、溶媒蒸発後
の膜厚の均一性を向上させることができる。Effect This configuration allows the pressure inside the pressure vessel to be controlled, and by controlling the viscosity determined by the evaporation rate of the solvent in the solution and making it easier for the solution to accumulate in the recesses on the semiconductor substrate, the film thickness after the solvent evaporates can be reduced. Uniformity can be improved.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図（ａ）、 ｆｂｌは本発明の一実施例における回
転塗布方法を説明するためのシリコン基板の断面図であ
る。シリコン基板１を窒素ガス雰囲気１．５〜１．８気
圧の加圧状態で毎分２０回転で回転させなから、エチル
アルコールを溶媒としたＳＯＧ液５ａを５秒間−４ｃｃ
たけシリコン基板１上の中心に滴下したものが第１図（
ａｌである。その後シリコン基板１を毎分２０００回転
で８秒間回転させ、ＳＯＧＯｓＯ４リコン基板１の全面
に形成したものが第１図ｆｂｌである。このときシリコ
ン基板１の中心部での膜厚は２１００〜２１５０人、シ
リコン基板１の周辺部では２０５０〜２１００人であっ
た。FIG. 1(a), fbl is a sectional view of a silicon substrate for explaining a spin coating method in an embodiment of the present invention. While the silicon substrate 1 is rotated at 20 revolutions per minute in a nitrogen gas atmosphere under pressure of 1.5 to 1.8 atm, -4 cc of SOG liquid 5a with ethyl alcohol as a solvent is applied for 5 seconds.
The droplet dropped onto the center of the bamboo silicon substrate 1 is shown in Figure 1 (
It is al. Thereafter, the silicon substrate 1 was rotated at 2,000 revolutions per minute for 8 seconds, and the silicon substrate 1 was formed on the entire surface of the SOGOsO4 silicon substrate 1, as shown in FIG. 1 fbl. At this time, the film thickness at the center of the silicon substrate 1 was 2,100 to 2,150, and at the periphery of the silicon substrate 1, it was 2,050 to 2,100.
以上のようにＳＯＧ液５ａを陽圧下で回転塗布すること
によりＳＯＧ液５ａの溶媒であるエチルアルコールの蒸
発を制御してその粘度を一定に保ちながら低速回転を行
い、ＳＯＧ液５ａのシリコン基板１の周辺部への流れ速
度を低下させ、従来常圧下での回転塗布方法ではＳＯＧ
液５ａが溜りにくかったシリコン基板１の中心部の凹部
も含め膜厚均一性に優れたＳＯＧＯｓＯ４成することか
できる。なおＳＯＧ溶液５ａを塗布後に回転数を下げな
がら徐々に圧力を下げることにより、発泡などによるＳ
ＯＧＯｓＯ４くれが防止できる。As described above, by spin coating the SOG liquid 5a under positive pressure, low speed rotation is performed while controlling the evaporation of ethyl alcohol, which is the solvent of the SOG liquid 5a, and keeping its viscosity constant. By reducing the flow speed to the peripheral area of SOG
It is possible to form SOGOsO4 with excellent film thickness uniformity even in the concave portion of the center of the silicon substrate 1 where the liquid 5a is difficult to accumulate. After applying the SOG solution 5a, gradually reduce the pressure while lowering the rotation speed to prevent SOG due to foaming, etc.
OGOsO4 can be prevented.
第２図は本発明の一実施例における回転塗布装置の構成
図である。第２図において、圧力容器１１はシリコン基
板の回転装置系（図面では省略した）を内部に備えてお
り、ＳＯＧ液の滴下はＳＯＧ液導入管９、ソレノイドバ
ルブ１０を通して行われる。FIG. 2 is a block diagram of a spin coating apparatus in an embodiment of the present invention. In FIG. 2, the pressure vessel 11 is equipped with a silicon substrate rotating device system (omitted in the drawing), and the SOG liquid is dropped through the SOG liquid introduction pipe 9 and the solenoid valve 10.
圧力容器１１内を１．５〜１．８気圧に加圧するために
、１５０ｋｇ／ａｔ／で充填された窒素ガスホンへ１２
のガスを減圧弁１３で５ ｋｇ／ａｄに減圧し、第一の
マスフローコントローラ１４によって流量コントロール
しながら圧力容器１１内に導入する。また圧力容器１１
内のガスは可変オリフィス１５、第二のマスフローコン
トローラ１６を通して外部へ排出される。圧力容器１１
内の圧力は圧力検出装置１７で検出されて電気信号とし
てマイクロコンピュータ１８に送られ、マイクロコンピ
ュータ１８は圧力容器１１内が一定圧力になるように第
一および第二のマスフローコントローラ１４．１６およ
び可変オリフィス１５を制御する。In order to pressurize the inside of the pressure vessel 11 to 1.5 to 1.8 atmospheres, the nitrogen gas phone 12 filled with 150 kg/at/
The pressure of the gas is reduced to 5 kg/ad by the pressure reducing valve 13, and the gas is introduced into the pressure vessel 11 while the flow rate is controlled by the first mass flow controller 14. Also, the pressure vessel 11
The gas inside is exhausted to the outside through the variable orifice 15 and the second mass flow controller 16. Pressure vessel 11
The pressure inside the pressure vessel 11 is detected by the pressure detection device 17 and sent as an electric signal to the microcomputer 18. The orifice 15 is controlled.
第３図は圧力容器の断面図である。圧力容器１１は下部
容器１９と上蓋２０の２つの部分に分かれていてＯリン
グ２１とクランプ２２で密閉される。下部容器１９には
内部を加圧するための不活性ガスを導入するためのガス
導入管２３および排気管２４が接続されている。また上
蓋２０にはＳＯＧ液導入管９が接続されており、ソレノ
イドバルブ１０の開閉によってＳＯＧ液を滴下する。FIG. 3 is a sectional view of the pressure vessel. The pressure vessel 11 is divided into two parts, a lower vessel 19 and an upper lid 20, which are sealed with an O-ring 21 and a clamp 22. A gas introduction pipe 23 and an exhaust pipe 24 are connected to the lower container 19 for introducing an inert gas for pressurizing the inside. Further, an SOG liquid introduction pipe 9 is connected to the upper lid 20, and the SOG liquid is dripped by opening and closing a solenoid valve 10.
シリコン基板１は真空チャック６に吸着され、その真空
チャック６は回転軸８を通してモーター７で回転する。The silicon substrate 1 is attracted to a vacuum chuck 6, and the vacuum chuck 6 is rotated by a motor 7 through a rotating shaft 8.
以上のように本実施例の回転塗布装置は密閉できる圧力
容器１１を有し、陽圧下でＳＯＧ液５ａの回転塗布が可
能であり、この装置を用いてＳＯＧ液５ａを陽圧下でシ
リコン基板１上に塗布することにより、シリコン基板１
上の凹部にＳＯＧ液５ａが溜りやすくなり、最終的に膜
厚均一性に優れたＳＯＧＯｓＯ４成できる。As described above, the spin coating apparatus of this embodiment has a pressure vessel 11 that can be sealed, and is capable of spin coating the SOG liquid 5a under positive pressure. By coating on the silicon substrate 1
The SOG liquid 5a easily accumulates in the upper recess, and finally SOGOsO4 with excellent film thickness uniformity can be formed.
なお、本実施例において圧力容器１１内を窒素ガスで加
圧したが、アルゴン等の不活性ガスを用いてもよいこと
はいうまでもない。Although the inside of the pressure vessel 11 is pressurized with nitrogen gas in this embodiment, it goes without saying that an inert gas such as argon may also be used.
また本実施例においては、ＳＯＧ液５ａの回転塗布を例
として説明したか、ポリイミド系樹脂の塗布に応用して
も同様の効果が得られる。Further, in this embodiment, the spin coating of the SOG liquid 5a has been explained as an example, but the same effect can be obtained even if it is applied to the coating of polyimide resin.
発明の効果
以上のように本発明は、陽圧下で無機または有機の物質
を分散または溶解した溶液を半導体基板上に滴下し、そ
の半導体基板を回転して溶液を半導体基板全面に塗布す
ることにより、半導体基板上の凹部へ溶液が溜りやすく
、最終的に膜厚均一性に優れた塗布膜が得られる優れた
回転塗布方法および回転塗布装置を実現できるものであ
る。Effects of the Invention As described above, the present invention is capable of applying a solution containing an inorganic or organic substance dispersed or dissolved onto a semiconductor substrate under positive pressure, and rotating the semiconductor substrate to coat the entire surface of the semiconductor substrate with the solution. Accordingly, it is possible to realize an excellent spin coating method and spin coating apparatus in which the solution easily accumulates in the recesses on the semiconductor substrate, and a coating film with excellent film thickness uniformity can be obtained in the end.
第１図（ａｌ、 （ｂｌは本発明の一実施例における回
転塗布方法を適用するためのシリコン基板の断面図、第
２図は本発明の一実施例における回転塗布装置の概略断
面図、第３図は本発明の回転塗布装置の圧力容器の断面
図、第４図（ａｌ〜（ｄｌは従来の回転塗布方法を説明
するための工程断面図、第５図は従来の回転塗布装置を
示す要部断面図、第６図ｆａｔ〜ｆｃｌは従来の塗布方
法を適用するためのシリコン基板の断面図、第７図ｆａ
ｌ、 （ｂｌは従来の方法で回転塗布した後のシリコン
基板の中心部および周辺部の断面図である。
１・・・・・・シリコン基板（半導体基板）、５ａ・・
・・・・ＳＯＧ溶液（溶液）。
代理人の氏名 弁理士 粟野重孝 ほか１名第１図
１ ・シリコン基Ｍ（９９伯本幕不ｑ）ａ・ ＳＯ＠
渣（ダ寥珂★）
弔
図
弔
図
第
図
第
図Figure 1 (al, (bl) is a sectional view of a silicon substrate to which a spin coating method in an embodiment of the present invention is applied; Figure 2 is a schematic sectional view of a spin coating apparatus in an embodiment of the present invention; 3 is a sectional view of the pressure vessel of the spin coating device of the present invention, FIG. A cross-sectional view of the main parts, FIG. 6 fat to fcl is a cross-sectional view of a silicon substrate to which the conventional coating method is applied, and FIG. 7 fa
l, (bl is a cross-sectional view of the center and peripheral parts of a silicon substrate after spin coating by a conventional method. 1...Silicon substrate (semiconductor substrate), 5a...
...SOG solution (solution). Name of agent: Patent attorney Shigetaka Awano and one other person Figure 1 ・Silicon Group M (1999 Honmakufuq) a・SO@
渣（Da寥珂★） Funeral map
Claims (3)
した溶液を半導体基板上に滴下し、前記半導体基板を回
転して溶液を半導体基板全面に塗布する回転塗布方法。(1) A spin coating method in which a solution in which an inorganic or organic substance is dispersed or dissolved is dropped onto a semiconductor substrate under positive pressure, and the semiconductor substrate is rotated to coat the entire surface of the semiconductor substrate with the solution.
ながら陽圧から常圧へ戻す請求項１記載の回転塗布方法
。(2) The spin coating method according to claim 1, wherein after coating the solution on the semiconductor substrate, the pressure is returned from positive pressure to normal pressure while lowering the rotation speed.
び溶液供給手段を取り付けた圧力容器中に、半導体基板
を吸着回転するための吸着回転手段と、前記溶液供給手
段から供給される無機または有機の物質を分散または溶
解した溶液を前記半導体基板上へ滴下するための溶液滴
下手段とを備え、かつ前記各手段を制御する制御手段を
備えた回転塗布装置。(3) In a pressure vessel equipped with a pressure detection means, a gas introduction means, a gas exhaust means, and a solution supply means, an adsorption rotation means for adsorption and rotation of the semiconductor substrate, and an inorganic or organic solution supplied from the solution supply means. a solution dropping means for dropping a solution in which a substance is dispersed or dissolved onto the semiconductor substrate, and a control means for controlling each of the means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16715590A JPH0456221A (en) | 1990-06-25 | 1990-06-25 | Spin-coating method and spin-coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16715590A JPH0456221A (en) | 1990-06-25 | 1990-06-25 | Spin-coating method and spin-coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0456221A true JPH0456221A (en) | 1992-02-24 |
Family
ID=15844444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16715590A Pending JPH0456221A (en) | 1990-06-25 | 1990-06-25 | Spin-coating method and spin-coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0456221A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319847B1 (en) | 1997-03-31 | 2001-11-20 | Nec Corporation | Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique |
| JP2007123460A (en) * | 2005-10-27 | 2007-05-17 | Tokyo Electron Ltd | Method of depositing application film and its apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62176572A (en) * | 1986-01-31 | 1987-08-03 | Toshiba Corp | Apparatus for forming film |
| JPH03187217A (en) * | 1989-12-15 | 1991-08-15 | Rohm Co Ltd | Surface treatment device for wafer |
| JPH0444217A (en) * | 1990-06-07 | 1992-02-14 | Seiko Epson Corp | Manufacture of semiconductor device |
-
1990
- 1990-06-25 JP JP16715590A patent/JPH0456221A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62176572A (en) * | 1986-01-31 | 1987-08-03 | Toshiba Corp | Apparatus for forming film |
| JPH03187217A (en) * | 1989-12-15 | 1991-08-15 | Rohm Co Ltd | Surface treatment device for wafer |
| JPH0444217A (en) * | 1990-06-07 | 1992-02-14 | Seiko Epson Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319847B1 (en) | 1997-03-31 | 2001-11-20 | Nec Corporation | Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique |
| JP2007123460A (en) * | 2005-10-27 | 2007-05-17 | Tokyo Electron Ltd | Method of depositing application film and its apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1404136A (en) | Method of raising low-electric layer spreading capacity | |
| US6530340B2 (en) | Apparatus for manufacturing planar spin-on films | |
| US6946407B2 (en) | Method for pretreating a substrate prior to application of a polymeric coat | |
| US6317642B1 (en) | Apparatus and methods for uniform scan dispensing of spin-on materials | |
| JPH03190232A (en) | Manufacture of semiconductor device | |
| US20010029111A1 (en) | Solution flow-in for uniform deposition of spin-on films | |
| JPH0456221A (en) | Spin-coating method and spin-coating device | |
| JPH08181133A (en) | Dielectric material and manufacture of dielectric film | |
| US5918152A (en) | Gap filling method using high pressure | |
| JPH02119226A (en) | Spin coating of organic solution | |
| US6420278B1 (en) | Method for improving the dielectric constant of silicon-based semiconductor materials | |
| JPH01286435A (en) | Manufacture of semiconductor device and its equipment | |
| JPH0444213A (en) | Manufacture of semiconductor device | |
| JP3230891B2 (en) | Coating device | |
| JPS59141220A (en) | Application | |
| JP3321294B2 (en) | Method for manufacturing semiconductor device | |
| JPH0444214A (en) | Manufacture of semiconductor device | |
| JPH0555131A (en) | Method and device for resist coating | |
| JPS63164318A (en) | Spin-coating proces and device thereof | |
| JPH05259049A (en) | Spin coating on semiconductor substrate | |
| JPH0254518A (en) | Spin coater | |
| JP2000188266A (en) | Metal film-forming device and its film-forming method | |
| JPH02126970A (en) | Spin coating method | |
| JPH0444216A (en) | Manufacture of semiconductor device | |
| JPS62195121A (en) | Spin coater |