JPH0456176A - Compound semiconductor device between ii-vi families - Google Patents
Compound semiconductor device between ii-vi familiesInfo
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- JPH0456176A JPH0456176A JP2163747A JP16374790A JPH0456176A JP H0456176 A JPH0456176 A JP H0456176A JP 2163747 A JP2163747 A JP 2163747A JP 16374790 A JP16374790 A JP 16374790A JP H0456176 A JPH0456176 A JP H0456176A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 229910021474 group 7 element Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 37
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 8
- 239000002019 doping agent Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 67
- 239000012535 impurity Substances 0.000 description 10
- 239000000470 constituent Substances 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
７産業上の利用分野コ
本発明は、ＩＩ−ＶＩ族間化合物半導体装置に関し、特
に高効率な発光を容易に望めるダイオード楕遣：従来技
術〕
第６図および第７図は、…−■族間化合物であるセレン
化亜鉛（ＺｎＳｅ）を用いた青色発光ダイオードの断面
構造を示す。[Detailed Description of the Invention] 7. Fields of Industrial Application The present invention relates to a II-VI intergroup compound semiconductor device, and in particular to a diode ellipse that can easily achieve highly efficient light emission: prior art] Figs. 6 and 7 The figure shows a cross-sectional structure of a blue light emitting diode using zinc selenide (ZnSe), which is an intergroup compound.
第６図に示す発光ダイオードは、Ｚｎ５ｅ基板の代用と
してＺｎ５ｅと格子定数が比較的近いカリウムヒ素（Ｇ
ａＡｓ）を基板結晶１０１として用いている。この基板
結晶１０１の上に、ｎ形Ｚｎ５ｅの薄層１０２とｐ形Ｚ
ｎ５ｅの薄層１０３を積層し、ｐｎ接合を実現している
。The light emitting diode shown in Fig. 6 uses potassium arsenide (G
aAs) is used as the substrate crystal 101. On this substrate crystal 101, a thin layer 102 of n-type Zn5e and a thin layer 102 of p-type Zn5e are formed.
A pn junction is realized by laminating thin layers 103 of n5e.
第７図に示す発光ダイオードは、バルク状のＺｎ５ｅ結
晶から切り出したノンドー１のＺｎ５ｅ結晶をＺｎ中で
熱処理しあるいはｎ形不純物を拡散してｎ形化したｎ形
結晶層１１１の上にｐ形結晶層１１２を形成した構造を
有する。The light emitting diode shown in FIG. 7 has a p-type crystal layer 111 on which a non-doped Zn5e crystal cut out from a bulk Zn5e crystal is heat-treated in Zn or made into an n-type crystal by diffusing n-type impurities. It has a structure in which a crystal layer 112 is formed.
「発明か解決しようとする課題］
第６図において、基板層（ＧａＡｓ ）１０１とその上
の成長層（ＺｎＳｅ）１０２とでは構成元素の異なる結
晶を用いている。そのため、格子不整合による格子欠陥
か発生する。ＧａＡｓとＺｎ５ｅとは格子定数か比較的
近いか、このような格子不整合による格子欠陥の発生は
不可避である。"Problem to be solved by the invention" In FIG. 6, crystals with different constituent elements are used for the substrate layer (GaAs) 101 and the growth layer (ZnSe) 102 thereon.As a result, lattice defects due to lattice mismatch GaAs and Zn5e have relatively similar lattice constants, or the occurrence of lattice defects due to such lattice mismatch is inevitable.
また、基板層１０１から成長層１０２への構成元素の拡
散による変質がある。Further, there is deterioration due to diffusion of constituent elements from the substrate layer 101 to the growth layer 102.
さらに、基板層１０１を構成する基板結晶の禁制帯幅は
、発光層１０２の結晶の禁制帯幅より小さい、そのため
、発光した光のうち基板層側に向かう光は基板層１０１
に多く吸収される。結果として、高効率な発光タイオー
ドが得られない。Further, the forbidden band width of the substrate crystal constituting the substrate layer 101 is smaller than the forbidden band width of the crystal of the light emitting layer 102. Therefore, among the emitted light, the light directed toward the substrate layer side is
is absorbed in large quantities. As a result, a highly efficient light emitting diode cannot be obtained.
第７図の構造では、ｎ形結晶層１１１が拡散形である場
合、ｐ形結晶層１１２の形成時に、ｎ形結晶層１１１の
構成元素かｐ形結晶層１１２側へ逆拡散する。そのため
ｐ形結晶層１１２が高抵抗化し、高効率な発光ダイオー
ドか得られない。In the structure shown in FIG. 7, when the n-type crystal layer 111 is of the diffusion type, when the p-type crystal layer 112 is formed, the constituent elements of the n-type crystal layer 111 are back-diffused toward the p-type crystal layer 112 side. Therefore, the p-type crystal layer 112 has a high resistance, and a highly efficient light emitting diode cannot be obtained.
本発明の目的は、格子欠陥や各層の変質が極めて少なく
、高効率で発光を行うことのできるＵ−■膜間化合物半
導体装置を提供することである。An object of the present invention is to provide a U-2 intermembrane compound semiconductor device that has extremely few lattice defects and alterations in each layer and can emit light with high efficiency.
：課題を解決するための手段シ
本発明によれば、ｎ形ｎ −ＶＩ族間化合物半導体から
なる第１Ｎと、該第１層の■−■族間化合物と同一のＩ
Ｉ−ＶＩ族間化合物主成分とし、■族元素を添加しなｎ
形■−■膜間化合物半導体からなる第２層と、該第１層
のＩＩ−ＶＩ族間化合物と同一のＩＩ−ＶＩ族間化合物
を主成分とするｐ形ＩＩ−ＶＩ族間化合物半導体からな
る第３層とを有することを特徴とするＩＩ−ＶＩ族間化
合物半導体装置が提供される。According to the present invention, a first N made of an n-type n-VI intergroup compound semiconductor and an I which is the same as the ■-■ intergroup compound of the first layer.
Mainly composed of I-VI intergroup compounds, with no addition of group ■ elements.
A second layer consisting of a type ■-■ intermembrane compound semiconductor, and a p-type II-VI intergroup compound semiconductor whose main component is the same II-VI intergroup compound as the II-VI intergroup compound of the first layer. There is provided a II-VI intergroup compound semiconductor device characterized by having a third layer.
１作 用コ
第１層と第２層とは同一の■−■族間化合物を用いたｎ
形１ｌ−ＶＩ族間化合物半導体であるので、格子不整合
による格子欠陥の発生か極力抑えられる。同様にヘテロ
構造の場合と較べて、第１層から第２層への構成元素の
拡散による変質も極力抑えられる。1. The first layer and the second layer are formed using the same ■-■ intergroup compound.
Since it is a type 1l-VI intergroup compound semiconductor, the occurrence of lattice defects due to lattice mismatch can be suppressed to the utmost. Similarly, compared to the case of a heterostructure, deterioration due to diffusion of constituent elements from the first layer to the second layer is also suppressed to the utmost.
各層は同一のＩＩ−ＶＩ族間化合物を用いているので、
各層の禁制帯幅は同一である。そのため、基板層である
第１層における発光した光の吸収が抑えられ、高効率な
発光タイオードが得られる。Since each layer uses the same II-VI intergroup compound,
The forbidden band width of each layer is the same. Therefore, absorption of the emitted light in the first layer, which is the substrate layer, is suppressed, and a highly efficient light emitting diode can be obtained.
第２層は■族元素を添加した結晶を用いているので、こ
の上の第３層であるｐ形半導体層へのｎ形ドーパントの
拡散か減少する。したがって、ｐｎ界面における高抵抗
層の形成が防止できる。Since the second layer uses a crystal doped with group Ⅰ elements, the diffusion of n-type dopants into the p-type semiconductor layer, which is the third layer thereon, is reduced. Therefore, formation of a high resistance layer at the pn interface can be prevented.
３実施例］
本発明における具体的な実施例として、ｎ−ＶＩ族化合
物半導体であるＺｎ５ｅを例にとり、以下説明する。3 Examples] A specific example of the present invention will be described below by taking Zn5e, which is an n-VI group compound semiconductor, as an example.
第１図は、本発明に係るＩＩ−ＶＩ族間化合物半導体装
置である発光ダイオードの断面構造を示す。FIG. 1 shows a cross-sectional structure of a light emitting diode which is a II-VI intergroup compound semiconductor device according to the present invention.
■族元素を添加したｎ形Ｚｎ５ｅ層（第１層）１上に■
族元素を添加したｎ形Ｚｎ５ｅ層（第２層）２を形成し
、その後、Ｉａ族元素を添加したｐ形Ｚｎ５ｅ層（第３
層）３を形成している。■On the n-type Zn5e layer (first layer) 1 doped with group elements■
An n-type Zn5e layer (second layer) 2 doped with group elements is formed, and then a p-type Zn5e layer (third layer) doped with group Ia elements is formed.
Layer) 3 is formed.
第２層としてｎ形の低抵抗結晶を得るなめには、例えば
以下のようにする。溶媒としてＺｎを用い、この溶媒中
に適当量の不純物である■族元素を添加する。温度差を
付けた溶媒の高温側に原料結晶を置き、低温側に基板結
晶（第１層）−を置く、これにより、飽和溶解度の高い
高温／Ｆｌ（原料結晶部分）から飽和溶解度の低い低温
側（基板結晶部分）に向かって濃度勾配による溶質の流
れか生じ、溶けた結晶材料の拡散が起こる。そして、原
料結晶か基板上にエピタキシャル成長し、第２層が形成
される。In order to obtain an n-type low resistance crystal as the second layer, for example, the following procedure is performed. Zn is used as a solvent, and an appropriate amount of a group Ⅰ element as an impurity is added to this solvent. The raw material crystal is placed on the high-temperature side of the solvent with a temperature difference, and the substrate crystal (first layer) is placed on the low-temperature side.This allows the transition from the high temperature/Fl (raw material crystal part) with high saturated solubility to the low temperature with low saturated solubility. A flow of solute occurs toward the side (crystalline portion of the substrate) due to a concentration gradient, and diffusion of the melted crystalline material occurs. Then, the raw material crystal is epitaxially grown on the substrate to form a second layer.
第２図に、■族元素の代りに■族元素を用いて形成した
結晶の電気的特性を示す。第３図に、■族元素を用いて
形成した結晶の電気的特性を示す。FIG. 2 shows the electrical characteristics of a crystal formed using a group Ⅰ element instead of a group Ⅰ element. FIG. 3 shows the electrical characteristics of a crystal formed using a group Ⅰ element.
第２図から分かるように、■族元素（Ｇａ。As can be seen from Figure 2, group II elements (Ga.
Ｉｎ）を添加した結晶では、不純物の添加量が１０−２
ｍｏ１％以上で、キャリア密度が１０１７ｃ１１−３以
上となる。しかし、任意のキャリア密度を得ることは容
易ではない、第３図から分かるように、■族元素（Ｂｒ
、Ｉ）を添加した結晶では、不純物の添加量か１０−６
ｍｏ１％以上で、キャリア密度か１０１７ｃｎ−３とな
る。添加量は■族元素の場合、非常に少ない、添加量お
よび不純物の種類を適当に選択することにより、キャリ
ア密度を１０１８ｃｍ３近傍とすることら可能である。In the crystal doped with In), the amount of impurities added is 10-2
When the mo is 1% or more, the carrier density is 1017c11-3 or more. However, it is not easy to obtain an arbitrary carrier density, as can be seen from Figure 3.
, I), the amount of impurities added is 10-6
When the mo is 1% or more, the carrier density becomes 1017cn-3. In the case of group Ⅰ elements, the amount added is very small; by appropriately selecting the amount added and the type of impurity, it is possible to make the carrier density around 1018 cm3.
第４図に、■族元素（Ｇａ）を添加した結晶と■族元素
（１）を添加した結晶の深さ方向の不純物密度を示す、
これは、ランド−１基板上にエピタキシャル成長させた
結晶について測定した結果である。同図によれば、■族
元素であるＧａの基板側の不純物密度は、ｙＨ族元素で
ある■の基板側の不純物密度に比べて非常に高い。これ
は、■族元素であるＧａの基板側への拡散が非常に大き
いことを示している。また、■族元素である■の基板側
への拡散はＧａに比べて非常に低い、他の■族元素およ
び■族元素についても同機の傾向を示す。Figure 4 shows the impurity density in the depth direction of a crystal doped with a group II element (Ga) and a crystal doped with a group II element (1).
This is the result of measurement of a crystal epitaxially grown on the land-1 substrate. According to the figure, the impurity density of Ga, which is a group II element, on the substrate side is much higher than the impurity density of Ga, which is a yH group element, on the substrate side. This indicates that the diffusion of Ga, which is a group Ⅰ element, toward the substrate side is extremely large. Furthermore, the same tendency is also shown for other group Ⅰ elements and group Ⅰ elements, in which the diffusion of ①, which is a group ① element, to the substrate side is very low compared to Ga.
このように■族元素は熱的に不安定である６すなわち、
■族元素を不純物として添加したｎ形半導体層の上にｐ
形半導体層を積層するときには、ｎ形半導体層の■族元
素がｐ形半導体層側へ拡散してしまう、ｐ形半導体層に
おいては、拡散しなｎ形不純物かアクセプタを補償する
なめに、ｎρ界面近傍の２層が高抵抗ｊとする。そのな
め、効率の低下を招きデバイス上非常に問題となる。こ
れに対し、■族元素はこのようなことかない。In this way, group Ⅰ elements are thermally unstable6, that is,
■P-type semiconductor layer doped with group elements as impurities
When stacking type semiconductor layers, group Ⅰ elements in the n-type semiconductor layer diffuse toward the p-type semiconductor layer.In the p-type semiconductor layer, nρ It is assumed that the two layers near the interface have high resistance j. This leads to a drop in efficiency and poses a serious problem for devices. On the other hand, this is not the case with group II elements.
第５図は、■族元素のＡｇ、Ｌｉ、ＲｂあるいはＶ族元
素のＰをそれぞれ添加１．７’、、： Ｚ ｎ Ｓ ｅ
結晶のフォトルミネセンススペクトルを示す、横軸は発
光波長、縦軸は任意単位の発光強度を示す、なお、縦軸
のスゲールは図中表示の数値倍して読むものとする。サ
ンプルは５°Ｃ／ＣＩの温度勾配で、成長温度５５０℃
で成長した。これらの図から分るように、Ｉａ族元素で
あるＬｉ、Ｒｂを添加した場合は、ＤＡＰや束縛された
中性アクセプタに起因した１１ピークが観測される。Ｉ
ｂ族元素のＡｇを添加した時は、５５０ｎｍ付近にピー
クを持つディープ発光か観察される。したかって、Ｉｂ
族元素を添加した結晶をＰ形半導体層（第３層）として
も、色純度の優れた青色発光は離しい、また、Ｖ族とし
てｚｎＰ２を添加した場合は、束縛された中性ドナーに
起因した■２ピークか観察され浅いアクセプタの形成か
成されていない、したかって、ｐ型ドーパントとして働
き得ないと考えられる。Figure 5 shows the addition of Ag, Li, Rb, which is a group ■ element, or P, which is a group V element, at 1.7',...: Z n S e
The photoluminescence spectrum of the crystal is shown.The horizontal axis shows the emission wavelength, and the vertical axis shows the emission intensity in arbitrary units.The scale on the vertical axis is read by multiplying the numerical value shown in the figure. The sample was grown at a temperature gradient of 550°C with a temperature gradient of 5°C/CI.
I grew up in As can be seen from these figures, when Li and Rb, which are group Ia elements, are added, 11 peaks resulting from DAP and bound neutral acceptors are observed. I
When Ag, a group B element, is added, deep luminescence with a peak around 550 nm is observed. I want to, Ib
Even if a crystal doped with group elements is used as the P-type semiconductor layer (third layer), blue light emission with excellent color purity cannot be achieved.Also, when znP2 is added as a group V element, blue light emission due to bound neutral donors (2) Only two peaks were observed, and no shallow acceptor was formed.Therefore, it is thought that it cannot function as a p-type dopant.
以上説明したように、第２層としてＶＩ族元素を添加し
たｎ形■−■膜間化合物半導体を用いれば、第２層のキ
ャリア密度が１０１８ｃｌ−３近傍に至るような結晶層
までも形成することかでき、電気的な制御範囲も広がる
。As explained above, if an n-type ■-■ interlayer compound semiconductor doped with Group VI elements is used as the second layer, a crystalline layer with a carrier density of around 1018 cl-3 can be formed in the second layer. This also expands the electrical control range.
以上実施例に沿って本発明を説明したが、本発明はこれ
らに制限されるものではない。例えば、種々の変更、改
良、組合わせなどが可能なことは当業者に自明であろう
。Although the present invention has been described above along with examples, the present invention is not limited to these. For example, it will be obvious to those skilled in the art that various changes, improvements, combinations, etc. are possible.
ε発明の効果］
以上説明したように、本発明によれば、半導体装置を構
成する各層を同一物質の結晶（ＩＩ−ＶＩ族間化合物）
を用いて構成しているので、格子不整合による格子欠陥
の発生が抑えられる。まな、各層の変質も極めて少なく
なる。各層の禁制帯幅は同一となるので、発光した光の
うち基板側で反射してきた光もある程度吸収されずに半
導体装１前面から出てくる。したがって、発光効率が上
がる。[Effect of ε Invention] As explained above, according to the present invention, each layer constituting a semiconductor device is made of crystals of the same substance (II-VI intergroup compound).
Since the structure uses lattice defects, generation of lattice defects due to lattice mismatch can be suppressed. Moreover, the deterioration of each layer is also extremely reduced. Since the forbidden band width of each layer is the same, some of the emitted light reflected from the substrate side is not absorbed to some extent and exits from the front surface of the semiconductor device 1. Therefore, luminous efficiency increases.
ｐｎ接合面に対し第２層としてＶ′Ｊ族添加結晶を用い
ているので、第３層のｐ形半導体層へのｎ形ドーパント
の拡散か減少する。したかって、ｐｎ界面近傍において
高抵抗層の形成が防止できる６また、キャリア密度を１
０１８ｃｎ−３近傍まで広範囲に選択できる。したがっ
て、電気的制御範囲が広がり高輝度化および高効率化を
図ることができる。Since the V'J group doped crystal is used as the second layer for the p-n junction surface, the diffusion of n-type dopant into the third p-type semiconductor layer is reduced. Therefore, the formation of a high resistance layer near the pn interface can be prevented6.
Can be selected from a wide range up to around 018cn-3. Therefore, the electrical control range is expanded, and higher brightness and efficiency can be achieved.
第１図は、本発明の半導体装置（発光ダイオード）の断
面図、
第２図は、■族元素を添加した結晶の電気的特性を示す
グラフ、
第３図は、■族元素を添加した結晶の電気的特性を示す
グラフ、
第４図は、■族元素を添加した結晶と■族元素を添加し
た結晶の深さ方向の不純物密度を示すグラフ、
第５図は、Ｉ族元素のＡｇ、Ｌｉ、ＲｂあるいはＶ族元
素のＰをそれぞれ添加したＺｎ５ｅ結晶のフォトルミネ
セントスペクトルを示すグラフ、第６図および第７図は
、Ｚｎ５ｅを用いた従来の発光タイオードの断面図であ
る。
図において、
■族元素を添加した
ｎ形Ｚｎ５ｅ層（第１層）
Ｖｍ族元素を添加した
ｎ形Ｚｎ５ｅ層（第２層）
Ｉａ族元素を添加した
ｐ形Ｚｎ５ｅ層（第３層）
特許出願人 スタンレー電気株式会社代 理 人 弁
理士 高橋敬四部
第４図
添加量（ｍｏ１９．。）
第２図
添加量（ｍ０１九）
第３図
第５図Fig. 1 is a cross-sectional view of the semiconductor device (light emitting diode) of the present invention, Fig. 2 is a graph showing the electrical characteristics of a crystal doped with a group II element, and Fig. 3 is a crystal doped with a group II element. 4 is a graph showing the impurity density in the depth direction of a crystal doped with a group I element and a crystal doped with a group 2 element. FIG. Graphs showing photoluminescent spectra of Zn5e crystals doped with Li, Rb, or P, a group V element, respectively, and FIGS. 6 and 7 are cross-sectional views of conventional light emitting diodes using Zn5e. In the figure, an n-type Zn5e layer doped with group Ⅰ elements (first layer), an n-type Zn5e layer doped with group Vm elements (second layer), a p-type Zn5e layer doped with group Ia elements (third layer), and a patent application. Person Stanley Electric Co., Ltd. Representative Person Patent Attorney Takahashi Keishibe Figure 4 Addition amount (mo19..) Figure 2 Addition amount (m019) Figure 3 Figure 5
Claims (1)
、 該第１層のII−VI族間化合物と同一のII−VI族間化合物
を主成分とし、VII族元素を添加したｎ形II−VI族間化
合物半導体からなる第２層と、該第１層のII−VI族間化
合物と同一のII−VI族間化合物を主成分とするｐ形II−
VI族間化合物半導体からなる第３層と を有することを特徴とするII−VI族間化合物半導体装置
。(1) A first layer consisting of an n-type II-VI intergroup compound semiconductor, the main component of which is the same II-VI intergroup compound as the II-VI intergroup compound of the first layer, and a group VII element added. a second layer consisting of an n-type II-VI intergroup compound semiconductor, and a p-type II-VI layer consisting mainly of the same II-VI intergroup compound as the II-VI intergroup compound of the first layer.
A II-VI intergroup compound semiconductor device, characterized in that it has a third layer made of an intergroup VI compound semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2163747A JPH0456176A (en) | 1990-06-21 | 1990-06-21 | Compound semiconductor device between ii-vi families |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2163747A JPH0456176A (en) | 1990-06-21 | 1990-06-21 | Compound semiconductor device between ii-vi families |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0456176A true JPH0456176A (en) | 1992-02-24 |
Family
ID=15779923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2163747A Pending JPH0456176A (en) | 1990-06-21 | 1990-06-21 | Compound semiconductor device between ii-vi families |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0456176A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213378A (en) * | 1987-03-02 | 1988-09-06 | Toshiba Corp | Manufacture of semiconductor light emitting element |
| JPH0268968A (en) * | 1988-09-02 | 1990-03-08 | Sharp Corp | Compound semiconductor light-emitting device |
-
1990
- 1990-06-21 JP JP2163747A patent/JPH0456176A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213378A (en) * | 1987-03-02 | 1988-09-06 | Toshiba Corp | Manufacture of semiconductor light emitting element |
| JPH0268968A (en) * | 1988-09-02 | 1990-03-08 | Sharp Corp | Compound semiconductor light-emitting device |
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