JPH0453246B2 - - Google Patents
Info
- Publication number
- JPH0453246B2 JPH0453246B2 JP27995684A JP27995684A JPH0453246B2 JP H0453246 B2 JPH0453246 B2 JP H0453246B2 JP 27995684 A JP27995684 A JP 27995684A JP 27995684 A JP27995684 A JP 27995684A JP H0453246 B2 JPH0453246 B2 JP H0453246B2
- Authority
- JP
- Japan
- Prior art keywords
- inner cylinder
- conductor
- photoelectric conversion
- conversion element
- striped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000008054 signal transmission Effects 0.000 claims description 5
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000003331 infrared imaging Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は赤外線撮像装置の、特に赤外線検知器
内のリード線配線方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for wiring lead wires in an infrared imaging device, particularly an infrared detector.
近年赤外線の応用が多方面にわたつて広がつて
いるが、赤外線撮像装置は例えば公害監視用など
の分野で積極的に利用されつつある。第２図にそ
の構造を示した。この赤外線撮像装置の赤外線検
知器６０用の受光素子として通常用いられる多素
子光電変換素子３は例えば水銀カドミウムテルル
（HgCdTe）などの多元半導体を材料としたペレ
ツト状のものである。そしてこれは一枚の基板の
上に複数個例えば120個の素子が配設されている
ものであつて、例えば70〓近辺の低温に冷却して
用いられる。 In recent years, the application of infrared light has been expanding in many fields, and infrared imaging devices are being actively used in fields such as pollution monitoring, for example. Figure 2 shows its structure. The multi-element photoelectric conversion element 3, which is normally used as a light receiving element for the infrared detector 60 of this infrared imaging device, is a pellet-shaped element made of a multicomponent semiconductor such as mercury cadmium tellurium (HgCdTe). This is a device in which a plurality of elements, for example 120 elements, are arranged on one substrate, and is used after being cooled to a low temperature of, for example, around 70°C.
その冷却方法としては、第２図に示した外筒１
の内部に内筒２を配し、これら外筒と内筒との空
間５０を真空に引き、上記光電変換素子３は内筒
２の一部に封着されたヒートシンク（銅ブロツ
ク）４の上に熱的に接着しておいた上で前記内筒
２の内側に配設された吸熱手段８によつて冷却さ
れる。なお、この吸熱手段８は筐体１０内に収納
された図示しない循環冷却器から供給される、例
えばヘリウム（He）ガスなどの冷媒が通される
冷却塔５、熱伝導率の良好なスプリング６、およ
びタブレツト７より成つている。そして入射赤外
線は外筒１に取付けられたゲルマニウム（Ge）
窓１１を介して矢印イ方向に入射するのである
が、光電変換素子３は上記のように120個からな
る多素子構成となつており、その各素子を単位画
素としてそれぞれ光電変換がなされて別個に得ら
れた電気信号は、外筒１の周囲に放射状に配設さ
れた120本からなる端子１４によつてそれぞれ取
出される。 As a cooling method, the outer cylinder 1 shown in FIG.
The inner cylinder 2 is arranged inside the cylinder, the space 50 between the outer cylinder and the inner cylinder is evacuated, and the photoelectric conversion element 3 is placed on a heat sink (copper block) 4 sealed to a part of the inner cylinder 2. After being thermally bonded to the inner cylinder 2, the inner cylinder 2 is cooled by a heat absorbing means 8 disposed inside the inner cylinder 2. The heat absorbing means 8 includes a cooling tower 5 through which a refrigerant such as helium (He) gas is supplied from a circulation cooler (not shown) housed in the housing 10, and a spring 6 having good thermal conductivity. , and a tablet 7. And the incident infrared rays are caused by germanium (Ge) attached to the outer cylinder 1.
The light enters through the window 11 in the direction of arrow A, and the photoelectric conversion element 3 has a multi-element configuration consisting of 120 elements as described above, and each element is treated as a unit pixel and photoelectrically converted and converted into a separate pixel. The electrical signals obtained are respectively taken out by 120 terminals 14 arranged radially around the outer cylinder 1.
ところで光電変換素子３に設けられた120個か
らなるボンデイングエリアと前記端子１４との間
の接続は従来は内筒２のまわりの真空部中に張ら
れた120本からなる裸のリード線１２によつて行
なわれていた。
By the way, the connection between the 120 bonding areas provided in the photoelectric conversion element 3 and the terminals 14 has conventionally been made using 120 bare lead wires 12 stretched in the vacuum area around the inner cylinder 2. It was done in a different way.
上記の構成のものにあつては、リード線１２は
特別にそれぞれシールドが施されたものではな
い。そのために、この信号伝送線としての役割を
果たす120本からなるリード線１２の特性インピ
ーダンスは非常に高い値を有することになる。と
ころが光電変換素子３を冷却する主体は筐体１０
内に収納されている循環冷凍器であつて、これが
稼動する際には相当な電気的雑音を発生するもの
である。したがつてこの冷凍器はもちろん、赤外
線撮像装置内の赤外線検知器６０の周囲に配置さ
れている各種の機械駆動系のモータ類からの雑音
は容易に高インピーダンスのリード線１２によつ
て拾われる。その結果赤外線検知器６０の信号対
雑音比Ｓ／Ｎは実質的に低下させられてしまうと
いう欠点があつた。
In the structure described above, the lead wires 12 are not specially shielded. Therefore, the characteristic impedance of the 120 lead wires 12 that serve as signal transmission lines has a very high value. However, the main body that cools the photoelectric conversion element 3 is the housing 10.
This is a circulating refrigerator housed inside the refrigerator, and when it operates, it generates a considerable amount of electrical noise. Therefore, noise from not only the refrigerator but also the motors of various mechanical drive systems disposed around the infrared detector 60 in the infrared imaging device is easily picked up by the high impedance lead wire 12. . As a result, the signal-to-noise ratio of the infrared detector 60 is substantially reduced.
本発明は上記欠点に鑑みてなされたもので、ま
ず光電変換素子３の基板を、共通接地ラインとし
て働き、同筒２の周囲に筒状をなした形で張付け
られた共通導体に接続して120素子分全体の共通
電路とする。そして当該共通導体上全面に薄い絶
縁膜を張り、この絶縁膜の上面の周囲に、冷却塔
５または内筒２の長手方向に複数本（この場合に
は120本）張りつけられたストライプ状の帯状導
電体を介して、外筒１の周囲に複数本（120本）
放射状に配設された端子１４のそれぞれに接続す
るようにしたものである。
The present invention has been made in view of the above-mentioned drawbacks, and first, the substrate of the photoelectric conversion element 3 is connected to a common conductor that serves as a common ground line and is attached in a cylindrical shape around the tube 2. A common electrical circuit for all 120 elements. A thin insulating film is then applied over the entire surface of the common conductor, and a plurality of stripes (120 in this case) are attached around the top surface of the insulating film in the longitudinal direction of the cooling tower 5 or inner cylinder 2. Multiple wires (120 wires) around outer cylinder 1 via conductor.
It is designed to be connected to each of the terminals 14 arranged radially.
上記構造の電気信号導出方法によれば、光電変
換素子３上に設けられた120個からなる各素子と
端子１４とを接続するストライプ状の信号伝送線
の一本一本の特性インピーダンスは、上記の薄い
絶縁膜を介して下地の広面積からなる共通導体と
の間の関係で決定され、その値は充分低いものと
なるので外来雑音を拾うことはなく、その結果赤
外線検知器６０としてはＳ／Ｎ比が高い高性能の
ものとなるので、その効果は大なるものとなる。
According to the electrical signal derivation method having the above structure, the characteristic impedance of each striped signal transmission line connecting each of the 120 elements provided on the photoelectric conversion element 3 and the terminal 14 is as described above. The infrared detector 60 is determined by the relationship between a common conductor consisting of a wide area on the base through a thin insulating film, and its value is sufficiently low so that no external noise is picked up, and as a result, the infrared detector 60 Since it has high performance with a high /N ratio, the effect is great.
以下、図面を参照して本発明の実施例を詳細に
説明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図ａ，ｂは本発明に係る赤外線検知器のリ
ード線配線構体の要部のみを図示したもので、前
記第２図で図示した吸熱手段８、外筒１、ならび
に筐体１０などは理解の便宜のために省略されて
いる。そして第１図ｂはこの要部構造図の上面図
であり、そのＡ〜A′断面を示したものが第１図
ａである。 FIGS. 1a and 1b illustrate only the main parts of the lead wire wiring structure of the infrared detector according to the present invention, and the heat absorbing means 8, outer cylinder 1, casing 10, etc. shown in FIG. Omitted for convenience of understanding. FIG. 1b is a top view of the main structure, and FIG. 1a is a cross-sectional view taken from A to A'.
すなわち、まず内筒２の周囲に例えば蒸着なの
方法を用いて厚さ100μｍ程度の例えば銅（Cu）
の薄い膜２２を配設する。そしてその上面周囲を
薄い絶縁膜（例えばポリエステル製）２３で包む
ようにして二重層を形成し、全面的に覆つてしま
い、そのさらに上面に内筒２の長手方向と所定の
角度（この場合は同筒２の長手方向）となるよう
に複数本（素子数が120個ならば120本）のストラ
イプ状の細線帯状の導体２４を互いに平行に張り
付ける。 That is, first, around the inner cylinder 2, for example, copper (Cu) with a thickness of about 100 μm is deposited using a method such as vapor deposition.
A thin film 22 is provided. Then, a double layer is formed by wrapping the upper surface with a thin insulating film (made of polyester, for example) 23 to completely cover the entire surface, and the upper surface is further placed at a predetermined angle with the longitudinal direction of the inner cylinder 2 (in this case, the same cylinder A plurality of striped (120 if the number of elements is 120) conductors 24 in the form of thin wire strips are pasted in parallel to each other so that the conductors 24 are parallel to each other.
こうしておいた上で、内筒の所定部（例えば頂
部）に設けられたヒートシンク４の上部に接着さ
れている光電変換素子３における図示しない各単
位素子に設けられているボンデイングエリアのそ
れぞれは、上記ストライプ状導体２４の上端２４
ａに、それぞれボンデイングリード２０をもつて
なるべく短く接続する。一方120個の単位素子を
有する光電変換素子の共通電極は、別にリード線
２６を用いて共通導体としての前記銅薄膜２２の
上端２２ａに接続する。このようにすればストラ
イプ状導体２４が有する特性インピーダンスを相
当程度小さな値に下げることができ、しかも下地
導体としての共通導体すなわち銅薄膜との間に介
在する絶縁体はポリエステル膜であるから、信号
伝送時の誘電体損を極めて小さな値に抑えること
ができる。 After this, each of the bonding areas provided in each unit element (not shown) in the photoelectric conversion element 3 bonded to the upper part of the heat sink 4 provided in a predetermined part (for example, the top part) of the inner cylinder is Upper end 24 of striped conductor 24
a as short as possible using bonding leads 20, respectively. On the other hand, the common electrode of the photoelectric conversion element having 120 unit elements is connected to the upper end 22a of the copper thin film 22 as a common conductor using a separate lead wire 26. In this way, the characteristic impedance of the striped conductor 24 can be reduced to a considerably small value, and since the insulator interposed between the common conductor as the underlying conductor, that is, the copper thin film, is a polyester film, the signal Dielectric loss during transmission can be suppressed to an extremely small value.
上記銅薄膜２２の下端２２ａは共通接地線とし
て外筒１の一部に設けられている図示しない共通
端子に接続し、これと同様に各ストライプ導体２
４のそれぞれの下端２４ｂはやはりボンデイング
リード（図示せず）を用いて、外筒１の周囲に放
射状に配設されている端子１４に接続する。ちな
みに別の方法として、ポリエステル膜の上下両主
面の全面を金属膜で被覆した材料を用い、その片
方の主面はそのままにしておく一方で他の主面の
金属膜を例えばエツチングなどの手法を用いてあ
らかじめストライプ状導体２４に形成しておい
て、こうしたものを内筒２の面に巻きつけること
もできる。 The lower end 22a of the copper thin film 22 is connected to a common terminal (not shown) provided in a part of the outer cylinder 1 as a common ground line, and similarly, each striped conductor 2
The lower ends 24b of each of the terminals 4 are connected to the terminals 14 arranged radially around the outer cylinder 1, again using bonding leads (not shown). Incidentally, another method is to use a material in which both the upper and lower main surfaces of a polyester film are entirely covered with a metal film, and leave one main surface as it is while etching the metal film on the other main surface. It is also possible to form the striped conductor 24 in advance using a striped conductor and wrap it around the surface of the inner cylinder 2.
一般に内筒２と外筒１との距離は短く、それに
較べれば内筒の長さＬは大である。このために、
光電変換素子３から端子１４までのほとんどの長
さを上記ストライプ状導体２４の長さでまかなつ
てしまうことができる。したがつて光電変換素子
３〜端子１４間の信号伝達手段としてのいわゆる
伝送線路は特性インピーダンスの低いストライプ
状導体で構成されてしまうことになり、このため
に赤外線検知器６０としては周囲からの外来雑音
を拾い難いものとなる。これはとりもなおさず該
検知器６０の実効Ｓ／Ｎ比を向上せしめ得たこと
に他ならず、実質的に入射赤外線による検知能力
の著しい改善をもたらすことができる。 Generally, the distance between the inner tube 2 and the outer tube 1 is short, and the length L of the inner tube is large compared to that. For this,
Most of the length from the photoelectric conversion element 3 to the terminal 14 can be covered by the length of the striped conductor 24. Therefore, the so-called transmission line serving as a signal transmission means between the photoelectric conversion element 3 and the terminal 14 is composed of a striped conductor with low characteristic impedance. It becomes difficult to pick up noise. This is nothing but an improvement in the effective S/N ratio of the detector 60, and can substantially improve the detection ability of incident infrared rays.
以上、説明したように、本発明は、赤外線検知
器自体の実質的検知能力を高めうるものであるた
めに、実用上多大の効果が期待できる。
As described above, since the present invention can improve the substantial detection ability of the infrared detector itself, it can be expected to have great practical effects.
第１図ａは本発明に係る赤外線検知器内のリー
ド線配線構体を示した第１図ｂの断面図、第２図
は従来のリード線配線構体を示す図である。
図において、１は外筒、２は内筒、３は光電変
換素子、４はヒートシンク、２０はボンデイング
リード、２２は銅薄膜、２４はストライプ状導
体、をそれぞれ示す。
FIG. 1a is a sectional view of FIG. 1b showing a lead wire wiring structure in an infrared detector according to the present invention, and FIG. 2 is a diagram showing a conventional lead wire wiring structure. In the figure, 1 is an outer cylinder, 2 is an inner cylinder, 3 is a photoelectric conversion element, 4 is a heat sink, 20 is a bonding lead, 22 is a copper thin film, and 24 is a striped conductor.
Claims (1)
の空間を真空となし、上記内筒の所定の部位に光
電変換素子を配した構成の赤外線検知器におい
て、上記内筒の側面周囲に導電体膜と絶縁体膜と
の２重層を設け、当該絶縁体膜の上面に、複数か
らなるストライプ状の帯状導体を配設し、当該帯
状導体を信号伝送線の片方として用いると共に前
記導電体膜を該信号伝送線の共通導体として利用
するようにしたことを特徴とする赤外線検知器。1. In an infrared detector configured with an outer cylinder outside the inner cylinder, a vacuum between the inner cylinder and the outer cylinder, and a photoelectric conversion element arranged at a predetermined part of the inner cylinder, A double layer of a conductive film and an insulating film is provided around the side surface, a plurality of striped conductors are arranged on the upper surface of the insulating film, and the striped conductor is used as one side of a signal transmission line. An infrared detector characterized in that the conductive film is used as a common conductor of the signal transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27995684A JPS61155925A (en) | 1984-12-28 | 1984-12-28 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27995684A JPS61155925A (en) | 1984-12-28 | 1984-12-28 | Infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155925A JPS61155925A (en) | 1986-07-15 |
| JPH0453246B2 true JPH0453246B2 (en) | 1992-08-26 |
Family
ID=17618265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27995684A Granted JPS61155925A (en) | 1984-12-28 | 1984-12-28 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155925A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2763355B2 (en) * | 1989-12-06 | 1998-06-11 | 富士通株式会社 | Infrared detector |
| JPH0774759B2 (en) * | 1991-09-05 | 1995-08-09 | 松下電器産業株式会社 | Method for manufacturing pyroelectric linear array infrared detection element |
-
1984
- 1984-12-28 JP JP27995684A patent/JPS61155925A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61155925A (en) | 1986-07-15 |
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