JPH0452235B2 - - Google Patents
Info
- Publication number
- JPH0452235B2 JPH0452235B2 JP58044224A JP4422483A JPH0452235B2 JP H0452235 B2 JPH0452235 B2 JP H0452235B2 JP 58044224 A JP58044224 A JP 58044224A JP 4422483 A JP4422483 A JP 4422483A JP H0452235 B2 JPH0452235 B2 JP H0452235B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- resin
- recording member
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011368 organic material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 4
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 4
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims 10
- 239000011347 resin Substances 0.000 claims 10
- 239000000178 monomer Substances 0.000 claims 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 2
- 239000005977 Ethylene Substances 0.000 claims 2
- 150000002222 fluorine compounds Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008685 targeting Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 239000000975 dye Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 14
- 229910010272 inorganic material Inorganic materials 0.000 description 10
- 239000011147 inorganic material Substances 0.000 description 10
- -1 alkyl vinyl ether Chemical compound 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- RIQXSPGGOGYAPV-UHFFFAOYSA-N tetrabenzo(a,c,l,o)pentacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=C5C6=CC=CC=C6C=6C(C5=CC4=C3)=CC=CC=6)=C3)C3=C(C=CC=C3)C3=C21 RIQXSPGGOGYAPV-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- QZHXKQKKEBXYRG-UHFFFAOYSA-N 4-n-(4-aminophenyl)benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1NC1=CC=C(N)C=C1 QZHXKQKKEBXYRG-UHFFFAOYSA-N 0.000 description 1
- RGCKGOZRHPZPFP-UHFFFAOYSA-N Alizarin Natural products C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000000999 acridine dye Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- HFVAFDPGUJEFBQ-UHFFFAOYSA-M alizarin red S Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=C(S([O-])(=O)=O)C(O)=C2O HFVAFDPGUJEFBQ-UHFFFAOYSA-M 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- JDPBLCQVGZLACA-UHFFFAOYSA-N benzo[a]perylene Chemical group C1=CC(C=2C3=CC=CC=C3C=C3C=2C2=CC=C3)=C3C2=CC=CC3=C1 JDPBLCQVGZLACA-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 229920001870 copolymer plastic Polymers 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- 239000001005 nitro dye Substances 0.000 description 1
- 150000002832 nitroso derivatives Chemical class 0.000 description 1
- 239000001006 nitroso dye Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 239000001008 quinone-imine dye Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 239000001016 thiazine dye Substances 0.000 description 1
- 239000001017 thiazole dye Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 239000001003 triarylmethane dye Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
〔発明の利用分野〕
本発明は、記録用部材に関する。とくに基板上
に形成した記録用薄膜にレーザービーム等の記録
用ビームを照射することによつて直接、又は間接
的に発生した熱により該薄膜が局所的に変形され
ることを利用した記録用部材に関する。
〔発明の背景〕
レーザ光によつて局所的に記録膜の変形を行な
い情報の記録を行なう方式において、記録媒体の
熱伝導率が小さいことが必須である。かかる観点
から、これまでTeを主成分とする媒体の検討が
進められているが、記録感度が十分でないこと、
及び材料に毒性があることが問題となつている。
それに反して有機物はその熱伝導率が極めて小さ
いこと、及び毒性のない材料を選べるという利点
がある。そのため有機物を用いた記録膜が各所で
検討されている。記録ビームを吸収させるため
に、有機層に接して無機層を設ける記録膜（特願
昭54−34424）あるいは有機染料を用いる記録膜
等である。ところが、これらにおいては形成する
ビツトの形状が悪いため、十分なＳ／Ｎが得られ
ていないということが明らかになつた。
〔発明の目的〕
本発明は、記録層である有機物層の変形を捉進
し、良好な記録ビツトをあけることにより再生
Ｓ／Ｎ比の大きい、なおかつ記録感度の高い記用
録部材を提供することにある。
〔発明の概要〕
本発明は、有機層の下層に表面エネルギーが小
さく、しかも熱により変形しない層を設け、有機
層と下層との親和性を低くすることにより上記欠
点を改善したものである。その手段としてスパツ
タ法及び／又はプラズマ重合法により、フツ素系
ポリマー層を形成しその上に熱によつて変形され
る有機物層を形成した。本発明の記録用部材は、
一例として第１図ａに示す如き断面構造を持つ。
これは、光吸収層２で発生した熱により記録層５
を変形する構造である。本記録用部材はガラス又
はプラスチツク材料からなる基材１の上部に形成
された光を吸収して熱を発生する第１の無機材料
層２、及び該無機材料層の上に形成された反射率
を読み出し光の波長に合わせるための第２の無機
材料層３、更にこの上に形成されたフツ素系ポリ
マーからなる第１の有機材料層４、及びこの上に
形成された第２の有機材料層５とからなる。本記
録用部材に対して基板側あるいは有機材料層側か
ら照射されたビームは第１の無機材料層に吸収さ
れ、この時発生した熱によつて第２の有機材料層
が変形される。従つてここで用いられる第２の有
機材料は記録光を吸収しないものでもよい。第１
及び第２の無機材料としては前記特願昭54−
34424に記載されている材料を使うことができる。
第１の有機材料層は、第２の有機材料層との親
和性を低くし、記録層の変形を促進するものであ
るから、第２の有機材料層の材料より表面エネル
ギーの低い材料であればいかなる材料でも用いる
ことができる。一般に、表面エネルギーが低い有
機化合物としては、フツ素を含む化合物が知られ
ている。その様な材料には、第１群として、テト
ラフルオロエチレン、ヘキサフルオロプロペン、
クロロトリフルオロエチレン、フツ化ビニル、フ
ツ化ビニリデンなどの重合物、第２群としてテト
ラフルオロエチレン−ヘキサフルオロプロペン共
重合体、テトラフルオロエチレン−ペルフルオロ
（アルキルビニルエーテル）共重合体などの共重
合体プラスチツク、第３群としてフツ化ビニリデ
ン−ヘキサフルオロプロペン共重合体、ポリ（ト
リフルオロプロピルメチルシロキサン）、テトラ
フルオロエチレン−プロピレン共重合体、テトラ
フルオロエチレン−トリフルオロニトロソメタン
共重合体、ポリ（フルオロアルコキシホスフアゼ
ン）などのフツ素系エラストマーなどがあげられ
る。これらは、単体又は混合物で用いることがで
きる。特にプラズマ重合により形成する材料とし
ては、第１群の材料がより好ましい。この第１の
有機材料層の厚みは、薄すぎると均一な膜となら
ず、また厚すぎると感度が低下することから、５
〜50nｍの範囲が好ましく、５〜15nｍの範囲が
より好ましい。
第２の有機材料層は、炭化水素、炭化水素のハ
ロゲン誘導体、アルコール、カルボン酸の金属
塩、アルデヒド、ケトン、ニトロ化合物、ニトロ
ソ化合物、アミノ化合物、スピラン系化合物、複
素環式化合物等を少なくとも１種含む、また上記
材料とBiやTeなどの無機材料との混合層として
用いても良い。また前記第１の有機材料層に用い
る高分子化合物以外の合成又は天然高分子化合物
を用いることもできる。
これらの有機材料のうち、融点又は軟化点又は
昇華温度が60℃以上300℃以下のものが好ましく、
70℃以上200℃以下のものが特に好ましい。
融点又は軟化点又は昇華温度が低すぎると信頼
性が低下する。高すぎると有機材料層を変形する
ために必要なビームのパワーが大きくなる。すな
わち記録感度が低下する。
第２の有機材料層の厚みは20〜200nｍの範囲
が好ましく、30〜100nｍの範囲が特に好ましい。
膜厚が小さすぎると、有機材料層を融解除去した
部分と変形しない部分との反射率差が小さく、十
分な再生信号を得ることができない。膜厚が大き
すぎると、記録感度が低下する。
無機材料層の形成方法は、スパツタリング、電
子ビーム蒸着、真空蒸着などの方法によつて行な
う。
第１の有機材料層の形成は、スパツタ法又はプ
ラズマ重合法などの方法で、第２の有機材料層の
形成は、真空蒸着、電子ビーム蒸着、スパツタリ
ングなどの方法によつて行なう。
本発明の別の例として、第１図ｂに示す如き断
面構造を持つ。これは、有機物層自身が光を吸収
して熱を発生し、その熱で有機物層が変形される
構造を持つ情報記録媒体である。この記録媒体
は、所定基板１上に無機材料からなる光反射層
２、更にこの上に形成されたフツ素ポリマーから
なる第１の有機材料層４及びこの上に形成された
光を吸収して熱を発生する第２の有機材料からな
る記録層５から構成されている。無機材料層の材
料としては、反射率が大きくかつ安定な材料であ
ればいかなる材料も用いることができる。第１の
有機材料層としては、上記の材料を用いることが
できる。第２の有機材料層の材料としては、光を
吸収して熱を発生するものであればいかなる材料
も用いることが出来る。たとえば、ニトロソ染
料、ニトロ染料、アゾ染料、スチルベン染料、ジ
フエニルメタン染料、トリアリールメタン染料、
ザンセン染料、アクリジン染料、キノリン染料、
メチン染料、ポリメチン染料、チアゾール染料、
インダミン染料、アジン染料、オキサジン染料、
チアジン染料、アミノケトン染料、オキシケトン
染料、アントラキノン染料、インジゴイド染料、
フタロシアニン染料、トリフエニルメタン染料、
ピラゾロン染料、キサンテン染料、アリザリン染
料、キノンイミン染料、メチン染料、シアニン色
素などの有機染料、アゾ系、キノリン系、アント
ラキノン系、トリフエニルメタン系、フタロシア
ニン系などの有機顔料、テトラベンゾ〔de、hi、
op、st〕ペンタセン、ベンゾ〔ａ〕ペリレンなど
の多環系芳香族化合物などを用いることができ
る。これらの材料は、単体で、または炭化水素、
炭化水素のハロゲン化物、種々の高分子化合物中
に分散して用いても良い。
〔発明の実施例〕
実施例 １（第１図ａ）
直径30cm、厚さ1.1mmの円板状化学強化ガラス
を回転数120rpmで回転させながら、この円板上
にBiを50nｍの膜厚に蒸着し、次にSb2S3を30nｍ
の厚さに蒸着した。この上に厚さ10nｍのテトラ
フルオロエチレンのプラズマ重合膜を形成し、更
にこの上にｎ−C36H74（融点76℃）を50nｍの膜
厚に蒸着して記録用部材を完成した。この記録用
部材を回転数240rpmで回転させながら、半導体
レーザーで記録再生を行つた。半導体レーザーの
発振波長は830nｍ、最大出力15ｍＷであり、記
録媒体上のスポツト径が1.5μｍになるように集光
した。パネル幅30〜500nsで記録を行い、パルス
幅50nsの時の記録開始パワーは20ｍＪ／cm2であ
り、40ｍＪ／cm2で記録した時の再生Ｓ／Ｎ比はフ
ツ素ポリマーを含まない記録用部材に比べて6dB
向上した。記録ピツトをSEMで観察したところ、
フツ素系重合膜を有する記録膜ではこれがないも
のに比べて、周囲のはつきりしたきれいな穴があ
いていた。またこの記録に要するエネルギーは膜
厚30nｍのTe膜の約1/3である。
実施例 ２（第１図ａ）
実施例１と同様の方法でガラス円板上にBiを
50nｍの膜厚に蒸着した。この上に厚さ10nｍの
テトラフルオロエチレンのプラズマ重合膜を形成
し、更にこの上にｎ−C36H74とテトラベンゾペ
ンタセンを70：30重量比となるように同時に蒸着
し、70nｍの膜を作製した。この記録用部材を回
転数240rpmで回転させながら、1.5μｍに集光し
たHe−Neレーザーで記録再生を行つた。記録パ
ルス幅30〜500nsで記録を行い、パルス幅50nsの
時の記録開始パワーは25ｍＪ／cm2であつた。再生
Ｓ／Ｎ比についても、実施例１と同様の結果を得
た。
実施例 ３（第１図ｂ）
ポリテトラフルオロエチレンをターゲツトとし
てBi上にスパツタ法によりポリテトラフルオロ
エチレン層を形成し、この上にｎ−C36H74とテ
トラベンゾペンタセンを70：30重量比となるよう
に同時に蒸着し70nｍの膜を作製した。この記録
用部材の記録感度と再生Ｓ／Ｎについて実施例２
と同様の結果を得た。
〔発明の効果〕
本発明によれば、記録ビツト形状が改善できる
ので、信号のＳ／Ｎ比を向上させることができ
る。
[Field of Application of the Invention] The present invention relates to a recording member. In particular, a recording member that utilizes the fact that a recording thin film formed on a substrate is locally deformed by heat generated directly or indirectly by irradiating a recording beam such as a laser beam to the recording thin film formed on a substrate. Regarding. [Background of the Invention] In a system in which information is recorded by locally deforming a recording film using a laser beam, it is essential that the recording medium has a low thermal conductivity. From this point of view, media containing Te as a main component have been studied, but recording sensitivity is not sufficient;
Also, the toxicity of the materials has become a problem.
On the other hand, organic materials have the advantage that their thermal conductivity is extremely low and that non-toxic materials can be selected. For this reason, recording films using organic substances are being considered in various places. These include a recording film in which an inorganic layer is provided in contact with an organic layer in order to absorb the recording beam (Japanese Patent Application No. 1983-34424), or a recording film using an organic dye. However, it has become clear that in these cases, a sufficient S/N ratio cannot be obtained due to the poor shape of the formed bits. [Object of the Invention] The present invention provides a recording member with a high reproduction S/N ratio and high recording sensitivity by detecting the deformation of an organic layer that is a recording layer and opening good recording bits. There is a particular thing. [Summary of the Invention] The present invention improves the above drawbacks by providing a layer below the organic layer that has low surface energy and does not deform due to heat, thereby lowering the affinity between the organic layer and the lower layer. As a means for this purpose, a fluorine-based polymer layer was formed by a sputtering method and/or a plasma polymerization method, and an organic layer deformed by heat was formed thereon. The recording member of the present invention includes:
As an example, it has a cross-sectional structure as shown in FIG. 1a.
This is caused by the heat generated in the light absorption layer 2 causing the recording layer 5 to
It is a structure that transforms. This recording member includes a first inorganic material layer 2 formed on the top of a base material 1 made of glass or plastic material, which absorbs light and generates heat, and a reflectance layer formed on the inorganic material layer. a second inorganic material layer 3 for matching the wavelength of readout light; a first organic material layer 4 made of a fluorine-based polymer formed thereon; and a second organic material formed thereon. It consists of layer 5. The beam irradiated onto the recording member from the substrate side or the organic material layer side is absorbed by the first inorganic material layer, and the second organic material layer is deformed by the heat generated at this time. Therefore, the second organic material used here may not absorb recording light. 1st
And as the second inorganic material, the above-mentioned patent application 1982-
Materials listed in 34424 may be used. Since the first organic material layer has low affinity with the second organic material layer and promotes deformation of the recording layer, it may be made of a material having a lower surface energy than the material of the second organic material layer. Any material can be used. In general, fluorine-containing compounds are known as organic compounds with low surface energy. Such materials include, in the first group, tetrafluoroethylene, hexafluoropropene,
Polymers such as chlorotrifluoroethylene, vinyl fluoride, and vinylidene fluoride; the second group includes copolymer plastics such as tetrafluoroethylene-hexafluoropropene copolymers and tetrafluoroethylene-perfluoro(alkyl vinyl ether) copolymers; , the third group includes vinylidene fluoride-hexafluoropropene copolymer, poly(trifluoropropylmethylsiloxane), tetrafluoroethylene-propylene copolymer, tetrafluoroethylene-trifluoronitrosomethane copolymer, poly(fluoroalkoxy) Examples include fluorine-based elastomers such as phosphazene). These can be used alone or in mixtures. In particular, materials of the first group are more preferable as materials formed by plasma polymerization. The thickness of this first organic material layer is set to 5.
A range of 50 nm to 50 nm is preferred, and a range of 5 to 15 nm is more preferred. The second organic material layer contains at least one hydrocarbon, a halogen derivative of a hydrocarbon, an alcohol, a metal salt of a carboxylic acid, an aldehyde, a ketone, a nitro compound, a nitroso compound, an amino compound, a spiran compound, a heterocyclic compound, etc. It may also be used as a mixed layer containing seeds, or a mixed layer of the above materials and an inorganic material such as Bi or Te. Furthermore, synthetic or natural polymer compounds other than the polymer compound used for the first organic material layer can also be used. Among these organic materials, those with a melting point, softening point, or sublimation temperature of 60°C or more and 300°C or less are preferable,
Particularly preferred is 70°C or higher and 200°C or lower. If the melting point, softening point or sublimation temperature is too low, reliability will decrease. If it is too high, the beam power required to deform the organic material layer increases. In other words, recording sensitivity decreases. The thickness of the second organic material layer is preferably in the range of 20 to 200 nm, particularly preferably in the range of 30 to 100 nm.
If the film thickness is too small, the difference in reflectance between the portion where the organic material layer is melted and removed and the portion that is not deformed will be small, making it impossible to obtain a sufficient reproduction signal. If the film thickness is too large, recording sensitivity will decrease. The inorganic material layer is formed by sputtering, electron beam evaporation, vacuum evaporation, or the like. The first organic material layer is formed by a method such as a sputtering method or a plasma polymerization method, and the second organic material layer is formed by a method such as vacuum evaporation, electron beam evaporation, or sputtering. Another example of the present invention has a cross-sectional structure as shown in FIG. 1b. This is an information recording medium that has a structure in which the organic layer itself absorbs light and generates heat, and the organic layer is deformed by the heat. This recording medium includes a light reflecting layer 2 made of an inorganic material on a predetermined substrate 1, a first organic material layer 4 made of a fluoropolymer formed on this, and a light absorbing layer formed on this. It consists of a recording layer 5 made of a second organic material that generates heat. Any material can be used as the material for the inorganic material layer as long as it has a high reflectance and is stable. The above-mentioned materials can be used as the first organic material layer. Any material that absorbs light and generates heat can be used as the material for the second organic material layer. For example, nitroso dyes, nitro dyes, azo dyes, stilbene dyes, diphenylmethane dyes, triarylmethane dyes,
Zanzen dye, acridine dye, quinoline dye,
methine dye, polymethine dye, thiazole dye,
indamine dye, azine dye, oxazine dye,
Thiazine dyes, aminoketone dyes, oxyketone dyes, anthraquinone dyes, indigoid dyes,
Phthalocyanine dye, triphenylmethane dye,
Organic dyes such as pyrazolone dyes, xanthene dyes, alizarin dyes, quinoneimine dyes, methine dyes, and cyanine dyes; organic pigments such as azo, quinoline, anthraquinone, triphenylmethane, and phthalocyanine; tetrabenzo [de, hi,
Polycyclic aromatic compounds such as op, st] pentacene and benzo[a]perylene can be used. These materials can be used alone or in combination with hydrocarbons,
It may be used by being dispersed in a hydrocarbon halide or various polymer compounds. [Embodiments of the Invention] Example 1 (Figure 1a) While rotating a disc-shaped chemically strengthened glass with a diameter of 30 cm and a thickness of 1.1 mm at a rotation speed of 120 rpm, Bi was deposited on the disc to a thickness of 50 nm. evaporate, then 30nm of Sb 2 S 3
It was deposited to a thickness of . A plasma-polymerized tetrafluoroethylene film with a thickness of 10 nm was formed on this, and n-C 36 H 74 (melting point: 76° C.) was further vapor-deposited to a thickness of 50 nm to complete a recording member. While rotating this recording member at a rotational speed of 240 rpm, recording and reproduction were performed using a semiconductor laser. The oscillation wavelength of the semiconductor laser was 830 nm, the maximum output was 15 mW, and the light was focused so that the spot diameter on the recording medium was 1.5 μm. Recording is performed with a panel width of 30 to 500 ns, and the recording start power when the pulse width is 50 ns is 20 mJ/ cm2 , and the reproduction S/N ratio when recording at 40 mJ/ cm2 is for recording that does not contain fluoropolymer. 6dB compared to the material
Improved. When the recording pit was observed with SEM,
The recording film with the fluorine-based polymer film had holes with clearer edges and sharp edges compared to the recording film without the fluorine polymer film. Also, the energy required for this recording is about 1/3 of that of a Te film with a thickness of 30 nm. Example 2 (Figure 1a) Bi was deposited on a glass disk using the same method as in Example 1.
The film was deposited to a thickness of 50 nm. A plasma-polymerized film of tetrafluoroethylene with a thickness of 10 nm was formed on this, and then n-C 36 H 74 and tetrabenzopentacene were simultaneously deposited at a weight ratio of 70:30 to form a 70 nm film. Created. While rotating this recording member at a rotation speed of 240 rpm, recording and reproduction were performed using a He--Ne laser focused at 1.5 μm. Recording was performed with a recording pulse width of 30 to 500 ns, and the recording start power when the pulse width was 50 ns was 25 mJ/cm 2 . Regarding the reproduction S/N ratio, the same results as in Example 1 were obtained. Example 3 (Fig. 1b) A polytetrafluoroethylene layer was formed on Bi by sputtering using polytetrafluoroethylene as a target, and n-C 36 H 74 and tetrabenzopentacene were added at a weight ratio of 70:30 on this layer. A 70 nm film was fabricated by simultaneous vapor deposition. Example 2 regarding recording sensitivity and reproduction S/N of this recording member
obtained similar results. [Effects of the Invention] According to the present invention, since the recording bit shape can be improved, the S/N ratio of the signal can be improved.
第１図ａ及びｂは、本発明の記録用部材の実施
例の断面図である。
１……基板、２，３……無機材料層、４……第
一の有機材料層、５……第二の有機材料層。
FIGS. 1a and 1b are cross-sectional views of an embodiment of the recording member of the present invention. 1... Substrate, 2, 3... Inorganic material layer, 4... First organic material layer, 5... Second organic material layer.
Claims (1)
けられた記録層を部分的に変形せしめて情報の記
録を行う記録用部材において、前記記録層の基板
側に接してフツ素系化合物の層を設けたことを特
徴とする記録用部材。 ２ 上記レーザー光照射により部分的な変形を生
じる層が有機材料からなることを特徴とする特許
請求の範囲第１項記載の記録用部材。 ３ 上記レーザー光照射により部分的な変形を生
じる層がBi、Teから選ばれる少なくとも一種の
化合物を主成分とすることを特徴とする特許請求
の範囲第１項記載の記録用部材。 ４ 上記レーザー光照射により部分的に変形する
層と基板の間に存在するフツ素系化合物が、四フ
ツ化エチレン樹脂、三フツ化塩化エチレン樹脂、
六フツ化プロピレン樹脂、フツ化ビニリデン樹
脂、フツ化ビニル樹脂、あるいは、これらの単量
体どうしの共重合体、あるいはこれらの混合物、
あるいは、これらの単量体を主成分とする共重合
体、あるいは、これらを主成分とする混合物であ
ることを特徴とする特許請求の範囲第１項記載の
記録用部材。 ５ 上記レーザー光照射により部分的に変形する
層と基板の間に存在するフツ素系化合物がテトラ
フルオロエチレンの重合体であることを特徴とす
る特許請求の範囲第１項記載の記録用部材。 ６ 上記レーザー光照射により部分的に変形する
層と基板の間に存在するフツ素系化合物の層が、
テトラフルオロエチレン、ヘキサフルオロプロペ
ン、クロロトリフルオロエチレン、フツ化ビニ
ル、フツ化ビニリデン、あるいはこれらを主成分
とする混合ガスを原料とするプラズマ重合法、あ
るいは、四フツ化エチレン樹脂、三フツ化塩化エ
チレン樹脂、六フツ化プロピレン樹脂、フツ化ビ
ニリデン樹脂、フツ化ビニル樹脂、あるいは、こ
れらの単量体どうしの共重合体、あるいはこれら
を主成分として含む混合物をターゲツトとしたス
パツタ法で形成することを特徴とする特許請求の
範囲第１項記載の記録用部材。[Scope of Claims] 1. In a recording member that records information by partially deforming a recording layer provided on a substrate by irradiation with a focused laser beam, the recording member has a lid in contact with the substrate side of the recording layer. A recording member characterized by being provided with a layer of an elementary compound. 2. The recording member according to claim 1, wherein the layer that is partially deformed by laser beam irradiation is made of an organic material. 3. The recording member according to claim 1, wherein the layer that partially deforms when irradiated with laser light contains at least one compound selected from Bi and Te as a main component. 4 The fluorine compound present between the layer partially deformed by the laser beam irradiation and the substrate is a tetrafluoroethylene resin, a trifluorochloride ethylene resin,
Propylene hexafluoride resin, vinylidene fluoride resin, vinyl fluoride resin, copolymers of these monomers, or mixtures thereof,
Alternatively, the recording member according to claim 1 is a copolymer containing these monomers as main components, or a mixture containing these monomers as main components. 5. The recording member according to claim 1, wherein the fluorine compound present between the layer partially deformed by laser beam irradiation and the substrate is a polymer of tetrafluoroethylene. 6 The layer of fluorine-based compound existing between the layer partially deformed by the laser beam irradiation and the substrate,
Plasma polymerization method using tetrafluoroethylene, hexafluoropropene, chlorotrifluoroethylene, vinyl fluoride, vinylidene fluoride, or a mixed gas containing these as main components, or tetrafluoroethylene resin, trifluorochloride Formation by sputtering targeting ethylene resin, propylene hexafluoride resin, vinylidene fluoride resin, vinyl fluoride resin, copolymers of these monomers, or mixtures containing these as main components. A recording member according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58044224A JPS59171686A (en) | 1983-03-18 | 1983-03-18 | Recording member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58044224A JPS59171686A (en) | 1983-03-18 | 1983-03-18 | Recording member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59171686A JPS59171686A (en) | 1984-09-28 |
| JPH0452235B2 true JPH0452235B2 (en) | 1992-08-21 |
Family
ID=12685568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58044224A Granted JPS59171686A (en) | 1983-03-18 | 1983-03-18 | Recording member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59171686A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2551930B2 (en) * | 1984-01-20 | 1996-11-06 | 日本電気株式会社 | Optical recording medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57138066A (en) * | 1982-01-20 | 1982-08-26 | Hitachi Ltd | Information recorder |
| JPS5862095A (en) * | 1981-10-09 | 1983-04-13 | Fujitsu Ltd | Recording medium |
| JPS5898289A (en) * | 1981-12-07 | 1983-06-11 | Konishiroku Photo Ind Co Ltd | Optical information recording medium |
| JPS58118045A (en) * | 1981-12-29 | 1983-07-13 | Matsushita Electric Ind Co Ltd | Coating method of optical recording disk |
| JPS5990246A (en) * | 1982-11-15 | 1984-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Laser recording medium |
-
1983
- 1983-03-18 JP JP58044224A patent/JPS59171686A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5862095A (en) * | 1981-10-09 | 1983-04-13 | Fujitsu Ltd | Recording medium |
| JPS5898289A (en) * | 1981-12-07 | 1983-06-11 | Konishiroku Photo Ind Co Ltd | Optical information recording medium |
| JPS58118045A (en) * | 1981-12-29 | 1983-07-13 | Matsushita Electric Ind Co Ltd | Coating method of optical recording disk |
| JPS57138066A (en) * | 1982-01-20 | 1982-08-26 | Hitachi Ltd | Information recorder |
| JPS5990246A (en) * | 1982-11-15 | 1984-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Laser recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59171686A (en) | 1984-09-28 |
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