JPH0451989B2 - - Google Patents
Info
- Publication number
- JPH0451989B2 JPH0451989B2 JP57020337A JP2033782A JPH0451989B2 JP H0451989 B2 JPH0451989 B2 JP H0451989B2 JP 57020337 A JP57020337 A JP 57020337A JP 2033782 A JP2033782 A JP 2033782A JP H0451989 B2 JPH0451989 B2 JP H0451989B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- ingaasp
- inp
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000031700 light absorption Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 7
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は受光素子、特に長波長（波長1μm以
上）帯光通信用受光素子として開発されている
InP／InGaAsPなどの−族化合物半導体を用
いたアバランシエ・フオトダイオード（APD）
の構造に関する。[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention has been developed as a light-receiving element, particularly as a light-receiving element for long wavelength (wavelength of 1 μm or more) optical communication.
Avalanche photodiode (APD) using − group compound semiconductors such as InP/InGaAsP
Regarding the structure of
(b) 従来技術と問題点
近年、例えば1μm帯受光素子として、
InGaAsPを光吸収層とし、InPを増倍層とするヘ
テロ構造のInP／InGaAsPからなるアバランシ
エ・フオトダイオードが盛んに研究開発されてい
る。しかし、このフオトダイオードの過剰雑音の
大きさを決めうInP増倍層内での正孔と電子のイ
オン化率の比β／αは精々２倍程度であり、構造
上の制限のために雑音をある値以下に低減させる
ことができない問題がある。第１図にこのような
InP／InGaAsPフオトダイオードの一例の断面構
造図を示しており、１がn+型InP基板、２はｎ型
InGaAsP光吸収挿、８はｎ型InP増倍層、４はｐ
型InP層を示す。(b) Conventional technology and problems In recent years, for example, as a 1 μm band photodetector,
InP/InGaAsP heterostructure avalanche photodiodes, which have InGaAsP as a light absorption layer and InP as a multiplication layer, are being actively researched and developed. However, the ratio β/α of the ionization rate of holes and electrons in the InP multiplication layer, which determines the amount of excess noise in this photodiode, is at most twice as large, and due to structural limitations, the noise There is a problem that cannot be reduced below a certain value. Figure 1 shows something like this.
A cross-sectional structure diagram of an example of an InP/InGaAsP photodiode is shown. 1 is an n + type InP substrate, 2 is an n type
InGaAsP light absorption layer, 8 is n-type InP multiplication layer, 4 is p
The type InP layer is shown.
また、上記のフオトダイオードだけではなく、
GaAlSb／GaSbからなるフオトダイオードにお
いても、同様にイオン化率の比は１に近く、光通
信用の低雑音素子の要求を満たすことができな
い。 In addition to the photodiode mentioned above,
Similarly, in a photodiode made of GaAlSb/GaSb, the ratio of ionization rates is close to 1 and cannot meet the requirements for a low-noise element for optical communication.
(c) 発明の目的
本発明はこの様な受光素子のＳ／Ｎ比を改善す
ることを目的とするもので、そのため増倍層内で
のイオン化率の比を増大させる構造の受光素子を
提案するものである。(c) Purpose of the Invention The purpose of the present invention is to improve the S/N ratio of such a light receiving element, and therefore proposes a light receiving element having a structure that increases the ratio of ionization rates within the multiplication layer. It is something to do.
(d) 発明の構成
このような目的は、一導電型半導体基板１上に
バンドギヤツプEg1をもつ一導電型半導体層２光
吸収層）が設けられ、その上にバンドギヤツプ
Eg1＜Eg2となるバンドギヤツプEg2もつ一導電型
半導体層３（増倍層）が設けられ、その上にバン
ドギヤツプEg1＜Eg3＜Eg2となるバンドギヤツプ
Eg3を有し、多数キヤリヤの平均自由行程より短
かい層幅をもち、且つ、少数キヤリヤのイオン化
率が前記増倍層のイオン化率より大きい一導電型
半導体層５が設けられて、更にその上に反対導電
型半導体層４が設けられた半導体受光素子によつ
て達成させることができる。(d) Structure of the Invention Such an object is to provide a semiconductor substrate 1 of one conductivity type with a semiconductor layer 2 of one conductivity type (light absorbing layer) having a band gap E g1 , and a semiconductor layer 2 of one conductivity type with a band gap E g1 on top of which a band gap
A one-conductivity type semiconductor layer 3 (multiplier layer) having a band gap E g2 such that E g1 <E g2 is provided, and a band gap such that E g1 <E g3 <E g2 is provided thereon.
E g3 , a layer width shorter than the mean free path of the majority carriers, and a semiconductor layer 5 of one conductivity type in which the ionization rate of the minority carriers is higher than the ionization rate of the multiplication layer, and This can be achieved by a semiconductor light-receiving element on which a semiconductor layer 4 of opposite conductivity type is provided.
(e) 発明の実施例
第２図は本発明にかゝる一実施例のInP／
InGaAsPフオトダイオードの構造を示す。n+型
InP基板１上にｎ型InGaAsP光吸収層２、ｎ型
InP増倍層３をエピタキシヤル成長したその上に
n-型InGaAsP層５を更にエピタキシヤル成長さ
せた構造である。ｎ型InGaAsP光吸収層２はエ
ネルギーギヤツプEg1＝0.92ev、キヤリヤ濃度ｎ＝
１×1016cm-3、膜厚2μm、ｎ型InP増倍層３はEg2
＝1.35ev、ｎ＝１×1016cm-3、膜厚1μm、n-型
InGaAsP５はEg3＝1.1ev、n-＝５×1015cm-3、膜
厚0.3μmである。最上層のp+型InP層４はキヤリ
ヤ濃度P+＝1018cm-3以上、膜厚1μmとし、これは
エピタキシヤル成長で形成してもよいし、又カド
ミウム（Cd）を拡散して形成してもよい。６は
金・亜鉛（Au−Zn）で成長したｐ−電極、７は
金・ゲルマニウム（Au−Ge）で形成したｎ−電
極で、周囲がメサエツチされたメサ型ダイオード
である。(e) Embodiment of the invention FIG. 2 shows an InP/
The structure of an InGaAsP photodiode is shown. n + type
n-type InGaAsP light absorption layer 2 on InP substrate 1, n-type
On top of which the InP multiplication layer 3 is epitaxially grown.
This is a structure in which an n - type InGaAsP layer 5 is further epitaxially grown. The n-type InGaAsP light absorption layer 2 has an energy gap E g1 =0.92 ev and a carrier concentration n=
1×10 16 cm -3 , film thickness 2 μm, n-type InP multiplication layer 3 is Eg 2
= 1.35 ev , n = 1×10 16 cm -3 , film thickness 1 μm, n - type
InGaAsP5 has E g3 =1.1 ev , n − =5×10 15 cm −3 , and film thickness 0.3 μm. The uppermost p + type InP layer 4 has a carrier concentration P + =10 18 cm -3 or more and a film thickness of 1 μm, and may be formed by epitaxial growth or by diffusing cadmium (Cd). You may. 6 is a p-electrode grown from gold and zinc (Au-Zn), and 7 is an n-electrode formed from gold and germanium (Au-Ge), which is a mesa-type diode whose periphery is mesa-etched.
このようなフオトダイオードにおいて、プレー
トダウン近傍の逆バイアス電圧を加えた時の電界
分布図表を第３図に示す。縦軸は電界で、横軸に
pn接合からの距離を示しており、波長1.3μmの光
を入射するとEg1＝0.92evをもつｎ型InGaAsP層
２で光が吸収されて、電子・正孔対が発生し、少
数キヤリヤの正孔が高電界領域へ向つて走行す
る。 FIG. 3 shows an electric field distribution chart when a reverse bias voltage near the plate down is applied to such a photodiode. The vertical axis is the electric field, and the horizontal axis is
The distance from the p-n junction is shown. When light with a wavelength of 1.3 μm is incident, the light is absorbed by the n-type InGaAsP layer 2 with E g1 = 0.92 ev , electron-hole pairs are generated, and the minority carrier positive The hole runs towards the high field region.
こゝで、ｎ型InP増倍層３およびn-InGaAsP層
５中での多数キヤリヤの電子のイオン化率をそれ
ぞれα3，α5とし、正孔のイオン化率をそれぞれ
β3，β5として、電界に対するそれらの値を第４図
に示している。この図表から、n-型InGaAsP層
５中でのイオン化率α5，β5はｎ型InP層３中での
イオン化率α3，β3より大きく、電子のイオン化率
は約４倍、正孔のイオン化率は約３倍であること
が判る。このように、n-型InGaAsP層５中でイ
オン化率が大きくなるのは、キヤリヤがイオン化
するに必要なしきい値エネルギーξiがバンドギヤ
ツプにほゞ比例して小さくなり、イオン化率が
ρ-a〓i（但しａは常数）に比例するからである。 Here, the ionization rates of majority carrier electrons in the n-type InP multiplication layer 3 and n - InGaAsP layer 5 are α 3 and α 5 , respectively, and the ionization rates of holes are β 3 and β 5 , respectively. Their values versus electric field are shown in FIG. From this chart, the ionization rates α 5 , β 5 in the n - type InGaAsP layer 5 are larger than the ionization rates α 3 , β 3 in the n-type InP layer 3, and the ionization rate of electrons is about 4 times higher than that of holes. It can be seen that the ionization rate is about 3 times higher. In this way, the ionization rate increases in the n - type InGaAsP layer 5 because the threshold energy ξi required for carrier ionization decreases approximately in proportion to the band gap, and the ionization rate increases as ρ -a 〓 i (However, a is a constant).
さて、高電界領域に正孔に入ると、ｎ型InP層
３内の電界が十分に高いので、この層中である程
度の割合でイオン化して増倍された正孔がn-型
InGaAsP層５に入る。このとき、両層のInP／
InGaAsP界面をよぎる正孔のもつ平均的エネル
ギーはｎ型InP層３中の正孔のしきい値エネルギ
ーξh iIoP＝1.6evの約半分即ち0.8ev程度となつてい
る。一方、n-型InGaAsP層５中の正孔のしきい
値エネルギーξh iIoGaAsPは約1.4evであるが、正孔は
すでに0.8evをもつて、ｎ型InP層３からn-型
InGaAsP層に入つてくるので、n-型InGaAsP層
５中での実効的なしきい値エネルギーは1.4ev−
0.8ev＝0.6evとなつて、このしきい値エネルギー
から決まる正孔のイオン化率は著しく高くなり、
一般のInGaAsP層中の正孔のイオン化率の約10
倍になる。したがつて、n-型InGaAsP層５を膜
厚0.8μmとうすくしても、正孔はその層中を走行
する過程で、必ずイオン化されて電子・正孔対を
発生する。 Now, when a hole enters the high electric field region, the electric field in the n-type InP layer 3 is sufficiently high, so that the hole is ionized and multiplied at a certain rate in this layer, and becomes n - type.
Enters the InGaAsP layer 5. At this time, InP/
The average energy of holes crossing the InGaAsP interface is about half of the threshold energy ξ h iIoP =1.6 ev of holes in the n-type InP layer 3, that is, about 0.8 ev . On the other hand, the threshold energy ξ h iIoGaAsP of the hole in the n - type InGaAsP layer 5 is about 1.4 ev , but the hole already has 0.8 ev and is transferred from the n - type InP layer 3 to the n - type
Since it enters the InGaAsP layer, the effective threshold energy in the n - type InGaAsP layer 5 is 1.4 ev −
0.8 ev = 0.6 ev , and the hole ionization rate determined by this threshold energy becomes significantly high.
Approximately 10% of the hole ionization rate in a general InGaAsP layer
Double. Therefore, even if the n - type InGaAsP layer 5 is made as thin as 0.8 μm, holes are always ionized and generate electron-hole pairs while traveling through the layer.
ところが、そのn-型InGaAsP層５で作られる
電子は、そのイオン化率が約２×104cm-1（第４
図参照）という値であり、電子イオン化をおこす
ための平均自由行程1/2×104cm＝0.5μmより、n-
型InGaAsP層の膜厚（0.3μm）がうすいため、n-
型InGaAsP層５中では殆んどイオン化されずに、
ｎ型InP層３に入る。ｎ型InP層３中ではそのイ
オン化率は更に小さいので、ｎ型InP層３を通過
中にイオン化をおこす確率は小さい。 However, the ionization rate of the electrons created in the n - type InGaAsP layer 5 is approximately 2 × 10 4 cm -1 (4th
(see figure), and from the mean free path for electron ionization 1/2 x 10 4 cm = 0.5 μm, n -
Since the thickness of the type InGaAsP layer (0.3 μm) is thin, n -
Almost no ionization occurs in the type InGaAsP layer 5,
It enters the n-type InP layer 3. Since the ionization rate is even lower in the n-type InP layer 3, the probability of ionization occurring while passing through the n-type InP layer 3 is small.
このようにして、本発明にかゝる薄いn-型
InGaAsP層を設けると、この層がない従来の場
合に比べて正孔のイオン化率は非常に大きくな
る。今、アバランシエ領域幅は、約半分がn-型
InGaAsP層、他の半分がｎ型InP層にあるとする
と、正孔のイオン化率はｎ型InP層中のβ3とn-型
InGaAsP層中のβ5との算術平均となる。しかし、
第４図の図表で説明したようにβ53β3であるか
らβ3＋β5／２β3＋3β3／２2β3となるが、更に
上記の
ようにｎ型InP層からn-型InGaAsP層に入る正孔
の見かけ上のイオン化率は約10倍という大きな値
となるため、実効的に正孔のイオン化率は2β3以
上となる。このような考察の下に、本発明にかゝ
る構造を作成したところ、増倍層内での正孔と電
子のイオン化率の比β／αは第１図に示す従来の
構造が２倍程度であつたのに対して、実験結果に
よれば本発明による構造が４倍以上となつている
ことが解つた。 In this way, thin n - type
When the InGaAsP layer is provided, the hole ionization rate is much higher than in the conventional case without this layer. Now, about half of the avalanche region width is n - type
Assuming that the InGaAsP layer and the other half are in the n-type InP layer, the hole ionization rate is β 3 in the n-type InP layer and n - type
It is the arithmetic mean of β 5 in the InGaAsP layer. but,
As explained in the diagram of Figure 4, since β 5 3β 3 becomes β 3 +β 5 /2β 3 +3β 3 /22β 3 , it also goes from the n-type InP layer to the n - type InGaAsP layer as described above. Since the apparent ionization rate of holes is about 10 times as large, the effective ionization rate of holes is 2β 3 or more. Based on these considerations, we created a structure according to the present invention, and found that the ratio β/α of the ionization rate of holes and electrons in the multiplication layer was twice that of the conventional structure shown in Figure 1. However, according to the experimental results, it was found that the structure according to the present invention had an increase of more than 4 times.
また、第５図はGaAlSb／GaSbからなるフオ
トダイオードに本発明を適用した実施例で、従来
のｎ型GaAlSb増倍層（バンドギヤツプEg4）８
に本発明のn-型GaAlSb（バンドギヤツプEg5）９
を付加シテ、Eg5＜Eg4とすると、同様にイオン化
率の比β／αが増大する。 FIG. 5 shows an embodiment in which the present invention is applied to a photodiode made of GaAlSb/GaSb, and shows a conventional n-type GaAlSb multiplication layer (band gap E g4 )8.
The present invention's n -type GaAlSb (band gap E g5 )9
When E g5 <E g4 is added, the ionization rate ratio β/α similarly increases.
(f) 発明の効果
以上の説明から判るように、本発明によればバ
ンドギヤツプの狭い層中で、片方のキヤリヤのみ
イオン化をおこし、しかもそのイオン化率が従来
の増倍層より大きくなるため、受光素子全体のイ
オン化率の比を大きくすことができる。(f) Effects of the Invention As can be seen from the above explanation, according to the present invention, only one carrier is ionized in the narrow layer of the bandgap, and the ionization rate is higher than that of the conventional multiplication layer, so the light reception is The ionization rate ratio of the entire device can be increased.
従つて、本発明はアバランシエ増倍に伴なうキ
ヤリヤのゆらぎを少くして、過剰雑音を低くする
効果が大きく、受光感度の工場に極めて寄与する
新規な構造である。 Therefore, the present invention is a novel structure that is highly effective in reducing carrier fluctuations caused by avalanche multiplication and lowering excess noise, and greatly contributes to the production of light-receiving sensitivity.
第１図は従来のInP／InGaAsP受光素子の構造
断面図、第２図は本発明にかゝるInP／InGaAsP
受光素子の構造断面図、第３図は電界分布図表、
第４図はイオン化率と電界との関係図表、第５図
は本発明にかゝる他の実施例の構造断面図であ
る。
図中、１はn+型InP基板、２はｎ型InGaAsP吸
収層、３はｎ型InP増倍層、４はｐ型InP層、５
はn-型InGaAsP層、６はｐ−電極、７はｎ−電
極を示す。
Figure 1 is a cross-sectional view of the structure of a conventional InP/InGaAsP photodetector, and Figure 2 is an InP/InGaAsP photodetector according to the present invention.
A cross-sectional view of the structure of the light-receiving element, Figure 3 is an electric field distribution chart,
FIG. 4 is a graph showing the relationship between ionization rate and electric field, and FIG. 5 is a structural sectional view of another embodiment according to the present invention. In the figure, 1 is an n + type InP substrate, 2 is an n-type InGaAsP absorption layer, 3 is an n-type InP multiplication layer, 4 is a p-type InP layer, 5
indicates an n - type InGaAsP layer, 6 indicates a p-electrode, and 7 indicates an n-electrode.
Claims (1)
Eg1をもつ一導電型半導体層２からなる光吸収層
と、その上に設けられたバンドギヤツプEg1より
大きなバンドギヤツプEg2をもつ一導電型半導体
層３からなる増倍層と、その上に設けられEg1＜
Eg3＜Eg2となるバンドギヤツプEg3を有し、多数
キヤリヤの平均自由工程より短かい幅層をもち、
且つ、少数キヤリヤのイオン化率が前記増倍層の
イオン化率より大きい一導電型半導体層５と、更
にその上に設けられた反対導電型半導体層４とを
具備することを特徴とする半導体受光素子。1 Band gap on one conductivity type semiconductor substrate 1
A light absorption layer consisting of a semiconductor layer 2 of one conductivity type having E g1 , a multiplication layer formed of a semiconductor layer 3 of one conductivity type having a band gap E g2 larger than the band gap E g1 provided thereon, E g1 ＜
It has a band gap E g3 such that E g3 < E g2 , and has a width layer shorter than the mean free path of the majority carrier,
A semiconductor light receiving element comprising a semiconductor layer 5 of one conductivity type in which the ionization rate of minority carriers is higher than the ionization rate of the multiplication layer, and a semiconductor layer 4 of an opposite conductivity type provided thereon. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57020337A JPS58138082A (en) | 1982-02-10 | 1982-02-10 | Semiconductor light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57020337A JPS58138082A (en) | 1982-02-10 | 1982-02-10 | Semiconductor light-receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58138082A JPS58138082A (en) | 1983-08-16 |
| JPH0451989B2 true JPH0451989B2 (en) | 1992-08-20 |
Family
ID=12024319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57020337A Granted JPS58138082A (en) | 1982-02-10 | 1982-02-10 | Semiconductor light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58138082A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
-
1982
- 1982-02-10 JP JP57020337A patent/JPS58138082A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58138082A (en) | 1983-08-16 |
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