JPH0451073B2 - - Google Patents

Info

Publication number: JPH0451073B2
Authority: JP; Japan
Prior art keywords: layer; semiconductor; intermediate member; semiconductor laser; group
Prior art date: 1984-01-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP1182884A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60157284A (ja

Inventor

Yasutoshi Kurihara

Tadashi Minagawa

Komei Yatsuno

Kazuhiro Hirose

Koichi Shinohara

Tomiro Yasuda

Mamoru Sawahata

Tadao Kushima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-01-27

Filing date

1984-01-27

Publication date

1992-08-18

1984-01-27 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1984-01-27 Priority to JP59011828A priority Critical patent/JPS60157284A/ja

1985-08-17 Publication of JPS60157284A publication Critical patent/JPS60157284A/ja

1992-08-18 Publication of JPH0451073B2 publication Critical patent/JPH0451073B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 66
239000000463 material Substances 0.000 claims description 28
238000005219 brazing Methods 0.000 claims description 14
239000002184 metal Substances 0.000 claims description 14
229910052751 metal Inorganic materials 0.000 claims description 14
229910052737 gold Inorganic materials 0.000 claims description 5
229910052709 silver Inorganic materials 0.000 claims description 5
229910052782 aluminium Inorganic materials 0.000 claims description 4
239000000919 ceramic Substances 0.000 claims description 4
229910052802 copper Inorganic materials 0.000 claims description 4
238000001465 metallisation Methods 0.000 claims description 4
229910052750 molybdenum Inorganic materials 0.000 claims description 4
229910052759 nickel Inorganic materials 0.000 claims description 4
229910052697 platinum Inorganic materials 0.000 claims description 4
229910052719 titanium Inorganic materials 0.000 claims description 4
229910052804 chromium Inorganic materials 0.000 claims description 3
229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
239000011651 chromium Substances 0.000 claims description 2
239000012212 insulator Substances 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052721 tungsten Inorganic materials 0.000 claims description 2
239000010410 layer Substances 0.000 description 33
239000000758 substrate Substances 0.000 description 20
239000010931 gold Substances 0.000 description 6
229910000679 solder Inorganic materials 0.000 description 6
230000003287 optical effect Effects 0.000 description 5
230000010355 oscillation Effects 0.000 description 5
238000010586 diagram Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000000945 filler Substances 0.000 description 4
239000010949 copper Substances 0.000 description 3
230000005855 radiation Effects 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
-1 GaAs Chemical class 0.000 description 2
229910020220 Pb—Sn Inorganic materials 0.000 description 2
239000012790 adhesive layer Substances 0.000 description 2
239000000969 carrier Substances 0.000 description 2
230000008859 change Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
230000017525 heat dissipation Effects 0.000 description 2
230000020169 heat generation Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000000034 method Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
229910017401 Au—Ge Inorganic materials 0.000 description 1
229910015365 Au—Si Inorganic materials 0.000 description 1
229910015363 Au—Sn Inorganic materials 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
230000003993 interaction Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
239000013307 optical fiber Substances 0.000 description 1
230000008569 process Effects 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
238000005476 soldering Methods 0.000 description 1
230000008961 swelling Effects 0.000 description 1
230000008646 thermal stress Effects 0.000 description 1
239000010936 titanium Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Die Bonding (AREA)
Led Device Packages (AREA)
Semiconductor Lasers (AREA)

JP59011828A 1984-01-27 1984-01-27 半導体装置 Granted JPS60157284A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59011828A JPS60157284A (ja)	1984-01-27	1984-01-27	半導体装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59011828A JPS60157284A (ja)	1984-01-27	1984-01-27	半導体装置

Publications (2)

Publication Number	Publication Date
JPS60157284A JPS60157284A (ja)	1985-08-17
JPH0451073B2 true JPH0451073B2 (nl)	1992-08-18

Family

ID=11788622

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59011828A Granted JPS60157284A (ja)	1984-01-27	1984-01-27	半導体装置

Country Status (1)

Country	Link
JP (1)	JPS60157284A (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63132495A (ja) *	1986-11-21	1988-06-04	Mitsubishi Electric Corp	光半導体素子用サブマウント
JPS63160292A (ja) *	1986-12-23	1988-07-04	Mitsubishi Electric Corp	光半導体素子用サブマウント
JP4855341B2 (ja) *	2007-06-05	2012-01-18	株式会社パイロットコーポレーション	ノック式筆記具
JP2009272656A (ja) *	2009-08-20	2009-11-19	Sumitomo Electric Ind Ltd	半導体発光素子及びその製造方法
EP2835882B1 (en) *	2012-04-05	2017-07-05	Panasonic Intellectual Property Management Co., Ltd.	Semiconductor laser apparatus and method for manufacturing same
JP2022115377A (ja)	2021-01-28	2022-08-09	ゼブラ株式会社	出没式筆記具

1984
- 1984-01-27 JP JP59011828A patent/JPS60157284A/ja active Granted

Also Published As

Publication number	Publication date
JPS60157284A (ja)	1985-08-17

Publication	Publication Date	Title
JP2001168442A (ja)	2001-06-22	半導体レーザ素子の製造方法、配設基板および支持基板
JP2016054279A (ja)	2016-04-14	半導体レーザ
JP2003101113A (ja)	2003-04-04	窒化物半導体レーザ装置
JP4811629B2 (ja)	2011-11-09	半導体レーザ装置
US20190067161A1 (en)	2019-02-28	Semiconductor laser module and method for manufacturing the same
US6621839B1 (en)	2003-09-16	Method for contacting a high-power diode laser bar and a high-power diode laser bar-contact arrangement of electrical contacts with minor thermal function
JPH0750813B2 (ja)	1995-05-31	半導体レーザ素子用サブマウント
JP5031136B2 (ja)	2012-09-19	半導体レーザ装置
JPH0451073B2 (nl)	1992-08-18
JP3912130B2 (ja)	2007-05-09	サブマウント
US6870866B2 (en)	2005-03-22	Powerpack laser diode assemblies
JPS60211992A (ja)	1985-10-24	半導体レ−ザ装置
JP2001230498A (ja)	2001-08-24	Ｉｉｉ族窒化物系化合物半導体レーザ
JPH10308560A (ja)	1998-11-17	半導体発光素子および発光装置
JPH0637403A (ja)	1994-02-10	半導体レーザ装置
JP2005101149A (ja)	2005-04-14	半導体発光装置及びその製造方法
JP2018113377A (ja)	2018-07-19	レーザー光源装置
JPH06188516A (ja)	1994-07-08	光半導体装置およびその製造方法
JPS63132495A (ja)	1988-06-04	光半導体素子用サブマウント
JPH01138777A (ja)	1989-05-31	光半導体素子用サブマウント
JPH1022570A (ja)	1998-01-23	窒化物半導体レーザ素子
JP2529397B2 (ja)	1996-08-28	チップ部品載置用電極
JPS60110185A (ja)	1985-06-15	光集積回路パッケ−ジ
JPH04283948A (ja)	1992-10-08	光半導体素子用サブマウント
JPH01134983A (ja)	1989-05-26	光半導体素子用サブマウント