JPH0445417A - Light beam reflecting mirror - Google Patents
Light beam reflecting mirrorInfo
- Publication number
- JPH0445417A JPH0445417A JP2154262A JP15426290A JPH0445417A JP H0445417 A JPH0445417 A JP H0445417A JP 2154262 A JP2154262 A JP 2154262A JP 15426290 A JP15426290 A JP 15426290A JP H0445417 A JPH0445417 A JP H0445417A
- Authority
- JP
- Japan
- Prior art keywords
- reflecting mirror
- light
- curved
- angle
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 4
- 230000005469 synchrotron radiation Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
X線なとの光を曲面反射鏡により所定位置へ正確に反射
させる光線反射鏡に関し、
反射光エネルギーを有効に利用するため使用する曲面反
射鏡の入射角を正確に設定できる光線反射鏡を提供する
ことを目的とし、
曲面反射鏡に併有させた光軸合わせ用の平面反射鏡と、
該平面反射鏡からの反射光を検出する検出器と、前記曲
面反射鏡への入射角度を所定値に変化させ、且つ曲面反
射鏡の位置を移動させる移動部とて構成する。[Detailed Description of the Invention] [Summary] Regarding a light beam reflector that accurately reflects light such as X-rays to a predetermined position using a curved reflector, the incident angle of the curved reflector used to effectively utilize reflected light energy The purpose of this project is to provide a light beam reflector that can accurately set the angle of light, and a flat reflector for optical axis alignment combined with a curved reflector.
It is comprised of a detector that detects the reflected light from the flat reflecting mirror, and a moving unit that changes the angle of incidence on the curved reflecting mirror to a predetermined value and moves the position of the curved reflecting mirror.
本発明はX線などの光を曲面反射鏡により所定位置へ正
確に反射させる光線反射鏡に関する。The present invention relates to a light reflecting mirror that accurately reflects light such as X-rays to a predetermined position using a curved reflecting mirror.
超LSIの製造工程においてサブミクロン加工技術が必
要となり、SOR光のように大きな強度で平行性に優れ
た光線からX線露光に最適な波長帯を取り出し、より高
強度の光線を得るため反射鏡を使用しているが、入射角
が異なると同一光源からのX線であっても反射X線の強
度の異なることが判った。所定の反射X線の強度を容易
に得る技術を開発することか要望された。In the manufacturing process of VLSI, submicron processing technology is required, and in order to extract the optimal wavelength band for X-ray exposure from light rays with high intensity and excellent parallelism such as SOR light, and to obtain higher intensity light rays, reflector mirrors are used. However, it was found that the intensity of reflected X-rays differs even if the X-rays are from the same light source when the incident angle is different. There was a request to develop a technique to easily obtain a predetermined intensity of reflected X-rays.
X線を使用する超LSIの製造装置について、第5図に
その概略を示す。第5図において、1はSOR(シンク
ロトロン放射光)の光源、2はSOR光、3は反射鏡、
4は露光室、5は半導体ウェーハ、6はレジストを示す
。SOR光2は磁場中で円運動している電子がその求心
加速度により放射する電磁波であって、ホトレジスト6
に照射するため使用する場合は、反射鏡3で反射させベ
リリウムを通過させるなどにより軟X線と呼ばれるX線
露光に最適なものを取り出し使用する。露光室4におけ
る半導体ウェーハ5上のレジスト6に対し軟X線−3O
R光2を照射し、サブミクロン単位でパターンを形成す
ることを5OR−X線リソグラフィ技術という。このと
き露光時間をより短縮するため、集光鏡を使用する。集
光鏡として実際には反射鏡3を使用している。第6図に
示すように反射鏡3による反射を考える。SOR光2が
反射鏡3に対し入射角θで入射するとき、法線7に対し
対称的に反射角θで反射し、反射光8となる。このとき
露光に最適な波長よりも短い波長のSOR光は透過し透
過光9と示す方向に進む。FIG. 5 shows an outline of a VLSI manufacturing apparatus using X-rays. In Fig. 5, 1 is a light source of SOR (synchrotron radiation), 2 is SOR light, 3 is a reflecting mirror,
4 is an exposure chamber, 5 is a semiconductor wafer, and 6 is a resist. The SOR light 2 is an electromagnetic wave emitted by electrons moving circularly in a magnetic field due to their centripetal acceleration.
When using the soft X-rays for irradiation, the most suitable for X-ray exposure, called soft X-rays, is extracted and used by reflecting it with the reflecting mirror 3 and passing it through beryllium. Soft X-rays -3O are applied to the resist 6 on the semiconductor wafer 5 in the exposure chamber 4.
Forming a pattern in submicron units by irradiating R light 2 is called 5OR-X-ray lithography technology. At this time, a condensing mirror is used to further shorten the exposure time. A reflecting mirror 3 is actually used as a condensing mirror. Consider the reflection by the reflecting mirror 3 as shown in FIG. When the SOR light 2 is incident on the reflecting mirror 3 at an incident angle θ, it is reflected symmetrically with respect to the normal 7 at a reflection angle θ, and becomes reflected light 8 . At this time, the SOR light having a wavelength shorter than the optimum wavelength for exposure is transmitted and proceeds in the direction shown as transmitted light 9.
レジスト6に吸収されるSOR光2の強度を変えること
と、SOR光2の中から不要な光を反射光として利用し
ないことのために、反射鏡3を使用する。このとき反射
鏡3としては平面鏡以外に曲面鏡を使用することも行わ
れている。それは曲面鏡により光線を収束し、強度を大
きくすることか出来るからである。A reflecting mirror 3 is used to change the intensity of the SOR light 2 absorbed by the resist 6 and to prevent unnecessary light from the SOR light 2 from being used as reflected light. At this time, as the reflecting mirror 3, a curved mirror is also used in addition to a plane mirror. This is because a curved mirror can converge light rays and increase their intensity.
第7図に示すように、従来の構成ではSOR光2の代わ
りにSOR光20を使用し、反射鏡3における反射点R
2かR2゜どなっても、レジスト6に到達する位置P、
か同一という場合がある。この場合反射光11によりレ
ジスト6に与えられるエネルギーと、反射光12による
ものとは、入射光θ2と01が異なるので、得られる効
果が異なることとなった。特に反射鏡か平面でなく曲面
状の場合は入射角の調整を正確に行うことか困難であっ
た。それは曲面反射鏡は反射面が光軸の左右方向以外に
、前後にも曲がっているから、入射角が僅かに異なって
も、反射角か大きく変化するためである。As shown in FIG. 7, in the conventional configuration, the SOR light 20 is used instead of the SOR light 2, and the reflection point R on the reflecting mirror 3 is used.
2 or R2° No matter what happens, the position P that reaches the resist 6,
In some cases, they are the same. In this case, the energy given to the resist 6 by the reflected light 11 and the energy given to the resist 6 by the reflected light 12 differed in the incident light θ2 and 01, so the obtained effects were different. In particular, when the reflecting mirror is curved rather than flat, it is difficult to adjust the angle of incidence accurately. This is because the reflecting surface of a curved reflecting mirror is curved not only in the left and right directions of the optical axis, but also in the front and back directions, so even if the incident angle differs slightly, the reflection angle will change significantly.
本発明の目的は前述の欠点を改善し、反射光エネルギー
を有効に利用するため使用する曲面反射鏡の入射角を正
確に設定できる光線反射鏡を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a light beam reflector that can correct the above-mentioned drawbacks and accurately set the incident angle of a curved reflector used to effectively utilize reflected light energy.
第1図は本発明の原理構成を示す図である。第1図にお
いて、13は本発明による光線反射鏡、14は反射鏡1
3の曲面反射鏡、15は反射鏡13の平面反射鏡、16
は反射光検出器、17は反射鏡13の移動部、18は入
射光、19は反射光、21は直接光を示す。FIG. 1 is a diagram showing the basic configuration of the present invention. In FIG. 1, 13 is a light reflecting mirror according to the present invention, and 14 is a reflecting mirror 1.
3 a curved reflecting mirror, 15 a flat reflecting mirror 13, 16
17 is a reflected light detector, 17 is a moving part of the reflecting mirror 13, 18 is incident light, 19 is reflected light, and 21 is direct light.
本発明は下記の構成としている。即ち、曲面反射鏡14
に併有させた光軸合わせ用の平面反射鏡15と、該平面
反射鏡15からの反射光を検出する検出器16と、前記
曲面反射鏡14への入射角度を所定値に変化させ、且つ
曲面反射鏡14の位置を移動させる移動部17とて構成
する。The present invention has the following configuration. That is, the curved reflecting mirror 14
a flat reflecting mirror 15 for optical axis alignment, a detector 16 for detecting the reflected light from the flat reflecting mirror 15, and a detector 16 for changing the angle of incidence on the curved reflecting mirror 14 to a predetermined value; It is constituted by a moving section 17 that moves the position of the curved reflecting mirror 14.
反射光検出器16は通常、半導体ウェーハなと光線を利
用する材料の置かれている場所と反射鏡13との間に配
置される。当初に、光線反射鏡13を調整して入射光1
8か平面反射鏡15の部分で反射して検出器16へ到達
させる。そのとき第2図に示すように、入射光18は平
面反射鏡15に到達するとき、入射光は若干の拡がりを
有しているから、検出器16上には平面反射鏡15に反
射されて26点にてきた像と、平面反射鏡15に反射さ
れない直接光21による23点での像か出来る。平面反
射鏡15による検出器16上てR4点の像が、平面反射
鏡15の傾きを調整するとき直接光21の23点と急速
に一致できる。これは入射光18か平面反射光15と平
行状態になったことを示す。露光に最適な波長帯が得ら
れる入射角は予め計算で求めであるから、その角度だけ
移動部17は平面反射鏡15を第2図に点線で示すよう
に傾斜させる。移動部17か平面反射鏡15を同時に予
定角度だけ傾斜させると、曲面反射鏡14も予定角度に
傾いているから、次に移動部17は入射光18が曲面反
射鏡14を照射する位置へ、平面反射鏡15と共に反射
鏡13の全体を移動する。そのとき曲面反射鏡14は平
面反射鏡15との位置関係が予め定まっているから、平
面反射鏡15による反射と対応付けのされた正確な反射
を行う。そのため曲面反射鏡14からの反射光は予定強
度で、図示しない利用材料へ到達できる。The reflected light detector 16 is typically placed between the reflective mirror 13 and a location where a material that uses light, such as a semiconductor wafer, is placed. Initially, the light reflecting mirror 13 is adjusted to reflect the incident light 1.
8 is reflected by the plane reflecting mirror 15 and reaches the detector 16. At that time, as shown in FIG. 2, when the incident light 18 reaches the plane reflecting mirror 15, the incident light has a slight spread, so that it is not reflected by the plane reflecting mirror 15 onto the detector 16. An image at 26 points and an image at 23 points due to the direct light 21 that is not reflected by the plane reflecting mirror 15 are formed. The image of the R4 point on the detector 16 by the plane reflecting mirror 15 can rapidly coincide with the 23 points of the direct light 21 when the inclination of the plane reflecting mirror 15 is adjusted. This indicates that the incident light 18 has become parallel to the plane reflected light 15. Since the angle of incidence at which the optimum wavelength band for exposure can be obtained is calculated in advance, the moving unit 17 tilts the plane reflecting mirror 15 by that angle as shown by the dotted line in FIG. When the moving part 17 or the flat reflecting mirror 15 are simultaneously tilted by the predetermined angle, the curved reflecting mirror 14 is also inclined by the intended angle, so the moving part 17 moves to a position where the incident light 18 irradiates the curved reflecting mirror 14. The entire reflecting mirror 13 is moved together with the plane reflecting mirror 15. At this time, since the positional relationship between the curved reflecting mirror 14 and the plane reflecting mirror 15 is determined in advance, the curved reflecting mirror 14 performs accurate reflection in correspondence with the reflection by the plane reflecting mirror 15. Therefore, the reflected light from the curved reflecting mirror 14 can reach the material to be used (not shown) at a predetermined intensity.
曲面反射鏡のみでは正確な入射角度の調整が出来なかっ
たけれど、本発明によれば曲面反射鏡に併有された平面
反射鏡により角度調整を正確に行うから、利用材料へ設
計通り反射光が到達する。It was not possible to accurately adjust the angle of incidence using only a curved reflector, but according to the present invention, the angle can be adjusted accurately using a flat reflector attached to a curved reflector, so that the reflected light can reach the material used as designed. reach.
第3図は本発明の実施例の構成を示す図である。 FIG. 3 is a diagram showing the configuration of an embodiment of the present invention.
第3図において15−1.15−2はそれぞれ平面反射
鏡であって、曲面反射鏡14の両側に設けたもの、17
は角度設定部・位置移動部を有するもので、角度測定用
ゴニオメータと、電動機などを組合せたもの、22はビ
ームラインで反射光を露光室4に導く管路、24は光選
択具で、例えば入射光のうち軟X線のみを透過させるベ
リリウム板などを示す。平面反射鏡15−1.15−2
は曲面反射鏡14の両側に設けられている。これは平面
反射鏡を片側のみに設けるより、両側に設けた方が製造
し易いことによる。光源lからのSOR光について、当
初は一方の平面反射鏡例えば15−1を入射光に対し移
動部17により略平行に傾けて、直接光と反射光を検出
器16により検出する。平面反射鏡15−1からの反射
光が検出器16で直接光と一致することを確かめてから
、次に平面反射鏡15−1への入射角が予定量となるよ
うに角度設定部17は平面反射鏡15−1を傾ける。次
に位置移動部17は平面反射鏡15−1の傾きを維持し
て、曲面反射鏡14・平面反射鏡15−2と共に、即ち
反射鏡全体を矢印で示−すように手前方向に移動させる
。平面反射鏡の平面と平行な水平方向である。光源1か
らの入射光18が曲面反射鏡I4により反射する位置に
おいて移動を停止する。必要に応じてビームライン22
の傾きを調節することか良い。このようにしてウェーハ
5のレジストに対し、図示しないマスクを使用し所定の
パターンを結像させることか出来る。In FIG. 3, 15-1 and 15-2 are plane reflecting mirrors, which are provided on both sides of the curved reflecting mirror 14, and 17.
2 has an angle setting part and a position moving part, and is a combination of an angle measuring goniometer and an electric motor, 22 is a beam line and a conduit that guides the reflected light to the exposure chamber 4, and 24 is a light selection tool, for example. This shows a beryllium plate that only transmits soft X-rays among incident light. Plane reflector 15-1.15-2
are provided on both sides of the curved reflecting mirror 14. This is because it is easier to manufacture if the plane reflecting mirror is provided on both sides rather than only on one side. Regarding the SOR light from the light source 1, initially one plane reflecting mirror, for example 15-1, is tilted approximately parallel to the incident light by the moving unit 17, and the direct light and reflected light are detected by the detector 16. After confirming that the reflected light from the plane reflecting mirror 15-1 matches the direct light at the detector 16, the angle setting unit 17 sets the incident angle to the plane reflecting mirror 15-1 to be the predetermined amount. Tilt the plane reflecting mirror 15-1. Next, the position moving unit 17 maintains the inclination of the flat reflective mirror 15-1 and moves the curved reflective mirror 14 and the flat reflective mirror 15-2, that is, the entire reflective mirror, toward the front as shown by the arrow. . This is the horizontal direction parallel to the plane of the plane reflector. The movement is stopped at a position where the incident light 18 from the light source 1 is reflected by the curved reflecting mirror I4. Beamline 22 if necessary
It is good to adjust the tilt of the screen. In this way, a predetermined pattern can be imaged onto the resist on the wafer 5 using a mask (not shown).
第4図は本発明の実施例として平面反射鏡15を、曲面
反射鏡14の裏面に設けた例を示す図である。この場合
は、第3図の場合と同様に平面反射鏡15の傾きを入射
光18と略一致させることを検出器により検出する。次
に角度設定部により平面反射鏡15(即ち、曲面反射鏡
14も一緒に)を所定角度だけ傾斜させる。そして位置
移動部により例えば上方に移動させ、入射光18か曲面
反射鏡14を照射するように調整する。FIG. 4 is a diagram showing an example in which a flat reflecting mirror 15 is provided on the back surface of the curved reflecting mirror 14 as an embodiment of the present invention. In this case, as in the case of FIG. 3, the detector detects that the inclination of the plane reflecting mirror 15 substantially coincides with the incident light 18. Next, the angle setting section tilts the plane reflecting mirror 15 (that is, the curved reflecting mirror 14 as well) by a predetermined angle. Then, it is moved, for example, upward by a position moving unit, and adjusted so that the incident light 18 illuminates the curved reflecting mirror 14.
反射X線の検出器は、蛍光板を使用すると、反射光検出
を直視することか出来て有効である。It is effective to use a fluorescent screen as a detector for reflected X-rays because it allows the detection of reflected light to be viewed directly.
検出器16は露光室内にあっても良い。また反射鏡と光
選択具24との間にあっても良い。X線を使用する場合
はウェーハ上のパターンとしてより細密なものか得られ
る。The detector 16 may be located within the exposure chamber. Further, it may be located between the reflecting mirror and the light selection tool 24. When using X-rays, a finer pattern can be obtained on the wafer.
このようにして本発明によると、曲面反射鏡により入射
光を反射させた光を有効に利用するとき、反射鏡への入
射角を予定角度に正確に設定するとことか容易に出来る
ので、利用材料において設計通りの光線強度を早期・簡
便に得ることが出来る。In this way, according to the present invention, when making effective use of the light reflected by the curved reflecting mirror, it is easy to accurately set the angle of incidence on the reflecting mirror to the planned angle, so that it is possible to easily set the incident angle to the intended angle. The designed light intensity can be obtained quickly and easily.
したかってX線リソグラフィ技術において、処理の均一
性か大いに向上するという効果を有する。Therefore, it has the effect of greatly improving processing uniformity in X-ray lithography technology.
第1図は本発明の原理構成を示す図、
第2図は第1図の動作説明図、
第3図・第4図は本発明の実施例の構成を示す図、第5
図は従来装置の概略を示す図、
第6図・第7図は第5図における反射鏡の反射を説明す
る図である。
13−光線反射鏡
14−・曲面反射鏡
15・・・平面反射鏡
16・−・反射光検出器
17・・−移動部
18・・・入射光
21・−・・直接光
9・・・・反射光
特許出願人 富士通株式会社
代 理 人 弁理士 鈴木栄祐
第1図
第2図
検出器
従来の装置
第5図
反射光の説明
反射光の説明
第7図FIG. 1 is a diagram showing the principle configuration of the present invention, FIG. 2 is an explanatory diagram of the operation of FIG. 1, FIGS. 3 and 4 are diagrams showing the configuration of an embodiment of the present invention, and FIG.
The figure is a diagram showing an outline of a conventional device, and FIGS. 6 and 7 are diagrams explaining the reflection of the reflecting mirror in FIG. 5. 13-Light beam reflecting mirror 14-・Curved reflecting mirror 15...Flat reflecting mirror 16...Reflected light detector 17...-Moving section 18...Incoming light 21...Direct light 9... Reflected light patent applicant Fujitsu Ltd. Agent Patent attorney Eisuke Suzuki Figure 1 Figure 2 Detector Conventional device Figure 5 Explanation of reflected light Explanation of reflected light Figure 7
Claims (1)
面反射鏡(15)と、 該平面反射鏡(15)からの反射光を検出する検出器(
16)と、 前記曲面反射鏡(14)への入射角度を所定値に変化さ
せ、且つ曲面反射鏡(14)の位置を移動させる移動部
(17)と、 て構成することを特徴とする光線反射鏡。 2、請求項第1項記載の平面反射鏡は、曲面反射鏡の片
側または両側に設け、移動部は曲面反射鏡からの反射光
を所定場所へ到達させるように平面反射鏡の平面と平行
な水平方向に移動も可能とする構成としたことを特徴と
する光線反射鏡。 3、請求項第1項記載の平面反射鏡は、曲面反射鏡の裏
面に設け、移動部は平面反射鏡による調整の後に、上下
に移動可能とする構成としたことを特徴とする光線反射
鏡。[Claims] 1. A flat reflecting mirror (15) for optical axis alignment, which is included in the curved reflecting mirror (14), and a detector (15) for detecting the reflected light from the flat reflecting mirror (15).
16); and a moving unit (17) that changes the angle of incidence on the curved reflector (14) to a predetermined value and moves the position of the curved reflector (14). Reflector. 2. The plane reflecting mirror according to claim 1 is provided on one or both sides of the curved reflecting mirror, and the moving part is parallel to the plane of the plane reflecting mirror so that the reflected light from the curved reflecting mirror reaches a predetermined place. A light reflecting mirror characterized by being configured to be movable in the horizontal direction. 3. A light reflecting mirror according to claim 1, wherein the plane reflecting mirror is provided on the back surface of the curved reflecting mirror, and the movable part is configured to be movable up and down after adjustment by the plane reflecting mirror. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2154262A JPH0445417A (en) | 1990-06-13 | 1990-06-13 | Light beam reflecting mirror |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2154262A JPH0445417A (en) | 1990-06-13 | 1990-06-13 | Light beam reflecting mirror |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0445417A true JPH0445417A (en) | 1992-02-14 |
Family
ID=15580344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2154262A Pending JPH0445417A (en) | 1990-06-13 | 1990-06-13 | Light beam reflecting mirror |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0445417A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0540178A2 (en) * | 1991-09-30 | 1993-05-05 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
WO2008010491A1 (en) * | 2006-07-18 | 2008-01-24 | Jtec Corporation | High precision posture control method of x-ray mirror |
-
1990
- 1990-06-13 JP JP2154262A patent/JPH0445417A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0540178A2 (en) * | 1991-09-30 | 1993-05-05 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
US5448612A (en) * | 1991-09-30 | 1995-09-05 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
WO2008010491A1 (en) * | 2006-07-18 | 2008-01-24 | Jtec Corporation | High precision posture control method of x-ray mirror |
JP2008026294A (en) * | 2006-07-18 | 2008-02-07 | J Tec:Kk | High-precision posture control method of x-ray mirror |
JP4557939B2 (en) * | 2006-07-18 | 2010-10-06 | 株式会社ジェイテック | X-ray mirror high-precision attitude control method and X-ray mirror |
US8000443B2 (en) | 2006-07-18 | 2011-08-16 | Jtec Corporation | High precision posture control method of X-ray mirror |
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