JPH0442916A - Electron beam aligner - Google Patents
Electron beam alignerInfo
- Publication number
- JPH0442916A JPH0442916A JP14784290A JP14784290A JPH0442916A JP H0442916 A JPH0442916 A JP H0442916A JP 14784290 A JP14784290 A JP 14784290A JP 14784290 A JP14784290 A JP 14784290A JP H0442916 A JPH0442916 A JP H0442916A
- Authority
- JP
- Japan
- Prior art keywords
- shaping
- electron beam
- shaping aperture
- lens
- dry plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 42
- 238000007493 shaping process Methods 0.000 claims abstract description 50
- 238000009826 distribution Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000007935 neutral effect Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体集積回路のフォトマスクを製造するた
めに用いられる可変整形ビーム形電子ビーム露光装置に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a variable shaped beam electron beam exposure apparatus used for manufacturing photomasks for semiconductor integrated circuits.
従来の技術
近年、フォトマスクの製造に電子ビーム冨光装置が広く
用いられるようになってきた。BACKGROUND OF THE INVENTION In recent years, electron beam enrichment devices have come to be widely used in the production of photomasks.
電子ビーム露光装置には、電子銃より発せられた電子ビ
ームをレンズにて集束し、マスク乾板に照射するスポッ
トビーム形と、レンズにて集束ｌまた電子ビームを整形
アパーチャと呼ばれるスリットを通過させることにより
、希望の大きさの矩形に電子ビームを整形することので
きる可変整形ビーム形とがある。マスクパターンの微細
化か進むにつれ、調整の容易な可変整形ビーム形電子ビ
ーム露光装置が有利になるものと予想される。Electron beam exposure equipment has a spot beam type in which the electron beam emitted from an electron gun is focused by a lens and irradiated onto a mask dry plate, and a type in which the electron beam is focused by a lens and passed through a slit called a shaping aperture. There is a variable shaping beam shape that can shape an electron beam into a rectangular shape of a desired size. As mask patterns become finer, it is expected that a variable shaped beam type electron beam exposure apparatus that can be easily adjusted will become advantageous.
第４図に、この可変整形型電子ビーム露光装置の電子光
学系の構成を示す。第４図に示すように、入射側から電
子銃１．照射レンズ２．第一整形アパーチャ３．整形偏
向器４．整形レンズ５．第２整形アパーチヤ６、縮小レ
ンズ７、投影レンズ８、位置決め偏向器９の順に配置さ
れ、その下方にビーム形状測定器１０．マスク乾板］１
か配置される。電子ビーム１２は上記光学系の中を通っ
てマスク乾板］１に結像する。電子銃】から放出した電
子線を照射レンズ２で集束し、第一整形アパーチャ３に
照射する。ここで矩形電子ビームが形成され、これを整
形偏向器４と整形レンズ５により第二整形アパーチャ６
上の任意の位置に結像させる。この結像位置を変えるこ
とで任意の太きさの矩形ビームを得ることができる。こ
の後、縮小レンズ７、投影レンズ８によりマスク乾板１
１上に結像される。また位置決め偏向器９により電子ビ
ーム１２をビーム形状測定器上に結像させ、ビームの形
状を測定することができる。FIG. 4 shows the configuration of the electron optical system of this variable shaping type electron beam exposure apparatus. As shown in FIG. 4, the electron gun 1. Irradiation lens 2. First shaping aperture 3. Shaping deflector 4. Orthopedic lenses5. A second shaping aperture 6, a reduction lens 7, a projection lens 8, and a positioning deflector 9 are arranged in this order, and a beam shape measuring device 10. Mask dry plate] 1
or placed. The electron beam 12 passes through the optical system and forms an image on the mask dry plate 1. An electron beam emitted from an electron gun is focused by an irradiation lens 2 and irradiated onto a first shaping aperture 3. Here, a rectangular electron beam is formed, which is transmitted to a second shaping aperture 6 by a shaping deflector 4 and a shaping lens 5.
Focus the image on any position above. By changing this imaging position, a rectangular beam of arbitrary thickness can be obtained. After that, the mask dry plate 1 is
The image is formed on 1. Further, the electron beam 12 is imaged on a beam shape measuring device by the positioning deflector 9, and the shape of the beam can be measured.
発明が解決しようとする課題
一般に可変整形ビーム形電子ビーム露光装置の場合、矩
形ビームの各辺は、それぞれマスク乾板上にマスクパタ
ーンを描画する際に設定される座標軸に平行である必要
がある。通常、整形アパーチャは手動またはモータによ
り回動し、矩形電子ビームの各辺が座標軸に平行になる
ようになっている。Problems to be Solved by the Invention Generally, in the case of a variable shaped beam type electron beam exposure apparatus, each side of the rectangular beam needs to be parallel to the coordinate axes set when drawing a mask pattern on a mask dry plate. Typically, the shaping aperture is rotated manually or by a motor so that each side of the rectangular electron beam is parallel to the coordinate axes.
従来の電子ビーム露光装置では、この整形アパーチャの
角度の調整は、マスク乾板にマスクパターンを描画し、
それを観察した上で行なっていた。In conventional electron beam exposure equipment, this adjustment of the shaping aperture angle involves drawing a mask pattern on a mask dry plate,
I did it after observing it.
このような方法では、整形アパーチャの角度の調整のた
めに、テストパターンを描画し、それを現像し顕微鏡に
て観察するという作業を何度も繰り返す必要があり、時
間がかかり電子ビーム露光装置の稼働率が低下するとい
う問題点があった。In this method, in order to adjust the angle of the shaping aperture, it is necessary to draw a test pattern, develop it, and observe it under a microscope, which is a process that is repeated many times, which is time consuming and slows down the electron beam exposure equipment. There was a problem that the operating rate decreased.
本発明は、このような問題点を解決するもので、整形ア
パーチャの角度調整に要する時間を短縮し、稼働率の高
い電子ビーム露光装置を提供することを目的とするもの
である。The present invention is intended to solve these problems, and aims to provide an electron beam exposure apparatus that reduces the time required to adjust the angle of a shaping aperture and has a high operating rate.
課題を解決するための手段
この目的を達成するために、本発明の電子ビーム露光装
置は、電子ビームの電流密度を最も平均化するように、
ビーム形状測定器の出力信号により作動するモータによ
り整形アパーチャを自動的に回動させ、短時間に電子ビ
ーム形状のツ整を行ない、装置の稼働率を高めるように
したものである。Means for Solving the Problems In order to achieve this object, the electron beam exposure apparatus of the present invention has the following features:
The shaping aperture is automatically rotated by a motor activated by the output signal of the beam shape measuring device, and the shape of the electron beam can be adjusted in a short time, thereby increasing the operating rate of the device.
作用
この構成によって、整形アパーチャの角度調節を自動的
に行ない角度調節に要する時間を大幅に短縮でき、電子
ビーム露光装置の稼働率を向上させることができる。Effect: With this configuration, the angle of the shaping aperture can be automatically adjusted, the time required for the angle adjustment can be significantly shortened, and the operating rate of the electron beam exposure apparatus can be improved.
実施例
以下に、本発明の一実施例について図面を参照しながら
説明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図に、本発明の一実施例の電子ビーム露光装置の電
子光学系の構成を示す。第２図に示すように、入射側か
ら電子銃１．照射レンズ２．第一整形アパーチャ３．整
形偏向器４．整形レンズ５、第二整形アパーチャ６、縮
小レンズ７、投影レンズ８１位置決め偏向器９の順に配
置され、その下方にビーム形状測定器１０．マスク乾板
１１が配置される。電子ビーム１２は上記光学系の中を
通って、マスク乾板１１上に結像する。これらの構成は
従来の電子ビーム露光装置と同じであるが、整形アパー
チャ回動用モータ１３とモータ制御回路部１４が付加さ
れている。以上のように構成された電子ビーム露光装置
について、以下にその動作を説明する。FIG. 1 shows the configuration of an electron optical system of an electron beam exposure apparatus according to an embodiment of the present invention. As shown in FIG. 2, the electron gun 1. Irradiation lens 2. First shaping aperture 3. Shaping deflector 4. A shaping lens 5, a second shaping aperture 6, a reduction lens 7, a projection lens 81 and a positioning deflector 9 are arranged in this order, and a beam shape measuring device 10. A mask dry plate 11 is arranged. The electron beam 12 passes through the optical system and forms an image on the mask drying plate 11. These configurations are the same as those of the conventional electron beam exposure apparatus, but a shaping aperture rotation motor 13 and a motor control circuit section 14 are added. The operation of the electron beam exposure apparatus configured as described above will be described below.
第２図は、ビーム形状測定器１０により測定された電子
ビームの電流密度分布波形を示す。この測定には電子ビ
ーム露光装置において通常に用いられる、ナイフェツジ
法を用いた。第２図（Ａ）は、整形アパーチャの角度が
正しく調整されている場合、第２図（Ｂ）は正しく調整
されていない場合を示す。整形アパーチャの角度が調整
不足の場合、第２図（Ｂ）のように電流密度分布が不均
一であるかのように測定される。整形アパーチャ３およ
びモータ１３により、その設計上の中立値を中心に８°
だけ回動できるようになっている。モータ制御用回路部
１４はビーム径１５よりも０．１μｍだけビームの内側
の部分の電流密度１６および１７を比較しその差が最も
小さくなるようにモータ１３を回動させる。このように
して整形アパーチャの角度を調整した後、マスク乾板上
にマスクパターンを描画し、観察することにより角度の
最終調整を行なう。第３図は、整形アパーチャを電子ビ
ーム露光装置にセットしてから、角度の調整が終了する
までに要した時間を示した図で、第３図（Ａ）は、従来
の電子ビーム露光装置の場合、第３図ＣＢ）は、本発明
の一実施例の電子ビーム露光装置の場合である。第３図
から明らかなように、本発明による電子ビーム露光装置
は、整形アパーチャの角度ｍ整に要する時間を約ノー／
２に短縮することが可能である。FIG. 2 shows the current density distribution waveform of the electron beam measured by the beam shape measuring device 10. For this measurement, the Knifezi method, which is commonly used in electron beam exposure equipment, was used. FIG. 2(A) shows a case where the angle of the shaping aperture is adjusted correctly, and FIG. 2(B) shows a case where it is not adjusted correctly. If the angle of the shaping aperture is insufficiently adjusted, the current density distribution will be measured as if it were non-uniform, as shown in FIG. 2(B). By shaping aperture 3 and motor 13, the angle of 8° is centered around its designed neutral value.
It is now possible to rotate only. The motor control circuit section 14 compares the current densities 16 and 17 at a portion inside the beam by 0.1 μm from the beam diameter 15, and rotates the motor 13 so that the difference is minimized. After adjusting the angle of the shaping aperture in this way, the final adjustment of the angle is performed by drawing a mask pattern on a mask dry plate and observing it. Figure 3 is a diagram showing the time required from setting the shaping aperture in the electron beam exposure apparatus to completing the angle adjustment. In this case, FIG. 3 CB) is the case of an electron beam exposure apparatus according to an embodiment of the present invention. As is clear from FIG. 3, the electron beam exposure apparatus according to the present invention takes approximately no.
It is possible to shorten it to 2.
発明の効果
本発明によれば、電子ビームの電流密度分布が最も均一
となるように、整形アパーチャを自動的に回動させるこ
Ｊ二により、整形アパーチャの角度調整に要する時間を
大幅に短縮でき、稼働率の高い電子ビーム露光装置を実
現できる。Effects of the Invention According to the present invention, by automatically rotating the shaping aperture so that the current density distribution of the electron beam becomes most uniform, the time required for adjusting the angle of the shaping aperture can be significantly reduced. , it is possible to realize an electron beam exposure apparatus with high availability.
第】図は本発明の一実施例の電子ビーム鉦光装置の電子
光学系の構成図、第２図（Ａ）はビーム形状測定器によ
り測定された整形アパーチャの角度が正しくｍ整されて
いる場合の電子ビームの電流密度分布を示すグラフ、第
２図（Ｂ）は同整形アパーチャの角度が正しく調整され
ていない場合の電子ビームの電流密度分布を示すグラフ
、第３図（Ａ）は従来の整形アパーチャの角度調整に要
ｊ−た時間分布を示すグラフ、第３図（Ｂ）は本発明の
一実施例の調整アパーチャの角度調整に要した時間分布
を示すグラフ、第４図は従来の電子ビーム露光装置の構
成図である。
３・・・・・・第一整形アパーチャ、４・・・・・・整
形偏向器、５・・・・・・整形１ノンズ、６・・・・・
・第２整形アバ−チャ、ＪＯ・・・・・・ビーム形状測
定器、〕、２・・・・・・電子ビーム、コ３・・・・・
・整形アパーチャ回動用モータ、〕−４・・・・・・モ
ーフ制御回路部、１５・・・・・・電子ビーム径、１６
．１８・・・・・・電子ビーム径より０、ｌ ７Ｊｍ内
側の電流密度。
代理人の氏名 弁理士 粟野重孝 はか］名り０８胃ワ
斃
任
嗜が禦知受Figure 2 is a configuration diagram of an electron optical system of an electron beam chromatography device according to an embodiment of the present invention, and Figure 2 (A) shows that the angle of the shaping aperture measured by a beam shape measuring device is adjusted correctly. Figure 2 (B) is a graph showing the current density distribution of the electron beam when the angle of the shaping aperture is not adjusted correctly. Figure 3 (A) is the graph showing the current density distribution of the electron beam when the angle of the shaping aperture is not adjusted correctly. FIG. 3(B) is a graph showing the time distribution required for adjusting the angle of the adjusting aperture according to an embodiment of the present invention, and FIG. 1 is a configuration diagram of an electron beam exposure apparatus of FIG. 3... First shaping aperture, 4... Shaping deflector, 5... Shaping 1 nons, 6...
・Second shaping aperture, JO...beam shape measuring device, ], 2...electron beam, ko3...
・Motor for rotating the shaping aperture, ]-4... Morph control circuit section, 15... Electron beam diameter, 16
．． 18...Current density 0, l 7Jm inside the electron beam diameter. Name of agent: Patent attorney Shigetaka Awano
Claims (1)
形アパーチャ回動用モータと、ビーム形状測定器を備え
、ビーム形状測定器の出力信号により整形アパーチャ回
動用モータを作動させ、整形アパーチャを回動させる電
子ビーム露光装置。It is equipped with a shaping aperture, a shaping deflector, a shaping lens, a shaping aperture rotation motor, and a beam shape measuring device, and the shaping aperture rotation motor is operated by the output signal of the beam shape measuring device to rotate the shaping aperture. Electron beam exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14784290A JPH0442916A (en) | 1990-06-06 | 1990-06-06 | Electron beam aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14784290A JPH0442916A (en) | 1990-06-06 | 1990-06-06 | Electron beam aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0442916A true JPH0442916A (en) | 1992-02-13 |
Family
ID=15439489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14784290A Pending JPH0442916A (en) | 1990-06-06 | 1990-06-06 | Electron beam aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442916A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482358B2 (en) | 2013-10-23 | 2016-11-01 | Johnson Electric S.A. | Solenoid valve |
-
1990
- 1990-06-06 JP JP14784290A patent/JPH0442916A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482358B2 (en) | 2013-10-23 | 2016-11-01 | Johnson Electric S.A. | Solenoid valve |
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