JPH0442835B2 - - Google Patents

Info

Publication number: JPH0442835B2
Authority: JP; Japan
Prior art keywords: bsf; optical sensor; manufacturing; wafer; infrared irradiation
Prior art date: 1984-09-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP59197348A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6174378A (ja

Inventor

Akira Usami

Hirobumi Suga

Yoshimaro Fujii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-09-20

Filing date

1984-09-20

Publication date

1992-07-14

1984-09-20 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

1984-09-20 Priority to JP59197348A priority Critical patent/JPS6174378A/ja

1986-04-16 Publication of JPS6174378A publication Critical patent/JPS6174378A/ja

1992-07-14 Publication of JPH0442835B2 publication Critical patent/JPH0442835B2/ja

Status Granted legal-status Critical Current

Links

238000000034 method Methods 0.000 claims description 29
230000003287 optical effect Effects 0.000 claims description 23
238000004519 manufacturing process Methods 0.000 claims description 21
239000012535 impurity Substances 0.000 claims description 20
238000009792 diffusion process Methods 0.000 claims description 19
230000000694 effects Effects 0.000 claims description 19
239000004065 semiconductor Substances 0.000 claims description 17
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
229910052710 silicon Inorganic materials 0.000 claims description 6
239000010703 silicon Substances 0.000 claims description 6
229910052782 aluminium Inorganic materials 0.000 claims description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
150000001875 compounds Chemical class 0.000 claims description 3
229910052751 metal Inorganic materials 0.000 claims description 3
239000002184 metal Substances 0.000 claims description 3
229910004298 SiO 2 Inorganic materials 0.000 claims description 2
235000012431 wafers Nutrition 0.000 description 33
238000010438 heat treatment Methods 0.000 description 20
238000005259 measurement Methods 0.000 description 7
229910052736 halogen Inorganic materials 0.000 description 4
150000002367 halogens Chemical class 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
239000011574 phosphorus Substances 0.000 description 4
230000035945 sensitivity Effects 0.000 description 4
230000003595 spectral effect Effects 0.000 description 4
238000010586 diagram Methods 0.000 description 3
238000002360 preparation method Methods 0.000 description 3
230000001052 transient effect Effects 0.000 description 3
229910010413 TiO 2 Inorganic materials 0.000 description 2
239000000969 carrier Substances 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000007650 screen-printing Methods 0.000 description 2
239000000758 substrate Substances 0.000 description 2
229910000809 Alumel Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
230000002547 anomalous effect Effects 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000004891 communication Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
238000011835 investigation Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
238000004904 shortening Methods 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
238000005019 vapor deposition process Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Sustainable Development (AREA)
Photovoltaic Devices (AREA)
Light Receiving Elements (AREA)

JP59197348A 1984-09-20 1984-09-20 赤外線照射により浅い接合とｂｓｆを同時に形成する光センサの製造方法 Granted JPS6174378A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59197348A JPS6174378A (ja)	1984-09-20	1984-09-20	赤外線照射により浅い接合とｂｓｆを同時に形成する光センサの製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59197348A JPS6174378A (ja)	1984-09-20	1984-09-20	赤外線照射により浅い接合とｂｓｆを同時に形成する光センサの製造方法

Publications (2)

Publication Number	Publication Date
JPS6174378A JPS6174378A (ja)	1986-04-16
JPH0442835B2 true JPH0442835B2 (fr)	1992-07-14

Family

ID=16372984

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59197348A Granted JPS6174378A (ja)	1984-09-20	1984-09-20	赤外線照射により浅い接合とｂｓｆを同時に形成する光センサの製造方法

Country Status (1)

Country	Link
JP (1)	JPS6174378A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62256427A (ja) *	1986-04-28	1987-11-09	Nec Corp	不純物拡散法
US5223453A (en) *	1991-03-19	1993-06-29	The United States Of America As Represented By The United States Department Of Energy	Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination
GB0114896D0 (en) *	2001-06-19	2001-08-08	Bp Solar Ltd	Process for manufacturing a solar cell
JP4957042B2 (ja) *	2006-03-29	2012-06-20	三菱電機株式会社	太陽電池の製造方法
JP2013042042A (ja) *	2011-08-18	2013-02-28	Tohoku Univ	シリコン太陽電池の製造方法

1984
- 1984-09-20 JP JP59197348A patent/JPS6174378A/ja active Granted

Also Published As

Publication number	Publication date
JPS6174378A (ja)	1986-04-16

Publication	Publication Date	Title
Narasimha et al.	1999	An optimized rapid aluminum back surface field technique for silicon solar cells
Ortega et al.	2000	Optoelectronic properties of CdO/Si photodetectors
CA1067609A (fr)	1979-12-04	Cellules photovoltaiques a couche d'arret avec tension accrue en circuit ouvert et methode de fabrication
US5510271A (en)	1996-04-23	Processes for producing low cost, high efficiency silicon solar cells
CN101720512B (zh)	2013-02-27	太阳能电池及其制造方法
JPS6252478B2 (fr)	1987-11-05
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TW201349547A (zh)	2013-12-01	具選擇性射極的太陽能電池製作方法
Yu et al.	1975	Cadmium− diffused CuInSe2 junction diode and photovoltaic detection
US20130247981A1 (en)	2013-09-26	Solar cell fabrication using a pre-doping dielectric layer
US4318217A (en)	1982-03-09	Method of manufacturing an infra-red detector device
TW201818560A (zh)	2018-05-16	矽材料之加工方法
US4005468A (en)	1977-01-25	Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection
JPH0442835B2 (fr)	1992-07-14
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Yelundur et al.	2002	Improved string ribbon silicon solar cell performance by rapid thermal firing of screen-printed contacts
JP2928433B2 (ja)	1999-08-03	光電変換素子の製造方法
JPH0661516A (ja)	1994-03-04	太陽電池の製造方法
USRE30412E (en)	1980-10-07	CdTe Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
Mizrah et al.	1977	Indium—Tin—Oxide—Silicon heterojunction photovoltaic devices
Tsaur et al.	1990	Hydrogen annealing of PtSi‐Si Schottky barrier contacts
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JP3091882B2 (ja)	2000-09-25	半導体装置及びその製造方法
Campbell et al.	1986	Simultaneous junction formation using a directed energy light source
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