JPH0437619A - Optical element forming die and its production - Google Patents
Optical element forming die and its productionInfo
- Publication number
- JPH0437619A JPH0437619A JP14162390A JP14162390A JPH0437619A JP H0437619 A JPH0437619 A JP H0437619A JP 14162390 A JP14162390 A JP 14162390A JP 14162390 A JP14162390 A JP 14162390A JP H0437619 A JPH0437619 A JP H0437619A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- diamond
- molding
- optical element
- amorphous carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 117
- 239000010432 diamond Substances 0.000 claims abstract description 117
- 239000011521 glass Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 230000003746 surface roughness Effects 0.000 claims abstract description 20
- 239000012071 phase Substances 0.000 claims abstract description 9
- 239000012808 vapor phase Substances 0.000 claims abstract description 3
- 238000000465 moulding Methods 0.000 claims description 61
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 238000002485 combustion reaction Methods 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 239000006061 abrasive grain Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-YPZZEJLDSA-N carbon-10 atom Chemical compound [10C] OKTJSMMVPCPJKN-YPZZEJLDSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 23
- 230000008021 deposition Effects 0.000 description 19
- 239000002245 particle Substances 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 241000511976 Hoya Species 0.000 description 5
- 238000001237 Raman spectrum Methods 0.000 description 5
- 238000002003 electron diffraction Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000005304 optical glass Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- -1 and atamantane Natural products 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- JLRGJRBPOGGCBT-UHFFFAOYSA-N Tolbutamide Chemical compound CCCCNC(=O)NS(=O)(=O)C1=CC=C(C)C=C1 JLRGJRBPOGGCBT-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、レンズ、プリズム等のガラス製光学素子を、
ガラス素材のプレス成形により製造するのに使用される
型及びその製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides glass optical elements such as lenses and prisms,
The present invention relates to a mold used for manufacturing a glass material by press molding and a manufacturing method thereof.
［従来の技術］
研磨工程を必要としないでガラス素材のプレス成形によ
ってレンズを製造する技術は従来のレンズの製造に於て
必要とされた複雑な工程をなくし、簡単かつ安価にレン
ズを製造することを可能とし、近来、レンズのみならず
プリズムその他のガラス製光学素子の製造に使用される
ようになってきた。[Conventional technology] The technology of manufacturing lenses by press-molding glass materials without the need for a polishing process eliminates the complicated processes required in conventional lens manufacturing, and manufactures lenses easily and inexpensively. Recently, it has come to be used for manufacturing not only lenses but also prisms and other glass optical elements.
このようなガラスの光学素子のプレスに使用される型材
に要求される性質としては、硬さ、耐熱性、離型性、鏡
面加工性等に優れていることが挙げられる。従来、この
種の型材として金属やセラミックス及びそれらをコーテ
ィングしたものとして特開昭４９−５１１２、特開昭５
２−４５６１３、特開昭６０−２４６２３０を初めとし
、数多（の提案がされている。しかし、これらの型及び
コーテイング材は、酸化し易い物質であったり、成形品
であるガラスとの融着やガラス面に曇りを生ずる等光学
ガラスの型材やコーテイング材として適当ではなかった
。Properties required of the mold material used for pressing such glass optical elements include excellent hardness, heat resistance, mold releasability, mirror workability, and the like. Conventionally, metals, ceramics, and coated materials of this type have been disclosed in Japanese Patent Application Laid-Open Nos. 49-5112 and 1973.
2-45613 and JP-A-60-246230, a number of proposals have been made.However, these molds and coating materials are made of substances that easily oxidize, or they do not mix well with the glass that is the molded product. It was not suitable as a mold material or coating material for optical glass because it caused staining and fogging on the glass surface.
［発明が解決しようとする課題］
これに対し、最近は上記の物質よりもガラスとの化学反
応が起こりにく（、酸化にも強く、大きな硬度を持つダ
イヤモンドをコーティングしたガラス成形用型（特開昭
６１−１８３１３４．特開昭６１−２４２９２２、特開
平１−３０１８６４）が提案されている。しかしながら
、ガラス成形用型のコーテイング材として勝れた性質を
持つダイヤモンドのみから成る膜の堆積速度は、堆積方
法にも依存するが、−射的にはアモルファス炭素が共存
する膜よりも遅（、型の生産性という観点からは好まし
くない。また、ダイヤモンド膜は゛、平坦な結晶面に囲
まれた多面体粒子の集合体であるためにダイヤモンド粒
子の境界には２つ以上の平面で囲まれた空間が存在し、
ダイヤモンド結晶のみで２次元平面を完全に埋めること
はできず、ダイヤモンド膜は成形用型材としては］の当
でない。[Problem to be solved by the invention] In contrast, recently, glass molding molds coated with diamond, which is resistant to oxidation and has high hardness, have been developed that are less likely to cause chemical reactions with glass than the above-mentioned substances (especially However, the deposition rate of a film consisting only of diamond, which has excellent properties as a coating material for glass molding molds, has been proposed. Although it depends on the deposition method, it is also slower than a film containing amorphous carbon (which is undesirable from the viewpoint of mold productivity). Because it is an aggregate of polyhedral particles, there is a space surrounded by two or more planes at the boundary of the diamond particle.
It is not possible to completely fill a two-dimensional plane with diamond crystals alone, and a diamond film is not suitable as a molding material.
また、ダイヤモンド、グラファイト及びアモルファス状
カーボンの３種類の物質から成る混合膜をコーティング
した型（特開平１−３０１８６４）は、温度変化で剥離
することは稀であるが、特にアモルファス成分が多い膜
では成形を重ねるにしたがいアモルファス状カーボンが
摩耗し、ダイヤモンド結晶だけが特異的に残り、最大面
粗さ２００人という面精度を保つことができなくなると
いう欠点を有している。In addition, molds coated with a mixed film consisting of three types of materials: diamond, graphite, and amorphous carbon (Japanese Unexamined Patent Publication No. 1-301864) rarely peel off due to temperature changes, but especially in films with a large amount of amorphous components. As the molding process continues, the amorphous carbon wears away, leaving only the diamond crystals uniquely remaining, making it impossible to maintain the surface accuracy of a maximum surface roughness of 200 mm.
従って、本発明の第１の目的は、ダイヤモンド粒子間に
空隙の存在しない膜が被覆された成形用型及びその製造
方法を提供することにある。Therefore, a first object of the present invention is to provide a mold coated with a film without voids between diamond particles, and a method for manufacturing the same.
本発明の第２の目的は、ダイヤモンドの堆積速度が速く
、型の生産性が高い成形用型の製造方法を提供すること
にある。A second object of the present invention is to provide a method for manufacturing a molding die in which the diamond deposition rate is high and the productivity of the mold is high.
本発明の第３の目的は、酸化し難く、ガラスとの融着や
ガラス面に曇りを生じない、コーティング成形用型及び
その製造方法を提供することにある。A third object of the present invention is to provide a mold for coating molding that is resistant to oxidation and does not cause fusion with glass or clouding of the glass surface, and a method for manufacturing the same.
本発明の第４の目的は、硬さ、耐熱性、離型性、鏡面加
工性等に優れている成形用型及びその製造方法を提供す
ることにある。A fourth object of the present invention is to provide a mold that is excellent in hardness, heat resistance, mold releasability, mirror workability, etc., and a method for manufacturing the same.
［課題を解決するための手段及び作用］本発明は、以上
述べたようなダイヤモンド粒子間の空隙の存在、堆積速
度の遅さを解決するためになされたものであり、光学ガ
ラス素子の形状に対応するようにあらかじめ加工したガ
ラス成形用型にコーティングするダイヤモンド膜の構造
をダイヤモンド結晶とアモルファス炭素の共存相とする
ことによって、上記問題点を解決したものである。[Means and effects for solving the problems] The present invention has been made in order to solve the above-mentioned problems of the existence of voids between diamond particles and the slow deposition rate. The above-mentioned problems are solved by making the structure of the diamond film coated on a correspondingly pre-processed glass forming mold into a coexisting phase of diamond crystals and amorphous carbon.
すなわち、本発明は、■ガラス製光学素子のプレス成形
に使用される型において、型母材の少なくとも成形面に
はダイヤモンド結晶とアモルファス炭素の共存相からな
る膜が被覆されていることを特徴とする、光学素子成形
用型、■ガラス製光学素子のプレス成形に使用される型
の製造方法において、型母材の少なくとも成形面に気相
法によってダイヤモンド結晶とアモルファス炭素の共存
相を堆積することを特徴とする、光学素子成形用型の製
造方法、並びに、■堆積したダイヤモンド結晶とアモル
ファス炭素の共存相の表面粗さが光学素子成形用型とし
ての面精度を十分に満たしていない場合には、型表面を
研磨することを特徴とする、前記光学素子成形用型の製
造方法である。That is, the present invention is characterized in that: (1) in a mold used for press-molding a glass optical element, at least the molding surface of the mold base material is coated with a film consisting of a coexisting phase of diamond crystals and amorphous carbon; A mold for molding an optical element, ■ A method for manufacturing a mold used for press molding of a glass optical element, in which a coexisting phase of diamond crystals and amorphous carbon is deposited on at least the molding surface of the mold base material by a vapor phase method. A method for manufacturing a mold for molding an optical element, which is characterized by the following: and (1) when the surface roughness of the coexisting phase of deposited diamond crystals and amorphous carbon does not sufficiently satisfy the surface precision as a mold for molding an optical element. , a method for manufacturing a mold for molding an optical element, characterized in that the surface of the mold is polished.
以下、本発明に付いて詳述する。The present invention will be explained in detail below.
本発明のダイヤモンド膜の形成には、既に公知のマイク
ロ波プラズマＣＶＤ法、高周波プラズマＣＶＤ法、直流
プラズマＣＶＤ法、直流アーク熱プラズマＣＶＤ法、高
周波熱プラズマＣＶＤ法、燃焼炎法、熱フィラメント法
、電子アシストプラズマＣＶＤ法等既に公知のダイヤモ
ンド膜の形成力？去を用いる。The diamond film of the present invention can be formed using the known microwave plasma CVD method, high frequency plasma CVD method, direct current plasma CVD method, direct current arc thermal plasma CVD method, high frequency thermal plasma CVD method, combustion flame method, hot filament method, What is the forming power of diamond film already known by electron-assisted plasma CVD method? Use left.
これらの装置を用いてダイヤモンド膜を形成する原料ガ
スには、炭素含有ガスを用いる。これに混合するガスと
して、水素、酸素、ヘリウム、ネオン、アルゴン、キセ
ノン等を用いる。炭素含有物としては、メタン、エタン
、プロパン、アタマンタン等の飽和炭化水素類、ベンゼ
ン、ナフタリン等の不飽和炭化水素類及びこれらの水素
原子置換体、メタノール、エタノール等のアルコール類
、−酸化炭素、二酸化炭素等の酸化物、アセトアルデヒ
ド、ホルムアルデヒド等のアルデヒド類、ギ酸、酢酸等
のカルボン酸類、アセトン、ジエチルケトン等のケトン
類、メチルエーテル、エチルエーテル等のエーテル類を
用いる。これらの炭素含有物のうち室温でガスのものは
そのままボンベより成膜室へ導入するが、室温で液体や
固体のものはバブリングや加熱してガス化してから成膜
室へ導入する。A carbon-containing gas is used as a raw material gas for forming a diamond film using these devices. Hydrogen, oxygen, helium, neon, argon, xenon, etc. are used as the gas to be mixed with this. Examples of carbon-containing substances include saturated hydrocarbons such as methane, ethane, propane, and atamantane, unsaturated hydrocarbons such as benzene and naphthalene, and hydrogen-substituted products thereof, alcohols such as methanol and ethanol, carbon oxide, Oxides such as carbon dioxide, aldehydes such as acetaldehyde and formaldehyde, carboxylic acids such as formic acid and acetic acid, ketones such as acetone and diethyl ketone, and ethers such as methyl ether and ethyl ether are used. Among these carbon-containing substances, those that are gases at room temperature are directly introduced into the film forming chamber from a cylinder, but those that are liquid or solid at room temperature are gasified by bubbling or heating before being introduced into the film forming chamber.
上に述べたダイヤモンド堆積法の１つによってダイヤモ
ンド膜を堆積する時にダイヤモンドの堆積速度は、上記
原料物質の濃度によって大きく変化し、一般に、炭素含
有物質の濃度が高ければ高いほど速く成る。しかしなが
ら、炭素含有物質の濃度が高ければ高いほどダイヤモン
ド膜中のアモルファス炭素やグラファイトの混入量は増
加する。このダイヤモンド膜中のアモルファス炭素やグ
ラファイトの存在の仕方を以下に述べる。先ずこれらア
モルファス炭素やグラファイトは、−個のダイヤモンド
粒子の中に存在することは稀であり、いくつかの小さな
グラファイト微結晶や髭結晶がアモルファス炭素の中に
包み込まれる形で存在する。更にまた、アモルファス炭
素は、ダイヤモンド結晶間にも存在する。つまり、ダイ
ヤモンドはダイヤモンド、グラファイトはグラファイト
でそれぞれ結晶を作り、それらの間をアモルファス炭素
が埋めていいる形態である。When depositing a diamond film by one of the diamond deposition methods mentioned above, the rate of diamond deposition varies greatly depending on the concentration of the source material, and is generally faster the higher the concentration of carbon-containing material. However, as the concentration of carbon-containing substances increases, the amount of amorphous carbon and graphite mixed into the diamond film increases. The manner in which amorphous carbon and graphite exist in this diamond film will be described below. First of all, these amorphous carbon and graphite rarely exist within a single diamond particle, and exist in the form of several small graphite microcrystals or whiskers wrapped in amorphous carbon. Furthermore, amorphous carbon also exists between diamond crystals. In other words, diamond is made of diamond, graphite is made of graphite, and the spaces between them are filled with amorphous carbon.
これらグラファイトやアモルファス炭素のガラス成形へ
の影響を見るために種々のダイヤモンド膜を用いて検討
の結果、グラファイトとアモルファス炭素の塊は、成形
時におけるダイヤモンド膜とガラスの反応性を高め、成
形による膜の劣化を招く原因となり好ましくないことが
解った。ただし、ダイヤモンド結晶粒子間のアモルファ
ス炭素の存在は、成形プロセスに全く影響しないことが
判明した。更にまた、炭素含有物質の濃度を高めても以
下に述べる朧結晶の選択堆積法を用いると、グラファイ
トとアモルファス炭素の塊が生成する確率を減少でき、
ダイヤモンド粒子間のみにアモルファス炭素が存在する
ダイヤモンド膜を生成できることが判明した。これをＳ
ＥＭ写真を基にした模式図で示すと第１図の様になる。As a result of studies using various diamond films to see the effects of these graphite and amorphous carbon on glass forming, it was found that lumps of graphite and amorphous carbon increase the reactivity of the diamond film and glass during forming, and the film formed by forming It was found that this is undesirable because it causes deterioration. However, it was found that the presence of amorphous carbon between diamond crystal particles had no effect on the forming process. Furthermore, even if the concentration of carbon-containing substances is increased, the probability of forming graphite and amorphous carbon lumps can be reduced by using the selective deposition method of hazy crystals described below.
It has been found that it is possible to generate a diamond film in which amorphous carbon exists only between diamond particles. This is S
A schematic diagram based on an EM photograph is shown in Fig. 1.
同図で９ダイヤモンド粒子、１０はアモルファス炭素で
ある。つまり、堆積速度が速（、しかも成形プロセスに
は悪影響の少ないダイヤモンド膜を生成できることが解
った。In the figure, 9 is diamond particles and 10 is amorphous carbon. In other words, it has been found that a diamond film can be produced that has a fast deposition rate (and has little negative impact on the molding process).
以下、選択堆積の具体的な方法について述べる。ダイヤ
モンド結晶の選択堆積は、型母材上にダイヤモンド結晶
が成長しやすい領域としにくい領域をもうけることによ
って行なう。A specific method of selective deposition will be described below. Selective deposition of diamond crystals is carried out by creating regions on the mold base material where diamond crystals are likely to grow and regions where diamond crystals are difficult to grow.
例えば、第２図（ａ）〜（ｆ）に示すように、先ず型母
材５上の核形成密度を高めるためにダイヤモンド砥粒を
含む有機溶媒中で超音波処理し型表面に傷を形成する（
ａ）。次に型表面にレジスト６を塗布しくｂ）、電子線
リソグラフィー等によりレジストパターンを形成する（
Ｃ）。その後、Ａｒイオンビーム等で型表面をエツチン
グして、レジストのない部分の傷を取り去り（ｄ）、レ
ジスト除去後（ｅ）、ダイヤモンドを堆積すると、傷の
ある部分にのみダイヤモンドの核７の形成が起こり（ｆ
）のようにダイヤモンド８が堆積できる。For example, as shown in FIGS. 2(a) to (f), first, in order to increase the nucleation density on the mold base material 5, ultrasonic treatment is performed in an organic solvent containing diamond abrasive grains to form scratches on the mold surface. do(
a). Next, a resist 6 is applied to the mold surface (b), and a resist pattern is formed by electron beam lithography, etc. (
C). After that, the mold surface is etched with an Ar ion beam or the like to remove scratches in areas where there is no resist (d), and after removing the resist (e), diamond is deposited, forming diamond nuclei 7 only in the scratched areas. occurs (f
Diamond 8 can be deposited as shown in ).
又、型表面にあらかじめダイヤモンド微粒子を撒いた後
にレジストを塗布し、レジストのバタンを形成し、レジ
ストの存在する部分だけにダイヤモンド結晶を堆積する
方法、イオンビームエツチング、フォーカストイオンビ
ーム等でパターン上に凹凸を形成しこの凹の部分のみに
ダイヤモンド結晶を堆積する方法等がある。更に又、型
母材上にパターンを形成したマスクを置いてダイヤモン
ド結晶を堆積する方法もあるが、選択堆積の方法はここ
に述べた方法以外だけではなく、他の方法を用いること
も可能である。In addition, after scattering diamond fine particles on the mold surface in advance, a resist is applied, a resist button is formed, and diamond crystals are deposited only on the areas where the resist is present, ion beam etching, focused ion beam, etc. There is a method of forming irregularities and depositing diamond crystals only on the concave portions. Furthermore, there is a method of depositing diamond crystals by placing a mask with a pattern formed on the mold base material, but it is also possible to use not only the method described here but also other methods for selective deposition. be.
選択堆積をする際に形成するパターンは、全体として２
次元子面を埋めることができるものならばどのような形
状でもさしつかえない。The overall pattern formed during selective deposition is 2.
Any shape is acceptable as long as it can fill the dimensional surface.
例えば、第２図（ｇ）に示すように、正方格子の各格子
点上に円状の核形成密度の高い領域を円状にパターニン
グしても良いし、（ｈ）に示すように、三角格子の各格
子点上に円状の核形成密度の高い領域をパターニングし
ても良い。又、格子種類、核形成密度の高い領域の形状
として他のものを用いることも可能である。For example, as shown in FIG. 2(g), a circular region with high nucleation density may be patterned on each lattice point of a square lattice, or a triangular region as shown in FIG. 2(h) may be patterned. A circular region with high nucleation density may be patterned on each lattice point of the lattice. It is also possible to use other lattice types and shapes of regions with high nucleation density.
又、パターンは型全体に渡って一様にする必要はな（、
一つの型表面に何種類かのパターンを形成してもさしつ
かえない。各パターンの面積は、堆積装置、型材の種類
および型材表面処理法によって決まる核形成密度より計
算してそのパターンからダイヤモンド結晶が一個生成す
るのに必要十分なものとなるように決める。Also, the pattern does not need to be uniform across the entire mold (
There is no problem even if several types of patterns are formed on the surface of one mold. The area of each pattern is calculated from the nucleation density determined by the deposition apparatus, the type of mold material, and the surface treatment method of the mold material, and is determined so as to be necessary and sufficient for producing one diamond crystal from the pattern.
上に述べた本発明でダイヤモンド単結晶と呼んでいる物
質は様々の格子欠陥や（１１１）面の積層欠陥を含んで
いたり（１１１）面で接する双晶のこともあるが、基本
構造は立方晶ダイヤモンドである。The substance referred to as a diamond single crystal in the present invention described above may contain various lattice defects and stacking faults on the (111) plane, or may be twin crystals that touch on the (111) plane, but its basic structure is cubic. It is a crystal diamond.
又、上記方法によって光学素子形成用型材の上にコーテ
ィングしたダイヤモンド膜の表面粗さが光学素子成形用
に適合しないほどに荒れている時には研磨を行なう。研
磨は、適当な溶媒に溶かしたダイヤモンド粉末と金属板
やダイヤモンド粉末を埋め込んだ金属板等を用いて行な
う。ダイヤモンド粉末を溶かす溶媒としては水や研磨用
の油を用いる。金属板には、銅、鉄、ニッケル、コバル
ト、アルミニウム及びこれらの合金を用いることが可能
である。金属板及び型をそれぞれ回転させながら両者を
接触させてダイヤモンド膜を研磨する。この際、多結晶
ダイヤモンド膜の研磨速度を促進するために金属板を加
熱したり、研磨雰囲気ガスとして水素、酸素、ヘリウム
、ネオン、アルゴン、キセノン、窒素、−酸化炭素、二
酸化炭素、亜酸化窒素、二酸化窒素等を用いても良い。Further, when the surface roughness of the diamond film coated on the mold material for forming an optical element by the above method is so rough that it is not suitable for molding an optical element, polishing is performed. Polishing is performed using diamond powder dissolved in a suitable solvent and a metal plate or a metal plate embedded with diamond powder. Water or polishing oil is used as a solvent to dissolve the diamond powder. Copper, iron, nickel, cobalt, aluminum, and alloys thereof can be used for the metal plate. The diamond film is polished by bringing the metal plate and mold into contact while rotating them. At this time, the metal plate is heated to accelerate the polishing speed of the polycrystalline diamond film, and the polishing atmosphere gases include hydrogen, oxygen, helium, neon, argon, xenon, nitrogen, carbon oxide, carbon dioxide, and nitrous oxide. , nitrogen dioxide, etc. may also be used.
以上研磨方法について述べたがダイヤモンド膜の研磨方
法はこれに限るものではな（、他の方法であっても良い
。Although the polishing method has been described above, the method of polishing the diamond film is not limited to this (although other methods may be used).
［実施例］
以下、実施例により本発明の光学ガラス成形用型の製造
方法とこれを用いて光学ガラス素子な形成した結果につ
いて述べる。[Example] Hereinafter, the method for manufacturing an optical glass mold of the present invention and the results of forming an optical glass element using the same will be described with reference to Examples.
〈実施例１〉
第３図、第４図は本発明に係る光学素子成形用型の１つ
の実施態様を示すもので、図中、１は超硬合金を初めと
する耐熱性、耐圧性の型母材、２は該型母材のガラス素
材に接触する成形面に形成された多結晶ダイヤモンド膜
である。<Example 1> Figures 3 and 4 show one embodiment of the mold for molding an optical element according to the present invention. The mold base material 2 is a polycrystalline diamond film formed on the molding surface of the mold base material that comes into contact with the glass material.
第３図は光学素子のプレス成形前の状態を示し、第４図
は光学素子成形後の状態を示す。第３図に示すように、
型の間に置かれたガラス素材３をプレス成形することに
よって、第４図に示すようにレンズ等の光学素子４が形
成される。FIG. 3 shows the optical element before press molding, and FIG. 4 shows the optical element after molding. As shown in Figure 3,
By press-molding the glass material 3 placed between the molds, an optical element 4 such as a lens is formed as shown in FIG.
先ず、５ｉｓＮ４からなる直径３５ｍｍ、曲率半径４５
ｍｍの凹状の型を平均粒径２０μｍのダイヤモンド砥粒
を含むエタノール中で２時間超音波処理したのち、エタ
ノール、アセトン中でこの順番に１０分ずつ超音波洗浄
し大気中で十分Ｉ２燥させる。−辺の長さ２μｍの正方
格子の各格子点上に直径０．８μｍの円状のレジストパ
ターンを形成した後、Ａｒイオンビームを用いて型表面
を５０００人エツチングする。この際、レジストのない
部分だけがエツチングされ、レジストを除去しダイヤモ
ンドを堆積するとレジストで覆われていた部分からだけ
ダイヤモンド結晶が成長し、選択成長が可能となる。レ
ジストを除去した後の型母材１３を第５図のマイクロ波
ＣＶＤ装置の型ホルダ−１５上に設置する。型上にダイ
ヤモンド結晶を均一に堆積させるために型ホルダ−１５
の軸は、真空室１１のエアベアリング２０を通って外側
に設置されたモーター２１に繋げ、この機構により減圧
下で型ホルダ−１５を回転させる。回転数は、１分間２
ロ転にした。First, a diameter of 35 mm and a radius of curvature of 45 is made of 5isN4.
A concave mold of 1.0 mm in diameter was subjected to ultrasonic treatment for 2 hours in ethanol containing diamond abrasive grains with an average particle diameter of 20 μm, then ultrasonically cleaned in ethanol and acetone for 10 minutes each in this order, and thoroughly dried in the atmosphere. - After forming a circular resist pattern with a diameter of 0.8 μm on each lattice point of a square lattice with a side length of 2 μm, the surface of the mold is etched by 5000 etchings using an Ar ion beam. At this time, only the parts without resist are etched, and when the resist is removed and diamond is deposited, diamond crystals grow only from the parts covered with resist, making selective growth possible. The mold base material 13 from which the resist has been removed is placed on the mold holder 15 of the microwave CVD apparatus shown in FIG. Mold holder 15 is used to uniformly deposit diamond crystals on the mold.
The shaft is connected to a motor 21 installed outside through an air bearing 20 of the vacuum chamber 11, and this mechanism rotates the mold holder 15 under reduced pressure. The number of revolutions is 2 per minute.
I turned it into a lo.
次に、真空室１１内を不図示のメカニカルブースターポ
ンプ、回転ポンプにより排気口１２から排気して真空度
を２Ｘ１０−”Ｔｏｒｒに引上げる。これらポンプの最
終段は、これもまた不図示のガスの除外装置に繋り、成
膜用排ガスは大気中に排出される。原料ガスの導入口１
４は、−本の場合もあるし一本以上で構成されている場
合もある。この原料ガスラインは不図示のマスフロー制
御系及びガスボンベに繋っており、１種類のガスを流す
ことも２種類以上のガスを流すことも２種類以上のガス
を混合して流すことも可能である。Next, the inside of the vacuum chamber 11 is evacuated from the exhaust port 12 using a mechanical booster pump (not shown) and a rotary pump to raise the degree of vacuum to 2X10-'' Torr. Exhaust gas for film formation is discharged into the atmosphere. Raw material gas inlet 1
4 may be - books or may consist of one or more books. This raw gas line is connected to a mass flow control system and gas cylinder (not shown), and it is possible to flow one type of gas, two or more types of gas, or a mixture of two or more types of gas. be.
ガス導入口１４より真空室１１にＣＨ４，Ｈ，をそれぞ
れ３．２００３ＣＣＭの流量で混合して導入し、プラン
ジャー１７、不図示の電源部に接続しているスリースタ
ブ１８を調節して型の位置にプラズマを生成した。なお
、１６は導波管である。２．４５ＧＨｚのマイクロ波出
力１５００Ｗ、圧力２００Ｔｏｒｒ、型加熱なしの条件
下、１時間の堆積で２μｍの膜が形成された。成膜中・
の型温度は８５０℃〜８７０℃であった。CH4 and H are mixed and introduced into the vacuum chamber 11 through the gas inlet 14 at a flow rate of 3.2003 CCM, respectively, and the plunger 17 and the sleeve stub 18 connected to the power source (not shown) are adjusted to form the mold. Generated plasma at the location. Note that 16 is a waveguide. A 2 μm film was formed in 1 hour of deposition under conditions of a 2.45 GHz microwave power of 1500 W, a pressure of 200 Torr, and no mold heating. During film formation・
The mold temperature was 850°C to 870°C.
真空室から取りだした多結晶ダイヤモンド膜２μｍをコ
ーティングした型１を第６図に示す研磨装置５０内の型
ホルダ−５２に設置した。排気口５７から研磨装置５０
内を３Ｘ１０−”Ｔｏｒｒまで排気した後、ガス導入口
５８から水素ガスを１１００３ＣＣの流量で研磨装置５
０内に導入した。平均粒径１μｍのダイヤモンド粉末を
含んだ鉄板５１及び型ホルダ−５２をエアベアリング５
３５４及びモーター５５．５６を用いて５００ｒｐｍで
回転させた。鉄板の表面形状は直径８０ｍｍ、球面半径
４５ｍｍの凸状にした。The mold 1 coated with a 2 μm polycrystalline diamond film taken out from the vacuum chamber was placed in a mold holder 52 in a polishing apparatus 50 shown in FIG. Polishing device 50 from exhaust port 57
After evacuating the interior to 3X10-'' Torr, hydrogen gas is introduced into the polishing device 5 from the gas inlet 58 at a flow rate of 11003 CC.
It was introduced within 0. An iron plate 51 containing diamond powder with an average particle size of 1 μm and a mold holder 52 are placed in an air bearing 5.
354 and motor 55.56 at 500 rpm. The surface shape of the iron plate was a convex shape with a diameter of 80 mm and a spherical radius of 45 mm.
１０時間研＠後の型表面の粗さはＲｍａｘ２５０人であ
った。The roughness of the mold surface after 10 hours of polishing was Rmax 250.
ＳＥＭ観察から型上のダイヤモンド粒の平均粒径は約２
μｍであり、ダイヤモンド膜のラマンスペクトルを測定
すると、ダイヤモンドの鋭い１３３３ｃｍ−’のピーク
とアモルファス炭素の１５８０ｃｍ−’にブロードなピ
ークが観（リリされた。反射電子線回折ではダイヤモン
ドのみが観測された。膜をダイヤベンで剥し、電子顕微
鏡で観察するとダイヤモンドの粒界部にアモルファスの
模様が観測された。これらの結果より型上の膜は、ダイ
ヤモンドとアモルファス炭素からなることが解った。From SEM observation, the average grain size of the diamond grains on the mold is approximately 2.
μm, and when the Raman spectrum of the diamond film was measured, a sharp peak at 1333 cm-' for diamond and a broad peak at 1580 cm-' for amorphous carbon were observed.Only diamond was observed by reflection electron diffraction. When the film was peeled off with a Diaben and observed under an electron microscope, amorphous patterns were observed at the diamond grain boundaries.These results revealed that the film on the mold was composed of diamond and amorphous carbon.
次に、この型を用いてガラスレンズのプレス成形を行っ
た。成形装置を第７図に示す。１０２は成形装置、１０
４は取入れ用置換室であり、１０６は成形室である。１
０８は蒸着室で、１１０は取り出し用置換室である。１
１２１１４ １１６はゲートバルブであり、１１８はレ
ールであり、１２０は該レール上を矢印Ａ方向に搬送せ
しめられるパレットである。１２４．１３８．１４０．
１５０はシリンダであり、１２６．１５２はバルブであ
る。１２８は成形室１０６内においてレール１１８に沿
って配列されているヒーターである。Next, a glass lens was press-molded using this mold. The molding apparatus is shown in FIG. 102 is a molding device, 10
4 is an intake replacement chamber, and 106 is a molding chamber. 1
08 is a deposition chamber, and 110 is a replacement chamber for extraction. 1
12114 116 is a gate valve, 118 is a rail, and 120 is a pallet that is transported on the rail in the direction of arrow A. 124.138.140.
150 is a cylinder, and 126.152 is a valve. 128 is a heater arranged along the rail 118 in the molding chamber 106.
成形室１０６内はバラレット搬送方向に沿って順に加熱
ゾーン１０６−１．ブレスゾーン１０６２及び徐冷ゾー
ン１０６−３とされている。ブレスゾーン１０６−２に
おいて、上記シリンダ１３８のロッド１３４の下端には
成形用上型部材１３０が固定されており、上記シリンダ
１４０のロッド１３６の上端には成形用下型部材１３２
が固定されている。これら上型部材１３０及び下型部材
１３２は、上記第１図の本発明による型部材である。蒸
着室１０８内においては、蒸着物質１４６を収容した容
器１４２及び該容器を加熱するためのヒーター１４４が
配置されている。Inside the molding chamber 106, heating zones 106-1. They are a breath zone 1062 and an annealing zone 106-3. In the breath zone 106-2, an upper mold member 130 for molding is fixed to the lower end of the rod 134 of the cylinder 138, and a lower mold member 132 for molding is fixed to the upper end of the rod 136 of the cylinder 140.
is fixed. These upper mold member 130 and lower mold member 132 are the mold members according to the present invention shown in FIG. 1 above. Inside the vapor deposition chamber 108, a container 142 containing a vapor deposition substance 146 and a heater 144 for heating the container are arranged.
軟化点５ｐ＝５８６℃、ガラス転移点Ｔｇ＝４８５℃の
光学ガラス５Ｆ１４ （ホーヤ製）を所定の形状に加工
して、成形のためのブランクを得た。Optical glass 5F14 (manufactured by Hoya) having a softening point of 5p=586°C and a glass transition point of Tg of 485°C was processed into a predetermined shape to obtain a blank for molding.
ガラスブランクをパレット１２０に置き、取り入れ置換
室１０４内の１２０−１の位置へ入れ、該位置のパレッ
トをシリンダ１２４のロッド１２２によりＡ方向に押し
てゲートバルブ１１２を越えて成形室１０６内の１２０
−２の位置へと搬送し、以下同様にして所定のタイミン
グで順次新たに取り入れ置換室１０４内にパレットを入
れ、このたびにパレットを成形室１０６内で１２０−２
−・・・・・・→１２０−８の位置へと順次搬送した。A glass blank is placed on the pallet 120 and put into the position 120-1 in the intake/displacement chamber 104, and the pallet at that position is pushed in the direction A by the rod 122 of the cylinder 124, past the gate valve 112 and placed at the position 120-1 in the molding chamber 106.
-2 position, and in the same manner, new pallets are sequentially introduced into the replacement chamber 104 at predetermined timing, and each time the pallet is transferred to the molding chamber 106 at 120-2.
-......→Sequentially conveyed to position 120-8.
この間に、加熱ゾーン１０６−１ではガラスブランクを
ヒーター１２８により徐々に加熱し、１２０−４の位置
で軟化点以上とした上で、ブレスゾーン１０６−２へと
搬送し、ここでシリンダ１３８，１４０を動作させて上
型部材１３０及び下型部材１３２により１０ｋｇ／ｃｍ
２の圧力で５分間プレスし、その後圧力を解除しガラス
転移点付下まで冷却し、その後シリンダ１３８，１４０
を作動させて上型部材１３０及び下型部材１３２をガラ
ス成形品から離型した。During this time, in the heating zone 106-1, the glass blank is gradually heated by the heater 128 to reach the softening point or higher at the position 120-4, and then conveyed to the breath zone 106-2, where the cylinders 138, 140 10kg/cm by operating the upper mold member 130 and lower mold member 132
2 for 5 minutes, then the pressure was released and the cylinders 138, 140 were cooled to below the glass transition point.
was operated to release the upper mold member 130 and the lower mold member 132 from the glass molded product.
該プレスに際しては、上記パレットが成形周胴型部材と
して利用された。然る後に、徐冷ゾーン１０６−３では
ガラス成形品を徐々に冷却した。During the pressing, the pallet was used as a molding circumferential member. After that, the glass molded product was gradually cooled in the slow cooling zone 106-3.
尚、成形室１０６内には窒素ガスを充満させた。Note that the molding chamber 106 was filled with nitrogen gas.
成形室１０６内に置いて１２０−８の位置に到達したパ
レットを、次の搬送ではゲートバルブ１１４を越えて蒸
着室１０８内の１２０−９の位置へと搬送し、続けてゲ
ートバルブ１１６を越えて取り出し置換室１１０内の１
２０−１０の位置へと搬送した。そして、次の搬送時に
はシリンダ１５０を作動させてロッド１４８によりガラ
ス成形品を成形装置１０２外へ取り出した。The pallet that has been placed in the molding chamber 106 and has reached the position 120-8 is then transported beyond the gate valve 114 to the position 120-9 in the deposition chamber 108, and then continues beyond the gate valve 116. 1 in the extraction and replacement chamber 110
It was transported to the 20-10 position. Then, during the next conveyance, the cylinder 150 was operated and the glass molded product was taken out of the molding apparatus 102 by the rod 148.
このようにして連続５０００回の成形を行なった結果を
途中経過と共に表１に示す。５０００回目に型の表面粗
さが少し低下したが、レンズの表面粗さに変化はなかっ
た。Table 1 shows the results of 5000 continuous moldings in this manner, along with the progress. At the 5000th time, the surface roughness of the mold decreased slightly, but there was no change in the surface roughness of the lens.
表１
く比較例１〉
メタン濃度を１．５％から０．３％にかえた以外は実施
例１と全く同条件でダイヤモンド膜をＳ ｉ ３＼４型
上に堆積した。２μｍの膜を堆積するのに８時間かかっ
た。この型を研磨し、実施例１と同様の成形を行なった
ところ１回目のレンズ成形品の表面に０．０２μｍ〜０
，２μｍ径、型表面の凹部に対応した高さ数千人はどの
多数の突起が認められたので成形を中止した。Table 1 Comparative Example 1 A diamond film was deposited on the Si 3\4 type under the same conditions as in Example 1 except that the methane concentration was changed from 1.5% to 0.3%. It took 8 hours to deposit a 2 μm film. When this mold was polished and molded in the same manner as in Example 1, the surface of the first lens molded product was 0.02 μm to 0.
, 2 μm in diameter, several thousand in height corresponding to the recesses on the mold surface, and molding was discontinued because a large number of protrusions were observed.
〈実施例２〉
ＷＣを主成分としＴｉｃ、ＴａＣをバインダーとする直
径４０ｍｍ、平板の型上↓こ平均粒径０．２μｍのダイ
ヤモンド砥粒をＯ，１ｍｇ分散した。その上にレジスト
をかけ、−辺２μｍの正方格子点上に直径０．８μｍの
円状のパターンを形成した後、この型を実施例１と同じ
マイクロ波ＣＶＤ装置の型ホルダ−１５上に設置する。<Example 2> O.1 mg of diamond abrasive grains having an average particle size of 0.2 μm were dispersed on a flat plate mold having a diameter of 40 mm and containing WC as a main component and Tic and TaC as binders. A resist was applied thereon to form a circular pattern with a diameter of 0.8 μm on the square lattice points of −2 μm on the side, and then this mold was placed on the mold holder 15 of the same microwave CVD apparatus as in Example 1. do.
回転数は、１分間１回転にした。The rotation speed was 1 rotation per minute.
次に、真空室ｌｌ内の真空度を２Ｘ１０−’Ｔ。Next, the degree of vacuum in the vacuum chamber 11 is set to 2X10-'T.
ｒｒまで引上げる。Ｃ，Ｈ，ＯＨ（総量１００ＣＣ）を
バブラーを通して気化し、ガス導入口１４より真空室１
１に水素ガス（流量、２００３ＣＣＭ）と共に導入し、
プランジャー１７、スノースタブ１８を調節して型の位
置にプラズマを生成した。２．４５ＧＨｚのマイクロ波
出力１０００Ｗ、圧力９０Ｔｏｒｒ、型加熱なしの条件
下、１０分の堆積で２μｍの膜が形成された。Pull up to rr. C, H, and OH (total amount 100 cc) are vaporized through a bubbler and introduced into the vacuum chamber 1 from the gas inlet 14.
1 together with hydrogen gas (flow rate, 2003 CCM),
Plasma was generated at the position of the mold by adjusting the plunger 17 and snow stub 18. A 2 μm film was formed in 10 minutes of deposition under conditions of a 2.45 GHz microwave power of 1000 W, a pressure of 90 Torr, and no mold heating.
成膜中の型温度は８００℃〜８２０℃であった。The mold temperature during film formation was 800°C to 820°C.
真空室１１から取りだしたダイヤモンド膜２をコーチイ
ブした型１を実施例１と同じ研磨装置５０内の型ホルダ
−５２に設置した。研磨装置５０内を３Ｘ１０−”Ｔｏ
ｒｒまで排気した後、ガス導入口５８からアルゴンガス
をＩＯｓｃｃＭの流量で研磨装置５０内に導入した。平
均粒径０．５μｍのダイヤモンド粉末を含んだＮｉ板５
１及び型ホルダ−５２を６００ｒｐｍで回転させた。Ｎ
ｌ板の表面形状は直径５０ｍｍ、平板状にした。２０時
間研磨した後、型表面粗さを測定するとＲｍａｘ２００
人であった。The mold 1 coated with the diamond film 2 taken out from the vacuum chamber 11 was placed in the mold holder 52 in the same polishing device 50 as in Example 1. The inside of the polishing device 50 is 3X10-”To
After exhausting to rr, argon gas was introduced into the polishing apparatus 50 from the gas inlet 58 at a flow rate of IOsccM. Ni plate 5 containing diamond powder with an average particle size of 0.5 μm
1 and mold holder 52 were rotated at 600 rpm. N
The surface shape of the plate was a flat plate with a diameter of 50 mm. After polishing for 20 hours, the mold surface roughness was measured to be Rmax 200.
It was a person.
型上のダイヤモンド膜のラマンスペクトルを測定すると
、鋭い１３３３ｃｍ−’のピークとプロトな１５８０ｃ
ｍ−’のピークが観測された。反射電子線回折ではダイ
ヤモンドのみが観測された。When we measured the Raman spectrum of the diamond film on the mold, we found a sharp peak at 1333cm-' and a proto-1580c peak.
A peak of m-' was observed. Only diamond was observed by reflection electron diffraction.
電子顕微鏡によりアモルファス炭素は粒界部のみに存在
することが分かった。これらの結果より型上の膜は、ダ
イヤモンドとアモルファス状炭素からなることが解った
。Electron microscopy revealed that amorphous carbon exists only at grain boundaries. These results revealed that the film on the mold was composed of diamond and amorphous carbon.
次に、この型を用いて実施例１と全（同様に硝材に軟化
点５ｐ＝６５０℃、ガラス転移点Ｔｇ６００″ＣのＰＳ
Ｋ２ （ホーヤ製）を用いてガラスレンズのプレス成形
を行った。Next, using this mold, we used PS with a softening point of 5p = 650°C and a glass transition point of Tg of 600''C as a glass material.
A glass lens was press-molded using K2 (manufactured by Hoya).
このようにして連続５０００回の成形を行ない１００回
毎に１００個のガラス板をサンプリングして表面粗さを
測定したところ、５０００回目の表面粗さの平均はＲｍ
ａｘ２５０人であった。When molding was performed 5000 times in a row in this way and the surface roughness was measured by sampling 100 glass plates every 100 times, the average surface roughness at the 5000th time was Rm
There were 250 people.
〈実施例３〉
アルミナからなる直径２５ｍｍ、曲率半径４５ｍｍの凸
状の型にレジストをかけ、格子間隔２μｍの三角格子点
上に直径０．５μｍの円形のレジストパターンを抜いた
。加速電圧５００ｅＶのＡｒイオンビームで０．３μｍ
の深さまでエツチングした。レジスト除去後この型を公
知の直流ＣＶＤ装置の型ホルダ−１５上に設置し、エチ
ルエーテル（総量２５０ｃｃ）をバブラーを通して気化
し、ガス導入口１４より真空室１１に水素ガス（流量、
１０１００５ｃｃと共に導入し、直流３０００Ｖ、電極
間距離１５ｍｍ、圧力１００Ｔｏｒｒ、型加熱なしの条
件下、１０分の堆積で２μｍの膜が形成された。成膜中
の型温度は８２０℃〜８４０℃であった。<Example 3> A resist was applied to a convex mold made of alumina with a diameter of 25 mm and a radius of curvature of 45 mm, and a circular resist pattern with a diameter of 0.5 μm was punched out on triangular lattice points with a lattice spacing of 2 μm. 0.3μm with Ar ion beam with acceleration voltage 500eV
It was etched to a depth of . After removing the resist, this mold was placed on a mold holder 15 of a known DC CVD device, ethyl ether (total amount 250 cc) was vaporized through a bubbler, and hydrogen gas (flow rate,
A film of 2 μm was formed in 10 minutes under the conditions of DC 3000 V, electrode distance 15 mm, pressure 100 Torr, and no mold heating. The mold temperature during film formation was 820°C to 840°C.
真空室１１から取りだしたダイヤモンド膜２をコーティ
ングした型１を実施例１と同じ研磨装置５０内の型ホル
ダ−５２に設置した。研磨装置５０内を３Ｘ１０−”Ｔ
ｏｒｒまで排気した後、ガス導入口５８から水素ガスを
ＩＯ３ＣＣＭの流量で研磨装置５０内に導入した。平均
粒径０．５μｍのダイヤモンド粉末を含んだＦｅ板５１
及び型ホルダ−５２を６００ｒｐｍで回転させた。The mold 1 coated with the diamond film 2 taken out from the vacuum chamber 11 was placed in the mold holder 52 in the same polishing device 50 as in Example 1. 3X10-”T inside the polishing device 50
After exhausting the atmosphere to a level of 0.03 m, hydrogen gas was introduced into the polishing apparatus 50 from the gas inlet 58 at a flow rate of IO3CCM. Fe plate 51 containing diamond powder with an average particle size of 0.5 μm
And the mold holder 52 was rotated at 600 rpm.
Ｆｅ板の表面形状は直径５０ｍｍ、曲率半径４５ｍｍの
凹状にした。１０時間研磨した後１表面粗さを測定する
とＲｍａｘ２２０人であった。The surface shape of the Fe plate was a concave shape with a diameter of 50 mm and a radius of curvature of 45 mm. After polishing for 10 hours, the surface roughness was measured and found to be Rmax 220.
型上のダイヤモンド膜をＳＥＭ観察するとダイヤモンド
の粒径は約２μｍで、型上のダイヤモンド膜のラマンス
ペクトルを測定すると、鋭い１３３３ｃｍ−’のピーク
と１５８０ｃｍ−’にブロードなピークが観測された。When the diamond film on the mold was observed using a SEM, the diamond particle size was about 2 μm, and when the Raman spectrum of the diamond film on the mold was measured, a sharp peak at 1333 cm-' and a broad peak at 1580 cm-' were observed.
反射電子線回折ではダイヤモンドのみが観測された。又
、膜中の元素分析では炭素原子以外の元素は見出されな
かった。Only diamond was observed by reflection electron diffraction. Further, elemental analysis in the film did not find any elements other than carbon atoms.
次に、この型を用いて実施例１と全く同様に硝材に軟化
点５ｐ＝６３０℃、ガラス転移点Ｔｇ＝５６５℃のＢＫ
７ （ホーヤ製）を用いてガラスレンズのプレス成形を
行った。Next, using this mold, in exactly the same manner as in Example 1, BK having a softening point of 5p = 630°C and a glass transition point of Tg = 565°C was prepared.
7 (manufactured by Hoya) to press mold a glass lens.
このようにして連続５０００回の成形を行ない１００回
毎に１００個のガラスレンズをサンプリングして表面粗
さを測定したところ、５０００回目の表面粗さの平均は
Ｒｍａｘ２６０人であった。In this way, molding was performed 5000 times in a row, and 100 glass lenses were sampled every 100 times to measure the surface roughness, and the average surface roughness at the 5000th time was Rmax 260.
〈実施例４〉
Ｓｉｎ、からなる直径３５ｍｍ、曲率半径４５ｍｍの凸
状の型を格子間隔３μｍの三角格子点上に直径１μｍの
円形のレジストパターンを抜いた。Ａｕのフォーカスト
イオンビームで０１μｍの深さまでエツチングした。レ
ジスト除去後、この型を公知の１３．６５ＭＨｚの高周
波Ｃ＼ｉＤ装百の型ホルダ−１５上に設置する。次に真
空室１１内の真空度を２Ｘ１０−３Ｔｏｒｒまで引上げ
る。アセトアルデヒド（総量２００ｃｃ）をバブラーを
通して気化し、ガス導入口１４より真空室１１に水素ガ
ス（流量、１０１００５ＣＣと共に導入し、高周波出力
ｓｏｏｗ、電極間距離１５ｍｍ、圧力３０Ｔｏｒｒ、型
加熱なしの条件下、３分の堆積で３μｍの膜が形成され
た。成膜中の型温度は８５０℃〜８７０℃であった。<Example 4> A circular resist pattern of 1 μm in diameter was cut out from a convex mold made of Sin and having a diameter of 35 mm and a radius of curvature of 45 mm on triangular lattice points with a lattice spacing of 3 μm. Etching was performed to a depth of 01 μm using a focused Au ion beam. After removing the resist, this mold is placed on a mold holder 15 of a known 13.65 MHz high frequency C\iD device. Next, the degree of vacuum in the vacuum chamber 11 is raised to 2×10 −3 Torr. Acetaldehyde (total amount 200 cc) was vaporized through a bubbler, and hydrogen gas (flow rate, 101005 cc) was introduced into the vacuum chamber 11 from the gas inlet 14 under conditions of high frequency output soow, interelectrode distance 15 mm, pressure 30 Torr, and no mold heating. A film of 3 μm was formed by deposition for 1 minute.The mold temperature during film formation was 850°C to 870°C.
真空室１１から取りだしたダイヤモンド膜２をコートし
た型１を実施例１の研磨装置５０の真空室を除いた装置
の型ホルダ−５２に設置した。平均粒径１０μｍのダイ
ヤモンド粉末を含んだ水溶液をＦｅ板５１上に流しなが
らＦｅ板５１及び型ホルダ−５２を６００ｒｐｍで回転
させた。Ｆｅ板の表面形状は直径９０ｍｍ、曲率半径４
５ｍｍの凹状にした。２０時間研磨した後、表面粗さを
測定したところＲｍａｘ２７０人であった。The mold 1 coated with the diamond film 2 taken out from the vacuum chamber 11 was placed in the mold holder 52 of the polishing apparatus 50 of Example 1 except for the vacuum chamber. The Fe plate 51 and mold holder 52 were rotated at 600 rpm while flowing an aqueous solution containing diamond powder with an average particle size of 10 μm onto the Fe plate 51. The surface shape of the Fe plate has a diameter of 90 mm and a radius of curvature of 4.
It was made into a concave shape of 5 mm. After polishing for 20 hours, the surface roughness was measured and found to be Rmax 270.
型上のダイヤモンド膜のＳＥＭ像を観察するとダイヤモ
ンド膜の平均粒径は３μｍであった。Observation of the SEM image of the diamond film on the mold revealed that the average grain size of the diamond film was 3 μm.
ラマンスペクトルを測定すると、鋭い１３３３ｃｍ−’
のピークと１５８０ｃｍ−’にブロードなピークが観測
された。反射電子線回折ではダイヤモンドのみが観測さ
れた。アモルファス炭素は粒界部分のみに観測された
次に、この型を用いて実施例１と全く同様に硝材に軟化
点５ｐ＝５９５℃、ガラス転移点Ｔｇ＝５２５℃のに７
（ホーヤ製）を用いてガラスレンズのプレス成形を行っ
た。When we measured the Raman spectrum, we found a sharp 1333 cm-'
A peak at 1580 cm-' and a broad peak at 1580 cm-' were observed. Only diamond was observed by reflection electron diffraction. Amorphous carbon was observed only at grain boundaries.Next, using this mold, a glass material with a softening point of 5p=595°C and a glass transition point of Tg=525°C of 7
(manufactured by Hoya) to press mold a glass lens.
このようにして連続５０００回の成形を行ない１００回
毎に１００個のガラスレンズをサンプリングして表面粗
さを測定したところ、５０００回目の表面粗さの平均は
Ｒｍａｘ２９０人であった。In this way, molding was performed 5000 times in a row, and 100 glass lenses were sampled every 100 times to measure the surface roughness, and the average surface roughness at the 5000th time was Rmax 290.
〈実施例５〉
ＳｉＣ填結体からなる直径５ｍｍの平板の型をイオンビ
ーム装置に設置し、加速電圧１０００ＶのＡｒイオンビ
ームで多結晶ダイヤモンドのターゲットを２０時間スパ
ッタし、ＳｉＣ型表面にダイヤモンドクラスターを埋め
込んだ後、それから格子間隔２μｍの正方格子点上に直
径０゜８μｍの円を敷き詰めたレジストパターンを形成
する。<Example 5> A flat plate mold with a diameter of 5 mm made of SiC packed bodies was placed in an ion beam device, and a polycrystalline diamond target was sputtered for 20 hours using an Ar ion beam with an acceleration voltage of 1000 V to form diamond clusters on the surface of the SiC mold. After embedding, a resist pattern is formed in which circles with a diameter of 0° and 8 μm are laid out on square lattice points with a grid interval of 2 μm.
この型をイオンビーム装置に設置し、加速電圧５００Ｖ
のＡｒイオンビームでレジストの塗布されていない部分
をｌｕｍエツチングする。レジスト除去後、この型を公
知の電子アシストプラズマ装置の型ホルダ−１５上に設
置する。次に、真空室１１内の真空度を２Ｘ１０−”Ｔ
ｏｒｒまで引上げる。This mold was installed in the ion beam device, and the acceleration voltage was set at 50V.
The portions where the resist is not coated are lum etched using an Ar ion beam. After removing the resist, this mold is placed on a mold holder 15 of a known electronically assisted plasma device. Next, the degree of vacuum in the vacuum chamber 11 is set to 2X10-”T.
Raise it to orr.
アダマンタンを加熱昇華し、ガス導入口１４より真空室
１１に導入する。流量１１００５ＣＣで水素を流し、フ
ィラメント温度２１００℃、電極間距離１５ｍｍ、基板
バイアス−２００Ｖ、圧力１３０Ｔｏｒｒの条件下、１
０分間の堆積で２μｍの膜が形成された。成膜中の型、
８度は９００℃〜９１０℃であった。Adamantane is sublimated by heating and introduced into the vacuum chamber 11 through the gas inlet 14. 1 under the conditions of flowing hydrogen at a flow rate of 11,005 CC, filament temperature of 2,100 °C, interelectrode distance of 15 mm, substrate bias of -200 V, and pressure of 130 Torr.
A 2 μm film was formed after 0 minutes of deposition. Mold during film formation,
8 degrees was 900°C to 910°C.
真空室１１から取りだしたダイヤモンド膜２をコートし
た型ｌを実施例１と同じ研磨装置５０内の型ホルダ−５
２に設置した。研磨装置５ｏを３ｘｌＯ−３Ｔｏｒｒま
で排気した後、ガス導入口５８から水素ガスを１１００
５ＣＣの流量で研磨装置５０内に導入した。平均粒径０
．５μｍのダイヤモンド粉末を含んだＦｅ板５１及び型
ホルダ−５２を６０Ｏｒｐｍで回転させた。この時ヒー
ター５９．６０を用いＦｅ板５１を９５０℃に加熱した
。Ｆｅ板の表面形状は直径８０ｍｍの平板状にした。５
時間研磨した後、表面粗さを測定するとＲｍａｘ １９
０人であった。The mold l coated with the diamond film 2 taken out from the vacuum chamber 11 was placed in the mold holder 5 in the same polishing device 50 as in Example 1.
It was installed on 2. After evacuating the polishing apparatus 5o to 3xlO-3 Torr, hydrogen gas is introduced from the gas inlet 58 at 1100
It was introduced into the polishing apparatus 50 at a flow rate of 5 cc. Average particle size 0
．． The Fe plate 51 containing 5 μm diamond powder and the mold holder 52 were rotated at 60 rpm. At this time, the Fe plate 51 was heated to 950° C. using a heater 59.60. The surface shape of the Fe plate was a flat plate with a diameter of 80 mm. 5
After polishing for a period of time, the surface roughness is measured: Rmax 19
There were 0 people.
型上のダイヤモンド膜のラマンスペクトルを測定すると
、鋭い１３３３ｃｍ−’のピークとプロトな１５８０ｃ
ｍ−’のピークが観測された。反射電子線回折ではダイ
ヤモンドのみが観測された。When we measured the Raman spectrum of the diamond film on the mold, we found a sharp peak at 1333cm-' and a proto-1580c peak.
A peak of m-' was observed. Only diamond was observed by reflection electron diffraction.
これらの結果より型上の膜は、ダイヤモンドとアモルフ
ァス状炭素からなることが解った。These results revealed that the film on the mold was composed of diamond and amorphous carbon.
次に、この型を用いて実施例１と全く同様に硝材に軟化
点５ｐ＝４７０℃、ガラス転移点７ｇ＝４２０℃のＫＦ
６ （ホーヤ製）を用いてガラスレンズのプレス成形を
行った。Next, using this mold, in the same manner as in Example 1, a glass material was coated with KF having a softening point of 5p = 470°C and a glass transition point of 7g = 420°C.
6 (manufactured by Hoya) to press mold a glass lens.
このようにして連続５０００回の成形を行ない１００回
毎に１００個のガラスレンズをサンプリングして表面粗
さを測定したところ、５０００回目の表面粗さの平均は
Ｒｍａｘ２１５人であった。In this way, molding was performed 5000 times in a row, and 100 glass lenses were sampled every 100 times to measure the surface roughness, and the average surface roughness at the 5000th time was Rmax 215.
［発明の効果］
以上説明してきた様に炭素含有物質の濃度を高くしかつ
選択的にダイヤモンドを型表面にコートすることによっ
て得られる本発明の光学素子形成用型は、ダイヤモンド
のみからなる膜に比べ、ガラス成形時のガラスとの反応
を抑え、成形品の表面荒さを保証しかつダイヤモンド膜
形成時の堆積速度を２〜３倍速くすることが可能になっ
た。[Effects of the Invention] As explained above, the mold for forming an optical element of the present invention, which is obtained by increasing the concentration of a carbon-containing substance and selectively coating the mold surface with diamond, has a film made only of diamond. In comparison, it has become possible to suppress the reaction with glass during glass molding, ensure the surface roughness of the molded product, and increase the deposition rate during diamond film formation by 2 to 3 times.
第１図は本発明の一例であるダイヤモンド粒子間のみに
アモルファス炭素が存在する形態の模式図、第２図は選
択堆積の一例及び核形成密度の高い領域のバターニング
の例の模式図、第３図及び第４図は本発明に関わる光学
素子の成形用型の一態様を示す断面図で、第３図はプレ
ス成形前の状態、第４図はプレス成形後の状態を示す。
第５図は型母材の表面に多結晶ダイヤモンド膜を被覆す
るマイクロ波ＣＶＤ法装置である。第６図は研磨装置で
ある。第７図は光学素子成形用型を使用するレンズの成
形装置を示す断面図である。
ｌ：型の母材 ２：被覆材
３、ガラス素材 ４：成形されたレンズ５、型母
材 ６：レジスト
７・ダイヤモンドの核 ８：ダイヤモンド９：ダイヤモ
ンド粒子 ｌＯ：アモルファス炭素：排気口
・ガス導入口
・導波管
スリースタブ
１１・真空室
１３：型母材
１５：型ホルダ−
１７：ブランジャー
１９：電源部へ
５０：研磨装置 ５１
５２：型ホルダ−
５３： ５４ ：エアベアリング
５５ ： ５６ ：モータ
５７：排気口
５９．６０．ヒーター
１０２：成形装置
１０４：取入れ用置換室
１０６：成形室
１０８：蒸着室
１１０：取り出し用置換室
１１２．１１４．１１６．ゲ
１１８：レール １２０
１２２、ロッド １２４
１２６：バルブ １２８
５８：ガス導入口
金属板
トバルブ
パレット
・シリンダ
ヒーター
１３０、上型
１３４、１３６
１３８、１４０
１４２：容器
１４６ 蒸着物質
＋５０ シリンダ
１３２：下型
：ロッド
・シリンダ
１４４、ヒーター
１４８・ロッド
バルブFig. 1 is a schematic diagram of an example of the present invention in which amorphous carbon exists only between diamond particles, Fig. 2 is a schematic diagram of an example of selective deposition and an example of buttering in areas with high nucleation density; 3 and 4 are cross-sectional views showing one embodiment of a mold for forming an optical element according to the present invention, with FIG. 3 showing the state before press molding, and FIG. 4 showing the state after press molding. FIG. 5 shows a microwave CVD method apparatus for coating a polycrystalline diamond film on the surface of a mold base material. FIG. 6 shows a polishing device. FIG. 7 is a sectional view showing a lens molding apparatus using an optical element mold. l: Mold base material 2: Covering material 3, glass material 4: Molded lens 5, mold base material 6: Resist 7, diamond core 8: Diamond 9: Diamond particles lO: Amorphous carbon: Exhaust port/gas introduction Mouth/waveguide three stub 11/vacuum chamber 13: Mold base material 15: Mold holder 17: Blunger 19: To power supply section 50: Polishing device 51 52: Mold holder 53: 54: Air bearing 55: 56: Motor 57: Exhaust port 59.60. Heater 102: Molding device 104: Intake replacement chamber 106: Molding chamber 108: Vapor deposition chamber 110: Removal replacement chamber 112.114.116. Ge 118: Rail 120 122, Rod 124 126: Valve 128 58: Gas inlet Metal plate Valve Pallet/Cylinder heater 130, Upper mold 134, 136 138, 140 142: Container 146 Deposition material +50 Cylinder 132: Lower mold: Rod・Cylinder 144, heater 148 ・Rod valve
Claims (8)
おいて、型母材の少なくとも成形面にはダイヤモンド結
晶とアモルファス炭素の共存相からなる膜が被覆されて
いることを特徴とする、光学素子成形用型。(1) An optical element characterized in that, in a mold used for press molding a glass optical element, at least the molding surface of the mold base material is coated with a film consisting of a coexisting phase of diamond crystals and amorphous carbon. Mold for molding.
る、請求項１記載の光学素子成形用型。(2) The mold for molding an optical element according to claim 1, wherein the diamond crystal is a single crystal.
ることを特徴とする、請求項１記載の光学素子成形用型
。(3) The mold for molding an optical element according to claim 1, wherein amorphous carbon exists between diamond crystals.
製造方法において、型母材の少なくとも成形面に気相法
によってダイヤモンド結晶とアモルファス炭素の共存相
を堆積することを特徴とする、光学素子成形用型の製造
方法。(4) A method for manufacturing a mold used for press molding a glass optical element, which comprises depositing a coexisting phase of diamond crystals and amorphous carbon on at least the molding surface of the mold base material by a vapor phase method. A method for manufacturing a mold for molding an element.
ラズマＣＶＤ法、直流プラズマＣＶＤ法、直流アーク熱
プラズマＣＶＤ法、高周波熱プラズマＣＶＤ法、燃焼炎
法、熱フィラメント法または電子アシストプラズマＣＶ
Ｄ法であることを特徴とする、請求項４記載の光学素子
成形用型の製造方法。(5) Gas phase method is microwave plasma CVD method, high frequency plasma CVD method, direct current plasma CVD method, direct current arc thermal plasma CVD method, high frequency thermal plasma CVD method, combustion flame method, hot filament method or electron assisted plasma CV
5. The method for manufacturing a mold for molding an optical element according to claim 4, wherein the method is D method.
積することを特徴とする、請求項４記載の光学素子成形
用型の製造方法。(6) The method for manufacturing a mold for molding an optical element according to claim 4, characterized in that a diamond single crystal is deposited as the diamond crystal.
ることを特徴とする、請求項６記載の光学素子成形用型
の製造方法。(7) The method for manufacturing a mold for molding an optical element according to claim 6, wherein the diamond single crystal is deposited by a selective deposition method.
共存相の表面粗さが光学素子成形用型としての面精度を
十分に満たしていない場合には、型表面を研磨すること
を特徴とする、請求項４ないし７記載の光学素子成形用
型の製造方法。(8) A claim characterized in that when the surface roughness of the coexisting phase of deposited diamond crystals and amorphous carbon does not sufficiently satisfy the surface precision of a mold for molding an optical element, the mold surface is polished. 8. The method for manufacturing a mold for molding an optical element according to 4 to 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14162390A JPH0437619A (en) | 1990-06-01 | 1990-06-01 | Optical element forming die and its production |
| US07/707,782 US5246198A (en) | 1990-06-01 | 1991-05-30 | Diamond crystal coated mold for forming optical elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14162390A JPH0437619A (en) | 1990-06-01 | 1990-06-01 | Optical element forming die and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0437619A true JPH0437619A (en) | 1992-02-07 |
Family
ID=15296345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14162390A Pending JPH0437619A (en) | 1990-06-01 | 1990-06-01 | Optical element forming die and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0437619A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339018A (en) * | 1992-06-08 | 1993-12-21 | Canon Inc | Die for forming optical element |
| JP2003089533A (en) * | 2001-09-14 | 2003-03-28 | Sumitomo Electric Ind Ltd | Molding die for glass lens |
-
1990
- 1990-06-01 JP JP14162390A patent/JPH0437619A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339018A (en) * | 1992-06-08 | 1993-12-21 | Canon Inc | Die for forming optical element |
| JP2003089533A (en) * | 2001-09-14 | 2003-03-28 | Sumitomo Electric Ind Ltd | Molding die for glass lens |
| JP4622197B2 (en) * | 2001-09-14 | 2011-02-02 | 住友電気工業株式会社 | Glass lens mold |
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