JPH04369850A - Total reflection x-ray microdiffractometry - Google Patents
Total reflection x-ray microdiffractometryInfo
- Publication number
- JPH04369850A JPH04369850A JP3146374A JP14637491A JPH04369850A JP H04369850 A JPH04369850 A JP H04369850A JP 3146374 A JP3146374 A JP 3146374A JP 14637491 A JP14637491 A JP 14637491A JP H04369850 A JPH04369850 A JP H04369850A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ray
- diffraction
- crystal
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 230000005469 synchrotron radiation Effects 0.000 claims abstract description 12
- 238000000386 microscopy Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 16
- 230000005855 radiation Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 25
- 230000000694 effects Effects 0.000 description 6
- 230000035515 penetration Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000003963 x-ray microscopy Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、Ｓｉウェハー表面極く
近傍の微小な結晶欠陥を検出するための表面敏感な全反
射Ｘ線回折顕微方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-sensitive total reflection X-ray diffraction microscopy method for detecting minute crystal defects very close to the surface of a Si wafer.
【０００２】0002
【従来の技術】Ｓｉウェハー内に存在する結晶欠陥（例
えば、空孔、格子間原子、転位、積層欠陥、析出、偏析
、表面研磨歪み等）は、半導体デバイス特性に悪影響を
及ぼす。特に、近年の超集積回路に代表される半導体デ
バイスは、高集積化・多層膜化しつつあり、応力集中、
イオン注入、ドライエッチング等の外部要因により新た
な結晶欠陥がＳｉウェハーに発生しやすい環境にある。
これら結晶欠陥は、半導体のバンド構造における禁制体
中に深い準位を形成する傾向にあり、キャリアの生成・
再結合中心となりえる。従来、Ｓｉウェハー内の結晶欠
陥の場所的分布の模様を観察するために様々なＸ線の回
折現象を用いたＸ線回折顕微方法が提案されてきた。し
かしながら、表面極く近傍のＸ線の消衰距離よりも十分
に小さな歪み場しか有しない結晶欠陥の観察に適した方
法は、存在していない。2. Description of the Related Art Crystal defects (eg, vacancies, interstitial atoms, dislocations, stacking faults, precipitation, segregation, surface polishing distortion, etc.) existing in Si wafers have an adverse effect on semiconductor device characteristics. In particular, semiconductor devices such as recent ultra-integrated circuits are becoming more highly integrated and multilayered, resulting in stress concentration,
The environment is such that new crystal defects are likely to occur in Si wafers due to external factors such as ion implantation and dry etching. These crystal defects tend to form deep levels in forbidden bodies in the band structure of semiconductors, causing carrier generation and
It can be a recombination center. Conventionally, X-ray diffraction microscopy methods using various X-ray diffraction phenomena have been proposed in order to observe the pattern of the local distribution of crystal defects within a Si wafer. However, there is no method suitable for observing crystal defects that have a strain field that is sufficiently smaller than the extinction distance of X-rays very close to the surface.
【０００３】0003
【発明が解決しようとする課題】従来のＸ線回折顕微法
装置では、Ｘ線Ｓｉウェハーへの侵入深さが数μｍ程度
と大きく、深さ方向の平均的な情報しか得ることができ
ず、近年の浅い接合において半導体デバイスが要求する
表面極く近傍の結晶欠陥の情報を得ることが不可能であ
るという欠点があった。また、得られた回折像は、完全
性の高い結晶性を有する場合において得られる動力学的
回折効果に基づいているものであり、微小な歪み場を有
する結晶欠陥を観察することは不可能であった。本発明
は、このような従来の欠点を除去せしめて、表面極く近
傍の微小な結晶欠陥をＸ線回折顕微法的に観察するため
の方法を提供することにある。[Problems to be Solved by the Invention] In conventional X-ray diffraction microscopy equipment, the penetration depth of X-rays into a Si wafer is as large as several μm, and only average information in the depth direction can be obtained. In recent years, shallow junctions have had the disadvantage that it is impossible to obtain information on crystal defects very close to the surface, which is required by semiconductor devices. Furthermore, the obtained diffraction image is based on the dynamic diffraction effect obtained when the material has highly perfect crystallinity, and it is impossible to observe crystal defects with minute strain fields. there were. The object of the present invention is to eliminate such conventional drawbacks and provide a method for observing minute crystal defects very close to the surface using X-ray diffraction microscopy.
【０００４】0004
【課題を解決するための手段】本発明の全反射Ｘ線回折
顕微方法は、シンクロトロン放射光の波長の連続性とＳ
ｉ結晶からのブラック回折を有する光学系において、Ｓ
ｉ結晶からの回折ピークの裾の角度位置で回折顕微法的
に撮影する方法である。[Means for Solving the Problems] The total internal reflection X-ray diffraction microscopy method of the present invention achieves wavelength continuity of synchrotron radiation light and S
In an optical system with black diffraction from an i crystal, S
This is a method of photographing using diffraction microscopy at the angular position of the tail of the diffraction peak from the i-crystal.
【０００５】[0005]
【実施例】シンクロトロン放射光は、強力な連続の波長
を有し、回折現象を用いた結晶欠陥評価用のＸ線源とし
て大変有用なものである。本発明は、このシンクロトロ
ン放射光の特徴を有効に利用したものである。EXAMPLE Synchrotron radiation has a powerful continuous wavelength and is very useful as an X-ray source for evaluating crystal defects using diffraction phenomena. The present invention effectively utilizes the characteristics of synchrotron radiation.
【０００６】以下、本発明の実施例について図面を参照
にして詳細に説明する。図１は、本発明による全反射Ｘ
線回折顕微法装置の一実施例を示す図である。符号１１
は、連続光であるシンクロトロン放射光である。このシ
ンクロトロン放射光１１は、スリット１２によってＸ線
ビームサイズを成形された後、Ｓｉの（１１１）面を有
する結晶を設置した２結晶分光器１３によって単色化さ
れる。この単色化されたＸ線１４は、スリット１５によ
ってビームサイズを成形された後、ω−２θ回転可能な
ゴニオメータ１６のヘッドに設置された（１００）Ｓｉ
ウェハー１７に入射する。（１００）Ｓｉウェハー１７
からの回折は、（１００）表面に対して３５．２６°傾
いた格子面である４２２非対称反射を用いる。仮に、２
結晶分光器１３によってシンクロトロン放射光１１から
波長λ＝１．２９Ａを持つＸ線１４を選別し、ω−２θ
回転可能なゴニオメータ１６によって、（１００）Ｓｉ
ウェハー１７をＸ線１４に対して入射角（θＢ −α）
を持つように設置すると、（１００）Ｓｉウェハー１７
の４２２非対称反射による回折線１８を得ることができ
る。ここで、θＢ は回折角度であり３５．５８°を有
し、αは（１００）表面と（４２２）面とのなす角であ
り、前記した３５．２６°の値を有する。そして、Ｘ線
１４の（１００）Ｓｉウェハー１７への入射角は０．３
２°となる。この時、図２において計算された侵入深さ
曲線２１が示すようにＸ線１４の（１００）Ｓｉウェハ
ー１７内への侵入深さは数千Ａ程度となる。２結晶分光
器１３によって選別されたＸ線１４の波長を、２結晶分
光器１３をシンクロトロン放射光１１に対して低角側に
逐次回転することによって僅かに短くすると、４２２非
対称反射面による回折角度θＢ はそれに追従して減少
する。その結果、（１００）Ｓｉウェハー１７からの回
折線１８を見失うことなく、Ｘ線１４の（１００）Ｓｉ
ウェハー１７への入射角を減少させ、ついには全反射を
起こす臨界角θＣ よりも小さくすることが可能である
。これはシンクロトロン放射光の波長連続性とＳｉ結晶
からの非対称反射とを有効に利用したものである。この
操作をＸ線１４の波長がλ＝１．２８４Ａ近傍になるま
で行うと、Ｘ線１４の（１００）Ｓｉウェハー１７への
入射角は０．１３°となり、臨界角θＣ ＝０．１８°
よりも小さくなる。この時、反射率曲線２２が示すよう
にＸ線１４の（１００）Ｓｉウェハー上での反射率は１
近くになり、Ｘ線の場の強度曲線２３が示すようにＸ線
の場の強さも十分大きい。また、侵入深さ曲線２１が示
すようにＸ線１４の（１００）Ｓｉウェハー１８内への
侵入深さは数十Ａ程度となり、表面極く近傍の情報を得
ることができる。このように、（１００）Ｓｉウェハー
１７表面で全反射を起こした条件下で、（１００）Ｓｉ
ウェハー１７からの回折線１８を得ることが出来る。こ
こで、ω−２θ回転可能なゴニオメータ１６によって（
１００）Ｓｉウェハー１７を回折線１８のピークの裾の
角度位置に設置する。この配置では、完全性の高いバル
ク結晶からの動力学的回折強度は、極度に抑えられてお
り、表面極く近傍に存在する微小な結晶欠陥によって生
じる運動学的回折強度が相対的に増大している状況にあ
る。
この様な条件下のもとで、（１００）Ｓｉウェハー１７
の４２２非対称反射による回折線１８を写真フィルム１
９で顕微法的に観察する。[0006] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows the total reflection X according to the present invention.
1 is a diagram showing an example of a line diffraction microscopy apparatus. code 11
is continuous synchrotron radiation light. This synchrotron radiation light 11 is shaped into an X-ray beam size by a slit 12, and then monochromated by a two-crystal spectrometer 13 equipped with a Si crystal having a (111) plane. This monochromated X-ray 14 is shaped into a beam size by a slit 15, and then placed in the head of a (100) Si rotatable goniometer 16.
The light is incident on the wafer 17. (100) Si wafer 17
The diffraction from the 422 asymmetric reflection, which is a lattice plane tilted 35.26° to the (100) surface, is used. If, 2
X-rays 14 with a wavelength λ=1.29A are selected from the synchrotron radiation 11 by a crystal spectrometer 13, and
The rotatable goniometer 16 allows (100)Si
Incident angle (θB −α) of the wafer 17 with respect to the X-ray 14
(100) Si wafer 17
Diffraction lines 18 due to 422 asymmetric reflections can be obtained. Here, θB is the diffraction angle and has a value of 35.58°, and α is the angle formed by the (100) surface and the (422) surface and has the above-mentioned value of 35.26°. The incident angle of the X-ray 14 on the (100) Si wafer 17 is 0.3
It becomes 2°. At this time, as shown by the calculated penetration depth curve 21 in FIG. 2, the penetration depth of the X-rays 14 into the (100) Si wafer 17 is approximately several thousand amps. When the wavelength of the X-rays 14 selected by the two-crystal spectrometer 13 is slightly shortened by sequentially rotating the two-crystal spectrometer 13 toward a lower angle with respect to the synchrotron radiation 11, diffraction by the asymmetric reflection surface 422 occurs. The angle θB decreases accordingly. As a result, without losing sight of the diffraction line 18 from the (100) Si wafer 17, the (100) Si
It is possible to reduce the angle of incidence on the wafer 17 until it becomes smaller than the critical angle θC at which total internal reflection occurs. This effectively utilizes the wavelength continuity of synchrotron radiation and the asymmetric reflection from the Si crystal. If this operation is carried out until the wavelength of the X-ray 14 becomes around λ = 1.284A, the incident angle of the X-ray 14 to the (100) Si wafer 17 becomes 0.13°, and the critical angle θC = 0.18°.
becomes smaller than At this time, as shown by the reflectance curve 22, the reflectance of the X-ray 14 on the (100) Si wafer is 1
As the X-ray field strength curve 23 shows, the X-ray field strength is also sufficiently large. Further, as shown by the penetration depth curve 21, the penetration depth of the X-ray 14 into the (100) Si wafer 18 is approximately several tens of amps, making it possible to obtain information very close to the surface. In this way, under the condition that total reflection occurs on the surface of the (100) Si wafer 17, the (100) Si
A diffraction line 18 from the wafer 17 can be obtained. Here, (
100) Place the Si wafer 17 at the angular position of the tail of the peak of the diffraction line 18. In this arrangement, the kinetic diffraction intensity from the highly perfect bulk crystal is extremely suppressed, and the kinetic diffraction intensity caused by minute crystal defects existing very close to the surface is relatively increased. I am in a situation where I am Under these conditions, (100) Si wafer 17
Diffraction line 18 due to 422 asymmetric reflection of photographic film 1
Observe microscopically in step 9.
【０００７】本発明は、（１００）表面に対して２５．
２４°傾いた格子面である３１１非対称反射を用いても
同様な効果を発揮する。前記した手順を用いて、最終的
にシンクロトロン放射光１１より１．４０４Ａ近傍の波
長を選別すると、Ｘ線１４の（１００）Ｓｉウェハー１
７への入射角は、０．１５°となり、臨界角０．２０°
より小さくなる。その結果、（１００）Ｓｉウェハー１
７表面で全反射を起こした条件下で、（１００）Ｓｉウ
ェハー１７からの回折線１８を得ることが出来る。ここ
で、ω−２θ回転可能なゴニオメータ１６によって（１
００）Ｓｉウェハー１７を回折線１８のピークの裾の角
度位置に設置し、写真フィルム１９によって回折顕微法
的に撮影すれば、表面極く近傍に存在する微小な結晶欠
陥を観察することが出来る。[0007] The present invention provides a 25.
A similar effect can be achieved using 311 asymmetric reflection, which is a lattice plane tilted by 24°. Using the procedure described above, when a wavelength near 1.404A is finally selected from the synchrotron radiation 11, the (100) Si wafer 1 of the X-ray 14 is selected.
The angle of incidence on 7 is 0.15°, and the critical angle is 0.20°.
become smaller. As a result, (100) Si wafer 1
Diffraction lines 18 from the (100) Si wafer 17 can be obtained under conditions where total reflection occurs on the surface of the (100) Si wafer 17. Here, (1
00) If the Si wafer 17 is placed at the angular position of the tail of the peak of the diffraction line 18 and photographed by diffraction microscopy using the photographic film 19, minute crystal defects existing very close to the surface can be observed. .
【０００８】本発明は、（１００）表面に対して、〈１
００〉方向に４°傾けられた表面を有するＳｉエピタキ
シャル結晶に対しても同様な効果を発揮する。この場合
、４°傾けられた〈１００〉方向と垂直な０８４面によ
る非対称反射を用いるのが有効である。前記した手順を
用いて、最終的にシンクロトロン放射光１１より、１．
０８６Ａ近傍の波長を選別し、Ｘ線１４のＳｉエピタキ
シャル結晶への入射角を、臨界角０．１５６°以下にし
、回折線１８のピークの裾の角度位置で回折顕微法的に
撮影すれば、表面極く近傍に存在する微小な結晶欠陥を
観察することが出来る。[0008] The present invention provides for the (100) surface with <1
A similar effect is exerted on a Si epitaxial crystal having a surface tilted by 4° in the 00> direction. In this case, it is effective to use asymmetric reflection by the 084 plane tilted by 4 degrees and perpendicular to the <100> direction. Using the procedure described above, the synchrotron radiation 11 is finally used to obtain 1.
If the wavelength near 086A is selected, the angle of incidence of the X-ray 14 on the Si epitaxial crystal is set to below the critical angle of 0.156°, and the image is photographed by diffraction microscopy at the angular position of the tail of the peak of the diffraction line 18, It is possible to observe minute crystal defects that exist very close to the surface.
【０００９】[0009]
【発明の効果】以上説明したように本発明によれば、表
面から数十Ａという極く近傍に存在する微小な結晶欠陥
をＸ線顕微法的に観察可能であり、これら結晶欠陥と半
導体デバイス特性の劣化との対比に有効な効果を有する
。Effects of the Invention As explained above, according to the present invention, it is possible to observe minute crystal defects existing in the extremely close vicinity of several tens of amps from the surface using X-ray microscopy, and it is possible to observe these crystal defects and semiconductor devices. This has an effective effect in contrast with deterioration of characteristics.
【図１】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】本発明における条件下での計算結果である。FIG. 2 shows calculation results under the conditions of the present invention.
Claims (1)
とＳｉ結晶からの非対称反射とから構成された全反射条
件下でのＳｉ結晶からのブロック回折を有する光学系に
おいて、Ｓｉ結晶から回折ピークの裾の角度位置で撮影
する全反射Ｘ線回折顕微方法。Claim 1: In an optical system having block diffraction from the Si crystal under total internal reflection conditions consisting of wavelength continuity of synchrotron radiation light and asymmetric reflection from the Si crystal, the diffraction peak from the Si crystal is A total internal reflection X-ray diffraction microscopy method that takes images at the angular position of the hem.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3146374A JP2967609B2 (en) | 1991-06-19 | 1991-06-19 | Total reflection X-ray diffraction microscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3146374A JP2967609B2 (en) | 1991-06-19 | 1991-06-19 | Total reflection X-ray diffraction microscopy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04369850A true JPH04369850A (en) | 1992-12-22 |
| JP2967609B2 JP2967609B2 (en) | 1999-10-25 |
Family
ID=15406273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3146374A Expired - Fee Related JP2967609B2 (en) | 1991-06-19 | 1991-06-19 | Total reflection X-ray diffraction microscopy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2967609B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010269130A (en) * | 2009-04-24 | 2010-12-02 | Toshiba Corp | Magnetic resonance imaging apparatus and rf coil |
-
1991
- 1991-06-19 JP JP3146374A patent/JP2967609B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010269130A (en) * | 2009-04-24 | 2010-12-02 | Toshiba Corp | Magnetic resonance imaging apparatus and rf coil |
| US8773131B2 (en) | 2009-04-24 | 2014-07-08 | Kabushiki Kaisha Toshiba | Magnetic resonance imaging apparatus and RF coil |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2967609B2 (en) | 1999-10-25 |
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