JPH0436718A - Optical shutter array and production thereof - Google Patents
Optical shutter array and production thereofInfo
- Publication number
- JPH0436718A JPH0436718A JP12125190A JP12125190A JPH0436718A JP H0436718 A JPH0436718 A JP H0436718A JP 12125190 A JP12125190 A JP 12125190A JP 12125190 A JP12125190 A JP 12125190A JP H0436718 A JPH0436718 A JP H0436718A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- shutter array
- electrode
- optical shutter
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 29
- 239000007772 electrode material Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 238000007733 ion plating Methods 0.000 claims abstract 2
- 230000000694 effects Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 1
- 229940072033 potash Drugs 0.000 abstract 1
- 235000015320 potassium carbonate Nutrition 0.000 abstract 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 abstract 1
- 230000004936 stimulating effect Effects 0.000 abstract 1
- BYGOPQKDHGXNCD-UHFFFAOYSA-N tripotassium;iron(3+);hexacyanide Chemical compound [K+].[K+].[K+].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] BYGOPQKDHGXNCD-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000005422 blasting Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910008253 Zr2O3 Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光シャッタアレイ及びその製造方法に関する
。更に詳述すると、本発明は電気光学効果を利用した光
シャッタアレイとその製法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical shutter array and a manufacturing method thereof. More specifically, the present invention relates to an optical shutter array that utilizes electro-optic effects and a method for manufacturing the same.
〈従来の技術）
電気光学効果として、印加電界に対して媒質の複屈折が
変化する現象が知られている。そして、この現象を利用
し、印加する電界を制御することによって媒質に光の透
光・遮光動作を行なわせるようにした光シャッタアレイ
が従来提案されている。この光シャッタアレイは、板状
の電気光学効果を有する物質例えばＰＬＺＴに薄型電極
をくし歯状に配置し、個々の電極にかかる電圧を制御し
てＰＬＺＴに所定の電界を印加するようにしたものであ
る。電極１０１は、従来、アルミ蒸着とエツチング処理
によってＰＬＺＴ１０２の表面即ち光透過方向と直交す
る面１０２Ｃ，１０２Ｄに形成されている。(Prior Art) A phenomenon in which the birefringence of a medium changes in response to an applied electric field is known as an electro-optic effect. Conventionally, an optical shutter array has been proposed that utilizes this phenomenon and allows a medium to transmit and block light by controlling the applied electric field. This optical shutter array is made by arranging thin electrodes in a comb shape on a plate-shaped electro-optical material such as PLZT, and applying a predetermined electric field to the PLZT by controlling the voltage applied to each electrode. It is. The electrodes 101 are conventionally formed on the surfaces 102C and 102D of the PLZT 102, that is, the surfaces 102C and 102D perpendicular to the light transmission direction, by aluminum vapor deposition and etching.
例えば、第５図（Ａ）に示すようにＰＬＺＴ１０２の光
透過方向と直交する一方の面１０２Ｃに取付けたり、第
５図（Ｂ ） Ｃ−：示すようにＰＬＺＴ１０２の両面
１０２Ｃ，１０２０に取付けたり（特開昭６２−４２１
２０号）、第５図（Ｃ）に示すようにＰＬＺＴ１０２に
溝加工を施してＰＬ、Ｚｒ２Ｏ３の深さ方向即ち光透過
方向に電［ｉ １０１を一部埋め込むようにして取付け
られている。For example, as shown in FIG. 5(A), it may be attached to one surface 102C of the PLZT 102 perpendicular to the light transmission direction, or it may be attached to both surfaces 102C, 1020 of the PLZT 102 as shown in FIG. Japanese Patent Publication No. 62-421
No. 20), as shown in FIG. 5(C), the PLZT 102 is grooved to embed part of the electric wire 101 in the depth direction of the PL and Zr2O3, that is, in the light transmission direction.
しかしながら、電気光学効果を有する物質１０２の光透
過方向と直交する表面１０２Ｃ，１０２０に電極１０１
が形成されている場合、物質内部で均一に電気光学効果
が起こり難いため、駆動電圧を高くしなくてはならない
、また、電極の一部を物質１０２内に埋め込む場合、狭
隘な漬１０３を加工することが困誼であるし、この溝加
工のためＰＬＺＴ１０２の機械的強度が劣るという問題
がある。更に、上述の従来のシャッタアレイは、電気光
学効果を有する物質１０２上に電極１０１のリード部分
１０４も形成しているなめ、実際のシャッタ部分よりも
広いものが必要となり、コスト高となる。However, the electrodes 101 are located on the surfaces 102C and 1020 perpendicular to the light transmission direction of the substance 102 having an electro-optic effect.
is formed, it is difficult for the electro-optic effect to occur uniformly inside the material, so the driving voltage must be increased. Also, when embedding a part of the electrode in the material 102, it is difficult to process the narrow dip 103. It is difficult to do so, and there is a problem that the mechanical strength of the PLZT 102 is inferior due to this groove processing. Further, in the conventional shutter array described above, since the lead portion 104 of the electrode 101 is also formed on the material 102 having an electro-optic effect, it needs to be wider than the actual shutter portion, resulting in high cost.
そこで、本発明者らは、電気光学効果素子の光の透過方
向に平行な面に個別ｔ ’Ｉｆｉと共通電極とを形成す
ると共にこれら′！４極を支持部材と電気光学効果素子
との間で挾みつけ、電気光学効果素子の光の透過方向と
直交する方向に電界を印加し、電気光学効果が厚み方向
に均一に現れるようにすることを考えるに至った。Therefore, the present inventors formed individual t'Ifi and a common electrode on a plane parallel to the light transmission direction of the electro-optic effect element, and these '!'! The four poles are sandwiched between the support member and the electro-optic effect element, and an electric field is applied in a direction perpendicular to the light transmission direction of the electro-optic effect element so that the electro-optic effect appears uniformly in the thickness direction. I came to think about it.
（発明が解決しようとする課題）
しかしながら、上述の構造の光シャッタアレイを作製す
るとき、ＰＬＺＴ基板と支持材を接合する工程において
、ボンディング（接合）材料としてガラスを用いた場合
、接合温度（作業温度）が６００’Ｃ以上と高く、某ｆ
ｆ［ｉｉ７路の電極を作製するときの主な材料であるＡ
Ｉ（アルミニウム）およびＡ１合金は、酸化のため埋込
電極として使用が難しい、更に、ＡＩおよびＡ１合金は
線膨張係数（約２０Ｘ １０−’／”Ｃ）がＰＬｚＴの
それ（５，４ｘ１０−’／”Ｃ）と大きく興なるため、
クラックやひび割れが発生し易い。(Problem to be Solved by the Invention) However, when manufacturing an optical shutter array having the above structure, when glass is used as a bonding material in the process of bonding the PLZT substrate and the supporting material, the bonding temperature (work Temperature) is as high as 600'C or more, and a certain f.
f[ii A is the main material when making 7-way electrodes.
I (aluminum) and A1 alloys are difficult to use as buried electrodes due to oxidation. Furthermore, AI and A1 alloys have a linear expansion coefficient (approximately 20X 10-'/"C) that is lower than that of PLzT (5,4x10-' /”C),
Cracks and cracks are likely to occur.
本発明は安価でかつ低駆動電圧によって確実に作動し、
更にクラックの発生や導電不良を招くことがない光シャ
ッタアレイ及びその製造方法を提供することを目的とす
る。The invention is inexpensive and operates reliably with low drive voltages;
Another object of the present invention is to provide an optical shutter array that does not cause cracks or poor conductivity, and a method for manufacturing the same.
（課題を解決するための手段）
かかる目的を達成するため、本発明の光シヤツターアレ
イは、電極材料としてＮｏ、Ｍｏ合金、Ｗ、Ｃｒ、Ｔａ
のいずれかを使用するようにしている。(Means for Solving the Problems) In order to achieve the above object, the optical shutter array of the present invention uses No, Mo alloy, W, Cr, Ta as electrode materials.
I'm trying to use one of these.
また、本発明の光シヤツターアレイは、電気光学効果を
有する基板と、前記基板の光透過方向と平行な一方の面
に設けられた複数の個別電極と、前記一方の面と平行な
前記基板の他方の面に設けられた共通電極と、前記個別
電極を前記基板との間で挾む支持部材と、前記支持部材
上に設けられて前記各個別電極に個々に接続されている
端子電極とから成り、更に前記個別ｉＳ極と前記共通電
極はＭｏ、Ｍｏ合金、Ｗ、Ｃｒ、Ｔａのいずれかによっ
て入射光に対しほぼ平行となるよう設けられ、かつ端子
電極が上記入射光に対しほぼ直交するように設けられて
いる。Further, the optical shutter array of the present invention includes a substrate having an electro-optic effect, a plurality of individual electrodes provided on one surface of the substrate parallel to the light transmission direction, and the substrate parallel to the one surface. a common electrode provided on the other surface of the board; a support member sandwiching the individual electrodes between the substrate; and terminal electrodes provided on the support member and individually connected to each of the individual electrodes; Further, the individual iS poles and the common electrode are made of Mo, Mo alloy, W, Cr, or Ta and are provided so as to be substantially parallel to the incident light, and the terminal electrode is substantially perpendicular to the incident light. It is set up to do so.
これら光シヤツターアレイの製造にあたっては、Ｍｏ、
Ｍｏ合金、Ｗ、Ｃｒ、Ｔａのいずれかの電極材料をイオ
ンブレーティングあるいはスパッタリングによって電気
光学効果を有する基板上に薄膜として形成するようにし
ている。In manufacturing these optical shutter arrays, Mo,
An electrode material such as Mo alloy, W, Cr, or Ta is formed as a thin film on a substrate having an electro-optic effect by ion blasting or sputtering.
（作用）
ＭｏまたはＭｏ合金等は耐熱性がありかつ線膨張係数が
ＰＬＺＴのそれと極めて近いため、ガラスを用いたボン
ディング作業時等において酸化したり、クラックやひび
割れを起こす原因とならない、また、このＭＯ等の高融
点金属は通常の真空蒸着法では凝集作用があり比較的厚
い薄膜を形成することが離しいが、イオンブレーティン
グあるいはスパッタリングの薄膜形成過程においてはプ
ラズマイオンによる応力の緩和がなされ、膜厚１−以上
の薄膜の形成が可能となる。(Function) Mo or Mo alloy etc. is heat resistant and has a coefficient of linear expansion very close to that of PLZT, so it does not cause oxidation or cracks during bonding work using glass. High-melting point metals such as MO have agglomeration effects in ordinary vacuum evaporation methods, making it difficult to form a relatively thick thin film, but in the thin film formation process of ion blasting or sputtering, stress is relaxed by plasma ions. It becomes possible to form a thin film with a thickness of 1 or more.
（実施例）
以下、本発明の構成を図面に示す実施例に基づいて詳細
に説明する。(Example) Hereinafter, the configuration of the present invention will be described in detail based on an example shown in the drawings.
第１図（Ａ）及び第１図（Ｂ）に本発明の光シャッタア
レイの一実施例を示す、この実施例は二組のシャッタア
レイ１，１を、それらの共通電極４同士が向い合せにな
るように背中合せに接合して１つのブロックとしたもの
である。１組のシャッタアレイ１は、電気光学効果を有
する物質から成る基板２と、基板２の光の通過方向と平
行な一方の面２Ａに設けられた複数の個別電極３．・・
・３と、基板２の前記一方の面２Ａと平行な他方の面２
Ｂに設けられた共通電極４と、個別電極３゜・・・ ３
を基板２との間で挾む支持部材５と、この支持部材５上
に設けられて各個別電極３．・・・、３に個々に接続さ
れている端子ｔ ｉｉ ６ 、・・・１６とから構成さ
れている。そして、この二組のシャッタアレイ１．１は
、向い合う各共通電極４，４の間および各個別電極４と
支持部材５との間に５ｉ０２及び低融点ガラスの接着剤
を兼ねた絶縁層８，９が形成されて１つのブロックを構
成するように固められている。FIG. 1(A) and FIG. 1(B) show an embodiment of the optical shutter array of the present invention. In this embodiment, two sets of shutter arrays 1, 1 are arranged so that their common electrodes 4 face each other. They are joined back to back to form one block. One set of shutter arrays 1 includes a substrate 2 made of a substance having an electro-optic effect, and a plurality of individual electrodes 3. provided on one surface 2A of the substrate 2 parallel to the light passing direction.・・・
・3 and the other surface 2 parallel to the one surface 2A of the substrate 2
A common electrode 4 provided at B and individual electrodes 3゜... 3
a support member 5 which is sandwiched between the substrate 2 and the individual electrodes 3 . . . , 3, and terminals t ii 6 , . These two sets of shutter arrays 1.1 have an insulating layer 5i02 and an insulating layer 8 which also serves as a low melting point glass adhesive between each of the common electrodes 4, 4 facing each other and between each individual electrode 4 and the support member 5. , 9 are formed and consolidated to form one block.
また、個別な極３．・・・、３は、一方の支持部材５側
の個別な極３．・・・、３が他方の支持部材５１１！ｌ
の個別電極３．・・・、３の間にそれぞれ位置するよう
に千鳥状に配置されている６個別電極３．・・・３は、
本実施例の場合、一定の幅で等間隔に配置されるが、特
にこの幅及び間隔に限定されるものではなく、必要に応
じてその幅及び間隔は設定される。Also, individual pole 3. ..., 3 are individual poles 3. on one support member 5 side. ..., 3 is the other support member 511! l
Individual electrodes 3. . . , 6 individual electrodes arranged in a staggered manner so as to be located between 3. ...3 is,
In the case of this embodiment, they are arranged at regular intervals with a constant width, but the width and interval are not particularly limited to this, and the width and interval can be set as necessary.
前記個別電極３．・・・、３には対応する端子電極６、
・・・、６がそれぞれ支持部材５上に形成されて接続さ
れ、各個別電極を個々に制御し得るように設けられてい
る。また、低融点ガラス・５ｉ０２等の接着剤８を介し
て接合された共通電極４．４には一本の端子電極７が同
時に接続されている。The individual electrodes3. ..., 3 has a corresponding terminal electrode 6,
. . , 6 are formed on the support member 5 and connected to each other so that each individual electrode can be individually controlled. Further, one terminal electrode 7 is simultaneously connected to the common electrode 4.4, which is bonded via an adhesive 8 such as low melting point glass 5i02.
個別電極３．・・・、３と端子電極６．・・・、６の接
続は、個別電極３．・・・、３の端部を基板２と支持部
材５との間に露出させその上に直接端子電極６゜・・・
１６を形成することによって行なわれている。Individual electrode 3. ..., 3 and terminal electrode 6. . . , 6 are connected to individual electrodes 3. ..., the end of 3 is exposed between the substrate 2 and the support member 5, and a terminal electrode 6° is directly placed thereon.
This is done by forming 16.
共通電極４．４と端子電極７との接続も同様である。尚
、電極材料としてはＭｏ（モリブデン）あるいはＭｏ合
金が使用され、所望の形状及び厚みにイオンブレーティ
ングあるいはスパッタリングによって形成されている０
ＭｏのＩＳＩ＃張係数は５゜１Ｘ１０−’／”Ｃ５Ｍｏ
Ｔａ （４０，６０）合金の線膨張（ＪＲハ５．５ ｘ
１０−’／℃テｈ ’）、ＰＬＺＴ基板２の線膨張係
数５．４ ｘｌｏ−’／”Ｃと近似している。また、共
通電極４は図示の如く基板２の他方の面２Ｂの全面に亙
る１本の電極とせず、個別電極３．・・・３に対応する
複数の電極として形成しても良い。The same applies to the connection between the common electrode 4.4 and the terminal electrode 7. Note that Mo (molybdenum) or Mo alloy is used as the electrode material, and the electrode is formed into a desired shape and thickness by ion blasting or sputtering.
The ISI# tensile coefficient of Mo is 5゜1X10-'/”C5Mo
Linear expansion of Ta (40,60) alloy (JR Ha5.5 x
The coefficient of linear expansion of the PLZT substrate 2 is 5.4 Instead of forming one electrode covering the individual electrodes 3..3, a plurality of electrodes corresponding to the individual electrodes 3..3 may be formed.
上述の個別電極３及び共通電［！４を構成する電極材料
としては、上述のＭＯあるいはＭｏ合金の他、Ｗ（タン
グステン：α＝４．５ Ｘ１０−’／’Ｃ）、Ｃｒ（ク
ロム： ａ＝６．５ ｘｌｏ−’／’Ｃ） 、Ｔａ （
タンタル：α−６，５Ｘ １０−’／”Ｃ）も使用可能
である。The above-mentioned individual electrode 3 and common electrode [! In addition to the above-mentioned MO or Mo alloy, electrode materials constituting 4 include W (tungsten: α=4.5 x10-'/'C) and Cr (chromium: a=6.5 xlo-'/'C). ), Ta (
Tantalum: α-6,5X 10-'/''C) can also be used.
また、Ｍｏ合金としては好ましくはＭ Ｏ−Ｔ ａ合金
で、Ｔａの添加量は１０〜９０重量％、最も好ましくは
６０重量％である。Further, the Mo alloy is preferably a MO-Ta alloy, and the amount of Ta added is 10 to 90% by weight, most preferably 60% by weight.
電気光学効果を有する基板２は、印加電界に対して複屈
折が変化する現象を呈する媒質であり、例えばＰＬＺＴ
の使用が好適である。ＰＬＺＴは（Ｐｂ、Ｌａ）（Ｚｒ
、Ｔｆ）Ｏｓの化学式で表わされるセラミックスで、光
シヤツタ用としては例えばＰＬＺＴ９／６５／３５が一
般的である。The substrate 2 having an electro-optic effect is a medium exhibiting a phenomenon in which birefringence changes in response to an applied electric field, such as PLZT.
It is preferable to use PLZT is (Pb, La) (Zr
, Tf)Os, and for example, PLZT9/65/35 is commonly used for optical shutters.
このＰＬＺＴは透過率が高く大きな電気光学係数を有し
、応答速度が速く可動部がない等の高速光シャッタとし
て有利な条件を備えている。また、支持部材５としては
通常セラミックスが使用可能であるが、特にこれに限定
されるものではなくガラス等でも良い。This PLZT has high transmittance, a large electro-optic coefficient, a fast response speed, and no moving parts, making it advantageous as a high-speed optical shutter. Furthermore, although ceramics can usually be used as the support member 5, the support member 5 is not particularly limited to this, and glass or the like may also be used.
第３図に他の実施例を示す、この実施例の光シャッタア
レイは、第１図のものとは個別電極３・・・ ３が基板
２の光通過方向と平行な面２Ａに形成された複数の溝部
１５．・・・、１５に導電性金属を埋め込んで形成した
埋込電極である点で異なる。Another embodiment of the optical shutter array shown in FIG. 3 is different from that of FIG. 1 in that individual electrodes 3...3 are formed on a surface 2A of the substrate 2 parallel to the light passing direction. A plurality of grooves 15. . . , differs in that it is a buried electrode formed by burying conductive metal in 15.
この光シャッタアレイの場合、個別電極形成後の基板２
の表面即ち基板２の光透過方向と平行な一方の面２Ａが
平坦化され、その上に被覆形成される絶縁層９の表面が
凹凸になることが防止され、支持部材５側との接着時に
おける接着むらの発生、接着後の基板２中の応力分布の
発生等が防止される。In the case of this optical shutter array, the substrate 2 after forming individual electrodes
That is, one surface 2A of the substrate 2 parallel to the light transmission direction is flattened, and the surface of the insulating layer 9 coated thereon is prevented from becoming uneven, and when bonded to the supporting member 5 side. This prevents the occurrence of uneven adhesion, stress distribution in the substrate 2 after adhesion, etc.
以上のように構成されたシャッタアレイによれば、次の
ように光シャッタとして作動する。The shutter array configured as described above operates as an optical shutter as follows.
光シャッタの原理を第４図に示す、第４図において、１
１０は偏光子、１１１は検光子、１はシャッタアレイ、
１１３は電源、１１４は光源、１１５はスイッチである
。光源１１４から入射した光は、偏光子１１０により直
線偏光となり、シャッタアレイ１に導入される。ここで
、シャッタアレイ１に電圧が印加されない場合、ＰＬＺ
Ｔ２は光学的等方体であるため、光は検光子１１１によ
って遮られ光はオフ状態になる。また、シャッタアレイ
１に電圧を印加すると、ＰＬＺＴ２は光学的異方性を示
すため、光の透過に伴って偏光面が回転し、検光子１１
１に到達した光は、印加電圧に応じて楕円偏光、あるい
は直線偏光となる。ここで、作動電圧としていわゆる半
波長電圧を印加すると、丁度、半波長位相がずれるため
光は９０”回転し、直線状偏光となって検光子１１１を
通過するので、最大の出力光強度が得られる。The principle of the optical shutter is shown in Figure 4. In Figure 4, 1
10 is a polarizer, 111 is an analyzer, 1 is a shutter array,
113 is a power source, 114 is a light source, and 115 is a switch. The light incident from the light source 114 becomes linearly polarized light by the polarizer 110 and is introduced into the shutter array 1. Here, if no voltage is applied to the shutter array 1, PLZ
Since T2 is an optically isotropic body, the light is blocked by the analyzer 111 and the light is turned off. Furthermore, when a voltage is applied to the shutter array 1, since PLZT2 exhibits optical anisotropy, the plane of polarization rotates as the light passes through, causing the analyzer 11 to rotate.
The light that reaches 1 becomes elliptically polarized light or linearly polarized light depending on the applied voltage. When a so-called half-wave voltage is applied as the operating voltage, the phase of the light shifts by exactly half a wavelength, so the light rotates by 90'' and passes through the analyzer 111 as linearly polarized light, so that the maximum output light intensity can be obtained. It will be done.
そこで、スイッチ１０５の操作によって、任意の個別電
極３．・・・、３と共通電極４との間に所定の電圧を印
加して電界を形成すれば、それらの間のＰＬＺＴ２が複
屈折を起し、シャッタとして動作する０例えば第１図（
Ａ）において上側の右端の個別電極３と共通な極４との
間に電界を加えると、それらの間のＰＬＺＴ２のシャッ
タ部分Ａ−１が動作し光を通過させる。尚、図中符号Ａ
−４，Ａ−２゜・・・、Ａ−Ｎはシャッタ部を示す。Therefore, by operating the switch 105, any individual electrode 3. . . . When a predetermined voltage is applied between the common electrode 4 and the PLZT 2 to form an electric field, the PLZT 2 between them causes birefringence and operates as a shutter. For example, as shown in FIG.
In A), when an electric field is applied between the individual electrode 3 at the upper right end and the common pole 4, the shutter portion A-1 of the PLZT 2 between them operates to allow light to pass through. In addition, the symbol A in the figure
-4, A-2°..., A-N indicate the shutter section.
次に上述の構成の光シャッタアレイの製造方法について
説明する。Next, a method for manufacturing the optical shutter array having the above configuration will be described.
まず、Ｐ Ｌ Ｚ Ｔ基板２の光の透過方向と平行な一
方の面２ＡにＭｏまたはＭｏ合金から成る電極材料を高
周波励起イオンブレーティング法によって全面に固着さ
せ、一定厚さの薄膜１０を形成する［第２図（Ａ）］、
電極材料としてはＭＯあるいはＭｏ合金が使用されてい
る。しかし、このＭＯおよびＭｏ合金は高融点金属であ
るため、通常の真空蒸着法では、凝集作用があり、３０
０ ｎ１以上の薄膜を形成することができない、そこで
、高周波励起式イオンブレーティング法あるいはスパッ
タリングを用いて、薄膜を形成する。この方法によると
、薄膜形成過程においてプラズマイオンによる応力の緩
和がなされることか多く、膜厚１四以上の薄膜が期待で
きる。本発明者らによる実験では作業条件を選定し検討
を重ねた結果、Ｍｏ。First, an electrode material made of Mo or Mo alloy is fixed to the entire surface of one surface 2A of the P L Z T substrate 2 parallel to the light transmission direction using a high frequency excited ion blating method to form a thin film 10 with a constant thickness. [Figure 2 (A)]
MO or Mo alloy is used as the electrode material. However, since MO and Mo alloys are high-melting point metals, they tend to agglomerate when used in normal vacuum evaporation methods.
It is not possible to form a thin film of 0 n1 or more, so a thin film is formed using a high frequency excited ion blating method or sputtering. According to this method, stress is often relaxed by plasma ions during the thin film formation process, and a thin film with a thickness of 14 mm or more can be expected. In experiments conducted by the present inventors, as a result of selecting working conditions and conducting repeated studies, Mo.
Ｍｏ合金ともＰＬＺＴ基板２上に膜厚１四以上の＃膜を
形成できた。For both Mo alloys, # films with a thickness of 14 or more could be formed on the PLZT substrate 2.
この手法で形成されたＭＯあるいはＭｏ合金の薄ｍｉｏ
をストライプ状に加工して個別型ｔｌｉ３を作製するた
め、通常のフォトリングラフィ工程によりレジストを形
成し、その後赤血塩を主成分としたエッチャントでエツ
チングを行う。例えばポジ型フォトレジストを電極材薄
１１１１０の上に塗布し、電極材を必要としない箇所だ
けに光が照射されるようにフォトマスクを通して紫外線
を照射し、現像液により感光剤を取り除いて、残った感
光剤を保護膜にして赤血塩を主成分としたエッチャント
でエツチングを行い、電極材１０を部分的に取除く。そ
の後、感光剤は除去される。Thin MO or Mo alloy formed by this method
In order to fabricate the individual type tli3 by processing the resist into stripes, a resist is formed by a normal photolithography process, and then etching is performed using an etchant containing red blood salt as a main component. For example, a positive photoresist is coated on a thin electrode material 11110, ultraviolet rays are irradiated through a photomask so that the light is irradiated only on areas where the electrode material is not needed, and the photosensitive agent is removed with a developer, and the remaining Using the photosensitive agent as a protective film, etching is performed using an etchant containing red blood salt as a main component, and the electrode material 10 is partially removed. The photosensitizer is then removed.
尚、個別電極の作製は、上述の手法に特に限られるもの
ではなく、第３図に示すような電極を形成する場合には
、フォトリソグラフィー工程を先に行って電極埋設用の
溝１５を形成し、その後にＭｏ、Ｍｏ合金薄膜をイオン
ブレーティングあるいはスパッタリングによって基板２
の全面に形成し、不要な部分を感光剤ともども取り去っ
てストライプ状の電極を形成するりフトオフ法を用いて
も可能である。この工法によると、渭１５の深さと、導
電性金属１７の膜厚が等しくないと、基板２の表面が平
坦にならない、したがって、このような時は、ラップ加
工等によって基板表面を平坦化すると良い。Note that the production of individual electrodes is not particularly limited to the above-mentioned method; when forming electrodes as shown in FIG. 3, a photolithography process is performed first to form grooves 15 for embedding the electrodes. After that, a Mo or Mo alloy thin film is applied to the substrate 2 by ion blasting or sputtering.
It is also possible to use a lift-off method in which a striped electrode is formed by forming the electrode on the entire surface of the electrode and removing unnecessary portions along with the photosensitive material. According to this method, if the depth of the edge 15 and the thickness of the conductive metal 17 are not equal, the surface of the substrate 2 will not be flat. good.
また、基板２の光透過方向と平行な他方の面２Ｂ（裏面
）にもＭＯまたはＭｏ合金の電極材をイオンブレーティ
ングあるいはスパッタリングによって固着し、共通電極
４を全面に形成する［第２図（Ｃ）］、この場合、個別
電極３．・・・、３と同様の方法により、個別電極に対
応する部分のみ共通電極４を形成しても良い、共通電極
４を個別電４１ｉ３．・・・、３と対向する位置に個別
に設ければ、絶縁層８，８同士を接着した時の熱による
膨張の違いによって共通電極や５ｉ０２の薄膜が剥離す
るという危険を減少させることができるし、また、電気
光学効果が共通電極部分で横に広がることもないから、
タロストークも防止できる効果がある。Further, an electrode material of MO or Mo alloy is fixed to the other surface 2B (back surface) parallel to the light transmission direction of the substrate 2 by ion blasting or sputtering, and a common electrode 4 is formed on the entire surface [Fig. C)], in this case the individual electrodes 3. . . , 3, the common electrode 4 may be formed only in the portions corresponding to the individual electrodes. . . . If provided separately at a position facing 3, it is possible to reduce the risk that the common electrode or the thin film of 5i02 will peel off due to the difference in expansion due to heat when the insulating layers 8 and 8 are bonded together. Also, since the electro-optic effect does not spread laterally at the common electrode,
It also has the effect of preventing Talostalk.
そして、基板２の両面に電極３．・・・、３及び４を被
うように、スパッタリング等によって絶縁材としての５
ｉ０２の薄膜８．９を形成しブロック１１とする［第２
図（Ｄ）コ。Then, electrodes 3 are placed on both sides of the substrate 2. ..., 5 as an insulating material by sputtering etc. so as to cover 3 and 4.
A thin film 8.9 of i02 is formed to form a block 11 [Second
Figure (D).
次いで、２組の上述のブロック１１を共通な極４．４同
士が向い合うように背中合せに突合せ、かつ一方の支持
部材５上の個別電極３．・・・、３が他方の支持部材５
上の個別電極３．・・・、３の間に位置するように千鳥
状に配列して、それらの共通＠極４，４の間にスペーサ
（図示省略）を挟み込んで重ねる。更に、各個別電極３
．・・・、３側にスペーサ（図示省略）を介して支持部
材５としてのセラミックス等のブロックを夫々重ねる。Next, the two sets of blocks 11 described above are butted back to back so that the common poles 4.4 face each other, and the individual electrodes 3.4 on one support member 5 are connected. ..., 3 is the other supporting member 5
Upper individual electrode 3. . Furthermore, each individual electrode 3
．． . . . A block made of ceramic or the like as a support member 5 is stacked on the 3 side with a spacer (not shown) interposed therebetween.
その後、支持部材５と個別電極側絶縁層９との間及び共
通電極側絶縁層８との間に加熱状態下で低融点ガラス１
２を侵入させて全体を１つのブロック状に固める［第２
図（Ｅ）］、このとき、電極材料としてＭｏあるいはＭ
ｏ合金を採用しているなめ、接合時の作業温度によって
酸化することがない、また、この電極部材とＰＬＺＴ基
板２の線膨張係数とは近似しているためクラックやひび
割れの虞がない。Thereafter, the low melting point glass 1 is heated between the support member 5 and the insulating layer 9 on the individual electrode side and the insulating layer 8 on the common electrode side.
2 and solidify the whole into one block [Second
Figure (E)], at this time, Mo or M is used as the electrode material.
Since the electrode member and the PLZT substrate 2 have similar linear expansion coefficients, there is no risk of cracking or crazing.
このブロック１３を積層方向即ちＰＬＺＴ基板２の光透
過方向と直角な方向１８にスライスして所望の厚さにす
る［第２図（Ｆ＞１．スライスされたブロックチップ１
４は研磨される。そして、ブロックチップ１４の光透過
方向と直交する面の片面に電極材例えばＡＩ、Ａ１合金
を真空蒸着等によって薄膜状に被膜し、フォトリングラ
フィによって所望の端子電極６．・・・１６を支持部材
５上に、また共通電極４，４上に端子電極７を形成する
し第２図（Ｇ）］、端子電極６．・・・、６は対応する
個別電極３．・・・、３と夫々接続され、端子電極７は
双方の共通電極４，４と同時に接続されている。This block 13 is sliced in a direction 18 perpendicular to the stacking direction, that is, the direction of light transmission of the PLZT substrate 2 to a desired thickness [Fig. 2 (F>1. Sliced block chip 1
4 is polished. Then, one side of the block chip 14 perpendicular to the light transmission direction is coated with an electrode material such as AI or A1 alloy in a thin film form by vacuum deposition or the like, and a desired terminal electrode 6. is formed by photolithography. . . 16 on the support member 5, and the terminal electrode 7 on the common electrodes 4, 4 (FIG. 2(G))], the terminal electrode 6. ..., 6 are corresponding individual electrodes 3. ..., 3, respectively, and the terminal electrode 7 is connected to both common electrodes 4, 4 at the same time.
尚、上述の実施例は本発明の好適な実施の一例ではある
がこれに限定されるものではなく本発明の要旨を逸脱し
ない範囲において種々変形実施可能である１例えば、端
子電極６もＭｏ、Ｍｏ合金Ｗ、Ｃｒ、Ｔａのいずれかで
形成しても良い。Although the above-mentioned embodiment is an example of a preferred implementation of the present invention, the present invention is not limited thereto, and various modifications can be made without departing from the gist of the present invention.1 For example, the terminal electrode 6 may also be made of Mo, It may be formed of any one of Mo alloys W, Cr, and Ta.
（発明の効果）
以上の説明より明らかなように、本発明の光シャッタア
レイ及びその製造方法は、電極材料としてＭｏ、Ｍｏ合
金、Ｗ、Ｃｒ、Ｔａのいずれかを用いるようにしている
ので、ＰＬＺＴを溶融ガラス等を用いて接合する時の熱
およびスライス・ラップ後の熱処理によって、電極が導
電不良を惹き起こすまで酸化されることがなくなった。(Effects of the Invention) As is clear from the above description, the optical shutter array of the present invention and its manufacturing method use any one of Mo, Mo alloy, W, Cr, and Ta as the electrode material. The electrodes are no longer oxidized to the extent that they cause poor conductivity due to the heat when bonding PLZT with molten glass or the like and the heat treatment after slicing and lapping.
また、本発明の光シャッタアレイは、電極材料としてＭ
Ｏ２Ｍｏ合金、Ｗ、Ｃｒ、Ｔａのいずれかを用いるので
、電気光学効果を有する基板例えばＰＬＺＴの線膨張係
数に近くかつ高融点であるため、ガラスボンディングや
加熱処理時にクラックが発生するのを抑えることができ
る。Further, the optical shutter array of the present invention uses M as the electrode material.
Since O2Mo alloy, W, Cr, or Ta is used, it has a linear expansion coefficient close to that of a substrate with an electro-optic effect, such as PLZT, and has a high melting point, so it is possible to suppress the occurrence of cracks during glass bonding or heat treatment. I can do it.
第１図（Ａ）は本発明の光シャッタアレイの一実施例を
示す平面図、第１図（Ｂ）は第１図（Ａ）のｌ−１１１
に沿う拡大断面図である。
第２図（Ａ）−第２図（Ｇ）は本発明に係る光シャッタ
アレイの製造プロセスの一例を示す工程図である。
第３図は本発明の他の実施例を示すもので、光シャッタ
アレイの構成を部分的に示す平面図である。
第４図は光シャッタの原理図である。
第５図（Ａ）−第５図（Ｃ）は従来の光シャッタアレイ
の電極の配置を説明する断面正面図である。
２・・・ＰＬＺＴ基板（電気光学効果を有する基板）、
３・・・個別電極、４・・・共通電極、５・・・支持部
材、６・・・端子電極。FIG. 1(A) is a plan view showing one embodiment of the optical shutter array of the present invention, and FIG. 1(B) is the l-111 of FIG. 1(A).
FIG. FIG. 2(A) to FIG. 2(G) are process diagrams showing an example of the manufacturing process of the optical shutter array according to the present invention. FIG. 3 shows another embodiment of the present invention, and is a plan view partially showing the configuration of an optical shutter array. FIG. 4 is a diagram showing the principle of the optical shutter. FIGS. 5(A) to 5(C) are cross-sectional front views illustrating the arrangement of electrodes of a conventional optical shutter array. 2... PLZT substrate (substrate with electro-optic effect),
3... Individual electrode, 4... Common electrode, 5... Support member, 6... Terminal electrode.
Claims (7)
のいずれかを使用することを特徴とする光シャッタアレ
イ。(1) Mo, Mo alloy, W, Cr, Ta as electrode materials
An optical shutter array characterized by using one of the following.
方向と平行な一方の面に設けられた複数の個別電極と、
前記一方の面と平行な前記基板の他方の面に設けられた
共通電極と、前記個別電極を前記基板との間で挾む支持
部材と、前記支持部材上に設けられて前記各個別電極に
個々に接続されている端子電極とから成り、更に前記個
別電極と前記共通電極はＭｏ、Ｍｏ合金、Ｗ、Ｃｒ、Ｔ
ａのいずれかによつて入射光に対しほぼ平行となるよう
設けられ、かつ端子電極が上記入射光に対しほぼ直交す
るように設けられたことを特徴とする光シャッタアレイ
。(2) a substrate having an electro-optic effect; a plurality of individual electrodes provided on one surface of the substrate parallel to the light transmission direction;
a common electrode provided on the other surface of the substrate parallel to the one surface; a support member sandwiching the individual electrodes between the substrate; and a support member provided on the support member for each of the individual electrodes. It consists of terminal electrodes that are individually connected, and the individual electrodes and the common electrode are made of Mo, Mo alloy, W, Cr, T.
1. An optical shutter array characterized in that the terminal electrode is provided to be substantially parallel to the incident light by any one of (a), and the terminal electrode is provided to be substantially perpendicular to the incident light.
は１０〜９０重量％であることを特徴とする請求項１又
は２記載の光シャッタアレイ。(3) The optical shutter array according to claim 1 or 2, wherein the additive material of the Mo alloy is Ta, and the content thereof is 10 to 90% by weight.
に形成された溝部に導電性金属を埋め込んで形成した埋
込電極からなることを特徴とする請求項１ないし３のい
ずれかに記載の光シャッタアレイ。(4) According to any one of claims 1 to 3, wherein the individual electrode is a buried electrode formed by burying a conductive metal in a groove formed in a surface parallel to the light transmission direction of the substrate. The optical shutter array described.
り、支持部材の材料がセラミックスであることを特徴と
する請求項２ないし４のいずれかに記載の光シャッタア
レイ。(5) The optical shutter array according to any one of claims 2 to 4, wherein the material of the substrate having an electro-optic effect is PLZT, and the material of the supporting member is ceramics.
アレイの製造において、Ｍｏ、Ｍｏ合金、Ｗ、Ｃｒ、Ｔ
ａのいずれかの電極材料をイオンプレーティングによっ
て電気光学効果を有する基板上に薄膜として形成するこ
とを特徴とする光シャッタアレイの製造方法。(6) In the production of the optical shutter array according to any one of claims 1 to 5, Mo, Mo alloy, W, Cr, T
A method for manufacturing an optical shutter array, comprising forming any of the electrode materials in (a) as a thin film on a substrate having an electro-optic effect by ion plating.
アレイの製造において、Ｍｏ、Ｍｏ合金、Ｗ、Ｃｒ、Ｔ
ａのいずれかの電極材料をスパッタリングによって電気
光学効果を有する基板の上に薄膜として形成することを
特徴とする光シャッタアレイの製造方法。(7) In the production of the optical shutter array according to any one of claims 1 to 5, Mo, Mo alloy, W, Cr, T
A method for manufacturing an optical shutter array, comprising forming any one of the electrode materials of (a) as a thin film on a substrate having an electro-optic effect by sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12125190A JPH0436718A (en) | 1990-05-14 | 1990-05-14 | Optical shutter array and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12125190A JPH0436718A (en) | 1990-05-14 | 1990-05-14 | Optical shutter array and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0436718A true JPH0436718A (en) | 1992-02-06 |
Family
ID=14806639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12125190A Pending JPH0436718A (en) | 1990-05-14 | 1990-05-14 | Optical shutter array and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436718A (en) |
-
1990
- 1990-05-14 JP JP12125190A patent/JPH0436718A/en active Pending
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