JPH0436450B2 - - Google Patents

Info

Publication number
JPH0436450B2
JPH0436450B2 JP57167280A JP16728082A JPH0436450B2 JP H0436450 B2 JPH0436450 B2 JP H0436450B2 JP 57167280 A JP57167280 A JP 57167280A JP 16728082 A JP16728082 A JP 16728082A JP H0436450 B2 JPH0436450 B2 JP H0436450B2
Authority
JP
Japan
Prior art keywords
reactive gas
plasma
pair
reaction vessel
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57167280A
Other languages
Japanese (ja)
Other versions
JPS5956725A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57167280A priority Critical patent/JPS5956725A/en
Priority to US06/533,941 priority patent/US4582720A/en
Publication of JPS5956725A publication Critical patent/JPS5956725A/en
Priority to US06/828,790 priority patent/US4640845A/en
Priority to US06/828,908 priority patent/US4642243A/en
Priority to US07/127,602 priority patent/US4832981A/en
Publication of JPH0436450B2 publication Critical patent/JPH0436450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185Means for transferring objects between different enclosures of different pressure or atmosphere

Description

【発明の詳細な説明】 本発明はプラズマCVD装置に関する。[Detailed description of the invention] The present invention relates to a plasma CVD apparatus.

本発明は反応容器内に筒状空間を選択的に設
け、この空間に配設された被形成面を有する基板
にこの空間に選択的に反応性気体を供給するとと
もに、この空間の反応性気体を選択的にプラズマ
放電せしめることにより、反応容器の内壁に反応
生成物をフレーク(雪片)状に付着せしめないよ
うにするに加えて、被形成面上に形成される反応
生成物の生成収率(被膜になつた反応生成物/供
給された反応性気体)を向上させ、さらに被膜成
長速度を著しく向上させるプラズマGVD装置に
関する。
The present invention selectively provides a cylindrical space in a reaction container, selectively supplies a reactive gas to a substrate having a surface to be formed disposed in this space, and at the same time, the reactive gas in this space is By selectively generating plasma discharge, in addition to preventing reaction products from adhering to the inner wall of the reaction vessel in the form of flakes (snowflakes), the production yield of reaction products formed on the surface to be formed is increased. This invention relates to a plasma GVD device that improves (reaction product formed into a film/supplied reactive gas) and significantly improves the film growth rate.

本発明は反応容器内に設けられた供給手段と排
気手段とを相対し、その間に基板ホルダを用いて
筒状空間を作り、この空間の内壁を実質的に被形
成面とすることにより、プラズマ反応による反応
生成物をこの空間より反応容器内の外空間に放散
し、結果として形成された被膜にピンホールの原
因となる反応生成物のフレークの発生の防止、さ
らには装置のメンテナンスを容易にすることを目
的としている。
In the present invention, a supply means and an exhaust means provided in a reaction vessel are opposed to each other, a cylindrical space is created between them using a substrate holder, and the inner wall of this space is substantially used as a surface on which plasma is formed. The reaction products from the reaction are diffused from this space to the outside space inside the reaction vessel, preventing the formation of reaction product flakes that cause pinholes in the resulting film, and further facilitating equipment maintenance. It is intended to.

従来プラズマCVD装置としては、第1図に示
された構造がその代表的なものであるが、以下に
その概要を述べる。
The structure shown in FIG. 1 is a typical conventional plasma CVD apparatus, and its outline will be described below.

反応容器2に対し、抵抗加熱ヒータ18をその
上面に負電極25を有し、この負電極上面に被形
成面を有する基板5を配設している。さらにこの
負電極に相対した平行平板型の正電極23を多孔
状に設けている。反応性気体33,34,35よ
り流量計52、バルブ51を経由して27の供給
側に至り、正電極23の穴より下方向に噴出し、
13.56MHz等の高周波電源21により、電極23,
25間に電気エネルギが供給され、空間97にプ
ラズマが発生し、反応生成物が基板5上に形成さ
れる。反応性気体は主として86の如くに流れる
が、同時に多くの反応生成物が87方向に乱れ拡
散し、反応容器2の内壁に付着してしまう。
The reaction vessel 2 is provided with a resistance heater 18 having a negative electrode 25 on its upper surface, and a substrate 5 having a formation surface on the upper surface of the negative electrode. Further, a parallel plate type positive electrode 23 facing this negative electrode is provided in a porous manner. The reactive gases 33, 34, and 35 reach the supply side of 27 via the flowmeter 52 and valve 51, and are ejected downward from the hole in the positive electrode 23.
Electrodes 23,
Electrical energy is supplied between 25 and 25, plasma is generated in space 97, and reaction products are formed on substrate 5. The reactive gas mainly flows in the direction 86, but at the same time many reaction products are turbulently diffused in the direction 87 and adhere to the inner wall of the reaction vessel 2.

さらに基板5に供給する熱は抵抗加熱ヒータ1
8で行なうため、高周波電源の一方の49は負電
極即ち接地側としなければならない。このため反
応性気体は反応が強くおきる陽極即ち正電極の穴
の噴出しをつららのようにでき、それがフレーク
となつて基板表面に落下してしまい、ピンホール
を誘発してしまうという欠点を有する。さらにこ
のプラズマCVD装置は電極に平行に1まいの基
板5をおくのみであるため、多量生産性に乏し
く、さらに不要の反応生成物の排気を基板の外側
に設け(基板の下側にはヒータが入つている)て
いるため、基板上で中央部と周辺部とで被膜の膜
厚にバラツキが生じやすくまた被膜成長速度も十
分でなく、0.5〜1Å/秒程度であつた。
Furthermore, the heat supplied to the substrate 5 is supplied to the resistance heater 1.
8, one side 49 of the high frequency power source must be the negative electrode, that is, the ground side. For this reason, the reactive gas can cause a strong reaction to erupt from the hole in the anode (positive electrode), forming an icicle-like eruption, which becomes flakes and falls onto the substrate surface, causing pinholes. have Furthermore, since this plasma CVD apparatus only places one length of substrate 5 parallel to the electrode, it is poor in mass productivity.In addition, the exhaust of unnecessary reaction products is provided outside the substrate (there is a heater on the bottom of the substrate). Because of this, the thickness of the coating tends to vary between the central and peripheral areas on the substrate, and the coating growth rate is not sufficient, being about 0.5 to 1 Å/sec.

本発明はこれらの多くの欠点のすべてを解決し
てしまうもので、プラズマCVD装置としては全
く画期的な発明といえる。
The present invention solves all of these many drawbacks, and can be said to be a completely revolutionary invention as a plasma CVD apparatus.

さらに本発明は、かかる多数の反応容器を連結
したマルチチアンバー方式のプラズマ反応装置に
おいても第2図に示す1つのチアンバー方式に対
しても適用できるもので、一度に多数の基板を同
時にしかもその成長速度を大きくしたいわゆる多
量生産方式に関する。
Furthermore, the present invention can be applied to a multi-chamber type plasma reactor in which a large number of reaction vessels are connected, as well as to a single chamber type plasma reactor as shown in FIG. This relates to a so-called mass production method that increases the growth rate.

このため、反応性気体が反応容器内のすべてに
分散してしまうことを防ぎ、基板の被形成面を利
用して、筒状空間を設け、この筒状空間に被形成
面を1つの側に有する基板を裏面を互いに密接し
て、一定の距離例えば2〜6cm代表的には3〜4
cm離して平行に配列し、この基板が林立した筒状
空間においてのみプラズマ放電を行なわしめ、加
えて反応性気体を選択的に導びき、結果として反
応性気体の収集効率を従来の1〜3%よりその20
〜60倍の40〜70%にまで高めたことを特徴として
いる。
Therefore, to prevent the reactive gas from dispersing throughout the reaction vessel, a cylindrical space is provided using the surface of the substrate to be formed, and the surface to be formed is placed on one side of this cylindrical space. Place the substrates with their back sides close together at a certain distance, e.g. 2-6 cm, typically 3-4 cm.
Plasma discharge is performed only in the cylindrical space where these substrates are arranged in parallel with a distance of cm, and the reactive gas is selectively guided, resulting in a collection efficiency of 1 to 3 times higher than that of the conventional % more than 20
It is characterized by being increased by 40 to 70%, which is ~60 times.

本発明はかくの如くに反応性気体を基板が配置
されている筒状空間に林立した筒状空間に選択的
に導入せしめ、その領域を主に選択的にプラズマ
放電させるとともに、反応性気体をその空間を主
として選択的に流入せしめるべきガイドを供給口
および排気口に設けたことを特徴としている。さ
らに本発明においては、かかる条件を満しながら
も互いに横方向に連結したマルチチアンバー間を
基板が移動するに際し何らの支障にならないよう
に、電極、反応性ガスの導入口および排気口を設
け、さらに加熱赤外線を設けたことを特徴として
いる。
In this way, the present invention selectively introduces a reactive gas into the cylindrical space where the substrate is arranged, selectively causing a plasma discharge mainly in that area, and It is characterized in that guides are provided at the supply port and the exhaust port to allow the flow to flow mainly selectively into the space. Furthermore, in the present invention, electrodes, reactive gas inlets, and exhaust ports are provided so as to satisfy these conditions and not cause any hindrance when the substrate moves between the multi-chambers that are laterally connected to each other. It is also characterized by the provision of heating infrared rays.

かくの如くに連続製造方式を基本条件としてい
るため、それぞれの反応容器内での被膜の特性の
向上に加えて、チアンバー内壁に不要の反応生成
物が付着することを防ぎ、逆にみかけ上の反応容
器の内壁を筒状空間の側面とすることにより、被
膜作製の度に、即ち新たにホルダを反応容器内に
挿着する度に、あたかも新しい内壁が作られるた
め、くりかえしの被膜形成によつても被膜が従来
のプラズマCVD装置の内壁のように何度も層状
に積層されるのを防ぐことができる。即ちフレー
クの発生を防止できるという大きな特徴を有す
る。
Since the continuous production method is the basic condition, in addition to improving the properties of the coating within each reaction vessel, it also prevents unnecessary reaction products from adhering to the inner wall of the chamber, and conversely reduces the apparent appearance. By making the inner wall of the reaction container the side surface of the cylindrical space, it is as if a new inner wall is created each time a film is formed, that is, each time a new holder is inserted into the reaction container. However, it is possible to prevent the coating from being stacked in layers many times like the inner wall of conventional plasma CVD equipment. That is, it has the great feature of being able to prevent the generation of flakes.

以下図面に従つて本発明を説明する。 The present invention will be explained below with reference to the drawings.

実施例 1 第2図に従つて本発明のプラズマCVD装置を
示す。
Example 1 A plasma CVD apparatus of the present invention is shown according to FIG.

第2図において反応容器ではその一方の側に基
板を装填するための第1の予備室1を有し、さら
に他方に基板、ホルダをとり出すための第2の予
備室3を有する。第1の予備室1、反応容器2、
第2の予備室3の連設部はゲート弁43,44を
有し、基板、ホルダの反応室中の移動に関しては
開となり、プラズマ反応中第1の予備室1での基
板4ホルダ6のとびら11からの装填また第2の
予備室3での基板、ホルダのとびら12よりのと
り出しにおいては閉となる。装填、とり出しはと
もに予備室1,3内で大気圧となり、20,32
より真空中より大気圧にするための窒素が供給さ
れる。
In FIG. 2, the reaction vessel has a first preliminary chamber 1 for loading substrates on one side thereof, and a second preliminary chamber 3 for taking out substrates and holders on the other side. first preliminary chamber 1, reaction vessel 2,
The connected part of the second preliminary chamber 3 has gate valves 43 and 44, which are opened for movement of substrates and holders in the reaction chamber, and are open for movement of substrates and holders in the first preliminary chamber 1 during plasma reaction. It is closed when loading from the door 11 or when removing substrates and holders from the second preliminary chamber 3 from the door 12. Both loading and unloading are at atmospheric pressure in the preliminary chambers 1 and 3, and the pressure is 20,32
Nitrogen is supplied to bring the pressure from vacuum to atmospheric pressure.

第1の予備室1において、大気圧にて外部より
基板、ホルダをガイド9に挿着し、とびらを閉め
て、基板上の吸着物を加熱真空脱気させるため、
赤外線ランプ15,15′、真空排気手段29を
有している。この予備室を真空引をし、さらにバ
ルプ16を開いて赤外線ランプ15,15をも真
空引をした。この後ゲート弁43を開け、予め真
空引がされている反応容器2内に基板、ホルダを
移動させる。この移動は第1の予備室にあるステ
ツプモータ8で行なう。まずガイド9を含むホル
ダを約〜1.5cm上方にもち上げ、この後容器2内
にホルダをガイドをのばして移動させた。さらに
中央部に至つた後、ガイドを止め、約1.5cm下方
向にホルダをガイドを下げることによりおろす。
するとその中間の高さの位置にホルダ7の上部の
円板状デイスクをうけるフインシヤフト39が設
けられており、ここにホルダが保持される。この
後ガイドはこのデイスクの下側を通り、もとの第
1の予備室1に縮んで収納される。さらにゲート
弁43を閉じる。
In the first preliminary chamber 1, the substrate and holder are inserted into the guide 9 from the outside at atmospheric pressure, the door is closed, and the adsorbed material on the substrate is heated and vacuum degassed.
It has infrared lamps 15, 15' and evacuation means 29. This preliminary chamber was evacuated, and furthermore, the valve 16 was opened to evacuate the infrared lamps 15, 15 as well. Thereafter, the gate valve 43 is opened and the substrate and holder are moved into the reaction vessel 2 which has been evacuated in advance. This movement is performed by a step motor 8 located in the first preliminary chamber. First, the holder including the guide 9 was lifted upward by about 1.5 cm, and then the holder was moved into the container 2 by extending the guide. After reaching the center, stop the guide and lower the holder approximately 1.5 cm downward by lowering the guide.
Then, a fin shaft 39 is provided at an intermediate height position to receive the disc-shaped disk at the upper part of the holder 7, and the holder is held here. Thereafter, the guide passes under this disk and is shrunk and stored in the original first reserve chamber 1. Furthermore, the gate valve 43 is closed.

この後第1の予備室を窒素20により大気圧と
し、次の基板、ホルダをガイド9に挿着させこれ
がくりかえされる。
Thereafter, the first preliminary chamber is brought to atmospheric pressure with nitrogen 20, the next substrate and holder are inserted into the guide 9, and this process is repeated.

反応容器内での機構を記す。 The mechanism inside the reaction vessel is described.

反応容器2は反応性気体を供給する系97と真
空排気する系98を具備する。
The reaction vessel 2 is equipped with a system 97 for supplying a reactive gas and a system 98 for evacuation.

反応性気体を供給する系97はドーピング系と
してバルブ51、流量計52とキヤリアガス3
3、反応性気体34,35,36,37よりなつ
ている。反応性気体として珪化物気体、ゲルマニ
ユーム化物気体の如く室温で気体のものは34よ
り、またこれにPまたはN型用のドーピング用気
体(例えばジボラン、フオスヒン)は35より供
給することが可能である。
A reactive gas supply system 97 includes a valve 51, a flow meter 52, and a carrier gas 3 as a doping system.
3. Consists of reactive gases 34, 35, 36, and 37. As a reactive gas, a gas such as a silicide gas or a germanium compound gas at room temperature can be supplied from 34, and a doping gas for P or N type (for example, diborane, phosphine) can be supplied from 35. .

また塩化スズ、塩化アルミニユーム、塩化アン
チモン等の室温において液体のものは、バブラー
36により供給される。これらの気体は減圧下に
て気体となるため、流量計により十分制御が可能
である。また蒸着にはこのバブラー36の電子恒
温そうによる温度制御をおこなつた。
Further, substances that are liquid at room temperature, such as tin chloride, aluminum chloride, and antimony chloride, are supplied by a bubbler 36. Since these gases become gases under reduced pressure, they can be sufficiently controlled using a flow meter. Further, the temperature of the bubbler 36 was controlled by electronic constant temperature control during vapor deposition.

これらの反応性気体は供給口27より供給ノズ
ル(フードともいう)により下方向に噴射され
る。このフードのふき出し口は1〜2mmの穴が多
数あけられ、全体に均質にふき出すようにしてあ
る。さらにこの穴の間にはプラズマ放電用の負の
電極23を有し、これはリード49をへて電気エ
ネルギ供給用の発振器21に至つている。他方の
正の端子22は排気手段47のフード上に設けら
れて網目状または多孔状の正電極25に接続され
ている。
These reactive gases are injected downward from the supply port 27 by a supply nozzle (also referred to as a hood). The air outlet of this hood has many holes of 1 to 2 mm in size, so that the air blows out evenly over the whole area. Furthermore, between the holes there is a negative electrode 23 for plasma discharge, which leads via a lead 49 to an oscillator 21 for supplying electrical energy. The other positive terminal 22 is provided on the hood of the exhaust means 47 and connected to a mesh-like or porous positive electrode 25 .

排気手段47は供給手段24と概略同一形状を
有し、ともに透明石英により作られており、全体
の穴より均一に筒状空間に気体を層流にして排気
口28より真空ポンプ30に至る。
The exhaust means 47 has approximately the same shape as the supply means 24 and is made of transparent quartz, and creates a laminar flow of gas uniformly in the cylindrical space through the entire hole, leading to the vacuum pump 30 from the exhaust port 28.

反応性気体は供給口46より下方向に筒状空間
100をへて排気口47に至る。筒状空間は外周
を石英で作り、その内壁に被形成面を有する基板
5が一定の間隙例えば3cmをとつて互いに裏面を
接して配設されている。
The reactive gas flows downward from the supply port 46 through the cylindrical space 100 and reaches the exhaust port 47 . The outer periphery of the cylindrical space is made of quartz, and the substrates 5 each having a surface to be formed on its inner wall are arranged with their back surfaces in contact with each other with a certain gap, for example, 3 cm.

この基板の加熱は上側の赤外線ランプ18と下
側の赤外線ランプ18′とが互いに直交して金メ
ツキされた放物面の反射鏡を有して設けられ、筒
状空間の均熱化を計つている。
To heat the substrate, an upper infrared lamp 18 and a lower infrared lamp 18' are arranged orthogonally to each other and have gold-plated paraboloid reflectors, which are designed to equalize the temperature of the cylindrical space. It's on.

この加熱用のランプ18,18′が設けられて
いる空間と、反応容器内の反応室をは透明石英板
95,95′によつてしきられ、反応生成物が赤
外線ランプに至り、ランプの表面に付着すること
を防いでいる。この反応容器の2つの室の圧力調
整は、反応性気体を流していない時、例えばオー
バーホール用の大気圧にする時、また真空引をす
る時、バルブ17を閉して等圧とし、また反応性
気体が供給される時は閉として赤外線ランプ内に
反応性気体が流入することを防いでいる。
The space in which the heating lamps 18, 18' are provided and the reaction chamber inside the reaction vessel are separated by transparent quartz plates 95, 95', and the reaction products reach the infrared lamp, and the surface of the lamp Prevents it from adhering to. The pressure in the two chambers of this reaction vessel is adjusted by closing the valve 17 to equalize the pressure when the reactive gas is not flowing, for example, when bringing the pressure to atmospheric pressure for overhaul, or when vacuuming. When reactive gas is supplied, it is closed to prevent reactive gas from flowing into the infrared lamp.

フインシヤフト39は外部のステツプモータ1
9と真空を遮断され回転している。そのためこの
フインシヤフトによつてつるされている基板5ホ
ルダ7は3〜10回転/分で回転し、基板上での被
膜形成を均一にさせている。
The fin shaft 39 is connected to the external step motor 1.
9 and is rotating with the vacuum cut off. Therefore, the substrate 5 holder 7 suspended by this fin shaft rotates at 3 to 10 revolutions/minute to uniformly form a film on the substrate.

この反応容器を上方よりみたホルダ7筒状空
間、反応性気体の供給口46排気口47さらにホ
ルダの移動用のガイドの位置関係を第3図に示
す。第3図の番号は第2図に対応している。
FIG. 3 shows the positional relationship of the cylindrical space of the holder 7, the reactive gas supply port 46, the exhaust port 47, and the guide for moving the holder when this reaction vessel is viewed from above. The numbers in FIG. 3 correspond to those in FIG.

図においてフインシヤフト39はつば80と軸
79よりなり、このつばの部分にホルダ7の円板
状デイスク41が保持されている。
In the figure, the fin shaft 39 consists of a collar 80 and a shaft 79, and the disc-shaped disc 41 of the holder 7 is held in the collar.

さらに筒状空間100を作るための壁40が下
方向にのみであり、一対の電極23,25が反応
性気体のふき出し口42、排気口の間に網状に設
けられている。また空間100を均一に加熱でき
るように、ヒータ用の窓95,95が設けられて
いる。
Further, the wall 40 for creating the cylindrical space 100 is provided only in the downward direction, and a pair of electrodes 23 and 25 are provided in a net shape between the reactive gas outlet 42 and the exhaust port. Further, heater windows 95, 95 are provided so that the space 100 can be heated uniformly.

ホルダの移動用のガイドは第1の予備室に9と
して保持され、反応容器2内に至つた時9の位置
になる。基板、ホルダは77より78の方向に移
動する。反応性気体の供給口46基板5ホルダ
7、排気口47、一対の電極23,25の相関関
係については、第4図にさらにその斜視図(前半
分を切断してある)で示している。
A guide for moving the holder is held at 9 in the first preparatory chamber, and is at position 9 when it reaches inside the reaction vessel 2. The substrate and holder move in the direction from 77 to 78. The relationship between the reactive gas supply port 46, the substrate 5 holder 7, the exhaust port 47, and the pair of electrodes 23, 25 is further shown in a perspective view (with the front half cut away) in FIG.

即ち、第4図において基板5は裏面を互いに合
せてさしこみ式になつたホルダ7に垂直方向(鉛
直方向)に互いに一定の間隙例えば3cmにて平行
に基板を配設する手段により配置されている。ホ
ルダは石英よりなり、上側に円板状のデイスク4
1とこれに連結した基板用みぞ95を有してい
る。デイスク41は4つのフイン80,80′に
より空間に保持され、フイン80,80′は軸
(シアフト)79,79′の回転に従つて回転し、
その結果デイスクを3〜10回/分の速度で回転さ
せ、反応性気体の均質化を促進させている。
That is, in FIG. 4, the substrates 5 are placed in a holder 7 which is an insertion type with their back sides aligned with each other by means of arranging the substrates parallel to each other in the vertical direction with a constant gap of, for example, 3 cm. . The holder is made of quartz and has a disk-shaped disk 4 on the top.
1 and a substrate groove 95 connected thereto. The disk 41 is held in space by four fins 80, 80', and the fins 80, 80' rotate according to the rotation of shafts (shafts) 79, 79'.
As a result, the disk is rotated at a speed of 3 to 10 times per minute to promote homogenization of the reactive gas.

反応性気体は供給口46より1〜3mmの穴42
をへて網状電極(穴約5〜10mm)23をへて、下
方向にふき出させている。供給口46のフードに
はガイド70により反応性気体の82方向への放
出を防ぐため、間隙81は1cm以下好ましくは2
〜5mmとした。そして反応性気体は基板5′,
5″の被形成面および基板5をたてるためのみぞ
95を保持するための壁96とによつて、筒状1
00に構成した。即ち、煙突状に設けられた中空
を83,85の方向に層状に流させた。反応性気
体導入口27を有する上ブタであるフードと反応
性気体排出口28を有する下ブタであるフードと
を相対し、その相対したフードの間に基板ホルダ
である基板支持体を配して一対の電極間に生じた
プラズマを閉じ込めるための筒状空間(閉空間)
を作つた。石英の側壁96はみぞ95より外側に
10〜20mm離れて設け、反応性気体の側壁96での
みだれの発生を防ぎ、そのことにより基板5の端
部での被膜の膜厚の均一性をより促進させた。
The reactive gas is supplied through a hole 42 with a diameter of 1 to 3 mm from the supply port 46.
It passes through a mesh electrode (holes approximately 5 to 10 mm) 23 and is blown out downward. The hood of the supply port 46 has a gap 81 of 1 cm or less, preferably 2 cm, in order to prevent reactive gas from being released in 82 directions by a guide 70.
~5 mm. And the reactive gas is the substrate 5',
5" and a wall 96 for holding a groove 95 for standing up the substrate 5,
00. That is, the hollow provided in the shape of a chimney was made to flow in layers in the directions 83 and 85. A hood, which is an upper lid having a reactive gas inlet 27, and a hood, which is a lower lid, which has a reactive gas outlet 28 are faced to each other, and a substrate support, which is a substrate holder, is arranged between the facing hoods. A cylindrical space (closed space) for confining the plasma generated between a pair of electrodes
I made it. The quartz side wall 96 is located outside the groove 95.
They were placed 10 to 20 mm apart to prevent the reactive gas from sagging on the side wall 96, thereby further promoting uniformity of the film thickness at the edge of the substrate 5.

また排気系に関しても、84からの反応性気体
の流入を少なくし、85を選択的に優先させるた
め、ガイド71と基板下端との間隙を1cm以下に
合せて設けた。即ち82,84のガス流のコンダ
クタンスを83,85の約1/5以下好ましくは1/3
0〜1/100にすることにより、筒状空間は選択的に
反応性気体を導き入れた。正電極25と基板下端
との距離はガイドの高さを調節して設けた。
Regarding the exhaust system, in order to reduce the inflow of reactive gas from 84 and selectively give priority to 85, the gap between guide 71 and the bottom end of the substrate was set to 1 cm or less. In other words, the conductance of the gas flow of 82, 84 should be about 1/5 or less, preferably 1/3 of that of 83, 85.
By adjusting the ratio from 0 to 1/100, the reactive gas was selectively introduced into the cylindrical space. The distance between the positive electrode 25 and the lower end of the substrate was determined by adjusting the height of the guide.

さらに負電極23と基板上端即ちデイスク41
との距離も同様にガイド70により調節した。
Furthermore, the negative electrode 23 and the upper end of the substrate, that is, the disk 41
Similarly, the distance between the guide 70 and the guide 70 was adjusted.

第4図より明らかな如く、電極23,25はそ
の外周辺側を石英のガイド70、上ぶた93、ガ
イド71、下ぶた94によつて囲まれており、電
極と反応用器であるチアンバー(特にステンレス
チアンバー)の内壁との寄生放電の防止に努め
た。さらに反応性気体の供給口46の内径と負電
極23が概略同一の大きさを有し、また排気口4
7と正電極25とが概略同一の大きさを有するた
め、高周波放電を行なうと、この筒状空間即ち反
応性気体は被形成面にそつて流れて、空間を5〜
30cm好ましくは15〜25cm優先的に飛翔し、プラズ
マ放電させている。その結果、反応性気体のプラ
ズマ化率がきわめて大きくなり、ひいては反応容
器(チヤンバー)の内壁に過剰の反応生成物がピ
ンホール発生の原因となるフレーク状に付着して
しまうことを防ぐことができた。
As is clear from FIG. 4, the electrodes 23 and 25 are surrounded on their outer peripheral sides by a quartz guide 70, an upper lid 93, a guide 71, and a lower lid 94. In particular, efforts were made to prevent parasitic discharge with the inner wall of the stainless steel amber. Further, the inner diameter of the reactive gas supply port 46 and the negative electrode 23 have approximately the same size, and the exhaust port 4
Since 7 and the positive electrode 25 have approximately the same size, when high-frequency discharge is performed, this cylindrical space, that is, the reactive gas flows along the surface to be formed, and the space 5 to
It preferentially flies 30 cm, preferably 15 to 25 cm, and generates plasma discharge. As a result, the plasma conversion rate of the reactive gas becomes extremely high, and it is possible to prevent excessive reaction products from adhering to the inner wall of the reaction chamber in the form of flakes, which can cause pinholes. Ta.

さらにかくの如き装置において、所定のプラズ
マCVDを行なつた後、真空排気がされている第
2の予備室に基板、ホルダを移す。即ちホルダお
よび基板は反応容器内における反応性気体を真空
引きした後、ゲート弁44をあけて移した。
Further, in such an apparatus, after performing a predetermined plasma CVD, the substrate and holder are transferred to a second preliminary chamber that is evacuated. That is, after evacuating the reactive gas in the reaction vessel, the holder and substrate were transferred by opening the gate valve 44.

この移動はガイド10を下方向より第2の予備
室をへて反応容器に至り、約1cm以上にホルダを
フインよりもち上げた後、シアフトを再び縮めて
第2の予備室に移した。この後ゲート弁44を閉
じ、第2の予備室を窒素32により大気圧とし
た。
This movement led the guide 10 from below through the second preliminary chamber to the reaction vessel, and after lifting the holder above the fins by about 1 cm or more, the shaft was retracted and transferred to the second preliminary chamber. Thereafter, the gate valve 44 was closed, and the second preliminary chamber was brought to atmospheric pressure with nitrogen 32.

かくして第2図に示された如き反応容器と第
1、第2の予備室との間でのプラズマ気相反応を
連続的に操作させることができた。
In this way, the plasma gas phase reaction between the reaction vessel and the first and second preliminary chambers as shown in FIG. 2 could be operated continuously.

参考例 1 第5図は参考例を示す。Reference example 1 FIG. 5 shows a reference example.

第5図は実施例1の第4図に対応して図面の概
要を示したものである。その他は第2図および実
施例1と同様である。
FIG. 5 shows an outline of the drawing corresponding to FIG. 4 of the first embodiment. The rest is the same as FIG. 2 and Example 1.

第5図において反応性気体は27をへて供給口
24より負電極23をへて筒状空間100でプラ
ズマ反応をし、さらに不要反応生成物およびキヤ
リアガスは排気口47、正電極25、排気系28
に至る。
In FIG. 5, the reactive gas passes through 27, the supply port 24, the negative electrode 23, and undergoes a plasma reaction in the cylindrical space 100, and the unnecessary reaction products and carrier gas are removed from the exhaust port 47, the positive electrode 25, and the exhaust system. 28
leading to.

この実施例は基板5がテーパ状に配設され、基
板の導入口側より排気口側に向つてせまくなり、
その基板上に形成される膜の均一化をさらに促進
させたものである。
In this embodiment, the board 5 is arranged in a tapered shape, and becomes narrower from the inlet side of the board toward the exhaust port side.
This further promotes uniformity of the film formed on the substrate.

この構造においてはフレークが被形成面に弱干
付着しやすいという欠点があるが、被膜の均一化
という点では実施例1よりすぐれたものであつ
た。
Although this structure has the disadvantage that flakes tend to adhere to the surface on which it is formed, it was superior to Example 1 in terms of uniformity of the coating.

参考例 2 本参考例について第5図と同様に概要を第6図
に示す。
Reference Example 2 The outline of this reference example is shown in Figure 6, similar to Figure 5.

この実施例においては反応性気体の供給口を重
力に対し下方向に設け、ホルダ7により筒状空間
100を実施例2と同様に設け、さらに排気口4
7を上方向に設けることにより反応性気体を下側
より上側に逆向きに流した。さらに基板5は反応
性気体の入口側より出口側にテーパ状にせまくな
り、被膜の膜厚の均一性もさらにすぐれたものと
なつた。加えて実施例2に比べてフレークが被形
成面に落下して付着することがなく即ちピンホー
ルによる製造歩留りも向上し、最も理想的な構造
であつた。さらに第6図においては、回転用フイ
ンシフト39,39をホルダの下側にデイスク4
1を支える構造で設けて、3〜10回/分の回転し
た。このため被膜の膜質も反応性気体の流れ方向
において均質な結果を得た。しかし第2図の実施
例1の製造装置に比べてその生産性は1回に配設
できる基板の数が少なくなるため約1/2になつて
しまつた。
In this embodiment, the reactive gas supply port is provided downward with respect to gravity, a cylindrical space 100 is provided by the holder 7 as in the second embodiment, and an exhaust port 4 is provided.
7 in the upper direction, the reactive gas was allowed to flow in the opposite direction from the lower side to the upper side. Furthermore, the substrate 5 became narrower in a tapered shape from the inlet side to the outlet side of the reactive gas, and the uniformity of the film thickness was further improved. In addition, compared to Example 2, the flakes did not fall and adhere to the surface to be formed, that is, the production yield due to pinholes was improved, and the structure was the most ideal. Furthermore, in FIG.
1 and rotated 3 to 10 times/min. Therefore, the film quality of the film was also uniform in the flow direction of the reactive gas. However, compared to the manufacturing apparatus of Example 1 shown in FIG. 2, the productivity was reduced to about 1/2 because the number of substrates that could be disposed at one time was reduced.

実施例 2 この実施例は実施例1のプラズマCVD装置を
用い、反応性気体として34よりシランを供給し
て珪素半導体膜を作製したものである。
Example 2 In this example, a silicon semiconductor film was produced using the plasma CVD apparatus of Example 1 and supplying silane from 34 as a reactive gas.

基板温度は250℃とした。被膜の成長速度は3
Å/秒を高周波(13.56MHzを使用)電界を20W
とし、シランを30cc/分加え、プラズマCVD中
の圧力を0.1torrとした時得ることができた。結
果として従来の平行平板型の電極方式において
0.1〜1Å/秒に比べて、同一反応容器において
例えば前者が10cm1まいであるのに対し、本発明
のプラズマCVD装置においては、10cm8まいを
被膜の成長速度が従来の0.5Å/秒とすると6倍
になり、合計48倍の多量生産が可能になつた。
The substrate temperature was 250°C. The growth rate of the film is 3
Å/sec high frequency (use 13.56MHz) electric field 20W
This was obtained when silane was added at 30 cc/min and the pressure during plasma CVD was 0.1 torr. As a result, in the conventional parallel plate electrode system,
Compared to 0.1 to 1 Å/sec, for example, in the same reaction vessel, the former is 10 cm 1 mm, whereas in the plasma CVD apparatus of the present invention, if the conventional film growth rate is 0.5 Å/sec for 10 cm 8 mm, it is 6 This has doubled, making it possible to produce a total of 48 times more volume.

さらに重要なことは、従来は1〜2回のCVD
作業を行なうこと、チアンバーの内壁は真空で
0.3〜1μのシリコンのフレークが沈着した。しか
しこのプラズマCVD装置においては、0.5μの膜
厚の被膜生成をくりかえして行ない、その回数が
100回になつても、反応容器の内壁にはうつすら
とフレイクが観察されるのみであつた。
More importantly, conventionally one or two CVD
The inner walls of the chamber must be vacuumed during the work.
Silicon flakes of 0.3-1μ were deposited. However, in this plasma CVD equipment, a film with a thickness of 0.5μ is repeatedly generated, and the number of times is
Even after 100 cycles, only flakes were observed on the inner wall of the reaction vessel.

かくして形成された半導体層は、プラズマ状態
の距離が長いため、光伝導度も2×10-4〜7×
10-3(Ωcm)-1、暗伝導度3×10-7〜1×10-9(Ω
cm)-1を有していた。
Since the semiconductor layer thus formed has a long plasma state distance, its photoconductivity also ranges from 2×10 -4 to 7×
10 -3 (Ωcm) -1 , dark conductivity 3×10 -7 to 1×10 -9
cm) -1 .

これはプラズマの電界方向が被形成面に垂直の
従来の方法が、光伝導度として3×10-5〜3×
10-4(Ωcm)-1暗伝導度5×10-7〜1×10-9(Ωcm)
-1であることを考えると、半導体膜として16倍以
上の特性の向上がみられた。
This is because the conventional method in which the plasma electric field direction is perpendicular to the surface to be formed has a photoconductivity of 3×10 -5 to 3×
10 -4 (Ωcm) -1 Dark conductivity 5×10 -7 ~1×10 -9 (Ωcm)
-1 , the properties of the semiconductor film were improved by more than 16 times.

この実施例は不純物を積極的に添加しない場合
であるが、PまたはN型用の不純物を添加しても
同様のP型またはN型の半導体膜を作ることがで
きる。
Although this embodiment is a case in which impurities are not actively added, a similar P-type or N-type semiconductor film can be made even if P- or N-type impurities are added.

実施例 3 この実施例は実施例1のプラズマCVD装置を
用いて導電性金属を作製せんとするものでる。
Example 3 In this example, a conductive metal was produced using the plasma CVD apparatus of Example 1.

以上において金属アルミニユームをプラズマ
CVD法で形成する場合を示す。
Plasma metal aluminum
The case of forming by CVD method is shown.

第2図においてバブラー36に塩化アルミニユ
ームを充填した。塩化アルミニユームにおいて
は、電子恒温そうにて40〜60℃に加熱した。さら
に39よりキヤリアガスとして不活性気体のヘリ
ユームを100cc/Mの流量導入し、ヘリユームに
混入した塩化アルミニユームを導入した。さらに
水素を33より60〜100cc/分の流量導入した。
基板温度は200〜550℃例えば400℃に選んだ。高
周波電源は13.56MHzの周波数を10〜30W、例え
ば20Wを供給した。
In FIG. 2, a bubbler 36 was filled with aluminum chloride. For aluminum chloride, it was heated to 40 to 60°C in an electronic thermostat. Furthermore, helium, an inert gas, was introduced as a carrier gas at a flow rate of 100 cc/M from No. 39, and aluminum chloride mixed with the helium was introduced. Further, hydrogen was introduced from 33 at a flow rate of 60 to 100 cc/min.
The substrate temperature was chosen to be 200-550°C, for example 400°C. The high frequency power supply provided 10-30W, for example 20W, at a frequency of 13.56MHz.

かくして10cmを8まい挿着した基板上に0.3
Å/秒の成長速度で0.5〜1μの厚さに形成させる
ことができた。
In this way, 0.3
A thickness of 0.5 to 1 μm could be formed at a growth rate of Å/sec.

さらに出発材料としてトリエチルアルミニユー
ム(TEAL)を第2図のバブラー36に充填させ
た。さらに39にキヤリアガスを導入する必要は
なかつた。バブラーの温度を60℃とすることによ
り、流量計において60cc/分とした。さらに水素
を33より100cc/分で導入し、プラズマCVDを
行なつた。反応圧力を0.1〜0.3torrとし、高周波
を100KHz30Wとすることにより、基板を5イン
チウエハを40まい挿着させた。するとこれらの基
板上には4Å/分の成長速度にて金属アルミニユ
ームを作ることができた。
Furthermore, triethylaluminium (TEAL) as a starting material was filled into the bubbler 36 in FIG. Furthermore, there was no need to introduce carrier gas into 39. By setting the temperature of the bubbler to 60°C, the flow rate was set at 60 cc/min in the flowmeter. Furthermore, hydrogen was introduced from 33 at a rate of 100 cc/min, and plasma CVD was performed. By setting the reaction pressure to 0.1 to 0.3 torr and the high frequency to 100 KHz and 30 W, 40 5-inch wafers were inserted into the substrate. Metallic aluminum could then be formed on these substrates at a growth rate of 4 Å/min.

この時導体が筒状空間に形成されても、放電が
不安定になることもなく、厚さ1〜2μの金属ア
ルミニユームを蒸着させることができる。
At this time, even if the conductor is formed in the cylindrical space, the discharge will not become unstable, and metal aluminum having a thickness of 1 to 2 μm can be deposited.

この時反応容器2には、外部の38より水素を
700cc/分導入した。かくすることにより、反応
容器の内壁に付着する程度をさらに少なくさせる
ことができた。そのため30回1〜2μの厚さに形
成しても、容器の内壁、のぞき窓に特に大きなく
もりはみられなかつた。
At this time, hydrogen is supplied to reaction vessel 2 from outside 38.
700cc/min was introduced. By doing so, it was possible to further reduce the degree of adhesion to the inner wall of the reaction vessel. Therefore, even when the film was formed 30 times to a thickness of 1 to 2 μm, no particularly large clouding was observed on the inner wall of the container or the viewing window.

特にプラズマ放電用の2つの電極間をリーク電
流により互いに連結することが本発明のプラズマ
CVD装置においてないため、即ち上側フードと
ホルダとは離間し、さらにこのホルダと下側フー
トとは同様に離間している。さらにその周囲も反
応容器の内壁に付着が少ないため、このいずれの
電路においてもリークが発生することがなかつ
た。
In particular, it is possible to connect two electrodes for plasma discharge with each other by a leakage current.
Since this is not a CVD device, the upper hood and holder are separated, and the holder and lower foot are similarly separated. Furthermore, since there was little adhesion to the inner wall of the reaction vessel around it, no leakage occurred in any of the electrical circuits.

この実施例においてはアルミニユームであつた
が、例えばカルボニル化合物の鉄、ニツケル、コ
バルトのカルボニル化合物を用いて、金属鉄ニツ
ケルまたはコバルトを被膜状に作製することも可
能である。
In this example, aluminum was used, but it is also possible to make a film of metallic iron-nickel or cobalt using carbonyl compounds of iron, nickel, or cobalt, for example.

実施例 4 この実施例は実施例1のプラズマCVD装置を
用いて、窒化珪素被膜を作製した。
Example 4 In this example, a silicon nitride film was produced using the plasma CVD apparatus of Example 1.

即ち、第1図の場合において、シランを34よ
り5cc/分、アンモニアを35より100cc/分導入
した。基板温度は300Cとし、03torrとし10cmの基
板または5インチウエハ上に500〜1000Åの厚さ
に形成させることができた。
That is, in the case of FIG. 1, silane was introduced from No. 34 at a rate of 5 cc/min, and ammonia was introduced from No. 35 at a rate of 100 cc/min. The substrate temperature was 300C and 03 torr, and the film could be formed to a thickness of 500 to 1000 Å on a 10 cm substrate or 5 inch wafer.

被膜の均一性において、ロツト内、ロツト間に
おいて±3%以内を得ることができた。
The uniformity of the coating was within ±3% within and between lots.

実施例 5 この実施例は酸化珪素を形成させた場合であ
る。即ちシランを16cc/分として34より、また
過酸化窒素を35より100cc/分導入し、同時に
33より窒素を200cc/分導入した。
Example 5 This example is a case where silicon oxide is formed. That is, silane was introduced from 34 at 16 cc/min, nitrogen peroxide was introduced from 35 at 100 cc/min, and at the same time nitrogen was introduced from 33 at 200 cc/min.

高周波電力は5Wとした。基板温度は100〜400
℃において可能であるが、250℃で形成させたと
すると、被膜の均一性が0.5μ形成した場合±5%
以内におさめることができた。
The high frequency power was 5W. Substrate temperature is 100~400
℃, but if it is formed at 250℃, the uniformity of the film will be ±5% if 0.5μ is formed.
I was able to keep it within.

この時38より200cc/分にて窒素を導入し、
さらにチアンバー内壁へのフレークの付着を少な
くした。その結果100回の連続製造をしてもフレ
ークは全く観察することができなかつた。
At this time, nitrogen was introduced at 200cc/min from 38.
Furthermore, the adhesion of flakes to the inner wall of the chamber was reduced. As a result, no flakes could be observed even after continuous production 100 times.

実施例 6 この実施例においては化合物導体例えば珪化タ
ングステン、珪化モリブデンを作製した。即ち実
施例1においてバブラー36に塩化モリブデンま
たはフツ化タングステンを導入し、さらにシラン
を35より供給し、タングステンまたはモリブデ
ンと珪素とを所定の比、例えば1:2にしてプラ
ズマCVDを行なつた。その結果250℃20Wにおい
て0.4μの厚さに1〜2Å/秒の成長速度を得るこ
とができた。
Example 6 In this example, compound conductors such as tungsten silicide and molybdenum silicide were prepared. That is, in Example 1, molybdenum chloride or tungsten fluoride was introduced into the bubbler 36, silane was further supplied from the bubbler 35, and plasma CVD was performed with tungsten or molybdenum and silicon at a predetermined ratio, for example, 1:2. As a result, we were able to obtain a growth rate of 1-2 Å/sec for a thickness of 0.4 μ at 250° C. and 20 W.

この化合物金属と耐熱金属とを反応性気体を調
節することにより、層状に多層構造で作ることが
できる。
By adjusting the reactive gas, this compound metal and the heat-resistant metal can be formed into a layered multilayer structure.

以上の説明より明らかな如く、本発明のプラズ
マCVD装置は、半導体、導体または絶縁体のい
ずれに対しても形成させることができる。特に構
造敏感な半導体または導体中に不純物を添加し、
PまたはN型の不純物を添加した半導体層を複数
層積層させることができた。
As is clear from the above description, the plasma CVD apparatus of the present invention can be formed on any of semiconductors, conductors, and insulators. Adding impurities to particularly structurally sensitive semiconductors or conductors,
It was possible to stack a plurality of semiconductor layers doped with P- or N-type impurities.

さらに導体の形成において、耐熱金属であるモ
リブデン、タングステンを形成させることも可能
である。さらに基板上に導体−半導体−絶縁体−
導体と漸次積層して作製させることもできる。
Furthermore, in forming the conductor, it is also possible to use heat-resistant metals such as molybdenum and tungsten. Furthermore, conductors - semiconductors - insulators -
It can also be manufactured by gradually laminating conductors.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のプラズマCVD装置の概要を示
す。第2図は本発明のプラズマCVD装置の概要
を示す。第3図は第2図のプラズマCVD装置の
上方よりみた概要を示す。第4図は第2図のプラ
ズマCVD装置の筒状空間を構成する付近の斜視
図を示す。第5図および第6図は他のプラズマ
CVD装置における筒状空間および反応性気体の
供給口と排気口との関係を示す。
FIG. 1 shows an outline of a conventional plasma CVD apparatus. FIG. 2 shows an outline of the plasma CVD apparatus of the present invention. FIG. 3 shows an overview of the plasma CVD apparatus shown in FIG. 2, viewed from above. FIG. 4 shows a perspective view of the vicinity constituting the cylindrical space of the plasma CVD apparatus shown in FIG. 2. Figures 5 and 6 show other plasmas.
The relationship between the cylindrical space, the reactive gas supply port, and the exhaust port in the CVD device is shown.

Claims (1)

【特許請求の範囲】[Claims] 1 1気圧以下の減圧状態に保持された反応容器
と、該反応容器に反応性気体を供給する系と、不
要反応生成物またはキヤリアガスを真空排気する
排気系と具備したプラズマ気相反応装置におい
て、前記反応容器内に固定された一対の電極およ
びその外側にフードを対抗して設け上記一対の電
極間に対抗する被形成面間の距離を等間隔に保つ
て複数の基板を保持する手段を有し、かつ前記複
数の基板をかこむ構造の移動可能な基板支持体を
設け、前記一対のフードと上記基板支持体とによ
つてかこまれる閉空間は、該空間に導入された前
記反応性気体に対して前記一対の電極より供給さ
れる電力によつて発生させるプラズマを閉じ込め
る構成を有し、前記プラズマ化した反応性気体の
反応生成物が前記反応容器の内壁に形成されない
ように前記一対のフードと基板支持体との間隔を
調整することによつて構成されていることを特徴
とするプラズマCVD装置。
1. A plasma gas phase reactor equipped with a reaction vessel maintained at a reduced pressure of 1 atmosphere or less, a system for supplying a reactive gas to the reaction vessel, and an exhaust system for evacuating unnecessary reaction products or carrier gas, A pair of electrodes fixed in the reaction vessel and a hood are provided outside the electrodes to face each other, and a means for holding a plurality of substrates is provided while maintaining equal distances between opposing surfaces to be formed between the pair of electrodes. and a movable substrate support structured to surround the plurality of substrates, and a closed space surrounded by the pair of hoods and the substrate support is configured to absorb the reactive gas introduced into the space. The pair of hoods are configured to confine the plasma generated by the electric power supplied from the pair of electrodes, and the pair of hoods are configured to confine the plasma generated by the electric power supplied from the pair of electrodes, and to prevent reaction products of the plasma-formed reactive gas from being formed on the inner wall of the reaction vessel. 1. A plasma CVD apparatus characterized in that the plasma CVD apparatus is configured by adjusting the distance between the substrate support and the substrate support.
JP57167280A 1982-09-20 1982-09-25 Plasma cvd apparatus Granted JPS5956725A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57167280A JPS5956725A (en) 1982-09-25 1982-09-25 Plasma cvd apparatus
US06/533,941 US4582720A (en) 1982-09-20 1983-09-20 Method and apparatus for forming non-single-crystal layer
US06/828,790 US4640845A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US06/828,908 US4642243A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US07/127,602 US4832981A (en) 1982-09-20 1987-11-30 Method and apparatus for forming non-single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167280A JPS5956725A (en) 1982-09-25 1982-09-25 Plasma cvd apparatus

Publications (2)

Publication Number Publication Date
JPS5956725A JPS5956725A (en) 1984-04-02
JPH0436450B2 true JPH0436450B2 (en) 1992-06-16

Family

ID=15846814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57167280A Granted JPS5956725A (en) 1982-09-20 1982-09-25 Plasma cvd apparatus

Country Status (1)

Country Link
JP (1) JPS5956725A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field

Also Published As

Publication number Publication date
JPS5956725A (en) 1984-04-02

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