JPH04340225A - Method and device for removing thin film from semiconductor substrate - Google Patents
Method and device for removing thin film from semiconductor substrateInfo
- Publication number
- JPH04340225A JPH04340225A JP14135491A JP14135491A JPH04340225A JP H04340225 A JPH04340225 A JP H04340225A JP 14135491 A JP14135491 A JP 14135491A JP 14135491 A JP14135491 A JP 14135491A JP H04340225 A JPH04340225 A JP H04340225A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor substrate
- solution
- suction
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 abstract description 18
- 230000001681 protective effect Effects 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229920000742 Cotton Polymers 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、各種半導体装置の基
板等として用いられる半導体基板のオートドーピングを
防止するために設けた酸化保護膜等の薄膜を所要部分だ
け除去むらなく除去できる半導体基板の酸化膜除去方法
とその装置に関する。[Industrial Application Field] The present invention is a semiconductor substrate that can uniformly remove a thin film such as an oxidation protective film provided in order to prevent autodoping of semiconductor substrates used as substrates of various semiconductor devices. This invention relates to an oxide film removal method and apparatus.
【０００２】0002
【従来の技術】シリコン基板は、アクセプタとなるボロ
ンＢまたはドナーとなるリンＰ、ヒ素Ａｓ、アンチモン
Ｓｂを添加し、いわゆるドーピングにより導電形や電気
抵抗の制御が行われている。2. Description of the Related Art Silicon substrates are doped with boron B as an acceptor, phosphorus P, arsenic As, and antimony Sb as donors, and conductivity type and electrical resistance are controlled by so-called doping.
【０００３】このドーピングしたシリコン基板を高温に
加熱して気相成長を行うと、オートドーピング現象が起
り、添加した不純物がエピタキシャル層中に取込まれ電
気特性が変動する。When this doped silicon substrate is heated to a high temperature and subjected to vapor phase growth, an autodoping phenomenon occurs, and the added impurities are incorporated into the epitaxial layer, causing variations in electrical characteristics.
【０００４】上記オートドーピング現象を防止するため
、一般には基板裏面にシリコン酸化膜などの保護膜を形
成することが行われている（特開昭６２−１２８５２０
号公報）。しかし、かかる保護膜は後述の如く、後工程
で種々の問題をもたらしている。In order to prevent the above-mentioned autodoping phenomenon, a protective film such as a silicon oxide film is generally formed on the back surface of the substrate (Japanese Patent Laid-Open No. 128520/1983).
Publication No.). However, such a protective film causes various problems in post-processing as described below.
【０００５】例えば図４に示すノジュール１１は、半導
体基板６の面取り周縁部９に形成された多孔質なＳｉＯ
２膜を通してシリコンが多結晶の小瘤として異常成長し
たものである。このノジュール１１は搬送中に破壊され
てパーティクルが発生し、結晶性が著しく劣化したり、
ディバイスプロセスに汚染を与えるなどの悪影響を及ぼ
す。For example, the nodule 11 shown in FIG.
This is an abnormal growth of silicon as polycrystalline nodules through two films. This nodule 11 is destroyed during transportation, generates particles, and its crystallinity deteriorates significantly.
It has an adverse effect such as contaminating the device process.
【０００６】そこで、気相成長を行う前に面取り部のＳ
ｉＯ２膜を取り除く必要があり、従来は図５、図６に示
すように、半導体基板６にＨＦ水溶液を浸した綿棒１０
を押し当ててＳｉＯ２膜を除去すべき部分の周縁部９を
拭き取っていた。また、多数の半導体基板を処理するた
めに、一定間隔で並列させて回転可能に保持した半導体
基板のＳｉＯ２膜を除去すべき部分に当接するように、
ＨＦ水溶液を含浸したロール状のパッドを当てて、半導
体基板を回転させる装置が提案されている。Therefore, before performing vapor phase growth, the S of the chamfered portion is
It is necessary to remove the iO2 film, and conventionally, as shown in FIGS. 5 and 6, a cotton swab 10 soaked in an HF aqueous solution is used to
The peripheral edge 9 of the area where the SiO2 film was to be removed was wiped by pressing against it. In addition, in order to process a large number of semiconductor substrates, the SiO2 film of the semiconductor substrates, which are rotatably held in parallel at regular intervals, is placed in contact with the part to be removed.
An apparatus has been proposed in which a semiconductor substrate is rotated by applying a roll-shaped pad impregnated with an HF aqueous solution.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、前記従
来の方法では、半導体基板の大口径化に伴い、ＨＦを浸
した綿棒、パッドにてふき取るウエーハ周縁部長さが長
くなるため、その分多量のＨＦ水溶液を綿棒、パッドに
浸す必要が生じ、そのためＨＦ水溶液がにじみ、半導体
基板面内にＨＦ水溶液が流れこみ、必要以上のシリコン
酸化膜を除去したり、ＨＦ水溶液量が不足して、シリコ
ン酸化膜を除去し残す、所謂除去むらが生じることがあ
る。この発明は、半導体ウェーハの酸化保護膜などの薄
膜を所要部分だけ除去むらなく除去できる半導体基板の
酸化膜除去方法及びその装置を提供することを目的とし
ている。[Problems to be Solved by the Invention] However, in the conventional method, as the diameter of semiconductor substrates increases, the periphery of the wafer that needs to be wiped with a cotton swab or pad soaked in HF becomes longer. It becomes necessary to soak a cotton swab or pad in the aqueous solution, and as a result, the HF aqueous solution bleeds and flows into the surface of the semiconductor substrate, which may remove more silicon oxide film than necessary, or the amount of HF aqueous solution may be insufficient, resulting in a silicon oxide film. What is called uneven removal may occur, where some parts are removed and left behind. SUMMARY OF THE INVENTION An object of the present invention is to provide a method and apparatus for removing an oxide film on a semiconductor substrate, which can uniformly remove a required portion of a thin film such as an oxidation protective film on a semiconductor wafer.
【０００８】[0008]
【課題を解決するための手段】この発明は、半導体基板
表面に設けた薄膜を部分的に除去するに際し、半導体基
板を薄膜の非除去部を吸着板にて吸着保持して溶液に浸
漬させ、薄膜の除去予定部において槽内の溶液を吸引し
て所要部の薄膜を溶解除去することを特徴とする半導体
基板の薄膜除去方法である。[Means for Solving the Problems] In the present invention, when partially removing a thin film provided on the surface of a semiconductor substrate, the semiconductor substrate is immersed in a solution while holding the unremoved portion of the thin film by suction with a suction plate. This method of removing a thin film from a semiconductor substrate is characterized in that a solution in a tank is sucked in a portion where the thin film is to be removed to dissolve and remove the thin film at a desired portion.
【０００９】また、この発明は、薄膜の非除去部に対向
する位置に半導体基板を吸着保持するため吸着孔を設け
、薄膜の除去予定部に対向する位置に溶液の吸引孔を設
け、吸着孔と吸引孔との間に大気との開放孔を設けた吸
着板からなり、半導体基板を吸着板に吸着し溶液に浸漬
させた際に、所要部分より槽内の溶液と空気を同時に吸
引可能にしたことを特徴とする半導体基板の薄膜除去装
置である。In addition, the present invention provides a suction hole for sucking and holding the semiconductor substrate at a position opposite to a portion of the thin film that is not to be removed, a suction hole for a solution is provided at a position opposite to a portion of the thin film that is to be removed, and the suction hole It consists of a suction plate with an open hole to the atmosphere between the suction hole and the suction hole, and when a semiconductor substrate is adsorbed to the suction plate and immersed in the solution, the solution and air in the tank can be simultaneously suctioned from the required parts. This is a thin film removal apparatus for semiconductor substrates, which is characterized by the following.
【００１０】0010
【作用】この発明による薄膜除去方法は、半導体基板の
薄膜の除去予定部に対応させて、吸着板に除去したいパ
ターンで溶液吸引溝を作成し、吸着板に薄膜の非除去部
で半導体基板を吸着保持させ、これを溶液中に浸漬し、
所要の部分へ槽内の溶液を吸引することにより、溶液が
侵入した部分において薄膜が溶解除去されるが、他部分
は溶液が侵入しないため薄膜が除去されずに残り、予め
吸着板に設定したパターンで薄膜の所要部を除去むらな
く均一に除去することができる。[Operation] In the thin film removal method according to the present invention, solution suction grooves are created on the suction plate in a pattern to be removed, corresponding to the portions of the thin film on the semiconductor substrate to be removed, and the semiconductor substrate is placed on the suction plate in the portions of the thin film that are not to be removed. hold it by adsorption, immerse it in a solution,
By suctioning the solution in the tank to the required area, the thin film is dissolved and removed in the area where the solution has entered, but the thin film remains unremoved because the solution does not enter other areas, and the thin film is not removed and is set in advance on the suction plate. The desired portion of the thin film can be removed evenly and uniformly using the pattern.
【００１１】さらに、吸着孔と吸引孔との間に大気との
開放孔を設けた吸着板を用い、これを溶液中に浸漬して
所要部分へ槽内の溶液を吸引する際に、同時に開放孔か
ら空気を吸引することにより溶液の拡散を防止でき、所
要部分以外の薄膜が除去されるのを防止することで、薄
膜の所要部を除去むらなく均一に除去することができる
。[0011] Furthermore, a suction plate having an open hole to the atmosphere between the suction hole and the suction hole is used, and when the suction plate is immersed in the solution and the solution in the tank is sucked into the required part, the suction plate is opened at the same time. By suctioning air through the holes, diffusion of the solution can be prevented, and by preventing the thin film from being removed from areas other than the required areas, the required areas of the thin film can be removed evenly and uniformly.
【００１２】この発明において、吸着板に設ける吸着支
持のための吸着孔、溶液の吸引孔、大気の開放孔は、薄
膜の除去予定部に対応させたパターンで形成されるが、
吸着、吸引時に半導体ウェーハに反りを生じさせないパ
ターン、寸法を適宜選定する必要があり、溶液の吸引孔
はできるだけ細幅のものが好ましく、大気の開放孔は、
溶液の吸引孔に平行して設けできるだけ細幅のものが好
ましく、特に除去むらなく除去面と薄膜との境をシャー
プにするには、大気の開放孔の配置が重要になる。In the present invention, the suction holes for suction support, the solution suction holes, and the atmosphere opening holes provided on the suction plate are formed in a pattern corresponding to the portion of the thin film to be removed.
It is necessary to appropriately select a pattern and dimensions that will not cause warping of the semiconductor wafer during suction and suction, and the suction hole for the solution should preferably be as narrow as possible, and the hole open to the atmosphere should be
It is preferable that the opening be as narrow as possible so as to be provided parallel to the suction hole for the solution, and the arrangement of the opening for the atmosphere is particularly important in order to ensure uniform removal and to sharpen the boundary between the removal surface and the thin film.
【００１３】吸着支持のための減圧吸着は、５０〜７０
ｃｍＨｇの減圧が好ましい。また、溶液の吸引力は、吸
引孔や大気の開放孔の配置に応じて、半導体ウェーハに
反りを生じさせないよう設定する必要がある。[0013] Vacuum adsorption for adsorption support is 50 to 70
A vacuum of cmHg is preferred. Further, the suction force of the solution needs to be set so as not to cause warping of the semiconductor wafer, depending on the arrangement of the suction holes and the air vents.
【００１４】[0014]
【実施例】この発明による薄膜除去装置は、ＨＦ液８を
入れる溶液槽１と半導体基板６を吸着する吸着板２から
なる。吸着板２には半導体基板６を吸着するための吸着
孔４があり、また、溶液槽１からのＨＦ液８を吸引しか
つ開放孔３からの空気を吸引するための吸引孔５が設け
てある。かかる構成からなる薄膜除去装置を用いて、半
導体基板６上のシリコン酸化膜７のうち周縁部９の部分
を除去するには、まず、槽外で半導体基板６を吸着孔５
によって真空で吸着させ、溶液槽１へ吸着板２及び吸着
した半導体基板６を浸漬させ、吸引孔５からＨＦ液８と
空気を吸引する。ＨＦ濃度、薄膜厚みによって除去され
る時間に差があるが、例えば、ＨＦ濃度２５％、６００
０Å厚みのＳｉＯ２であれば、１５秒ほどで薄膜の除去
を完了する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A thin film removing apparatus according to the present invention comprises a solution tank 1 containing an HF solution 8 and a suction plate 2 for adsorbing a semiconductor substrate 6. The suction plate 2 has suction holes 4 for suctioning the semiconductor substrate 6, and suction holes 5 for suctioning the HF liquid 8 from the solution tank 1 and air from the open holes 3. be. In order to remove the peripheral edge portion 9 of the silicon oxide film 7 on the semiconductor substrate 6 using the thin film removal apparatus having such a configuration, the semiconductor substrate 6 is first placed in the suction hole 5 outside the tank.
The suction plate 2 and the adsorbed semiconductor substrate 6 are immersed in the solution bath 1, and the HF liquid 8 and air are suctioned through the suction hole 5. The removal time varies depending on the HF concentration and thin film thickness, but for example, HF concentration of 25%, 600%
In the case of SiO2 having a thickness of 0 Å, removal of the thin film is completed in about 15 seconds.
【００１５】[0015]
【発明の効果】この発明は半導体基板を薄膜の非除去部
を吸着板にて吸着保持して溶液に浸漬させ、薄膜の除去
予定部において槽内の溶液を吸引して所要部の薄膜を溶
解除去するもので、実施例に明らかな如く、半導体基板
の薄膜を所要部分だけ除去でき、除去残りや溶かしすぎ
等の除去むらもなく除去でき、除去後の薄膜の形状性が
極めて良好になる半導体基板の薄膜除去方法である。[Effects of the Invention] In this invention, a semiconductor substrate is immersed in a solution by suctioning and holding the non-removed portion of the thin film with a suction plate, and the solution in the tank is sucked at the portion where the thin film is to be removed to dissolve the thin film in the required portion. As is clear from the examples, it is possible to remove only the required portion of the thin film of the semiconductor substrate, and it can be removed without uneven removal such as unremoved residue or excessive melting, and the shape of the thin film after removal is extremely good. This is a method for removing a thin film from a substrate.
【図１】この発明よる薄膜除去方法を実施するための吸
着板を示す断面説明図である。FIG. 1 is an explanatory cross-sectional view showing a suction plate for carrying out the thin film removal method according to the present invention.
【図２】この発明よる薄膜除去方法によって処理された
半導体基板の説明図である。FIG. 2 is an explanatory diagram of a semiconductor substrate processed by the thin film removal method according to the present invention.
【図３】半導体基板の周縁部の酸化膜を示す断面説明図
である。FIG. 3 is an explanatory cross-sectional view showing an oxide film at the peripheral edge of a semiconductor substrate.
【図４】半導体基板のノジュールを示す断面説明図であ
る。FIG. 4 is an explanatory cross-sectional view showing a nodule of a semiconductor substrate.
【図５】従来の半導体基板の薄膜除去方法を示す斜視説
明図である。FIG. 5 is a perspective explanatory view showing a conventional method for removing a thin film from a semiconductor substrate.
【図６】従来の半導体基板の薄膜除去方法を示す斜視説
明図である。FIG. 6 is a perspective explanatory view showing a conventional method for removing a thin film from a semiconductor substrate.
１ 溶液槽 ２ 吸着板 ３ 開放孔 ４ 吸着孔 ５ 吸引孔 ６ 半導体基板 ７ シリコン酸化膜 ８ ＨＦ液 ９ 周縁部 １０ 綿棒 １１ ノジュール 1 Solution tank 2 Adsorption plate 3 Open hole 4 Suction hole 5 Suction hole 6 Semiconductor substrate 7 Silicon oxide film 8 HF liquid 9 Peripheral area 10 Cotton swab 11 Nodule
Claims (2)
に除去するに際し、半導体基板を薄膜の非除去部を吸着
板にて吸着保持して溶液に浸漬させ、薄膜の除去予定部
において槽内の溶液を吸引して所要部の薄膜を溶解除去
することを特徴とする半導体基板の薄膜除去方法。[Claim 1] When partially removing a thin film provided on the surface of a semiconductor substrate, the semiconductor substrate is immersed in a solution with the non-removed portion of the thin film held by a suction plate, and the portion of the thin film to be removed is placed in a tank. 1. A method for removing a thin film from a semiconductor substrate, the method comprising dissolving and removing a thin film at a desired portion by suctioning a solution.
体基板を吸着保持するため吸着孔を設け、薄膜の除去予
定部に対向する位置に溶液の吸引孔を設け、吸着孔と吸
引孔との間に大気との開放孔を設けた吸着板からなり、
半導体基板を吸着板に吸着し溶液に浸漬させた際に、所
要部分より槽内の溶液と空気を同時に吸引可能にしたこ
とを特徴とする半導体基板の薄膜除去装置。2. A suction hole is provided to hold the semiconductor substrate by suction at a position opposite to a portion of the thin film that is not to be removed, a suction hole for a solution is provided at a position opposite to a portion of the thin film that is to be removed, and the suction hole and the suction hole are connected to each other. It consists of a suction plate with an open hole between it and the atmosphere.
A thin film removal device for a semiconductor substrate, characterized in that when the semiconductor substrate is adsorbed to a suction plate and immersed in a solution, the solution and air in the tank can be simultaneously sucked from required parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14135491A JPH081901B2 (en) | 1991-05-16 | 1991-05-16 | Method and apparatus for removing thin film from semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14135491A JPH081901B2 (en) | 1991-05-16 | 1991-05-16 | Method and apparatus for removing thin film from semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04340225A true JPH04340225A (en) | 1992-11-26 |
| JPH081901B2 JPH081901B2 (en) | 1996-01-10 |
Family
ID=15290027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14135491A Expired - Lifetime JPH081901B2 (en) | 1991-05-16 | 1991-05-16 | Method and apparatus for removing thin film from semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081901B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19728962A1 (en) * | 1997-06-30 | 1999-01-07 | Siemens Ag | Sealed holder for semiconductor wafer etching |
-
1991
- 1991-05-16 JP JP14135491A patent/JPH081901B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19728962A1 (en) * | 1997-06-30 | 1999-01-07 | Siemens Ag | Sealed holder for semiconductor wafer etching |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH081901B2 (en) | 1996-01-10 |
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