JPH04334093A - Manufacture of multilayered wiring board - Google Patents
Manufacture of multilayered wiring boardInfo
- Publication number
- JPH04334093A JPH04334093A JP10301991A JP10301991A JPH04334093A JP H04334093 A JPH04334093 A JP H04334093A JP 10301991 A JP10301991 A JP 10301991A JP 10301991 A JP10301991 A JP 10301991A JP H04334093 A JPH04334093 A JP H04334093A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- cu2o
- wiring board
- cuo
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000011282 treatment Methods 0.000 claims abstract description 55
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 42
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000853 adhesive Substances 0.000 claims abstract description 30
- 230000001070 adhesive effect Effects 0.000 claims abstract description 30
- 239000011889 copper foil Substances 0.000 claims abstract description 19
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims description 28
- 238000007254 oxidation reaction Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000002253 acid Substances 0.000 abstract description 17
- 229910052802 copper Inorganic materials 0.000 abstract description 14
- 239000010949 copper Substances 0.000 abstract description 14
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 230000001590 oxidative effect Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 64
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 238000007747 plating Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 4
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 4
- 229960002218 sodium chlorite Drugs 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910003556 H2 SO4 Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 dilute sulfuric acid Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000004715 keto acids Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、接着性絶縁層を介し積
層された複数枚の内層用回路板を備える多層配線板とそ
の製造方法に係り、特に、内層用回路板に設けられた銅
箔製の配線層と上記接着性絶縁層との接着不良が防止で
きると共に製造工程途上で適用された適宜処理剤が上記
配線層と接着性絶縁層との界面に残留し難い多層配線板
とその製造方法に関する。[Field of Industrial Application] The present invention relates to a multilayer wiring board comprising a plurality of inner layer circuit boards laminated with adhesive insulating layers interposed therebetween, and a method for manufacturing the same. A multilayer wiring board capable of preventing poor adhesion between a foil wiring layer and the adhesive insulating layer, and in which an appropriate treatment agent applied during the manufacturing process is difficult to remain at the interface between the wiring layer and the adhesive insulating layer, and the same. Regarding the manufacturing method.
【０００２】0002
【従来の技術】この種の多層配線板は、例えば、図４〜
図１０に示すような各工程を経て製造されている。以下
その概略を説明すると、図４に示すように銅箔により形
成された配線層を有する複数枚の内層用回路板ａを外層
用銅箔ａ１と共に接着性絶縁層（プリプレグ）ｂを介し
積層して一体化し、かつ、適宜穿設手段により図５に示
すようなスルーホールｃを穿設（ドリリング）した後、
このスルーホールｃの内壁面を銅箔にて覆うため銅によ
るスルーホールめっき処理を施して図６に示すようなめ
っき層ｄを積層体表面とスルーホールｃ内壁面にそれぞ
れ形成する。[Prior Art] This type of multilayer wiring board is, for example, shown in FIGS.
It is manufactured through various steps as shown in FIG. To explain the outline below, as shown in FIG. 4, a plurality of inner layer circuit boards a having wiring layers formed of copper foil are laminated together with an outer layer copper foil a1 via an adhesive insulating layer (prepreg) b. After integrating the parts and drilling a through hole c as shown in FIG. 5 using an appropriate drilling means,
In order to cover the inner wall surface of the through hole c with copper foil, a through hole plating process with copper is performed to form a plating layer d as shown in FIG. 6 on the surface of the laminate and the inner wall surface of the through hole c, respectively.
【０００３】次いで、このめっき層ｄの面上にスルーホ
ールｃ周辺の一部と配線層形成部位を除きフォトレジス
ト層ｅをパターン状に形成する（図７参照）と共に、こ
のフォトレジスト層ｅから露出する部位に銅・はんだめ
っき層ｆを形成（図８参照）し、かつ、上記フォトレジ
スト層ｅを除去した後、この銅・はんだめっき層ｆをマ
スクにして図９に示すように上記めっき層ｄ等をエッチ
ングにより除去し、更にこれ等面上にソルダー・レジス
ト層ｇを成膜して図１０に示すような多層配線板ｈを製
造する方法が採られている。Next, a photoresist layer e is formed in a pattern on the surface of this plating layer d, excluding a part around the through hole c and the wiring layer formation area (see FIG. 7), and a photoresist layer e is formed from this photoresist layer e. After forming a copper/solder plating layer f on the exposed portion (see FIG. 8) and removing the photoresist layer e, the copper/solder plating layer f is used as a mask to remove the plating as shown in FIG. A method is adopted in which layers d and the like are removed by etching, and a solder resist layer g is further formed on these surfaces to produce a multilayer wiring board h as shown in FIG.
【０００４】ところで、上記複数枚の内層用回路板ａを
接着性絶縁層（プリプレグ）ｂを介して積層する際、内
層用回路板ａに設けられた配線層が表面平滑な銅箔によ
り構成されているため上記接着性絶縁層ｂとの接着強度
が不十分となり配線層と接着性絶縁層ｂとが経時的に剥
離し易い欠点があった。By the way, when the plurality of inner layer circuit boards a are laminated via adhesive insulating layers (prepreg) b, the wiring layer provided on the inner layer circuit board a is made of copper foil with a smooth surface. As a result, the adhesive strength with the adhesive insulating layer b is insufficient, resulting in a drawback that the wiring layer and the adhesive insulating layer b tend to separate over time.
【０００５】このため、従来においては図１１の（Ａ）
〜（Ｂ）に示すように銅箔より成る配線層ｉの表面を、
例えば、水酸化ナトリウム（ＮａＯＨ）が１５〜２５ｇ
／ｌ程度溶解されたアルカリ性亜塩素酸ナトリウム水溶
液等で酸化処理してＣｕＯとＣｕ２ Ｏより成る針状結
晶の酸化膜ｊを形成し、上記配線層ｉの表面を粗面化さ
せて接着性絶縁層ｂとの接着強度の向上を図る方法が採
られている。For this reason, in the past, (A) in FIG.
~ As shown in (B), the surface of the wiring layer i made of copper foil is
For example, 15-25g of sodium hydroxide (NaOH)
An acicular crystal oxide film j consisting of CuO and Cu2O is formed by oxidation treatment with an alkaline sodium chlorite aqueous solution dissolved at a concentration of about /l, and the surface of the wiring layer i is roughened to form an adhesive insulator. A method has been adopted to improve the adhesive strength with layer b.
【０００６】[0006]
【発明が解決しようとする課題】このような方法を採る
ことで全体的には配線層ｉと接着性絶縁層ｂとの接着強
度の向上が図れる反面、ＣｕＯとＣｕ２ Ｏとで構成さ
れた酸化膜ｊはアルカリ溶液に対し耐性を有するものの
酸には比較的容易に溶解されてしまうため、多層配線板
の製造工程途上において図１２（Ａ）に示すようにスル
ーホールｃの内壁面から露出する積層面が酸性の処理剤
に触れた場合（例えば上述したスルーホールめっき処理
の際、化学銅めっきに対する触媒性を付与するため塩酸
酸性のパラジウム・錫水溶液にて処理するような場合）
、その接触部位の酸化膜ｊが図１２（Ｂ）に示すように
酸により溶解して上記配線層ｉの金属銅が露出され、図
１３に示すようにピンク色のリングｒがスルーホールｃ
の周縁に沿って形成される“ハローイング”と称される
現象が発生することがあった。[Problem to be solved by the invention] By adopting such a method, the overall adhesive strength between the wiring layer i and the adhesive insulating layer b can be improved; Although the film j is resistant to alkaline solutions, it is relatively easily dissolved in acids, so it is exposed from the inner wall surface of the through hole c during the manufacturing process of the multilayer wiring board, as shown in FIG. 12(A). When the laminated surface comes into contact with an acidic treatment agent (for example, during the above-mentioned through-hole plating treatment, when the layer is treated with an acidic palladium/tin aqueous solution of hydrochloric acid to impart catalytic properties to chemical copper plating)
As shown in FIG. 12(B), the oxide film j at the contact portion is dissolved by acid to expose the metal copper of the wiring layer i, and the pink ring r is connected to the through hole c as shown in FIG.
A phenomenon called "haloing", which is formed along the periphery of the disk, sometimes occurs.
【０００７】そして、この現象が発生すると図１４に示
すようにスルーホールｃ内壁面の配線層ｉと接着性絶縁
層ｂとの界面に空隙ｓが形成されてしまうためこれ等間
の接着強度の低下が起こって経時的に剥離し易くなる問
題点があり、かつ、この空隙ｓ内に上記処理剤が残留し
易くなるため多層配線板としての信頼性を著しく低下さ
せる問題点があった。When this phenomenon occurs, a gap s is formed at the interface between the wiring layer i on the inner wall surface of the through hole c and the adhesive insulating layer b, as shown in FIG. There is a problem that deterioration occurs and the treatment agent tends to peel over time, and the processing agent tends to remain in the voids s, resulting in a problem that the reliability as a multilayer wiring board is significantly lowered.
【０００８】このような技術的背景の下において本発明
者等が上記酸化膜ｊに耐酸性を付与する方法を鋭意研究
したところ、従来法において酸化膜ｊが耐酸性を示さな
い原因は酸により容易に溶解されるＣｕＯが上記酸化膜
ｊ中に多量に存在するためで、このＣｕＯの比率を下げ
比較的耐酸性を有するＣｕ２ Ｏの比率を上げることに
より酸化膜ｊに耐酸性を付与できることを見出し本発明
を完成するに至ったものである。Against this technical background, the inventors of the present invention have conducted intensive research on a method for imparting acid resistance to the oxide film j, and have found that the reason why the oxide film j does not exhibit acid resistance in the conventional method is due to the presence of acid. This is because a large amount of CuO, which is easily dissolved, exists in the oxide film j, and it is possible to impart acid resistance to the oxide film j by lowering the ratio of CuO and increasing the ratio of Cu2O, which has relatively acid resistance. Heading This is what led to the completion of the present invention.
【０００９】因みに、従来法における酸化膜中のＣｕ２
ＯのＣｕＯに対する比（Ｃｕ２ Ｏ／ＣｕＯ×１００
）は３０〜４０％程度であり、また、上記ハローイング
の発生量（図１３中、直径０．３５ｍｍのスルーホール
ｃ周縁からの距離Ｌで示されるリングの幅により表示さ
れる）は平均で１３０〜１５０μｍ以上であり数百μｍ
になることもあった。Incidentally, Cu2 in the oxide film in the conventional method
Ratio of O to CuO (Cu2O/CuO×100
) is about 30 to 40%, and the amount of haloing (indicated by the width of the ring indicated by the distance L from the periphery of the through hole c with a diameter of 0.35 mm in Fig. 13) is on average. 130 to 150 μm or more and several hundred μm
Sometimes it became.
【００１０】そこで、本発明の課題とするところは、上
記ハローイングの発生量を１００μｍ以下にすることに
より内層用回路板に設けられた銅箔製の配線層と上記接
着性絶縁層との接着不良が防止できると共に製造工程途
上で適用された適宜処理剤が上記配線層と接着性絶縁層
との界面に残留し難い多層配線板とその製造方法を提供
することにある。[0010] Therefore, an object of the present invention is to improve the adhesion between the copper foil wiring layer provided on the inner layer circuit board and the adhesive insulating layer by reducing the amount of haloing generated to 100 μm or less. It is an object of the present invention to provide a multilayer wiring board which can prevent defects and which prevents a suitable treatment agent applied during the manufacturing process from remaining on the interface between the wiring layer and the adhesive insulating layer, and a method for manufacturing the same.
【００１１】[0011]
【課題を解決するための手段】すなわち請求項１に係る
発明は、ＣｕＯとＣｕ２ Ｏの酸化膜が表面に形成され
た銅箔製の配線層を有する内層用回路板が接着性絶縁層
を介し複数積層されて成る多層配線板を前提とし、上記
酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８０％以
上に設定されていることを特徴とするものであり、他方
、請求項２に係る発明は、ＣｕＯとＣｕ２ Ｏの酸化膜
が表面に形成された銅箔製の配線層を有する内層用回路
板が接着性絶縁層を介し複数積層されて成る多層配線板
を前提とし、上記酸化膜中におけるＣｕ２ Ｏ／ＣｕＯ
の比率が８０％以上でその酸化膜の膜厚が０．４μｍ〜
０．８μｍに設定されていることを特徴とするものであ
る。[Means for Solving the Problems] In other words, the invention according to claim 1 is such that an inner layer circuit board having a wiring layer made of copper foil on the surface of which an oxide film of CuO and Cu2O is formed is connected via an adhesive insulating layer. The present invention is based on a multilayer wiring board formed by laminating a plurality of layers, and is characterized in that the ratio of Cu2O/CuO in the oxide film is set to 80% or more. , assumes a multilayer wiring board consisting of a plurality of inner layer circuit boards laminated with adhesive insulating layers interposed therebetween, each having a wiring layer made of copper foil with an oxide film of CuO and Cu2O formed on the surface. Cu2O/CuO
The ratio of 80% or more and the thickness of the oxide film is 0.4 μm ~
It is characterized by being set to 0.8 μm.
【００１２】また、請求項３に係る発明は、銅箔により
形成された配線層を有する内層用回路板の上記配線層を
酸化処理してその表面にＣｕＯとＣｕ２ Ｏからなる酸
化膜を形成し、かつ、酸化処理されたこれ等複数枚の内
層用回路板を接着性絶縁層を介し積層して多層配線板を
製造する方法を前提とし、酸化膜中におけるＣｕ２ Ｏ
／ＣｕＯの比率が８０％以上となる条件で上記酸化処理
を施すことを特徴とするものであり、他方、請求項４に
係る発明は、銅箔により形成された配線層を有する内層
用回路板の上記配線層を酸化処理してその表面にＣｕＯ
とＣｕ２ Ｏからなる酸化膜を形成し、かつ、酸化処理
されたこれ等複数枚の内層用回路板を接着性絶縁層を介
し積層して多層配線板を製造する方法を前提とし、酸化
膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８０％以上で
その酸化膜の膜厚が０．４μｍ〜０．８μｍとなる条件
で上記酸化処理を施すことを特徴とするものである。Further, the invention according to claim 3 is characterized in that the wiring layer of the inner layer circuit board having the wiring layer formed of copper foil is oxidized to form an oxide film consisting of CuO and Cu2O on the surface thereof. , and based on the method of manufacturing a multilayer wiring board by laminating a plurality of these oxidized inner layer circuit boards with adhesive insulating layers interposed therebetween, Cu2O in the oxide film is
The invention is characterized in that the oxidation treatment is performed under conditions such that the ratio of /CuO is 80% or more.On the other hand, the invention according to claim 4 provides an inner layer circuit board having a wiring layer formed of copper foil. The wiring layer is oxidized and CuO is deposited on its surface.
The method is based on the method of manufacturing a multilayer wiring board by forming an oxide film consisting of The oxidation treatment is performed under conditions such that the ratio of Cu2O/CuO is 80% or more and the thickness of the oxide film is 0.4 μm to 0.8 μm.
【００１３】このような技術的手段において上記配線層
を酸化処理するための処理液としては、従来同様、アル
カリ性亜塩素酸ナトリウム水溶液やアルカリ性過硫酸カ
リ水溶液等がそのまま適用でき、また、その処理方法も
従来同様、予め脱脂処理された内層用回路板を上記処理
液に浸漬することによって行われる。As the treatment liquid for oxidizing the wiring layer in such technical means, alkaline sodium chlorite aqueous solution, alkaline potassium persulfate aqueous solution, etc. can be used as is, as in the past, and the treatment method Similarly to the conventional method, the inner layer circuit board, which has been previously degreased, is immersed in the above-mentioned treatment liquid.
【００１４】この場合、酸化膜中におけるＣｕ２ Ｏ／
ＣｕＯの比率が８０％以上になるようにその処理温度を
従来の９０〜９５℃からこれより低い７０〜８５℃程度
に、また、処理時間を従来の４分３０秒からこれより短
い時間に設定することが望ましい。また、上記アルカリ
性亜塩素酸ナトリウム水溶液やアルカリ性過硫酸カリ水
溶液のアルカリ濃度を従来より高く設定することにより
簡単に達成することができる。In this case, Cu2O/
The processing temperature was set from the conventional 90-95°C to a lower 70-85°C so that the CuO ratio was 80% or more, and the processing time was set from the conventional 4 minutes 30 seconds to a shorter time. It is desirable to do so. Moreover, it can be easily achieved by setting the alkaline concentration of the alkaline sodium chlorite aqueous solution or alkaline potassium persulfate aqueous solution higher than conventional ones.
【００１５】尚、この様な条件で酸化処理を施した場合
にＣｕ２ Ｏ／ＣｕＯの比率が８０％以上となる理由に
ついては未だ十分に解明されてないが、上記条件に設定
すると『Ｃｕ２ Ｏ→ＣｕＯ』の反応が抑制されＣｕＯ
の比率が下がることに起因しているものと推察している
。[0015] The reason why the Cu2O/CuO ratio becomes 80% or more when oxidation treatment is carried out under these conditions is not yet fully elucidated, but when the above conditions are set, "Cu2O→ CuO” reaction is suppressed and CuO
We speculate that this is due to a decrease in the ratio of
【００１６】また、２段階処理により上記Ｃｕ２ Ｏの
比率をより高めた酸化膜を形成してもよい。すなわち、
アルカリ性亜塩素酸ナトリウム水溶液やアルカリ性過硫
酸カリ水溶液等のアルカリ性酸化処理液で１回目の酸化
処理を施して銅箔表面にＣｕ２ ＯとＣｕＯの酸化膜を
形成する。この場合、Ｃｕ２ Ｏの結晶は酸化膜の表面
側から内側へ成長する傾向があるのに対しＣｕＯの結晶
は酸化膜の内側から表面側へ成長する傾向があるため、
酸化膜の表面側はＣｕＯの結晶で覆われ酸化膜の内側に
Ｃｕ２ Ｏの結晶が多く存在する傾向にある。従って、
この酸化膜表面をエッチング処理してその表面側に多量
に存在するＣｕＯ結晶を除去することにより酸化膜中の
Ｃｕ２ Ｏの比率を高めることができる。次に、１回目
のアルカリ性酸化処理液よりそのアルカリ濃度が高いア
ルカリ性酸化処理液で２回目の酸化処理を施すことによ
り酸化膜中のＣｕ２ Ｏの比率を更に高めることが可能
となる。尚、最初の酸化処理と２回目の酸化処理とを共
にアルカリ濃度の高いアルカリ性酸化処理液で行っても
も当然のことながらよい。また、１回目の酸化処理で形
成した酸化膜のエッチング条件としてはこの酸化膜を溶
解しうる酸性溶液、例えば、希硫酸等のオキソ酸、希塩
酸に代表される塩基酸、ハロゲン化水素酸、アンモニア
水等が適用できる。また、このエッチングの処理時間は
その酸化膜の厚さが０．２μｍ前後、好ましくは０．１
５〜０．２０μｍ程度残るまで、例えば、十数秒ないし
３０秒間程度とする。[0016] Furthermore, an oxide film having a higher proportion of Cu2O may be formed by a two-step process. That is,
A first oxidation treatment is performed using an alkaline oxidation treatment solution such as an alkaline sodium chlorite aqueous solution or an alkaline potassium persulfate aqueous solution to form an oxide film of Cu2O and CuO on the surface of the copper foil. In this case, Cu2O crystals tend to grow from the surface of the oxide film to the inside, whereas CuO crystals tend to grow from the inside of the oxide film to the surface.
The surface side of the oxide film tends to be covered with CuO crystals, and many Cu2O crystals exist inside the oxide film. Therefore,
By etching the surface of this oxide film to remove a large amount of CuO crystals present on the surface side, the ratio of Cu2O in the oxide film can be increased. Next, by performing a second oxidation treatment using an alkaline oxidation treatment liquid whose alkaline concentration is higher than that of the first alkaline oxidation treatment liquid, it becomes possible to further increase the ratio of Cu2O in the oxide film. It goes without saying that both the first oxidation treatment and the second oxidation treatment may be performed using an alkaline oxidation treatment solution with a high alkali concentration. In addition, the etching conditions for the oxide film formed in the first oxidation treatment include acidic solutions that can dissolve this oxide film, such as oxoacids such as dilute sulfuric acid, basic acids such as dilute hydrochloric acid, hydrohalic acid, and ammonia. Water etc. can be applied. In addition, the processing time for this etching is such that the thickness of the oxide film is approximately 0.2 μm, preferably 0.1 μm.
For example, about ten to 30 seconds until about 5 to 0.20 μm remains.
【００１７】次に、上記酸化膜の膜厚については特に制
限はなく、従来同様、１．０μｍ前後の適宜値に設定可
能である。但し、この膜厚が大きくなると膜端部の露出
面積も大きくなり酸性の処理剤に触れた場合のサイドエ
ッチを受け易くなるため、好ましくは薄く設定した方が
よい。請求項２及び４に係る発明はこの様な観点からな
されたもので、酸化膜の膜厚を０．４μｍ〜０．８μｍ
程度に設定することで上記サイドエッチを受け難くなり
ハローイング現象が更に抑制される利点を有している。Next, there is no particular restriction on the thickness of the oxide film, and it can be set to an appropriate value of about 1.0 μm, as in the prior art. However, as the film thickness increases, the exposed area at the end of the film also increases, making it more susceptible to side etching when it comes into contact with an acidic treatment agent, so it is preferable to set the film thinner. The inventions according to claims 2 and 4 have been made from such a viewpoint, and the thickness of the oxide film is set to 0.4 μm to 0.8 μm.
By setting the thickness to a certain level, it is less susceptible to the side etching and has the advantage of further suppressing the haloing phenomenon.
【００１８】尚、上述の酸化処理がなされた内層用回路
板を積層した後における多層配線板の製造工程は任意で
あり、例えば、上述した従来法と同様な工程を経て製造
してもよいし他の工程を経てもよい。また、適用される
内層用回路板については、その一面側にのみ配線層を有
するものでもあるいは両面側にそれぞれ配線層を有する
ものでもよく任意である。[0018] The manufacturing process of the multilayer wiring board after laminating the inner layer circuit boards that have been subjected to the oxidation treatment described above is optional, and for example, it may be manufactured through the same process as the conventional method described above. Other steps may also be performed. Further, the inner layer circuit board to which the present invention is applied may be one having a wiring layer only on one side or one having wiring layers on both sides.
【００１９】[0019]
【作用】請求項１に係る発明によれば、配線層の表面に
形成された酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率
が８０％以上に設定されており、また、請求項３に係る
発明によれば、酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの
比率が８０％以上となる条件で配線層の酸化処理を施し
ていることから、耐酸性の大きいＣｕ２ Ｏの割合が増
大する分その酸化膜の耐酸性が向上するため、多層配線
板の製造工程途上において適宜酸処理を施しても上記配
線層の酸化膜が溶解され難くなり、配線層の金属銅が部
分的に露出するハローイング現象を抑制することが可能
になる。[Operation] According to the invention according to claim 1, the ratio of Cu2O/CuO in the oxide film formed on the surface of the wiring layer is set to 80% or more. According to the above, since the wiring layer is oxidized under conditions such that the ratio of Cu2O/CuO in the oxide film is 80% or more, the acid resistance of the oxide film increases as the proportion of Cu2O, which has high acid resistance, increases. As the properties are improved, the oxide film of the wiring layer becomes difficult to dissolve even if acid treatment is performed appropriately during the manufacturing process of the multilayer wiring board, and the haloing phenomenon in which the metallic copper of the wiring layer is partially exposed is suppressed. becomes possible.
【００２０】他方、請求項２に係る発明によれば、配線
層の表面に形成された酸化膜中におけるＣｕ２ Ｏ／Ｃ
ｕＯの比率が８０％でその酸化膜の膜厚が０．４μｍ〜
０．８μｍに設定されており、また、請求項４に係る発
明によれば、酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの比
率が８０％以上でその酸化膜の膜厚が従来法における膜
厚より小さな０．４μｍ〜０．８μｍとなる条件で酸化
処理を施していることから、酸化膜の耐酸性が向上しし
かも酸化膜の膜厚も薄くサイドエッチが起り難いため、
多層配線板の製造工程途上において適宜酸処理を施して
も上記配線層の酸化膜が更に溶解され難くなり、配線層
の金属銅が部分的に露出するハローイング現象をより確
実に抑制することが可能になる。On the other hand, according to the invention according to claim 2, Cu2O/C in the oxide film formed on the surface of the wiring layer
The ratio of uO is 80% and the thickness of the oxide film is 0.4 μm ~
According to the invention according to claim 4, the ratio of Cu2O/CuO in the oxide film is 80% or more and the thickness of the oxide film is smaller than that in the conventional method. Since the oxidation treatment is performed under the conditions of 0.4 μm to 0.8 μm, the acid resistance of the oxide film is improved, and the thickness of the oxide film is also thin, making it difficult for side etching to occur.
Even if appropriate acid treatment is performed during the manufacturing process of the multilayer wiring board, the oxide film of the wiring layer becomes more difficult to dissolve, and the haloing phenomenon in which the metallic copper of the wiring layer is partially exposed can be more reliably suppressed. It becomes possible.
【００２１】[0021]
【実施例】以下、本発明の実施例について図面を参照し
て詳細に説明する。Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
【００２２】［実施例１］まず、表裏両面に銅箔が貼着
されたガラス・エポキシ銅貼積層板（３４０ｍｍ×５１
０ｍｍ×１．６ｍｍ）を用い、従来同様、フォトエッチ
ング処理により上記銅箔をパターニングして内層用回路
板を製造した。[Example 1] First, a glass/epoxy copper laminate (340 mm x 51
0 mm x 1.6 mm), the copper foil was patterned by photo-etching in the same manner as before to manufacture an inner layer circuit board.
【００２３】次に、ニュウトラル・クリーン６８（商標
、シップレー社製）の２５％溶液を用い６０℃の条件で
上記内層用回路板の両面側に形成された銅箔製の配線層
を脱脂処理し、かつ、水洗した後、エッチ（Ｅｔｃｈ）
７４６（商標、シップレー社製）を１５％及びＨ２ Ｏ
２ を１０％含む処理液を用いて６０秒間のソフトエッ
チング処理を施しかつ水洗し、更に、硫酸を主成分とす
る固形酸（４４ｇ／ｌ）を用いて酸洗しかつ水洗した。Next, the copper foil wiring layers formed on both sides of the inner layer circuit board were degreased using a 25% solution of Neutral Clean 68 (trademark, manufactured by Shipley) at 60°C. , and after washing with water, etch
746 (trademark, manufactured by Shipley) at 15% and H2O
A soft etching process was performed for 60 seconds using a treatment solution containing 10% of 2, followed by washing with water, followed by pickling using a solid acid containing sulfuric acid as a main component (44 g/l) and washing with water.
【００２４】この様に前処理された内層用回路板の配線
層を以下の条件で酸化処理し図１に示すように配線層１
の表面にＣｕ２ ＯとＣｕＯから成る酸化膜２を形成し
た。The wiring layer of the inner layer circuit board pretreated in this way is oxidized under the following conditions to form wiring layer 1 as shown in FIG.
An oxide film 2 made of Cu2O and CuO was formed on the surface.
【００２５】
酸化処理液の組成：Ｎａ３ ＰＯ４ ・１２Ｈ
２ Ｏ １７ｇ／ｌ
ＮａＯＨ
３１ｇ／ｌ
ＮａＣｌＯ２
４３ｇ／ｌ 処理
液温度：８５℃ 処理時間：４
分尚、図１中、２１はＣｕＯを主成分とする酸化膜を、
また、２２はＣｕ２ Ｏを主成分とする酸化膜をそれぞ
れ示している。Composition of oxidation treatment liquid: Na3 PO4 ・12H
2 O 17g/l
NaOH
31g/l
NaClO2
43g/l Treatment liquid temperature: 85℃ Treatment time: 4
In addition, in Fig. 1, 21 is an oxide film whose main component is CuO.
Further, 22 indicates an oxide film containing Cu2O as a main component.
【００２６】また、上記酸化膜２の膜厚はオージェ分光
分析により１．０μｍであることがまたＣｕ２ Ｏ／Ｃ
ｕＯの比率は薄膜用Ｘ線回析装置により８０％であるこ
とが確認された。Furthermore, the thickness of the oxide film 2 was found to be 1.0 μm by Auger spectroscopy.
The uO ratio was confirmed to be 80% using a thin film X-ray diffraction apparatus.
【００２７】次いで、上記酸化膜２が形成された内層用
回路板を乾燥させた後、複数枚の内層用回路板を外層用
銅箔とともに接着性絶縁層を介して重合し、加熱加圧し
て多層配線板を製造した。Next, after drying the inner layer circuit board on which the oxide film 2 has been formed, the plurality of inner layer circuit boards are polymerized together with the outer layer copper foil via an adhesive insulating layer, and heated and pressed. A multilayer wiring board was manufactured.
【００２８】そして、従来と同様にこの多層配線板をド
リルにより孔開け加工して直径０．３５ｍｍのスルーホ
ールを形成し、かつ、従来同様酸洗等を行った後、スル
ーホールめっき処理（無電解銅めっき・パネルめっき）
を施してスルーホール内壁面と多層配線板表面に２０μ
ｍの銅めっき層を形成し、更に、水洗、酸洗等の常套処
理を施し、かつ、従来同様のフォトレジスト層形成処理
、２０μｍの電解銅めっき処理、エッチング処理、ソル
ダー・レジスト層形成処理等を経て多層配線板を製造し
た。Then, as in the conventional case, this multilayer wiring board was drilled to form a through hole with a diameter of 0.35 mm, and after performing pickling etc. as in the conventional case, through hole plating treatment (no electrolytic copper plating/panel plating)
20μ on the inner wall surface of the through hole and the surface of the multilayer wiring board.
Form a copper plating layer of m thick, and then perform conventional treatments such as water washing and pickling, as well as conventional photoresist layer formation treatment, 20 μm electrolytic copper plating treatment, etching treatment, solder resist layer formation treatment, etc. Through this process, a multilayer wiring board was manufactured.
【００２９】この様にして求められた多層配線板のハロ
ーイング発生量について測定したところ、図２に示すよ
うにピンクリングの幅Ｌの値は約８０μｍで従来法に較
べて極めて低減され、従って、本発明を適用したことに
より配線層と接着性絶縁層との接着強度が強固でかつ配
線層と接着性絶縁層との界面に適宜処理剤が残留し難い
多層配線板が求められることが確認できた。When the amount of haloing generated in the multilayer wiring board obtained in this way was measured, as shown in FIG. 2, the value of the width L of the pink ring was about 80 μm, which was extremely reduced compared to the conventional method. By applying the present invention, it was confirmed that there is a need for a multilayer wiring board in which the adhesive strength between the wiring layer and the adhesive insulating layer is strong and the appropriate treatment agent does not easily remain at the interface between the wiring layer and the adhesive insulating layer. did it.
【００３０】［実施例２］以下に示す条件で酸化処理を
行った以外は実施例１と略同一である。[Example 2] This was substantially the same as Example 1 except that the oxidation treatment was carried out under the conditions shown below.
【００３１】
酸化処理液の組成：Ｎａ３ ＰＯ４ ・１２Ｈ
２ Ｏ １７ｇ／ｌ
ＮａＯＨ
３１ｇ／ｌ
ＮａＣｌＯ２
４３ｇ／ｌ 処理
液温度：８０℃ 処理時間：４
分尚、上記酸化膜２の膜厚はオージェ分光分析により０
．６μｍであることがまたＣｕ２ Ｏ／ＣｕＯの比率は
薄膜用Ｘ線回析装置により１４０％であることが確認さ
れた。Composition of oxidation treatment liquid: Na3 PO4 ・12H
2 O 17g/l
NaOH
31g/l
NaClO2
43g/l Treatment liquid temperature: 80℃ Treatment time: 4
Furthermore, the film thickness of the oxide film 2 was determined to be 0 by Auger spectroscopy.
．． It was confirmed that the thickness was 6 μm, and the Cu2O/CuO ratio was 140% using a thin film X-ray diffraction apparatus.
【００３２】そして、この様にして求められた多層配線
板のハローイング発生量について測定したところ、ピン
クリングの幅Ｌの値は約７０μｍ以下であり従来法に較
べて極めて低減され、かつ、実施例１よりも良好である
ことが確認できた。When the amount of haloing generated in the multilayer wiring board obtained in this way was measured, the value of the width L of the pink ring was approximately 70 μm or less, which was extremely reduced compared to the conventional method. It was confirmed that this was better than Example 1.
【００３３】［実施例３］以下の条件で酸化処理を２段
階で行った以外は実施例１と略同一である。[Example 3] This was substantially the same as Example 1 except that the oxidation treatment was performed in two stages under the following conditions.
【００３４】
（第一段階）
酸化処理液の組成：Ｎａ３ ＰＯ４ ・１２Ｈ
２ Ｏ １７ｇ／ｌ
ＮａＯＨ
２１ｇ／ｌ
ＮａＣｌＯ２
４３ｇ／ｌ 処理
液温度：９０℃ 処理時間：４
分３０秒上記条件で酸化処理を施し図３（Ａ）に示すよ
うに配線層１の表面にＣｕ２ＯとＣｕＯから成る厚さ１
．０μｍの酸化膜２を形成しかつ水洗した。(First stage) Composition of oxidation treatment solution: Na3 PO4 ・12H
2 O 17g/l
NaOH
21g/l
NaClO2
43g/l Processing liquid temperature: 90°C Processing time: 4
After performing oxidation treatment under the above conditions for 30 seconds, the surface of the wiring layer 1 is coated with a thickness 1 consisting of Cu2O and CuO, as shown in FIG. 3(A).
．． An oxide film 2 of 0 μm was formed and washed with water.
【００３５】次に、この酸化処理された内層用回路板を
１０％のＨ２ ＳＯ４ 水溶液に２０〜３０秒間浸漬し
、図３（Ｂ）に示すように上記酸化膜２の厚さが０．２
μｍになるまでエッチング処理し、かつ、水洗した。Next, this oxidized inner layer circuit board is immersed in a 10% H2 SO4 aqueous solution for 20 to 30 seconds, and as shown in FIG. 3(B), the thickness of the oxide film 2 is 0.2
It was etched to a thickness of μm and washed with water.
【００３６】次いで、以下に示す条件で第二段階の酸化
処理を施し、図３（Ｃ）に示すような酸化膜２０を形成
しかつ水洗した。Next, a second stage oxidation treatment was performed under the conditions shown below to form an oxide film 20 as shown in FIG. 3(C), and the film was washed with water.
【００３７】
（第二段階）
酸化処理液の組成：Ｎａ３ ＰＯ４ ・１２Ｈ
２ Ｏ １７ｇ／ｌ
ＮａＯＨ
３１ｇ／ｌ
ＮａＣｌＯ２
４３ｇ／ｌ 処理
液温度：８０℃ 処理時間：４
分尚、上記酸化膜２０の膜厚はオージェ分光分析により
０．６μｍであることがまたＣｕ２ Ｏ／ＣｕＯの比率
は薄膜用Ｘ線回析装置により１５０％であることが確認
された。(Second stage) Composition of oxidation treatment solution: Na3 PO4 ・12H
2 O 17g/l
NaOH
31g/l
NaClO2
43g/l Treatment liquid temperature: 80℃ Treatment time: 4
Furthermore, it was confirmed that the thickness of the oxide film 20 was 0.6 μm by Auger spectroscopy, and that the Cu2O/CuO ratio was 150% by an X-ray diffraction apparatus for thin films.
【００３８】そして、この様にして求められた多層配線
板のハローイング発生量について測定したところ、ピン
クリングの幅Ｌの値は約６０μｍ以下であり実施例２と
同様に良好であることが確認できた。When the amount of haloing generated in the multilayer wiring board thus obtained was measured, it was confirmed that the value of the width L of the pink ring was about 60 μm or less, which was as good as in Example 2. did it.
【００３９】［比較例］以下に示す条件で酸化処理を行
った以外は実施例１と略同一である。[Comparative Example] This was substantially the same as Example 1 except that the oxidation treatment was carried out under the conditions shown below.
【００４０】
酸化処理液の組成：Ｎａ３ ＰＯ４ ・１２Ｈ
２ Ｏ １７ｇ／ｌ
ＮａＯＨ
２１ｇ／ｌ
ＮａＣｌＯ２
４３ｇ／ｌ 処理
液温度：９５℃ 処理時間：４
分３０秒尚、上記酸化膜２の膜厚はオージェ分光分析に
より１．０μｍであることがまたＣｕ２ Ｏ／ＣｕＯの
比率は薄膜用Ｘ線回析装置により３３％であることが確
認された。Composition of oxidation treatment liquid: Na3 PO4 ・12H
2 O 17g/l
NaOH
21g/l
NaClO2
43g/l Treatment liquid temperature: 95℃ Treatment time: 4
30 seconds It was confirmed that the thickness of the oxide film 2 was 1.0 μm by Auger spectroscopy, and the Cu2O/CuO ratio was 33% by an X-ray diffraction apparatus for thin films.
【００４１】そして、この比較例に係る多層配線板のハ
ローイング発生量について測定したところ、ピンクリン
グの幅Ｌの値は約１４０μｍであり上記実施例１〜３の
多層配線板と較べ極めて劣っていることが確認できた。When the amount of haloing generated in the multilayer wiring board according to this comparative example was measured, the value of the width L of the pink ring was about 140 μm, which was extremely inferior to the multilayer wiring boards of Examples 1 to 3. I was able to confirm that there was.
【００４２】[0042]
【発明の効果】請求項１及び３に係る発明によれば、耐
酸性の大きいＣｕ２Ｏの割合が増大する分その酸化膜の
耐酸性が向上するため、多層配線板の製造工程途上にお
いて適宜酸処理を施しても配線層の酸化膜が溶解され難
くなり配線層の金属銅が部分的に露出するハローイング
現象を抑制することが可能になる。According to the invention according to claims 1 and 3, the acid resistance of the oxide film is improved as the proportion of Cu2O, which has high acid resistance, increases, so that acid treatment can be performed as appropriate during the manufacturing process of the multilayer wiring board. Even if it is applied, the oxide film of the wiring layer is difficult to dissolve, making it possible to suppress the haloing phenomenon in which the metal copper of the wiring layer is partially exposed.
【００４３】他方、請求項２及び４に係る発明によれば
、酸化膜の耐酸性が向上ししかも酸化膜の膜厚も薄くサ
イドエッチが起り難いため、多層配線板の製造工程途上
において適宜酸処理を施しても上記配線層の酸化膜が更
に溶解され難くなり配線層の金属銅が部分的に露出する
ハローイング現象をより確実に抑制することが可能にな
る。On the other hand, according to the inventions according to claims 2 and 4, the acid resistance of the oxide film is improved and the thickness of the oxide film is also thin so that side etching is difficult to occur. Even if the treatment is performed, the oxide film of the wiring layer becomes more difficult to dissolve, and it becomes possible to more reliably suppress the haloing phenomenon in which the metal copper of the wiring layer is partially exposed.
【００４４】従って、上記配線層と接着性絶縁層との接
着不良が防止できると共に配線層と接着性絶縁層との界
面に上記酸処理剤等が残留し難くなるため多層配線板と
しての信頼性を著しく向上できる効果を有している。Therefore, poor adhesion between the wiring layer and the adhesive insulating layer can be prevented, and the acid treatment agent and the like are less likely to remain at the interface between the wiring layer and the adhesive insulating layer, improving reliability as a multilayer wiring board. It has the effect of significantly improving the
【図１】実施例に係る内層用回路板の一部拡大断面図。FIG. 1 is a partially enlarged sectional view of an inner layer circuit board according to an embodiment.
【図２】実施例に係る多層配線板の一部拡大斜視図。FIG. 2 is a partially enlarged perspective view of the multilayer wiring board according to the example.
【図３】図３（Ａ）〜（Ｃ）は２回の酸化処理により酸
化膜を形成する工程説明図。FIGS. 3(A) to 3(C) are process explanatory diagrams of forming an oxide film through two oxidation treatments.
【図４】従来の多層配線板の製造工程途上の斜視図。FIG. 4 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図５】従来の多層配線板の製造工程途上の斜視図。FIG. 5 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図６】従来の多層配線板の製造工程途上の斜視図。FIG. 6 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図７】従来の多層配線板の製造工程途上の斜視図。FIG. 7 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図８】従来の多層配線板の製造工程途上の斜視図。FIG. 8 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図９】従来の多層配線板の製造工程途上の斜視図。FIG. 9 is a perspective view of a conventional multilayer wiring board in the middle of a manufacturing process.
【図１０】製造された従来の多層配線板の概略斜視図。FIG. 10 is a schematic perspective view of a manufactured conventional multilayer wiring board.
【図１１】図１１（Ａ）〜（Ｂ）は従来の配線層表面を
酸化処理する工程説明図。FIGS. 11A and 11B are explanatory diagrams of a conventional process of oxidizing the surface of a wiring layer.
【図１２】図１２（Ａ）〜（Ｂ）はスルーホール形成後
における従来の多層配線板の一部拡大断面図。12A and 12B are partially enlarged sectional views of a conventional multilayer wiring board after forming through holes.
【図１３】スルーホール形成後における従来の多層配線
板の一部拡大斜視図。FIG. 13 is a partially enlarged perspective view of a conventional multilayer wiring board after forming through holes.
【図１４】図１３のＷ−Ｗ面の部分断面図。FIG. 14 is a partial sectional view taken along the line W-W in FIG. 13;
１ 配線層 ２ 酸化膜 1. Wiring layer 2 Oxide film
Claims (4)
形成された銅箔製の配線層を有する内層用回路板が接着
性絶縁層を介し複数積層されて成る多層配線板において
、上記酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８
０％以上に設定されていることを特徴とする多層配線板
。1. A multilayer wiring board in which a plurality of inner layer circuit boards each having a wiring layer made of copper foil with an oxide film of CuO and Cu2O formed on the surface thereof are laminated with an adhesive insulating layer interposed therebetween, wherein the oxide film is The ratio of Cu2O/CuO inside is 8
A multilayer wiring board characterized in that the wiring board is set to 0% or more.
形成された銅箔製の配線層を有する内層用回路板が接着
性絶縁層を介し複数積層されて成る多層配線板において
、上記酸化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８
０％以上でその酸化膜の膜厚が０．４μｍ〜０．８μｍ
に設定されていることを特徴とする多層配線板。2. A multilayer wiring board comprising a plurality of inner layer circuit boards laminated with an adhesive insulating layer interposed therebetween, each having a wiring layer made of copper foil on the surface of which an oxide film of CuO and Cu2O is formed. The ratio of Cu2O/CuO inside is 8
If it is 0% or more, the thickness of the oxide film is 0.4 μm to 0.8 μm.
A multilayer wiring board characterized by being set to.
内層用回路板の上記配線層を酸化処理してその表面にＣ
ｕＯとＣｕ２ Ｏからなる酸化膜を形成し、かつ、酸化
処理されたこれ等複数枚の内層用回路板を接着性絶縁層
を介し積層して多層配線板を製造する方法において、酸
化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８０％以上
となる条件で上記酸化処理を施すことを特徴とする多層
配線板の製造方法。3. The wiring layer of the inner layer circuit board having the wiring layer formed of copper foil is oxidized and the surface thereof is coated with carbon.
In a method of manufacturing a multilayer wiring board by forming an oxide film consisting of uO and Cu2O and laminating a plurality of these oxidized inner layer circuit boards via an adhesive insulating layer, A method for manufacturing a multilayer wiring board, characterized in that the oxidation treatment is performed under conditions such that the ratio of Cu2O/CuO is 80% or more.
内層用回路板の上記配線層を酸化処理してその表面にＣ
ｕＯとＣｕ２ Ｏからなる酸化膜を形成し、かつ、酸化
処理されたこれ等複数枚の内層用回路板を接着性絶縁層
を介し積層して多層配線板を製造する方法において、酸
化膜中におけるＣｕ２ Ｏ／ＣｕＯの比率が８０％以上
でその酸化膜の膜厚が０．４μｍ〜０．８μｍとなる条
件で上記酸化処理を施すことを特徴とする多層配線板の
製造方法。4. The wiring layer of the inner layer circuit board having the wiring layer formed of copper foil is oxidized and the surface thereof is coated with carbon.
In a method of manufacturing a multilayer wiring board by forming an oxide film consisting of uO and Cu2O and laminating a plurality of these oxidized inner layer circuit boards via an adhesive insulating layer, A method for manufacturing a multilayer wiring board, characterized in that the oxidation treatment is performed under conditions such that the ratio of Cu2O/CuO is 80% or more and the thickness of the oxide film is 0.4 μm to 0.8 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10301991A JP3123109B2 (en) | 1991-05-09 | 1991-05-09 | Multilayer wiring board and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10301991A JP3123109B2 (en) | 1991-05-09 | 1991-05-09 | Multilayer wiring board and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04334093A true JPH04334093A (en) | 1992-11-20 |
| JP3123109B2 JP3123109B2 (en) | 2001-01-09 |
Family
ID=14342940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10301991A Expired - Fee Related JP3123109B2 (en) | 1991-05-09 | 1991-05-09 | Multilayer wiring board and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3123109B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011079330A (en) * | 2007-12-14 | 2011-04-21 | Denso Corp | Resin-metal bonded article and method for producing the same |
| JPWO2015040998A1 (en) * | 2013-09-20 | 2017-03-02 | 三井金属鉱業株式会社 | Copper foil, copper foil with carrier foil and copper clad laminate |
| CN112204171A (en) * | 2018-06-20 | 2021-01-08 | 纳美仕有限公司 | Roughened copper foil, copper-clad laminate, and printed wiring board |
-
1991
- 1991-05-09 JP JP10301991A patent/JP3123109B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011079330A (en) * | 2007-12-14 | 2011-04-21 | Denso Corp | Resin-metal bonded article and method for producing the same |
| JP4883425B2 (en) * | 2007-12-14 | 2012-02-22 | 株式会社デンソー | Resin metal bonded product and manufacturing method thereof |
| US8394503B2 (en) | 2007-12-14 | 2013-03-12 | Toadenka Corporation | Resin-metal bonded article and method for producing the same |
| JPWO2015040998A1 (en) * | 2013-09-20 | 2017-03-02 | 三井金属鉱業株式会社 | Copper foil, copper foil with carrier foil and copper clad laminate |
| CN112204171A (en) * | 2018-06-20 | 2021-01-08 | 纳美仕有限公司 | Roughened copper foil, copper-clad laminate, and printed wiring board |
| CN112204171B (en) * | 2018-06-20 | 2023-09-29 | 纳美仕有限公司 | Coarsening copper foil, copper-clad laminate and printed circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3123109B2 (en) | 2001-01-09 |
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