JPH04331008A - Manufacture of diamond-coated tool - Google Patents
Manufacture of diamond-coated toolInfo
- Publication number
- JPH04331008A JPH04331008A JP13178691A JP13178691A JPH04331008A JP H04331008 A JPH04331008 A JP H04331008A JP 13178691 A JP13178691 A JP 13178691A JP 13178691 A JP13178691 A JP 13178691A JP H04331008 A JPH04331008 A JP H04331008A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- film
- base body
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 73
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 11
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000003786 synthesis reaction Methods 0.000 claims description 13
- 238000005255 carburizing Methods 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 238000001308 synthesis method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 14
- 238000005520 cutting process Methods 0.000 abstract description 13
- 239000012790 adhesive layer Substances 0.000 abstract description 7
- 239000007769 metal material Substances 0.000 abstract description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005299 abrasion Methods 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 16
- 239000012808 vapor phase Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 150000004820 halides Chemical class 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910015221 MoCl5 Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- -1 TiN Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910015255 MoF6 Inorganic materials 0.000 description 1
- 229910019804 NbCl5 Inorganic materials 0.000 description 1
- 229910019787 NbF5 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004546 TaF5 Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910010342 TiF4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910003091 WCl6 Inorganic materials 0.000 description 1
- 229910009035 WF6 Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035936 sexual power Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はダイヤモンド被覆工具の
製造方法の改良に関するものである。さらに詳しくいえ
ば、本発明は、例えば切削工具や耐摩耗性工具などに好
適に用いられる、基体表面に膜状ダイヤモンドを極めて
接着性良く形成させて成る寿命の長いダイヤモンド被覆
工具に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in the method of manufacturing diamond-coated tools. More specifically, the present invention relates to a diamond-coated tool with a long life, which is suitably used, for example, as a cutting tool or a wear-resistant tool, and has a diamond film formed on the surface of a substrate with extremely good adhesion.
【０００２】0002
【従来の技術】従来、ダイヤモンドは極めて硬く、高耐
摩耗性を有することから、工業用として、非鉄材料や非
金属材料の切削加工工具、あるいは高耐摩耗性が要求さ
れる耐摩耗工具や、耐摩耗部材などに利用されている。
これらのダイヤモンド工具や耐摩耗部材に用いられるダ
イヤモンド素材としては、例えば天然又は合成単結晶ダ
イヤモンド、焼結体多結晶ダイヤモンドなどを挙げるこ
とができる。さらに、近年気相合成法による膜状ダイヤ
モンドの合成技術が著しい発展を遂げ、この気相合成法
により、基体表面に膜状ダイヤモンドを形成させ、これ
を種々のダイヤモンド工具や耐摩耗部材に利用すること
が試みられている。この気相合成法としては、例えば、
炭素源を含む原料ガスを用い、これをプラズマ分解する
か、又は不均等化反応を利用して、膜状ダイヤモンドを
基体表面に析出させる化学蒸着法（ＣＶＤ法）、熱陰極
ＰＩＧガン、冷陰極ＰＩＧガン、スパッターガンなどを
用いて膜状ダイヤモンドを基体表面に形成させるイオン
化蒸着法などが知られている。特に、ＣＶＤ法により、
膜状ダイヤモンドを基体表面に析出させる方法は、あま
り高温を必要とせず、かつ連続操業が容易であって工業
的に有利であることから、最近注目を浴びている。しか
しながら、このような気相合成法により基体表面に形成
された膜状ダイヤモンドは、該基体との接着が十分でな
いために、使用中に膜状ダイヤモンドが基体から剥離し
やすいという欠点を有している。したがって、気相合成
法により基体表面に膜状ダイヤモンドを形成させ、この
ものをダイヤモンド工具に利用するためには、該膜状ダ
イヤモンドと基体とが強く接着していることが必要であ
り、その開発が強く望まれていた。[Prior Art] Conventionally, diamond is extremely hard and has high wear resistance, so it has been used for industrial purposes, such as cutting tools for non-ferrous and non-metallic materials, and wear-resistant tools that require high wear resistance. Used for wear-resistant parts, etc. Examples of diamond materials used for these diamond tools and wear-resistant members include natural or synthetic single crystal diamond, and sintered polycrystalline diamond. Furthermore, in recent years, the technology for synthesizing film-like diamonds using vapor phase synthesis has made remarkable progress, and by using this vapor-phase synthesis method, film-like diamonds are formed on the surface of the substrate, which can then be used in various diamond tools and wear-resistant parts. That is what is being attempted. This vapor phase synthesis method includes, for example,
Chemical vapor deposition (CVD), hot cathode PIG gun, cold cathode, which uses a raw material gas containing a carbon source and decomposes it with plasma or utilizes a disproportionation reaction to deposit film-like diamond on the surface of the substrate. Ionization vapor deposition methods are known in which a diamond film is formed on the surface of a substrate using a PIG gun, a sputter gun, or the like. In particular, by CVD method,
The method of depositing diamond film on the surface of a substrate has recently attracted attention because it does not require very high temperatures and is easy to operate continuously, which is industrially advantageous. However, the diamond film formed on the surface of a substrate by such a vapor phase synthesis method has the disadvantage that it easily peels off from the substrate during use because the adhesion to the substrate is insufficient. There is. Therefore, in order to form a diamond film on the surface of a substrate by vapor phase synthesis and use it as a diamond tool, it is necessary that the diamond film and the substrate have strong adhesion. was strongly desired.
【０００３】0003
【発明が解決しようとする課題】本発明は、このような
事情のもとで、基体表面に膜状ダイヤモンドを極めて接
着性よく形成させて成るダイヤモンド被覆工具を効率よ
く製造する方法を提供することを目的としてなされたも
のである。[Problems to be Solved by the Invention] Under these circumstances, an object of the present invention is to provide a method for efficiently manufacturing a diamond-coated tool in which a film-like diamond is formed on the surface of a substrate with extremely good adhesion. It was made for the purpose of
【０００４】0004
【課題を解決するための手段】本発明者らは前記目的を
達成するために鋭意研究を重ねた結果、あらかじめ浸炭
処理を施した基体表面に、膜状ダイヤモンドに対して高
い接着性を有する特定の材料から成る層を設け、次いで
その上に膜状ダイヤモンドを形成させることにより、そ
の目的を達成しうることを見い出し、この知見に基づい
て本発明を完成するに至った。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present inventors have conducted extensive research, and as a result, the present inventors have developed a material that has high adhesion to diamond film on the surface of a substrate that has been previously carburized. The inventors have discovered that the object can be achieved by providing a layer made of this material and then forming a diamond film thereon, and have completed the present invention based on this knowledge.
【０００５】すなわち、本発明は、基体表面に浸炭処理
を施したのち、膜状ダイヤモンドに対して高い接着性を
有する金属化合物材料から成る層を化学気相合成法によ
り設け、次いでその上に膜状ダイヤモンドを気相合成法
により形成させることを特徴とするダイヤモンド被覆工
具の製造方法を提供するものである。That is, in the present invention, after carburizing the surface of the substrate, a layer made of a metal compound material having high adhesion to diamond film is provided by chemical vapor synthesis, and then a film is formed on the layer. The present invention provides a method for manufacturing a diamond-coated tool, characterized in that diamond-shaped diamond is formed by a vapor phase synthesis method.
【０００６】以下、本発明を詳細に説明する。本発明方
法において用いられる基体の材質については特に制限は
なく、従来ダイヤモンド被覆工具における基体に慣用さ
れているもの、例えばケイ素、モリブデン、タンタル、
タングステン、チタンなどの金属や、これらの金属の合
金、炭化物、窒化物、酸化物、あるいはＴｉＣ−Ｎｉ系
、ＴｉＣ−Ｃｏ系、Ａｌ２Ｏ３−Ｆｅ系などのサーメッ
トなどの中から任意のものを選択して用いることができ
るが、これらの中で特に炭化タングステンなどの超硬合
金基体が好ましく用いられる。The present invention will be explained in detail below. There are no particular restrictions on the material of the substrate used in the method of the present invention, and materials commonly used for substrates in conventional diamond-coated tools, such as silicon, molybdenum, tantalum,
Select any metal from among metals such as tungsten and titanium, alloys of these metals, carbides, nitrides, oxides, and cermets such as TiC-Ni, TiC-Co, and Al2O3-Fe. Among these, cemented carbide substrates such as tungsten carbide are particularly preferably used.
【０００７】本発明方法においては、これらの材料から
成る基体の表面に、まず浸炭処理を施したのち、膜状ダ
イヤモンドに対して接着性を有する材料から成る層を化
学気相合成法により設けることが必要である。本発明方
法に用いる該浸炭処理は、例えば、熱ＣＶＤ装置に、基
体を入れて、メタンと水素を導入して、０．５〜３時間
、９００℃〜１２００℃の基体温度で処理するといった
方法により行うことができる。[0007] In the method of the present invention, the surface of the substrate made of these materials is first carburized, and then a layer made of a material that is adhesive to the diamond film is provided by chemical vapor synthesis. is necessary. The carburizing treatment used in the method of the present invention is carried out, for example, by placing the substrate in a thermal CVD apparatus, introducing methane and hydrogen, and treating the substrate at a temperature of 900°C to 1200°C for 0.5 to 3 hours. This can be done by
【０００８】この浸炭処理された基体表面に設けられる
膜状ダイヤモンドに対して接着性を有する材料としては
、化学的気相合成法を適用して製膜できる材料であって
ダイヤモンド膜と親和性のある金属であればとくに制限
なく使用することができ、例えば、Ｗ、Ｍｏ、Ｓｉ、Ｔ
ａ、Ｎｂ、ＴｉＮ及びＴｉＣの中から選ばれた少なくと
も１種から成る層を好適に使用することができる。前記
の浸炭処理を施さずに、基体表面に該接着性材料層を設
けた場合、本発明の効果が十分に発揮されず、基体表面
に膜状ダイヤモンドが強固に接着したダイヤモンド被覆
工具が得られにくい。[0008] The material that has adhesive properties to the diamond film provided on the surface of the carburized substrate is a material that can be formed into a film by applying a chemical vapor phase synthesis method and that has an affinity with the diamond film. Certain metals can be used without particular restrictions; for example, W, Mo, Si, T.
A layer consisting of at least one selected from a, Nb, TiN, and TiC can be suitably used. If the adhesive material layer is provided on the surface of the substrate without carrying out the carburizing treatment, the effects of the present invention will not be fully exhibited, and a diamond-coated tool in which the diamond film will be firmly adhered to the surface of the substrate will not be obtained. Hateful.
【０００９】浸炭処理を施すことにより、膜状ダイヤモ
ンドが基体に強固に接着する理由については、必ずしも
明確ではないが、次のことが考えられる。すなわち、接
着性材料層として、例えばＷ、Ｍｏ、Ｓｉ、Ｔａ、Ｎｂ
、ＴｉＮなどの金属や窒化物から成る層を化学気相合成
法で設けた場合、これらと浸炭処理により沈着した炭素
微粒子とが一部反応して炭化物を形成し、その結果この
接着剤層を介して膜状ダイヤモンドと基体とが強固に接
着するものと思われる。また、接着性材料層としてＴｉ
Ｃなどの炭化物から成る層を化学気相合成法で設けた場
合、膜状ダイヤモンドを気相合成法で形成させる際に、
通常該ＴｉＣ中の炭素がとられて一部Ｔｉの金属となる
が、浸炭処理することにより、沈着した炭素微粒子によ
ってこのような好ましくない事態が防止され、その結果
膜状ダイヤモンドと基体との接着性の低下が抑制される
ものと思われる。[0009] The reason why the film-like diamond adheres firmly to the substrate by carburizing is not necessarily clear, but the following is thought to be the reason. That is, as the adhesive material layer, for example, W, Mo, Si, Ta, Nb
When a layer made of a metal such as TiN or a nitride is formed by chemical vapor synthesis, a portion of these and the carbon particles deposited by carburization react to form carbide, and as a result, this adhesive layer It is thought that the diamond film and the substrate are firmly bonded to each other through the bond. In addition, Ti is used as the adhesive material layer.
When a layer consisting of a carbide such as C is formed by chemical vapor synthesis, when a film-like diamond is formed by vapor phase synthesis,
Normally, the carbon in the TiC is removed and some of it becomes Ti metal, but by carburizing, this undesirable situation is prevented by the deposited carbon particles, and as a result, the adhesion between the diamond film and the substrate is improved. It is thought that the decline in sexual performance is suppressed.
【００１０】前記接着剤層を浸炭処理された基体表面に
設ける方法としては、該接着剤層として例えばＷ、Ｍｏ
、Ｓｉ、Ｔａ、Ｎｂなどの全層から成る層を設ける場合
には、これらの塩化物やフッ化物などのハロゲン化物を
気化し、化学気相合成法により金属を析出させる方法な
どが用いられる。該ハロゲン化物としては、例えばＷＣ
ｌ６、ＷＦ６、ＭｏＣｌ５、ＭｏＦ６、ＳｉＣｌ４、Ｓ
ｉＦ４、ＴａＣｌ６、ＴａＦ５、ＮｂＣｌ５、ＮｂＦ５
などが挙げられる。また、ＴｉＣなどの炭化物から成る
層を設ける場合には、Ｔｉなどの有機ハロゲン化物を気
化し、化学気相合成法により炭化物を析出させる方法な
どが用いられる。該有機ハロゲン化物としては、例えば
ＴｉＣＨ３Ｃｌ４などが挙げられる。[0010] As a method for providing the adhesive layer on the surface of the carburized substrate, the adhesive layer may be made of, for example, W, Mo, etc.
, Si, Ta, Nb, etc., a method is used in which halides such as chlorides and fluorides are vaporized and metals are deposited by chemical vapor phase synthesis. As the halide, for example, WC
l6, WF6, MoCl5, MoF6, SiCl4, S
iF4, TaCl6, TaF5, NbCl5, NbF5
Examples include. Further, in the case of providing a layer made of a carbide such as TiC, a method is used in which an organic halide such as Ti is vaporized and the carbide is precipitated by chemical vapor phase synthesis. Examples of the organic halide include TiCH3Cl4.
【００１１】一方、ＴｉＮなど窒化物から成る層を設け
る場合には、Ｔｉなどのハロゲン化物を気化し、窒素雰
囲気下で化学気相合成法により窒化物を析出させる方法
などが用いられる。該ハロゲン化物としては、例えば、
ＴｉＣｌ４、ＴｉＦ４などが挙げられる。このようにし
て、浸炭処理された基体表面に設けられる接着剤層の厚
さは、通常１〜１００μｍの範囲で選ばれる。On the other hand, when providing a layer made of a nitride such as TiN, a method is used in which a halide such as Ti is vaporized and the nitride is precipitated by chemical vapor phase synthesis in a nitrogen atmosphere. Examples of the halides include:
Examples include TiCl4 and TiF4. The thickness of the adhesive layer provided on the surface of the carburized substrate in this way is usually selected in the range of 1 to 100 μm.
【００１２】本発明方法においては、前記接着剤層が設
けられた基体表面に、気相合成法により膜状ダイヤモン
ドを形成させるが、所望に応じ、成膜速度を速めるため
に、あらかじめ該接着剤層が設けられた基体表面に高硬
度粉末による摩擦処理や衝突処理を施して、鋭利な表面
傷を設けたのち、該膜状ダイヤモンドを形成させてもよ
い。該気相合成法については特に制限はなく、従来膜状
ダイヤモンドの形成に慣用されている方法、例えば種々
の化学蒸着法（ＣＶＤ法）やイオン化蒸着法などの物理
蒸着法の中から任意の方法を選んで用いることができる
が、ＣＶＤ法が好適である。In the method of the present invention, a diamond film is formed on the surface of the substrate provided with the adhesive layer by vapor phase synthesis. The film-like diamond may be formed after the surface of the substrate on which the layer is provided is subjected to friction treatment or collision treatment using high-hardness powder to provide sharp surface scratches. There are no particular restrictions on the vapor phase synthesis method, and any method may be used from among the methods conventionally used for forming diamond film, for example, physical vapor deposition methods such as various chemical vapor deposition methods (CVD methods) and ionization vapor deposition methods. Although the method can be selected and used, the CVD method is preferred.
【００１３】このＣＶＤ法には、原料ガスを活性化状態
に導く手段によって、例えば（１）原料ガスを赤熱した
フィラメントの近傍を通過させることによって活性化状
態に導く熱分解ＣＶＤ法、（２）原料ガスの導入部に高
周波を印加し、高周波によってプラズマを形成させるこ
とによって、該原料ガスを活性化状態に導く高周波プラ
ズマＣＶＤ法、（３）前記高周波の代わりにマイクロ波
を用いるマイクロ波プラズマＣＶＤ法、（４）イオンビ
ームによって原料ガスを活性化状態に導くイオンビーム
ＣＶＤ法などがあり、本発明においてはいずれの方法も
用いることができる。[0013] This CVD method includes means for introducing the raw material gas into an activated state, such as (1) a pyrolysis CVD method in which the raw material gas is brought into an activated state by passing near a red-hot filament; (2) A high frequency plasma CVD method in which high frequency waves are applied to the introduction part of the raw material gas and plasma is formed by the high frequency waves to bring the raw material gas into an activated state; (3) microwave plasma CVD using microwaves instead of the high frequency waves; (4) an ion beam CVD method in which a raw material gas is brought into an activated state by an ion beam, and any of these methods can be used in the present invention.
【００１４】前記ＣＶＤ法において用いられる原料ガス
としては、炭素源ガスと水素との混合ガスが用いられる
。炭素源ガスについては特に制限はなく、通常ＣＶＤ法
によりダイヤモンドの形成に用いられているもの、例え
ば一酸化炭素や二酸化炭素、あるいはアルカン類、アル
ケン類、アルキン類、芳香族炭化水素類、シクロパラフ
ィン類、シクロオレフィン類、含酸素炭素化合物、含窒
素炭素化合物などの中から選ばれた１種又は２種以上の
混合物が用いられる。またこれらの原料ガスには、所望
に応じ窒素、アルゴン、ネオン、キセノンなどの不活性
ガスを含有させてもよい。[0014] As the raw material gas used in the CVD method, a mixed gas of a carbon source gas and hydrogen is used. There are no particular restrictions on the carbon source gas, and carbon source gases that are normally used to form diamonds by the CVD method, such as carbon monoxide, carbon dioxide, alkanes, alkenes, alkynes, aromatic hydrocarbons, and cycloparaffins, can be used. One type or a mixture of two or more types selected from the group consisting of cycloolefins, oxygen-containing carbon compounds, nitrogen-containing carbon compounds, etc. is used. Further, these raw material gases may contain an inert gas such as nitrogen, argon, neon, or xenon, if desired.
【００１５】このようにして形成された膜状ダイヤモン
ドの厚さは、使用目的によって異なるが、通常１〜１０
００μｍの範囲で選ばれる。本発明方法においては、前
記のようにして、あらかじめ浸炭処理された基体表面に
膜状ダイヤモンドに対して接着性を有する材料から成る
層を設けたのち、膜状ダイヤモンドを形成させることに
より、基体との接着性の高い膜状ダイヤモンドが形成さ
れたダイヤモンド被覆工具が得られる。The thickness of the diamond film thus formed varies depending on the purpose of use, but is usually 1 to 10 mm thick.
00 μm. In the method of the present invention, a layer made of a material that has adhesive properties to film-like diamond is provided on the surface of a substrate that has been carburized in advance as described above, and then film-like diamond is formed, thereby bonding the substrate. A diamond-coated tool on which a film-like diamond with high adhesiveness is formed can be obtained.
【００１６】このようにして得られた本発明のダイヤモ
ンド被覆工具は、膜状ダイヤモンドが基体表面に接着性
よく形成されたものであって、著しく硬く、高耐摩耗性
を有する上、使用中に膜状ダイヤモンドが基体から剥離
しにくいので、非鉄材料や非金属材料の切削加工工具や
耐摩耗工具などに好適に用いられる。The thus obtained diamond-coated tool of the present invention has film-like diamond formed on the surface of the substrate with good adhesion, is extremely hard, has high wear resistance, and is resistant to wear during use. Since film-like diamond is difficult to peel off from the substrate, it is suitable for use in cutting tools and wear-resistant tools for non-ferrous and non-metallic materials.
【００１７】[0017]
【実施例】次に、実施例により本発明をさらに詳細に説
明するが、本発明はこれらの例によってなんら限定され
るものではない。EXAMPLES Next, the present invention will be explained in more detail with reference to examples, but the present invention is not limited to these examples in any way.
【００１８】実施例１
基体として超硬合金製ＴＡＴを用い、まず、次のように
して浸炭処理を行った。すなわち、反応容器内に超硬合
金製ＴＡＴを挿入し、浸炭温度１０５０℃、Ｈ２ガス流
量１００ｃｃ／ｍｉｎ、ＣＨ４ガス流量１０ｃｃ／ｍｉ
ｎ、反応時間１ｈｒの条件にて浸炭処理した。次に、反
応容器を排気したのち、浸炭処理を施した基体温度を９
００℃に保持して、ＷＣｌ６蒸発温度２００℃、ＷＣｌ
６蒸発速度１０ｇ／ｈｒ、Ｈ２ガス流量９０ｃｃ／ｍｉ
ｎ、Ａｒガス流量１０ｃｃ／ｍｉｎ、反応時間６０ｍｉ
ｎｎの条件にてＣＶＤ法によりタングステンを気相成長
させた。Example 1 A TAT made of cemented carbide was used as a substrate, and carburization was first carried out as follows. That is, a cemented carbide TAT was inserted into the reaction vessel, and the carburizing temperature was 1050°C, the H2 gas flow rate was 100cc/min, and the CH4 gas flow rate was 10cc/min.
The carburizing treatment was carried out under the following conditions: n, reaction time 1 hr. Next, after evacuating the reaction vessel, the temperature of the carburized substrate was increased to 9.
00°C, WCl6 evaporation temperature 200°C, WCl
6 Evaporation rate 10g/hr, H2 gas flow rate 90cc/mi
n, Ar gas flow rate 10cc/min, reaction time 60mi
Tungsten was grown in vapor phase by CVD under conditions of nn.
【００１９】上記の方法により作成したタングステン被
覆基体を用いて該基体表面にマイクロ波プラズマＣＶＤ
法により膜状ダイヤモンドを形成しダイヤモンド被覆Ｔ
ＡＴを作製した。このような処理を施したダイヤモンド
被覆ＴＡＴを切削速度３４０ｍ／ｍｉｎ、送り０．１５
ｍｍ／ｒｅｖ、切り込み０．１５ｍｍの切削条件で８％
Ｓｉを含むＡｌ合金（ＡＣ４Ａ）の乾式切削に用いた結
果、１００分間の連続切削が可能で、その逃げ面摩耗は
、２０μｍであり、超硬合金製ＴＡＴの１／１０の逃げ
面摩耗だった。Using the tungsten-coated substrate prepared by the above method, the surface of the substrate was subjected to microwave plasma CVD.
A film-like diamond is formed by the diamond coating method.
AT was produced. The diamond-coated TAT treated in this way was cut at a cutting speed of 340 m/min and a feed rate of 0.15.
mm/rev, 8% under cutting conditions of 0.15 mm depth of cut
When used for dry cutting of an Al alloy (AC4A) containing Si, it was possible to continuously cut for 100 minutes, and the flank wear was 20 μm, which was 1/10 of that of TAT made of cemented carbide. .
【００２０】実施例２
超硬合金製ＴＡＴ基体を実施例１と同様にして浸炭処理
した。次いで、反応容器を排気したのち、浸炭処理を施
した基体温度７００℃、ＭｏＣｌ５蒸発温度２００℃、
ＭｏＣｌ５蒸発速度１０ｇ／ｈｒ、Ｈ２流量８０ｃｃ／
ｍｉｎ、Ａｒ流量２０ｃｃ／ｍｉｎ、反応時間１ｈｒの
条件にてＣＶＤ法によりモリブデンを気相成長させた。
上記方法により作製したモリブデン被覆基体を用いて該
基体表面に実施例１と同様に膜状ダイヤモンドを被覆し
、切削試験を行ったところ、１００分間の連続切削にお
いてその逃げ面摩耗は３０μｍであった。Example 2 A cemented carbide TAT substrate was carburized in the same manner as in Example 1. Next, after evacuating the reaction vessel, the temperature of the carburized substrate was 700°C, the MoCl5 evaporation temperature was 200°C,
MoCl5 evaporation rate 10g/hr, H2 flow rate 80cc/
Molybdenum was grown in a vapor phase by the CVD method under the following conditions: min, Ar flow rate of 20 cc/min, and reaction time of 1 hr. Using a molybdenum-coated substrate prepared by the above method, the surface of the substrate was coated with a diamond film in the same manner as in Example 1, and a cutting test was conducted. The flank wear was 30 μm during continuous cutting for 100 minutes. .
【００２１】実施例３
基体として超硬合金製プリント基板用ドリルを用いた以
外は、実施例１と同様にしてダイヤモンド被覆ドリルを
作製した。このダイヤモンド被覆ドリルを用い、ガラス
−エポキシ銅張積層板３枚重ね（１．６ｍｍＴ×３）を
回転数８０，０００ｒｐｍ、送り４．０ｍ／ｍｉｎの加
工条件で１０，０００ヒット加工した。その結果、ダイ
ヤモンド被覆ドリルの摩耗はほとんど見られず、さらに
２万ヒットの加工を行うことができ、通常の超硬合金製
プリント基板用ドリルの１０倍の寿命であった。Example 3 A diamond-coated drill was produced in the same manner as in Example 1, except that a cemented carbide printed circuit board drill was used as the base. Using this diamond-coated drill, three glass-epoxy copper-clad laminates (1.6 mm T x 3) were machined for 10,000 hits under the processing conditions of a rotation speed of 80,000 rpm and a feed rate of 4.0 m/min. As a result, the diamond-coated drill showed almost no wear and was able to process 20,000 hits, which was 10 times longer than a normal cemented carbide drill for printed circuit boards.
【００２２】比較例１
実施例１において、浸炭処理を行わなかったこと以外は
、実施例１と同様にしてダイヤモンド被覆ＴＡＴを作製
した。このものを用いて切削試験を行ったところ、１０
０分間の連続切削において、その逃げ面摩耗は１００μ
ｍであった。Comparative Example 1 A diamond-coated TAT was produced in the same manner as in Example 1, except that the carburizing treatment was not performed. When a cutting test was conducted using this material, 10
During continuous cutting for 0 minutes, the flank wear is 100μ
It was m.
【００２３】比較例２
実施例１において、浸炭処理及びタングステン被覆処理
を行わなかったこと以外は、実施例１と同様にしてダイ
ヤモンド被覆ＴＡＴを作製した。このものを用いて切削
試験を行ったところ、１００分間の連続切削において、
その逃げ面摩耗は２００μｍであった。Comparative Example 2 A diamond-coated TAT was produced in the same manner as in Example 1, except that the carburizing treatment and tungsten coating treatment were not performed. When a cutting test was conducted using this product, during continuous cutting for 100 minutes,
The flank wear was 200 μm.
【００２４】[0024]
【発明の効果】本発明によると、基体表面に浸炭処理を
施したのち、膜状ダイヤモンドに対して接着性を有する
金属材料から成る層を設け、次いでこの上に膜状ダイヤ
モンドを形成させることにより、該膜状ダイヤモンドと
基体との接着性が著しく向上した寿命の長いダイヤモン
ド被覆工具を得ることができる。[Effects of the Invention] According to the present invention, after carburizing the surface of the substrate, a layer made of a metal material having adhesive properties to the diamond film is provided, and then the diamond film is formed on this layer. , it is possible to obtain a diamond-coated tool with a long life and significantly improved adhesion between the diamond film and the substrate.
Claims (2)
イヤモンドに対して高い接着性を有する金属化合物材料
から成る層を化学気相合成法により設け、次いでその上
に膜状ダイヤモンドを気相合成法により形成させること
を特徴とするダイヤモンド被覆工具の製造方法。Claim 1: After carburizing the surface of the substrate, a layer made of a metal compound material having high adhesion to the diamond film is formed by chemical vapor synthesis, and then the diamond film is deposited on the layer by chemical vapor synthesis. A method for manufacturing a diamond-coated tool, characterized in that it is formed by a phase synthesis method.
する金属化合物材料が、Ｗ、Ｍｏ、Ｓｉ、Ｔａ、Ｎｂ、
ＴｉＮ及びＴｉＣの中から選ばれた少なくとも１種であ
る請求項１記載のダイヤモンド被覆工具の製造方法。2. The metal compound material having high adhesion to diamond film is W, Mo, Si, Ta, Nb,
The method for manufacturing a diamond-coated tool according to claim 1, wherein the diamond-coated tool is at least one selected from TiN and TiC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13178691A JPH04331008A (en) | 1991-05-07 | 1991-05-07 | Manufacture of diamond-coated tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13178691A JPH04331008A (en) | 1991-05-07 | 1991-05-07 | Manufacture of diamond-coated tool |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04331008A true JPH04331008A (en) | 1992-11-18 |
Family
ID=15066112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13178691A Pending JPH04331008A (en) | 1991-05-07 | 1991-05-07 | Manufacture of diamond-coated tool |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04331008A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007039720A (en) * | 2005-08-01 | 2007-02-15 | Permelec Electrode Ltd | Electroconductive diamond electrode and its producing method |
| CN102586869A (en) * | 2012-01-20 | 2012-07-18 | 中国科学院上海硅酸盐研究所 | Three-dimensional grapheme tube and preparation method thereof |
| CN104451595A (en) * | 2014-12-11 | 2015-03-25 | 重庆墨希科技有限公司 | Tooling system for transferring graphene membrane by chemical vapor deposition method |
-
1991
- 1991-05-07 JP JP13178691A patent/JPH04331008A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007039720A (en) * | 2005-08-01 | 2007-02-15 | Permelec Electrode Ltd | Electroconductive diamond electrode and its producing method |
| JP4673696B2 (en) * | 2005-08-01 | 2011-04-20 | ペルメレック電極株式会社 | Conductive diamond electrode and manufacturing method thereof |
| CN102586869A (en) * | 2012-01-20 | 2012-07-18 | 中国科学院上海硅酸盐研究所 | Three-dimensional grapheme tube and preparation method thereof |
| CN102586869B (en) * | 2012-01-20 | 2015-02-11 | 中国科学院上海硅酸盐研究所 | Three-dimensional grapheme tube and preparation method thereof |
| CN104451595A (en) * | 2014-12-11 | 2015-03-25 | 重庆墨希科技有限公司 | Tooling system for transferring graphene membrane by chemical vapor deposition method |
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