JPH04325687A - Line type plasma cvd device - Google Patents
Line type plasma cvd deviceInfo
- Publication number
- JPH04325687A JPH04325687A JP12499091A JP12499091A JPH04325687A JP H04325687 A JPH04325687 A JP H04325687A JP 12499091 A JP12499091 A JP 12499091A JP 12499091 A JP12499091 A JP 12499091A JP H04325687 A JPH04325687 A JP H04325687A
- Authority
- JP
- Japan
- Prior art keywords
- processing
- chamber
- mounting table
- processing substrate
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 abstract description 15
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ウエハーやガラス基板
等の処理基板を複数同時に処理することのできるライン
処理式プラズマＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a line processing type plasma CVD apparatus that can simultaneously process a plurality of processing substrates such as wafers and glass substrates.
【０００２】0002
【従来技術】ウエハーやガラス基板等の処理基板の表面
に薄膜を形成するＣＶＤ装置として、従来、減圧ＣＶＤ
装置やプラズマＣＶＤ装置が使用されている。この場合
、処理室内を数Ｔｏｒｒの減圧状態を維持しなければな
らないが、減圧を維持した状態での処理基板の連続的な
搬送が難しいことから、従来ではバッチ処理するように
していた。ところが、バッチ処理システムでは、処理基
板を処理室に搬入した後に、減圧、処理ガスの注入、処
理ガスの排除、昇圧を順に行わなければならず、処理サ
イクルに時間がかかり、生産効率が低いという問題があ
った。[Prior Art] As a CVD apparatus for forming a thin film on the surface of a processing substrate such as a wafer or a glass substrate, conventionally, low pressure CVD is used.
equipment and plasma CVD equipment are used. In this case, it is necessary to maintain a reduced pressure state of several Torr in the processing chamber, but since it is difficult to continuously transport the processed substrates while maintaining reduced pressure, conventionally batch processing has been performed. However, in batch processing systems, after the substrates are transported into the processing chamber, the pressure must be reduced, the processing gas injected, the processing gas removed, and the pressure increased in sequence, which results in a long processing cycle and low production efficiency. There was a problem.
【０００３】そこで従来、平板で形成したプラズマ電極
を垂直に配置し、処理基板を垂直姿勢に保持した状態で
連続搬送するように構成したプラズマＣＶＤ装置が提供
されている。[0003] Conventionally, therefore, a plasma CVD apparatus has been provided in which a plasma electrode formed of a flat plate is arranged vertically and a substrate to be processed is continuously conveyed while being held in a vertical position.
【０００４】0004
【発明が解決しようとする課題】ところが、この場合、
平板電極と処理基板との間に形成されるプラズマ空間内
での処理ガスに対流効果が生じ、垂直に保持されている
処理基板の下部と上部とで加熱ムラが生じたり、形成し
た薄膜に厚さムラが発生したりするという問題があった
。このため、従来の連続処理式プラズマＣＶＤ装置では
、上下方向で加熱量を制御したり、ガス供給量を制御し
たりしなければならず、その制御がめんどうであるとい
う問題があった。本発明はこのような点に着目してなさ
れたもので、複数の処理基板をライン処理方式で連続的
に処理することのできるプラズマＣＶＤ装置を提供する
ことを目的とする。[Problem to be solved by the invention] However, in this case,
A convection effect occurs in the processing gas in the plasma space formed between the flat plate electrode and the processing substrate, which may cause uneven heating between the lower and upper parts of the processing substrate that is held vertically, or cause the formed thin film to become thicker. There was a problem that unevenness occurred. For this reason, in the conventional continuous processing type plasma CVD apparatus, it is necessary to control the amount of heating and the amount of gas supply in the vertical direction, and there is a problem in that the control is troublesome. The present invention has been made with attention to such points, and an object of the present invention is to provide a plasma CVD apparatus that can continuously process a plurality of processing substrates in a line processing method.
【０００５】[0005]
【課題を解決するための手段】上述の目的を達成するた
めに、本発明は、処理基板載せ換え部、予備加熱室、処
理室、搬送室とを閉ループに配置し、処理室内の下部に
平板電極を配置するとともに、平板電極に対向させて処
理室の上部にクオーツウインドウを介して加熱ヒータを
配置し、平板電極と加熱ヒータとの間に処理基板載置台
の移動路を形成し、この移動路を水平姿勢で間欠移動す
る処理基板載置台に複数の段付孔を透設して処理基板保
持部を構成し、処理室内での処理基板載置台の停止位置
に対応させてシールド装置を配置し、このシールド装置
を処理室の上壁にクオーツウインドウを取り囲む状態で
配置したことを特徴としている。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention arranges a processing substrate reloading section, a preheating chamber, a processing chamber, and a transfer chamber in a closed loop, and provides a flat plate at the lower part of the processing chamber. In addition to arranging the electrodes, a heater is placed in the upper part of the processing chamber facing the flat electrode through a quartz window, and a movement path for the processing substrate mounting table is formed between the flat electrode and the heater. A processing substrate holding unit is constructed by forming a plurality of stepped holes through a processing substrate mounting table that moves intermittently in a horizontal position along a processing chamber, and a shield device is arranged in correspondence with the stopping position of the processing substrate mounting table in the processing chamber. A feature of the present invention is that this shield device is placed on the upper wall of the processing chamber so as to surround the quartz window.
【０００５】[0005]
【作用】本発明では、処理基板載せ換え部、予備加熱室
、処理室、搬送室とを閉ループに配置し、処理室内の下
部に平板電極を配置するとともに、平板電極に対向させ
て処理室の上部にクオーツウインドウを介して加熱ヒー
タを配置し、平板電極と加熱ヒータとの間に処理基板載
置台の移動路を形成し、この移動路を水平姿勢で間欠移
動する処理基板載置台に複数の段付孔を透設して処理基
板保持部を構成しているので、複数の処理基板は処理基
板載置台に搭載された状態で搬送されることになり、搬
送中に各処理基板の搬送姿勢を平行に維持できる。これ
により、特別な加熱ヒータでの加熱制御や処理ガスの供
給量制御を行うことなく、各処理基板に均一な厚さの薄
膜を形成することができる。[Operation] In the present invention, the processing substrate reloading section, the preheating chamber, the processing chamber, and the transfer chamber are arranged in a closed loop, and a flat plate electrode is arranged at the lower part of the processing chamber. A heater is placed on the top through a quartz window, and a moving path for the processed substrate mounting table is formed between the flat plate electrode and the heating heater. Since the processed substrate holder is configured with transparent stepped holes, multiple processed substrates are transported while being mounted on the processed substrate mounting table, and the transport posture of each processed substrate is changed during transport. can be kept parallel. Thereby, a thin film of uniform thickness can be formed on each processing substrate without performing heating control using a special heater or controlling the supply amount of processing gas.
【０００６】さらに、処理室内での処理基板載置台の停
止位置に対応させてシールド装置を配置し、このシール
ド装置を処理室の上壁にクオーツウインドウを取り囲む
状態で配置していることから、クオーツウインドウ側に
処理ガスが廻り込んで処理基板の裏面側を汚染したりク
オーツウインドウを汚染したりすることがなくなる。[0006]Furthermore, since a shield device is disposed corresponding to the stop position of the processing substrate mounting table in the processing chamber, and this shield device is disposed on the upper wall of the processing chamber so as to surround the quartz window, Processing gas does not enter the window side and contaminate the back side of the processing substrate or the quartz window.
【０００７】[0007]
【実施例】図面は本発明の実施例を示し、図１は処理室
での縦断面図、図２はプラズマＣＶＤ装置のレイアウト
を示す概略構成図、図３は要部の取り出し拡大図である
。[Embodiment] The drawings show an embodiment of the present invention, in which FIG. 1 is a longitudinal sectional view of a processing chamber, FIG. 2 is a schematic configuration diagram showing the layout of a plasma CVD apparatus, and FIG. 3 is an enlarged view of main parts taken out. .
【０００８】このプラズマＣＶＤ装置は、図２に示すよ
うに、処理基板載せ換え部（１）と、予備加熱室（２）
と、処理室（３）及び搬送室（４）とを平面内で閉ルー
プに配置し、処理基板載せ換え部（１）で処理基板（５
）を載置した処理基板載置台（６）を搬送機構で間欠移
動させることにより、処理基板（５）を各室で連続的に
処理するライン処理方式に構成してある。そして、処理
基板載せ換え部（１）はクリーンルーム内に開口してお
り、予備加熱室（２）、処理室（３）、搬送室（４）の
各部屋は気密室に形成してあり、減圧状態に維持されて
いる。As shown in FIG. 2, this plasma CVD apparatus includes a processing substrate reloading section (1) and a preheating chamber (2).
, the processing chamber (3) and the transfer chamber (4) are arranged in a closed loop within a plane, and the processing substrate (5) is placed in the processing substrate reloading section (1).
) is mounted on a processing substrate mounting table (6), which is intermittently moved by a transport mechanism, thereby forming a line processing system in which processing substrates (5) are continuously processed in each chamber. The processing substrate transfer section (1) opens into the clean room, and each of the preheating chamber (2), processing chamber (3), and transfer chamber (4) is formed into an airtight chamber, and the pressure is reduced. maintained in condition.
【０００９】処理室（３）は図１に示すように、下部に
平板電極（７）を配置するとともに、上部にハロゲンラ
ンプで構成した加熱ヒータ（８）をクオーツウインドウ
（９）を介して配置してあり、クオーツウインドウ（９
）と平板電極（７）との間を処理基板載置台（６）の移
動路（１０）に形成してある。そして、平行電極（７）
の上面にはシランガス等の処理ガス（プロセスガス）を
噴出するガス噴出孔が多数形成してある。また、平板電
極（７）の外周部を覆う状態でシールド板（１１）が処
理室（３）の底壁部分から一体に突設してある。As shown in FIG. 1, the processing chamber (3) has a flat plate electrode (7) arranged at the bottom and a heater (8) composed of a halogen lamp arranged at the upper part through a quartz window (9). quartz window (9
) and the flat plate electrode (7) is formed as a movement path (10) for the processing substrate mounting table (6). And parallel electrode (7)
A large number of gas ejection holes for ejecting processing gas such as silane gas are formed on the upper surface of the device. Further, a shield plate (11) is integrally provided to protrude from the bottom wall portion of the processing chamber (3) so as to cover the outer peripheral portion of the flat plate electrode (7).
【００１０】処理基板載置台（６）は、図４に示すよう
に、アルミニユーム製の基台（１２）に多数の処理基板
保持孔（１３）を透設するとともに、基台（１２）の下
面両側端部に搬送ローラ挿嵌溝（１４）を凹設して形成
してある。そして、処理基板保持孔（１３）はテーパー
孔で形成した大径部（１５）を上側に、円筒孔で形成し
た小径部（１６）を下側に配置し、大径部（１５）と小
径部（１６）の接続部に段部（１７）を形成した段付孔
で形成してあり、この段部（１７）に処理基板（５）を
その下面が平板電極（７）に対向する状態で載置するこ
とにより、処理基板（５）の下面を処理面（成膜面）と
した状態で保持するようにしてある。As shown in FIG. 4, the processing substrate mounting table (6) has a base (12) made of aluminum with a number of transparent processing substrate holding holes (13), and a lower surface of the base (12). Conveyance roller insertion grooves (14) are recessed and formed at both end portions. The processing substrate holding hole (13) has a large diameter part (15) formed by a tapered hole on the upper side and a small diameter part (16) formed by a cylindrical hole on the lower side. A stepped hole is formed in which a stepped portion (17) is formed at the connecting portion of the portion (16), and the processing substrate (5) is placed in this stepped portion (17) with its lower surface facing the flat plate electrode (7). By placing the processing substrate (5) on the substrate, the processing substrate (5) is held with the lower surface thereof serving as the processing surface (film formation surface).
【００１１】処理室（３）内での処理基板載置台（６）
の搬送機構は、処理基板載置台（６）の移動方向に沿う
処理室（３）の各側壁（１８）部分に回転軸（１９）を
磁気カップリング（２０）を介して片持ち状に支持させ
、各回転軸（１９）の処理室（３）内に位置する端部に
前記処理基板載置台（６）の搬送ローラ挿嵌溝（１４）
と嵌り合うステンレス鋼製ローラ（２１）をそれぞれ固
定し、両回転軸（１９）を駆動用モータ（２２）にタイ
ミングベルト（２３）を介してそれぞれ接続し、各駆動
用モータ（２２）を制御装置（２４）で同期回転させる
ことにより、処理基板載置台（６）を水平姿勢を維持し
たまま移動させるように構成してある。[0011] Processing substrate mounting table (6) in the processing chamber (3)
The transport mechanism includes a rotating shaft (19) supported in a cantilevered manner via a magnetic coupling (20) on each side wall (18) of the processing chamber (3) along the moving direction of the processing substrate mounting table (6). The conveyance roller insertion groove (14) of the processing substrate mounting table (6) is provided at the end of each rotating shaft (19) located in the processing chamber (3).
The stainless steel rollers (21) that fit into the two are each fixed, and both rotating shafts (19) are connected to the drive motor (22) via a timing belt (23) to control each drive motor (22). The device (24) is configured to synchronously rotate the processing substrate mounting table (6) to move the processing substrate mounting table (6) while maintaining its horizontal position.
【００１２】また、処理室（３）内での処理基板載置台
（６）の停止位置に対応させてシールド装置（２５）が
配置してある。このシールド装置（２５）は処理室（３
）の上壁にクオーツウインドウ（９）を取り囲む状態で
配置した２重ベロース（２６）と、この２重ベロース（
２６）の下端に固定した板枠（２７）及び２重ベロース
（２６）の内部に配置した板枠昇降駆動具（２８）とで
構成してある。なお、このシールド装置（２５）は板枠
（２７）を下降させたシールド姿勢において、板枠（２
７）の下面と処理基板載置台（６）の上面との間にわず
かな隙間を残すようにしてある。そして、シールド装置
（２５）で囲われている空間に水素ガス等のパージガス
を供給することにより、この空間を僅かな陽圧に形成し
、パージガスを前記隙間から流出させるようにしてある
。
なお、符号（２９）はチャンバー内を減圧するための排
気路である。[0012] Furthermore, a shield device (25) is disposed corresponding to the stopping position of the processing substrate mounting table (6) in the processing chamber (3). This shield device (25) is connected to the processing chamber (3
A double bellows (26) is placed on the upper wall of ) surrounding the quartz window (9), and this double bellows (
It consists of a plate frame (27) fixed to the lower end of the plate frame (26) and a plate frame lifting/lowering drive tool (28) disposed inside the double bellows (26). In addition, this shielding device (25) is in the shielding position where the plate frame (27) is lowered.
7) A slight gap is left between the lower surface and the upper surface of the processing substrate mounting table (6). By supplying a purge gas such as hydrogen gas to the space surrounded by the shield device (25), this space is created at a slight positive pressure, and the purge gas is caused to flow out from the gap. Note that the reference numeral (29) is an exhaust path for reducing the pressure inside the chamber.
【００１３】[0013]
【発明の効果】本発明では、処理基板載せ換え部、予備
加熱室、処理室、搬送室とを閉ループに配置し、処理室
内の下部に平板電極を配置するとともに、平板電極に対
向させて処理室の上部にクオーツウインドウを介して加
熱ヒータを配置し、平板電極と加熱ヒータとの間に処理
基板載置台の移動路を形成し、この移動路を水平姿勢で
間欠移動する処理基板載置台に複数の段付孔を透設して
処理基板保持部を構成しているので、複数の処理基板は
処理基板載置台に搭載された状態で搬送されることにな
り、搬送中に各処理基板の搬送姿勢を平行に維持できる
。これにより、特別な加熱ヒータでの加熱制御や処理ガ
スの供給量制御を行うことなく、各処理基板に均一な厚
さの薄膜を形成することができる。Effects of the Invention In the present invention, the processing substrate reloading section, the preheating chamber, the processing chamber, and the transfer chamber are arranged in a closed loop, and the flat electrode is arranged at the lower part of the processing chamber, and the processing is carried out in opposition to the flat electrode. A heater is placed in the upper part of the chamber through a quartz window, and a movement path for the processing substrate mounting table is formed between the flat plate electrode and the heating heater, and the processing substrate mounting table is moved intermittently in a horizontal position along this movement path. Since the processed substrate holder is configured with a plurality of transparent stepped holes, multiple processed substrates are transported while being mounted on the processed substrate mounting table, and each processed substrate is The transport posture can be maintained parallel. Thereby, a thin film of uniform thickness can be formed on each processing substrate without performing heating control using a special heater or controlling the supply amount of processing gas.
【００１４】さらに、処理室内での処理基板載置台の停
止位置に対応させてシールド装置を配置し、このシール
ド装置を処理室の上壁にクオーツウインドウを取り囲む
状態で配置していることから、クオーツウインドウ側に
処理ガスが廻り込んで処理基板の裏面側を汚染したり、
クオーツウインドウを汚染したりすることを無くすこと
ができる。Furthermore, the shield device is arranged in correspondence with the stop position of the processing substrate mounting table in the processing chamber, and this shield device is arranged on the upper wall of the processing chamber so as to surround the quartz window. Processing gas may enter the window side and contaminate the back side of the processing substrate,
It is possible to eliminate contamination of the quartz window.
【図１】処理室での縦断面図である。FIG. 1 is a longitudinal sectional view of a processing chamber.
【図２】プラズマＣＶＤ装置のレイアウト図である。FIG. 2 is a layout diagram of a plasma CVD apparatus.
【図３】要部の取り出し拡大図である。FIG. 3 is an enlarged view of the main parts.
【図４】処理基板載置台の搬送系を示す斜視図である。FIG. 4 is a perspective view showing a transport system of a processing substrate mounting table.
１…処理基板載せ換え部、
２…予備加熱室、３…処理室、 ４…搬送
室、６…処理基板載置台、
７…平板電極、８…加熱ヒータ、
９…クオーツウイ
ンドウ、１０…処理基板の移動路、
１３…処理基板保持部、２５…シールド
装置。1...processed board reloading section,
2... Preheating chamber, 3... Processing chamber, 4... Transfer chamber, 6... Processed substrate mounting table,
7... Flat plate electrode, 8... Heater,
9... Quartz window, 10... Processing substrate movement path,
13... Processing substrate holder, 25... Shield device.
Claims (1)
室（２）、処理室（３）、搬送室（４）とを閉ループに
配置し、処理室（３）内の下部に平板電極（７）を配置
するとともに、平板電極（７）に対向させて処理室（３
）の上部にクオーツウインドウ（９）を介して加熱ヒー
タ（８）を配置し、平板電極（７）と加熱ヒータ（８）
との間に処理基板載置台（６）の移動路（１０）を形成
し、この移動路（１０）を水平姿勢で間欠移動する処理
基板載置台（６）に複数の段付孔を透設して処理基板保
持部（１３）を構成し、処理室（３）内での処理基板載
置台（６）の停止位置に対応させてシールド装置（２５
）を配置し、このシールド装置（２５）を処理室（３）
の上壁にクオーツウインドウ（９）を取り囲む状態で配
置したライン式プラズマＣＶＤ装置。Claim 1: A processing substrate reloading section (1), a preheating chamber (2), a processing chamber (3), and a transfer chamber (4) are arranged in a closed loop, and a flat plate electrode is installed in the lower part of the processing chamber (3). (7) and facing the flat electrode (7) in the processing chamber (3).
), a heater (8) is placed through the quartz window (9), and the flat electrode (7) and heater (8)
A movement path (10) for the processing substrate mounting table (6) is formed between the processing substrate mounting table (6) and a plurality of stepped holes are formed through the processing substrate mounting table (6) that moves intermittently in a horizontal position on this movement path (10). The processing substrate holder (13) is configured by a shield device (25) corresponding to the stopping position of the processing substrate mounting table (6) in the processing chamber (3).
), and this shield device (25) is installed in the processing chamber (3).
A line-type plasma CVD device is placed on the upper wall of the cellar to surround a quartz window (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3124990A JPH0737670B2 (en) | 1991-04-26 | 1991-04-26 | Line type plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3124990A JPH0737670B2 (en) | 1991-04-26 | 1991-04-26 | Line type plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04325687A true JPH04325687A (en) | 1992-11-16 |
| JPH0737670B2 JPH0737670B2 (en) | 1995-04-26 |
Family
ID=14899181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3124990A Expired - Lifetime JPH0737670B2 (en) | 1991-04-26 | 1991-04-26 | Line type plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737670B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003018870A3 (en) * | 2001-08-24 | 2003-05-22 | Roth & Rau Oberflaechentechnik | Device for reactive plasma treatment of substrates and method for the use thereof |
| US8277893B2 (en) | 2005-09-05 | 2012-10-02 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1851367B1 (en) | 2005-02-03 | 2012-08-08 | Rec Scanwafer AS | Method and device for producing oriented solidified blocks made of semi-conductor material |
-
1991
- 1991-04-26 JP JP3124990A patent/JPH0737670B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003018870A3 (en) * | 2001-08-24 | 2003-05-22 | Roth & Rau Oberflaechentechnik | Device for reactive plasma treatment of substrates and method for the use thereof |
| US8277893B2 (en) | 2005-09-05 | 2012-10-02 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0737670B2 (en) | 1995-04-26 |
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