JPH04324209A - Oxide superconductive wire and its manufacture - Google Patents
Oxide superconductive wire and its manufactureInfo
- Publication number
- JPH04324209A JPH04324209A JP3122329A JP12232991A JPH04324209A JP H04324209 A JPH04324209 A JP H04324209A JP 3122329 A JP3122329 A JP 3122329A JP 12232991 A JP12232991 A JP 12232991A JP H04324209 A JPH04324209 A JP H04324209A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- thin film
- superconducting
- magnetic field
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 229910002480 Cu-O Inorganic materials 0.000 claims abstract description 30
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 6
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 4
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 4
- 239000002887 superconductor Substances 0.000 abstract description 30
- 239000000463 material Substances 0.000 abstract description 17
- 239000004020 conductor Substances 0.000 abstract description 5
- 229910052691 Erbium Inorganic materials 0.000 abstract description 4
- 229910052693 Europium Inorganic materials 0.000 abstract description 4
- 229910000510 noble metal Inorganic materials 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、超電導マグネット、超
電導電力輸送、医用機器、超電導エネルギー貯蔵などと
して用いられる酸化物超電導線に係わり、更に詳細には
Ｂｉ系超電導体とＹ系などのＡ−Ｂ−Ｃｕ−Ｏ系超電導
体とを組み合わせることによって磁界特性を向上させた
酸化物超電導線とその製造方法に関する。[Industrial Application Field] The present invention relates to oxide superconducting wires used for superconducting magnets, superconducting power transport, medical equipment, superconducting energy storage, etc., and more specifically relates to oxide superconducting wires such as Bi-based superconductors and Y-based A- The present invention relates to an oxide superconducting wire with improved magnetic field characteristics by combining it with a B--Cu--O based superconductor, and a method for manufacturing the same.
【０００２】0002
【従来の技術】近年、超電導状態から常電導状態に遷移
する臨界温度（Ｔｃ）が液体窒素温度以上の高い値を示
す酸化物系超電導体が種々発見されつつある。この種の
酸化物系超電導体は、液体ヘリウムで冷却する必要のあ
った従来の合金系あるいは金属間化合物系の超電導体に
比較して格段に有利な冷却条件で使用できることから、
実用上極めて有望な超電導材料として種々の研究と開発
がなされている。BACKGROUND OF THE INVENTION In recent years, various oxide superconductors have been discovered whose critical temperature (Tc) for transition from a superconducting state to a normal conducting state is higher than the temperature of liquid nitrogen. This type of oxide-based superconductor can be used under much more advantageous cooling conditions than conventional alloy-based or intermetallic compound-based superconductors, which require cooling with liquid helium.
Various research and developments are being conducted on superconducting materials that are extremely promising for practical use.
【０００３】これらの酸化物超電導体の内でも、Ｂｉ系
超電導体（Ｂｉ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ、（Ｂｉ，Ｐｂ
）−Ｓｒ−Ｃａ−Ｃｕ−Ｏなど）やＹ系超電導体（Ｙ−
Ｂａ−Ｃｕ−Ｏなど）は、線材化や薄膜に加工して高い
臨界電流密度（Ｊｃ）が得られることから、これらの超
電導体を用いた超電導線材や超電導薄膜が試作され、実
用化に向けての研究が進められつつある。Among these oxide superconductors, Bi-based superconductors (Bi-Sr-Ca-Cu-O, (Bi, Pb
)-Sr-Ca-Cu-O, etc.) and Y-based superconductors (Y-
Since high critical current densities (Jc) can be obtained by processing superconductors (Ba-Cu-O, etc.) into wires or thin films, prototype superconducting wires and superconducting thin films using these superconductors have been produced, with the aim of putting them into practical use. Research is currently underway.
【０００４】例えばＢｉ系超電導体の一例としてＢｉ２
Ｓｒ２Ｃａ１Ｃｕ２Ｏｙ、Ｂｉ２Ｓｒ２Ｃａ２Ｃｕ３Ｏ
ｙなどの酸化物超電導材料は、Ａｇなどの貴金属シース
に充填して圧延やプレス工程を経て、最終的に熱処理す
ることにより、臨界電流密度（Ｊｃ）＝１０４Ａ／ｃｍ
２（７７Ｋ，０Ｔ）台を確保することができる超電導線
材が得られるようになった。またＹ系超電導体にあって
は、レーザ蒸着法やＣＶＤ法などの薄膜形成手段を用い
てセラミックス製基板や金属基板上に超電導薄膜を形成
することにより、Ｊｃ＝１０６Ａ／ｃｍ２（７７Ｋ，０
Ｔ）台の超電導薄膜が得られている。For example, Bi2 is an example of a Bi-based superconductor.
Sr2Ca1Cu2Oy, Bi2Sr2Ca2Cu3O
Oxide superconducting materials such as y are filled into a noble metal sheath such as Ag, subjected to rolling and pressing processes, and finally heat treated to achieve a critical current density (Jc) of 104 A/cm.
2 (77K, 0T) level can now be obtained. For Y-based superconductors, Jc = 106 A/cm2 (77K, 0
T) superconducting thin films have been obtained.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、これら
従来の超電導体には次のような問題があった。まず前者
のＢｉ系超電導体では、この材料はピンニングセンタと
して効くものがみつからず、液体窒素温度（７７Ｋ）で
は磁界特性が非常に低いのが実情である。図６はＢｉ−
Ｓｒ−Ｃａ−Ｃｕ−Ｏ（ＢＳＣＣＯ）を用いて作製され
た線材（Ａｇシース線材）のＪｃ−Ｂ特性を示すグラフ
であって、このグラフから明らかなようにこの線材は０
Ｔで１０４Ａ／ｃｍ２あった臨界電流密度が１Ｔの印加
磁場状態では１０２Ａ／ｃｍ２台に低下してしまう。そ
こでＢｉ系超電導線材を実用化するための１つの方法と
して、線材を４．２Ｋに冷却して使用する試みもなされ
ている。図７は４．２ＫにおけるＢＳＣＣＯなどの超電
導線材（Ａｇシース線材）のＪｃ−Ｂ特性を示すグラフ
である。この図から分かるように、ＢＳＣＣＯ線材は４
．２Ｋまで冷却して使用することにより高磁界側でも比
較的高いＪｃが得られるものの、この温度まで冷却する
には高価な液体ヘリウムで冷却する必要があり、安価な
液体窒素で冷却して使用できる高温超電導体としての利
点を損なうことになる。[Problems to be Solved by the Invention] However, these conventional superconductors have the following problems. First, regarding the former Bi-based superconductor, no material has been found that is effective as a pinning center, and the fact is that the magnetic field characteristics are extremely low at liquid nitrogen temperature (77K). Figure 6 shows Bi-
This is a graph showing the Jc-B characteristics of a wire rod (Ag sheath wire rod) made using Sr-Ca-Cu-O (BSCCO), and as is clear from this graph, this wire rod has a
The critical current density, which was 104 A/cm2 at T, drops to the 102 A/cm2 level when a magnetic field of 1 T is applied. Therefore, as one method for putting Bi-based superconducting wire into practical use, attempts have been made to cool the wire to 4.2K before use. FIG. 7 is a graph showing the Jc-B characteristics of a superconducting wire (Ag sheath wire) such as BSCCO at 4.2K. As you can see from this figure, the BSCCO wire is 4
．． By cooling to 2K and using it, a relatively high Jc can be obtained even on the high magnetic field side, but cooling to this temperature requires cooling with expensive liquid helium, but it can be used by cooling with inexpensive liquid nitrogen. This would impair its advantages as a high-temperature superconductor.
【０００６】また後者のＹ系超電導薄膜では、１０６Ａ
／ｃｍ２（７７Ｋ，０Ｔ）台の高い臨界電流密度が得ら
れ、しかも製法によっては優れた磁界特性を示すものも
多い。図８および図９はレーザアブレーション法により
成膜されたＹ系超電導薄膜のＪｃ−Ｂ特性を示すもので
あって、図８は０〜１Ｔの範囲でのＪｃ−Ｂ特性を示し
、図９はレーザ照射エネルギーを１．３Ｊ／ｃｍ２と１
．１Ｊ／ｃｍ２として作製した薄膜の高磁界でのＪｃ−
Ｂ特性を示している。図８から分かるようにＹ系超電導
薄膜では１Ｔの印加磁場であっても１０６Ａ／ｃｍ２台
のＪｃが得られ、図９に示すように１Ｔを超える高磁場
強度であっても比較的安定したＪｃが得られる。しかし
このＹ系超電導薄膜は、単結晶基板上に薄膜形成手段に
よって形成された薄い膜であるために、臨界電流（Ｉｃ
）が大きくとれず、コイル用、電力輸送用等の電力応用
分野に適用させることが困難であった。Furthermore, in the latter Y-based superconducting thin film, 106A
A high critical current density on the order of /cm2 (77K, 0T) can be obtained, and depending on the manufacturing method, many exhibit excellent magnetic field characteristics. 8 and 9 show the Jc-B characteristics of a Y-based superconducting thin film formed by laser ablation, and FIG. 8 shows the Jc-B characteristics in the range of 0 to 1T, and FIG. Laser irradiation energy is 1.3J/cm2 and 1
．． Jc- in a high magnetic field of a thin film prepared at 1 J/cm2
It shows B characteristic. As can be seen from Figure 8, the Y-based superconducting thin film can obtain a Jc of 106A/cm2 even with an applied magnetic field of 1T, and as shown in Figure 9, a relatively stable Jc can be obtained even with a high magnetic field strength exceeding 1T. is obtained. However, since this Y-based superconducting thin film is a thin film formed by thin film forming means on a single crystal substrate, the critical current (Ic
) cannot be made large, making it difficult to apply it to power application fields such as coils and power transportation.
【０００７】本発明は上記事情に鑑みてなされたもので
、幅広い磁界範囲で電力応用分野に適用可能な酸化物超
電導線の提供を目的としている。The present invention has been made in view of the above circumstances, and aims to provide an oxide superconducting wire that can be applied to electric power applications over a wide range of magnetic fields.
【０００８】[0008]
【課題を解決するための手段】かかる課題は、Ａｇ等の
貴金属製シースにＢｉ系超電導体が充填されたＢｉ系超
電導線材の表面に、Ａ−Ｂ−Ｃｕ−Ｏ系（ただし、Ａは
Ｙ，Ｓｃ，Ｌａ，Ｙｂ，Ｅｒ，Ｅｕ，Ｈｏ，Ｄｙ等の周
期律表ＩＩＩａ族元素の１種類以上を表わし、ＢはＢａ
，Ｓｒ，Ｃａ等の周期律表ＩＩａ族元素の１種類以上を
表わす）超電導薄膜を成膜した酸化物超電導線によって
解消される。[Means for solving the problem] This problem is solved by applying an A-B-Cu-O system (where A is Y , Sc, La, Yb, Er, Eu, Ho, Dy, etc., represents one or more elements of group IIIa of the periodic table, and B is Ba.
This problem can be solved by using an oxide superconducting wire formed with a superconducting thin film (representing one or more elements of group IIa of the periodic table, such as , Sr, Ca, etc.).
【０００９】また上記酸化物超電導線の製造方法として
は、Ａｇ等の貴金属製シースにＢｉ系超電導体が充填さ
れたＢｉ系超電導線材の表面に、レーザ蒸着法、ＣＶＤ
法などの薄膜形成手段によって、Ａ−Ｂ−Ｃｕ−Ｏ系（
ただし、ＡはＹ，Ｓｃ，Ｌａ，Ｙｂ，Ｅｒ，Ｅｕ，Ｈｏ
，Ｄｙ等の周期律表ＩＩＩａ族元素の１種類以上を表わ
し、ＢはＢａ，Ｓｒ，Ｃａ等の周期律表ＩＩａ族元素の
１種類以上を表わす）超電導薄膜を成膜する方法が好適
である。[0009] Further, as a method for manufacturing the above-mentioned oxide superconducting wire, the surface of a Bi-based superconducting wire in which a sheath made of a noble metal such as Ag is filled with a Bi-based superconductor is coated with a laser vapor deposition method, a CVD method, etc.
A-B-Cu-O system (
However, A is Y, Sc, La, Yb, Er, Eu, Ho
, Dy, etc., and B represents one or more elements of Group IIa of the periodic table, such as Ba, Sr, Ca, etc.) A method of forming a superconducting thin film is preferred. .
【００１０】0010
【作用】本発明の酸化物超電導線は、低磁界で大電流を
確保できるＢｉ系超電導体と、比較的高磁界でも電流密
度が極端に低下しないＹ系などのＡ−Ｂ−Ｃｕ−Ｏ系と
を組み合わせたことによって、低磁界側で大電流を確保
できるとともに高磁界側での急激な電流密度の低下を緩
和でき、低磁界〜高磁界に適用できる超電導体となる。[Function] The oxide superconducting wire of the present invention is made of a Bi-based superconductor that can secure a large current in a low magnetic field, and an A-B-Cu-O based material such as a Y-based material whose current density does not drop drastically even in a relatively high magnetic field. By combining these, a large current can be ensured on the low magnetic field side, and a rapid drop in current density on the high magnetic field side can be alleviated, resulting in a superconductor that can be applied to low to high magnetic fields.
【００１１】[0011]
【実施例】図１は、本発明に係わる酸化物超電導線の第
１実施例を示す図である。この酸化物超電導線１はＡｇ
シース２内にＢｉ系超電導体３を充填してテープ状に縮
径加工したＢｉ系線材４の上面側に、Ａ−Ｂ−Ｃｕ−Ｏ
系超電導薄膜５を成膜した構成になっている。Embodiment FIG. 1 is a diagram showing a first embodiment of an oxide superconducting wire according to the present invention. This oxide superconducting wire 1 is made of Ag
A-B-Cu-O is placed on the upper surface side of the Bi-based wire 4 which is filled with the Bi-based superconductor 3 in the sheath 2 and processed to reduce its diameter into a tape shape.
It has a structure in which a superconducting thin film 5 is formed.
【００１２】本発明に使用されるＢｉ系超電導体として
は、Ｂｉ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ（ＢＳＣＣＯ）系と称
される超電導体であり、これらの系のうちでも液体窒素
温度（７７Ｋ）以上の高い臨界温度（Ｔｃ）が得られる
材料、例えばＢｉ２Ｓｒ２Ｃａ１Ｃｕ２Ｏｙ（２２１２
系という）、Ｂｉ２Ｓｒ２Ｃａ２Ｃｕ３Ｏｙ（２２２３
系という）や、これらの組成のうちＢｉの一部をＰｂで
置換したもの、あるいはＳｒの一部をＹ等の周期律表Ｉ
ＩＩａ族元素で置換したものなどがあり、特に上記２２
２３系超電導体が好適に使用される。The Bi-based superconductor used in the present invention is a superconductor called a Bi-Sr-Ca-Cu-O (BSCCO) system, and among these systems, the temperature at liquid nitrogen temperature (77K) is Materials that can obtain a high critical temperature (Tc) above, for example, Bi2Sr2Ca1Cu2Oy (2212
system), Bi2Sr2Ca2Cu3Oy (2223
(referred to as system), among these compositions, part of Bi is replaced with Pb, or part of Sr is replaced with Y, etc.
There are those substituted with Group IIa elements, especially the above 22
23 series superconductors are preferably used.
【００１３】また本発明に使用されるＡ−Ｂ−Ｃｕ−Ｏ
系（ただし、ＡはＹ，Ｓｃ，Ｌａ，Ｙｂ，Ｅｒ，Ｅｕ，
Ｈｏ，Ｄｙ等の周期律表ＩＩＩａ族元素の１種類以上を
表わし、ＢはＢａ，Ｓｒ，Ｃａ等の周期律表ＩＩａ族元
素の１種類以上を表わす）超電導体についても臨界温度
（Ｔｃ）が７７Ｋ以上を示す材料が使用され、代表的な
材料を例示すればＹ１Ｂａ２Ｃｕ３Ｏｙである。A-B-Cu-O used in the present invention
system (where A is Y, Sc, La, Yb, Er, Eu,
The critical temperature (Tc) of superconductors is also A material exhibiting a temperature of 77K or more is used, and a typical example of the material is Y1Ba2Cu3Oy.
【００１４】またこの実施例ではＢｉ系線材４のシース
材料としてＡｇシース２を用いたが、シース材料はＡｇ
に限定される事無く、Ｐｄ、Ｐｔ、Ａｕ、Ａｇ−Ｐｄ合
金、Ｐｔ合金などの貴金属およびその合金類が使用可能
である。Furthermore, in this embodiment, the Ag sheath 2 was used as the sheath material of the Bi-based wire 4;
Noble metals such as Pd, Pt, Au, Ag-Pd alloys, Pt alloys, and alloys thereof can be used without being limited to these.
【００１５】Ｂｉ系線材４の表面にＡ−Ｂ−Ｃｕ−Ｏ系
超電導薄膜５を成膜するのに好適な薄膜形成手段として
は、レーザ蒸着法やＣＶＤ法などがある。これらの蒸着
法では、チャンバ内を完全な真空状態でなく若干の酸素
分圧も確保されること、および成膜条件も７００℃程度
、２０分〜２時間程度と、Ｂｉ系線材４の最終熱処理条
件に比べ低温で短時間であり、最終熱処理を終えたＢｉ
系線材４の超電導特性にあまり影響を及ぼさないことか
ら、本発明における酸化物超電導線の製造において好適
な蒸着法である。Suitable thin film forming means for forming the A-B-Cu-O superconducting thin film 5 on the surface of the Bi-based wire 4 include laser vapor deposition and CVD. In these vapor deposition methods, the chamber is not in a complete vacuum state, but a slight oxygen partial pressure is also ensured, and the film forming conditions are approximately 700°C for approximately 20 minutes to 2 hours, and the final heat treatment of the Bi-based wire 4 is required. Bi
This vapor deposition method is suitable for manufacturing the oxide superconducting wire in the present invention because it does not significantly affect the superconducting properties of the wire material 4.
【００１６】この酸化物超電導線１の製造方法を説明す
ると、まずＢｉ系超電導体を構成する各元素の化合物（
酸化物や炭酸塩など）を所定の比で配合し、これを仮焼
し、得られた仮焼結体を粉砕する。次にこの粉末をＡｇ
パイプ内に充填し、伸線加工、圧延またはプレス加工な
どにより所望の寸法の線材とし、これを熱処理すること
によりＢｉ系線材４とする。次に、このＢｉ系線材４を
レーザ蒸着装置あるいはＣＶＤ装置のチャンバ内に入れ
、所定の基板固定位置に取り付ける。そしてレーザ蒸着
法あるいはＣＶＤ法によりＢｉ系線材４の表面にＹ系超
電導体などのＡ−Ｂ−Ｃｕ−Ｏ系超電導薄膜５を成膜す
る。以上の操作により図１に示す酸化物超電導線１が得
られる。To explain the manufacturing method of this oxide superconducting wire 1, first, compounds (
oxides, carbonates, etc.) in a predetermined ratio, this is calcined, and the obtained calcined body is crushed. Next, add this powder to Ag
It is filled into a pipe and made into a wire rod of desired dimensions by wire drawing, rolling, pressing, etc., and then heat treated to form a Bi-based wire rod 4. Next, this Bi-based wire 4 is put into a chamber of a laser evaporation device or a CVD device and attached to a predetermined substrate fixing position. Then, an A-B-Cu-O-based superconducting thin film 5 such as a Y-based superconductor is formed on the surface of the Bi-based wire 4 by laser evaporation or CVD. By the above operations, the oxide superconducting wire 1 shown in FIG. 1 is obtained.
【００１７】この酸化物超電導線１は、単独であるいは
多数本束ね、液体窒素により冷却した状態で電力輸送用
超電導線として使用される他、スパイラル状に巻いてコ
イル化し、液体窒素冷却下で超電導マグネットとして発
電用、核融合用、リニヤモータ車両や磁気推進船などの
輸送手段、医療用などの種々の用途に適用が可能である
。This oxide superconducting wire 1 can be used as a superconducting wire for power transmission either singly or in a bundle, cooled with liquid nitrogen, or can be spirally wound into a coil and made superconducting under cooling with liquid nitrogen. It can be applied as a magnet to various uses such as power generation, nuclear fusion, transportation such as linear motor vehicles and magnetic propulsion ships, and medical use.
【００１８】この酸化物超電導線１は、Ｂｉ系線材４と
Ｙ系などのＡ−Ｂ−Ｃｕ−Ｏ系超電導薄膜５を複合化し
たものであるので、寸法的にはＢｉ系線材４と殆ど変化
しない導体として高Ｉｃを確保できる。また低磁界側で
大電流を確保できるＢｉ系線材４と、Ｉｃは若干低いが
高磁界側でもＢｉ系超電導体ほど急激な性能低下を生じ
ないＹ系などのＡ−Ｂ−Ｃｕ−Ｏ系超電導薄膜４を組み
合わせることにより低磁界から高磁界に適用できる電力
用導体となる。さらにＹ系などのＡ−Ｂ−Ｃｕ−Ｏ系超
電導薄膜５を形成する手段として、レーザ蒸着法あるい
はＣＶＤ法は、チャンバ内が完全な真空でなく若干Ｏ２
分圧も確保されること、および成膜条件も７００℃〜７
５０℃で２０分〜２時間程度であり、Ｂｉ系線材４の最
終熱処理条件に比べると低温で短時間であることから、
最終熱処理を終えたＢｉ系線材４の特性にあまり影響を
及ぼさずに高特性の複合超電導線を製造できる。This oxide superconducting wire 1 is a composite of a Bi-based wire 4 and an A-B-Cu-O-based superconducting thin film 5 such as a Y-based material, so that it is almost the same size as the Bi-based wire 4. As a conductor that does not change, a high Ic can be ensured. In addition, Bi-based wire 4, which can secure a large current on the low magnetic field side, and A-B-Cu-O based superconductors such as Y-based wires, which have a slightly lower Ic but do not cause as sudden a performance drop as Bi-based superconductors even on the high magnetic field side. By combining the thin films 4, it becomes a power conductor that can be applied from low magnetic fields to high magnetic fields. Furthermore, as a means for forming the A-B-Cu-O based superconducting thin film 5 such as Y based, the laser evaporation method or the CVD method does not have a complete vacuum in the chamber but a slight O2.
The partial pressure must also be ensured, and the film forming conditions must also be 700°C to 700°C.
It is about 20 minutes to 2 hours at 50 ° C., which is a low temperature and short time compared to the final heat treatment conditions for Bi-based wire 4.
A composite superconducting wire with high characteristics can be manufactured without significantly affecting the characteristics of the Bi-based wire 4 that has undergone the final heat treatment.
【００１９】図２は本発明に係わる酸化物超電導線の第
２実施例を示す図である。この酸化物超電導線１１は、
図１の酸化物超電導線１のＡ−Ｂ−Ｃｕ−Ｏ系超電導薄
膜５上に、厚さ数μｍのＡｇ薄膜１２を蒸着した構成に
なっている。このＡｇ薄膜１２を形成するには、真空蒸
着装置など周知の金属薄膜形成手段を用いることができ
る。FIG. 2 is a diagram showing a second embodiment of the oxide superconducting wire according to the present invention. This oxide superconducting wire 11 is
It has a structure in which an Ag thin film 12 with a thickness of several μm is deposited on the AB-Cu-O based superconducting thin film 5 of the oxide superconducting wire 1 shown in FIG. To form this Ag thin film 12, a known metal thin film forming means such as a vacuum evaporation apparatus can be used.
【００２０】この実施例による酸化物超電導線１１は、
第１実施例の酸化物超電導線１とほぼ同様の効果が得ら
れる他、Ａ−Ｂ−Ｃｕ−Ｏ系超電導薄膜５上にＡｇ薄膜
１２を形成したことによって、このＡｇ薄膜１２が安定
化材となるとともに超電導薄膜５の機械的強度を向上さ
せることができ、超電導線の加工性が向上する。The oxide superconducting wire 11 according to this example is as follows:
In addition to obtaining almost the same effect as the oxide superconducting wire 1 of the first embodiment, by forming the Ag thin film 12 on the A-B-Cu-O based superconducting thin film 5, this Ag thin film 12 becomes a stabilizing material. At the same time, the mechanical strength of the superconducting thin film 5 can be improved, and the workability of the superconducting wire can be improved.
【００２１】図３は本発明に係わる酸化物超電導線の第
３実施例を示す図である。この酸化物超電導線２１は、
Ｂｉ系線材４の上に、この線材４のシース材料とＡ−Ｂ
−Ｃｕ−Ｏ系超電導薄膜５との拡散反応を防止するため
のバッファ層２２を形成し、このバッファ層２２上にＡ
−Ｂ−Ｃｕ−Ｏ系超電導薄膜５を成膜して構成されてい
る。このバッファ層２２の材料としては、ＹＳＺ（安定
化ジルコニア）、ＭｇＯ、ＳｒＴｉＯ３等のセラミック
材料が好適に使用される。このバッファ層２２の厚さは
数μｍあれば十分である。Ｂｉ系線材４上にこの種のバ
ッファ層２２を形成するには、スパッタリング法や電子
ビーム蒸着法などの他に、Ａ−Ｂ−Ｃｕ−Ｏ系超電導薄
膜５の形成に好適に用いられるレーザ蒸着法、ＣＶＤ法
などが使用される。なおＢｉ系線材４上にバッファ層２
２を成膜し、引き続いて同一装置でターゲット材料ある
いは原料ガスを切り替えてバッファ層２２上にＡ−Ｂ−
Ｃｕ−Ｏ系超電導薄膜５を成膜することも勿論可能であ
る。FIG. 3 is a diagram showing a third embodiment of an oxide superconducting wire according to the present invention. This oxide superconducting wire 21 is
The sheath material of this wire 4 and A-B are placed on the Bi-based wire 4.
A buffer layer 22 is formed on this buffer layer 22 to prevent a diffusion reaction with the Cu-O based superconducting thin film 5.
-B-Cu-O based superconducting thin film 5 is formed. As the material for this buffer layer 22, ceramic materials such as YSZ (stabilized zirconia), MgO, and SrTiO3 are preferably used. It is sufficient for the thickness of this buffer layer 22 to be several μm. To form this type of buffer layer 22 on the Bi-based wire 4, in addition to sputtering, electron beam evaporation, etc., laser evaporation, which is preferably used to form the A-B-Cu-O superconducting thin film 5, can be used. method, CVD method, etc. are used. Note that a buffer layer 2 is provided on the Bi-based wire 4.
2 was formed into a film, and then the target material or raw material gas was changed using the same device to form a film A-B- on the buffer layer 22.
Of course, it is also possible to form a Cu-O based superconducting thin film 5.
【００２２】この酸化物超電導線２１は、Ｂｉ線材４と
Ａ−Ｂ−Ｃｕ−Ｏ系超電導薄膜５の間に、これら各層間
の拡散反応を防止するバッファ層２２を設けたので、Ａ
−Ｂ−Ｃｕ−Ｏ系超電導薄膜２２に不純物が拡散するこ
とがなく超電導薄膜２２の特性が劣化するおそれがない
。This oxide superconducting wire 21 has a buffer layer 22 provided between the Bi wire 4 and the A-B-Cu-O superconducting thin film 5 to prevent diffusion reactions between these layers.
Impurities do not diffuse into the -B-Cu-O-based superconducting thin film 22, and there is no possibility that the characteristics of the superconducting thin film 22 will deteriorate.
【００２３】なお前述した各実施例では、Ｂｉ系線材４
の片面にのみＡ−Ｂ−Ｃｕ−Ｏ系超電導薄膜５を形成し
たが、この超電導薄膜２２をＢｉ系線材４の両面あるい
は全面に形成することもできる。[0023] In each of the above-mentioned embodiments, the Bi-based wire 4
Although the A-B-Cu-O based superconducting thin film 5 is formed only on one side of the Bi based wire 4, this superconducting thin film 22 can also be formed on both sides or the entire surface of the Bi based wire 4.
【００２４】また前述の各実施例ではテープ状のＢｉ系
線材４を用いたが、Ｂｉ系線材はこれに限定される事無
く、例えば断面が円形のＢｉ系線材を用いその周囲にＡ
−Ｂ−Ｃｕ−Ｏ系超電導薄膜を成膜することも可能であ
る。Further, in each of the above-mentioned embodiments, a tape-shaped Bi-based wire 4 was used, but the Bi-based wire is not limited to this. For example, a Bi-based wire with a circular cross section may be used, and A
It is also possible to form a -B-Cu-O based superconducting thin film.
【００２５】（実験例１） Ｂｉ系超電導材料として
、Ｂｉの２０％をＰｂで置換した（Ｂｉ，Ｐｂ）−Ｓｒ
−Ｃａ−Ｃｕ−Ｏ（２２２３系）を選んだ。Ｂｉ２Ｏ３
，ＰｂＯ，ＳｒＣＯ３，ＣａＣＯ３，ＣｕＯをＢｉ：Ｐ
ｂ：Ｓｒ：Ｃａ：Ｃｕ＝１．６：０．４：２：２：３の
比で配合し、７５０〜８７０℃の温度範囲で８〜２００
時間仮焼、焼結したものを粉砕し、Ａｇ製パイプに充填
し、スウェージ伸線により縮径し、圧延またはプレス加
工と熱処理の組み合わせにより、Ｂｉ系Ａｇシース線材
とした。次にこの線材をレーザ蒸着装置の基板位置に取
り付けた。ターゲット材としてＹ−Ｂａ−Ｃｕ−Ｏ（Ｙ
：Ｂａ：Ｃｕ＝１：２：３）を用い、レーザとしてＡｒ
Ｆエキシマレーザを用い、基板温度＝７００℃、酸素分
圧＝２００ｍＴｏｒｒとし、Ｂｉ系Ａｇシース線の一方
の面側にＹ１Ｂａ２Ｃｕ３Ｏｙ薄膜を成膜した。このレ
ーザ蒸着の成膜速度は１μｍ／時間であり、２時間かけ
て２μｍの薄膜を成膜した。(Experimental Example 1) As a Bi-based superconducting material, (Bi, Pb)-Sr in which 20% of Bi was replaced with Pb
-Ca-Cu-O (2223 series) was selected. Bi2O3
, PbO, SrCO3, CaCO3, CuO to Bi:P
B:Sr:Ca:Cu=1.6:0.4:2:2:3 ratio, 8-200℃ in the temperature range of 750-870℃
The time-calcined and sintered material was pulverized, filled into an Ag pipe, reduced in diameter by swage wire drawing, and made into a Bi-based Ag sheathed wire by a combination of rolling or press working and heat treatment. Next, this wire was attached to the substrate position of a laser evaporation device. Y-Ba-Cu-O (Y
:Ba:Cu=1:2:3) and Ar as a laser.
Using an F excimer laser, a Y1Ba2Cu3Oy thin film was formed on one side of the Bi-based Ag sheath wire at a substrate temperature of 700° C. and an oxygen partial pressure of 200 mTorr. The film formation rate of this laser vapor deposition was 1 μm/hour, and a 2 μm thin film was formed over 2 hours.
【００２６】成膜前のＢｉ系Ａｇシース線材（厚さ０．
２ｍｍ、幅３ｍｍのテープ状）の特性は、Ｊｃ＝２×１
０４Ａ／ｃｍ２、Ｉｃは約１８Ａ（いずれも７７Ｋ，０
Ｔ）であった。またＹ１Ｂａ２Ｃｕ３Ｏｙ薄膜のＡｇ単
独基板での特性は、Ｊｃ＝８×１０４Ａ／ｃｍ２、Ｉｃ
は約５Ａ（いずれも７７Ｋ，０Ｔ）であった。これらＢ
ｉ系線材、Ｙ系薄膜および複合材のＩｃ−Ｂ特性を図４
に示した。図４のグラフから判るように、この複合材は
低磁界側でＩｃが高く、比較的高磁界側でもＩｃが高く
優れた磁界特性を有する高Ｉｃ線材であることが明らか
である。[0026] Bi-based Ag sheath wire (thickness 0.
The characteristics of the tape (2 mm, width 3 mm) are Jc = 2 x 1
04A/cm2, Ic is approximately 18A (both 77K, 0
T). Furthermore, the characteristics of the Y1Ba2Cu3Oy thin film on a single Ag substrate are Jc=8×104A/cm2, Ic
was about 5A (both 77K, 0T). These B
Figure 4 shows the Ic-B characteristics of the i-based wire, Y-based thin film, and composite material.
It was shown to. As can be seen from the graph in FIG. 4, this composite material has a high Ic on the low magnetic field side and a high Ic on the relatively high magnetic field side, making it clear that it is a high Ic wire having excellent magnetic field characteristics.
【００２７】（実験例２）実験例１と同様のＢｉ系Ａｇ
シース線材を、ＣＶＤ装置の基板位置に取り付け、表１
に示した条件でＣＶＤ蒸着を行なって、Ｂｉ系Ａｇシー
ス線材の一方の面側に厚さ８μｍのＹ１Ｂａ２Ｃｕ３Ｏ
ｙ薄膜を成膜した。(Experimental Example 2) Bi-based Ag similar to Experimental Example 1
Attach the sheath wire to the substrate position of the CVD device, and
CVD deposition was performed under the conditions shown in , and Y1Ba2Cu3O with a thickness of 8 μm was deposited on one side of the Bi-based Ag sheath wire.
A thin film was formed.
【００２８】成膜前のＢｉ系Ａｇシース線材の特性は実
験例１と同じである。またＹ１Ｂａ２Ｃｕ３Ｏｙ薄膜の
Ａｇ単独基板での特性は、Ｊｃ＝５×１０４Ａ／ｃｍ２
、Ｉｃ＝１１Ａ（いずれも７７Ｋ，０Ｔ）であった。こ
れらＢｉ系線材、Ｙ系薄膜および複合材のＩｃ−Ｂ特性
を図５に示した。図５のグラフから、この複合材は優れ
た磁界特性を有する高Ｉｃ線材であることが明らかであ
る。The characteristics of the Bi-based Ag sheathed wire before film formation are the same as in Experimental Example 1. Furthermore, the characteristics of the Y1Ba2Cu3Oy thin film on a single Ag substrate are Jc=5×104A/cm2
, Ic=11A (both 77K, 0T). The Ic-B characteristics of these Bi-based wires, Y-based thin films, and composite materials are shown in FIG. From the graph of FIG. 5, it is clear that this composite material is a high Ic wire with excellent magnetic field properties.
【００２９】[0029]
【発明の効果】以上説明したように、本発明に係わる酸
化物超電導線は、Ｂｉ系超電導線とＹ系などのＡ−Ｂ−
Ｃｕ−Ｏ系超電導薄膜を複合化したものであるので、寸
法的にはＢｉ系超電導線と殆ど変化しない導体として高
Ｉｃを確保できる。Effects of the Invention As explained above, the oxide superconducting wire according to the present invention is composed of a Bi-based superconducting wire and a Y-based superconducting wire.
Since it is a composite of Cu--O based superconducting thin films, it is possible to ensure a high Ic as a conductor that is dimensionally almost the same as a Bi-based superconducting wire.
【００３０】また低磁界側で大電流を確保できるＢｉ系
超電導線と、Ｉｃは若干低いが高磁界側でもＢｉ系超電
導線ほど急激な性能低下を生じないＹ系などのＡ−Ｂ−
Ｃｕ−Ｏ系超電導薄膜を組み合わせることにより低磁界
から高磁界に適用できる電力用導体となる。In addition, Bi-based superconducting wires that can secure a large current on the low magnetic field side, and A-B- such as Y-based superconducting wires, which have a slightly lower Ic but do not cause as sudden a drop in performance as Bi-based superconducting wires even on the high magnetic field side.
By combining Cu-O based superconducting thin films, it becomes a power conductor that can be applied from low to high magnetic fields.
【００３１】Ｙ系などのＡ−Ｂ−Ｃｕ−Ｏ系超電導薄膜
を形成する手段として、レーザ蒸着法あるいはＣＶＤ法
は、チャンバ内が完全な真空でなく若干Ｏ２分圧も確保
されること、および成膜条件も７００℃〜７５０℃で２
０分〜２時間程度であり、Ｂｉ系超電導線の最終熱処理
条件に比べると低温で短時間であることから、最終熱処
理を終えたＢｉ系超電導線の特性にあまり影響を及ぼさ
ずに高特性の複合超電導線を製造できる。[0031] As a means of forming an A-B-Cu-O system superconducting thin film such as a Y system, the laser evaporation method or the CVD method requires that the inside of the chamber is not a complete vacuum but that a slight O2 partial pressure is also secured; The film forming conditions were 700℃~750℃ 2
The time is about 0 minutes to 2 hours, which is a lower temperature and shorter time than the final heat treatment conditions for Bi-based superconducting wires, so it is possible to achieve high characteristics without affecting the properties of the Bi-based superconducting wires after the final heat treatment. Composite superconducting wire can be manufactured.
【図１】 本発明の酸化物超電導線の第１実施例を示
す斜視図である。FIG. 1 is a perspective view showing a first embodiment of an oxide superconducting wire of the present invention.
【図２】 本発明の酸化物超電導線の第２実施例を示
す断面図である。FIG. 2 is a sectional view showing a second embodiment of the oxide superconducting wire of the present invention.
【図３】 本発明の酸化物超電導線の第３実施例を示
す断面図である。FIG. 3 is a cross-sectional view showing a third embodiment of the oxide superconducting wire of the present invention.
【図４】 実験例１で作製した線材のＩｃ−Ｂ特性を
示すグラフである。4 is a graph showing the Ic-B characteristics of the wire produced in Experimental Example 1. FIG.
【図５】 実験例２で作製した線材のＩｃ−Ｂ特性を
示すグラフである。5 is a graph showing the Ic-B characteristics of the wire produced in Experimental Example 2. FIG.
【図６】 従来の超電導体の一例としてＢｉ系線材の
Ｊｃ−Ｂ特性（７７Ｋ）を示すグラフである。FIG. 6 is a graph showing the Jc-B characteristics (77K) of a Bi-based wire as an example of a conventional superconductor.
【図７】 同じくＢｉ系線材のＪｃ−Ｂ特性（４．２
Ｋ）を示すグラフである。[Figure 7] Similarly, Jc-B characteristics of Bi-based wire (4.2
It is a graph showing K).
【図８】 従来の超電導体の他の例としてＹ系薄膜の
Ｊｃ−Ｂ特性（〜１Ｔ）を示すグラフである。FIG. 8 is a graph showing the Jc-B characteristics (~1T) of a Y-based thin film as another example of a conventional superconductor.
【図９】 同じくＹ系薄膜のＪｃ−Ｂ特性（〜１０Ｔ
）を示すグラフである。[Figure 9] Similarly, Jc-B characteristics of Y-based thin film (~10T
).
１，１１，２１…酸化物超電導線、２…Ａｇシース、３
…Ｂｉ系超電導体、４…Ｂｉ系線材、５…Ａ−Ｂ−Ｃｕ
−Ｏ系超電導薄膜1, 11, 21...Oxide superconducting wire, 2...Ag sheath, 3
...Bi-based superconductor, 4...Bi-based wire, 5...A-B-Cu
-O-based superconducting thin film
【表１】[Table 1]
Claims (2)
導体が充填されたＢｉ系超電導線材の表面に、Ａ−Ｂ−
Ｃｕ−Ｏ系（ただし、ＡはＹ，Ｓｃ，Ｌａ，Ｙｂ，Ｅｒ
，Ｅｕ，Ｈｏ，Ｄｙ等の周期律表ＩＩＩａ族元素の１種
類以上を表わし、ＢはＢａ，Ｓｒ，Ｃａ等の周期律表Ｉ
Ｉａ族元素の１種類以上を表わす）超電導薄膜が成膜さ
れてなる酸化物超電導線。[Claim 1] A-B-
Cu-O system (A is Y, Sc, La, Yb, Er
, Eu, Ho, Dy, etc., and B represents one or more elements of Group IIIa of the periodic table, such as Ba, Sr, Ca, etc.
An oxide superconducting wire formed by forming a superconducting thin film (representing one or more types of Group Ia elements).
導体が充填されたＢｉ系超電導線材の表面に、レーザ蒸
着法、ＣＶＤ法などの薄膜形成手段によって、Ａ−Ｂ−
Ｃｕ−Ｏ系（ただし、ＡはＹ，Ｓｃ，Ｌａ，Ｙｂ，Ｅｒ
，Ｅｕ，Ｈｏ，Ｄｙ等の周期律表ＩＩＩａ族元素の１種
類以上を表わし、ＢはＢａ，Ｓｒ，Ｃａ等の周期律表Ｉ
Ｉａ族元素の１種類以上を表わす）超電導薄膜を成膜す
ることを特徴とする酸化物超電導線の製造方法。[Claim 2] A-B-
Cu-O system (A is Y, Sc, La, Yb, Er
, Eu, Ho, Dy, etc., and B represents one or more elements of Group IIIa of the periodic table, such as Ba, Sr, Ca, etc.
1. A method for producing an oxide superconducting wire, comprising forming a superconducting thin film (representing one or more group Ia elements).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03122329A JP3090709B2 (en) | 1991-04-24 | 1991-04-24 | Oxide superconducting wire and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03122329A JP3090709B2 (en) | 1991-04-24 | 1991-04-24 | Oxide superconducting wire and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04324209A true JPH04324209A (en) | 1992-11-13 |
| JP3090709B2 JP3090709B2 (en) | 2000-09-25 |
Family
ID=14833279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03122329A Expired - Fee Related JP3090709B2 (en) | 1991-04-24 | 1991-04-24 | Oxide superconducting wire and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3090709B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008270517A (en) * | 2007-04-20 | 2008-11-06 | Sumitomo Electric Ind Ltd | Superconducting coil and superconductor used for the same |
| US20100099571A1 (en) * | 2008-07-09 | 2010-04-22 | Bruker Hts Gmbh | Superconducting cable |
| US8185175B2 (en) * | 2007-04-17 | 2012-05-22 | Sumitomo Electric Industries, Ltd. | Superconducting coil and superconductor used for the same |
-
1991
- 1991-04-24 JP JP03122329A patent/JP3090709B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8185175B2 (en) * | 2007-04-17 | 2012-05-22 | Sumitomo Electric Industries, Ltd. | Superconducting coil and superconductor used for the same |
| JP2008270517A (en) * | 2007-04-20 | 2008-11-06 | Sumitomo Electric Ind Ltd | Superconducting coil and superconductor used for the same |
| US8565845B2 (en) * | 2007-04-20 | 2013-10-22 | Sumitomo Electric Industries, Ltd. | Superconducting coil and superconducting conductor for use therein |
| US20100099571A1 (en) * | 2008-07-09 | 2010-04-22 | Bruker Hts Gmbh | Superconducting cable |
| US8369912B2 (en) * | 2008-07-09 | 2013-02-05 | Bruker Hts Gmbh | Superconducting cable |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3090709B2 (en) | 2000-09-25 |
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