JPH0432152B2 - - Google Patents
Info
- Publication number
- JPH0432152B2 JPH0432152B2 JP60154062A JP15406285A JPH0432152B2 JP H0432152 B2 JPH0432152 B2 JP H0432152B2 JP 60154062 A JP60154062 A JP 60154062A JP 15406285 A JP15406285 A JP 15406285A JP H0432152 B2 JPH0432152 B2 JP H0432152B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- strainer
- flat plate
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 49
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 239000010408 film Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、特に凹凸構造をもつ基板の平板マグ
ネトロンスパツタに用いられる平板マグネトロン
スパツタ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a flat plate magnetron sputtering apparatus used particularly for flat plate magnetron sputtering of a substrate having an uneven structure.
［従来の技術］
マグネトロンスパツタは、一般に知られている
ように大きなターゲツト衝撃イオン電流密度を得
ることができ、ターゲツト面におけるスパツタエ
ツチング速度および基板面における成膜速度が大
きいので、生産性が高く、また低エネルギでのス
パツタができ、さらには基板への入射熱量を低く
押えることができるなどの特徴があり、広く利用
されている。[Prior Art] As is generally known, the magnetron sputter can obtain a large target impact ion current density, and the sputter etching speed on the target surface and the film formation speed on the substrate surface are high, so productivity is improved. It is widely used because of its features such as high sputtering and low energy sputtering, and the ability to keep the amount of heat incident on the substrate low.
ところで、平板マグネトロンスパツタ装置を用
いてサブミクロンの高アスペクト比（深さ／代表
径比）の凹凸構造を有する基板にスパツタ蒸着す
る場合に、凹の部分における膜厚が凸の部分にお
ける膜厚に比べて著しく薄くなる傾向がある。特
に、この傾向は代表径が1μm以下の場合に著し
い。その理由は、平板マグネトロンスパツタ装置
のスパツタ源が真空蒸着用蒸発源に比べて広い面
積をもつていることにある。すなわち、凸の部分
には広い面積のスパツタ源から斜めに入射する原
子も推積するが、凹の部分には斜め入射の成分は
到達しないためである。一般に、スパツタ原子の
方向分布は余弦法則に従つて平板スパツタ源の上
に立つ球状であり、そのエネルギ分布は数eVに
最確値をもつマクスウエル分布であることが知ら
れている。これを考慮に入れたモンテカルロ法に
よるシミユレーシヨンによつても上述の凸の部分
すなわち頂部と凹の部分すなわち底部との推積膜
厚（以下頂部と底部との推積膜厚の比を“頂底膜
厚比”と記載する）が著しく異なることが認めら
れる。従つて、広い面積のスパツタ源をもつ平板
マグネトロンスパツタ装置を用いて凹凸構造を有
する基板にスパツタ蒸着する場合に上述のように
膜厚分布が不揃いとなるのは避けられない一般的
な事実である。 By the way, when sputtering deposition is performed on a substrate having a concavo-convex structure with a high submicron aspect ratio (depth/representative diameter ratio) using a flat plate magnetron sputtering device, the film thickness in the concave parts is different from the film thickness in the convex parts. It tends to be significantly thinner than the In particular, this tendency is remarkable when the representative diameter is 1 μm or less. The reason for this is that the sputtering source of the flat plate magnetron sputtering device has a wider area than the evaporation source for vacuum deposition. That is, although atoms obliquely incident from a wide-area sputter source are also estimated to be on the convex portion, the obliquely incident component does not reach the concave portion. In general, it is known that the directional distribution of sputtering atoms follows the cosine law in the form of a sphere standing on a flat plate sputtering source, and that its energy distribution is a Maxwellian distribution with a most probable value of several eV. Taking this into consideration, simulations using the Monte Carlo method were also performed to estimate the film thickness between the above-mentioned convex portion, that is, the top, and the concave portion, that is, the bottom (hereinafter, the ratio of the estimated film thickness between the top and the bottom) It is recognized that the film thickness ratio (described as "film thickness ratio") is significantly different. Therefore, it is an unavoidable general fact that when a flat plate magnetron sputtering device with a wide-area sputtering source is used to perform sputter deposition on a substrate having an uneven structure, the film thickness distribution becomes uneven as described above. be.
一方、二極スパツタ装置において基板に対して
スパツタ原子を垂直に入射させるためターゲツト
と基板の間に基板と同じ電位のスリツトを設けて
基板に対して垂直な方向のみのスパツタ原子を基
板へ通して金属薄膜を形成するようにものが提案
されている（特公昭60−1397号公報）。 On the other hand, in a bipolar sputtering device, in order to make the sputtering atoms perpendicular to the substrate, a slit with the same potential as the substrate is provided between the target and the substrate, so that the sputtered atoms only pass in the direction perpendicular to the substrate. A method for forming a metal thin film has been proposed (Japanese Patent Publication No. 1397/1983).
しかし、この従来提案されている二極スパツタ
装置では、基板とスリツトが同電位にありしかも
ターゲツトとスリツトとの間全体に放電領域が形
成されるため、放電特性はスリツトにより実質的
に影響を受けることになる。また、スリツト自体
もプラズマにさらされることになり、スリツト自
体実質的にスパツタされてしまうことになる。そ
の結果、装置の運転に際し、動作条件を調整して
スリツトによる放電特性の変動を補正する面倒な
操作を行なわなければならず、実際の装置におい
てはフイードバツク回路等の電源制御手段を設け
る必要がある。 However, in this conventionally proposed bipolar sputtering device, the substrate and the slit are at the same potential and a discharge region is formed throughout the area between the target and the slit, so the discharge characteristics are substantially affected by the slit. It turns out. Furthermore, the slit itself is exposed to the plasma, and the slit itself is essentially sputtered. As a result, when operating the device, it is necessary to perform troublesome operations to adjust operating conditions to compensate for fluctuations in discharge characteristics due to the slit, and in actual devices, it is necessary to provide power control means such as a feedback circuit. .
また、上記の二極スパツタ装置においては、放
電特性に直接関係するアノードの一部である基板
支持体がターゲツトに対して動くため、放電形成
領域が変化し易くなり、放電インピーダンスが変
動し、放電状態は一様ではなくなり、従つてター
ゲツトのスパツタも経時的に変化することにな
り、膜厚制御が非常に難しくなるという欠点があ
る。このような理由で、二極スパツタ装置は、サ
ブミクロンの高アスペクト比（深さ／代表径比）
の凹凸構造を有する基板にスパツタ蒸着によつ
て、一様な膜厚で成膜するのには現実問題として
利用できない。 In addition, in the above-mentioned bipolar sputtering device, the substrate support, which is a part of the anode that is directly related to the discharge characteristics, moves relative to the target, so the discharge formation area tends to change, the discharge impedance fluctuates, and the discharge The disadvantage is that the condition is not uniform and therefore the spatter on the target changes over time, making it very difficult to control the film thickness. For this reason, bipolar sputtering equipment has a high aspect ratio (depth/representative diameter ratio) of submicrons.
As a practical matter, it cannot be used to form a film with a uniform thickness on a substrate having an uneven structure by sputter deposition.
［発明が解決しようとする問題点］
ところで、平板マグネトロンスパツタ装置は、
上述のようにサブミクロンの高アスペクト比（深
さ／代表径比）の凹凸構造を有する基板にスパツ
タ蒸着する場合に、凹の部分における膜厚が凸の
部分における膜厚に比べて著しく薄くなり、一様
な膜厚で成膜することは困難であるが、凹凸構造
を有する基板の平板マグネトロンスパツタにおい
て、基板の凹凸の部分の代表径ｄと凹に部分の深
さ１とが共にμmの単位で測られる寸法であつて
しかもｄが1μmないしはそれ以下の寸法であるよ
うな場合に、“頂底膜厚化”を１にできるだけ近
づけることが必要となつてきている。[Problems to be solved by the invention] By the way, the flat plate magnetron sputtering device has the following problems:
As mentioned above, when sputtering deposition is performed on a substrate with a concavo-convex structure with a high submicron aspect ratio (depth/representative diameter ratio), the film thickness in the concave areas becomes significantly thinner than that in the convex areas. Although it is difficult to form a film with a uniform thickness, in flat magnetron sputtering of a substrate with an uneven structure, both the representative diameter d of the uneven part of the substrate and the depth 1 of the concave part are μm. It has become necessary to bring the "top-basal film thickness" as close to 1 as possible in cases where d is measured in units of 1 μm or less.
そこで、本発明の目的は、上述のような凹凸構
造を有する基板の平板マグネトロンスパツタにお
いて、一様な膜厚すなわち“頂底膜厚化”１で成
膜することができるようにした平板マグネトロン
スパツタ装置を提供することにある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a flat magnetron sputtering method for a substrate having an uneven structure as described above, which can form a film with a uniform film thickness, that is, "top-to-bottom film thickening"1. An object of the present invention is to provide a sputtering device.
［課題を解決するための手段］
上記の目的を達成するために、本発明による平
板マグネトロンスパツタ装置は、ターゲツト及び
ターゲツト表面上に磁場を形成するマグネツトを
設けた平板カソード組立体と上記ターゲツトに対
向して設けられ、基板の取り付けられるアノード
との間で上記マグネツトによる磁場の働きでター
ゲツトの近傍に制限される主放電領域から離れた
位置に、上記ターゲツトからのスパツタ原子のう
ち基板にほぼ垂直な方向をもつもののみを通すス
トレーナを基板に沿つて可動に設けたことを特徴
としている。[Means for Solving the Problems] In order to achieve the above object, a flat plate magnetron sputtering apparatus according to the present invention includes a flat plate cathode assembly provided with a target and a magnet for forming a magnetic field on the surface of the target, and a flat plate cathode assembly provided with a target and a magnet for forming a magnetic field on the surface of the target. Between the anode, which is provided facing the substrate, and which is attached to the substrate, the spatter atoms from the target are placed at a position away from the main discharge region, which is limited to the vicinity of the target by the action of the magnetic field from the magnet, and are approximately perpendicular to the substrate. It is characterized by a strainer that is movable along the substrate, allowing only objects in a certain direction to pass through.
ストレーナは好ましくは基板に沿つて往復動ま
たは回転運動するように構成され得る。 The strainer may preferably be configured for reciprocating or rotational movement along the substrate.
［作用］
このように構成したことによつて、本発明によ
る平板マグネトロンスパツタ装置においては、タ
ーゲツト面から斜めに飛び出したスパツタ原子は
中空殻構造のストレーナを通過する際にストレー
ナ壁に衝突し、従つて基板には入射しない。この
場合、ストレーナに印加する電位は、基板電位と
同じ電位でもあるいは基板電位に対して適当に正
または負であつてもよい。さらに、必要ならば、
適当なDCまたはRF電圧をストレーナに印加して
基板における成膜状態を制御することも可能であ
る。[Function] With this configuration, in the flat plate magnetron sputtering device according to the present invention, sputter atoms flying out diagonally from the target surface collide with the strainer wall when passing through the strainer having a hollow shell structure. Therefore, it does not enter the substrate. In this case, the potential applied to the strainer may be the same potential as the substrate potential, or may be appropriately positive or negative with respect to the substrate potential. Furthermore, if necessary,
It is also possible to control the deposition state on the substrate by applying an appropriate DC or RF voltage to the strainer.
［実施例］
以下、添付図面を参照して本発明の実施例につ
いて説明する。[Embodiments] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図には本発明の一実施例を示し、１は平板
カソード組立体を既略的に示し、この例では平板
カソード組立体１にはターゲツトが一体的に構成
されている。なお、図面には示してないが、カソ
ード本体１にはまたターゲツト表面上に磁場を形
成するマグネツトが設けられ、このマグネツトに
よつて形成される磁場の働きで主放電領域はター
ゲツトの近傍に制限されている。すなわち、グロ
ー放電を起こさせることによつて始まつた放電は
マグネツトによつて形成されるターゲツト表面上
の磁場内に閉じこめられる。 FIG. 1 shows an embodiment of the present invention, in which 1 schematically shows a flat plate cathode assembly, and in this example, the flat plate cathode assembly 1 has a target integrally formed therein. Although not shown in the drawing, the cathode body 1 is also provided with a magnet that forms a magnetic field on the target surface, and the main discharge area is limited to the vicinity of the target by the action of the magnetic field formed by this magnet. has been done. That is, the discharge started by causing a glow discharge is confined within the magnetic field on the target surface formed by the magnet.
ターゲツトに対向してアノード２上には基板３
が取付けられている。ターゲツトとアノード２上
の基板３との間でターゲツトの近傍に形成される
主放電領域から離れた位置には図示したように、
高さＬ、代表軽Ｄの中空殻構造をもつストレーナ
４がカソード組立体１に平行に配置されている。 A substrate 3 is placed on the anode 2 facing the target.
is installed. As shown in the figure, at a position away from the main discharge region formed near the target between the target and the substrate 3 on the anode 2,
A strainer 4 having a hollow shell structure with a height L and a typical light weight D is arranged parallel to the cathode assembly 1.
ここで、ターゲツトとアノード２上の基板３と
の間の距離をＳとし、ターゲツトとストレーナ４
の一端との間の距離をS11とし、また基板３とス
トレーナ４の他端との間の距離をS22とすると、
ターゲツトと基板３とが平行である場合には、Ｓ
＝S11＋S22＋Ｌであるが、ターゲツトと基板３と
が平行でない場合、例えば基板３が曲面であつた
り、斜めに傾いていて自転しているなどの場合に
は、Ｓをターゲツトとアノード２上の基板３との
間の代表距離とする。 Here, the distance between the target and the substrate 3 on the anode 2 is S, and the distance between the target and the strainer 4 is
If the distance between the substrate 3 and the other end of the strainer 4 is S 11 , and the distance between the substrate 3 and the other end of the strainer 4 is S 22 ,
When the target and substrate 3 are parallel, S
=S 11 +S 22 +L. However, if the target and the substrate 3 are not parallel, for example, if the substrate 3 is curved or tilted and rotating, S is the target and the anode 2. This is the representative distance from the upper substrate 3.
ここで、“頂底膜厚比”を１にできるだけ近づ
けるためにはストレーナ４の高さＬと代表径Ｄと
の比Ｌ／Ｄを最適な値に設定する必要があり、比
Ｌ／Ｄをゼロに近ずけると通常に平板マグネトロ
ンスパツタ蒸着となつてしまい、一方、Ｌ／Ｄ＝
∞とすると、各穴に一杯詰物をしたものを置いた
ことに相当するので、基板に成膜ができなくなつ
てしまう。従つて、実際上は、0.1≦Ｌ／Ｄ≦10
の範囲で選ばれる。また距離S11および距離S22は
それぞれ、０＜S11≦Ｓ−Ｌ、０≦S22≦Ｓ−Ｌの
範囲で選ばれる。 Here, in order to bring the "top-to-bottom film thickness ratio" as close to 1 as possible, it is necessary to set the ratio L/D between the height L and the representative diameter D of the strainer 4 to an optimal value. If it approaches zero, it will become normal flat plate magnetron sputter deposition, while L/D=
If it is ∞, this corresponds to placing something completely filled in each hole, which makes it impossible to form a film on the substrate. Therefore, in practice, 0.1≦L/D≦10
selected within the range. Further, the distance S 11 and the distance S 22 are respectively selected in the range of 0<S 11 ≦SL and 0≦S 22 ≦SL.
なお、図示実施例では、ストレーナ４はターゲ
ツトとアノード２上の基板３との間のほぼ中間に
すなわちS11およびS22をそれぞれ適当な距離に選
んで配置されているが、距離S22をゼロ近くに選
んでストレーナをアノードの上の基板に沿つて適
当な駆動手段により往復動または回転運動させる
ように構成してもよい。 In the illustrated embodiment, the strainer 4 is arranged approximately midway between the target and the substrate 3 on the anode 2, that is, with S 11 and S 22 selected at appropriate distances, but the distance S 22 is set to zero. The strainer may be selected close to the anode and arranged for reciprocating or rotational movement along the substrate above the anode by suitable drive means.
本発明において用いられ得るストレーナの幾つ
かの例を第２〜５図に示す。第２図に示すストレ
ーナは中空円筒をハニカム状に組合せたものから
成つており、第３図には中空六角筒をハニカム状
に組合せたものが示されており、第４図には中空
四角筒をハニカム状に組合せたものが示されてお
り、また第５図には中空三角筒をハニカム状に組
合せたものが示されている。なお、必要ならば、
ストレーナとして他の任意の中空筒ハニカム状の
ものを用いることができる。 Some examples of strainers that may be used in the present invention are shown in Figures 2-5. The strainer shown in Figure 2 consists of hollow cylinders combined in a honeycomb shape, Figure 3 shows a strainer in which hollow hexagonal cylinders are combined in a honeycomb shape, and Figure 4 shows a strainer made of hollow square cylinders combined in a honeycomb shape. Fig. 5 shows a combination of hollow triangular tubes in a honeycomb shape. Furthermore, if necessary,
Any other hollow cylinder honeycomb type strainer can be used as the strainer.
［発明の効果］
以上説明してきたように、本発明においては、
ターゲツトの取り付けられるカソード組立体と上
記ターゲツトに対向して設けられ基板の取り付け
られるアノードとの間でターゲツトの近傍に形成
される主放電領域から離れた位置に、上記ターゲ
ツトからのスパツタ原子のうち基板にほぼ垂直な
方向をもつもののみを通すストレーナを基板に沿
つて可動に設けているので、スパツタ装置の放電
特性に実質的に影響を与えることがないだけでな
く、ストレーナ自体のスパツタリングが避けら
れ、ストレーナ物質が基板上に形成される膜に混
入することを避けることができ、またストレーナ
が放電領域にかかつていないので、電源系統の制
御（電圧や電流を一定に保つこと）が容易でしか
も簡単となる。その結果、成膜の歩留まりがよく
なるだけでなく、ストレーナの交換頻度も大幅に
低くすることができるようになる。このことは、
平板マグネトロンスパツタ装置自体のもつ成膜速
度の高いことと相俟つてサブミクロンの高アスペ
クト比（深さ／代表径比）の凹凸構造をもつ基板
にスパツタ蒸着する場合でも、凹の部分および凸
の部分を一様な膜厚で成膜することができること
を意味し、これにより、ターゲツト面におけるス
パツタエツチング速度および基板面における成膜
速度が大きく、低エネルギのスパツタができ、ま
た基板への入射熱量を低く押えることができるな
どのマグネトロンスパツタの特徴を生かして凹凸
構造を有する基板を一様な膜厚で効率よく成膜す
ることができるようになる。[Effect of the invention] As explained above, in the present invention,
Among the spatter atoms from the target, a substrate is located at a position away from the main discharge region formed near the target between the cathode assembly to which the target is attached and the anode, which is provided opposite to the target and to which the substrate is attached. Since the strainer is movable along the substrate and only allows passage of material in a direction approximately perpendicular to the direction of In addition, since the strainer material is not mixed into the film formed on the substrate, and the strainer is not present in the discharge area, it is easy to control the power supply system (keep the voltage and current constant). It becomes easy. As a result, not only the yield of film formation is improved, but also the frequency of replacing the strainer can be significantly reduced. This means that
Coupled with the high film formation rate of the flat plate magnetron sputtering device itself, even when sputtering deposition is performed on a substrate with a concavo-convex structure with a high submicron aspect ratio (depth/representative diameter ratio), concave and convex portions are This means that the sputter etching speed on the target surface and the film formation speed on the substrate surface are high, low-energy sputtering is possible, and the sputter etching speed on the substrate is high. Taking advantage of the characteristics of magnetron sputtering, such as the ability to suppress the amount of incident heat, it becomes possible to efficiently form a film with a uniform thickness on a substrate having an uneven structure.
第１図は本発明の平板マグネトロンスパツタ装
置の要部の構成を示す既略断面図、第２図、第３
図、第４図及び第５図はそれぞれ本発明の平板マ
グネトロンスパツタ装置に用いられる異なつたス
トレーナを示す平面図である。
図中、１……カソード組立体、２……アノー
ド、３……基板、４……ストレーナ。
FIG. 1 is a schematic sectional view showing the configuration of the main parts of the flat plate magnetron sputtering device of the present invention, FIG.
4 and 5 are plan views showing different strainers used in the flat magnetron sputtering apparatus of the present invention, respectively. In the figure, 1... cathode assembly, 2... anode, 3... substrate, 4... strainer.
Claims (1)
成するマグネツトを設けた平板カソード組立体と
上記ターゲツトに対向して設けられ、基板の取り
付けられるアノードとの間で上記マグネツトによ
る磁場の働きでターゲツトの近傍に制限される主
放電領域から離れた位置に、上記ターゲツトから
のスパツタ原子のうち基板にほぼ垂直な方向をも
つもののみを通すストレーナを基板に沿つて可動
に設けたことを特徴とする平板マグネトロンスパ
ツタ装置。 ２ ストレーナが中空殻構造である特許請求の範
囲第１項に記載の平板マグネトロンスパツタ装
置。[Scope of Claims] 1. A flat plate cathode assembly provided with a target and a magnet for forming a magnetic field on the surface of the target, and an anode provided opposite to the target and to which a substrate is attached, by the action of the magnetic field by the magnet. A strainer is movably provided along the substrate at a position away from the main discharge area which is limited to the vicinity of the target, through which only spatter atoms from the target that are oriented approximately perpendicular to the substrate pass through. Flat plate magnetron sputtering device. 2. The flat plate magnetron sputtering device according to claim 1, wherein the strainer has a hollow shell structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15406285A JPS6217173A (en) | 1985-07-15 | 1985-07-15 | Flat plate magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15406285A JPS6217173A (en) | 1985-07-15 | 1985-07-15 | Flat plate magnetron sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6217173A JPS6217173A (en) | 1987-01-26 |
| JPH0432152B2 true JPH0432152B2 (en) | 1992-05-28 |
Family
ID=15576067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15406285A Granted JPS6217173A (en) | 1985-07-15 | 1985-07-15 | Flat plate magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6217173A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0660391B2 (en) * | 1987-06-11 | 1994-08-10 | 日電アネルバ株式会社 | Sputtering equipment |
| US5133849A (en) * | 1988-12-12 | 1992-07-28 | Ricoh Company, Ltd. | Thin film forming apparatus |
| US5635036A (en) * | 1990-01-26 | 1997-06-03 | Varian Associates, Inc. | Collimated deposition apparatus and method |
| US6521106B1 (en) * | 1990-01-29 | 2003-02-18 | Novellus Systems, Inc. | Collimated deposition apparatus |
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| JP2725944B2 (en) * | 1991-04-19 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Metal layer deposition method |
| JPH04371578A (en) * | 1991-06-19 | 1992-12-24 | Sony Corp | Magnetron sputtering device |
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| JP2755138B2 (en) * | 1993-12-15 | 1998-05-20 | 日本電気株式会社 | Sputtering equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS601397A (en) * | 1983-06-17 | 1985-01-07 | Toyoda Autom Loom Works Ltd | Compressor of variable compression capacity type |
-
1985
- 1985-07-15 JP JP15406285A patent/JPS6217173A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS601397A (en) * | 1983-06-17 | 1985-01-07 | Toyoda Autom Loom Works Ltd | Compressor of variable compression capacity type |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217173A (en) | 1987-01-26 |
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