JPH04318525A - Reflection type electrochromic element - Google Patents
Reflection type electrochromic elementInfo
- Publication number
- JPH04318525A JPH04318525A JP3110724A JP11072491A JPH04318525A JP H04318525 A JPH04318525 A JP H04318525A JP 3110724 A JP3110724 A JP 3110724A JP 11072491 A JP11072491 A JP 11072491A JP H04318525 A JPH04318525 A JP H04318525A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- film
- reflective
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052709 silver Inorganic materials 0.000 claims abstract description 24
- 239000004332 silver Substances 0.000 claims abstract description 24
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 23
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052741 iridium Inorganic materials 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000010828 elution Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000002356 single layer Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000004040 coloring Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、例えば防眩ミラー等に
使用される反射率を向上させた反射型エレクトロクロミ
ック素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective electrochromic element with improved reflectance used, for example, in anti-glare mirrors.
【０００２】0002
【従来の技術】電圧を印加すると可逆的に電解酸化もし
くは還元反応が起こり、可逆的に着色（発色）する現象
をエレクトロクロミズムと言う。このような現象を示す
エレクトロクロミック（以下ＥＣと略称する）物質の薄
膜を透明又は不透明からなる一対の電極層で挟持して、
その電極層間に印加する電圧操作することにより、着消
色するデバイスをＥＣ素子と言う。BACKGROUND OF THE INVENTION When a voltage is applied, electrolytic oxidation or reduction reactions occur reversibly, and the phenomenon of reversible coloring (coloring) is called electrochromism. A thin film of an electrochromic (hereinafter abbreviated as EC) substance that exhibits this phenomenon is sandwiched between a pair of transparent or opaque electrode layers,
A device that changes color or fades by controlling the voltage applied between the electrode layers is called an EC element.
【０００３】尚、このＥＣ素子とは、具体的にはＥＣ物
質の単層、ＥＣ物質の単層とイオン導電層との２層、還
元発色性ＥＣ物質の単層と電解酸化（発色）性薄膜との
２層、還元発色性ＥＣ物質の単層とイオン導電層と電解
酸化（発色）性薄膜との３層のいずれかを示す。[0003]This EC element specifically includes a single layer of an EC material, a double layer of an EC material and an ion conductive layer, a single layer of a reduction coloring EC material and an electrolytically oxidizing (coloring) material. Either two layers with a thin film, or three layers with a single layer of a reduction color-forming EC substance, an ion conductive layer, and an electrolytically oxidized (color-forming) thin film are shown.
【０００４】具体的に、透明電極の材料としては、例え
ば、ＳｎＯ２，Ｉｎ２Ｏ３，ＩＴＯなどが使用される。
不透明な電極層は、反射層と兼用してもよく、例えば、
金，銀，アルミニウム，クロム，スズ，亜鉛，ニッケル
，ルテニウム，ロジウム，ステンレスなどの金属が使用
される。[0004] Specifically, as the material of the transparent electrode, for example, SnO2, In2O3, ITO, etc. are used. The opaque electrode layer may also serve as a reflective layer, for example,
Metals such as gold, silver, aluminum, chromium, tin, zinc, nickel, ruthenium, rhodium, and stainless steel are used.
【０００５】また、イオン導電層としては、例えば、酸
化ケイ素，酸化タンタル，酸化チタン，酸化アルニミウ
ム，酸化ニオブ，酸化ジルコニウム，酸化ハフニウム，
酸化ランタン，フッ化マグネシウムなどが使用される。
更に、還元発色性ＥＣ物質としては、一般にＷＯ３，Ｍ
ｏＯ３などが使用される。[0005] Examples of the ion conductive layer include silicon oxide, tantalum oxide, titanium oxide, aluminum oxide, niobium oxide, zirconium oxide, hafnium oxide,
Lanthanum oxide, magnesium fluoride, etc. are used. Furthermore, as reduction color-forming EC substances, WO3, M
oO3 etc. are used.
【０００６】更にまた、電解酸化（発色）性薄膜として
は、例えば、酸化ないし水酸化イリジウム，同じくニッ
ケル，同じくクロム，同じくバナジウム，同じくルテニ
ウム，同じくロジウムなどが使用される。また、この中
に導電性物質、例えば、ＳｎＯ２，Ｉｎ２Ｏ３などを混
合してもよい。Furthermore, as the electrolytic oxidation (coloring) thin film, for example, iridium oxide or hydroxide, nickel, chromium, vanadium, ruthenium, rhodium, etc. are used. Further, a conductive substance such as SnO2, In2O3, etc. may be mixed therein.
【０００７】このＥＣ素子を光量制御素子（例えば防眩
ミラー）や７セグメントを利用した数字表示素子に利用
しようとする試みは、２０年以上前から行なわれている
。Attempts have been made for more than 20 years to utilize this EC element in a light amount control element (for example, an anti-glare mirror) or a numeric display element using seven segments.
【０００８】図２は従来の防眩ミラーの構造を示す断面
図である。図に示す通り、ガラス基板１１上に透明電極
層（約２０００Å）を成膜し、下部電極取り出し部１２
と上部電極取り出し部１３にエッチング等の手法で分離
する。その上にＥＣ層であるイリジウムと酸化スズの混
合膜（約１０００Å）１４と、５酸化タンタル膜（約５
０００Å）１５と、３酸化タングステン（約５０００Å
）１６とを連続して成膜する。更に、その上に反射性電
極層としてアルミ膜（約１０００Å）１７を成膜する。
以上が従来の防眩ミラーの構造である。FIG. 2 is a sectional view showing the structure of a conventional anti-glare mirror. As shown in the figure, a transparent electrode layer (approximately 2000 Å) is formed on a glass substrate 11, and a lower electrode extraction portion 12 is formed.
and the upper electrode extraction portion 13 are separated by a method such as etching. On top of that is an EC layer of a mixed film of iridium and tin oxide (approximately 1000 Å) 14 and a tantalum pentoxide film (approx.
000 Å) 15 and tungsten trioxide (approximately 5000 Å) 15
) 16 are successively formed. Further, an aluminum film (approximately 1000 Å) 17 is formed thereon as a reflective electrode layer. The above is the structure of the conventional anti-glare mirror.
【０００９】[0009]
【発明が解決しようとする課題】このような反射性電極
層としてアルミを用いた反射型ＥＣ素子は、現在製品に
なっているものの、反射率変化が消色時で５５％、着色
時で１２％であり、反射率変化幅が小さい。そのため、
消色反射率を高めると同時に反射率変化幅を大きくした
いとの要求があった。[Problems to be Solved by the Invention] Although such reflective EC elements using aluminum as the reflective electrode layer are currently commercially available, the change in reflectance is 55% when decolored and 12% when colored. %, and the range of change in reflectance is small. Therefore,
There was a demand for increasing the decolorizing reflectance and at the same time widening the reflectance variation range.
【００１０】そこで、ＥＣ層である酸化スズとイリジウ
ムの混合膜は吸収膜である。そこでその膜の成膜法や各
成分の含有量等を改良して反射率を高める検討を種々行
ったが、消色反射率が６５％が限度であった。また、反
射性電極層をアルミから、より反射率の高い銀に変更す
る試みもあったが、銀膜ではＥＣ層（特に、３酸化タン
グステン層）に銀が拡散・溶出して、安定なＥＣ素子が
できなかった。[0010] Therefore, the mixed film of tin oxide and iridium, which is the EC layer, is an absorbing film. Therefore, various studies were conducted to improve the film formation method and the content of each component to increase the reflectance, but the decolorizing reflectance was limited to 65%. There was also an attempt to change the reflective electrode layer from aluminum to silver, which has a higher reflectance, but with silver films, silver diffuses and dissolves into the EC layer (particularly the tungsten trioxide layer), resulting in stable EC. Motoko could not do it.
【００１１】本発明は、消色反射率を高めると同時に反
射率変化幅を大きくした反射型ＥＣ素子を得ることを目
的とする。An object of the present invention is to obtain a reflective EC element which has a high decolorizing reflectance and at the same time a wide reflectance change range.
【００１２】0012
【課題を解決するための手段】本請求項１に記載の発明
に係る反射型ＥＣ素子では、第１の透明電極層とＥＣ層
と「銀を含む反射性電極層」とを順に備えた反射型ＥＣ
素子において、前記ＥＣ層と反射性電極層との間に第２
の透明電極層を備えたものである。[Means for Solving the Problems] A reflective EC element according to the invention according to claim 1 is provided with a reflective EC element comprising a first transparent electrode layer, an EC layer, and a "reflective electrode layer containing silver" in this order. Type EC
In the device, a second layer is provided between the EC layer and the reflective electrode layer.
It is equipped with a transparent electrode layer.
【００１３】また、具体的な第２の透明電極層としては
、ＳｎＯ２， Ｉｎ２Ｏ３ 又はＩＴＯ より選ばれた
ものであることを開示するものである。[0013] Further, it is disclosed that the second transparent electrode layer is specifically selected from SnO2, In2O3, or ITO.
【００１４】[0014]
【作用】本発明においては、ＥＣ層と反射性電極層との
間に第２の透明電極層を備えたものであり、ＥＣ層と「
銀を含む反射性電極層」との間に透明電極層が加わった
ので、銀のＥＣ層への拡散、溶出を防ぐことができ、更
に銀の持つ高反射を生かすことができるようになった。
反射層としての銀は、従来のアルミと比較して高い反射
率を持ち、しかもＥＣ素子の着色時にはＥＣ素子の光の
吸収により反射率の上昇が抑えられ、結果として反射率
変化幅を大きくすることが可能となる。従って、消色反
射率を高めると同時に反射率変化幅が大きく、安定な反
射型ＥＣ素子を得ることができる。[Function] In the present invention, a second transparent electrode layer is provided between the EC layer and the reflective electrode layer.
By adding a transparent electrode layer between the EC layer and the "reflective electrode layer containing silver," it is possible to prevent silver from diffusing and eluting into the EC layer, and it is now possible to take advantage of the high reflectivity of silver. . Silver as a reflective layer has a higher reflectance than conventional aluminum, and when the EC element is colored, the increase in reflectance is suppressed by the absorption of light by the EC element, resulting in a wider range of change in reflectance. becomes possible. Therefore, it is possible to obtain a stable reflective EC element that has a large range of change in reflectance while increasing the decolorizing reflectance.
【００１５】尚、本発明の第２の透明電極層及び「銀を
含む反射性電極層」を形成する反射型ＥＣ素子は、ＥＣ
物質の単層、ＥＣ物質の単層とイオン導電層との２層、
還元発色性ＥＣ物質の単層と電解酸化（発色）性薄膜と
の２層、還元発色性ＥＣ物質の単層とイオン導電層と電
解酸化（発色）性薄膜との３層のいずれでも、反射性電
極層に含まれる銀のＥＣ層への拡散・溶出を防ぐことが
できる。[0015] The reflective EC element forming the second transparent electrode layer and the "reflective electrode layer containing silver" of the present invention is
A single layer of material, two layers of a single layer of EC material and an ion conductive layer,
Both a single layer of a reduction color-forming EC material and an electrolytically oxidized (color-forming) thin film, or a triple layer of a single layer of a reduction color-forming EC material, an ion conductive layer, and an electrolytically oxidized (color-forming) thin film can be used for reflection. Diffusion and elution of silver contained in the polar electrode layer into the EC layer can be prevented.
【００１６】また、第２の透明電極層は、導電性且つ透
明であり、ＥＣ層及び銀膜とに拡散・溶出しなければよ
く、具体的にＳｎＯ２，Ｉｎ２Ｏ３，ＩＴＯが使用でき
る。また、層の厚さは、銀膜とＥＣ層との接触を確実に
阻害できる厚さであればよく、前述のＳｎＯ２，Ｉｎ２
Ｏ３，ＩＴＯの場合では、好ましくは ５００〜２００
０Åである。Further, the second transparent electrode layer is conductive and transparent, and does not need to be diffused or eluted into the EC layer and the silver film, and specifically SnO2, In2O3, and ITO can be used. Further, the thickness of the layer may be any thickness that can reliably prevent contact between the silver film and the EC layer, and the thickness of the above-mentioned SnO2, In2
In the case of O3, ITO, preferably 500 to 200
It is 0 Å.
【００１７】尚、後述する実施例では、酸化スズとイリ
ジウムの混合膜を、より透明に成膜し、さらにＥＣ層成
膜後直ちに透明導電膜（約１０００Å）を成膜し、その
上に反射性電極膜として銀膜を約１０００Å成膜するこ
ととした。従って、ＥＣ層成膜後に真空が破られないた
め、比較的弱い膜であるＷＯ３ に水分が吸着すること
がなく、従来この水分によって生じていたクラックが発
生し難くなる。また、大気開放後に付着していたゴミの
付着もなくなり、ＥＣ素子の不良も格段に減るという効
果もある。In the examples described later, a mixed film of tin oxide and iridium is formed to be more transparent, and then a transparent conductive film (approximately 1000 Å) is formed immediately after the EC layer is formed, and a reflective film is formed on it. A silver film having a thickness of about 1000 Å was formed as a polar electrode film. Therefore, since the vacuum is not broken after the EC layer is formed, moisture is not adsorbed to WO3, which is a relatively weak film, and cracks, which conventionally occur due to moisture, are less likely to occur. Further, there is also the effect that the adhesion of dust that had been attached after being exposed to the atmosphere is eliminated, and the number of defects in EC elements is significantly reduced.
【００１８】[0018]
【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明はこれに限定されるものではない。[Examples] The present invention will be specifically explained below with reference to Examples, but the present invention is not limited thereto.
【００１９】図１は本発明の一実施例の構成を示す反射
型ＥＣ素子の断面図である。図に示す通り、反射型ＥＣ
素子は、基板２１の上に下部電極層２２（第１の透明電
極層）と上部電極取り出し部２３が形成されており、下
部電極層２２の上にＥＣ層と呼ばれる酸化スズとイリジ
ウムの混合膜２４と、５酸化タンタル膜１５と、３酸化
タングステン１６と、更に第２の透明電極膜２８とが形
成されている。更にその上に「銀を含む反射性電極層」
２７が上部電極取り出し部２３に導通して形成されてい
る。FIG. 1 is a sectional view of a reflective EC element showing the configuration of an embodiment of the present invention. As shown in the figure, reflective EC
The device includes a lower electrode layer 22 (first transparent electrode layer) and an upper electrode extraction portion 23 formed on a substrate 21, and a mixed film of tin oxide and iridium called an EC layer on the lower electrode layer 22. 24, a tantalum pentoxide film 15, a tungsten trioxide film 16, and a second transparent electrode film 28. Furthermore, on top of that is a "reflective electrode layer containing silver."
27 is formed to be electrically connected to the upper electrode extraction portion 23.
【００２０】具体的な反射型ＥＣ素子の作成は次のよう
に行った。縦８０ｍｍ×横１５０ｍｍ×厚さ２ｍｍのガ
ラス基板２１に下部電極層としてＩＴＯを基板温度３０
０℃、酸素ガスが２×１０−４ｔｏｒｒの雰囲気中でＲ
Ｆパワー１５０Ｗで約２Å／ｓｅｃの成膜速度で１５分
成膜して第１の透明電極層（約２０００Å）を得た。基
板２１を取り出しエッチングによって、このＩＴＯ膜を
下部電極層２２と上部電極取り出し部２３に分離した。A specific reflective EC element was prepared as follows. ITO was applied as a lower electrode layer to a glass substrate 21 measuring 80 mm long x 150 mm wide x 2 mm thick at a substrate temperature of 30 mm.
R in an atmosphere of 0°C and oxygen gas of 2 x 10-4 torr
A first transparent electrode layer (about 2000 Å) was obtained by forming a film for 15 minutes at an F power of 150 W and a film forming rate of about 2 Å/sec. The substrate 21 was taken out and the ITO film was separated into a lower electrode layer 22 and an upper electrode extraction portion 23 by etching.
【００２１】次にＥＣ層を成膜した。尚、基板温度は８
０℃とした。ＥＣ第１層は酸化スズとイリジウムとの混
合膜２４で、酸素ガス４×１０−４ｔｏｒｒの雰囲気中
でＲＦパワー１００Ｗで約１Å／ｓｅｃの成膜速度で１
６分成膜して混合膜２４（約１０００Å）を得た。ＥＣ
第２層は５酸化タンタル膜２５で、酸素ガス４×１０−
４ｔｏｒｒの雰囲気中でＲＦパワー４００Ｗで約６Å／
ｓｅｃの成膜速度で１４分成膜して５酸化タンタル膜２
５（約５０００Å）を得た。ＥＣ第３層は３酸化タング
ステン膜２６で酸素ガス４×１０−４ｔｏｒｒの雰囲気
中で約７Å／ｓｅｃの成膜速度で１２分成膜して３酸化
タングステン膜２６（約５０００Å）を得た。Next, an EC layer was formed. In addition, the substrate temperature is 8
The temperature was 0°C. The first EC layer is a mixed film 24 of tin oxide and iridium, which is deposited at a deposition rate of about 1 Å/sec with RF power of 100 W in an oxygen gas atmosphere of 4 x 10-4 torr.
A mixed film 24 (approximately 1000 Å) was obtained by forming a film for 6 minutes. EC
The second layer is a tantalum pentoxide film 25, with oxygen gas 4×10−
Approximately 6Å/at RF power of 400W in a 4torr atmosphere
Tantalum pentoxide film 2 was deposited for 14 minutes at a deposition rate of sec.
5 (approximately 5000 Å) was obtained. The third EC layer was a tungsten trioxide film 26 which was formed in an oxygen gas atmosphere of 4.times.10@-4 torr at a deposition rate of about 7 .ANG./sec for 12 minutes to obtain a tungsten trioxide film 26 (about 5000 .ANG.).
【００２２】更に、基板温度を２００℃に加熱してＩＴ
Ｏを酸素ガス２×１０−４ｔｏｒｒの雰囲気中でＲＦパ
ワー１５０Ｗで約２Å／ｓｅｃの成膜速度で８分成膜し
て第２の透明電極膜２８（約１０００Å）を得た。ここ
で基板を取り出しマスクを取り換え、上部電極層として
Ａｇを基板温度室温，１×１０−５ｔｏｒｒ以下の雰囲
気で約５Å／ｓｅｃで成膜して「銀を含む反射性電極層
」２７（約１０００Å）を形成し、ＥＣ素子を作製した
。Furthermore, by heating the substrate temperature to 200°C, the IT
A second transparent electrode film 28 (about 1000 Å) was obtained by forming an O film in an oxygen gas atmosphere of 2×10 −4 torr with RF power of 150 W at a film forming rate of about 2 Å/sec for 8 minutes. At this point, the substrate was removed, the mask was replaced, and an Ag film was formed as an upper electrode layer at a rate of about 5 Å/sec at a substrate temperature of room temperature and an atmosphere of 1×10-5 torr or less. ) was formed to produce an EC element.
【００２３】更に、得られたＥＣ素子の保護のため、素
子をエポキシ樹脂で封止した。この素子を初期化し視感
反射率を測定したところ、消色時で７２％、着色時（１
．３５Ｖ）で１０％であった。更に、±１．３５Ｖ，２
０ｓｅｃ／ｃｙｃｌｅで１００ｈｒ連続駆動したが、素
子の劣化は認められなかった。なお、上述のＥＣ層であ
る酸化スズとＩｒの混合膜２４と、５酸化タンタル膜２
５と、３酸化タングステン２６とは逆の順でもよい。Furthermore, in order to protect the obtained EC device, the device was sealed with epoxy resin. When this element was initialized and the luminous reflectance was measured, it was 72% when decolored and 1% when colored (1
．． 35V), it was 10%. Furthermore, ±1.35V, 2
Although the device was continuously driven for 100 hours at 0 sec/cycle, no deterioration of the device was observed. Note that the mixed film 24 of tin oxide and Ir, which is the above-mentioned EC layer, and the tantalum pentoxide film 2
5 and tungsten trioxide 26 may be in the reverse order.
【００２４】[0024]
【発明の効果】以上のように、ＥＣ層と「銀を含む反射
性電極層」との間に第２の透明電極層を備えたものであ
るため、銀のＥＣ層への拡散、溶出を防ぐことができ、
銀の持つ高反射も生かすことができるようになった。従
って、この構造にすることにより、消色時に高反射で安
定な反射型ＥＣ素子を得ることができる等の効果を有す
る。Effects of the Invention As described above, since the second transparent electrode layer is provided between the EC layer and the "reflective electrode layer containing silver", diffusion and elution of silver into the EC layer can be prevented. can be prevented,
It is now possible to take advantage of the high reflectivity of silver. Therefore, by adopting this structure, it is possible to obtain a reflective EC element that has high reflection and is stable during decolorization.
【図１】本発明の一実施例の構成を示す反射型ＥＣ素子
の断面図である。FIG. 1 is a sectional view of a reflective EC element showing the configuration of an embodiment of the present invention.
【図２】従来の反射型ＥＣ素子の構成を示す断面図であ
る。FIG. 2 is a cross-sectional view showing the configuration of a conventional reflective EC element.
１１，２１ ガラス基板
１２，２２ 下部電極層
１３，２３ 上部電極取り出し部
１４，２４ Ｉｒ／ＳｎＯ２ 混合膜１５，２５
５酸化タンタル膜
１６，２６ ３酸化タングステン膜
１７ 反射性電極層
２７ 「銀を含む反射性電極層」
２８ 第２透明電極層11, 21 Glass substrate 12, 22 Lower electrode layer 13, 23 Upper electrode extraction part 14, 24 Ir/SnO2 mixed film 15, 25
Tantalum pentoxide film 16, 26 Tungsten trioxide film 17 Reflective electrode layer 27 "Reflective electrode layer containing silver" 28 Second transparent electrode layer
Claims (2)
ック層と「銀を含む反射性電極層」とを順に備えた反射
型エレクトロクロミック素子において、前記エレクトロ
クロミック層と反射性電極層との間に第２の透明電極層
を備えたことを特徴とする反射型エレクトロクロミック
素子。1. A reflective electrochromic element comprising, in order, a first transparent electrode layer, an electrochromic layer, and a "reflective electrode layer containing silver," in which there is a layer between the electrochromic layer and the reflective electrode layer. A reflective electrochromic device comprising a second transparent electrode layer.
Ｉｎ２Ｏ３ 又はＩＴＯ より選ばれたものであるこ
とを特徴とする請求項１に記載の反射型エレクトロクロ
ミック素子。2. The second transparent electrode layer is made of SnO2,
The reflective electrochromic device according to claim 1, characterized in that it is selected from In2O3 or ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3110724A JPH04318525A (en) | 1991-04-17 | 1991-04-17 | Reflection type electrochromic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3110724A JPH04318525A (en) | 1991-04-17 | 1991-04-17 | Reflection type electrochromic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04318525A true JPH04318525A (en) | 1992-11-10 |
Family
ID=14542885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3110724A Pending JPH04318525A (en) | 1991-04-17 | 1991-04-17 | Reflection type electrochromic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04318525A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5471338A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Electrochromic device with plastic substrate |
| US5471554A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Primer for electrochromic device with plastic substrate |
| US5520851A (en) * | 1993-11-12 | 1996-05-28 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
| US5798860A (en) * | 1996-01-16 | 1998-08-25 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
| JP2006520481A (en) * | 2003-01-31 | 2006-09-07 | エヌテラ・リミテッド | Electrochromic display device |
| JP2019514074A (en) * | 2016-05-09 | 2019-05-30 | セイジ・エレクトロクロミクス，インコーポレイテッド | Electrochromic device including means for preventing ion migration and process of forming the same |
-
1991
- 1991-04-17 JP JP3110724A patent/JPH04318525A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5471338A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Electrochromic device with plastic substrate |
| US5471554A (en) * | 1993-11-12 | 1995-11-28 | Ppg Industries, Inc. | Primer for electrochromic device with plastic substrate |
| US5520851A (en) * | 1993-11-12 | 1996-05-28 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
| US5618390A (en) * | 1993-11-12 | 1997-04-08 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
| US5798860A (en) * | 1996-01-16 | 1998-08-25 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
| JP2006520481A (en) * | 2003-01-31 | 2006-09-07 | エヌテラ・リミテッド | Electrochromic display device |
| JP2019514074A (en) * | 2016-05-09 | 2019-05-30 | セイジ・エレクトロクロミクス，インコーポレイテッド | Electrochromic device including means for preventing ion migration and process of forming the same |
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