JPH04318200A - Etching treating liquid and etching method - Google Patents
Etching treating liquid and etching methodInfo
- Publication number
- JPH04318200A JPH04318200A JP10966391A JP10966391A JPH04318200A JP H04318200 A JPH04318200 A JP H04318200A JP 10966391 A JP10966391 A JP 10966391A JP 10966391 A JP10966391 A JP 10966391A JP H04318200 A JPH04318200 A JP H04318200A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- treating liquid
- cobalt
- based alloy
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 39
- 239000007788 liquid Substances 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 title claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 6
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 6
- 239000003112 inhibitor Substances 0.000 claims abstract description 4
- 239000000080 wetting agent Substances 0.000 claims abstract description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 235000011007 phosphoric acid Nutrition 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 butyne diol Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KDKYADYSIPSCCQ-UHFFFAOYSA-N ethyl acetylene Natural products CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はコバルト系合金又はニッ
ケル系合金の微細加工及び鏡面加工を行なうエッチング
処理液及びこのエッチング処理液を使用したエッチング
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching solution for microfabrication and mirror finishing of cobalt-based alloys or nickel-based alloys, and an etching method using this etching solution.
【０００２】0002
【従来の技術】鏡としてはガラス板の背面に金属膜を付
着したものが一般的であり、又アルミニウム板の表面に
適当な皮膜を付着した鏡もある。ところが、いずれの鏡
も耐候性に乏しく曇りやすいという欠陥があるばかりで
なく、ガラスから成る前者のものは破損の虞れが大きい
為航空機や宇宙船内に供する鏡には適さず使用環境に制
約が課されていた。2. Description of the Related Art Mirrors are generally made of a glass plate with a metal film attached to the back surface, and there are also mirrors made of an aluminum plate with a suitable coating attached to the surface. However, not only do these types of mirrors have the disadvantage of poor weather resistance and tend to fog up, but the former ones, which are made of glass, have a high risk of breakage, making them unsuitable for use in aircraft and spacecraft, which limits the environment in which they can be used. It was imposed.
【０００３】そこで、耐候性を有し且つ強度が高い高級
なミラ−として、例えばコバルト系合金又はニッケル系
合金の金属材料を機械的に薄肉状に加工してから鏡面光
沢加工を施したものが知られているが、従来の機械的な
加工では加工精度のばら付きが１／１００ｍｍ単位で生
じやすく、このばら付きは特に厚さ方向で著しい為、μ
ｍ単位の薄肉の鏡面部の作成が非常に困難であった。
又、加工後における表面状態が極めて粗雑なため鏡面仕
上げ（平滑化）が困難であるという欠陥もあった。[0003] Therefore, as a high-grade mirror that is weather resistant and has high strength, for example, a metal material such as a cobalt alloy or a nickel alloy is mechanically processed into a thin wall shape and then subjected to a specular polishing process. It is known that in conventional mechanical processing, variations in processing accuracy tend to occur in units of 1/100 mm, and this variation is particularly significant in the thickness direction, so μ
It was extremely difficult to create a thin mirror surface section of m units. Another drawback was that the surface condition after processing was extremely rough, making mirror finishing (smoothing) difficult.
【０００４】0004
【発明の目的】本発明は、上記欠陥を除去するためにな
されたもので、ニッケル系合金又はコバルト系合金の金
属表面を電解処理することにより、機械加工では極めて
困難であった１／１０００ｍｍ（１μｍ）単位での微細
な薄肉加工を可能とし、 且つ該薄肉部の表面に高度な
鏡面仕上げを施すことができるエッチング処理液及びエ
ッチング方法の提供を目的とする。OBJECTS OF THE INVENTION The present invention has been made to eliminate the above-mentioned defects, and by electrolytically treating the metal surface of a nickel-based alloy or a cobalt-based alloy, it is possible to reduce the size of 1/1000 mm ( The purpose of the present invention is to provide an etching solution and an etching method that enable microscopic thin wall processing in units of 1 μm) and provide a high mirror finish to the surface of the thin wall portion.
【０００５】[0005]
【発明の概要】上記目的を達成するため、本発明におい
ては以下の如き構成をとる。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention adopts the following configuration.
【０００６】即ち、コバルト系合金又はニッケル系合金
をエッチングする為のエッチング処理液であって、リン
酸を主成分とし、更に湿潤剤及びインヒビタとして有機
化合物を添加してなることを特徴としている。That is, it is an etching solution for etching a cobalt-based alloy or a nickel-based alloy, and is characterized by containing phosphoric acid as a main component and further adding an organic compound as a wetting agent and an inhibitor.
【０００７】又、使用電流密度範囲を５０〜２００Ａ／
ｃｍ２ の任意の値に設定すると共に、電解時間を調整
することによりエッチング量を微調整することを特徴と
している。[0007] Also, the current density range used is 50 to 200A/
The etching amount is set to an arbitrary value in cm2 and the etching amount is finely adjusted by adjusting the electrolysis time.
【０００８】[0008]
【発明の実施例】以下、本発明を実施例に基づいて詳細
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below based on examples.
【０００９】本発明に係るエッチング処理液は、リン酸
（Ｈ３ ＰＯ４ ）を主成分（５０ ｖｏｌ％以上）と
し、更に該エッチング処理液の湿潤性向上剤及びインヒ
ビタとして例えばグリセリン等の有機化合物を副成分（
２５％以下）として含有するよう構成すると共に、斯く
の如く構成したエッチング処理液の使用環境として次の
如き条件を設定するものである。即ち、使用温度範囲を
５０〜１０００ Ｃ（最適な使用温度範囲は６０〜７５
０ Ｃ）とし、使用電流密度範囲を５０〜２００Ａ／ｄ
ｍ２（０．５〜２Ａ／ｃｍ２ ）［最適な使用電流密度
は１００Ａ／ｄｍ２ （１Ａ／ｃｍ２ ）］に設定する
。The etching solution according to the present invention contains phosphoric acid (H3PO4) as a main component (50 vol% or more), and further contains an organic compound such as glycerin as a wettability improver and inhibitor of the etching solution. component(
25% or less), and the following conditions are set as the usage environment of the etching treatment solution thus configured. That is, the operating temperature range is 50 to 1000 C (the optimal operating temperature range is 60 to 75
0 C), and the operating current density range is 50 to 200 A/d.
m2 (0.5 to 2 A/cm2) [the optimum current density to be used is 100 A/dm2 (1 A/cm2)].
【００１０】ここで、使用電流密度としては加工量（エ
ッチング量）に応じて任意な値を選択すればよいことは
勿論である。図１は、使用温度を６００ Ｃ〜７００
Ｃ、極間距離を７０ｍｍとし、カソ−ドをプラチナ（Ｐ
ｔ）とし、且つスケ−ルを１Ｌとしたとき、電流密度を
５０Ａ／ｄｍ２ （一点鎖線図示）、１００Ａ／ｄｍ２
（二点鎖線図示）、２００Ａ／ｄｍ２ （実線図示）
とした場合のそれぞれの電解時間（分）に対するエッチ
ング量（μｍ）を示している。同図によれば、ほぼ３μ
ｍ未満のエッチング加工をするときは電流密度を５０Ａ
／ｄｍ２ に設定し、３μｍ以上であって且つ１０μｍ
未満のエッチング加工をするときは電流密度を１００Ａ
／ｄｍ２ に設定することにより、単位電解時間当たり
のエッチング量を微調整することができることが分かる
。又、１０μｍ以上のエッチング加工をするときは電流
密度を２００Ａ／ｄｍ２ に設定すればよい。[0010] Here, it goes without saying that any value may be selected as the current density used depending on the amount of processing (the amount of etching). Figure 1 shows the operating temperature between 600 C and 700 C.
C, the distance between the electrodes is 70 mm, and the cathode is platinum (P
t) and the scale is 1L, the current density is 50A/dm2 (shown by a dashed line), 100A/dm2
(illustrated with two-dot chain line), 200A/dm2 (illustrated with solid line)
The amount of etching (μm) for each electrolysis time (minutes) is shown. According to the same figure, approximately 3μ
When etching less than m, the current density should be 50A.
/dm2, 3μm or more and 10μm
When etching the current density below 100A,
/dm2, it is possible to finely adjust the amount of etching per unit electrolysis time. Further, when performing etching processing of 10 μm or more, the current density may be set to 200 A/dm 2 .
【００１１】又、エッチング処理液の処理能力及び寿命
の長期安定化を可能とする為、陽極として不溶解性の金
属（プラチナ、鉛等）を使用する。[0011] Furthermore, in order to stabilize the processing capacity and life of the etching solution over a long period of time, an insoluble metal (platinum, lead, etc.) is used as the anode.
【００１２】図２（ａ） ，（ｂ） は、コバルト系合
金からなる直方体状の被加工部品１をエッチング処理す
る前後の状態をそれぞれ示している。まず、被加工部品
１の表面１ａに機械的な切削加工を施し所定深さの溝３
を形成することによって厚さＴ０ の薄肉部（切削加工
跡）５を得る（図２（ａ）参照）。このような機械的な
切削加工では、一般に薄肉部５の厚さＴ０ を５０〜１
００μｍより薄肉化することは困難である。そこで、上
記溝３に更に本発明のエッチング処理液を用いて上記各
種条件下においてエッチングを行なうことによって厚さ
Ｔ１ の薄膜７を得ると共にエッチング後における表面
構造を平滑な鏡面とすることができた（図２（ｂ） 参
照）。この場合、薄膜７の厚さＴ１ を約２μｍ（±１
μｍ）程度の誤差にて加工することができることが実験
により確認された。FIGS. 2A and 2B show the state before and after etching a rectangular parallelepiped workpiece 1 made of a cobalt-based alloy, respectively. First, mechanical cutting is performed on the surface 1a of the workpiece 1 to form grooves 3 of a predetermined depth.
By forming this, a thin part (cutting trace) 5 having a thickness T0 is obtained (see FIG. 2(a)). In such mechanical cutting, the thickness T0 of the thin wall portion 5 is generally set to 50 to 1
It is difficult to make the thickness thinner than 00 μm. Therefore, by further etching the groove 3 using the etching solution of the present invention under the various conditions described above, it was possible to obtain a thin film 7 with a thickness of T1 and to make the surface structure after etching a smooth mirror surface. (See Figure 2(b)). In this case, the thickness T1 of the thin film 7 is approximately 2 μm (±1
It has been confirmed through experiments that processing can be performed with an error of about 1.0 μm.
【００１３】以上説明したように本実施例では、従来極
めて困難であったコバルト系合金の１／１０００ｍｍ単
位（最大誤差３μｍ）での微細加工を可能とし、且つ加
工表面の平滑化（鏡面化）を可能としたため、耐候性に
優れ且つ強度が高く従って航空機又は宇宙船内のミラ−
として最適な金属鏡を得ることができる。As explained above, in this embodiment, it is possible to perform micro-machining of cobalt-based alloys in units of 1/1000 mm (maximum error of 3 μm), which was extremely difficult in the past, and to smooth the machined surface (mirror finish). Because it has excellent weather resistance and high strength, it can be used as a mirror inside an aircraft or spacecraft.
You can get the most suitable metal mirror.
【００１４】尚、本発明は上記実施例のものに限定され
ず、例えばコバルト系合金から成る被加工品の表面平滑
化処理を同金属の研磨処理に応用したり、同金属製加工
部品の端部バリ取りに応用してもよいことは勿論である
。図３（ａ） ，（ｂ） は、このようなバリ取り処理
手順をモデル的に表わした図である。即ち、図３（ａ）
のように加工部品１１の端部に形成されたバリ１３を
本発明の処理液によりエッチングすることによって該バ
リ１３を図３（ｂ）に示すように除去することができる
。It should be noted that the present invention is not limited to the above-mentioned embodiments; for example, the surface smoothing treatment of a workpiece made of a cobalt-based alloy may be applied to the polishing treatment of the same metal, or the edge treatment of a workpiece made of the same metal may be applied. Of course, it can also be applied to deburring parts. FIGS. 3(a) and 3(b) are diagrams showing a model of such a deburring process procedure. That is, FIG. 3(a)
By etching the burr 13 formed at the end of the workpiece 11 with the treatment liquid of the present invention, the burr 13 can be removed as shown in FIG. 3(b).
【００１５】又、本発明のエッチング処理液はコバルト
系合金のみならずニッケル系合金に適用しても同様の効
果を得ることができ、この場合、リン酸と有機化合物に
加えて更にブチンジオ−ル又はサッカリンを約１ ｇ／
ｌ 添加することが望ましい。Furthermore, the etching solution of the present invention can be applied not only to cobalt-based alloys but also to nickel-based alloys to obtain the same effect. In this case, in addition to phosphoric acid and an organic compound, butyne diol is or about 1 g/saccharin
It is desirable to add l.
【００１６】[0016]
【発明の効果】本発明は以上説明したように構成したた
め、耐候性に優れ且つ強度が高いニッケル系合金又はコ
バルト系合金を薄膜加工することができると共に、その
表面を平滑化することによって鏡面とすることができ、
航空機又は宇宙船内のミラ−として最適なミラ−を得る
ことができる。[Effects of the Invention] Since the present invention is constructed as described above, it is possible to process a nickel-based alloy or a cobalt-based alloy that has excellent weather resistance and high strength into a thin film, and by smoothing the surface, it can be made into a mirror surface. can,
A mirror suitable for use in an aircraft or spacecraft can be obtained.
【図１】電解時間とエッチング量との相関図である。FIG. 1 is a correlation diagram between electrolysis time and etching amount.
【図２】本発明をミラ−製造に使用する場合の作用説明
図である。FIG. 2 is an explanatory diagram of the operation when the present invention is used in mirror manufacturing.
【図３】本発明をバリ取り処理に使用する場合の作用説
明図である。FIG. 3 is an explanatory diagram of the operation when the present invention is used for deburring processing.
１ 被加工部品 ７ 薄膜 1 Processed parts 7 Thin film
Claims (2)
エッチングする為のエッチング処理液であって、リン酸
を主成分とし、更に湿潤剤及びインヒビタとして有機化
合物を添加してなることを特徴とするエッチング処理液
。Claim 1: An etching solution for etching cobalt-based alloys or nickel-based alloys, characterized by containing phosphoric acid as a main component and further adding an organic compound as a wetting agent and an inhibitor. processing liquid.
用したエッチング方法であって、使用電流密度範囲を５
０〜２００Ａ／ｃｍ２ の任意の値に設定すると共に、
電解時間を調整することによりエッチング量を微調整す
ることを特徴とするエッチング方法。2. An etching method using the etching solution according to claim 1, wherein the used current density range is 5.
Set it to any value from 0 to 200A/cm2, and
An etching method characterized by finely adjusting the amount of etching by adjusting the electrolysis time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10966391A JPH04318200A (en) | 1991-04-16 | 1991-04-16 | Etching treating liquid and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10966391A JPH04318200A (en) | 1991-04-16 | 1991-04-16 | Etching treating liquid and etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04318200A true JPH04318200A (en) | 1992-11-09 |
Family
ID=14516013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10966391A Pending JPH04318200A (en) | 1991-04-16 | 1991-04-16 | Etching treating liquid and etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04318200A (en) |
-
1991
- 1991-04-16 JP JP10966391A patent/JPH04318200A/en active Pending
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