JPH04313267A - Infrared rays detector - Google Patents
Infrared rays detectorInfo
- Publication number
- JPH04313267A JPH04313267A JP3070857A JP7085791A JPH04313267A JP H04313267 A JPH04313267 A JP H04313267A JP 3070857 A JP3070857 A JP 3070857A JP 7085791 A JP7085791 A JP 7085791A JP H04313267 A JPH04313267 A JP H04313267A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- cadmium
- xte
- substrate
- cadmium mercury
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 14
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 9
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 229910004611 CdZnTe Inorganic materials 0.000 abstract description 3
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 abstract description 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、赤外線検知器に関する
もので、特に多素子化した検知器の素子間のクロストー
クを防止するための構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector, and more particularly to a structure for preventing crosstalk between elements of a multi-element detector.
【０００２】0002
【従来の技術】図３は例えば特開昭６３ー４３３６６号
公報に示された従来のＰ− Ｎ接合赤外線検知器の構造
である。カドミウムテルル（Ｃｄ Ｔｅ ）あるいはカ
ドミウム亜鉛テルル（Ｃｄ Ｚｎ Ｔｅ ）基板１上に
所要のカドミウム水銀テルル（ＣｄｘＨｇ１ーｘＴｅ
）、例えばＰ型ＣｄｘＨｇ１ーｘＴｅ 結晶２を形成し
、このＰ型ＣｄｘＨｇ１ーｘＴｅ 結晶２表面に逆の伝
導型、例えばＮ型層３を形成している。
このような赤外線検知器に入射した赤外光は、ＣｄｘＨ
ｇ１ーｘＴｅ 結晶２内で吸収されて光電変換されキャ
リアが発生する。この発生したキャリアは、ＣｄｘＨｇ
１ーｘＴｅ 結晶２内を拡散し、Ｐー Ｎ接合部へ到達
する。Ｐー Ｎ接合部へ到達したキャリアは光電流を発
生し、赤外光の検知をすることができる。2. Description of the Related Art FIG. 3 shows the structure of a conventional P-N junction infrared detector disclosed, for example, in Japanese Patent Application Laid-open No. 43366/1983. The required amount of cadmium mercury tellurium (CdxHg1
), for example, a P-type CdxHg1-xTe crystal 2 is formed, and on the surface of this P-type CdxHg1-xTe crystal 2, an opposite conductivity type, for example, an N-type layer 3 is formed. Infrared light incident on such an infrared detector is CdxH
g1-xTe is absorbed within the crystal 2 and photoelectrically converted to generate carriers. This generated carrier is CdxHg
It diffuses within the 1-xTe crystal 2 and reaches the P-N junction. The carriers that reach the P-N junction generate a photocurrent, allowing infrared light to be detected.
【０００３】0003
【発明が解決しようとする課題】しかし、上記のような
構造をした従来の赤外線検知器において画素の集積度が
高くなると、赤外光によって発生したキャリアの拡散長
が画素ピッチに対して相対的に長くなり、図４に示すよ
うに複数のＰ−Ｎ接合部へキャリアが拡散し、クロスト
ークを生ずる問題がある。さらに、画素ピッチが短くな
ると、Ｎ層３の横方向への広がりが画素ピッチに対して
相対的に長くなり、隣接するＮ層が重なり、クロストー
クを生ずる場合もあった。[Problems to be Solved by the Invention] However, as the density of pixels in conventional infrared detectors with the above structure increases, the diffusion length of carriers generated by infrared light becomes larger relative to the pixel pitch. As shown in FIG. 4, carriers diffuse into a plurality of PN junctions, causing crosstalk. Furthermore, as the pixel pitch becomes shorter, the width of the N layer 3 in the lateral direction becomes longer relative to the pixel pitch, and adjacent N layers overlap, sometimes resulting in crosstalk.
【０００４】本発明は、かかる問題点を解決するために
なされたものであり、上記のような原因で発生するクロ
ストークを防止し、高感度、高集積度の赤外線検知器を
得ることを目的とする。The present invention has been made to solve these problems, and aims to prevent crosstalk caused by the above-mentioned causes and to obtain a highly sensitive and highly integrated infrared detector. shall be.
【０００５】[0005]
【課題を解決するための手段】本発明に係わる赤外線検
知器は、カドミウムテルル（Ｃｄ Ｔｅ ）、カドミウ
ム亜鉛テルル（Ｃｄ Ｚｎ Ｔｅ ）、ガリウムひ素（
Ｇａ Ａｓ ）、シリコン（Ｓｉ ）およびサファイア
（Ａｌ２Ｏ３ ）のうちの一方よりなり表面に溝を有す
る基板、この基板の表面部に形成されたカドミウム水銀
テルル（ＣｄｘＨｇ１ーｘＴｅ ）、並びに上記溝間の
このカドミウム水銀テルルの一部に形成されたＰーＮ接
合を備えたものである。[Means for Solving the Problems] The infrared detector according to the present invention uses cadmium tellurium (Cd Te ), cadmium zinc telluride (Cd Zn Te ), and gallium arsenide (
A substrate made of one of GaAs), silicon (Si), and sapphire (Al2O3) and having grooves on its surface, cadmium mercury tellurium (CdxHg1-xTe) formed on the surface of this substrate, and this between the grooves. It is equipped with a PN junction formed in a part of cadmium mercury telluride.
【０００６】さらに溝の底および側面の少なくとも一方
に、カドミウム水銀テルル（ＣｄｘＨｇ１ーｘＴｅ ）
より赤外光に対する吸収係数が大きいカドミウム水銀テ
ルル（ＣｄｙＨｇ１ーｙＴｅ ０≦ｙ＜ｘ）を形成した
ものである。Further, at least one of the bottom and side surfaces of the groove is coated with cadmium mercury tellurium (CdxHg1-xTe).
It is made of cadmium mercury tellurium (CdyHg1-yTe 0≦y<x), which has a larger absorption coefficient for infrared light.
【０００７】[0007]
【作用】本発明における赤外線検知器は、基板上に溝を
形成しているので、隣接するＮ層（またはＰ層）が重な
らずクロストークを防止できる。従って、キャリア拡散
長以下の画素ピッチを有するような画素の高集積化が可
能となる。[Operation] Since the infrared detector according to the present invention has grooves formed on the substrate, adjacent N layers (or P layers) do not overlap and crosstalk can be prevented. Therefore, it is possible to highly integrate pixels having a pixel pitch that is equal to or less than the carrier diffusion length.
【０００８】また、この赤外線検知器の受光部であるＣ
ｄｘＨｇ１ーｘＴｅ より赤外光に対する吸収係数が大
きいカドミウム水銀テルル（ＣｄｙＨｇ１ーｙＴｅ ０
≦ｙ＜ｘ）は赤外線吸収層４として働くため、これを上
記溝の底および側面の少なくとも一方に形成すると、こ
の部分に入射した赤外光によってキャリアが発生せずク
ロストークを生じない。従って、赤外線検知器の高感度
化が可能となる。[0008] Furthermore, C, which is the light receiving part of this infrared detector,
dxHg1-xTe Cadmium mercury telluride (CdyHg1-yTe 0
≦y<x) acts as the infrared absorbing layer 4, so if this is formed on at least one of the bottom and side surfaces of the groove, no carriers are generated by the infrared light incident on this portion, and no crosstalk occurs. Therefore, it becomes possible to increase the sensitivity of the infrared detector.
【０００９】[0009]
【実施例】実施例１．以下、本発明の一実施例を図につ
いて説明する。図１は本発明の一実施例を示す斜視図、
図２ａ，ｂ，ｃ，ｄ，ｅはそれぞれ図１に示す本発明の
一実施例の製造工程を示す断面図である。[Example] Example 1. Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of the present invention;
2a, b, c, d, and e are cross-sectional views showing the manufacturing process of the embodiment of the present invention shown in FIG. 1, respectively.
【００１０】まず製造方法について説明する。図２ａに
おいてＣｄ Ｔｅ基板１上に溝５を形成して図２ｂの状
態になる。この溝５内に、赤外線検知器の受光部である
ＣｄｘＨｇ１ーｘＴｅ より赤外光に対する吸収係数が
大きく赤外線吸収層４となる組成ｙが０≦ｙ＜ｘを有す
るＣｄｙＨｇ１ーｙＴｅ 結晶を形成して図２ｃの状態
となる。この状態で、Ｐ形ＣｄｘＨｇ１ーｘＴｅ 結晶
２をエピタキシャル成長させたものが図２ｄの状態であ
る。溝５間のＰ型ＣｄｘＨｇ１ーｘＴｅ 結晶２の表面
層の一部にＮ層３を形成することによりＰーＮ接合を形
成する。これが図２ｅの状態である。First, the manufacturing method will be explained. In FIG. 2a, grooves 5 are formed on the CdTe substrate 1, resulting in the state shown in FIG. 2b. In this groove 5, a CdyHg1-yTe crystal is formed, which has a larger absorption coefficient for infrared light than CdxHg1-xTe, which is the light receiving part of the infrared detector, and has a composition y of 0≦y<x, which forms the infrared absorption layer 4. The state shown in FIG. 2c is reached. In this state, a P-type CdxHg1-xTe crystal 2 is epitaxially grown, resulting in the state shown in FIG. 2d. A PN junction is formed by forming an N layer 3 on a part of the surface layer of the P-type CdxHg1-xTe crystal 2 between the grooves 5. This is the situation in Figure 2e.
【００１１】前記のようにＣｄ Ｔｅ 基板１に形成し
た溝は、隣接する画素のＮ層を重ならずに形成できるた
めクロストークを防止できる。従って、キャリア拡散長
以下の画素ピッチを有する高集積度の赤外線検知器の作
製が可能となる。The grooves formed in the CdTe substrate 1 as described above can prevent crosstalk because the N layers of adjacent pixels can be formed without overlapping. Therefore, it is possible to manufacture a highly integrated infrared detector having a pixel pitch equal to or less than the carrier diffusion length.
【００１２】また、赤外線検知器の受光部であるＣｄｘ
Ｈｇ１ーｘＴｅ より赤外光に対する吸収係数が大きい
組成０≦ｙ＜ｘを有するＣｄｙＨｇ１ーｙＴｅ は赤外
線吸収層４として働くため、これを上記溝の底および溝
側面に形成すれば、この部分に入射した赤外光によって
キャリアが発生せずクロストークを生じない。従って、
上記高集積化に加えて高感度の赤外線検知器作製が可能
となる。[0012] Furthermore, Cdx, which is the light receiving part of the infrared detector,
CdyHg1-yTe, which has a composition 0≦y<x and has a larger absorption coefficient for infrared light than Hg1-xTe, works as the infrared absorption layer 4, so if it is formed on the bottom and side surfaces of the groove, the light incident on this part will be No carriers are generated by the infrared light, and no crosstalk occurs. Therefore,
In addition to the above-mentioned high integration, it becomes possible to produce a highly sensitive infrared detector.
【００１３】実施例２．ところで上記説明では、基板１
としてＣｄＴｅ結晶を用いたが、Ｃｄ Ｚｎ Ｔｅ あ
るいはＧａ Ａｓ あるいはＳｉ あるいはＡｌ２Ｏ３
基板を用いてもよい。ただし、Ｇａ Ａｓ 基板を用
いる場合、溝５形成の後に基板との格子整合を取るため
Ｃｄ Ｔｅを基板表面全域につける必要がある。又、Ｓ
ｉ 基板を用いる場合、溝５形成の後に格子整合を取る
ためＧａ Ａｓ を付け、その後Ｃｄ Ｔｅ を基板表
面全域に付ける必要がある。Example 2. By the way, in the above explanation, the substrate 1
CdTe crystal was used as the crystal, but CdZnTe or GaAs or Si or Al2O3
A substrate may also be used. However, when using a GaAs substrate, it is necessary to apply CdTe to the entire surface of the substrate after forming the grooves 5 in order to achieve lattice matching with the substrate. Also, S
When using an i substrate, it is necessary to apply GaAs to obtain lattice matching after forming the groove 5, and then apply CdTe to the entire surface of the substrate.
【００１４】実施例３．また、上記説明ではＰ型のＣｄ
ｘＨｇ１ーｘＴｅ を形成した後にＮ型のＣｄｘＨｇ１
ーｘＴｅ を形成した構造で説明したが、Ｎ型のＣｄｘ
Ｈｇ１ーｘＴｅ を形成した後でＰ型のＣｄｘＨｇ１ー
ｘＴｅ を形成した構造のものでも利用できるのはいう
までもなく、この場合は隣接するＰ層の広がりを防止で
きる。Example 3. In addition, in the above explanation, P-type Cd
After forming xHg1-xTe, N-type CdxHg1
-xTe was explained, but N-type Cdx
Needless to say, a structure in which P-type CdxHg1-xTe is formed after Hg1-xTe is formed can also be used, and in this case, spreading of the adjacent P layer can be prevented.
【００１５】[0015]
【発明の効果】以上のように、本発明によれば、カドミ
ウムテルル（Ｃｄ Ｔｅ ）、カドミウム亜鉛テルル（
Ｃｄ Ｚｎ Ｔｅ ）、ガリウムひ素（Ｇａ Ａｓ ）
、シリコン（Ｓｉ ）およびサファイア（Ａｌ２Ｏ３
）のうちの一方よりなり表面に溝を有する基板、この基
板の表面部に形成されたカドミウム水銀テルル（Ｃｄｘ
Ｈｇ１ーｘＴｅ ）、並びに上記溝間のこのカドミウム
水銀テルルの一部に形成されたＰーＮ接合を備えたので
、隣接するＮ層（またはＰ層）の広がりを基板上に形成
した溝によって防ぎ、キャリアの拡散長以下の画素ピッ
チを有するような高集積度の赤外線検知器が得られる。[Effects of the Invention] As described above, according to the present invention, cadmium telluride (CdTe), cadmium zinc telluride (
CdZnTe), gallium arsenide (GaAs)
, silicon (Si) and sapphire (Al2O3
) with grooves on its surface, and a substrate made of cadmium mercury tellurium (Cdx) formed on the surface of this substrate.
Hg1-xTe) and a P-N junction formed in a part of this cadmium mercury telluride between the grooves, the spread of the adjacent N layer (or P layer) can be prevented by the groove formed on the substrate. , a highly integrated infrared detector having a pixel pitch smaller than the carrier diffusion length can be obtained.
【００１６】さらに溝の底および側面の少なくとも一方
に、カドミウム水銀テルル（ＣｄｘＨｇ１ーｘＴｅ ）
より赤外光に対する吸収係数が大きいカドミウム水銀テ
ルル（ＣｄｙＨｇ１ーｙＴｅ ０≦ｙ＜ｘ）を形成すれ
ば、上記効果に加えて、キャリアの発生を赤外線吸収層
によって制御しクロストークを防止できるため、高感度
の赤外線検知器が得られる。Furthermore, cadmium mercury telluride (CdxHg1-xTe) is applied to at least one of the bottom and side surfaces of the groove.
By forming cadmium mercury tellurium (CdyHg1-yTe 0≦y<x), which has a larger absorption coefficient for infrared light, in addition to the above effects, carrier generation can be controlled by the infrared absorption layer and crosstalk can be prevented. A highly sensitive infrared detector can be obtained.
【図１】本発明の実施例１の要部を示す斜視図である。FIG. 1 is a perspective view showing essential parts of a first embodiment of the present invention.
【図２】本発明の実施例１の製造工程を示す断面図であ
る。FIG. 2 is a cross-sectional view showing the manufacturing process of Example 1 of the present invention.
【図３】従来の赤外線検知器を示す断面図である。FIG. 3 is a sectional view showing a conventional infrared detector.
【図４】従来の赤外線検知器の問題点を説明する説明図
である。FIG. 4 is an explanatory diagram illustrating problems with a conventional infrared detector.
１ 基板
２ Ｐ型ＣｄｘＨｇ１ーｘＴｅ 層
３ Ｎ型ＣｄｘＨｇ１ーｘＴｅ 層
４ 組成０≦ｙ＜ｘのＣｄｙＨｇ１ーｙＴｅよりなる
赤外線吸収層
５ 溝
６ 赤外光1 Substrate 2 P-type CdxHg1-xTe layer 3 N-type CdxHg1-xTe layer 4 Infrared absorption layer 5 made of CdyHg1-yTe with composition 0≦y<x Groove 6 Infrared light
Claims (2)
カドミウム亜鉛テルル（Ｃｄ Ｚｎ Ｔｅ ）、ガリウ
ムひ素（Ｇａ Ａｓ ）、シリコン（Ｓｉ ）およびサ
ファイア（Ａｌ２Ｏ３ ）のうちの一方よりなり表面に
溝を有する基板、この基板の表面部に形成されたカドミ
ウム水銀テルル（ＣｄｘＨｇ１ーｘＴｅ ）、並びに上
記溝間のこのカドミウム水銀テルルの一部に形成された
ＰーＮ接合を備えた赤外線検知器。[Claim 1] Cadmium telluride (CdTe),
A substrate made of one of cadmium zinc telluride (CdZnTe), gallium arsenide (GaAs), silicon (Si), and sapphire (Al2O3) and having grooves on its surface, and cadmium mercury tellurium formed on the surface of this substrate. (CdxHg1-xTe), and an infrared detector with a PN junction formed in a portion of this cadmium mercury tellurium between the grooves.
、カドミウム水銀テルル（ＣｄｘＨｇ１ーｘＴｅ ）よ
り赤外光に対する吸収係数が大きいカドミウム水銀テル
ル（ＣｄｙＨｇ１ーｙＴｅ ０≦ｙ＜ｘ）を形成した請
求項第１項記載の赤外線検知器。2. A claim in which cadmium mercury tellurium (CdyHg1-yTe 0≦y<x), which has a larger absorption coefficient for infrared light than cadmium mercury-tellurium (CdxHg1-xTe), is formed on at least one of the bottom and side surfaces of the groove. The infrared detector according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3070857A JPH04313267A (en) | 1991-04-03 | 1991-04-03 | Infrared rays detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3070857A JPH04313267A (en) | 1991-04-03 | 1991-04-03 | Infrared rays detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04313267A true JPH04313267A (en) | 1992-11-05 |
Family
ID=13443656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3070857A Pending JPH04313267A (en) | 1991-04-03 | 1991-04-03 | Infrared rays detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04313267A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111539A (en) * | 1994-10-07 | 1996-04-30 | Nec Corp | Manufacture of photovoltaic type hgcdte infrared ray detector |
| JP2008072136A (en) * | 2007-10-24 | 2008-03-27 | Nagoya Industrial Science Research Inst | Method for manufacturing semiconductor radiation detector |
| US8039808B2 (en) | 2005-09-15 | 2011-10-18 | Koninklijke Philips Electronics N.V. | Performance solid state detectors |
-
1991
- 1991-04-03 JP JP3070857A patent/JPH04313267A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111539A (en) * | 1994-10-07 | 1996-04-30 | Nec Corp | Manufacture of photovoltaic type hgcdte infrared ray detector |
| US8039808B2 (en) | 2005-09-15 | 2011-10-18 | Koninklijke Philips Electronics N.V. | Performance solid state detectors |
| JP2008072136A (en) * | 2007-10-24 | 2008-03-27 | Nagoya Industrial Science Research Inst | Method for manufacturing semiconductor radiation detector |
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