JPH04305653A - Peeling liquid for resist - Google Patents
Peeling liquid for resistInfo
- Publication number
- JPH04305653A JPH04305653A JP9502291A JP9502291A JPH04305653A JP H04305653 A JPH04305653 A JP H04305653A JP 9502291 A JP9502291 A JP 9502291A JP 9502291 A JP9502291 A JP 9502291A JP H04305653 A JPH04305653 A JP H04305653A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photoresist
- positive
- solvent
- triethanolamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title abstract description 5
- 239000002904 solvent Substances 0.000 claims abstract description 18
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000002596 lactones Chemical class 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 239000010949 copper Substances 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- -1 δ-vanrolactone Chemical compound 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、プリント回路又はリー
ドフレームの製造等の際に、基体に塗布されたフォトレ
ジストを基体から剥離するためのレジスト用剥離液に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping solution for stripping a photoresist coated on a substrate during the manufacture of printed circuits or lead frames.
【０００２】0002
【従来の技術】フォトレジストを利用したプリント回路
板又はリードフレームの製造は、基板上にフォトレジス
トを塗布、乾燥した後、所望のパターンのマスクを介し
て紫外線を照射し、現像処理をしてパターン形成を行な
い、これを保護膜として基板に対し選択的にエッチング
またはめっきを行った後、保護被膜として残ったフォト
レジストを溶媒で剥離する方法で行われている。[Prior Art] The production of printed circuit boards or lead frames using photoresists involves coating a photoresist on a substrate, drying it, irradiating it with ultraviolet rays through a mask with a desired pattern, and developing it. This method involves forming a pattern, selectively etching or plating the substrate using the pattern as a protective film, and then peeling off the photoresist remaining as a protective film using a solvent.
【０００３】このフォトレジストには、露光によって不
溶化するネガ型と逆に露光によって可溶化するポジ型と
がある。ネガ型フォトレジストとしては、アクリル系樹
脂を含有する光重合型のフォトレジストが広く用いられ
ているが、このフォトレジストは銅箔に対する接着力が
強く、ポジ型に対して安価であるという利点があるが、
現像力が１００μｍ以下のパターン形成には使用できな
い。線巾が１００μｍ以下のパターン形成には、解像力
に優れた、フェノール・ホルムアルデヒド樹脂等に光増
感剤を添加したポジ型フォトレジストが使用されている
。There are two types of photoresists: negative type, which becomes insolubilized by exposure to light, and positive type, which becomes soluble by exposure. Photopolymerizable photoresists containing acrylic resin are widely used as negative photoresists, but this photoresist has the advantage of having strong adhesion to copper foil and being cheaper than positive photoresists. Yes, but
It cannot be used for pattern formation with a developing power of 100 μm or less. To form a pattern with a line width of 100 μm or less, a positive photoresist with excellent resolution and made of a phenol-formaldehyde resin or the like with a photosensitizer added is used.
【０００４】したがって、一部に線巾が１００μｍ以下
のパターンを含むようなフレキシブルプリント回路板、
リードフレーム、ＴＡＢ等の製造においては、ネガ型フ
ォトレジストとポジ型フォトレジストを併用するような
場合が生じている。[0004] Therefore, a flexible printed circuit board that partially includes a pattern with a line width of 100 μm or less,
In the manufacture of lead frames, TABs, etc., there are cases in which negative-type photoresists and positive-type photoresists are used in combination.
【０００５】ところで、ネガ型フォトレジストの剥離液
は、水酸化ナトリウムの１〜５％の水溶液がもっぱら用
いられている。しかし、これをポジ型フォトレジストに
用いるには、残存するフォトレジストに再度光を照射し
なければならず、工程が複雑となり好ましくない。By the way, a 1 to 5% aqueous solution of sodium hydroxide is mainly used as a stripping solution for negative photoresists. However, in order to use this as a positive photoresist, the remaining photoresist must be irradiated with light again, which is undesirable because the process becomes complicated.
【０００６】一方、ポジ型フォトレジスト剥離剤として
はフェノール又はその誘導体と塩素系有機溶剤を含有す
るものが用いられている。この剥離剤は可燃性であり、
毒性の問題も指摘されており、作業上及び安全上好まし
いものではなかった。このため、ジエチレングリコール
系溶媒とエタノールアミンの混合液からなる剥離液が提
案されている（特開昭６４−８８５４８号）。しかし、
このモノエタノールアミンを含有する剥離液は、モノエ
タノールアミンが銅と錯体を形成するためと考えられる
が、銅をわずかに溶解する。このため、線巾１００μｍ
以下のパターンにおいて、リードが溶解すればリードの
強度が低下する等の問題が発生するので、線巾１００μ
ｍ以下のパターン形成には前記モノエタノールアミンを
含有する剥離液を用いることはできなかった。On the other hand, as a positive photoresist remover, one containing phenol or a derivative thereof and a chlorinated organic solvent is used. This stripper is flammable and
The problem of toxicity was also pointed out, and it was not desirable from a work and safety standpoint. For this reason, a stripping solution consisting of a mixture of a diethylene glycol solvent and ethanolamine has been proposed (Japanese Patent Laid-Open No. 88548/1983). but,
This stripping solution containing monoethanolamine slightly dissolves copper, probably because monoethanolamine forms a complex with copper. For this reason, the line width is 100 μm
In the following patterns, if the lead melts, problems such as a decrease in lead strength will occur, so the line width is 10μ.
It was not possible to use the monoethanolamine-containing stripping solution to form a pattern with a size of less than m.
【０００７】[0007]
【発明が解決しようとする課題】本発明者は上記現状に
鑑み鋭意研究を進めた結果、トリエタノールアミンと特
定の有機溶媒から成る溶液を剥離液として使用すると、
ポジ型及びネガ型の両方のフォトレジストを完全に溶解
除去でき、しかも銅の溶解が発生せず、線巾１００μｍ
以下のパターン形成においても、リードが溶解せず、リ
ードの強度の低下が起こらないことを見出した。[Problems to be Solved by the Invention] The present inventor has carried out intensive research in view of the above-mentioned current situation, and has found that when a solution consisting of triethanolamine and a specific organic solvent is used as a stripping liquid,
Both positive and negative photoresists can be completely dissolved and removed without copper dissolution, and the line width is 100 μm.
It has been found that even in the following pattern formation, the leads do not dissolve and the strength of the leads does not decrease.
【０００８】本発明は、かかる知見に基づきなされたも
ので、本発明の目的は、作業上及び安全上の問題がなく
、ポジ型及びネガ型フォトレジストの両方に使用可能で
あり、しかも銅を溶解しない剥離液を提供することにあ
る。The present invention has been made based on this knowledge, and the object of the present invention is to provide a method that does not cause any operational or safety problems, can be used for both positive-type and negative-type photoresists, and is made of copper. The object of the present invention is to provide a stripping solution that does not dissolve.
【０００９】[0009]
【課題を解決するための手段】本発明は、一般式Ｒ２Ｏ
〔（ＣＨ２）ｍＯ〕ｎＲ１（式中、Ｒ１は炭素数１〜３
のアルキル基を、Ｒ２は水素または炭素数１〜３のアル
キル基を表わし、ｎは１または２、ｍは２または３の整
数を表わす）で示される溶媒またはラクトン系溶媒の５
０〜８０重量部とトリエタノールアミンの５０〜２０重
量部とを含有することからなるフォトレジスト用剥離剤
である。[Means for Solving the Problems] The present invention provides the general formula R2O
[(CH2)mO]nR1 (wherein, R1 has 1 to 3 carbon atoms
R2 represents hydrogen or an alkyl group having 1 to 3 carbon atoms, n represents an integer of 1 or 2, m represents an integer of 2 or 3) or a lactone solvent.
This is a photoresist stripping agent containing 0 to 80 parts by weight and 50 to 20 parts by weight of triethanolamine.
【００１０】本発明に用いられる上記一般式で示される
溶媒は、主としてフォトレジストを溶解させる機能を分
担し、Ｒ１とＲ２のアルキル基の炭素数が４以上となる
とフォトレジストを完全に溶解することが困難になる。
また、ｎが３以上の化合物は、フォトレジストを完全に
剥離することが困難となり、さらにｍが１または４以上
の化合物も同様に剥離が不十分となるという欠点を有し
ている。これらの溶剤としては、特にエチレングリコー
ルモノメチルエーテル、エチレングリコールモノエチル
エーテル、ジエチレングリコールモノメチルエーテル、
ジエチレングリコールモノエチルエーテル、ジエチレン
グリコールジエチルエーテル、ジプロピレングリコール
モノメチルエーテル等が好適である。また、ラクトン系
溶媒は上記化合物の溶媒と同様な機能を有し、このうち
でも、特にγ−ブチロラクトン、β−プロピオラクトン
、δ−バンロラクトン又はε−カプロラクトンなどが好
適である。また、これらの溶媒は単独でも２種以上を混
合しても使用できる。これらの溶媒は、剥離剤全量のう
ち、５０〜８０重量部となるようにする必要があり、５
０重量部以下であれば、剥離液の粘度が高くなって剥離
不良となり、８０重量部以上でも同様に剥離不良の問題
が生じる。The solvent represented by the above general formula used in the present invention mainly has the function of dissolving the photoresist, and when the number of carbon atoms in the alkyl groups of R1 and R2 is 4 or more, the solvent can completely dissolve the photoresist. becomes difficult. Compounds in which n is 3 or more make it difficult to completely remove the photoresist, and compounds in which m is 1 or 4 or more similarly have the disadvantage that the removal is insufficient. These solvents include, in particular, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether,
Diethylene glycol monoethyl ether, diethylene glycol diethyl ether, dipropylene glycol monomethyl ether, etc. are suitable. Moreover, the lactone-based solvent has the same function as the solvent for the above-mentioned compounds, and among these, γ-butyrolactone, β-propiolactone, δ-vanrolactone, or ε-caprolactone are particularly suitable. Moreover, these solvents can be used alone or in combination of two or more. These solvents must be used in an amount of 50 to 80 parts by weight based on the total amount of the stripping agent.
If it is less than 0 parts by weight, the viscosity of the stripping liquid becomes high, resulting in poor peeling, and if it is more than 80 parts by weight, the problem of poor peeling similarly occurs.
【００１１】一方、トリエタノールアミンは主として基
板からレジストを剥離する機能を果たすものであるが、
トリエタノールアミンは２０〜５０重量部とする必要が
ある。トリエタノールアミンが２０％未満ではフォトレ
ジストの完全剥離、溶解ができず、また５０％を超える
と剥離液の粘度が高くなり、剥離不良が生じる等の問題
が起こる。On the other hand, triethanolamine mainly functions to strip the resist from the substrate, but
Triethanolamine must be used in an amount of 20 to 50 parts by weight. If the triethanolamine content is less than 20%, the photoresist cannot be completely removed or dissolved, and if it exceeds 50%, the viscosity of the stripping solution increases, causing problems such as poor peeling.
【００１２】尚、本発明においては、上記一般式で示さ
れる溶媒あるいはラクトン系溶媒とトリエタノールアミ
ン以外の、例えば、非イオン系界面活性剤等を添加して
も良いことは云うまでもない。In the present invention, it goes without saying that other than the solvent represented by the above general formula or the lactone solvent and triethanolamine, for example, a nonionic surfactant may be added.
【００１３】以下に実施例を挙げて本発明をさらに詳し
く説明する。但し、本発明の範囲は下記実施例により何
等制限されるものではない。The present invention will be explained in more detail with reference to Examples below. However, the scope of the present invention is not limited in any way by the following examples.
【００１４】[0014]
【実施例】実施例１〜８
表１に示す組成でネガ型フォトレジストとポジ型フ
ォトレジストを調製した。これらの組成物を別々に銅箔
付ポリイミドフィルム上にロールコーターを用いて塗布
した。内部温度１００℃に保持された赤外線乾燥機中で
ネガ型は３０分、ポジ型は１０分乾燥し、膜厚がネガ型
で１０μｍ、ポジ型で３μｍのフォトレジスト被膜を形
成した。Examples Examples 1 to 8 Negative photoresists and positive photoresists were prepared with the compositions shown in Table 1. These compositions were separately applied onto a copper foil-attached polyimide film using a roll coater. The negative type was dried for 30 minutes and the positive type was dried for 10 minutes in an infrared dryer maintained at an internal temperature of 100° C. to form a photoresist film having a film thickness of 10 μm for the negative type and 3 μm for the positive type.
【００１５】ネガマスク〔ピッチ１０００μｍ（ライン
巾５００μｍ、スペース巾５００μｍ）のくし型、本数
２〕とポジマスク〔ピッチ１１０μｍ（ライン４０μｍ
、スペース７０μｍ）のくし型、本数２００〕をネガ型
フォトレジスト被膜表面及びポジ型フォトレジスト被膜
表面の両方にのせ、高圧水銀灯（５０００Ｗ×２）でネ
ガ型、ポジ型ともに、３００Ｊ／ｃｍ２の紫外線照射を
した後、ネガ型は１，１，１−トリクロロエタン、ポジ
型は１％水酸化カリウム水溶液で現像処理をしてフォト
レジストパターンを形成した。Negative mask [comb shape with pitch 1000 μm (line width 500 μm, space width 500 μm), number of 2] and positive mask [pitch 110 μm (line width 40 μm)
, space 70 μm), 200 combs] were placed on both the negative photoresist film surface and the positive photoresist film surface, and a high pressure mercury lamp (5000W x 2) was used to expose both the negative and positive types to ultraviolet rays of 300 J/cm2. After irradiation, a negative type was developed with 1,1,1-trichloroethane, and a positive type was developed with a 1% potassium hydroxide aqueous solution to form a photoresist pattern.
【００１６】上記フォトレジストパターンを表２に示す
組成の剥離液に、液温４０℃で、４分間浸漬し、水洗を
行ないレジストパターンの剥離状態を観察した。この結
果を表３に示す。また、実施例２、５、８については浸
漬前後のパターン上部の巾を測定した（浸漬時間４分と
６０分について実施）。この結果を表４に示した。The above photoresist pattern was immersed in a stripping solution having the composition shown in Table 2 at a temperature of 40° C. for 4 minutes, washed with water, and the state of stripping of the resist pattern was observed. The results are shown in Table 3. Furthermore, for Examples 2, 5, and 8, the width of the upper part of the pattern was measured before and after dipping (conducted for dipping times of 4 minutes and 60 minutes). The results are shown in Table 4.
【表１】[Table 1]
【表２】[Table 2]
【表３】[Table 3]
【表４】[Table 4]
【００１７】比較例１〜１６
実施例と同様にして、表５に示す組成の剥離液につ
いて、レジストパターンの剥離状態を観察した。この結
果を表６に示した。また、比較例１について、実施例と
同様にして浸漬前後のパターン上部の巾を測定した。こ
の結果を表７に示した。Comparative Examples 1 to 16 In the same manner as in Examples, the peeling state of resist patterns was observed using stripping solutions having the compositions shown in Table 5. The results are shown in Table 6. Further, regarding Comparative Example 1, the width of the upper part of the pattern before and after dipping was measured in the same manner as in the example. The results are shown in Table 7.
【表５】[Table 5]
【表６】[Table 6]
【表７】[Table 7]
【００１８】これらの結果から明らかなように、一般式
Ｒ２Ｏ〔（ＣＨ２）ｍＯ〕ｎＲ１或いはラクトン系の溶
媒とトリエタノールアミンとを含有する剥離剤が剥離性
に優れ、しかもライン巾の減少が少なく、銅の溶解が生
じていないことが分かる。これに対して上記一般式で示
される溶媒やラクトン系溶媒或いはトリエタノールアミ
ン以外を用いると剥離性が悪いことが分かる。尚、トリ
エタノールアミンに代えて、モノエタノールアミンを用
いる比較例１は剥離性は良好であるが、ライン巾の減少
が大きく、銅の溶解が生じていることが分かる。As is clear from these results, the stripping agent containing the general formula R2O[(CH2)mO]nR1 or a lactone-based solvent and triethanolamine has excellent stripping properties and causes less decrease in line width. , it can be seen that no copper dissolution occurs. On the other hand, it can be seen that the use of solvents other than those represented by the above general formula, lactone solvents, or triethanolamine results in poor releasability. In Comparative Example 1, in which monoethanolamine was used instead of triethanolamine, the releasability was good, but the line width was greatly reduced, indicating that copper was dissolved.
【００１９】[0019]
【発明の効果】本発明の剥離剤は、作業上及び安全上の
問題がなく、ポジ型及びネガ型フォトレジストの両方に
使用可能であり、しかも銅を溶解せず、線巾１００μｍ
以下のパターン形成においてもパターン強度を低下させ
ることがない等の格別の効果を奏する。Effects of the Invention The stripping agent of the present invention causes no operational or safety problems, can be used for both positive-type and negative-type photoresists, does not dissolve copper, and can be used to remove wires with a line width of 100 μm.
Even in the following pattern formation, special effects such as no reduction in pattern strength are achieved.
Claims (1)
式中、Ｒ１は炭素数１〜３のアルキル基を、Ｒ２は水素
または炭素数１〜３のアルキル基を表わし、ｎは１また
は２、ｍは２または３の整数を表わす）で示される溶媒
またはラクトン系溶媒の５０〜８０重量部とトリエタノ
ールアミンの５０〜２０重量部とを含有することを特徴
とするレジスト用剥離液Claim 1: General formula R2O[(CH2)mO]nR1(
In the formula, R1 represents an alkyl group having 1 to 3 carbon atoms, R2 represents hydrogen or an alkyl group having 1 to 3 carbon atoms, n represents an integer of 1 or 2, and m represents an integer of 2 or 3. Or a resist stripper containing 50 to 80 parts by weight of a lactone solvent and 50 to 20 parts by weight of triethanolamine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9502291A JPH04305653A (en) | 1991-04-02 | 1991-04-02 | Peeling liquid for resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9502291A JPH04305653A (en) | 1991-04-02 | 1991-04-02 | Peeling liquid for resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04305653A true JPH04305653A (en) | 1992-10-28 |
Family
ID=14126442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9502291A Pending JPH04305653A (en) | 1991-04-02 | 1991-04-02 | Peeling liquid for resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04305653A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000006831A (en) * | 1999-11-05 | 2000-02-07 | 윤세훈 | Aqueous positive stripper composition |
-
1991
- 1991-04-02 JP JP9502291A patent/JPH04305653A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000006831A (en) * | 1999-11-05 | 2000-02-07 | 윤세훈 | Aqueous positive stripper composition |
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