JPH04284887A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPH04284887A JPH04284887A JP4856291A JP4856291A JPH04284887A JP H04284887 A JPH04284887 A JP H04284887A JP 4856291 A JP4856291 A JP 4856291A JP 4856291 A JP4856291 A JP 4856291A JP H04284887 A JPH04284887 A JP H04284887A
- Authority
- JP
- Japan
- Prior art keywords
- exchange resin
- ion exchange
- ion
- pure water
- lot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000003456 ion exchange resin Substances 0.000 claims abstract description 64
- 229920003303 ion-exchange polymer Polymers 0.000 claims abstract description 64
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000012856 packing Methods 0.000 claims 1
- 230000002950 deficient Effects 0.000 abstract description 9
- 238000011156 evaluation Methods 0.000 abstract description 6
- 230000002159 abnormal effect Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Treatment Of Water By Ion Exchange (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体装置の製造方法
に係り、特に、半導体装置の製造に用いる純水の供給方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing semiconductor devices, and more particularly to a method for supplying pure water used in manufacturing semiconductor devices.
【０００２】半導体装置の製造では、純水を多用してお
り、その純水の水質が製造歩留りに大きく影響するので
、常に良質な純水を供給することが重要である。[0002] In the manufacture of semiconductor devices, pure water is frequently used, and the quality of the pure water greatly affects the manufacturing yield, so it is important to always supply high quality pure water.
【０００３】0003
【従来の技術】半導体装置製造工場で使用する純水は、
一般に、工場全体を賄う純水製造部門から各部門に供給
し、特に良質なものを必要とする部門では供給された純
水を更に純水装置に通して水質を向上させている。[Prior Art] Pure water used in semiconductor device manufacturing factories is
Generally, each department is supplied from the pure water production department that serves the entire factory, and in departments that require particularly high quality water, the supplied pure water is further passed through a water purifier to improve its water quality.
【０００４】この純水装置は、純水製造用のイオン交換
樹脂を詰めた複数の例えば２個のイオン交換樹脂塔を備
えるものであり、その２個の中の一方に通水し他方を待
機させるように使用して、水質が向上した純水の供給を
途絶えさせないようにする。即ち、通水中である第１の
イオン交換樹脂塔のイオン交換樹脂が所定まで劣化した
ら通水を第２のイオン交換樹脂塔に切り替え、第１のイ
オン交換樹脂塔を新たなイオン交換樹脂に詰め替えて次
の切り替えに待機させる。This water purifier is equipped with a plurality of, for example, two ion exchange resin towers filled with ion exchange resin for producing pure water, and water is passed through one of the two while the other is on standby. water to ensure that the supply of purified water with improved water quality remains uninterrupted. That is, when the ion exchange resin in the first ion exchange resin tower that is being passed through water deteriorates to a predetermined level, the water flow is switched to the second ion exchange resin tower, and the first ion exchange resin tower is refilled with new ion exchange resin. to wait for the next change.
【０００５】上述したイオン交換樹脂の劣化の測定は、
そのイオン交換樹脂塔を通した純水の定期的な評価によ
って行う。その評価には、例えば、その純水に清浄な半
導体ウエーハを浸漬して、ウエーハ表面の吸着物を原子
吸光分析により定量したり、ウエーハに素子例えばＭＯ
Ｓダイオードを形成して素子特性例えば耐圧を評価した
りする方法を採用している。The measurement of the deterioration of the ion exchange resin described above is as follows:
This is done by periodic evaluation of pure water passing through the ion exchange resin column. For this evaluation, for example, a clean semiconductor wafer is immersed in the pure water, and adsorbed substances on the wafer surface are determined by atomic absorption spectrometry.
A method is adopted in which an S diode is formed and the device characteristics, such as withstand voltage, are evaluated.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記新
たなイオン交換樹脂の中には、最初から純水化機能の不
良なロットが存在することがあり、その不良ロットのイ
オン交換樹脂を上記詰め替えに用いた場合には、そのイ
オン交換樹脂塔は、待機から通水に切り替えた際に水質
が所望に向上されない純水を供給する異常事態となる。[Problem to be Solved by the Invention] However, among the above-mentioned new ion exchange resins, there may be a lot with a defective water purification function from the beginning. If used, the ion exchange resin tower will be in an abnormal situation where it will supply pure water whose water quality is not improved as desired when switching from standby to water flow.
【０００７】そしてこの異常事態は、上述した純水の評
価に長時間を要するため、その結果がでるまで劣悪な半
導体装置を製造させる。そこで本発明は、半導体装置の
製造方法、特に半導体装置の製造に用いる純水の供給方
法に関し、水質が所望に向上されない純水を供給する異
常事態の発生をなくするために、新たなイオン交換樹脂
の中に不良ロットが存在しても、その不良ロットのイオ
ン交換樹脂がイオン交換樹脂塔への詰め替えに用いられ
ないようにする方法の提供を目的とする。[0007] In this abnormal situation, since the above-mentioned evaluation of pure water requires a long time, inferior semiconductor devices are manufactured until the results are obtained. Therefore, the present invention relates to a method for manufacturing semiconductor devices, particularly a method for supplying pure water used in manufacturing semiconductor devices, and in order to eliminate the occurrence of an abnormal situation in which pure water is supplied where the water quality is not improved as desired, a new ion exchange method is proposed. To provide a method for preventing ion exchange resin from a defective lot from being used for refilling an ion exchange resin column even if a defective lot exists in the resin.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明の半導体装置の製造方法においては、半導体
装置の製造に用いる純水を作るためのイオン交換樹脂塔
とは別に、該イオン交換樹脂塔より小さな小型イオン交
換樹脂塔を用意し、新たなロットのイオン交換樹脂を使
用するべく該イオン交換樹脂塔に詰める以前に、該ロッ
トの一部を該小型イオン交換樹脂塔に詰めて純水を作り
、該純水の評価により該ロットの良否を判定して、良と
判定されたロットのイオン交換樹脂のみを使用の対象に
することを特徴としている。[Means for Solving the Problems] In order to achieve the above object, in the method for manufacturing a semiconductor device of the present invention, in addition to an ion exchange resin column for producing pure water used in manufacturing a semiconductor device, an ion exchange resin column is provided. A small ion exchange resin tower smaller than the exchange resin tower is prepared, and before a new lot of ion exchange resin is packed into the ion exchange resin tower for use, a part of the lot is packed into the small ion exchange resin tower. The method is characterized in that pure water is produced, the quality of the lot is determined by evaluating the pure water, and only the ion exchange resin of the lot determined to be good is used.
【０００９】[0009]
【作用】上記の構成によれば、新たなイオン交換樹脂は
、使用に先立ちロット毎に良否が確認されて、不良ロッ
トのイオン交換樹脂が上記イオン交換樹脂塔への詰め替
えから除外される。このことから、このイオン交換樹脂
塔は、水質が所望に向上されない純水を供給する異常事
態の発生がなくなる。[Operation] According to the above structure, the quality of new ion exchange resin is checked for each lot before use, and defective lots of ion exchange resin are excluded from being refilled into the ion exchange resin tower. As a result, this ion exchange resin column eliminates the occurrence of abnormal situations in which pure water is supplied whose water quality is not improved as desired.
【００１０】0010
【実施例】以下本発明の実施例について図１の構成図を
用いて説明する。同図において、１は工場共通純水配管
、２Ａ， ２Ｂはイオン交換樹脂塔、３は小型イオン交
換樹脂塔、４はバルブ、５は処理槽、６は半導体ウエー
ハ、である。Embodiments An embodiment of the present invention will be described below with reference to the configuration diagram of FIG. In the figure, 1 is a common pure water pipe for the factory, 2A and 2B are ion exchange resin towers, 3 is a small ion exchange resin tower, 4 is a valve, 5 is a processing tank, and 6 is a semiconductor wafer.
【００１１】工場共通純水配管１は、先に述べた工場全
体を賄う純水製造部門からの純水配管である。イオン交
換樹脂塔２Ａ， ２Ｂは、半導体装置の製造に必要な特
に良質な純水を供給するための先に述べた純水装置を構
成するものであり、配管１からの純水を通してその水質
を向上させる。２個の使い分けは先に述べた通りであり
、それぞれの容量は例えば ２００リットル程度である
。The factory common pure water pipe 1 is a pure water pipe from the pure water production department that serves the entire factory mentioned above. The ion exchange resin towers 2A and 2B constitute the above-mentioned pure water equipment for supplying especially high-quality pure water necessary for manufacturing semiconductor devices, and the water quality is improved by passing the pure water from the pipe 1. Improve. The usage of the two is as described above, and the capacity of each is, for example, about 200 liters.
【００１２】小型イオン交換樹脂塔３は、本発明により
用意した容量１０リットル程度のイオン交換樹脂塔であ
り、イオン交換樹脂塔２Ａ， ２Ｂと同様に配管１から
の純水を通し、その純水を処理槽５に供給する。The small ion exchange resin tower 3 is an ion exchange resin tower with a capacity of about 10 liters prepared according to the present invention, and like the ion exchange resin towers 2A and 2B, it passes the pure water from the pipe 1 and collects the pure water. is supplied to the processing tank 5.
【００１３】バルブ４は、イオン交換樹脂塔２Ａ， ２
Ｂや小型イオン交換樹脂塔３に対する通水の制御用であ
る。処理槽５は、半導体装置の製造に直接関与しない独
立したものであり、小型イオン交換樹脂塔３を通した純
水の評価用として、その純水に半導体ウエーハ６を浸漬
するのに用いる。[0013] The valve 4 connects the ion exchange resin towers 2A, 2
This is for controlling water flow to B and the small ion exchange resin tower 3. The processing tank 5 is independent and is not directly involved in the manufacture of semiconductor devices, and is used to immerse the semiconductor wafer 6 in the pure water that has passed through the small ion exchange resin column 3 for evaluation.
【００１４】さて、本発明では、詰め替え用として入手
した新たなロットのイオン交換樹脂をイオン交換樹脂塔
２Ａ， ２Ｂに詰める以前に、そのロットの一部を小型
イオン交換樹脂塔３に詰めて配管１からの純水を通した
純水を作り、その純水の評価により当該ロットの良否を
判定して、良と判定されたロットのイオン交換樹脂のみ
をイオン交換樹脂塔２Ａ， ２Ｂへの詰め替え用として
使用する。その際の純水の評価は、先に述べたイオン交
換樹脂の劣化の測定に用いる純水の評価方法を採用して
、良否の判定基準を上記劣化の判定基準より厳しくして
ある。このことにより、イオン交換樹脂塔２Ａ， ２Ｂ
は、水質が所望に向上されない純水を供給するという異
常事態を発生することがなくなる。Now, in the present invention, before a new lot of ion exchange resin obtained for refilling is packed into the ion exchange resin columns 2A, 2B, a part of the lot is packed into the small ion exchange resin column 3 and piped. Pure water is made by passing the pure water from step 1, and the quality of the lot is determined by evaluating the pure water, and only the ion exchange resin of the lot determined to be good is refilled into the ion exchange resin towers 2A and 2B. to be used for purposes. The pure water evaluation method used for measuring the deterioration of the ion exchange resin described above is used to evaluate the pure water at this time, and the criteria for determining pass/fail are made stricter than the criteria for determining the deterioration described above. As a result, the ion exchange resin towers 2A, 2B
This eliminates the occurrence of an abnormal situation in which pure water whose water quality is not improved as desired is supplied.
【００１５】また、この純水の評価方法は結果がでるま
でに長時間を必要とするが、一つのロットの良否判定時
点とイオン交換樹脂塔２Ａ， ２Ｂに詰める時点との間
に時間余裕をとることができるので、或るロットが不良
と判定されても次の良ロットがイオン交換樹脂塔２Ａ，
２Ｂの詰め替え時点に間に合い、イオン交換樹脂塔２
Ａと２Ｂの間の通水切り替えが、所望する純水の供給を
途絶えさせないようにする。[0015] Furthermore, although this method of evaluating pure water requires a long time to obtain results, it is possible to provide enough time between the time of judging the quality of one lot and the time of filling it into the ion exchange resin towers 2A and 2B. Therefore, even if a certain lot is determined to be defective, the next good lot will be transferred to the ion exchange resin column 2A,
In time for refilling 2B, the ion exchange resin tower 2
To prevent interruption of supply of desired pure water by switching water flow between A and 2B.
【００１６】[0016]
【発明の効果】以上説明したように本発明によれば、半
導体装置の製造方法、特に半導体装置の製造に用いる純
水の供給方法に関し、新たなイオン交換樹脂の中に不良
ロットが存在しても、その不良ロットのイオン交換樹脂
がイオン交換樹脂塔への詰め替えに用いられないように
する方法が提供されて、水質が所望に向上されない純水
が供給される異常事態の発生を防止させる効果がある。[Effects of the Invention] As explained above, according to the present invention, there is a defective lot in a new ion exchange resin in a method for manufacturing a semiconductor device, particularly in a method for supplying pure water used in manufacturing a semiconductor device. Also, a method is provided to prevent the defective lot of ion exchange resin from being used for refilling the ion exchange resin tower, which has the effect of preventing the occurrence of an abnormal situation in which pure water whose water quality is not improved as desired is supplied. There is.
【図１】 実施例を説明するための構成図[Figure 1] Block diagram for explaining the embodiment
１ 工場共通純水配管 ２Ａ， ２Ｂ イオン交換樹脂塔 ３ 小型イオン交換樹脂塔 ４ バルブ ５ 処理槽 ６ 半導体ウエーハ 1 Factory common pure water piping 2A, 2B Ion exchange resin tower 3. Small ion exchange resin tower 4 Valve 5 Processing tank 6 Semiconductor wafer
Claims (1)
ためのイオン交換樹脂塔（２Ａ，２Ｂ） とは別に、該
イオン交換樹脂塔（２Ａ，２Ｂ） より小さな小型イオ
ン交換樹脂塔（３） を用意し、新たなロットのイオン
交換樹脂を使用するべく該イオン交換樹脂塔（２Ａ，２
Ｂ） に詰める以前に、該ロットの一部を該小型イオン
交換樹脂塔（３） に詰めて純水を作り、該純水の評価
により該ロットの良否を判定して、良と判定されたロッ
トのイオン交換樹脂のみを使用の対象にすることを特徴
とする半導体装置の製造方法。Claim 1: In addition to the ion exchange resin towers (2A, 2B) for producing pure water used in the manufacture of semiconductor devices, the ion exchange resin towers (2A, 2B) have a smaller ion exchange resin tower (3). In order to use a new lot of ion exchange resin, the ion exchange resin towers (2A, 2
B) Before packing, a part of the lot is packed into the small ion exchange resin tower (3) to make pure water, and the quality of the lot is determined by evaluating the pure water, and it is determined to be good. A method for manufacturing a semiconductor device, characterized in that only a lot of ion exchange resin is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4856291A JPH04284887A (en) | 1991-03-14 | 1991-03-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4856291A JPH04284887A (en) | 1991-03-14 | 1991-03-14 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04284887A true JPH04284887A (en) | 1992-10-09 |
Family
ID=12806831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4856291A Withdrawn JPH04284887A (en) | 1991-03-14 | 1991-03-14 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04284887A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5722442A (en) * | 1994-01-07 | 1998-03-03 | Startec Ventures, Inc. | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
| JP2009112944A (en) * | 2007-11-06 | 2009-05-28 | Kurita Water Ind Ltd | Ultrapure water production method and apparatus, and washing method and apparatus for electronic component members |
| JP2009112945A (en) * | 2007-11-06 | 2009-05-28 | Kurita Water Ind Ltd | Ultrapure water production method and apparatus, and washing method and apparatus for electronic component members |
| JP2011143403A (en) * | 2010-01-14 | 2011-07-28 | Culligan Internatl Co | System and method for controlling multiple-sized water softening tanks |
-
1991
- 1991-03-14 JP JP4856291A patent/JPH04284887A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5722442A (en) * | 1994-01-07 | 1998-03-03 | Startec Ventures, Inc. | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
| JP2009112944A (en) * | 2007-11-06 | 2009-05-28 | Kurita Water Ind Ltd | Ultrapure water production method and apparatus, and washing method and apparatus for electronic component members |
| JP2009112945A (en) * | 2007-11-06 | 2009-05-28 | Kurita Water Ind Ltd | Ultrapure water production method and apparatus, and washing method and apparatus for electronic component members |
| JP2011143403A (en) * | 2010-01-14 | 2011-07-28 | Culligan Internatl Co | System and method for controlling multiple-sized water softening tanks |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |