JPH04280888A - Removal of metal reacted and attached to sic surface - Google Patents
Removal of metal reacted and attached to sic surfaceInfo
- Publication number
- JPH04280888A JPH04280888A JP3068997A JP6899791A JPH04280888A JP H04280888 A JPH04280888 A JP H04280888A JP 3068997 A JP3068997 A JP 3068997A JP 6899791 A JP6899791 A JP 6899791A JP H04280888 A JPH04280888 A JP H04280888A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- metal
- acid
- reaction
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Sliding-Contact Bearings (AREA)
- Ceramic Products (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はＳｉＣの表面に溝を加工
するためのステンレス鋼等によるＳｉＣ表面の溝加工方
法において、ＳｉＣと高温反応したステンレス鋼等の金
属およびその反応層を除去する方法に関するものである
。[Industrial Application Field] The present invention relates to a method for forming grooves on the surface of SiC using stainless steel, etc., in which a metal such as stainless steel that has reacted with SiC at high temperature and its reaction layer are removed. It is related to.
【０００２】0002
【従来技術および解決しようとする課題】一般に、Ｓｉ
Ｃは耐腐食性、耐摩耗性、耐熱性等を有しているので、
広く回転機械部品のメカニカルシール、軸受等の摺動部
品である摺動部材として用いられている。そして、メカ
ニカルシールにおいては、摺動面に溝加工を施しておけ
ば、回転部分からの漏れを防止することができる。[Prior art and problems to be solved] Generally, Si
Since C has corrosion resistance, abrasion resistance, heat resistance, etc.
It is widely used as mechanical seals for rotating machine parts, sliding members such as bearings, etc. In mechanical seals, if the sliding surface is grooved, leakage from rotating parts can be prevented.
【０００３】また、軸受に溝加工を施しておけば、装置
内部の流体を軸受作動流体として用いることができ、装
置の構造をコンパクト化および省エネルギー化すること
ができることが知られている。It is also known that if the bearing is grooved, the fluid inside the device can be used as the bearing working fluid, thereby making the structure of the device more compact and energy saving.
【０００４】この場合、ＳｉＣ表面に溝加工する方法と
して、ＳｉＣ表面にステンレス鋼又は、ニッケル等を接
触させてＳｉＣとステンレス鋼又はニッケル等とを高温
反応させて、この反応生成物を機械的に除去することに
よって、ＳｉＣ表面にステンレス鋼又はニッケル等のレ
イアウトに応じた溝を加工する方法が考案されている。In this case, the method for forming grooves on the SiC surface involves bringing stainless steel, nickel, etc. into contact with the SiC surface, causing a high-temperature reaction between the SiC and the stainless steel, nickel, etc., and then mechanically removing the reaction product. A method has been devised in which grooves are formed on the SiC surface according to the layout of stainless steel, nickel, etc. by removing the metal.
【０００５】この溝加工の方法はきわめて安価に、しか
も短時間に行うことができ、きわめてすぐれた加工方法
であるが、摺動材に機械的応力が加わるため形成される
溝にクラックや欠け等が発生し、また、溝の底面に少量
の金属元素が残留するため所定形状の溝が得られないと
いう問題点を有していた。[0005] This groove processing method can be performed at an extremely low cost and in a short time, and is an excellent processing method. However, since mechanical stress is applied to the sliding material, the grooves formed may be cracked or chipped. Furthermore, since a small amount of the metal element remains on the bottom surface of the groove, it is difficult to obtain a groove of a predetermined shape.
【０００６】本発明の目的は、摺動材に機械的応力を加
えずに金属および、ＳｉＣと金属との反応生成物よりな
る反応層を容易に除去することができるＳｉＣ表面に反
応付着した金属の除去方法を提供することにある。[0006] An object of the present invention is to remove the metal reactively adhered to the SiC surface so that the metal and the reaction layer consisting of the reaction product of SiC and the metal can be easily removed without applying mechanical stress to the sliding material. The purpose is to provide a method for removing.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
め、本発明は、表面に金属が反応付着したＳｉＣ質セラ
ミックスを、酸の中に浸漬して金属および反応生成物を
除去し、また前記酸がフッ化水素酸であり、また前記酸
が塩酸であるという手段を採用したものである。[Means for Solving the Problems] In order to achieve the above object, the present invention involves removing metals and reaction products by immersing SiC ceramics on the surface of which metals have been reaction-adhered in an acid. The method employs a method in which the acid is hydrofluoric acid and the acid is hydrochloric acid.
【０００８】[0008]
【作用】本発明は上記の手段を採用したことにより、機
械的応力を加えずに、容易に金属およびＳｉＣと金属と
の反応生成物よりなる反応層を除去することができる。[Operation] By employing the above-mentioned means, the present invention can easily remove metals and reaction layers made of reaction products of SiC and metals without applying mechanical stress.
【０００９】[0009]
【実施例】以下、本発明の実施例について説明する。ま
ず、表面に金属が反応付着したＳｉＣ質セラミックスを
酸の水溶液中に所定の時間浸漬する。この処理によって
、ＳｉＣの表面に反応付着した金属および反応生成物よ
りなる反応層は酸に溶解して除去され、ＳｉＣの表面に
前記金属のレイアウトに応じた溝が形成される。[Examples] Examples of the present invention will be described below. First, a SiC ceramic having a metal reaction-adhered to its surface is immersed in an aqueous acid solution for a predetermined period of time. Through this treatment, the reaction layer consisting of the metal and reaction products adhering to the surface of the SiC is dissolved in acid and removed, and grooves corresponding to the layout of the metal are formed on the surface of the SiC.
【００１０】〔実施例−１〕金属（０．０１２６ｇ）を
ＳｉＣ（３．９７１４ｇ）表面に反応付着させた試料（
３．９８４０ｇ）をフッ化水素酸に浸漬する。このフッ
化水素酸の量は、試料が覆われる程度とした。そして、
常温で２４時間放置した後、重量の測定を行ったところ
全体として０．０１６６ｇ重量が減少した。また、金属
および反応層が除去され、溝が形成されていた。なお、
ＳｉＣのみをフッ化水素酸中に同時間浸漬してもＳｉＣ
に重量減少や腐食は起こらなかった。[Example-1] A sample in which metal (0.0126 g) was reacted and attached to the surface of SiC (3.9714 g) (
3.9840 g) in hydrofluoric acid. The amount of hydrofluoric acid was set to such an extent that the sample was covered. and,
After being left at room temperature for 24 hours, the weight was measured and the weight decreased by 0.0166g as a whole. Also, the metal and reaction layer were removed and grooves were formed. In addition,
Even if only SiC is immersed in hydrofluoric acid for the same time, SiC
No weight loss or corrosion occurred.
【００１１】〔実施例−２〕金属（０．０１２６ｇ）を
ＳｉＣ（３．９５７４ｇ）表面に反応付着させた試料（
３．９７００ｇ）を希塩酸に浸漬する。この希塩酸の量
は、試料が覆われる程度とした。そして、常温で１４日
間放置した後、重量の測定を行ったところ全体として０
．０１６９ｇ重量が減少した。また、金属および反応層
が除去され、溝が形成されていた。なお、ＳｉＣのみを
希塩酸中に同時間浸漬してもＳｉＣに重量減少や腐食は
起こらなかった。[Example-2] A sample (
3.9700g) is immersed in dilute hydrochloric acid. The amount of dilute hydrochloric acid was set to such an extent that the sample was covered. After being left at room temperature for 14 days, the weight was measured and the overall result was 0.
．． Weight decreased by 0169g. Also, the metal and reaction layer were removed and grooves were formed. Note that even when only SiC was immersed in dilute hydrochloric acid for the same period of time, no weight loss or corrosion occurred in SiC.
【００１２】また、希塩酸の温度を６０℃以上として浸
漬した場合、金属（０．０１１９ｇ）をＳｉＣ（３．９
５３２ｇ）表面に反応付着させた試料（３．９６４８ｇ
）は２４時間後、０．０１６６ｇの重量減少があり、溝
が形成されていた。[0012] When immersed in dilute hydrochloric acid at a temperature of 60°C or higher, metal (0.0119g) was immersed in SiC (3.9g).
532g) Sample (3.9648g) reaction-adhered to the surface
) had a weight decrease of 0.0166 g after 24 hours, and grooves were formed.
【００１３】[0013]
【発明の効果】本発明は前記のように構成したことによ
り、ＳｉＣ質セラミックスの表面に反応付着した金属お
よび反応層を酸の中に浸漬するだけで容易に除去するこ
とができる。また、機械的に前記金属および反応層を除
去する方法のように金属元素が残留することがなく、し
かも、機械的な応力を加えずに溝加工をおこなうことが
できるというすぐれた効果を有するものである。By virtue of the present invention having the above-described structure, metals and reaction layers that have been reaction-adhered to the surface of SiC ceramics can be easily removed by simply immersing them in acid. In addition, unlike the method of mechanically removing the metal and the reaction layer, there is no residual metal element, and it has the excellent effect of being able to process grooves without applying mechanical stress. It is.
Claims (3)
ラミックスを、酸の中に浸漬して金属および反応生成物
を除去することを特徴とするＳｉＣ表面に反応付着した
金属の除去方法。1. A method for removing metals reactively adhered to a SiC surface, which comprises immersing SiC ceramics having metals reactively adhered to the surface in an acid to remove metals and reaction products.
記載のＳｉＣ表面に反応付着した金属の除去方法。2. Claim 1, wherein the acid is hydrofluoric acid.
A method for removing metal reactively attached to a SiC surface as described above.
ｉＣ表面に反応付着した金属の除去方法。3. The S according to claim 1, wherein the acid is hydrochloric acid.
A method for removing metal that has reacted and adhered to the iC surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3068997A JPH04280888A (en) | 1991-03-08 | 1991-03-08 | Removal of metal reacted and attached to sic surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3068997A JPH04280888A (en) | 1991-03-08 | 1991-03-08 | Removal of metal reacted and attached to sic surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04280888A true JPH04280888A (en) | 1992-10-06 |
Family
ID=13389813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3068997A Pending JPH04280888A (en) | 1991-03-08 | 1991-03-08 | Removal of metal reacted and attached to sic surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04280888A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001025167A1 (en) * | 1999-10-01 | 2001-04-12 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| WO2002009161A2 (en) * | 2000-07-24 | 2002-01-31 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning ceramic articles |
-
1991
- 1991-03-08 JP JP3068997A patent/JPH04280888A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001025167A1 (en) * | 1999-10-01 | 2001-04-12 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| US6565667B2 (en) | 1999-10-01 | 2003-05-20 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| US6723437B2 (en) | 1999-10-01 | 2004-04-20 | Saint-Gobain Ceramics & Plastics, Inc. | Semiconductor processing component having low surface contaminant concentration |
| WO2002009161A2 (en) * | 2000-07-24 | 2002-01-31 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning ceramic articles |
| WO2002009161A3 (en) * | 2000-07-24 | 2002-06-13 | Saint Gobain Ceramics | Process for cleaning ceramic articles |
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