JPH04280483A - Magnetic resistant effect material and manufacture thereof - Google Patents
Magnetic resistant effect material and manufacture thereofInfo
- Publication number
- JPH04280483A JPH04280483A JP3043305A JP4330591A JPH04280483A JP H04280483 A JPH04280483 A JP H04280483A JP 3043305 A JP3043305 A JP 3043305A JP 4330591 A JP4330591 A JP 4330591A JP H04280483 A JPH04280483 A JP H04280483A
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- 239000000463 material Substances 0.000 title claims abstract description 19
- 230000000694 effects Effects 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 37
- 238000010030 laminating Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 230000005389 magnetism Effects 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910017061 Fe Co Inorganic materials 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は磁気媒体より信号を読み
とるための磁気抵抗効果材料に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive material for reading signals from a magnetic medium.
【０００２】0002
【従来の技術】従来より磁気抵抗素子を用いた磁気抵抗
センサ−（以下ＭＲセンサ−という）、磁気抵抗ヘッド
（以下ＭＲヘッドという）の開発が進められており、磁
性体には主にＮｉ０．８Ｆｅ０．２のパ−マロイが用い
られている。ただしこの材料の場合は抵抗変化率（以下
ΔＲ／Ｒと記す）が２．５％程度であり、より高感度な
磁気抵抗素子をうるにはよりΔＲ／Ｒの大きなものが求
められて来た。2. Description of the Related Art Conventionally, magnetoresistive sensors (hereinafter referred to as MR sensors) and magnetoresistive heads (hereinafter referred to as MR heads) using magnetoresistive elements have been developed, and the magnetic materials mainly include Ni0. Permalloy of 8Fe0.2 is used. However, in the case of this material, the rate of change in resistance (hereinafter referred to as ΔR/R) is about 2.5%, and in order to obtain a magnetoresistive element with higher sensitivity, a material with a larger ΔR/R has been required. .
【０００３】近年［Ｆｅ／Ｃｒ］人工格子膜で大きな磁
気抵抗効果が起きることが発見された（Ｐｈｙｓｉｃａ
ｌ Ｒｅｖｉｅｗ Ｌｅｔｔｅｒ Ｖｏｌ．６１， ｐ
２４７２， １９８８）が、この材料の場合は十数ｋＯ
ｅ以上の大きな磁界を印加しないと大きなΔＲ／Ｒが得
られず、実用性に難点があった。In recent years, it has been discovered that a large magnetoresistive effect occurs in [Fe/Cr] superlattice films (Physica
l Review Letter Vol. 61, p.
2472, 1988), but in the case of this material, the
Unless a large magnetic field greater than e is applied, a large ΔR/R cannot be obtained, which poses a problem in practicality.
【０００４】また、超高真空蒸着装置を用いＮｉ０．８
Ｆｅ０．２（３０Å）／Ｃｕ（５０Å）／Ｃｏ（３０Å
）／Ｃｕ（５０Å）×１５層の人工格子膜でΔＲ／Ｒが
約１０％（３ｋＯｅの磁界を印加）の抵抗変化が観測さ
れた報告がある。（１９９０年秋 応用物理学会
予稿）しかしながら、膜を製作するのに高価な超高真空
蒸着装置が必要なことと、やはり３ｋＯｅ程度の大きな
磁界を印加しないと大きなΔＲ／Ｒが得られない。[0004] Also, using an ultra-high vacuum evaporation apparatus, Ni0.8
Fe0.2(30Å)/Cu(50Å)/Co(30Å
)/Cu (50 Å) x 15 layers of an artificial lattice film, there is a report that a resistance change of ΔR/R of about 10% (with a magnetic field of 3 kOe applied) was observed. (Autumn 1990 Japan Society of Applied Physics
(Preliminary draft) However, an expensive ultra-high vacuum evaporation device is required to fabricate the film, and a large ΔR/R cannot be obtained unless a large magnetic field of about 3 kOe is applied.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記の問題点
を解決し、実用性のある低磁界でより大きなΔＲ／Ｒを
示す磁気抵抗素子を可能とするものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems and enables a practical magnetoresistive element that exhibits a larger ΔR/R in a low magnetic field.
【０００６】[0006]
【課題を解決するための手段】上記の課題を解決するた
めに本発明の磁気抵抗効果材料は以下の構成とする。す
なわち、スパッタ装置を用いてＣｏを主成分とし厚さが
１０〜１００Åの第一の磁性薄膜層と（ＮｉＸＦｅＹ）
ＣｏＺを主成分とし厚さが１０〜１００Åの第二の磁性
薄膜層とをＣｕを主成分とし厚さが１０〜３５Åの金属
非磁性薄膜層を介して交互に積層して磁気抵抗効果材料
を構成する。[Means for Solving the Problems] In order to solve the above problems, the magnetoresistive material of the present invention has the following structure. That is, a first magnetic thin film layer containing Co as a main component and having a thickness of 10 to 100 Å was formed using a sputtering device (NiXFeY).
A second magnetic thin film layer mainly composed of CoZ and having a thickness of 10 to 100 Å is alternately laminated via a metal nonmagnetic thin film layer mainly composed of Cu and having a thickness of 10 to 35 Å to produce a magnetoresistive material. Configure.
【０００７】ここでＸ、Ｙ、Ｚはそれぞれ、０．６≦Ｘ
≦０．９、０≦Ｙ≦０．３、０．０１≦Ｚ≦０．３であ
る。[0007] Here, X, Y, and Z are each 0.6≦X
≦0.9, 0≦Y≦0.3, 0.01≦Z≦0.3.
【０００８】[0008]
【作用】（図１）において、磁性薄膜層１と磁性薄膜層
３は保磁力が異なりかつ金属非磁性薄膜層２によって分
離されているため、（図１ｂ）に示したように弱い磁界
が印加されると軟磁性の磁性薄膜層３のスピンがまずそ
の方向に回転し、半硬質磁性の磁性薄膜層１のスピンは
まだ反転しない状態が生ずる。従ってこの時磁性薄膜層
１と磁性薄膜層３のスピン配列が互いに逆方向となり伝
導電子のスピン散乱が極大となって大きな磁気抵抗を示
す。更に（図１ｃ）に示したように印加磁界を強くする
と磁性薄膜層１のスピンも反転し磁性薄膜層３と磁性薄
膜層１のスピン配列は平行となり伝導電子のスピン散乱
が小さくなり磁気抵抗は減少する。この様にして大きな
ΔＲ／Ｒが得られる訳であるが、金属非磁性薄膜層２が
無いと磁性薄膜層１と磁性薄膜層３は磁気的にカップリ
ングしてしまい（図１ｂ）のような状態が実現できない
ため大きな磁気抵抗効果は得られない。磁性膜層３は軟
磁性を示すこととＮｉ−Ｆｅ膜より磁気抵抗効果の大き
なことが望ましく、これは磁性膜層３にＮｉ−Ｆｅ−Ｃ
ｏを用いることにより可能となり膜全体のΔＲ／Ｒが向
上される。[Operation] In (Fig. 1), since the magnetic thin film layer 1 and the magnetic thin film layer 3 have different coercive forces and are separated by the metal non-magnetic thin film layer 2, a weak magnetic field is applied as shown in (Fig. 1b). When this occurs, the spin of the soft magnetic thin film layer 3 first rotates in that direction, and a state arises in which the spin of the semi-hard magnetic thin film layer 1 has not yet been reversed. Therefore, at this time, the spin alignments of the magnetic thin film layer 1 and the magnetic thin film layer 3 are in opposite directions, and the spin scattering of conduction electrons becomes maximum, resulting in a large magnetoresistance. Furthermore, as shown in Figure 1c, when the applied magnetic field is strengthened, the spin of the magnetic thin film layer 1 is also reversed, and the spin alignments of the magnetic thin film layer 3 and the magnetic thin film layer 1 become parallel, and the spin scattering of conduction electrons becomes smaller, and the magnetoresistance increases. Decrease. In this way, a large ΔR/R can be obtained, but without the metal nonmagnetic thin film layer 2, the magnetic thin film layer 1 and the magnetic thin film layer 3 would be magnetically coupled (Fig. 1b). Since the state cannot be realized, a large magnetoresistive effect cannot be obtained. It is desirable that the magnetic film layer 3 exhibits soft magnetism and has a larger magnetoresistive effect than the Ni-Fe film.
This becomes possible by using o, and the ΔR/R of the entire film is improved.
【０００９】[0009]
【実施例】磁性薄膜層１はＣｏを主成分とするもので、
半硬質磁性を示す。[Example] The magnetic thin film layer 1 is mainly composed of Co.
Exhibits semi-hard magnetism.
【００１０】磁性薄膜層３のＮｉ−ｒｉｃｈのＮｉ−Ｆ
ｅ−Ｃｏ系合金はその組成比は（ＮｉＸＦｅＹ）ＣｏＺ
を主成分とし、Ｘ、Ｙ、Ｚはそれぞれ原子組成比で、０
．６≦Ｘ≦０．９、０≦Ｙ≦０．３、０≦Ｚ≦０．３を
満足する組成領域で磁歪が小さく軟磁性を示し、より好
ましくは０．６≦Ｘ≦０．９、０＜Ｙ≦０．２５、０＜
Ｚ≦０．２５である。又磁気抵抗効果を考慮すると、Ｎ
ｉ−Ｆｅ系よりもＮｉ−Ｆｅ−Ｃｏ系の方が膜全体とし
てのΔＲ／Ｒが大きくなり０．０１≦Ｚとする必要があ
る。これらの条件を満足する代表的なものはＮｉ０．８
Ｆｅ０．１５Ｃｏ０．０５である。又更に軟磁性を改良
したり耐摩耗性及び耐食性を改良するためにＮｂ，Ｍｏ
，Ｃｒ，Ｗ，Ｒｕ等を添加しても良い。これら磁性薄膜
層はその厚さが１０Å未満ではキュリ−温度の低下によ
る室温での磁化の低減等が問題となり、又実用上磁気抵
抗素子は全膜厚が数百Åで用いられるため、本発明のよ
うに積層効果を利用するには各磁性薄膜層を少なくとも
１００Å以下にする必要がある。従ってこれら磁性薄膜
層の厚さはは１０〜１００Åとすることが望ましい。Ni-rich Ni-F of the magnetic thin film layer 3
The composition ratio of e-Co alloy is (NiXFeY)CoZ
is the main component, and X, Y, and Z are each atomic composition ratios, and 0
．． Magnetostriction is small and soft magnetism is exhibited in the composition range satisfying 6≦X≦0.9, 0≦Y≦0.3, 0≦Z≦0.3, more preferably 0.6≦X≦0.9, 0<Y≦0.25, 0<
Z≦0.25. Also, considering the magnetoresistive effect, N
The ΔR/R of the entire film is larger in the Ni-Fe-Co system than in the i-Fe system, and it is necessary to satisfy 0.01≦Z. A typical material that satisfies these conditions is Ni0.8
Fe0.15Co0.05. Furthermore, Nb and Mo are added to improve soft magnetism, wear resistance and corrosion resistance.
, Cr, W, Ru, etc. may be added. If the thickness of these magnetic thin film layers is less than 10 Å, problems such as a decrease in magnetization at room temperature due to a decrease in the Curie temperature will occur, and in practice, magnetoresistive elements are used with a total film thickness of several hundred Å. In order to utilize the lamination effect as shown in FIG. Therefore, the thickness of these magnetic thin film layers is preferably 10 to 100 Å.
【００１１】これらの磁性薄膜の間に介在させる金属薄
膜はＮｉ−Ｆｅ−Ｃｏ系磁性薄膜と界面での反応が少な
くかつ非磁性であることが必要で、Ｃｕが適している。
このＣｕ層の厚さは２０Åぐらいが最適で、１０Å未満
では２種類の磁性薄膜層が磁気的にカップリングをして
（図１ｂ）のように保磁力の異なる磁性薄膜層１と３の
スピンが反平行となる状態の実現が困難となる。又理由
はさだかでないが以下に述べる（実施例１）の（図２）
のようにΔＲ／Ｒの値はＣｕ層の厚さによって（ＲＫＫ
Ｙ的な）振動を示し、３５Åを越えると極大の第２ピ−
クを越えて磁気抵抗効果が低減し、極大の第１ピ−クま
でを利用する場合はＣｕ層の厚さは２５Å以下とするこ
とがより望ましい。The metal thin film interposed between these magnetic thin films needs to be non-magnetic and have little reaction at the interface with the Ni-Fe-Co magnetic thin film, and Cu is suitable. The optimal thickness of this Cu layer is about 20 Å, and if it is less than 10 Å, the two types of magnetic thin film layers will magnetically couple, resulting in the spin of magnetic thin film layers 1 and 3 with different coercive forces, as shown in Figure 1b. It becomes difficult to realize a state in which the values are antiparallel. Although the reason is not obvious, the following (Example 1) (Figure 2)
The value of ΔR/R depends on the thickness of the Cu layer (RKK
(Y-like) vibration, and reaches a maximum second peak above 35 Å.
When the magnetoresistive effect is reduced beyond the peak and the maximum first peak is utilized, it is more desirable that the thickness of the Cu layer is 25 Å or less.
【００１２】以下具体的な実施例により本発明の効果の
説明を行う。
（実施例１）多元ＲＦスパッタ装置を用いて、タ−ゲッ
トとして、Ｃｏ、Ｃｕ、Ｎｉ０．８Ｆｅ０．１５Ｃｏ０
．０５を用いスパッタ装置内部を２×１０−７Ｔｏｒｒ
に排気した後、Ａｒガスを導入して８×１０−３Ｔｏｒ
ｒとし、スパッタ法により順次以下に示した構成の磁気
抵抗素子をガラス基板上に作製した。The effects of the present invention will be explained below using specific examples. (Example 1) Co, Cu, Ni0.8Fe0.15Co0 were used as targets using a multi-dimensional RF sputtering device.
．． The inside of the sputtering equipment was heated to 2 x 10-7 Torr using 05
After exhausting to 8×10-3 Torr, Ar gas was introduced.
r, and magnetoresistive elements having the configurations shown below were sequentially fabricated on a glass substrate by sputtering.
【００１３】
［Ｃｏ（３０）／Ｃｕ（０〜５０）／ＮｉＦｅＣｏ（３
０）／Ｃｕ（０〜５０）］（（ ）内は厚さ（Å）を表
わす）、又各膜厚はスパッタ時間とシャッタ−により制
御し、総厚約０．２μｍの膜を作製した。[Co(30)/Cu(0-50)/NiFeCo(3
0)/Cu(0-50)] (the numbers in parentheses represent the thickness (Å)), and each film thickness was controlled by the sputtering time and shutter to produce a film with a total thickness of about 0.2 μm.
【００１４】得られた磁気抵抗材料の特性を（図２）に
示した。なお、ΔＲ／Ｒは３００Ｏｅの印加磁界にて測
定した。（図２）より明らかなように、ΔＲ／Ｒの極大
値はＣｕ層が２０Å付近に存在し、次に第２の極大値は
Ｃｕ層が３０Å付近に存在し、更に第３の極大値はＣｕ
層が４０Å付近に存在していることが分かった。従って
最大のΔＲ／Ｒを得ようとすると、Ｃｕ層が２０Å付近
が最適となる。The properties of the obtained magnetoresistive material are shown in FIG. 2. Note that ΔR/R was measured with an applied magnetic field of 300 Oe. (Figure 2) As is clearer, the maximum value of ΔR/R exists near 20 Å for the Cu layer, the second maximum value exists for the Cu layer near 30 Å, and the third maximum value exists for the Cu layer near 30 Å. Cu
It was found that the layer exists around 40 Å. Therefore, in order to obtain the maximum ΔR/R, it is optimal for the Cu layer to be around 20 Å.
【００１５】（実施例２）ＲＦスパッタ装置を用いて、
タ−ゲットとして、Ｃｏ、Ｃｕ、Ｎｉ０．８Ｆｅ０．１
５Ｃｏ０．０５を用いＣｕ層の厚さを一定とし磁性層の
厚さを変えた膜をスパッタ法により（実施例１）と同様
に作製した。(Example 2) Using an RF sputtering device,
As targets, Co, Cu, Ni0.8Fe0.1
Films using 5Co0.05 were prepared in the same manner as in Example 1 by sputtering, in which the thickness of the Cu layer was constant and the thickness of the magnetic layer was varied.
【００１６】得られた膜の特性を（表１）に示した。The properties of the obtained film are shown in Table 1.
【００１７】[0017]
【表１】[Table 1]
【００１８】なお、参考までにＮｏ．Ｃと同じ構成で、
Ｎｉ０．８Ｆｅ０．１５Ｃｏ０．０５の代わりに従来材
料であるＮｉ０．８Ｆｅ０．２を使用した試料のΔＲ／
Ｒは８．８％であり、又Ｎｉ０．８Ｆｅ０．１９Ｃｏ０
．０１を使用した試料のΔＲ／Ｒは１２％であったこと
より、より大きなΔＲ／Ｒを得る観点からもＣｏが不可
欠である。[0018] For reference, No. With the same configuration as C,
ΔR/ of the sample using the conventional material Ni0.8Fe0.2 instead of Ni0.8Fe0.15Co0.05
R is 8.8%, and Ni0.8Fe0.19Co0
．． Since the ΔR/R of the sample using 01 was 12%, Co is essential from the viewpoint of obtaining a larger ΔR/R.
【００１９】[0019]
【発明の効果】以上説明したように本発明は高価な超高
真空蒸着装置を用いず、通常のスパッタ装置により作製
出来る事、又、ΔＲ／Ｒの極大値は従来Ｃｕ層が５０Å
付近に存在していたのに対し２０Å付近に存在し、室温
でかつ実用的な印加磁界で大きな磁気抵抗効果を示す磁
気抵抗素子を可能とするもので、高感度ＭＲヘッドやＭ
Ｒセンサ−等への応用に適したものである。[Effects of the Invention] As explained above, the present invention can be manufactured using a normal sputtering device without using an expensive ultra-high vacuum evaporation device, and the maximum value of ΔR/R is 50 Å compared to that of a conventional Cu layer.
This technology enables a magnetoresistive element that exists at around 20 Å and exhibits a large magnetoresistive effect at room temperature and in a practical applied magnetic field.
This is suitable for application to R sensors, etc.
【図１】本発明の磁気抵抗材料の動作原理を示す図（ａ
）は印加磁界とΔＲ／Ｒの関係を示す図（ｂ）はΔＲ／
Ｒがピークを示す低い印加磁界近傍における各磁性層の
スピンの配列方向を示す断面図（ｃ）は十分大きい印加
磁界における各磁性層のスピンの配列方向を示す断面図FIG. 1 is a diagram showing the operating principle of the magnetoresistive material of the present invention (a
) shows the relationship between the applied magnetic field and ΔR/R (b) shows the relationship between ΔR/R
(c) is a cross-sectional view showing the spin alignment direction of each magnetic layer near the low applied magnetic field where R peaks. (c) is a cross-sectional view showing the spin alignment direction of each magnetic layer in a sufficiently large applied magnetic field.
【図２】（実施例１）における磁気抵抗材料の特性を示
す図[Figure 2] Diagram showing the characteristics of the magnetoresistive material in (Example 1)
１ 磁性薄膜層 ２ 金属非磁性薄膜層 ３ 磁性薄膜層 1 Magnetic thin film layer 2 Metal nonmagnetic thin film layer 3 Magnetic thin film layer
Claims (3)
Åの第一の磁性薄膜層と（ＮｉＸＦｅＹ）ＣｏＺを主成
分とし厚さが１０〜１００Åの第二の磁性薄膜層とをＣ
ｕを主成分とし厚さが１０〜３５Åの金属非磁性薄膜層
を介して交互に積層してなる磁気抵抗効果材料。ただし
Ｘ、Ｙ、Ｚはそれぞれ、０．６≦Ｘ≦０．９、０≦Ｙ≦
０．３、０．０１≦Ｚ≦０．３Claim 1: Mainly composed of Co and has a thickness of 10 to 100 mm.
A first magnetic thin film layer with a thickness of 10 to 100 Å and a second magnetic thin film layer mainly composed of (NiXFeY)CoZ and a thickness of 10 to 100 Å are made of C.
A magnetoresistive material composed of u as a main component and alternately laminated with metal nonmagnetic thin film layers having a thickness of 10 to 35 Å interposed therebetween. However, X, Y, and Z are 0.6≦X≦0.9, 0≦Y≦, respectively.
0.3, 0.01≦Z≦0.3
主成分とし厚さが１０〜１００Åの第一の磁性薄膜層と
（ＮｉＸＦｅＹ）ＣｏＺを主成分とし厚さが１０〜１０
０Åの第二の磁性薄膜層とをＣｕを主成分とし厚さが１
０〜２５Åの金属非磁性薄膜層を介して交互に積層して
なる磁気抵抗効果材料。ただしＸ、Ｙ、Ｚはそれぞれ、
０．６≦Ｘ≦０．９、０＜Ｙ≦０．２５、０．０１＜Ｚ
≦０．２５2. A first magnetic thin film layer containing Co as a main component and having a thickness of 10 to 100 Å, and a first magnetic thin film layer containing Co as a main component and having a thickness of 10 to 10 Å.
A second magnetic thin film layer with a thickness of 0 Å and a thickness of 1 Å with Cu as the main component.
A magnetoresistive material formed by alternately laminating metal nonmagnetic thin film layers with a thickness of 0 to 25 Å. However, X, Y, and Z are each
0.6≦X≦0.9, 0<Y≦0.25, 0.01<Z
≦0.25
効果材料を製造するにあたって、金属磁性薄膜層、金属
非磁性薄膜層を多元スパッタ装置を用いて逐次積層して
形成することを特徴とする磁気抵抗効果材料の製造方法
。3. In manufacturing the magnetoresistive material according to claim 1, a magnetoresistive material is formed by sequentially laminating a metal magnetic thin film layer and a metal nonmagnetic thin film layer using a multi-sputtering device. Method of manufacturing effect materials.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3043305A JP2961914B2 (en) | 1991-03-08 | 1991-03-08 | Magnetoresistive material and method of manufacturing the same |
| US07/840,821 US5277991A (en) | 1991-03-08 | 1992-02-25 | Magnetoresistive materials |
| DE69200169T DE69200169T3 (en) | 1991-03-08 | 1992-03-06 | Magnetoresistive materials. |
| EP92103874A EP0503499B2 (en) | 1991-03-08 | 1992-03-06 | Magnetoresistive materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3043305A JP2961914B2 (en) | 1991-03-08 | 1991-03-08 | Magnetoresistive material and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04280483A true JPH04280483A (en) | 1992-10-06 |
| JP2961914B2 JP2961914B2 (en) | 1999-10-12 |
Family
ID=12660083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3043305A Expired - Fee Related JP2961914B2 (en) | 1991-03-08 | 1991-03-08 | Magnetoresistive material and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2961914B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06325934A (en) * | 1992-10-30 | 1994-11-25 | Toshiba Corp | Magnetoresistance effect element |
| US5568115A (en) * | 1993-12-27 | 1996-10-22 | Sony Corporation | Artificial lattice film and magneto-resistance effect element using the same |
| US5661621A (en) * | 1994-09-08 | 1997-08-26 | Fujitsu Limited | Magnetoresistive head |
| US5688605A (en) * | 1992-10-30 | 1997-11-18 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5780176A (en) * | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5837068A (en) * | 1993-08-03 | 1998-11-17 | Kazuaki Fukamichi And Ykk Corporation | Magnetoresistance effect material, process for producing the same, and magnetoresistive element |
| US6074535A (en) * | 1994-09-09 | 2000-06-13 | Fujitsu Limited | Magnetoresistive head, method of fabricating the same and magnetic recording apparatus |
| US6395388B1 (en) | 1992-10-30 | 2002-05-28 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
-
1991
- 1991-03-08 JP JP3043305A patent/JP2961914B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738946A (en) * | 1992-10-30 | 1998-04-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5688605A (en) * | 1992-10-30 | 1997-11-18 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5702832A (en) * | 1992-10-30 | 1997-12-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5725963A (en) * | 1992-10-30 | 1998-03-10 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| JPH06325934A (en) * | 1992-10-30 | 1994-11-25 | Toshiba Corp | Magnetoresistance effect element |
| US5780176A (en) * | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US6159593A (en) * | 1992-10-30 | 2000-12-12 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US6368706B1 (en) | 1992-10-30 | 2002-04-09 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US6395388B1 (en) | 1992-10-30 | 2002-05-28 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5837068A (en) * | 1993-08-03 | 1998-11-17 | Kazuaki Fukamichi And Ykk Corporation | Magnetoresistance effect material, process for producing the same, and magnetoresistive element |
| US5568115A (en) * | 1993-12-27 | 1996-10-22 | Sony Corporation | Artificial lattice film and magneto-resistance effect element using the same |
| US5661621A (en) * | 1994-09-08 | 1997-08-26 | Fujitsu Limited | Magnetoresistive head |
| US6074535A (en) * | 1994-09-09 | 2000-06-13 | Fujitsu Limited | Magnetoresistive head, method of fabricating the same and magnetic recording apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2961914B2 (en) | 1999-10-12 |
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