JPH0427168A - Pressure sensitive diaphragm of silicon - Google Patents
Pressure sensitive diaphragm of siliconInfo
- Publication number
- JPH0427168A JPH0427168A JP13189690A JP13189690A JPH0427168A JP H0427168 A JPH0427168 A JP H0427168A JP 13189690 A JP13189690 A JP 13189690A JP 13189690 A JP13189690 A JP 13189690A JP H0427168 A JPH0427168 A JP H0427168A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- temperature coefficient
- electronic circuit
- pressure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000003321 amplification Effects 0.000 claims abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052796 boron Inorganic materials 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000010409 thin film Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910019974 CrSi Inorganic materials 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は広〈産業分野にて圧力の検出または測定に用い
られる半導体圧力センサのシリコン感圧ダイアフラム、
特に、圧力検出部および増巾調整用電子回路を備えるシ
リコン感圧ダイアプラムに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is broadly applicable to silicon pressure-sensitive diaphragms of semiconductor pressure sensors used for detecting or measuring pressure in the industrial field;
In particular, it relates to a silicon pressure-sensitive diaphragm with a pressure detection section and an electronic circuit for adjusting the width.
第３図は従来の半導体圧力センサの構造の一例を示し、
圧力検出部と増巾調整用電子回路とを備えたシリコン感
圧ダイアフラム１０は圧力導入孔１１Ａが設けられた台
座１１の上部に、この圧力導入孔を覆うようはんだ等に
より接合される。この台座１１は、圧力導入孔１２人が
設けられた導圧部１２にこれら圧力導入孔を合わせては
んだ等で接合される。Figure 3 shows an example of the structure of a conventional semiconductor pressure sensor.
A silicon pressure-sensitive diaphragm 10 including a pressure detection section and an electronic circuit for width adjustment is bonded to the upper part of a pedestal 11 provided with a pressure introduction hole 11A by soldering or the like so as to cover the pressure introduction hole. This pedestal 11 is joined by soldering or the like to a pressure guide section 12 provided with 12 pressure introduction holes, with these pressure introduction holes aligned.
導圧部１２は容器底部１３を貫通して溶接等でこの容器
底ｓ１３に接合されるシリコン感圧ダイアフラム１０は
容器蓋部１４を容器底部１３に浴接等で接合することに
よって各器内に封入される。被測定圧力は圧力導入孔１
２ＡおよびＩＩＡを通してシリコン感圧ダイアフラムｌ
Ｏの圧力検出部の一方の面に、第３図では下面に加えら
れる。容器蓋部１４と容器底部１３によって形成される
空間部１５の圧力は基準圧力として前記圧力検出部の他
方の面に、第３図では上面に加えられる。空間部１５の
基準圧力は絶対圧測定の場合、真空または所定の圧力に
図外の手段により保ち気密に封じるようにする。また、
相対圧測定の場合１例えば、容器蓋部１４に孔を設は空
間部１５を大気開放とする。シリコン感圧ダイアフラム
１０の出力は気密貫通端子１６を通して外部に取り出さ
れる。The pressure guiding part 12 penetrates the container bottom 13 and is joined to the container bottom s13 by welding or the like.The silicon pressure sensitive diaphragm 10 is inserted into each container by joining the container lid 14 to the container bottom 13 by bath welding or the like. Enclosed. The pressure to be measured is pressure introduction hole 1
Silicon pressure sensitive diaphragm l through 2A and IIA
It is applied to one side of the pressure sensing part of O, and to the bottom side in FIG. The pressure in the space 15 formed by the container lid 14 and the container bottom 13 is applied as a reference pressure to the other surface of the pressure detection section, ie, to the top surface in FIG. 3. In the case of absolute pressure measurement, the reference pressure in the space 15 is maintained at a vacuum or a predetermined pressure by a means not shown, and the space is hermetically sealed. Also,
In the case of relative pressure measurement 1, for example, a hole is provided in the container lid 14 and the space 15 is opened to the atmosphere. The output of the silicon pressure sensitive diaphragm 10 is taken out to the outside through an airtight through terminal 16.
第４図は前記圧力検出部および増巾調整用電子回路を備
えたシリコン感圧ダイアフラム１０の構造を示し、（ａ
）は平面図、（ｂ）はｌａｌのＢ−Ｂにおける断面図で
ある。Ｎ型のシリコン基板１の一方の面の。FIG. 4 shows the structure of a silicon pressure-sensitive diaphragm 10 equipped with the pressure detecting section and the electronic circuit for adjusting the width.
) is a plan view, and (b) is a sectional view taken along line B-B of lal. One side of the N-type silicon substrate 1.
第４図では下面の中央部をエツチング等により除き、薄
く加工してダイアフラム２を形成し、その他方の面の、
第４図では上面の中央部で、ダイアフラム２の中心部に
２個の歪ゲージ３Ａおよび３Ｂとその周辺部に２個の歪
ゲージ３Ｃおよび３Ｄを１例えば、Ｐｆｆｉのボロンを
ドーズ１１０”〜１８階で拡散することにより形成しこ
れらをブリッジに接続する。ダイアフラム２とブリッジ
に接続された歪ゲージ３Ａ、３Ｂ、３Ｃ，３Ｄで圧力検
出部が構成される。４は増巾調整用電子回路に含まれる
演算増巾器で、図を分り易くするため第４図では１個の
み示しであるが１通常、複数個がダイアフラム２の外側
に、すなわちシリコン基板ｌの周辺部の肉厚部に形成さ
れる。この演算増巾器４は拡散プロセスで作られており
、特に、そのトランジスタのベースは、例えば、Ｐ型の
ボロンが比較的高いドーズ量１０ 〜１０〜で拡散され
る。８および９は増巾調整用電子回路に含まれる抵抗で
１通常。In Fig. 4, the central part of the lower surface is removed by etching, etc., and the diaphragm 2 is formed by thinning the diaphragm 2.
In FIG. 4, two strain gauges 3A and 3B are placed in the center of the diaphragm 2, and two strain gauges 3C and 3D are placed in the periphery of the diaphragm 2. The diaphragm 2 and the strain gauges 3A, 3B, 3C, and 3D connected to the bridge constitute a pressure detection section. 4 is an electronic circuit for adjusting the width. Among the included operational amplifiers, only one is shown in FIG. 4 for the sake of clarity; however, normally, a plurality of amplifiers are formed outside the diaphragm 2, that is, in the thick peripheral part of the silicon substrate l. This operational amplifier 4 is made by a diffusion process, in particular the base of its transistor is diffused with, for example, P-type boron at a relatively high dose of 10 to 10.8 and 9. is the resistance included in the electronic circuit for width adjustment, which is usually 1.
それぞれ複数個が形成される。８は正の温度係数を有す
る抵抗を示し、前記歪ゲージと同一の拡散プロセスで１
例えば、Ｐ型のボロンを比較的低いドーズ１ｌｌｏ
〜１０ ｌａｌで拡散することにより形成する。ドーズ
量が１０ 〜１０ ｌａｌの場合、ソート抵抗は４００
〜８００Ω／口で、その抵抗の温度係数は３０００〜４
０００ｐｐｒｒｌ／′Ｃで大きい。９は温度係数が一定
の抵抗で、例えば、ＣｒＳｉ 、 ＮｌＣｒ 、 Ｔａ
Ｎ等のスパッタあるいは蒸着により薄膜抵抗として形成
される。この薄膜抵抗９は、前記拡散により形成された
正の温度係数と異なり、レーザトリミングにより抵抗値
の調整が可能であり、可変抵抗として用いることができ
る。第５図は、一般に半導体圧力センサに用いられる増
巾調整用電子回路の一例の回路であり、ブリッジに接続
された歪ゲージ３Ａ。A plurality of each are formed. 8 indicates a resistor with a positive temperature coefficient, and 1
For example, P-type boron at a relatively low dose of 1llo
Formed by diffusion with ~10 lal. When the dose is 10 to 10 lal, the sort resistance is 400
~800Ω/mouth, the temperature coefficient of its resistance is 3000~4
It is large at 000pprrl/'C. 9 is a resistance with a constant temperature coefficient, for example, CrSi, NlCr, Ta
It is formed as a thin film resistor by sputtering or vapor deposition of N or the like. Unlike the positive temperature coefficient formed by diffusion, the resistance value of this thin film resistor 9 can be adjusted by laser trimming and can be used as a variable resistor. FIG. 5 shows an example of an electronic circuit for adjusting the width generally used in semiconductor pressure sensors, and shows a strain gauge 3A connected to a bridge.
３Ｂ、３Ｃ，３Ｄの出力は演算増巾器ＯＰＩ、ＯＦ２
により、インピーダンス変換ならびに反転増巾が行わ
れる。この歪ゲージの出力は負の温度係数を有するので
演算増巾器の帰還抵抗として正の温度係数を有する抵抗
Ｒ９と温度係数が一定の抵抗Ｒ６を直列に接続し、抵抗
Ｒ６の抵抗値を調整することにより歪ゲージの出力の温
度係数を補正する。The outputs of 3B, 3C, and 3D are operational amplifiers OPI and OF2.
Impedance conversion and inversion amplification are performed by this. Since the output of this strain gauge has a negative temperature coefficient, a resistor R9 with a positive temperature coefficient and a resistor R6 with a constant temperature coefficient are connected in series as feedback resistance of the operational amplifier, and the resistance value of resistor R6 is adjusted. By doing so, the temperature coefficient of the strain gauge output is corrected.
測定感度は抵抗Ｒ５で調整する。抵抗Ｒ１、Ｒ２。Measurement sensitivity is adjusted with resistor R5. Resistors R1 and R2.
Ｒ３，Ｒ４，Ｒ７，Ｒ８は出力のオフセット電位を決め
る抵抗であり、正の温度係数を有する抵抗Ｒ７゜Ｒ８に
それぞれ直列に接続された温度係数が一定の抵抗Ｒ３，
Ｒ４の調整によりオフセット電位の温度係数を補正する
。これら正の温度係数を有する抵抗は第４図において８
で示される拡散により作られた抵抗で、温度係数一定の
抵抗は第４図において９で示されるレーザトリミングに
より抵抗値の調整可能な薄膜抵抗を用いる。R3, R4, R7, and R8 are resistors that determine the offset potential of the output, and resistors R3, R8, and R8, each having a constant temperature coefficient, are connected in series with resistors R7 and R8, respectively, each having a positive temperature coefficient.
The temperature coefficient of the offset potential is corrected by adjusting R4. These resistors with positive temperature coefficients are 8
For the resistor shown by diffusion and having a constant temperature coefficient, a thin film resistor whose resistance value can be adjusted by laser trimming is used, as shown by 9 in FIG.
第６図は異なる例の増巾調整用電子回路の回路図で、４
個の演算増巾器ＯＰ３ 、ＯＦ２ 、ＯＦ２ 、ＯＦ２
と正の温度係数を有する抵抗ｋＬ２Ｄ 、 Ｒ２１と温
度係数一定の抵抗ＲＩＯ，Ｒ１１、Ｒ１２，Ｒ１３，Ｒ
］４． Ｒ１５，Ｒ１６゜１１７ 、 Ｒｌｇ 、 Ｒ
１９から構成される項中調整回路で構成され、第５図の
回路よりより高い測定感度が得られる。この回路におい
ても１４５図の回路と同様。Figure 6 is a circuit diagram of a different example of an electronic circuit for adjusting the width.
operational amplifiers OP3, OF2, OF2, OF2
and a resistor kL2D with a positive temperature coefficient, R21 and a resistor RIO, R11, R12, R13, R with a constant temperature coefficient
]4. R15, R16゜117, Rlg, R
This circuit is composed of a middle adjustment circuit consisting of 19 circuits, and can obtain higher measurement sensitivity than the circuit shown in FIG. This circuit is also similar to the circuit in Figure 145.
これら正の温度係数を有する抵抗は第４図において８で
示される拡散により作られた抵抗で、温度係数一定の抵
抗は第４図において９で示されるレーザトリミングによ
り抵抗値のｍｕ可能な薄膜抵抗を用いる。These resistors with positive temperature coefficients are resistors made by diffusion, shown as 8 in FIG. Use.
前述の半導体圧力センサにおいては圧力検出部および増
巾調整用電子回路を備えたシリコン感圧ダイアフラムの
製造プロセスは歪ゲージ、演算増巾器などを製造するボ
ロン等の拡散プロセスに加えて薄膜抵抗を形成するＣｒ
Ｓｉ 、 ＮｉＣｒ 、 ＴａＮ等のスパッタあるいは
蒸着プロセスが必要となる。二つの異なるプロセスを使
用するため、製造プロセスが長くなりコストアップの要
因となっていた。更に、 ＣｒＳｉ 、Ｎ５Ｃｒ 、
ＴａＮ等の薄膜抵抗材料はウェーハの汚染の原因となる
場合が多く、このため、薄膜抵抗形成後のプロセスを他
の一般製品と共通のラインで行うことは危険で、専用の
ラインを設けることが必要であり、これもまた、コスト
アップの要因となっていた。In the semiconductor pressure sensor mentioned above, the manufacturing process of the silicon pressure-sensitive diaphragm equipped with the pressure detection part and the electronic circuit for amplification adjustment involves the diffusion process of boron, etc., which is used to manufacture strain gauges, operational amplifiers, etc., as well as thin film resistors. Forming Cr
A sputtering or vapor deposition process of Si, NiCr, TaN, etc. is required. Since two different processes are used, the manufacturing process becomes longer, which increases costs. Furthermore, CrSi, N5Cr,
Thin film resistor materials such as TaN often cause wafer contamination, so it is dangerous to perform the process after thin film resistor formation on the same line as other general products, and it is recommended to set up a dedicated line. This was also a factor in increasing costs.
本発明の課題は前述の問題点を解決して、同一のプロセ
スで製造を可能とする圧力検出部および増巾ｖ＃４整用
電子回路を備えたシリコン感圧ダイアフラムを提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the aforementioned problems and provide a silicon pressure sensitive diaphragm equipped with a pressure sensing section and an electronic circuit for increasing the width V#4, which can be manufactured in the same process.
前述の課題を解決するために１本発明のシリコン感圧ダ
イア７２ムにおいては、シリコン基板の一方の面の中央
部が除かれて形成されたダイアフラムおよびその他方の
面の中央部に形成された１個またはそれ以上の歪ゲージ
からなる圧力検出部と、前記シリコン基板の周辺部に形
成された前記圧力検出部の出力の増巾調整用電子回路と
を備えたシリコン感圧ダイアフラムにおいて、増巾調１
用電子回路に含まれる正の温度係数を有する抵抗は前記
圧力検出部の歪ゲージと同一の拡散プロセスにより形成
された抵抗からなり、前記増巾調整用電子回路に含まれ
る温度係数一定の抵抗はこの増巾調整用電子回路に含ま
れる演算増巾器のトランジスタのペースと同一の拡散プ
ロセスにより形成された抵抗からなるようにする。更に
、増巾調整用電子回路に含まれる正の温度係数を有する
抵抗あるいは温に係数一定の抵抗の一部もしくは全部が
並列にアルミ線が結線された＊ａ個の抵抗素子が直列に
結線され、このアルミ線を選択的に切断することにより
抵抗値の調整を可能とした抵抗からなるようにする。In order to solve the above-mentioned problems, in the silicon pressure sensitive diaphragm 72 of the present invention, a diaphragm is formed by removing the central part of one surface of the silicon substrate, and a diaphragm is formed in the central part of the other surface of the silicon substrate. In a silicon pressure-sensitive diaphragm comprising a pressure detection section consisting of one or more strain gauges, and an electronic circuit for adjusting the amplification of the output of the pressure detection section formed on the periphery of the silicon substrate, key 1
The resistor with a positive temperature coefficient included in the electronic circuit for adjusting the amplitude is formed by the same diffusion process as the strain gauge of the pressure detection section, and the resistor with a constant temperature coefficient included in the electronic circuit for adjusting the amplitude is The resistor is made of a resistor formed by the same diffusion process as that of the transistor of the operational amplifier included in the amplification adjustment electronic circuit. Further, some or all of the resistors having a positive temperature coefficient or the resistors having a constant temperature coefficient included in the electronic circuit for adjusting the width are connected in parallel with aluminum wires, and *a resistor elements are connected in series. By selectively cutting this aluminum wire, a resistor whose resistance value can be adjusted is made.
本発明の圧力検出部および増巾調整用電子回路を備えた
シリコン感圧ダイアフラムにおいては。In the silicon pressure-sensitive diaphragm equipped with a pressure detection section and an electronic circuit for width adjustment according to the present invention.
増巾ＩＩＮＥ用電子回路の正の温度係数を有する抵抗は
前記圧力検出部の歪ゲージと同一の拡散プロセスにより
形成された抵抗からなり、一定の温度係数を有する抵抗
はこの増巾調整用電子回路に含まれる演算増巾器のトラ
ンジスタのペースと同一の拡散プロセスにより形成され
た抵抗からなるようにしたので、従来、必要とされた薄
膜抵抗のスパッタあるいは蒸着プロセスは廃止され、同
一のプロセスで製造が可能となる。これら抵抗は必要に
応じて、並列にアルミ線が結線された複数個の抵抗素子
を直列ξこ結線した抵抗からなるようにし。The resistor having a positive temperature coefficient of the electronic circuit for increasing the width IINE is formed by the same diffusion process as the strain gauge of the pressure detection section, and the resistor having a constant temperature coefficient is a resistor having a positive temperature coefficient of the electronic circuit for increasing the width IINE. Since the resistor is formed by the same diffusion process as the transistors in the operational amplifier included in the device, the sputtering or evaporation process required for thin film resistors in the past is eliminated, and they can be manufactured using the same process. becomes possible. These resistors may be made up of a plurality of resistors connected in series with aluminum wires connected in parallel, if necessary.
これらアルミｍを１例えば、レーザ照射あるいは過電流
通電により切断することによりその抵抗値を調贅するよ
うにする。The resistance value of the aluminum m is adjusted by cutting it by, for example, laser irradiation or overcurrent energization.
第１図は本発明の一英施例における圧力検出部および増
巾１１４ＪＩ用電子回路を備えたシリコン感圧ダイアフ
ラムの構造を示し、（ａｌは平面図、（ｂ）はｌａｌの
Ａ−Ａにおける断面図である。Ｎ型シリコン基板１の一
方の面の、第１図では下面の中゛央部をエツチング等に
より除き薄く加工してダイアフラム２を形成し、その他
方の面の、第１図では上面の中央部で、ダイアフラム２
の中心部に２個の歪ゲージ３Ａおよび３Ｂとその周辺部
に２個の歪ゲージ３Ｃおよび３Ｄを第４図のシリコン感
圧ダイアフラムと同じように２例えば、Ｐ型のボロンを
ドーズ量１０ 〜１ｏ ／ｅｘ！で拡散することにより
形成しこれらをブリッジに接続する。ダイアフラム２と
ブリッジに接続された歪ゲージ３Ａ、３Ｂ、３Ｃ，３Ｄ
で圧力検出部が構成される。４は増巾調整用電子回路に
含まれる演算増巾器で、図を分り易くするため第１図で
は１個のみ示しであるが、通常、複数個が、ダイアフラ
ム２の外側に、すなわち、シリコン基板１の周辺部の肉
厚部に形成される。この演算増巾器４は拡散プロセスで
作られており。FIG. 1 shows the structure of a silicon pressure-sensitive diaphragm equipped with a pressure detection part and an electronic circuit for the width increaser 114JI in the first embodiment of the present invention (al is a plan view, (b) is a plane view taken along A-A of lal). 1 is a cross-sectional view of one side of an N-type silicon substrate 1, in which the center part of the bottom surface in FIG. Now, in the center of the top surface, diaphragm 2
Two strain gauges 3A and 3B are placed in the center of the diaphragm, and two strain gauges 3C and 3D are placed around them in the same way as the silicon pressure-sensitive diaphragm shown in FIG. 1o/ex! and connect them to a bridge. Strain gauges 3A, 3B, 3C, 3D connected to diaphragm 2 and bridge
The pressure detection section is configured by: Reference numeral 4 denotes an operational amplifier included in the electronic circuit for adjusting the amplitude. Only one amplifier is shown in FIG. It is formed in a thick portion at the periphery of the substrate 1. This operational amplifier 4 is made by a diffusion process.
特に、そのトランジスタのベースは、例えば、Ｐ型のボ
ロンが比較的高いドーズ量１０ 〜１０ ／ｌＩＩ！で
拡散される。６および７は増巾調整用電子回路に含まれ
る抵抗で通常、それぞれ複数個が形成される。６は正の
温度係数を有する抵抗を示し、前記歪ゲージと同一の拡
散プロセスで、例えば、Ｐ型のボロンを比較的低いドー
ズ量１０ 〜１０βで拡散することにより形成する。ド
ーズ量が１０ 〜１０〜の場合、シート抵抗は４００〜
８００Ω／口で、その抵抗の温度係数は３０００〜４０
００ ｐｐｍｆＣで太きい。７は一定の温度係数を有す
る抵抗で１本発明においては前記演算増巾器４のトラン
ジスタのベースと同一の拡散プロセスで、例えば、Ｐ型
のボロンを比較的高いドーズ量１０ 〜１０ βで拡散
することにより形成する。ドーズ量が１０ 〜１０／メ
の場合、シート抵抗は８０〜１８０Ω／口で、その抵抗
温度係数は約１０００ ｐｐｍ／’Ｃで小さく、はぼ、
温度係数一定の抵抗と見なすことができる。これら拡散
により形成された抵抗の抵抗値を′ｆＡ！！する場合は
。In particular, the base of the transistor is, for example, made of P-type boron at a relatively high dose of 10 to 10 /lII! It is spread by. Reference numerals 6 and 7 denote resistors included in the electronic circuit for adjusting the width, and a plurality of resistors are usually formed. Reference numeral 6 indicates a resistor having a positive temperature coefficient, and is formed by, for example, diffusing P-type boron at a relatively low dose of 10 to 10β in the same diffusion process as the strain gauge. When the dose is 10~10~, the sheet resistance is 400~
800Ω/mouth, the temperature coefficient of its resistance is 3000-40
00 ppmfC and thick. 7 is a resistor having a constant temperature coefficient 1 In the present invention, P-type boron, for example, is diffused at a relatively high dose of 10 to 10 β using the same diffusion process as the base of the transistor of the operational amplifier 4. Form by doing. When the dose is 10 to 10/metre, the sheet resistance is 80 to 180 Ω/mouth, and the temperature coefficient of resistance is small at about 1000 ppm/'C.
It can be considered as a resistance with a constant temperature coefficient. The resistance value of the resistor formed by these diffusions is 'fA! ! If you do.
温度係数一定の抵抗７を例に説明すると、第２図のよう
に複数個の抵抗素子７Ａがアルミパッド７Ｂを介して直
列に結線され、これらアルミパッドフＢ間をアルミ線７
Ｃで結線することにより短絡し７Ａ。Taking a resistor 7 with a constant temperature coefficient as an example, a plurality of resistor elements 7A are connected in series via aluminum pads 7B as shown in FIG.
By connecting at C, it is short-circuited to 7A.
７Ｂ、７Ｃで１個の抵抗を構成するようにする。抵抗値
を′ＰＡ整する場合は、適当な個所のアルミ線７Ｃにレ
ーザ照射あるいはアルミパッドフ８間に電圧を印加しア
ルミ線７Ｃに過電流通電することにより切断して抵抗値
を調整する。抵抗を構成する抵抗素子を異なる値に設定
すると取り得る抵抗値の組合せが多くなり細かい抵抗値
の調整が可能となる。例えば、抵抗素子を４．２、ＩＫ
Ωとした場合Ｏ１１，２，３，４，５，６，７にΩの細
かい抵抗値を得ることができる１、この方法は、拡散プ
ロセスで形成される正の温度係数を有する抵抗６にも適
用できることは勿論である。7B and 7C constitute one resistor. When adjusting the resistance value by 'PA, the aluminum wire 7C at a suitable location is irradiated with a laser or a voltage is applied between the aluminum pads 8 to apply an overcurrent to the aluminum wire 7C to cut it and adjust the resistance value. Setting the resistance elements constituting the resistance to different values increases the number of possible combinations of resistance values, making it possible to finely adjust the resistance value. For example, if the resistance element is 4.2, IK
Ω, it is possible to obtain fine resistance values of Ω for O11, 2, 3, 4, 5, 6, and 7.1 This method also applies to resistors 6 with a positive temperature coefficient formed by the diffusion process. Of course, it can be applied.
前記、正の温度係数を有する抵抗６は前記増巾ｖＩ４！
＆用電子回路に含まれる正の温度係数を有する抵抗、例
えば、第５図の回路で抵抗Ｒ７，１（８゜Ｒ９，第６図
の回路で抵抗Ｒ２０、１４２１として用いる。The resistor 6 having a positive temperature coefficient has the amplified width vI4!
A resistor with a positive temperature coefficient included in the electronic circuit for &, for example, resistor R7,1 (8° R9 in the circuit of FIG. 5, used as resistor R20, 1421 in the circuit of FIG. 6).
温度係数一定の抵抗７は前記増巾調整用電子回路に含よ
れる温度係数一定の抵抗、例えば、第５図の回路で抵抗
Ｒ１、Ｒ２，Ｒ３，Ｒ４，Ｌｉ５．Ｒ６，第６図の回路
でＲＩＯ，Ｒ１１、Ｒ１２，Ｒ１：（、１１１４、Ｒ１
５、ＪＬ１６゜Ｒ１７、Ｒ１８、Ｒ１９として用いる。The resistor 7 with a constant temperature coefficient is a resistor with a constant temperature coefficient included in the electronic circuit for adjusting the amplitude, for example, the resistors R1, R2, R3, R4, Li5 . R6, RIO, R11, R12, R1: (, 1114, R1
5. Used as JL16°R17, R18, R19.
抵抗値の調整の必要な抵抗１例えば第５図の回路でＲ１
、Ｌｉ３ 、 Ｒ５、Ｒ６、第６図の回路でＩＬＩＯ、
Ｒ１５、）Ｌｉ２ 、 ）Ｌｉ２は第２図に示す構成の
抵抗値の調整可能な抵抗とする。Resistor 1 whose resistance value needs to be adjusted, for example R1 in the circuit shown in Figure 5.
, Li3, R5, R6, ILIO in the circuit of Fig. 6,
R15, )Li2, )Li2 are resistors whose resistance values can be adjusted as shown in FIG.
なお、抵抗値の調整は、従来の方法では温度係数が一定
の薄膜抵抗のみ可能であったが、第２図の構成による抵
抗で拡散によって形成された抵抗においても抵抗値の調
整が可能となるので、回路設計上の裕度が高まり、かつ
、特性の調整工程における工数が短縮する。In addition, with the conventional method, the resistance value could only be adjusted for thin film resistors with a constant temperature coefficient, but with the resistor with the configuration shown in Figure 2, it is now possible to adjust the resistance value even for resistors formed by diffusion. Therefore, the latitude in circuit design is increased, and the number of man-hours in the characteristic adjustment process is reduced.
本発明によれば、圧力検出部および増巾調整用電子回路
を備えたシリコン感圧ダイアフラムにおいて、増巾調整
用電子回路の正の温度係数を有する抵抗は前記圧力検出
部の歪ゲージと同一の拡散プロセスにより形成された抵
抗からなり、一定の温度係数を有する抵抗はこの増巾調
整用電子回路に含まれる演算増巾器のトランジスタのベ
ースと同一の拡散プロセスにより形成された抵抗からな
るようにしたので、同一のプロセスで製造が可能となり
、コストは大巾に低下した。才た、これら拡散プロセス
により形成された抵抗は並列にアルミ線が結線された複
数個の抵抗素子を直列に結線した抵抗からなるようにし
て抵抗値の調整を可能としたので、増巾調整用電子回路
に含まれる正の温度係数を有する抵抗および温度係数一
定の抵抗のいずれの抵抗でもその抵抗値の調整が可能と
なったので設計上の裕度が高才り、かつ、４１１Ｆ性の
調整工程における工数が短縮し、コストはより低下した
。According to the present invention, in the silicon pressure sensitive diaphragm equipped with a pressure detection part and an electronic circuit for amplification adjustment, the resistance having a positive temperature coefficient of the electronic circuit for amplification adjustment is the same as the strain gauge of the pressure detection part. The resistor, which is formed by a diffusion process and has a constant temperature coefficient, is formed by the same diffusion process as the base of the transistor of the operational amplifier included in this amplifier adjustment electronic circuit. This made it possible to manufacture them using the same process, significantly reducing costs. In addition, the resistors formed by these diffusion processes are made of resistors in which multiple resistor elements are connected in parallel with aluminum wires, and the resistance value can be adjusted by connecting them in series. It is now possible to adjust the resistance value of both the resistor with a positive temperature coefficient and the resistor with a constant temperature coefficient included in the electronic circuit, so the design margin is high and the 411F property can be adjusted. The number of man-hours in the process was shortened, and costs were further reduced.
第１図は本発明の一冥施例における圧力検出部および増
巾調整用電子回路を備えたシリコン感圧ダイアフラムの
構造を示し、（ａ）は平面図、（ｂｌは（ａｌのＡ−Ａ
における断面図、第２図は第１図の増巾調整回路に含ま
れる抵抗値の調整可能な抵抗の構造を示す平面図、第３
図は、従来の、圧力検出部および増巾調整用電子回路を
備えたシリコン感圧器内に封入されている圧力検出部右
よび増巾調整用電子回路を備えたシリコン感圧ダイアフ
ラムの構造を示し、ｌａｌは平面図、（ｂ）は（ａｔの
Ｂ−Ｂに詔ける断面図、第５図は通常用いられる半導体
圧力センサの増巾調整用電子回路の一例の回路図、第６
図は通常用いられる半導体圧力センサの興なる例の回路
図である。
１・・・半導体基板、２・・・ダイアフラム。
３Ａ、 ３Ｂ、 ３Ｃ，３Ｄ・・・歪ゲージ、４・・・
演算増巾器、６・・・正の温度係数を有する抵抗、７・
・・温度係数−定の抵抗、７Ａ・・・複数個の抵抗素子
、７Ｃ・・・アルミ４１鼻５１嘔酪
（ｂＪ
第
図
第
図
第
図
第
図FIG. 1 shows the structure of a silicon pressure-sensitive diaphragm equipped with a pressure detection section and an electronic circuit for adjusting width in one embodiment of the present invention, (a) is a plan view, (bl is (A-A of (al)
FIG. 2 is a plan view showing the structure of a resistor whose resistance value can be adjusted included in the width adjustment circuit of FIG.
The figure shows the structure of a silicon pressure-sensitive diaphragm with a pressure detection part and an electronic circuit for amplification adjustment, which is enclosed in a conventional silicon pressure sensor equipped with a pressure detection part and an electronic circuit for amplification adjustment. , lal is a plan view, (b) is a sectional view taken along B-B of (at), FIG.
The figure is a circuit diagram of an early example of a commonly used semiconductor pressure sensor. 1... Semiconductor substrate, 2... Diaphragm. 3A, 3B, 3C, 3D...Strain gauge, 4...
Operational amplifier, 6... Resistor having a positive temperature coefficient, 7.
...Temperature coefficient - constant resistance, 7A...Multiple resistance elements, 7C...Aluminum 41 Nose 51 Bottle (bJ Fig. Fig. Fig. Fig.
Claims (1)
れたダイアフラムおよびその他方の面の中央部に形成さ
れた１個またはそれ以上の歪ゲージからなる圧力検出部
と、前記シリコン基板の周辺部に形成された前記圧力検
出部の出力の増巾調整用電子回路とを備えたシリコン感
圧ダイアフラムにおいて、前記増巾調整用電子回路に含
まれる正の温度係数を有する抵抗は前記圧力検出部の歪
ゲージと同一の拡散プロセスにより形成された抵抗から
なり、前記増巾調整用電子回路に含まれる温度係数一定
の抵抗はこの増巾調整用電子回路に含まれる演算増巾器
のトランジスタのベースと同一の拡散プロセスにより形
成された抵抗からなることを特徴とする圧力検出部およ
び増巾調整用電子回路を備えたシリコン感圧ダイアフラ
ム。 ２）請求項１）記載のシリコン感圧ダイアフラムにおい
て、増巾調整用電子回路に含まれる正の温度係数を有す
る抵抗の一部もしくは全部が並列にアルミ線が結線され
た複数個の抵抗素子が直列に結線され、このアルミ線を
選択的に切断することにより抵抗値の調整を可能とした
抵抗からなることを特徴とする圧力検出部および増巾調
整用電子回路を備えたシリコン感圧ダイアフラム。 ３）請求項１）記載のシリコン感圧ダイアフラムにおい
て、 増巾調整用電子回路に含まれる温度係数一定の抵抗の一
部もしくは全部が並列にアルミ線が結線された複数個の
抵抗素子が直列に結線され、このアルミ線を選択的に切
断することにより抵抗値の調整を可能とした抵抗からな
ることを特徴とする圧力検出部および増巾調整用電子回
路を備えたシリコン感圧ダイアフラム。[Claims] 1) A pressure detection unit consisting of a diaphragm formed by removing the center of one surface of a silicon substrate and one or more strain gauges formed in the center of the other surface. and an electronic circuit for amplification adjustment of the output of the pressure detection section formed on the periphery of the silicon substrate, wherein the positive temperature coefficient included in the electronic circuit for amplification adjustment is The resistor having a constant temperature coefficient is formed by the same diffusion process as the strain gauge of the pressure detecting section, and the resistor having a constant temperature coefficient included in the electronic circuit for adjusting the width is a resistor formed by the same diffusion process as the strain gauge of the pressure detecting section. A silicon pressure-sensitive diaphragm equipped with a pressure sensing section and an electronic circuit for adjusting the amplifier, characterized in that it consists of a resistor formed by the same diffusion process as the base of the transistor of the amplifier. 2) In the silicon pressure-sensitive diaphragm according to claim 1), some or all of the resistors having a positive temperature coefficient included in the electronic circuit for adjusting the width include a plurality of resistive elements each having an aluminum wire connected in parallel. A silicon pressure-sensitive diaphragm equipped with a pressure detection section and an electronic circuit for width adjustment, characterized by comprising resistors connected in series and whose resistance value can be adjusted by selectively cutting the aluminum wire. 3) In the silicon pressure-sensitive diaphragm according to claim 1), some or all of the resistors having a constant temperature coefficient included in the electronic circuit for adjusting the width are connected in series with a plurality of resistive elements each having an aluminum wire connected in parallel. A silicon pressure-sensitive diaphragm equipped with a pressure detection section and an electronic circuit for width adjustment, characterized in that it consists of a resistor that is wired and whose resistance value can be adjusted by selectively cutting the aluminum wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13189690A JPH0427168A (en) | 1990-05-22 | 1990-05-22 | Pressure sensitive diaphragm of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13189690A JPH0427168A (en) | 1990-05-22 | 1990-05-22 | Pressure sensitive diaphragm of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0427168A true JPH0427168A (en) | 1992-01-30 |
Family
ID=15068693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13189690A Pending JPH0427168A (en) | 1990-05-22 | 1990-05-22 | Pressure sensitive diaphragm of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0427168A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8178071B2 (en) | 2006-05-10 | 2012-05-15 | Sony Corporation | Metal oxide nanoparticles, production method thereof, light-emitting element assembly, and optical material |
| EP2829583A1 (en) | 2013-07-22 | 2015-01-28 | Itoh Optical Industrial Co., Ltd. | Hard coating composition |
| US10723915B2 (en) | 2018-11-26 | 2020-07-28 | Itoh Optical Industrial Co., Ltd. | Hard coating composition |
-
1990
- 1990-05-22 JP JP13189690A patent/JPH0427168A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8178071B2 (en) | 2006-05-10 | 2012-05-15 | Sony Corporation | Metal oxide nanoparticles, production method thereof, light-emitting element assembly, and optical material |
| EP2829583A1 (en) | 2013-07-22 | 2015-01-28 | Itoh Optical Industrial Co., Ltd. | Hard coating composition |
| US10723915B2 (en) | 2018-11-26 | 2020-07-28 | Itoh Optical Industrial Co., Ltd. | Hard coating composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4622856A (en) | Sensor with polycrystalline silicon resistors | |
| US5557972A (en) | Miniature silicon based thermal vacuum sensor and method of measuring vacuum pressures | |
| US8186226B2 (en) | Pressure sensor with on-board compensation | |
| US4333349A (en) | Binary balancing apparatus for semiconductor transducer structures | |
| US4911016A (en) | Semiconductor strain gauge bridge circuit | |
| US7493823B2 (en) | Pressure transducer with differential amplifier | |
| US3764950A (en) | Methods for making semiconductor pressure transducers and the resulting structures | |
| EP0086462A2 (en) | Pressure sensor employing semiconductor strain gauge | |
| JPS62102137U (en) | ||
| JPH0322065B2 (en) | ||
| US3899695A (en) | Semiconductor pressure transducer employing novel temperature compensation means | |
| JPS5941134B2 (en) | pressure transducer | |
| US4809536A (en) | Method of adjusting bridge circuit of semiconductor pressure sensor | |
| US3886799A (en) | Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry | |
| US5279164A (en) | Semiconductor pressure sensor with improved temperature compensation | |
| EP0407587A1 (en) | Pressure sensor | |
| JPH0427168A (en) | Pressure sensitive diaphragm of silicon | |
| US3900811A (en) | Economical pressure transducer assemblies, methods of fabricating and mounting the same | |
| JPH10281897A (en) | Semiconductor pressure detector | |
| JP3635824B2 (en) | Method for adjusting output characteristics of semiconductor pressure sensor | |
| JPH04213020A (en) | Sensor assembly and manufacture thereof | |
| JPS63191037A (en) | Semiconductor pressure sensor | |
| JP2001272203A (en) | Distortion measuring apparatus | |
| JP3509336B2 (en) | Integrated sensor | |
| JPH09181191A (en) | Circuit device with differential pair of transistors |