JPH04260326A - Foreign matter eliminating method of semiconductor substrate - Google Patents
Foreign matter eliminating method of semiconductor substrateInfo
- Publication number
- JPH04260326A JPH04260326A JP2121891A JP2121891A JPH04260326A JP H04260326 A JPH04260326 A JP H04260326A JP 2121891 A JP2121891 A JP 2121891A JP 2121891 A JP2121891 A JP 2121891A JP H04260326 A JPH04260326 A JP H04260326A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- substrate
- particles
- semiconductor substrate
- foreign
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 17
- 239000002245 particle Substances 0.000 claims abstract description 34
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910021529 ammonia Inorganic materials 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011259 mixed solution Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 9
- 239000000126 substance Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体集積回路製造工
程において、半導体基板に付着して不良の原因となる異
物粒子の除去方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing foreign particles that adhere to a semiconductor substrate and cause defects in a semiconductor integrated circuit manufacturing process.
【０００２】0002
【従来の技術】半導体集積回路製造工程においては、基
板に付着した異物が不良の原因となるため、異物粒子を
除去するための処理が行われる。半導体基板上に付着し
た異物を除去する方法として、薬液中に基板を浸漬して
洗浄する方法、薬液中で超音波を印加して洗浄する方法
、ブラシで基板をスクラブする方法、ドライアイス微粒
子や、氷微粒子を基板に高圧で噴きつける方法がある。2. Description of the Related Art In the manufacturing process of semiconductor integrated circuits, foreign particles adhering to a substrate cause defects, so a process is performed to remove the foreign particles. Methods for removing foreign matter adhering to semiconductor substrates include cleaning by immersing the substrate in a chemical solution, cleaning by applying ultrasonic waves in a chemical solution, scrubbing the substrate with a brush, dry ice particles, etc. There is a method of spraying ice particles onto the substrate at high pressure.
【０００３】0003
【発明が解決しようとする課題】半導体基板に静電力、
ファンデルワールス力等で弱く付着している異物粒子は
、従来技術の各方法で容易に除去することが可能である
が、ＣＶＤ工程、スパッタ工程等の成膜工程中に、膜の
内部に一部が埋め込まれた異物や、異物成長物は、従来
の薬液中に浸漬する洗浄、薬液中で超音波を印加する洗
浄では全く除去できない。従来技術において、硬いブラ
シを用いて基板をスクラブする方法や、氷微粒子を高圧
力で噴きつけることで、これらの異物の一部を除去する
ことが可能であるが、基板に形成した回路パターンも同
時に破壊される場合がある。[Problem to be solved by the invention] Electrostatic force on the semiconductor substrate,
Foreign particles that are weakly attached due to van der Waals forces etc. can be easily removed using conventional methods, but during film forming processes such as CVD and sputtering processes, foreign particles may be deposited inside the film. Embedded foreign matter and foreign matter growth cannot be removed at all by conventional cleaning methods such as immersion in a chemical solution or cleaning by applying ultrasonic waves in a chemical solution. In conventional technology, it is possible to remove some of these foreign substances by scrubbing the board with a hard brush or by spraying ice particles at high pressure, but the circuit pattern formed on the board can also be removed. They may be destroyed at the same time.
【０００４】本発明は上記問題点に鑑み考案されたもの
であり、ＣＶＤ工程やスパッタ工程で膜の一部分が埋め
込まれた異物や、異常成長物を、回路パターンにダメー
ジを与えることなしに除去する方法を提供するものであ
る。The present invention has been devised in view of the above-mentioned problems, and it is an object of the present invention to remove foreign particles or abnormal growth particles that are partially embedded in the film during the CVD process or sputtering process, without damaging the circuit pattern. The present invention provides a method.
【０００５】[0005]
【課題を解決するための手段】上記問題点を解決するた
めの本発明の方法は、レーザー光の光散乱を利用して基
板上の異物検出を行い、検出した異物粒子の基板上の位
置を記録し、異物粒子のある位置だけに、異物の大きさ
程度またはそれ以下に細く収束させたイオン粒子を照射
して、基板に一部分が埋め込まれている異物や、異常成
長物を除去するものである。[Means for Solving the Problems] The method of the present invention for solving the above problems detects foreign particles on a substrate using light scattering of laser light, and determines the position of the detected foreign particles on the substrate. This method removes foreign particles that are partially embedded in the substrate or abnormal growth by irradiating finely focused ion particles that are about the size of the foreign particle or smaller only at the position where the foreign particle is located. be.
【０００６】[0006]
【作用】異物粒子は、イオン粒子との化学反応や、イオ
ン粒子によるスパッタリングによって除去され、異物だ
けにイオン粒子が照射されるので、基板に形成された回
路パターンがダメージを受けることはない。[Operation] Foreign particles are removed by chemical reaction with ion particles or sputtering by ion particles, and only the foreign particles are irradiated with ion particles, so the circuit pattern formed on the substrate is not damaged.
【０００７】[0007]
【実施例】半導体基板を、アンモニア（ＮＨ４ＯＨ）、
過酸化水素水（Ｈ２Ｏ２）、純水の混合液中に浸漬し、
超音波を印加して洗浄を行い、基板に静電力、ファンデ
ルワールス力等により弱く付着しているだけの異物粒子
を除去した後に、図１（ａ）に示すように、レーザー２
よりのレーザー光をｘ，ｙ方向に走査させて散乱光を検
出することで、半導体基板１上の異物粒子３を検出し、
その位置（ｘ，ｙ）を記録する。記録した位置の異物粒
子３に、図１（ｂ）に示すように、異物の大きさ程度に
収束させたＡｒ＋イオンを数ＫｅＶで加速し、真空中で
照射して、異物をスパッタリングで除去する。異物粒子
の大きさは、散乱光強度から知ることができ、各異物の
大きさに合わせて、イオンビーム径を変化させながら、
検出した基板上の異物に順次Ａｒ＋イオンを照射してい
き、基板上の異物を除去することができる。各異物に対
するＡｒ＋イオン粒子の照射時間は、異物からのレーザ
ー散乱光強度を同時にモニタリングして決めることがで
きる。図１（ｂ）に於いて、４は薄膜、５はイオン銃、
６はＡｒ＋ビーム、７は散乱光、８は散乱光検出器であ
る。[Example] A semiconductor substrate is made of ammonia (NH4OH),
Immersed in a mixture of hydrogen peroxide (H2O2) and pure water,
After cleaning by applying ultrasonic waves to remove foreign particles that are only weakly attached to the substrate due to electrostatic force, van der Waals force, etc., the laser 2
The foreign particles 3 on the semiconductor substrate 1 are detected by scanning the laser beam in the x and y directions and detecting the scattered light.
Record its position (x,y). As shown in FIG. 1(b), the foreign particle 3 at the recorded position is irradiated with Ar+ ions focused to the size of the foreign particle, accelerated at several KeV, in a vacuum, and the foreign particle is removed by sputtering. . The size of foreign particles can be determined from the intensity of scattered light, and while changing the ion beam diameter according to the size of each foreign particle,
By sequentially irradiating the detected foreign matter on the substrate with Ar+ ions, the foreign matter on the substrate can be removed. The irradiation time of Ar+ ion particles to each foreign object can be determined by simultaneously monitoring the intensity of laser scattered light from the foreign object. In FIG. 1(b), 4 is a thin film, 5 is an ion gun,
6 is an Ar+ beam, 7 is a scattered light, and 8 is a scattered light detector.
【０００８】[0008]
【発明の効果】本発明の半導体基板の異物除去方法によ
って、膜の内部に一部分が埋め込まれているような、基
板に強固に付着している異物を、基板上に形成された回
路パターンにダメージを与えることなく除去することが
可能になる。[Effects of the Invention] The method for removing foreign matter from a semiconductor substrate of the present invention removes foreign matter that is firmly attached to the substrate, such as a part of the foreign matter that is partially embedded inside the film, and prevents damage to the circuit pattern formed on the substrate. It becomes possible to remove without adding.
【図１】（ａ），（ｂ）は本発明の一実施例の構成図で
ある。FIGS. 1(a) and 1(b) are configuration diagrams of an embodiment of the present invention.
１ 半導体基板 ２ レーザー ３ 異物 ４ 薄膜 ５ イオン銃 ６ Ａｒ＋ビーム ７ 散乱光 ８ 散乱光検出器 1 Semiconductor substrate 2 Laser 3 Foreign matter 4 Thin film 5 Ion gun 6 Ar+beam 7 Scattered light 8 Scattered light detector
Claims (1)
録した半導体基板上の異物に対し、集束したイオン粒子
を照射して、該異物を除去することを特徴とする、半導
体基板の異物除去方法。1. A method for removing foreign matter from a semiconductor substrate, the method comprising: removing foreign matter from a semiconductor substrate by irradiating focused ion particles to the foreign matter on the semiconductor substrate, which is detected by scattering laser light and whose position is recorded. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121891A JPH04260326A (en) | 1991-02-15 | 1991-02-15 | Foreign matter eliminating method of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121891A JPH04260326A (en) | 1991-02-15 | 1991-02-15 | Foreign matter eliminating method of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04260326A true JPH04260326A (en) | 1992-09-16 |
Family
ID=12048871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2121891A Pending JPH04260326A (en) | 1991-02-15 | 1991-02-15 | Foreign matter eliminating method of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04260326A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496506A (en) * | 1992-09-21 | 1996-03-05 | Sony Corporation | Process for removing fine particles |
| US6260562B1 (en) * | 1997-10-20 | 2001-07-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning apparatus and method |
-
1991
- 1991-02-15 JP JP2121891A patent/JPH04260326A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496506A (en) * | 1992-09-21 | 1996-03-05 | Sony Corporation | Process for removing fine particles |
| US5628954A (en) * | 1992-09-21 | 1997-05-13 | Sony Corporation | Process for detecting fine particles |
| US6260562B1 (en) * | 1997-10-20 | 2001-07-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning apparatus and method |
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