JPH04257450A - Ink-jet printer head and its manufacture - Google Patents
Ink-jet printer head and its manufactureInfo
- Publication number
- JPH04257450A JPH04257450A JP1908891A JP1908891A JPH04257450A JP H04257450 A JPH04257450 A JP H04257450A JP 1908891 A JP1908891 A JP 1908891A JP 1908891 A JP1908891 A JP 1908891A JP H04257450 A JPH04257450 A JP H04257450A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- ink
- printer head
- inkjet printer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- -1 NiCr Chemical compound 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ヒーターの加熱により
インクを沸騰させ、そのエネルギーによってノズルより
インク滴を吐出する、サーマル式インクジェットプリン
ターヘッドの構造およびその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure and manufacturing method of a thermal ink jet printer head, which boils ink by heating a heater and uses the resulting energy to eject ink droplets from a nozzle.
【０００２】0002
【従来の技術】インクジェツト記録方式には、大別して
コンティニアス方式とオンデマンド方式があり、インク
回収が不要で、装置の小型化と低価格化に適したオンデ
マンド方式が主流になりつつある。このオンデマンド方
式には、主としてサーマル式と圧電式があり、両者はイ
ンクの吐出方法で異なっている。サーマル式は発熱によ
るインクの沸騰を利用するもので、圧電式は圧電素子の
振動によるインク室の体積変化を利用するものである。[Prior Art] Inkjet recording methods can be broadly divided into continuous methods and on-demand methods.The on-demand method is becoming mainstream because it does not require ink collection and is suitable for downsizing and lowering the cost of devices. . This on-demand method mainly includes a thermal method and a piezoelectric method, and both differ in the method of ejecting ink. The thermal type uses ink boiling due to heat generation, and the piezoelectric type uses volume changes in the ink chamber due to vibration of a piezoelectric element.
【０００３】サーマル式の代表的なものは、バブルジェ
ット方式で、特公昭６１−５９９１２、特公昭６１−５
９９１３、特公昭６１−５９９１４、画像電子学会誌
第１１巻 第２号（１９８２）などに詳述されてい
る。A typical thermal type is the bubble jet method, which was developed by the Japanese Patent Publication No. 61-59912 and the Japanese Patent Publication No. 61-5.
9913, Special Publication No. 61-59914, Journal of the Institute of Image Electronics Engineers
It is detailed in Vol. 11, No. 2 (1982).
【０００４】バブルジェット方式は、単一ノズルでは応
答速度が遅いので、ノズル数を増やすことにより、プリ
ンターヘッドとしての印字速度を上げている。図６に、
従来方式のバブルジェット方式の例を示す。同図（ａ）
は、下部基板の平面図、同図（ｂ）は、上下基板の断面
図である。従来の実用上の構造は、ガラスやシリコン等
のベース基板上に、ヒーター４およびノズル隔壁１０６
を一列に配列して、多数のノズル９を高密度に一体形成
した構造となっている。Since the bubble jet method has a slow response speed with a single nozzle, the printing speed of the printer head is increased by increasing the number of nozzles. In Figure 6,
An example of a conventional bubble jet method is shown. Figure (a)
1 is a plan view of the lower substrate, and FIG. 3B is a sectional view of the upper and lower substrates. The conventional practical structure includes a heater 4 and a nozzle partition 106 on a base substrate such as glass or silicon.
It has a structure in which a large number of nozzles 9 are arranged in a line and integrally formed with a high density.
【０００５】[0005]
【発明が解決しようとする課題】ところでバブルジェッ
ト方式は、ヒーターの加熱、インクの沸騰、冷却の過程
に要する時間により応答速度が制約され、印字速度が遅
いという問題があった。また、圧電式に比較して消費電
力が大きいという問題もあった。However, the bubble jet method has a problem in that the response speed is limited by the time required for heating the heater, boiling the ink, and cooling the ink, resulting in a slow printing speed. Another problem was that the power consumption was greater than that of the piezoelectric type.
【０００６】その原因として、ヒーターが基板面等の壁
面に形成されているために、ヒーターの熱がベース基板
側等に逃げてヒーターの加熱、インクの沸騰に時間がか
かること、また、ヒーター部の熱容量が大きくなり冷却
にも時間がかかること、さらに、これらの結果消費電力
が大きくなってしまうことが考えられる。特に、基板材
料がシリコンのように熱伝導率の大きい場合には、この
影響が大きい。[0006] The reason for this is that since the heater is formed on the wall surface of the substrate, the heat of the heater escapes to the base substrate side, etc., and it takes time for the heater to heat up and the ink to boil. It is conceivable that the heat capacity of the device will increase and it will take time to cool down, and as a result, the power consumption will increase. This effect is particularly large when the substrate material has high thermal conductivity, such as silicon.
【０００７】本発明は上記のような原因を除くことによ
り、応答速度が速く消費電力が小さいサーマル式のイン
クジェツトプリンタヘッド及びその製造方法を提供する
ことを目的とする。An object of the present invention is to provide a thermal inkjet printer head with a fast response speed and low power consumption, and a method for manufacturing the same, by eliminating the above-mentioned causes.
【０００８】[0008]
【課題を解決するための手段】本発明のインクジェツト
プリンタヘッドは、ヒーターの加熱によりインクを沸騰
させ、そのエネルギーによってノズルよりインク滴を噴
射させるサーマル式のインクジェツトプリンタヘッドで
あって、壁面より浮いた位置にヒーターを備えたことを
特徴とする。[Means for Solving the Problems] The inkjet printer head of the present invention is a thermal type inkjet printer head that boils ink by heating a heater and uses the resulting energy to eject ink droplets from a nozzle. It is characterized by a heater located in a floating position.
【０００９】本発明の上記インクジェツトプリンタヘッ
ドの製造方法は、シリコン単結晶基板を用いる製造方法
であって、シリコン単結晶の結晶軸異方性エッチングを
利用することを特徴とする。The method of manufacturing the inkjet printer head of the present invention uses a silicon single crystal substrate, and is characterized by utilizing crystal axis anisotropic etching of the silicon single crystal.
【００１０】0010
【作用】本発明のインクジェツトプリンタヘッドでは、
ヒーターが壁面より浮いた位置にあるために、ヒーター
と壁面との間が熱絶縁されてヒーターの熱の壁面への逃
げが防止され、これとともにヒーター部の熱容量が小さ
くなり、従来サーマル式のインクジェツトプリンタヘッ
ドの応答速度を遅くし、消費電力を大きくしていた原因
が除かれる。[Operation] In the inkjet printer head of the present invention,
Since the heater is located above the wall surface, thermal insulation is created between the heater and the wall surface, preventing heat from escaping to the wall surface, and at the same time, the heat capacity of the heater section is reduced, making it difficult to use conventional thermal ink. Eliminates the cause of slow jet printer head response speed and high power consumption.
【００１１】本発明の製造方法によれば、シリコン単結
晶の面と方位を適当に選択し、所定形状のマスクパター
ンを用いてシリコン単結晶基板をエッチングすることに
より、エッチング速度の異方性の効果によって、自動的
にブリッジ構造、カンチレバー構造等の基板から浮き上
がった構造のヒーター部が形成される。According to the manufacturing method of the present invention, the plane and orientation of the silicon single crystal are appropriately selected and the silicon single crystal substrate is etched using a mask pattern of a predetermined shape, thereby improving the anisotropy of the etching rate. As a result of this effect, a heater section with a structure lifted from the substrate, such as a bridge structure or a cantilever structure, is automatically formed.
【００１２】0012
【実施例】以下、実施例により本発明を説明する。本実
施例は、マイクロブリッジまたはマイクロカンチレバー
構造の支持体の上に、微小なヒーターを形成することに
よって、或いは、ヒーター材料自体で、マイクロブリッ
ジ又は、マイクロカンチレバーを形成することによって
、ヒーター部をベース基板から浮上させようとするもの
である。[Examples] The present invention will be explained below with reference to Examples. In this example, the heater part is formed as a base by forming a minute heater on a support having a microbridge or microcantilever structure, or by forming a microbridge or microcantilever using the heater material itself. It is intended to be lifted off the substrate.
【００１３】実施例１
図１は本実施例のインクジェットプリンターヘッドのヒ
ーター部の構造を説明する概略構造図である。同図（ａ
）は下部基板部のみの平面図、同図（ｂ）は上下基板を
貼り合わせた後のＸーＸ′断面図である。図２は図１の
ＺーＺ′断面部でのインク液路の断面図、図３は図１の
ＹーＹ′断面部でのノズルの断面図である。尚、断面図
には切断面のみを記した。図４は、その製作工程を説明
する図である。以下、製作工程に従って本実施例のイン
クジェットプリンターヘッド及びその製造方法を説明す
る。Embodiment 1 FIG. 1 is a schematic structural diagram illustrating the structure of a heater section of an inkjet printer head according to this embodiment. The same figure (a
) is a plan view of only the lower substrate portion, and (b) is a sectional view taken along line X-X' after the upper and lower substrates are bonded together. 2 is a cross-sectional view of the ink liquid path taken along the Z--Z' cross-section in FIG. 1, and FIG. 3 is a cross-sectional view of the nozzle taken along the Y--Y' cross-section in FIG. Note that only the cut surface is shown in the sectional view. FIG. 4 is a diagram explaining the manufacturing process. The inkjet printer head of this embodiment and its manufacturing method will be described below according to the manufacturing process.
【００１４】まず、（１００）結晶面のシリコン基板１
の両面に熱酸化膜２を形成する。その上にアルミ膜を真
空蒸着又はスパッタリングにより形成する（図４（ａ）
）。電極３のパターンをフォトレジストで形成し、燐酸
系のエッチャントでエッチングした後、フォトレジスト
を除去するとアルミ膜の電極パターンができる（図１（
ａ）及び図４（ｂ））。First, a silicon substrate 1 with a (100) crystal plane is prepared.
A thermal oxide film 2 is formed on both sides of the substrate. An aluminum film is formed thereon by vacuum evaporation or sputtering (Fig. 4(a)).
). After forming the pattern of the electrode 3 with photoresist and etching with a phosphoric acid-based etchant, the photoresist is removed to form an electrode pattern of aluminum film (see Figure 1).
a) and Figure 4(b)).
【００１５】次に、白金膜を真空蒸着又はスパッタリン
グで形成し（図４（ｃ））、その上にヒーター４のパタ
ーンをフォトレジストで形成する。スパッタエッチング
により白金膜をエッチングした後、フォトレジストを除
去すると白金膜のヒーターパターンができる（図１（ａ
）及び図４（ｄ））。この際、リード線取り出し用のパ
ッド部８には、異方性エッチング時にアルミ膜を保護す
るために残したアルミ上の白金膜を残しておくとよい。Next, a platinum film is formed by vacuum evaporation or sputtering (FIG. 4(c)), and a pattern of the heater 4 is formed thereon using photoresist. After etching the platinum film by sputter etching and removing the photoresist, a heater pattern of the platinum film is created (Fig. 1(a)
) and Figure 4(d)). At this time, it is preferable to leave a platinum film on the aluminum, which was left in order to protect the aluminum film during anisotropic etching, on the pad portion 8 for taking out the lead wire.
【００１６】さらに、保護膜５として酸化シリコン膜を
真空蒸着又はスパッタリングで形成し（図４（ｅ））、
フォトレジストでノズル９、ブリッジ１０、インク液路
１１およびパッド部８のパターンを形成する。弗酸緩衝
液で酸化シリコン膜をエッチングしたのちフォトレジス
トを除去すると、酸化シリコン膜によるマスクパターン
ができる。Furthermore, a silicon oxide film is formed as a protective film 5 by vacuum evaporation or sputtering (FIG. 4(e)),
Patterns of nozzles 9, bridges 10, ink channels 11, and pad portions 8 are formed using photoresist. When the silicon oxide film is etched with a hydrofluoric acid buffer and the photoresist is removed, a mask pattern is created using the silicon oxide film.
【００１７】その後、ＫＯＨなどのアルカリエッチャン
トを用いてシリコンを異方性エッチングし、ノズル９、
ブリッジ１０およびインク液路１１を形成する（ｇ図）
。この際、ノズル９およびインク液路１１の方向はシリ
コン基板の結晶軸の＜１１０＞方向に一致させ、またブ
リッジ方向はノズル方向とは斜め方向にしておくことに
より、熱酸化膜２、ヒーター４および保護膜５よりなる
ブリッジ１０の下部のシリコンが、異方性エッチングに
より除去され、中空のブリッジが形成される。図５は異
方性エッチングによりブリッジが形成される仕組みを説
明する図である。同図（ａ）に示すように、異方性エッ
チングを用いるとマスク開口形状の最も大きい部分の形
状に合わせてエッチングが進行し、ブリッジ１０の下部
にまでエッチング領域（点線部）が広がる。これを利用
して、開口形状が一部重なるまでブリッジ１０を斜めに
して形成すると、同図（ｂ）に示すように、ブリッジ１
０下部が完全に除去される。尚、本実施例のように面方
向を選択すると（１１１）面が現われた時点でほぼエッ
チングが終了する。このように異方性エッチングによれ
ば、浮き構造をつくりやすく、また寸法精度も良くなる
。以上で下部基板が出来上がる。After that, the silicon is anisotropically etched using an alkaline etchant such as KOH, and the nozzles 9,
Forming the bridge 10 and ink liquid path 11 (Figure g)
. At this time, the directions of the nozzle 9 and the ink liquid path 11 are made to match the <110> direction of the crystal axis of the silicon substrate, and the bridge direction is made oblique to the nozzle direction, so that the thermal oxide film 2, the heater 4 The silicon below the bridge 10 made of the protective film 5 is removed by anisotropic etching, forming a hollow bridge. FIG. 5 is a diagram illustrating a mechanism in which a bridge is formed by anisotropic etching. As shown in FIG. 2A, when anisotropic etching is used, the etching progresses in accordance with the shape of the largest part of the mask opening, and the etched region (dotted line) extends to the lower part of the bridge 10. Utilizing this, if the bridge 10 is formed obliquely until the opening shapes partially overlap, the bridge 10 will be formed as shown in FIG.
0 lower part is completely removed. Note that if the plane direction is selected as in this embodiment, the etching is almost completed when the (111) plane appears. As described above, anisotropic etching makes it easy to create a floating structure and improves dimensional accuracy. With the above steps, the lower board is completed.
【００１８】一方、別の（１００）結晶面のシリコン基
板には、熱酸化膜７をマスクとして、異方性エッチング
により、ノズル９、インク液路１１およびインク導入孔
１２を形成し、これを上部基板６とする。上記のように
して加工した２枚の上下シリコン基板を、低融点ガラス
接着や静電接合の方法で貼り合わせると、インクジェッ
トプリンターヘッドが完成する。On the other hand, on another (100) crystal plane silicon substrate, a nozzle 9, an ink channel 11, and an ink introduction hole 12 are formed by anisotropic etching using the thermal oxide film 7 as a mask. This is referred to as an upper substrate 6. An inkjet printer head is completed by bonding the two upper and lower silicon substrates processed as described above using low-melting glass bonding or electrostatic bonding.
【００１９】本実施例では、熱伝導率の大きいシリコン
基板を用いてヘッドを形成したにもかかわらず、ヒータ
ーが酸化膜である２，５に支えられた浮き構造となって
いるため、基板への熱の逃げがほとんどなく、ヒーター
部の熱容量も小さくなっている。さらに、ヒーター４の
両面を有効に利用するので、ヒーター４からインクへの
熱伝達効率も良くなっている。これらの結果、本例のイ
ンクジェットプリンタヘッドは応答速度が速く、消費電
力も小さくなった。In this example, although the head is formed using a silicon substrate with high thermal conductivity, the heater has a floating structure supported by oxide films 2 and 5, so that it does not reach the substrate. There is almost no heat escape, and the heat capacity of the heater part is small. Furthermore, since both sides of the heater 4 are effectively utilized, the heat transfer efficiency from the heater 4 to the ink is improved. As a result, the inkjet printer head of this example has a fast response speed and low power consumption.
【００２０】尚、ブリッジ１０はインク液路１１のほぼ
上下方向の中央に位置するようにした。これは、ブリッ
ジ上下でのバブルの発生状態を同じにしてインクの吐出
を効率よくするためと、ブリッジ１０にかかるバブル発
生による負荷の大きさの釣り合いをとってブリッジ１０
の耐久性を増すためである。The bridge 10 is positioned approximately at the center of the ink channel 11 in the vertical direction. This is done in order to make the state of bubble generation on the upper and lower sides of the bridge the same to make ink ejection more efficient, and to balance the magnitude of the load on the bridge 10 due to bubble generation.
This is to increase the durability of.
【００２１】尚、ヒーター材料としては、上記白金の他
に、ＮｉＣｒ、Ｔａ、Ｗ等の他の金属材料、あるいは、
サーミスター材料を用いてもよい。また、（１１０）面
を用いることもできる。In addition to platinum, other metal materials such as NiCr, Ta, and W may be used as the heater material, or
A thermistor material may also be used. Furthermore, a (110) plane can also be used.
【００２２】実施例２
まず、（１１０）結晶面、Ｎ形、高抵抗のシリコン基板
の両面に、熱酸化膜を形成する。フォトレジストにより
ヒーターあるいはブリッジのパターンを形成し、弗酸緩
衝液で熱酸化膜をエッチングし、フォトレジストを除去
すると、熱酸化膜のマスクパターンが出来る。このマス
クをもとに、熱拡散またはイオン注入により、ボロンを
高濃度にドープする。（約１０２０ｃｍ−３）次に、ア
ルミ膜を真空蒸着またはスパッタリングで形成し、その
上にフォトレジストで電極のパターンを形成する。燐酸
系のエッチャントでエッチングした後、フォトレジスト
を除去するとアルミ膜の電極パターンが出来る。Example 2 First, thermal oxide films are formed on both sides of a (110) crystal plane, N type, high resistance silicon substrate. A heater or bridge pattern is formed using photoresist, the thermal oxide film is etched with a hydrofluoric acid buffer, and the photoresist is removed to form a mask pattern of the thermal oxide film. Based on this mask, boron is doped at a high concentration by thermal diffusion or ion implantation. (approximately 1020 cm-3) Next, an aluminum film is formed by vacuum evaporation or sputtering, and an electrode pattern is formed thereon using photoresist. After etching with a phosphoric acid-based etchant, the photoresist is removed to form an aluminum film electrode pattern.
【００２３】さらに、保護膜として酸化シリコン膜を真
空蒸着またはスパッタリングで形成し、フォトレジスト
でリード線取り出し用のパッドパターンを形成し、弗酸
緩衝液で酸化シリコン膜をエッチングする。このパッド
部には、異方性エッチング時にアルミ膜を保護するため
、金膜をバンプで形成しておく。Furthermore, a silicon oxide film is formed as a protective film by vacuum evaporation or sputtering, a pad pattern for lead wire extraction is formed with photoresist, and the silicon oxide film is etched with a hydrofluoric acid buffer. A gold film is formed as a bump on this pad portion in order to protect the aluminum film during anisotropic etching.
【００２４】次に、フォトレジストでノズルおよびイン
ク液路のパターンを形成し、弗酸緩衝液で酸化シリコン
膜をエッチングした後、フォトレジストを除去すると、
酸化シリコン膜のマスクパターンができる。その後、Ｋ
ＯＨなどのアルカリエッチャントでシリコンを異方性エ
ッチングし、ノズル部、ブリッジ部およびインク液路部
を形成する。この際、ノズル、インク液路およびブリッ
ジの方向については、実施例１と同様である。以上で下
部基板が出来上がる。Next, a pattern for a nozzle and an ink liquid path is formed using photoresist, and after etching the silicon oxide film using a hydrofluoric acid buffer, the photoresist is removed.
A mask pattern of silicon oxide film is created. After that, K.
Silicon is anisotropically etched using an alkaline etchant such as OH to form a nozzle portion, a bridge portion, and an ink liquid path portion. At this time, the directions of the nozzle, ink liquid path, and bridge are the same as in Example 1. With the above steps, the lower board is completed.
【００２５】一方、別の（１００）結晶面のシリコン基
板には、熱酸化膜をマスクとして、異方性エッチングに
より、ノズル、インク液路およびインク導入孔を形成し
、上部基板とする。On the other hand, on another (100) crystal plane silicon substrate, a nozzle, an ink liquid path, and an ink introduction hole are formed by anisotropic etching using a thermal oxide film as a mask, and the silicon substrate is used as an upper substrate.
【００２６】上記のようにして加工した上下２枚のシリ
コン基板を、低融点ガラス接着や静電接合の方法で貼り
合わせて、インクジェットプリンタヘッドが完成する。The two upper and lower silicon substrates processed as described above are bonded together by low melting point glass bonding or electrostatic bonding to complete an inkjet printer head.
【００２７】本実施例において、ボロンドープはボロン
のエッチングストッパーとしての作用を利用するための
ものであり、ブリッジ部にドープすることにより、ドー
プ領域のブリッジ部がエッチングされずに残ることにな
る。さらに、ボロンをドープするとこの部分の低拡が下
がるために、実施例１のようにヒーターとして白金を形
成する必要がなくドープ部分がヒーターとして働く。す
なわち、エッチングされずに残ったボロンドープシリコ
ン部がブリッジ兼ヒーターとなる。In this embodiment, boron doping is used to utilize the effect of boron as an etching stopper, and by doping the bridge portion, the bridge portion in the doped region remains unetched. Furthermore, doping with boron reduces the expansion of this portion, so there is no need to form platinum as a heater as in Example 1, and the doped portion functions as a heater. That is, the boron-doped silicon portion remaining without being etched serves as a bridge and heater.
【００２８】以上の実施例１のようにおよび２では、マ
イクロブリッジ構造について説明したが、マイクロカン
チレバー上にヒーターを設けたり、ボロンドープ層をマ
イクロカンチレバー構造にしたものも、同様に作製出来
る。In Examples 1 and 2 above, a microbridge structure has been described, but structures in which a heater is provided on a microcantilever or a boron-doped layer has a microcantilever structure can also be produced in the same manner.
【００２９】[0029]
【発明の効果】本発明のインクジェットプリンターヘッ
ドによれば、小型で高密度化が容易なサーマル式のイン
クジェットプリンターヘッドを、さらに高速応答化、低
消費電力化することができ、小型で高速印字可能、また
、電池駆動でき携帯に便利なインクジェットプリンター
を提供できる。[Effects of the Invention] According to the inkjet printer head of the present invention, a thermal inkjet printer head that is small and easy to increase density can be made even faster in response and consumes less power, allowing for small size and high-speed printing. In addition, it is possible to provide an inkjet printer that is battery-powered and convenient to carry.
【００３０】また、本発明の製造方法によれば、本発明
のインクジェットプリンターヘッドを精度良く、簡単に
製造できる。Further, according to the manufacturing method of the present invention, the inkjet printer head of the present invention can be easily manufactured with high precision.
【図１】本発明実施例１のインクジェットプリンターヘ
ッドのヒーター部の構造を説明する概略構造図である。FIG. 1 is a schematic structural diagram illustrating the structure of a heater section of an inkjet printer head according to a first embodiment of the present invention.
【図２】インク液路の断面図である。FIG. 2 is a cross-sectional view of an ink liquid path.
【図３】ノズルの断面図である。FIG. 3 is a cross-sectional view of the nozzle.
【図４】製作工程を説明する図である。FIG. 4 is a diagram illustrating the manufacturing process.
【図５】異方性エッチングによりブリッジが形成される
仕組みを説明する図である。FIG. 5 is a diagram illustrating a mechanism in which a bridge is formed by anisotropic etching.
【図６】従来のバブルジェット方式のインクジェットプ
リンターヘッドの概略構造図である。FIG. 6 is a schematic structural diagram of a conventional bubble jet type inkjet printer head.
１…下部基板 ２…熱酸化膜 ３…電極 ４…ヒーター ５…保護膜 ６…上部基板 ７…熱酸化膜 ８…パッド部 ９…ノズル １０…ブリッジ １１…インク液路 １２…インク導入孔 1...Lower board 2...Thermal oxide film 3...Electrode 4...Heater 5...Protective film 6...Top board 7...Thermal oxide film 8...Pad part 9...Nozzle 10...Bridge 11...Ink liquid path 12...Ink introduction hole
Claims (2)
せ、そのエネルギーによってノズルよりインク滴を噴射
させるサーマル式のインクジェットプリンターヘッドに
おいて、壁面より浮いた位置にヒーターを備えたことを
特徴とするインクジェットプリンターヘッド。1. A thermal inkjet printer head that boils ink by heating a heater and uses the energy to eject ink droplets from a nozzle, the inkjet printer head comprising a heater at a position floating above a wall surface. .
であって、シリコン単結晶の結晶軸異方性エッチングを
利用することを特徴とする請求項１のインクジェットプ
リンターヘッドの製造方法。2. The method of manufacturing an inkjet printer head according to claim 1, which is a manufacturing method using a silicon single crystal substrate, and the method utilizes crystal axis anisotropic etching of the silicon single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1908891A JPH04257450A (en) | 1991-02-13 | 1991-02-13 | Ink-jet printer head and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1908891A JPH04257450A (en) | 1991-02-13 | 1991-02-13 | Ink-jet printer head and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04257450A true JPH04257450A (en) | 1992-09-11 |
Family
ID=11989704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1908891A Pending JPH04257450A (en) | 1991-02-13 | 1991-02-13 | Ink-jet printer head and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04257450A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020043669A (en) * | 2000-12-02 | 2002-06-12 | 윤종용 | Both side bubble type ink-jet print head |
| EP1213146A1 (en) * | 2000-12-05 | 2002-06-12 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead |
| EP1565318A1 (en) * | 2002-11-23 | 2005-08-24 | Silverbrook Research Pty. Limited | Thermal ink jet printhead with suspended beam heater |
| EP1567351A1 (en) * | 2002-11-23 | 2005-08-31 | Silverbrook Research Pty. Limited | Thermal ink jet printhead with symmetric bubble formation |
| EP1567349A1 (en) * | 2002-11-23 | 2005-08-31 | Silverbrook Research Pty. Limited | Thermal ink jet printhead with low heater mass |
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-
1991
- 1991-02-13 JP JP1908891A patent/JPH04257450A/en active Pending
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|---|---|---|---|---|
| KR20020043669A (en) * | 2000-12-02 | 2002-06-12 | 윤종용 | Both side bubble type ink-jet print head |
| EP1213146A1 (en) * | 2000-12-05 | 2002-06-12 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead |
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