JPH04253335A - Method and device for forming insulating film - Google Patents
Method and device for forming insulating filmInfo
- Publication number
- JPH04253335A JPH04253335A JP2524191A JP2524191A JPH04253335A JP H04253335 A JPH04253335 A JP H04253335A JP 2524191 A JP2524191 A JP 2524191A JP 2524191 A JP2524191 A JP 2524191A JP H04253335 A JPH04253335 A JP H04253335A
- Authority
- JP
- Japan
- Prior art keywords
- cvd method
- film formation
- plasma cvd
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 32
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007664 blowing Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明は、ＳｉＯ２膜、ＰＳＧ
膜又はＢＰＳＧ膜などの絶縁膜の形成方法に関する。
【０００２】
【従来の技術】半導体装置の配線間の絶縁や素子の保護
及び安定化つまりパッシベーション等に寄与する絶縁膜
は、ＣＶＤ法を利用して形成するのが通例である。ＣＶ
Ｄ法には主に常圧ＣＶＤ法及びプラズマＣＶＤ法があり
、常圧ＣＶＤ法は反応ガスを熱によって分解、反応させ
て絶縁膜を形成するもので、得られる膜の平坦度は高い
が、多孔質であるため吸湿性に富む不利がある。一方プ
ラズマＣＶＤ法はプラズマを利用して反応ガスを分解、
反応させて絶縁膜を形成するもので、得られる膜は緻密
で耐水性は高いが、段差での平坦度が低い、すなわち段
差被覆性が劣る不利がある。
【０００３】
【発明が解決しようとする課題】そこでこの発明は、常
圧ＣＶＤ法及びプラズマＣＶＤ法の利点を生かすことに
よって、両者の弱点を補い合うことのできる新規な絶縁
膜の形成方法について提案することを目的とする。
【０００４】
【課題を解決するための手段】発明者らは、上記の目的
を充足し得る方途について研究したところ、常圧ＣＶＤ
法による成膜とプラズマＣＶＤ法による成膜を繰返して
積層膜とすることで、膜質が良好でかつ平坦度の高い、
特に段差被覆性に優れた絶縁膜が得られることを見出し
、この発明を完成するに到った。すなわちこの発明は、
半導体基体の表面又は金属配線上に絶縁膜を形成するに
当たり、同一反応室内において、常圧ＣＶＤ法による成
膜とプラズマＣＶＤ法による成膜とを交互にかつプラズ
マＣＶＤ法で終了する組合わせで行うことを特徴とする
絶縁膜の形成方法である。
【０００５】さて図１にこの発明に使用するＣＶＤ装置
を示す。図中１は反応室、２は上電極、３は下電極、４
は反応ガスの導入管、５は上電極２に例えばメカニカル
チャックで取付けた、半導体基体となるウェハ、６は上
電極２を介してウェハ５を加熱するヒータ、そして７は
反応室１に付帯させた収納室で、この収納室７は、図２
に示すように、下電極３を収納可能の構造になる。すな
わち反応室１内に下電極３を配置した図１の状態はプラ
ズマＣＶＤ法に適合する一方、収納室７内に下電極３を
収納した図２の状態は常圧ＣＶＤ法に適合する兼用型の
装置であり、図２の状態（以下常圧ＣＶＤ装置と示す）
では下電極３の移動後に露出する部分に反応ガスの噴射
孔８が多数現れ、図１の状態（以下プラズマＣＶＤ装置
と示す）での反応ガス経路（導入管４）とは別の経路を
構成する。また図中９は排気ダクトである。なお下電極
３は例えば図３に示すように、反応室１と収納室７との
境界中心に回転軸１０を配置したアーム１１に固定し、
このアーム１１の回動によって下電極３を反応室１から
収納室７、またその逆方向に移動し、下電極３の反応室
１に対する出入りを達成する。なお、下電極３が通過す
る、反応室１と収納室７との連通口１２にはシャッター
等を設けて気密を保つようにする。
【０００６】この発明においては、例えば上記した兼用
型のＣＶＤ装置を用いて同一反応室内でプラズマＣＶＤ
法及び常圧ＣＶＤ法を実施し、絶縁膜を積層して形成す
る。すなわち、まず図１のプラズマＣＶＤ装置にて成膜
を行い、次いで下電極３を収納室７内に移動した図２の
常圧ＣＶＤ装置にて成膜を行い、さらに下電極３を反応
室１内に戻した図１のプラズマＣＶＤ装置にて成膜を行
うことで絶縁膜を形成する。 ここで絶縁膜の形成は
、プラズマＣＶＤ装置で被成した層が表面となること、
つまりプラズマＣＶＤ法による成膜を最終工程とするこ
とが好ましい。
【０００７】
【作用】この発明に従って得られる絶縁膜は、常圧ＣＶ
Ｄ法による成膜とプラズマＣＶＤ法による成膜とを交互
に繰返し形成するため、プラズマＣＶＤ法で得られる膜
の特性すなわち緻密で耐水性に優れた性質と、常圧ＣＶ
Ｄ法で得られる膜の特性すなわち段差被覆性に優れた性
質とを併せ持たすことが可能になる。すなわちプラズマ
ＣＶＤ法で得られる膜の短所である低平坦度、特に低い
段差被覆性は、この膜を段差被覆性に優れた常圧ＣＶＤ
法による膜の上に被成すること、換言すると常圧ＣＶＤ
法による膜を絶縁膜の表面層下に少なくとも１層は形成
することで解消でき、また常圧ＣＶＤ法で得られるポー
ラスな膜をプラズマＣＶＤ法による緻密な膜で覆う、望
ましくは挟むことで吸湿を防止し、優れた特性のみを残
すわけである。また常圧ＣＶＤ法及びプラズマＣＶＤ法
による成膜を同一反応室内で行うため、常圧ＣＶＤ法か
らプラズマＣＶＤ法への移行及びこの逆の移行時にウェ
ハを一旦反応室外に取出す必要がなく、従って反応室外
でのパーティクルや水分の付着を未然に防ぐことができ
、パーティクルや水分が絶縁膜の層間に異物として残る
うれいはなく、膜質の向上に寄与し得る。さらに図１及
び図２に示したように、常圧ＣＶＤ法を実施する際には
収納室７内に下電極３を収納することによって、下電極
３が常圧ＣＶＤ雰囲気に晒されないため、下電極３へ絶
縁膜が堆積することはない。
【０００８】
【実施例】図１及び図２に示した装置を用いた下記の成
膜条件下で、ウェハの表面に、まずプラズマＣＶＤ法に
よる成膜、次いで常圧ＣＶＤ法による成膜、そして再び
プラズマＣＶＤ法による成膜をそれぞれ２０００Åの膜
厚で被成し、厚さ６０００Åの絶縁膜を形成した。
記
１．プラズマＣＶＤ条件
ウェハ温度：４００ ℃
雰囲気圧：０．３Ｔｏｒｒ
反応ガス：ＳｉＨ４ ５００ＳＣＣＭ ， Ｎ２Ｏ
１８５０ＳＣＣＭ 消費電力：０．８ ＫＷ
２．常圧ＣＶＤ条件
ウェハ温度：４００ ℃
反応ガス：ＳｉＨ４ ８００ＳＣＣＭ ， Ｏ２
５００ＳＣＣＭ 【０００９】また比較として、同様の
条件下でプラズマＣＶＤ法（比較例１）及び常圧ＣＶＤ
法（比較例２）を個別に行ってそれぞれ厚さ６０００Å
の絶縁膜を形成した。
かくして得られた３種類の絶縁膜の緻密性、耐吸湿性及
び段差被覆性（平坦度）について調べた結果を、表１に
示す。
【００１０】なお緻密性は、１０：１ＢＨＦ 液に対す
る膜のエッチングレイトにより評価した。ここでエッチ
ングレイトが大きい膜ほど緻密性は小さい。耐吸湿性は
、Ｐ．Ｃ．Ｔ（プレッシャー・クッカー・テスト）によ
り評価した。すなわち、堆積膜の下に実際にＡｌパター
ンを形成したウェハを使用し、Ｐ．Ｃ．Ｔ．条件は１２
１ ℃、１００ ％湿度、２０ｈとし、下地のＡｌの腐
食度合により膜の耐吸湿性を評価した。平坦度は、断面
ＳＥＭ観察により、図４に示す角度αの測定結果に従っ
て評価した。
【００１１】
表１ ＣＶＤ法 緻密
性 耐吸湿性 平坦性
備 考 ──────────────
──────────────────── プラズ
マ＋常圧 良（１５００ Å／ｍｉｎ） 良（腐
食なし） 良（６０ ゜） 適合例 プラズマ
良（１２００ Å／ｍｉｎ） 良
（腐食なし） 悪（９０ ゜） 比較例 常圧
悪（２０００ Å／ｍｉｎ）
悪（腐食あり） 良（６０ ゜） 比較例
───────────────────────
───────────【００１２】
【発明の効果】この発明によれば、緻密で耐水性に優れ
かつ段差被覆性にも優れた絶縁膜、すなわち半導体装置
に不可欠の良好な膜質の絶縁膜を容易に得ることができ
る。Detailed Description of the Invention [0001] [Industrial Application Field] This invention is directed to SiO2 film, PSG
The present invention relates to a method of forming an insulating film such as a film or a BPSG film. 2. Description of the Related Art Insulating films that contribute to insulation between interconnections of semiconductor devices, protection and stabilization of elements, that is, passivation, etc., are usually formed using the CVD method. CV
The D method mainly includes the atmospheric pressure CVD method and the plasma CVD method. The atmospheric pressure CVD method forms an insulating film by decomposing and reacting a reactive gas with heat, and the resulting film has a high degree of flatness. Since it is porous, it has the disadvantage of being highly hygroscopic. On the other hand, the plasma CVD method uses plasma to decompose reactive gases.
An insulating film is formed by reaction, and the resulting film is dense and highly water resistant, but has the disadvantage of low flatness at steps, that is, poor step coverage. [Problems to be Solved by the Invention] Therefore, the present invention proposes a new method for forming an insulating film that can compensate for the weaknesses of both atmospheric CVD and plasma CVD by taking advantage of the advantages of both methods. The purpose is to [Means for Solving the Problems] The inventors researched ways to satisfy the above objectives and found that atmospheric pressure CVD
By repeating film formation by method and plasma CVD method to form a laminated film, it has good film quality and high flatness.
It was discovered that an insulating film particularly excellent in step coverage can be obtained, and the present invention was completed. In other words, this invention
When forming an insulating film on the surface of a semiconductor substrate or metal wiring, film formation by normal pressure CVD method and film formation by plasma CVD method are performed alternately in the same reaction chamber, and a combination of film formation ending with plasma CVD method is performed. This is a method for forming an insulating film characterized by the following. FIG. 1 shows a CVD apparatus used in the present invention. In the figure, 1 is the reaction chamber, 2 is the upper electrode, 3 is the lower electrode, and 4
5 is a wafer serving as a semiconductor substrate attached to the upper electrode 2 with a mechanical chuck, 6 is a heater for heating the wafer 5 via the upper electrode 2, and 7 is attached to the reaction chamber 1. This storage room 7 is shown in Figure 2.
As shown in the figure, the structure is such that the lower electrode 3 can be housed therein. In other words, the state shown in FIG. 1 in which the lower electrode 3 is placed in the reaction chamber 1 is compatible with the plasma CVD method, while the state shown in FIG. 2 in which the lower electrode 3 is stored in the storage chamber 7 is compatible with the normal pressure CVD method. This is the device in the state shown in Figure 2 (hereinafter referred to as normal pressure CVD device).
In this case, a large number of reaction gas injection holes 8 appear in the exposed portion after the lower electrode 3 is moved, forming a path different from the reaction gas path (introduction pipe 4) in the state of FIG. 1 (hereinafter referred to as plasma CVD apparatus). do. Further, 9 in the figure is an exhaust duct. Note that the lower electrode 3 is fixed to an arm 11 having a rotating shaft 10 located at the center of the boundary between the reaction chamber 1 and the storage chamber 7, as shown in FIG. 3, for example.
This rotation of the arm 11 moves the lower electrode 3 from the reaction chamber 1 to the storage chamber 7 and vice versa, thereby achieving movement of the lower electrode 3 into and out of the reaction chamber 1. Note that a shutter or the like is provided at the communication port 12 between the reaction chamber 1 and the storage chamber 7, through which the lower electrode 3 passes, to maintain airtightness. In the present invention, plasma CVD is performed in the same reaction chamber using, for example, the above-mentioned dual-purpose CVD apparatus.
The insulating films are laminated and formed using the atmospheric pressure CVD method and the atmospheric pressure CVD method. That is, the film is first formed using the plasma CVD apparatus shown in FIG. 1, then the film is formed using the atmospheric pressure CVD apparatus shown in FIG. An insulating film is formed by forming a film using the plasma CVD apparatus shown in FIG. 1 which has been returned to the inside. Here, the formation of the insulating film is such that the layer formed by the plasma CVD device becomes the surface;
In other words, it is preferable that film formation by the plasma CVD method be the final step. [Operation] The insulating film obtained according to the present invention can be
Because the film formation by the D method and the film formation by the plasma CVD method are repeated alternately, the characteristics of the film obtained by the plasma CVD method, that is, the dense and excellent water resistance, and the atmospheric pressure CV
It becomes possible to have the characteristics of the film obtained by method D, that is, the excellent step coverage. In other words, the disadvantages of the film obtained by the plasma CVD method, such as low flatness and especially poor step coverage, can be overcome by atmospheric pressure CVD, which has excellent step coverage.
in other words, by atmospheric pressure CVD.
This problem can be solved by forming at least one layer of a film obtained by the normal pressure CVD method under the surface layer of the insulating film.Moisture absorption can be avoided by covering the porous film obtained by the normal pressure CVD method with a dense film obtained by the plasma CVD method, preferably by sandwiching it. This prevents this and leaves only the excellent properties. Furthermore, since film formation by atmospheric pressure CVD and plasma CVD is performed in the same reaction chamber, there is no need to temporarily take out the wafer from the reaction chamber when transitioning from atmospheric CVD to plasma CVD and vice versa. It is possible to prevent particles and moisture from adhering outdoors, and there is no possibility that particles or moisture will remain as foreign matter between the layers of the insulating film, which can contribute to improving the film quality. Furthermore, as shown in FIGS. 1 and 2, when carrying out the atmospheric pressure CVD method, by storing the lower electrode 3 in the storage chamber 7, the lower electrode 3 is not exposed to the atmospheric pressure CVD atmosphere. No insulating film is deposited on the electrode 3. [Example] Under the following film formation conditions using the apparatus shown in FIGS. 1 and 2, a film was first formed on the surface of a wafer by a plasma CVD method, then a film was formed by an atmospheric pressure CVD method, and The plasma CVD method was again used to form a film with a thickness of 2000 Å, thereby forming an insulating film with a thickness of 6000 Å. Note 1. Plasma CVD conditions Wafer temperature: 400°C Atmospheric pressure: 0.3 Torr Reaction gas: SiH4 500SCCM, N2O
1850SCCM Power consumption: 0.8 KW 2. Atmospheric pressure CVD conditions Wafer temperature: 400 ℃ Reaction gas: SiH4 800SCCM, O2
500SCCM [0009] Also, for comparison, plasma CVD method (comparative example 1) and atmospheric pressure CVD method were performed under similar conditions.
(Comparative Example 2) was applied individually to a thickness of 6000 Å.
An insulating film was formed. Table 1 shows the results of examining the denseness, moisture absorption resistance, and step coverage (flatness) of the three types of insulating films thus obtained. [0010] The density was evaluated by the etching rate of the film with respect to a 10:1 BHF solution. Here, the higher the etching rate of the film, the lower the density. Moisture absorption resistance is P. C. Evaluated by T (pressure cooker test). That is, a wafer on which an Al pattern is actually formed under the deposited film is used, and P. C. T. The conditions are 12
The moisture absorption resistance of the film was evaluated based on the degree of corrosion of the underlying Al at 1° C. and 100% humidity for 20 hours. The flatness was evaluated by cross-sectional SEM observation according to the measurement results of the angle α shown in FIG. [0011]
Table 1 CVD method Density Moisture absorption resistance Flatness
Notes ──────────────
──────────────────── Plasma + normal pressure Good (1500 Å/min) Good (no corrosion) Good (60°) Compatibility example Plasma Good (1200 Å/min ) Good (no corrosion) Bad (90°) Comparative example Normal pressure Bad (2000 Å/min)
Bad (with corrosion) Good (60°) Comparative example ────────────────────────
──────────── [Effects of the Invention] According to the present invention, an insulating film that is dense, has excellent water resistance, and has excellent step coverage, that is, a good insulating film that is essential for semiconductor devices. A high-quality insulating film can be easily obtained.
【図１】この発明に使用するＣＶＤ装置の模式図である
。FIG. 1 is a schematic diagram of a CVD apparatus used in the present invention.
【図２】この発明に使用するＣＶＤ装置の模式図である
。FIG. 2 is a schematic diagram of a CVD apparatus used in the present invention.
【図３】下電極の移動機構を示す模式図である。FIG. 3 is a schematic diagram showing a movement mechanism of the lower electrode.
【図４】膜の平坦度試験を説明する模式図である。FIG. 4 is a schematic diagram illustrating a film flatness test.
１ 反応室 ２ 上電極 ３ 下電極 ４ 導入管 ５ ウェハ ６ ヒータ ７ 収納室 ８ 噴射孔 ９ 排気ダクト １０ 回転軸 １１ アーム １２ 連通口 1 Reaction chamber 2 Upper electrode 3 Lower electrode 4 Introductory pipe 5 Wafer 6 Heater 7 Storage room 8 Injection hole 9 Exhaust duct 10 Rotation axis 11 Arm 12 Communication port
Claims (3)
縁膜を形成するに当たり、同一反応室内において、常圧
ＣＶＤ法による成膜とプラズマＣＶＤ法による成膜とを
交互に組合わせて行うことを特徴とする絶縁膜の形成方
法。Claim 1: When forming an insulating film on the surface of a semiconductor substrate or on metal wiring, film formation by atmospheric pressure CVD method and film formation by plasma CVD method are alternately performed in the same reaction chamber. Characteristic insulating film formation method.
ＶＤ法による成膜とを交互に組合わせて行う絶縁膜の形
成において、プラズマＣＶＤ法により成膜を終了させる
請求項１に記載の絶縁膜の成形方法。[Claim 2] Film formation by atmospheric pressure CVD method and plasma C
2. The method of forming an insulating film according to claim 1, wherein in forming the insulating film by alternately combining film formation with a VD method, the film formation is completed by a plasma CVD method.
、この上電極に対応する下電極及び反応ガスの導入管を
配置した、絶縁膜の形成装置であって、下電極は反応室
に対し出入り可能になる絶縁膜の形成装置。3. An insulating film forming apparatus comprising, in a reaction chamber, an upper electrode for fixing a wafer, a lower electrode corresponding to the upper electrode, and a reaction gas introduction tube, the lower electrode being connected to the reaction chamber. A device for forming an insulating film that can be moved in and out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2524191A JPH04253335A (en) | 1991-01-28 | 1991-01-28 | Method and device for forming insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2524191A JPH04253335A (en) | 1991-01-28 | 1991-01-28 | Method and device for forming insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04253335A true JPH04253335A (en) | 1992-09-09 |
Family
ID=12160489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2524191A Pending JPH04253335A (en) | 1991-01-28 | 1991-01-28 | Method and device for forming insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04253335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260281A (en) * | 2008-03-28 | 2009-11-05 | Mitsubishi Electric Corp | Method and apparatus for forming thin film, and thin film semiconductor device produced by using the same |
-
1991
- 1991-01-28 JP JP2524191A patent/JPH04253335A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260281A (en) * | 2008-03-28 | 2009-11-05 | Mitsubishi Electric Corp | Method and apparatus for forming thin film, and thin film semiconductor device produced by using the same |
| JP4573902B2 (en) * | 2008-03-28 | 2010-11-04 | 三菱電機株式会社 | Thin film formation method |
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